WO2014015582A1 - 传感器的制造方法 - Google Patents
传感器的制造方法 Download PDFInfo
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- WO2014015582A1 WO2014015582A1 PCT/CN2012/084771 CN2012084771W WO2014015582A1 WO 2014015582 A1 WO2014015582 A1 WO 2014015582A1 CN 2012084771 W CN2012084771 W CN 2012084771W WO 2014015582 A1 WO2014015582 A1 WO 2014015582A1
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- pattern
- electrode
- photoresist
- patterning process
- photodiode
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000059 patterning Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000002591 computed tomography Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QNTVPKHKFIYODU-UHFFFAOYSA-N aluminum niobium Chemical compound [Al].[Nb] QNTVPKHKFIYODU-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Definitions
- Embodiments of the present invention relate to a method of fabricating a sensor. Background technique
- CT computed tomography
- the basic structure of an X-ray sensor is as shown in FIG. 1.
- the X-ray sensor 12 includes a plurality of scan lines 15, a plurality of data lines 16, and a plurality of sensing units, each of which includes a photodiode 13 and a Field Effect Transistor (FET) 14.
- FET Field Effect Transistor
- the gate of the field effect transistor 14 is connected to a corresponding scan line 15 of the X-ray sensor 12, and the drain of the field effect transistor 14 and the data of the X-ray sensor 12.
- a data line 16 is connected, and a photodiode 13 is connected to the source of the field effect transistor 14.
- One end of these data lines 16 is connected to the data readout circuit 18 via a connection pin 17.
- the above X-ray sensor operates on the principle that the X-ray sensor 12 applies a drive scan signal through the scan line 15 to control the switching state of the field effect transistor 14 of each of the sensing units.
- the photocurrent signal generated by the photodiode 13 is sequentially output through the data line 16 connected to the field effect transistor 14 and the data readout circuit 18, by controlling the timing of the signal on the scan line 15 and the data line 16.
- the collecting function of the photocurrent signal is realized, that is, the control effect of the photocurrent signal generation generated by the photodiode 13 is realized by controlling the switching state of the FET 14.
- each sensing unit includes: a substrate, a gate layer, a gate insulating layer, an active layer, a source and a drain layer, a passivation layer, a PIN junction of a PIN photosensor, and a transparent electrode window layer, and a bias voltage Line layer and light barrier layer.
- TFT Thin Film Transistor
- the individual layers of the X-ray sensor are typically formed by a patterning process, and each patterning process typically includes steps such as masking, exposure, development, etching, and removal. That is, in order to implement the sensor Multiple layers require multiple patterning processes.
- the above-described X-ray sensor having a plurality of layers usually requires 9 to 11 patterning processes at the time of manufacture, so that 9 to 11 mask masks are required correspondingly, thereby making the manufacturing cost of the X-ray sensor higher.
- the manufacturing process is more complicated and the production capacity is more difficult to upgrade. Summary of the invention
- a method of manufacturing a sensor comprising:
- a source and a drain on the base substrate by a first patterning process, a pattern of data lines connected to the drain, and a pattern of receiving electrodes connected to the source, located at the receiving electrode a pattern of the photodiode thereon, and a pattern of transparent electrodes on the photodiode; wherein the source and the drain are opposite to each other to form a channel;
- the thin film transistor device of the sensor manufactured by the manufacturing method according to the embodiment of the present invention is of a top gate type, and the sensor can be fabricated by a lesser number of patterning processes, and therefore, the manufacturing method of the embodiment of the present invention is compared with the prior art. It reduces the number of reticle used, reduces manufacturing costs, simplifies the production process, and greatly increases equipment productivity and product yield.
