WO2013191116A1 - Procédé de formation d'une matière d'interface thermique et structure de dissipation thermique - Google Patents

Procédé de formation d'une matière d'interface thermique et structure de dissipation thermique Download PDF

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Publication number
WO2013191116A1
WO2013191116A1 PCT/JP2013/066540 JP2013066540W WO2013191116A1 WO 2013191116 A1 WO2013191116 A1 WO 2013191116A1 JP 2013066540 W JP2013066540 W JP 2013066540W WO 2013191116 A1 WO2013191116 A1 WO 2013191116A1
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Prior art keywords
component
groups
mass
interface material
thermal interface
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PCT/JP2013/066540
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English (en)
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Kazumi Nakayoshi
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Dow Corning Toray Co., Ltd.
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Publication of WO2013191116A1 publication Critical patent/WO2013191116A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/002—Physical properties
    • C08K2201/005—Additives being defined by their particle size in general
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/14—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a method of forming a thermal interface material, and to a heat dissipation structure having the thermal interface material.
  • a known method of efficiently transmitting heat generated from an electronic part to a heat sink at the time of operation is to use a thermal interface material between the electronic part and the heat sink.
  • Another known method is to form a thermal interface material from a thermosetting polymer containing a low-melting metal.
  • Japanese Unexamined Patent Application Publication No. H07- 207160 discloses that a silicone composition comprising an organopolysiloxane, a fine powder filler, and a low-melting metal or alloy is cured by heating to a temperature greater than or equal to the melting point of the low-melting metal or alloy.
  • Japanese Unexamined Patent Application Publication No. H07- 207160 discloses that a silicone composition comprising an organopolysiloxane, a fine powder filler, and a low-melting metal or alloy is cured by heating to a temperature greater than or equal to the melting point of the low-melting metal or alloy.
  • a curable organopolysiloxane composition comprising an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organohydrogenpolysiloxane having at least 2 silicon- bonded hydrogen atoms in a molecule, gallium and/or an alloy thereof, with a melting point of from 0 to 70°C, a thermally conductive filler with an average particle size of from 0.1 to 100 ⁇ , a platinum-based catalyst, and a reaction inhibitor is cured by heating to 80 to 180°C under pressure between an electronic part and a heat dissipating material.
  • Japanese Unexamined Patent Application Publication No. 2003- 176414 discloses that a thermally conductive silicone composition comprising an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule,
  • organohydrogenpolysiloxane having at least 2 silicon-bonded hydrogen atoms in a molecule, a low-melting metal powder with a melting temperature of from 40 to 250°C and an average particle size of from 0.1 to 100 ⁇ , a highly thermally conductive filler with a melting temperature greater than 250°C and an average particle size of from 0.1 to 100 ⁇ , a catalyst selected from a group comprising platinum and platinum compounds, and an inhibitor for inhibiting the catalytic activity thereof is first cured by heating at a temperature less than or equal to the melting point of the low-melting metal powder, and the low-melting metal powder is then melted by heating to a temperature greater than or equal to the melting point of the low-melting metal powder.
  • thermosetting composition comprising a thermosetting matrix, a spacer, and a low-melting metal filler having a softening temperature lower than the curing temperature of the matrix and having an average particle size larger than the spacer is placed between a first substrate and a second substrate and heated to a temperature lower than the curing temperature of the matrix and greater than or equal to the softening temperature of the low-melting metal filler. The composition is then heated to a temperature greater than or equal to the curing temperature of the matrix.
  • thermoly conductive silicone grease composition comprising an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in a molecule, an organopolysiloxane having at least 2 alkenyl groups in
  • organohydrogenpolysiloxane having at least 2 silicon-bonded hydrogen atoms in a molecule, a thermally conductive filler, a platinum-based catalyst, and a reaction inhibitor, the thermally conductive filler containing over 90% by mass and at most 100% by mass of an indium powder with an average particle size of from 0.1 to 100 ⁇ , is heated at a temperature greater than or equal to the melting point of the indium powder under pressure.
