WO2014002747A2 - Ensemble cible - Google Patents

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Publication number
WO2014002747A2
WO2014002747A2 PCT/JP2013/066047 JP2013066047W WO2014002747A2 WO 2014002747 A2 WO2014002747 A2 WO 2014002747A2 JP 2013066047 W JP2013066047 W JP 2013066047W WO 2014002747 A2 WO2014002747 A2 WO 2014002747A2
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WO
WIPO (PCT)
Prior art keywords
sputtering target
brazing material
target
porosity
backing plate
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Application number
PCT/JP2013/066047
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English (en)
Japanese (ja)
Other versions
WO2014002747A3 (fr
Inventor
仁実 松村
中根　靖夫
Original Assignee
株式会社コベルコ科研
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社コベルコ科研 filed Critical 株式会社コベルコ科研
Priority to KR1020147035936A priority Critical patent/KR20150013876A/ko
Priority to CN201380033320.0A priority patent/CN104411861A/zh
Publication of WO2014002747A2 publication Critical patent/WO2014002747A2/fr
Publication of WO2014002747A3 publication Critical patent/WO2014002747A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention is used to form a thin film transistor (TFT) electrode material and a Cu alloy thin film for electrical connection wiring to a sensor in a display device such as a liquid crystal display and an electronic device such as a touch sensor.
  • TFT thin film transistor
  • the present invention relates to a target joined body in which a backing plate is joined through a brazing material.
  • the Cu thin film has been processed finely as electrical connection wiring for electronic devices such as scanning electrodes, signal electrodes, touch sensors, etc. for display devices such as liquid crystal displays because of its low electrical resistance and relatively easy processing. in use.
  • pure Cu has a disadvantage that adhesion to a base material such as glass is poor, and since it is easily oxidized, the surface is easily discolored and a diffusion coefficient in a semiconductor is large.
  • a Cu alloy is generally used as a material for a thin film for electrical connection wiring.
  • the Cu alloy thin film can improve the problems when using the pure Cu thin film as described above, and improve the function when used as a thin film for wiring by selecting an appropriate additive element according to the application. Can be made. Therefore, various types of Cu alloy thin films have been developed for electronic device applications.
  • a sputtering method using a sputtering target is generally employed.
  • an inert gas such as argon is introduced into a vacuum vessel under a low gas pressure, and a high voltage is applied between a sputtering target made of the same material as the thin film and the base material to cause plasma discharge. generate.
  • a method in which a gas ionized by the plasma discharge (argon in this case) is accelerated and collided with a sputtering target, the constituent atoms of the sputtering target are knocked out by inelastic collision, and this is deposited and deposited on a substrate to produce a thin film. is there.
  • the sputtering method has an advantage that a thin film having the same composition as the sputtering target can be continuously formed.
  • an alloy element that does not dissolve in Cu, such as a rare earth element can be forcibly dissolved in a thin film.
  • the sputtering method is an advantageous film forming method from the viewpoint that a stable film can be continuously formed over a large area.
  • a flat plate having a rectangular shape or a disk shape is generally used as a sputtering target applied to such a sputtering method.
  • the sputtering target is soldered on a backing plate (support) for the purpose of cooling or supporting the sputtering target. In general, it is used in a brazed state (target bonded body).
  • the backing plate is intended for cooling the target heated at the time of film formation, and therefore, generally made of pure Cu, Cu alloy, pure Al or Al alloy having high thermal conductivity. in use.
  • the sputtering target attached to the backing plate is made of a metal material corresponding to the thin film to be formed.
  • a Cu alloy having excellent adhesion to the base film is used as the Cu alloy.
  • a Cu alloy for a barrier film that suppresses the diffusion of atoms in the base film and the upper film a Cu—Mn alloy containing a predetermined amount of Mn as an alloy element has become the mainstream.
  • metal bonding using a bonding material such as a low melting point solder (for example, indium-based solder or tin-based solder) having good thermal conductivity and conductivity is generally performed. .