- FIG. 1 is a schematic perspective view of a conventional sensor
- FIG. 2 is a plan view of one of the sensing units of the sensor manufactured by the manufacturing method according to an embodiment of the present invention
- 3a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along line A-A of FIG. 2 after the first patterning process;
- 3b is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the first patterning process according to an embodiment of the present invention
- 4a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line A-A of FIG. 2 after the second patterning process;
- 4b is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the second patterning process according to an embodiment of the present invention
- 5a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line A-A of FIG. 2 after the third patterning process;
- 5b is a cross-sectional view of the sensing unit taken along line B-B of FIG. 2 after the third patterning process according to an embodiment of the present invention
- 6a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line A-A of FIG. 2 after the fourth patterning process;
- 6b is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the fourth patterning process according to an embodiment of the present invention
- 7a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line A-A of FIG. 2 after the fifth patterning process;
- 7b is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the fifth patterning process according to an embodiment of the present invention
- Figure 8a is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line A-A of Figure 2 after the sixth patterning process;
- Figure 8b is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of Figure 2 after the sixth patterning process.
- the senor may be an X-ray sensor or other type of sensor, such as a sensor that transmits by photoelectric conversion.
- a sensor that transmits by photoelectric conversion may be formed identically.
- the embodiment of the present invention provides a method for manufacturing a sensor, which includes: a manufacturing method with a high manufacturing cost and a complicated manufacturing process in the existing sensor, including:
- Step 101 forming a pattern of the source 33 and the drain 34 by a patterning process on the base substrate 32, a pattern of the data line 31 connected to the drain 34, and a pattern of the receiving electrode 39 connected to the source 33 are located at the receiving A pattern of the photodiode 40 above the electrode 39, and a pattern of the transparent electrode 41 over the photodiode 40; wherein the source 33 and the drain 34 are opposed to each other to form a channel.
- 3a and 3b are cross-sectional views of the substrate after the first patterning process.
- 2, 8a, and 8b are top and cross-sectional views of the sensing unit obtained after the final six processes. Therefore, the substrate of FIGS. 3a and 3b is only cut along the line AA, line and BB shown in FIG. 2, and the direction of the line is not cut, which does not represent a cross-sectional view of the substrate of FIG. 2.
- Figures 4a to 7b are also shown in the same manner.
- the one-time patterning process generally includes steps of substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist removal, and the like.
- Substrate cleaning includes cleaning with deionized water, organic cleaning solution, and the like.
- the film forming process is used to form a structural layer to be patterned. For example, for a metal layer, a film is formed by physical vapor deposition (for example, magnetron sputtering), and a pattern is formed by wet etching.
- a non-metal layer a film is formed by chemical vapor deposition, and dried. Etching forms a pattern.
- the composition process in the following steps is the same as this, and will not be described again.
- the above step 101 may include the following steps: 101a. sequentially depositing a data line material layer, a photodiode material layer, and a transparent conductive material layer on the base substrate 32, and transparently conducting Coating a photoresist on the material layer;
- a positive photoresist is taken as an example.
- the completely transparent region, the semi-transmissive region and the opaque region of the mask are used for performing full exposure, partial exposure and non-exposure operations on the photoresist, after development.
- a photoresist complete removal region, a photoresist partial removal region, and a photoresist complete retention region are obtained.
- the photoresist is substantially completely retained in the photoresist complete retention area.
- depositing a photodiode material layer on the data line material layer may specifically include sequentially depositing on the data line material layer: n-type semiconductor layer (n+a -Si), I-type semiconductor layer (a-Si) and P-type semiconductor layer (p+a-Si) More specifically, an N-type semiconductor is deposited over the data line material layer, in which the N-type semiconductor An I-type semiconductor is deposited thereon, and a P-type semiconductor is deposited over the I-type semiconductor.
- the opaque region of the mask corresponds to a region where the receiving electrode 39, the PIN photodiode 40, and the transparent electrode 41 are formed; the semi-transmissive region of the mask corresponds to the source 33, the drain 34, and the data line 31.
- the reticle may be a two-tone mask (e.g., a gray tone or halftone mask, etc.).
- the pattern of the transparent electrode 41 may be formed by wet etching, or the pattern of the transparent electrode 41 and the pattern of the photodiode 40 may be simultaneously formed by dry etching.