  • the object of the present invention is to provide a method of forming a thermal interface material which efficiently transmits heat generated from an electronic part to a heat sink, and to provide a heat dissipation structure having the thermal interface material. Disclosure of Invention
  • thermosetting polymer composition by heating under pressure between an electronic part and a heat sink, the thermosetting polymer composition comprising:
  • thermosetting polymer (A) a thermosetting polymer
  • component (B) a bismuth/tin-based alloy powder which melts at a temperature lower than the curing temperature of component (A) and has an average particle size of from 1 to 100 ⁇ ;
  • (C) a roughly spherical thermally conductive powder which does not melt at the curing temperature of component (A) and has an average particle size of from 0.1 to 50 ⁇ , wherein the total content of components (B) and (C) is from 800 to 2,200 parts by mass per 100 parts by mass of component (A), and the content of component (B) is from 30 to 90% by mass of the total amount of components (B) and (C), and the average particle size of component (B) is greater than or equal to the average particle size of component (C).
  • the heat dissipation structure of the present invention is characterized by being formed by the method described above, and by comprising an electronic part, a thermal interface material, and a heat sink.
  • the method of forming the thermal interface material of the present invention has the feature of efficiently forming the thermal interface material which efficiently transmits heat generated from an electronic part to a heat sink.
  • the heat dissipation structure of the present invention has the feature of enabling the efficient transmission of heat generated from an electronic part to a heat sink.
  • Figure 1 is an SEM photograph of the cross section of a heat dissipation structure produced in Practical Example 1.
  • Figure 2 is an SEM photograph of the cross section of a heat dissipation structure produced in Practical Example 2.
  • Figure 3 is an SEM photograph of the cross section of a heat dissipation structure produced in Comparative Example 1.
  • Figure 4 is an SEM photograph of the cross section of a heat dissipation structure produced in Comparative Example 3.
  • Figure 5 is an SEM photograph of the cross section of a heat dissipation structure produced in Comparative Example 5.
  • thermosetting polymer for component (A) is a component for forming a matrix of a thermal interface material.
  • the component (A) include thermosetting silicone resins, thermosetting epoxy resins, thermosetting phenol resins, thermosetting novolak resins, thermosetting acrylic resins, thermosetting polyimide resins, and thermosetting urethane resins, of these, thermosetting silicone resins are particularly preferable.
  • the thermosetting silicone resins include addition reaction curable silicone compositions, condensation reaction curable silicone compositions, and peroxide reaction curable silicone compositions. Of these, addition reaction curable silicone compositions are particularly preferable.
  • An example of the addition reaction curable silicone composition is a composition comprising (a) an organopolysiloxane having at least 2 alkenyl groups in a molecule, (b) an organopolysiloxane having at least 2 silicon-bonded hydrogen atoms in a molecule, and (c) a hydrosilylation-reaction catalyst and, if necessary, a reaction inhibitor and an adhesion promoter.
  • the organopolysiloxane for component (a) is the main component of the curable silicone composition and has at least 2 alkenyl groups in a molecule.
  • alkenyl groups in component (a) include vinyl groups, allyl groups, butenyl groups, pentenyl groups, hexenyl groups, and heptenyl groups. Of these, vinyl groups are particularly preferable.
  • Examples of groups bonding to silicon atoms other than alkenyl groups in component (a) include halogen substituted or unsubstituted monovalent hydrocarbon groups excluding alkenyl groups, such as methyl groups, ethyl groups, propyl groups, butyl groups, pentyl groups, hexyl groups, or similar alkyl groups; phenyl groups, tolyl groups, xylyl groups, or similar aryl groups; benzyl groups, phenethyl groups, or similar aralkyl groups; 3-chloropropyl groups, 3,3,3-trifluoropropyl groups, or similar halogenated alkyl groups; alkoxy groups such as methoxy groups, ethoxy groups, and propoxy groups; and hydroxyl groups.