  • Patent Document 1 discloses an oxide film in which Mn preferentially reacts with oxygen to suppress oxidation of Cu in a Cu—Mn alloy thin film used as an electrode of a liquid crystal display. Has been shown to form. This technique shows the usefulness when a Cu—Mn alloy thin film is used as an electrode material of a thin film transistor (TFT).
  • TFT thin film transistor
  • Patent Document 2 shows that the Cu—Mn alloy thin film suppresses the interfacial reaction against the sulfurization of Cu caused by S diffusion from ZnS used as the protective layer of the optical recording layer. Yes.
  • Patent Document 3 discloses a method of manufacturing a sputtering target that improves the wettability of the sputtering target with the brazing material and increases the bonding strength between the sputtering target and the backing plate.
  • the oxide film Since Mn concentrated on the surface of the brazing material is easily oxidized, an oxide film is formed. When bonding by brazing with an oxide film formed on the surface of the brazing material, the oxide film has poor wettability with the brazing material. Porosity (bubbles) will be generated. Since the porosity portion is inferior in thermal conductivity, a partial temperature increase of the sputtering target occurs during film formation by sputtering, and unevenness in the surface of the formed film thickness tends to occur. Further, when the temperature of the sputtering target rises, the brazing material is melted and protrudes from the interface between the sputtering target and the backing plate, causing abnormal discharge, and there is a problem that stable film formation cannot be performed. The protruding brazing material adheres to the glass substrate and causes particles and splash.
  • the present invention has been made paying attention to the above-described circumstances, and its purpose is to reduce the in-plane thickness of the molded film when sputtering is performed using a Cu—Mn alloy sputtering target.
  • An object of the present invention is to provide a target bonded body capable of preventing the uniformity and forming a thin film having a uniform thickness.
  • Another object of the present invention is to provide a target bonded body capable of preventing abnormal discharge due to melting of the brazing material and performing stable film formation and preventing generation of particles and splash.
  • the target bonded body of the present invention that can achieve the above object is a target bonded body that includes a sputtering target, a backing plate, and a brazing material, and the back surface of the sputtering target is bonded to the backing plate via the brazing material.
  • the sputtering target is a Cu—Mn alloy containing 2 to 30 atom% of Mn, and the total projected area of the porosity existing in the brazing material on the back surface of the sputtering target is equal to the entire bonding region of the back surface of the sputtering target. The point is that it is 16% or less with respect to the area.
  • the target bonded body of the present invention is a target bonded body that includes a sputtering target, a backing plate, and a brazing material, and the back surface of the sputtering target is bonded to the backing plate via the brazing material, and the sputtering target includes Mn And a projected area of each porosity on the back surface of the sputtering target on the back surface of the bonding target in the brazing material relative to the area of the entire bonding region on the back surface of the sputtering target. It is also summarized in that it is 0.2% or less.
  • the joining end portion means a region from both end portions (actually, the entire circumference portion) of the sputtering target to a portion inside 5% of the diameter of the sputtering target.
  • the target joined body of the present invention is a target joined body comprising a sputtering target, a backing plate, and a brazing material, and the back surface of the sputtering target is joined to the backing plate via the brazing material
  • the sputtering target is a Cu—Mn alloy containing 2 to 30 atomic% of Mn, and the total projected area of the porosity existing in the brazing material on the back surface of the sputtering target is the area of the entire bonding region on the back surface of the sputtering target.
  • the joining end portion means a region from both end portions (actually, the entire peripheral portion) of the sputtering target to a portion inside 5% of the diameter of the sputtering target.
  • examples of a brazing material preferably used include indium-based solder and tin-based solder.
  • the backing plate is at least one selected from the group consisting of copper, copper alloy, aluminum and aluminum alloy.
  • the total projected area of the porosity existing in the brazing material on the back surface of the sputtering target is defined in a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target.
  • the projected area on the back surface of the sputtering target of each porosity existing in the brazing material is formed by sputtering by defining a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target.
