JP2015531164A - センサーの製造方法 - Google Patents
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- 239000002356 single layer Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
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- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
13 フォトダイオード
14 電界効果トランジスタ
15 走査線
16 データ線
17 接続ピン
18 データ読取回路
30 ゲート線
31 データ線
32 ベース基板
33 ソース電極
34 ドレイン電極
35 オーミック層
36 活性層
37 ゲート絶縁層
38 ゲート電極
44 パッシベーション層
40 フォトダイオード
41 透明電極
39 受信電極
40a N型半導体
40b I型半導体
40c P型半導体
42 バイアス線
Claims (9)
- ベース基板に、第一回のパターニング工程によって、ソース電極及びドレイン電極のパターンと、前記ドレイン電極と接続するデータ線のパターンと、前記ソース電極と接続する受信電極のパターンと、前記受信電極の上にあるフォトダイオードのパターンと、前記フォトダイオードの上にある透明電極のパターンと、を形成し、前記ソース電極及び前記ドレイン電極が対向して配されるチャネルを形成するステップと、
第二回のパターニング工程によって前記ソース電極及び前記ドレイン電極の上にあるオーミック層を形成するステップと、
第三回のパターニング工程によって前記オーミック層の上に位置し、かつ前記チャネルを覆う活性層を形成するステップと、
第四回のパターニング工程によって前記透明電極の上方に貫通孔を備えるゲート絶縁層のパターンを形成するステップと、
第五回のパターニング工程によって前記ゲート絶縁層の上に位置し、かつ前記チャネルの上方にあるゲート電極のパターンと、前記ゲート電極と接続するゲート線のパターンと、前記透明電極の上方で前記貫通孔を介して前記透明電極と接続するバイアス線のパターンと、を形成するステップと、
を備えることを特徴とするセンサーの製造方法。 - 前記第五回のパターニング工程によって前記ゲート電極のパターンと、前記ゲート線のパターンと、前記バイアス線のパターンと形成するステップの後に、
第六回のパターニングによって前記ベース基板を覆う、信号ガイド領域のビアホールを備えるパッシベーション層のパターンを形成するステップを、
更に備えることを特徴とする、請求項1に記載のセンサーの製造方法。 - 前記第一回のパターニング工程によって前記ソース電極及び前記ドレイン電極のパターンと、前記データ線のパターンと、前記受信電極のパターンと、前記フォトダイオードのパターンと、前記透明電極のパターンと、を形成するステップは、
前記ベース基板に順に、データ線材料層と、フォトダイオード材料層と、透明導電材料層と、を堆積し、前記透明導電材料層の上にフォトレジストを塗布するステップと、
全透過領域、半透過領域及び不透過領域を備えるマスクで前記ベース基板にあるフォトレジストを露光・現像することによって、フォトレジスト完全除去領域、フォトレジスト一部除去領域及びフォトレジスト完全残留領域を備えるフォトレジストパターンを得るステップと、
前記ベース基板における前記フォトレジスト完全除去領域をエッチングし、前記透明電極のパターンと、前記フォトダイオードのパターンと、前記受信電極のパターンと、を形成するステップと、
前記ベース基板における前記フォトレジスト一部除去領域をアッシングし、前記フォトレジスト一部除去領域のフォトレジストを除去し、前記フォトレジスト完全残留領域のフォトレジストを残しつつ、エッチングしてフォトレジストを除去することで、前記ソース電極及び前記ドレイン電極のパターンと、前記データ線のパターンと、を形成するステップと、
を備えることを特徴とする、請求項1または2に記載のセンサーの製造方法。 - 前記フォトダイオード材料層を堆積することは、順にN型半導体層、I型半導体層及びP型半導体層を堆積することを含むことを特徴とする、請求項3に記載のセンサーの製造方法。
- 前記マスクの不透過領域は、前記受信電極と、前記フォトダイオードと、前記透明電極との領域を形成するために用いられ、前記マスクの半透過領域は、前記ソース電極と、前記ドレイン電極と、前記データ線との領域を形成するために用いられることを特徴とする、請求項3または4に記載のセンサーの製造方法。
- 前記マスクは、デュアルトーンマスクであることを特徴とする、請求項3から5のいずれか一項に記載のセンサーの製造方法。
- 前記透明電極のパターンはウェットエッチングによって形成され、または前記透明電極のパターンは前記フォトダイオードのパターンと共にドライエッチングによって形成されることを特徴とする、請求項1から6のいずれか一項に記載のセンサーの製造方法。
- 前記ソース電極と、前記ドレイン電極と、前記データ線と、前記受信電極との材料は同じであることを特徴とする、請求項1から7のいずれか一項に記載のセンサーの製造方法。
- 前記ゲート線と、前記ゲート電極と、前記バイアス線との材料は同じであることを特徴とする、請求項1から8のいずれか一項に記載のセンサーの製造方法。
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CN201210262962.5A CN102800750B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器的制造方法 |
CN201210262962.5 | 2012-07-26 | ||
PCT/CN2012/084771 WO2014015582A1 (zh) | 2012-07-26 | 2012-11-16 | 传感器的制造方法 |
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US (1) | US9048161B2 (ja) |
EP (1) | EP2879161B1 (ja) |
JP (1) | JP6053928B2 (ja) |
KR (1) | KR101543946B1 (ja) |
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US11404588B2 (en) * | 2019-12-11 | 2022-08-02 | Sharp Kabushiki Kaisha | Imaging panel |
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EP2879161A1 (en) | 2015-06-03 |
WO2014015582A1 (zh) | 2014-01-30 |
US20140335641A1 (en) | 2014-11-13 |
US9048161B2 (en) | 2015-06-02 |
JP6053928B2 (ja) | 2016-12-27 |
CN102800750A (zh) | 2012-11-28 |
KR20140068813A (ko) | 2014-06-09 |
CN102800750B (zh) | 2015-07-01 |
EP2879161B1 (en) | 2017-11-08 |
EP2879161A4 (en) | 2016-03-16 |
KR101543946B1 (ko) | 2015-08-11 |
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