  • alkenyl groups such as methyl groups, ethyl groups, propyl groups, butyl groups, pentyl groups, hexyl groups, or similar alkyl groups
  • component (a) is not particularly limited, but it is preferable for the viscosity at 25°C to be within the range of 50 to 500,000 mPa-s due to the excellent mechanical strength of the resulting thermal interface material.
  • the organopolysiloxane for component (b) is a curing agent of the curable silicone composition and has at least 2 silicon-bonded hydrogen atoms in a molecule.
  • groups bonding to silicon atoms other than hydrogen atoms in the component (b) include halogen substituted or unsubstituted monovalent hydrocarbon groups not having unsaturated aliphatic bonds, such as methyl groups, ethyl groups, propyl groups, butyl groups, pentyl groups, hexyl groups, or similar alkyl groups; phenyl groups, tolyl groups, xylyl groups, or similar aryl groups; benzyl groups, phenethyl groups, or similar aralkyl groups; 3-chloropropyl groups, 3,3,3-trifluoropropyl groups, or similar halogenated alkyl groups; alkoxy groups such as methoxy groups, ethoxy groups, and propoxy groups; and hydroxyl groups.
  • component (b) is not particularly limited, but it is preferable for the viscosity at 25°C to be within the range of 1 to 50,000 mPa s due to the excellent mechanical strength of the resulting thermal interface material.
  • the content of component (b) is an amount sufficient to cure the curable silicone composition. It is preferable for the amount of silicon-bonded hydrogen atoms in this component to be within the range of 0.1 to 10 mol per 1 mol of the alkenyl groups in component (a) due to the favorable heat resistance of the resulting thermal interface material.
  • the hydrosilylation-reaction catalyst for component (c) is a catalyst for accelerating the curing of the curable silicone composition, and examples include platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts. Of these, platinum-based catalysts are preferable.
  • platinum-based catalysts include platinum black, platinum-supported alumina powders, platinum-supported silica powders, platinum-supported carbon powders, chloroplatinic acid, alcohol solutions of chloroplatinic acid, olefin complexes of platinum, and alkenylsiloxane complexes of platinum.
  • Further examples include thermoplastic resin microparticles such as methyl methacrylate resins, polycarbonate, polystyrene, and silicone resins containing these platinum-based catalysts.
  • the content of component (c) is an amount sufficient to accelerate the curing of the curable silicone composition. Specifically, it is preferable for the amount of the catalyst metal in this component to be within the range of 0.1 to 1 ,000 ppm in terms of mass units with respect to component (a). It is particularly preferable for the amount to be within the range of 1 to 500 ppm.
  • the curable silicone composition described above may also contain an adhesion promoter as another optional component.
  • adhesion promoter include alkoxysilane compounds, such as vinyl trimethoxysilane, vinyl triethoxysilane, methyl vinyl dimethoxysilane, methyl vinyl diethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, 3 -glycidoxypropyl vinyldimethoxysilane, and 3- methacryloxypropyltrimethoxysilane; diorganosiloxane oligomers having silicon atom- bonded alkoxy groups, such as dimethylsiloxane oligomers having silicon atom-bonded methoxy groups and vinyl groups in a molecule, dimethylsiloxane oligomers having silicon-bonded methoxy groups and silicon-bonded hydrogen atom groups in a molecule, dimethylsiloxane oligomers having silicon-bonded methoxy groups, vinyl groups, and 3-
  • diorganosiloxane oligomers in which some or all of these vinyl groups are substituted with alkenyl groups other than vinyl groups such as allyl groups; reaction products of 3- glycidoxypropyltrialkoxysilanes such as 3-glycidoxypropyltrimethoxysilane and 3- glycidoxypropyltriethoxysilane and 3-aminopropyltrialkoxysilanes such as 3- aminoxypropyltrimethoxysilane and 3-aminopropyltriethoxysilane; condensation reaction products of the 3-glycidoxypropyltrialkoxysilane described above and diorganosiloxane oligomers capped with silanol groups such as methylvinylsiloxane oligomers capped with silanol groups and copolymer oligomers of dimethylsiloxane and methylvinylsiloxane capped with silanol groups; and condensation reaction products of 3- me
  • the content of this adhesion promoter is not particularly limited, but it is preferably at most 20 parts by mass per 100 parts by mass of component (a) so as to inhibit the gelling of the curable silicone composition during storage.