  • a low melting point metal such as an indium group (In group) solder or a tin group (Sn group) solder is used as the bonding material, and heat treatment is performed. A low melting point metal is melted to fuse the target material.
  • a Cu—Mn alloy is used as a sputtering target, the contained Mn elutes into the brazing material, and an oxide film is formed on the brazing material surface. Thus, porosity is likely to occur in the brazing material. Such a state causes various problems as described above.
  • the present inventors have conducted extensive research on the structure of the target bonded body that can solve such problems.
  • the target joined body in which the sputtering target material and the backing plate are joined via the bonding material, (a) the total projected area of the porosity existing in the brazing material on the back surface of the sputtering target, and (b) the brazing material
  • the above object can be achieved brilliantly by controlling the projected area of each porosity existing on the back surface of the sputtering target to a predetermined ratio with respect to the total area of the bonding region on the back surface of the sputtering target.
  • the present invention has been completed.
  • FIG. 1 is a schematic explanatory view (cross-sectional view) schematically showing a finished product of a target joined body.
  • the target bonded body 1 of the present invention has a configuration in which a sputtering target 2 and a backing plate 3 are bonded via a brazing material 4.
  • the brazing material 4 shows a solidified state, and the porosity that may exist therein is not shown.
  • the projected area of the porosity existing in the brazing material 4 onto the back surface of the sputtering target 2 is the area of the porosity when the brazing material 4 is viewed from above in FIG.
  • the ratio of the total area to the total area of the bonding region on the back surface of the sputtering target 2 (hereinafter sometimes simply referred to as “projected area ratio”) is 16% or less.
  • the reason why the projected area ratio is defined as 16% or less is that when the projected area ratio increases, the uniform cooling of the sputtering target 2 at the time of sputtering deteriorates, and the deposition rate becomes nonuniform in the sputtering target 2.
  • a preferable projected area ratio is 10% or less, more preferably 7% or less.
  • the “total projected area” is an area of a shadow formed by projecting two porosity simultaneously.
  • the sputtering target 2 and the backing plate 3 are joined with a molten brazing material (see 4a in FIG. 2 described later), for example, the sputtering target 2 is moved up and down (pumping). (See FIG. 2 described later)
  • the porosity 5 in the molten brazing material 4a may be expelled.
  • the temperature of the brazing material for example, indium-based solder
  • the temperature of the brazing material is set to a viscous value so that the porosity in the brazing material is easily discharged into the atmosphere by buoyancy during vertical movement. It is preferable to control the temperature by keeping it at 175 ° C. or higher, and further performing pumping more than 10 times.
  • the molten brazing material 4 a is injected between the sputtering target 2 and the backing plate 3
  • the molten brazing material 4 a is injected and injected between the sputtering target 2 and the backing plate 3 using the injector 8. (See FIG. 3 below).
  • the temperature of the brazing material (for example, indium-based solder) in the injector is maintained at 175 ° C. or higher to reduce the viscosity.
  • the bubbles in the brazing material are naturally lifted and removed.
  • the backing plate 3 is placed on the vibration table 9 (see FIG. 4 to be described later), and the sputtering target 2 is integrally swung. By doing so, the porosity 5 in the molten brazing material 4a may be expelled (see FIG. 4 described later).
  • the temperature of the brazing material for example, indium-based solder
  • the time to incline and tilt by more than °.
  • the projected area of the porosity existing in the brazing material 4, particularly at least in the bonded end, onto the back surface of the sputtering target 2 is larger than the area of the entire bonded region on the back surface of the sputtering target. It is also useful to be 0.2% or less.
  • the “joining end” means a region from the both ends (actually, the entire circumference) of the sputtering target 2 shown in FIG. 1 to 5% (L 1 / L 0 ⁇ 100) inward.
  • the projected area of each porosity on the back surface of the sputtering target at the junction end may be referred to as “the size of each porosity”.
  • the size of each porosity By setting it to 0.2% or less with respect to the total area of the bonding region, it is possible to prevent abnormal discharge due to melting of the brazing material and perform stable film formation and to prevent generation of particles and splash.