- the source 33, the drain 34, the data line 31, and the receiving electrode 39 are made of the same material.
- Step 102 forming an ohmic layer over the source 33 and the drain 34 by one patterning process
- Step 103 forming a pattern of the active layer 36 over the ohmic layer 35 and covering the trench by a patterning process.
- the cross-sectional structure after the third patterning process is shown in Figures 5a and 5b.
- Step 104 Form a pattern of the gate insulating layer 37 by a patterning process, and the gate insulating layer 37 has a through hole above the transparent electrode 41. Refer to Figure 6a and Figure 6b for the cross-sectional structure after the fourth patterning process.
- Step 105 forming a pattern of the gate electrode 38 over the gate insulating layer 37 and above the channel by a patterning process, a pattern of the gate line 30 connected to the gate electrode 38, and passing through the via hole over the transparent electrode 41.
- the cross-sectional structure after the fifth patterning process is shown in Figures 7a and 7b.
- the gate 38, the gate line 30, and the bias line 42 are made of the same material.
- the method of the embodiment may further include:
- Step 106 forming a pattern of the passivation layer 44 covering the substrate by one patterning process, the passivation layer 44 has signal guiding area via holes; and the cross-sectional structure after the sixth patterning process is shown in FIG. 8a and FIG. 8b.
- step 106 is optional because the purpose of the present invention can be achieved without performing step 106.
- the method for fabricating a sensor may include only steps 101-105 described above.
- the method for manufacturing the sensor of the embodiment of the present invention can use five or six patterning processes in total, which reduces the number of masks used and reduces manufacturing compared with the prior art.
- the cost simplifies the production process and greatly increases the equipment capacity and product yield.
- Fig. 2 shows a plan view of one of the sensing units of the sensor manufactured in accordance with the method of the above-described embodiment of the present invention.
- Figures 8a and 8b are cross-sectional views of the sensing unit of Figure 2 taken along line A-A, line and B-B.
- the sensor includes: a base substrate 32, a set of gate lines 30 and a set of data lines 31 arranged in a crosswise manner, and a plurality of senses arranged in an array defined by the set of gate lines 30 and a set of data lines 31.
- Each of the sensing units includes a thin film transistor device and a photodiode sensor device, wherein the thin film transistor device includes: a source 33 and a drain 34 opposite to each other to form a channel, and a source 33 and a drain 34 An ohmic layer 35 thereon, an active layer 36 over the ohmic layer 35 and covering the channel, a gate insulating layer 37 over the active layer 36, and a gate insulating layer 37 over the channel and a gate 38 connected to the adjacent gate line 30, wherein the drain 34 is connected to the adjacent data line 31;
- the photodiode sensor device includes: a receiving electrode 39 connected to the source 33, a photodiode 40 above the receiving electrode 39, a transparent electrode 41 above the photodiode 40, and a transparent electrode above the transparent electrode 41. 41 connected bias line 42, wherein the bias line 42 is disposed parallel to the gate line 30.
- the base substrate 32 may be a substrate of a glass substrate, a plastic substrate or other materials; the gate line 30, the gate 38, the data line 31, the source 33, the drain 34, and the receiving
- the material of the electrode 39 and the bias line 42 may be the same, and may be, for example, an aluminum-niobium alloy (AlNd), aluminum (A1), copper (Cu), molybdenum (Mo), molybdenum-tungsten alloy (MoW) or chromium (Cr).
- the single layer film may also be a composite film composed of any combination of these metal elements or alloy materials. The thickness of these single or composite films is, for example, between 150 nm and 450 nm.
- the material of the ohmic layer 35 may be, for example, a doped semiconductor (n+a-Si); the material of the active layer 36 may be a semiconductor material, such as amorphous silicon (a-Si), thickness, for example.
- the material of the gate insulating layer 37 may be silicon nitride, and the thickness is, for example, between 300 nm and 500 nm; the material of the transparent electrode 41 may be, for example, indium tin oxide (ITO) or indium oxide.
- ITO indium tin oxide
- a transparent conductive material such as IZO.