  • the curable silicone composition described above may also contain a treatment agent for treating the surface of the component (B) or the component (C) as another optional component.
  • a treatment agent for treating the surface of the component (B) or the component (C) as another optional component.
  • the treatment agent include
  • dimethylpolysiloxanes capped at one molecular terminal with a trimethoxysiloxy group and at the other molecular terminal with a trimethylsiloxy group dimethylpolysiloxanes capped at one molecular terminal with a trimethoxysiloxy group and at the other molecular terminal with a dimethylvinylsiloxy group
  • dimethylpolysiloxanes capped at one molecular terminal with a trimethoxysilyl ethyl group and at the other molecular terminal with a dimethylvinylsiloxy group dimethylpolysiloxanes having trimethoxysilyl ethyl groups bonded to silicon atoms in the molecular chains; diorganopolysiloxanes in which some or all of the
  • the content of this treatment agent is not particularly limited, but the content is preferably within the range of 0.005 to 10 parts by mass and particularly preferably within the range of 0.05 to 10 parts by mass per 100 parts by mass of component (a).
  • composition described above may also contain a reaction inhibitor as an optional component.
  • a reaction inhibitor include alkyne alcohols such as 2-methyl-3-butyn-2-ol, 3,5-dimethyl-l -hexyn-3-ol, and 2-phenyl-3-butyn-2-ol; enyne compounds such as 3-methyl-3-penten-l -yne and 3,5-dimethyl-3-hexen-l -yne;
  • alkenylsiloxane compounds such as 1 ,3, 5, 7-tetramethyl- 1 ,3,5,7- tetravinylcyclotetrasiloxane, and l,3,5,7-tetramethyl-l ,3,5,7- tetrahexenylcyclotetrasiloxane; and other benzotriazoles.
  • the content of the reaction inhibitor in the composition described above is not particularly limited, but is preferably within the range of 0.001 to 5 parts by mass per 100 parts by mass of component (a).
  • component (B) is a bismuth/tin-based alloy powder which melts at a temperature lower than the curing temperature of component (A) and has an average particle size of from 1 to 100 ⁇ .
  • Component (B) is a component which forms a thermal conductivity path for efficiently transmitting heat generated from an electronic part to a heat sink.
  • Component (B) is essentially an alloy comprising bismuth and tin but may also contain small quantities of indium, gallium, copper, lead, zinc, cadmium, and the like as other optional metals in order to control the melting point.
  • the melting point of component (B) is preferably within the range of 100 to 150°C, and more preferably within the range of 100 to 140°C. This is because when the melting point is less than or equal to the upper limit of the range described above, a thermal conductivity path can be formed easily while inhibiting heat damage to the electronic part to which the resulting
  • thermosetting polymer composition is applied.
  • the melting point is greater than or equal to the lower limit of the range described above, the thermosetting polymer composition has good handling workability.
  • the average particle size of component (B) is within the range of 1 to 100 ⁇ and is preferably within the range of 20 to 80 ⁇ . This is because when the average particle size of component (B) is greater than or equal to the lower limit of the range described above, the resulting thermosetting polymer composition has good handling workability and good coating properties. On the other hand, when the average particle size of component (B) is less than or equal to the upper limit of the range described above, the component can be dispersed uniformly into the resulting thermosetting polymer composition, and the composition can thus be applied as a thin coat.
  • the shape of component (B) is not particularly limited, and examples include spherical and irregular shapes.