  • the influence of the size of each porosity on the above-mentioned characteristics is large at the joint end. Therefore, in the said area
  • the magnitude of each porosity is preferably 0.1% or less, more preferably less than 0.1% (measurement limit).
  • each porosity In order to control the size of each porosity as described above, it is basically the same as when controlling the projected area ratio. However, control is performed so that at least the joint end is controlled by the above control. Just do it. Specifically, at the time of bonding the sputtering target and the backing plate, the temperature of the brazing material (for example, indium-based solder) is maintained at 175 ° C. or higher, and the generated porosity is determined by the number of pumping times of the sputtering target or the brazing material by the injector. It is only necessary to control the amount of extrusion or the time for which the sputtering target is tilted and swung.
  • the brazing material for example, indium-based solder
  • the sputtering target used in the present invention is a Cu—Mn alloy containing 2 to 30 atomic% of Mn.
  • Mn is contained to form an oxide film layer on the sputtering target.
  • the Mn content may be about 0.1 atomic% or more, and the above effect increases as the Mn content increases. And it will be in the state which a porosity tends to produce
  • the lower limit is defined as 2 atomic% as the Mn content at which the above effect is exhibited but porosity is easily generated. Preferably it is 5 atomic% or more, More preferably, it is 10 atomic% or more.
  • the Mn content is excessive, the Cu content is relatively small and the conductivity of the Cu-Mn alloy is lowered, making it difficult to perform the function for electrical connection wiring.
  • the Mn content is 25 atomic% or less, More preferably, it is 20 atomic% or less.
  • the sputtering target used in the present invention may contain other components that do not impair the characteristics thereof.
  • examples of such components include Zn, Ni, Mg, Ti, Al and the like, and it is acceptable to contain one or more of these components up to 2 atomic% (the balance being Cu and inevitable impurities).
  • the backing plate used in the present invention is not particularly limited, but various known backing plates can be used.
  • a backing plate including at least one selected from the group consisting of copper, various copper alloys, aluminum, and various aluminum alloys is used as the backing plate having excellent heat resistance, conductivity, and thermal conductivity.
  • the backing plate may be provided with cooling means such as a cooling water channel.
  • conventionally used low melting point solder for example, metal such as indium-based solder or tin-based solder
  • metal such as indium-based solder or tin-based solder
  • specific examples include indium-based solders such as 52 mass% In-48 mass% Sn and 97 mass% In-3 mass% Ag, and tin-based solders such as 91 mass% Sn-9 mass% Zn.
  • the target joined body of the present invention can be produced by the following procedure.
  • a plate-like sputtering target is produced by, for example, machining a melt-cast Cu—Mn alloy ingot.
  • the produced sputtering target is bonded to a backing plate using a brazing material to obtain a target bonded body.
  • the target assembly manufactured in this way is attached to a sputtering apparatus, which is a vacuum apparatus, and an electric field is applied between the backing plate and the substrate opposite thereto, thereby generating plasma between the sputtering target and the substrate.
  • a sputtering apparatus which is a vacuum apparatus
  • an electric field is applied between the backing plate and the substrate opposite thereto, thereby generating plasma between the sputtering target and the substrate.
  • Example 1 The ingot of Cu-10 atomic% Mn alloy that has been melt cast is hot-rolled (rolling temperature: 700 ° C., rolling reduction: 80%), cut, machined, and disk-shaped having a diameter of 100 mm ⁇ thickness of 5 mm To obtain a sputtering target 2 (Cu—Mn alloy target).
  • the sputtering target 2 and a pure copper backing plate 3 (size: diameter 126 mm ⁇ thickness 7 mm) were bonded and bonded together using a pure indium brazing material to produce a target bonded body 1.
  • FIG. 2 A state in which the sputtering target 2 is arranged on the backing plate 3 through a molten brazing material (molten brazing material) 4a is schematically shown in FIG.
