WO2014027566A1 - Procédé de prévention d'oxydation et procédé de production d'un produit semiconducteur - Google Patents

Procédé de prévention d'oxydation et procédé de production d'un produit semiconducteur Download PDF

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Publication number
WO2014027566A1
WO2014027566A1 PCT/JP2013/070676 JP2013070676W WO2014027566A1 WO 2014027566 A1 WO2014027566 A1 WO 2014027566A1 JP 2013070676 W JP2013070676 W JP 2013070676W WO 2014027566 A1 WO2014027566 A1 WO 2014027566A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound
corrosion inhibitor
metal corrosion
organic amine
preventing oxidation
Prior art date
Application number
PCT/JP2013/070676
Other languages
English (en)
Inventor
Atsushi Mizutani
Kee Young Park
Tetsuya Shimizu
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to KR20157002537A priority Critical patent/KR20150023916A/ko
Publication of WO2014027566A1 publication Critical patent/WO2014027566A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H01L2224/0382—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Abstract

La présente invention concerne un procédé de prévention de l'oxydation d'une surface en cuivre ou en alliage de cuivre destiné à être utilisé comme matériau électronique, le procédé comprenant les étapes consistant à : fournir un inhibiteur de corrosion de métal comprenant un composé hétéroaromatique contenant de l'azote et un composé amine organique, le composé amine organique ayant une partie hydrocarbure et une partie amine, à condition que le composé amine organique ne soit pas une alcanolamine; et appliquer l'inhibiteur de corrosion de métal sur la surface de cuivre ou d'alliage de cuivre.
PCT/JP2013/070676 2012-08-17 2013-07-24 Procédé de prévention d'oxydation et procédé de production d'un produit semiconducteur WO2014027566A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR20157002537A KR20150023916A (ko) 2012-08-17 2013-07-24 산화방지방법 및 반도체 제품의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-181095 2012-08-17
JP2012181095A JP2014037585A (ja) 2012-08-17 2012-08-17 酸化防止処理方法、これを用いた半導体製品の製造方法

Publications (1)

Publication Number Publication Date
WO2014027566A1 true WO2014027566A1 (fr) 2014-02-20

Family

ID=50101295

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/070676 WO2014027566A1 (fr) 2012-08-17 2013-07-24 Procédé de prévention d'oxydation et procédé de production d'un produit semiconducteur

Country Status (4)

Country Link
JP (1) JP2014037585A (fr)
KR (1) KR20150023916A (fr)
TW (1) TWI586839B (fr)
WO (1) WO2014027566A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018234032A1 (fr) 2017-06-22 2018-12-27 Doduco Solutions Gmbh Couche d'inhibiteur de corrosion pour des surfaces en cuivre sur des substrats à microcâblage ainsi que procédé pour protéger des surfaces en cuivre destinées au soudage de fils par celle-ci

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6390273B2 (ja) * 2014-08-29 2018-09-19 新日鐵住金株式会社 熱延鋼板の製造方法
JP6485605B1 (ja) * 2017-09-27 2019-03-20 栗田工業株式会社 銅系材料の腐食抑制方法
WO2019065415A1 (fr) * 2017-09-27 2019-04-04 栗田工業株式会社 Procédé d'élimination de corrosion pour matériau à base de cuivre

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271961A (ja) * 1987-04-28 1988-11-09 Nippon Mining Co Ltd リ−ドフレ−ム
JPH08274242A (ja) * 1995-03-29 1996-10-18 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2012031501A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 金属膜表面の酸化防止方法及び酸化防止液

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3865440B2 (ja) * 1996-10-11 2007-01-10 城北化学工業株式会社 銅および銅合金用腐食抑制剤
US8586481B2 (en) * 2010-06-01 2013-11-19 Applied Materials, Inc. Chemical planarization of copper wafer polishing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271961A (ja) * 1987-04-28 1988-11-09 Nippon Mining Co Ltd リ−ドフレ−ム
JPH08274242A (ja) * 1995-03-29 1996-10-18 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2012031501A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 金属膜表面の酸化防止方法及び酸化防止液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018234032A1 (fr) 2017-06-22 2018-12-27 Doduco Solutions Gmbh Couche d'inhibiteur de corrosion pour des surfaces en cuivre sur des substrats à microcâblage ainsi que procédé pour protéger des surfaces en cuivre destinées au soudage de fils par celle-ci
DE102017113871A1 (de) * 2017-06-22 2018-12-27 Doduco Solutions Gmbh Bondsubstrat sowie Verfahren zum Schützen von zum Drahtbonden vorgesehenen Oberflächen
CN110914472A (zh) * 2017-06-22 2020-03-24 多杜科解决方案有限公司 键合基板和保护用于引线键合的表面的方法

Also Published As

Publication number Publication date
TW201410919A (zh) 2014-03-16
JP2014037585A (ja) 2014-02-27
KR20150023916A (ko) 2015-03-05
TWI586839B (zh) 2017-06-11

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