- the photodiode 40 may be a PIN type photodiode, including: an N-type semiconductor (n+a-Si) 40a located above the receiving electrode 39, and an I-type semiconductor located above the N-type semiconductor 40a. (a-Si) 40b and a P-type semiconductor (p+a-Si) 40c over the I-type semiconductor 40b.
- PIN type photodiode due to its small junction capacitance, short transit time, and high sensitivity It is preferred.
- the photodiode may also employ other types of photodiodes such as MIS type photodiodes.
- the gate insulating layer 37 covers the entire area of the substrate, and has a via hole connecting the transparent electrode 41 and the bias line 42 above the transparent electrode 41.
- the sensor may further include a passivation layer 44 over the bias line 42, the gate line 30, and the gate 38 and covering the substrate (ie, covering the entire area of the substrate), the passivation layer 44 having a signal
- the lead-through vias (Figs. 8a and 8b are cross-sectional structures of one sensing unit, so the signal guiding region vias at the periphery of the substrate are not shown in the figure).
- the passivation layer 44 may be an inorganic insulating film (e.g., silicon nitride or the like) or an organic insulating film (e.g., a photosensitive resin material or a non-photosensitive resin material, etc.) having a thickness of, for example, 150 nm to 1500 nm.
- an inorganic insulating film e.g., silicon nitride or the like
- an organic insulating film e.g., a photosensitive resin material or a non-photosensitive resin material, etc.
- the gate can effectively function as a shield, thereby preventing the channel from being damaged by etching.
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020137035113A KR101543946B1 (ko) | 2012-07-26 | 2012-11-16 | 센서를 제조하기 위한 방법 |
EP12881533.9A EP2879161B1 (en) | 2012-07-26 | 2012-11-16 | Method for manufacturing sensor |
JP2015523365A JP6053928B2 (ja) | 2012-07-26 | 2012-11-16 | センサーの製造方法 |
US14/127,353 US9048161B2 (en) | 2012-07-26 | 2012-11-16 | Method for fabricating sensor |
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CN201210262962.5 | 2012-07-26 | ||
CN201210262962.5A CN102800750B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器的制造方法 |
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US (1) | US9048161B2 (zh) |
EP (1) | EP2879161B1 (zh) |
JP (1) | JP6053928B2 (zh) |
KR (1) | KR101543946B1 (zh) |
CN (1) | CN102800750B (zh) |
WO (1) | WO2014015582A1 (zh) |
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CN102790064B (zh) * | 2012-07-26 | 2015-04-08 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
US11404588B2 (en) * | 2019-12-11 | 2022-08-02 | Sharp Kabushiki Kaisha | Imaging panel |
Citations (3)
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CN101494256A (zh) * | 2009-02-26 | 2009-07-29 | 友达光电股份有限公司 | X射线感测器及其制作方法 |
WO2012082276A2 (en) * | 2010-12-15 | 2012-06-21 | Carestream Health, Inc. | High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same |
CN102629610A (zh) * | 2012-03-27 | 2012-08-08 | 北京京东方光电科技有限公司 | 一种x射线检测装置的阵列基板及其制造方法 |
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- 2012-11-16 WO PCT/CN2012/084771 patent/WO2014015582A1/zh active Application Filing
- 2012-11-16 JP JP2015523365A patent/JP6053928B2/ja not_active Expired - Fee Related
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KR101543946B1 (ko) | 2015-08-11 |
US9048161B2 (en) | 2015-06-02 |
CN102800750A (zh) | 2012-11-28 |
KR20140068813A (ko) | 2014-06-09 |
EP2879161A1 (en) | 2015-06-03 |
JP2015531164A (ja) | 2015-10-29 |
CN102800750B (zh) | 2015-07-01 |
EP2879161B1 (en) | 2017-11-08 |
US20140335641A1 (en) | 2014-11-13 |
JP6053928B2 (ja) | 2016-12-27 |
EP2879161A4 (en) | 2016-03-16 |
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