  • Component (C) is a roughly spherical thermally conductive powder which does not melt at the curing temperature of component (A) and has an average particle size of from 0.1 to 50 ⁇ .
  • the average particle size of component (C) is within the range of 0.1 to 50 ⁇ and is preferably within the range of 0.1 to 10 ⁇ . This is because when the average particle size is greater than or equal to the lower limit of the range described above, the resulting thermosetting polymer composition has good handling workability and good coating properties. On the other hand, when the average particle size is less than or equal to the upper limit of the range described above, the component can be dispersed uniformly into the resulting thermosetting polymer composition, and the composition can thus be applied as a thin coat.
  • the shape of component (C) is roughly spherical, and specific examples include round, spherical, and regular spherical shapes.
  • component (C) examples include metal powders such as silver, copper, aluminum, and nickel; metal oxide powders such as aluminum oxide, zinc oxide, and magnesium oxide; and metal nitride powders such as aluminum nitride and boron nitride. One type or two or more types of these powders can be mixed and used as component (C).
  • the total content of components (B) and (C) is within the range of 800 to 2,200 parts by mass and preferably within the range of 800 to 1 ,500 parts by mass per 100 parts by mass of component (A). This is because when the total content of components (B) and (C) is greater than or equal to the lower limit of the range described above, the resulting thermal interface material has good thermal conductivity. On the other hand, when the total content is less than or equal to the upper limit of the range described above, the resulting thermosetting polymer composition has good handling workability and good coating properties.
  • the amount of component (B) is within the range of 30 to 90% by mass and preferably within the range of 30 to 70% by mass of the total amount of components (B) and (C). This is because when the content of component (B) is greater than or equal to the lower limit of the range described above, a thermal conductivity path can be formed easily, and the thermal conductivity of the resulting thermal interface material improves. On the other hand, when the content is less than or equal to the upper limit of the range described above, the handling workability of the resulting thermosetting polymer composition improves.
  • the average particle size of component (B) is greater than or equal to the average particle size of component (C). This is because it becomes easy for component (B) to melt and to form a thermal conductivity path.
  • the method of preparing the thermosetting polymer composition described above is not particularly limited, but one example is a method of mixing components (A) to (C) at a temperature lower than the melting point of component (B) (for example, at room temperature). Another example is a method of uniformly mixing components (a), (B), and (C) at a temperature lower than the melting point of component (B), mixing component (b) into the mixture, and then mixing component (c) into the mixture when an addition reaction curable silicone composition comprising components (a) to (c) is used as component (A).
  • the viscosity at 25°C of the thermosetting polymer composition prepared in this way is not particularly limited but is preferably within the range of 10 to 1,000 Pa s and particularly preferably within the range of 20 to 300 Pa-s. This is because when the viscosity is greater than or equal to the lower limit of the range described above, the sedimentation separation of component (B) or (C) becomes unlikely to occur during storage, and problems such as liquid dripping become unlikely to arise when the composition is applied between an electronic part and a heat sink. On the other hand, when the viscosity is less than or equal to the upper limit of the range described above, the composition has good coating properties.
  • thermosetting polymer composition described above is first applied to the electronic part or the heat sink.
  • the method of applying the thermosetting polymer composition is not limited, and examples include quantitative coating with a dispenser and coating with a squeegee.
  • the electronic part and the heat sink are attached to one another via the thermosetting polymer composition.
  • thermosetting polymer composition is cured by heating under pressure.
  • the heating temperature is a temperature at which component (A) cures and at which component (B) melts.
  • a thermal conductivity path can be formed by heating the composition under pressure so as to cure component (A) and melt component (B).
  • the thickness of the resulting thermal interface material can be secured by the particle size of component (C). This thickness is preferably within the range of 5 to 100 ⁇ and particularly preferably within the range of 10 to 50 ⁇ .
  • the composition may be further heated under pressure or without pressure.