  • the molten brazing material 4a contains porosity 5 (bubbles), but the sputtering target 2 is placed on the backing plate 3 with the sputtering target 2 placed on the backing plate 3 via the molten brazing material 4a. It was moved up and down 12 times (indicated by an arrow A in FIG. 2) to expel the porosity 5 in the molten brazing material 4a, and the projected area ratio of the porosity 5 and the size of the porosity 5 were controlled.
  • reference numeral 6 denotes a brazing material weir.
  • the target joined body 1 was cooled to a temperature at which the molten brazing material 4a was solidified, and the brazing material 4 protruding from the target joined body 1 was removed to obtain a finished product (Experimental Example 1).
  • the completed product of the target bonded body 1 is as shown in FIG. 1 (schematic explanatory drawing).
  • the projected area ratio of porosity and the size of each porosity were measured using a water immersion type ultrasonic flaw detector (“Ultrasound fluoroscopy device HIS-2”, trade name, manufactured by Kleut Kramer). .
  • the reflected echo by the porosity was detected by the ultrasonic flaw detector, the projected area of the porosity was measured, and the ratio to the entire back surface area of the sputtering target 2 was calculated.
  • the maximum value of the projection area of each porosity is measured in the area
  • Example 2 In the same manner as in Experimental Example 1, the sputtering target 2 (Cu—Mn alloy target) was machined, and this and a pure copper backing plate 3 (size: diameter 126 mm ⁇ thickness 7 mm) were used with a pure indium brazing material, The target bonded body 1 was manufactured by bonding and bonding. At this time, as shown in FIG. 3 (schematic explanatory drawing), the molten brazing material 4a is injected and injected between the sputtering target 2 and the backing plate 3 using the injector 8, and the molten brazing material 4a The porosity 5 (bubbles) was driven out, and the projected area ratio of the porosity and the size of each porosity at the joint end were controlled.
  • the target joined body 1 was cooled to a temperature at which the molten brazing material 4a was solidified, and the brazing material 4 protruding from the target joined body 1 was removed to obtain a finished product (Experimental Example 2).
  • the completed product of the target bonded body 1 is as shown in FIG. 1 (schematic explanatory drawing).
  • the projected area ratio of the porosity and the size of each porosity at the joined end were measured in the same manner as in Experimental Example 1.
  • Example 3 In the same manner as in Experimental Example 1, the sputtering target 2 (Cu—Mn alloy target) was machined, and this and a pure copper backing plate 3 (size: diameter 126 mm ⁇ thickness 7 mm) were used with a pure indium brazing material, The target bonded body 1 was manufactured by bonding and bonding. At this time, in order to expel the porosity (pores) in the molten brazing material 4a, the molten brazing material 4a is interposed between the sputtering target 2 and the backing plate 3 as shown in FIG.
  • the target joined body 1 was cooled to a temperature at which the molten brazing material 4a was solidified, and the brazing material 4 protruding from the target joined body 1 was removed to obtain a finished product (Experimental Example 3).
  • the completed product of the target bonded body 1 is as shown in FIG. 1 (schematic explanatory drawing).
  • the projected area ratio of the porosity and the size of each porosity at the joined end were measured in the same manner as in Experimental Example 1.
  • Each target joined body 1 was cooled to a temperature at which the molten brazing material 4a was solidified, and the brazing material 4 protruding from the target joined body 1 was removed to obtain finished products (Experimental Examples 4 to 6).
  • the completed product of the target bonded body 1 is as shown in FIG. 1 (schematic explanatory drawing).
  • the projected area ratio of the porosity and the size of each porosity at the joined end were measured in the same manner as in Experimental Example 1.
  • the target bonded bodies 1 of Experimental Examples 1 to 6 were mounted on a magnetron DC sputtering apparatus, and sputtering was performed with a DC power of 260 W and a pressure of 2 mTorr. After performing pre-sputtering for 10 minutes, a film having a thickness of about 300 nm is formed on a glass substrate having a diameter of 50 mm in 1 minute, and the initial characteristic (initial characteristic) is a film at a distance of 20 mm from the center of the substrate. The thickness was measured at 8 points.