  • the heat dissipation structure of the present invention is formed by the method described above, and comprises an electronic part, a thermal interface material, and a heat sink. Since a thermal conductivity path is formed inside the thermal interface material, such a heat dissipation structure can efficiently transmit heat generated from the electronic part to the heat sink at the time of operation.
  • thermosetting polymer composition was sandwiched between two silicon chips (1 cm square). After the composition was cured by heating for 5 minutes at 150°C while applying 20 N of pressure, the composition was further heated for 5 minutes in an oven at 150°C to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 17 ⁇ with a variable measuring force-type Digimatic Micrometer (manufactured by Mitsutoyo Corporation; model: CLM2-15QM).
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.06 cm °C/W with a steady state method using a thermal resistivity measurement device (manufactured by Hitachi, Ltd.).
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 12 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.03 cm 2 o C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 27 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.19 cm -°C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 19 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.05 cm 2 -°C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition was sandwiched between two silicon chips (1 cm square). After the composition was cured by heating for 10 minutes at 120°C while applying 20 N of pressure and further heated for 5 minutes at 170°C, the composition was further heated for 5 minutes in an oven at 170°C to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 42 ⁇ in the same manner as in Practical
  • Example 1 The heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.17 cm 2>0 C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition The viscosity of this thermosetting polymer composition was measured to be 42 Pa-s in the same manner as in Practical Example 1. [0059] Next, this thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure. The thickness of the thermal interface material of this heat dissipation structure was measured to be 6 ⁇ in the same manner as in Practical Example 1. The heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.06 cm °C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition was prepared.
  • the viscosity of this thermosetting polymer composition was measured to be 23 Pa s in the same manner as in Practical Example 1.
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 4 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.08 cm 2 -°C/W in the same manner as in
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 8 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.06 cm 2,0 C/W in the same manner as in Practical Example 1.
  • thermosetting polymer composition was cured in the same manner as in Practical Example 1 to form a heat dissipation structure.
  • the thickness of the thermal interface material of this heat dissipation structure was measured to be 10 ⁇ in the same manner as in Practical Example 1.
  • the heat resistance of the thermal interface material of this heat dissipation structure was measured to be 0.05 cm 2 -°C/W in the same manner as in Practical Example 1.
  • the method of forming the thermal interface material of the present invention makes it possible to efficiently form a thermal interface material which efficiently transmits heat generated from an electronic part to a heat sink.
  • the method is therefore suitable as a method of forming a thermal interface material between a semiconductor element and heat radiation fins.

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
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  • Polymers & Plastics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract

La présente invention concerne un procédé de formation d'une matière d'interface thermique caractérisé par le durcissement d'une composition de polymère thermodurcissable par chauffage sous pression entre une pièce électronique et un dissipateur thermique, la composition de polymère thermodurcissable comprenant (A) un polymère thermodurcissable, (B) une poudre d'alliage à base de bismuth/étain qui fond à une température inférieure à la température de durcissement du composant (A) et a une dimension moyenne de particule de 1 à 100 μm, et (C) une poudre thermiquement conductrice grossièrement sphérique qui ne fond pas à la température de durcissement du composant (A) et a une dimension moyenne de particule de 0,1 à 50 μm. La matière d'interface thermique transmet de façon efficace la chaleur générée à partir d'une pièce électronique à un dissipateur thermique.