  • the total projected area of the porosity existing in the brazing material on the back surface of the sputtering target is defined in a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target.
  • the projected area on the back surface of the sputtering target of each porosity existing in the brazing material is formed by sputtering by defining a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　L'invention concerne un ensemble cible qui comprend une cible de pulvérisation, une plaque de support, et un matériau de brasage, et dans lequel la surface arrière de la cible de pulvérisation est reliée à la plaque de support, le matériau de brasage étant situé entre celles-ci. La cible de pulvérisation est composée d'un alliage Cu-Mn contenant de 2 à 30 % d'atomes de Mn, et la surface projetée totale, sur la surface arrière de la cible de pulvérisation, des porosités dans le matériau de brasage est d'au plus 16% par rapport à la surface de la totalité de la région de liaison sur la surface arrière de la cible de pulvérisation.
PCT/JP2013/066047 2012-06-26 2013-06-11 Ensemble cible WO2014002747A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020147035936A KR20150013876A (ko) 2012-06-26 2013-06-11 타겟 접합체
CN201380033320.0A CN104411861A (zh) 2012-06-26 2013-06-11 靶接合体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012143497A JP5952653B2 (ja) 2012-06-26 2012-06-26 ターゲット接合体
JP2012-143497 2012-06-26

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WO2014002747A2 true WO2014002747A2 (fr) 2014-01-03
WO2014002747A3 WO2014002747A3 (fr) 2014-03-06

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CN (1) CN104411861A (fr)
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WO (1) WO2014002747A2 (fr)

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Publication number Priority date Publication date Assignee Title
US10760156B2 (en) * 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure

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Publication number Priority date Publication date Assignee Title
JP6677853B1 (ja) * 2019-02-07 2020-04-08 住友化学株式会社 スパッタリングターゲット、ターゲット材とバッキングプレートを接合する方法およびスパッタリングターゲットの製造方法
US20220310371A1 (en) 2021-03-26 2022-09-29 Sumitomo Chemical Company, Limited Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target
KR102707659B1 (ko) 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체
KR20240072544A (ko) 2022-11-17 2024-05-24 바짐테크놀로지 주식회사 스퍼터링 타겟 접합방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228066A (ja) * 1985-07-26 1987-02-06 Tanaka Kikinzoku Kogyo Kk スパツタリング用タ−ゲツトの製造方法
JPH06128735A (ja) * 1992-10-20 1994-05-10 Mitsubishi Kasei Corp スパッタリングターゲットの製造方法
JPH07509026A (ja) * 1992-07-08 1995-10-05 マティリアルズ　リサーチ　コーポレイション スパッタリングターゲットを裏当て部材にはんだ付けする方法
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP2010018883A (ja) * 2008-06-10 2010-01-28 Tosoh Corp 円筒形スパッタリングターゲット及びその製造方法
JP2010053445A (ja) * 2008-08-01 2010-03-11 Mitsubishi Materials Corp フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101070185B1 (ko) * 2006-10-03 2011-10-05 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228066A (ja) * 1985-07-26 1987-02-06 Tanaka Kikinzoku Kogyo Kk スパツタリング用タ−ゲツトの製造方法
JPH07509026A (ja) * 1992-07-08 1995-10-05 マティリアルズ　リサーチ　コーポレイション スパッタリングターゲットを裏当て部材にはんだ付けする方法
JPH06128735A (ja) * 1992-10-20 1994-05-10 Mitsubishi Kasei Corp スパッタリングターゲットの製造方法
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP2010018883A (ja) * 2008-06-10 2010-01-28 Tosoh Corp 円筒形スパッタリングターゲット及びその製造方法
JP2010053445A (ja) * 2008-08-01 2010-03-11 Mitsubishi Materials Corp フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10760156B2 (en) * 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure

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WO2014002747A3 (fr) 2014-03-06
CN104411861A (zh) 2015-03-11
JP2014005517A (ja) 2014-01-16
KR20150013876A (ko) 2015-02-05

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