PCT/JP2013/066540 2012-06-18 2013-06-11 Procédé de formation d'une matière d'interface thermique et structure de dissipation thermique WO2013191116A1 (fr)

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JP2012137353A JP2014003152A (ja) 2012-06-18 2012-06-18 サーマルインターフェース材の形成方法および放熱構造体
JP2012-137353 2012-06-18

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3158582A4 (fr) * 2014-06-19 2018-02-28 Dow Corning Corporation Silicones à motifs formés par photoexposition pour intercalaire thermique d'axe z de niveau plaquette
US10155894B2 (en) 2014-07-07 2018-12-18 Honeywell International Inc. Thermal interface material with ion scavenger
US10174433B2 (en) 2013-12-05 2019-01-08 Honeywell International Inc. Stannous methanesulfonate solution with adjusted pH
US10287471B2 (en) 2014-12-05 2019-05-14 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
US10781349B2 (en) 2016-03-08 2020-09-22 Honeywell International Inc. Thermal interface material including crosslinker and multiple fillers
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
EP3299419B1 (fr) * 2015-05-22 2021-07-07 Momentive Performance Materials Japan LLC Composition thermoconductrice
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US11319412B2 (en) 2016-10-31 2022-05-03 Dow Toray Co., Ltd. Thermally conductive silicone compound
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
EP4013800A4 (fr) * 2020-10-28 2023-05-17 Dow Silicones Corporation Compositions de siloxane ramifié à fonction trialcoxy

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07207160A (ja) 1994-01-11 1995-08-08 Toshiba Silicone Co Ltd シリコーン組成物およびその製造方法
EP1319690A2 (fr) * 2001-12-11 2003-06-18 Shin-Etsu Chemical Co., Ltd. Composition de silicone conductrice de chaleur et structure de semiconducteur dissipateur de chaleur
US20030234074A1 (en) * 2002-06-25 2003-12-25 Bhagwagar Dorab Edul Thermal interface materials and methods for their preparation and use
US20050084691A1 (en) * 2003-10-07 2005-04-21 Shin-Etsu Chemical Co., Ltd. Curable organopolysiloxane composition and semiconductor device
JP2007051227A (ja) 2005-08-18 2007-03-01 Shin Etsu Chem Co Ltd 熱伝導性シリコーングリース組成物およびその硬化物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07207160A (ja) 1994-01-11 1995-08-08 Toshiba Silicone Co Ltd シリコーン組成物およびその製造方法
EP1319690A2 (fr) * 2001-12-11 2003-06-18 Shin-Etsu Chemical Co., Ltd. Composition de silicone conductrice de chaleur et structure de semiconducteur dissipateur de chaleur
JP2003176414A (ja) 2001-12-11 2003-06-24 Shin Etsu Chem Co Ltd 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体
US20030234074A1 (en) * 2002-06-25 2003-12-25 Bhagwagar Dorab Edul Thermal interface materials and methods for their preparation and use
JP2005530887A (ja) 2002-06-25 2005-10-13 ダウ・コーニング・コーポレイション サーマルインターフェース材料、並びにその製造方法及び使用
US20050084691A1 (en) * 2003-10-07 2005-04-21 Shin-Etsu Chemical Co., Ltd. Curable organopolysiloxane composition and semiconductor device
JP2005112961A (ja) 2003-10-07 2005-04-28 Shin Etsu Chem Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置
JP2007051227A (ja) 2005-08-18 2007-03-01 Shin Etsu Chem Co Ltd 熱伝導性シリコーングリース組成物およびその硬化物

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10174433B2 (en) 2013-12-05 2019-01-08 Honeywell International Inc. Stannous methanesulfonate solution with adjusted pH
EP3158582A4 (fr) * 2014-06-19 2018-02-28 Dow Corning Corporation Silicones à motifs formés par photoexposition pour intercalaire thermique d'axe z de niveau plaquette
US10428257B2 (en) 2014-07-07 2019-10-01 Honeywell International Inc. Thermal interface material with ion scavenger
US10155894B2 (en) 2014-07-07 2018-12-18 Honeywell International Inc. Thermal interface material with ion scavenger
US10287471B2 (en) 2014-12-05 2019-05-14 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
EP3299419B1 (fr) * 2015-05-22 2021-07-07 Momentive Performance Materials Japan LLC Composition thermoconductrice
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
US10781349B2 (en) 2016-03-08 2020-09-22 Honeywell International Inc. Thermal interface material including crosslinker and multiple fillers
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
US11319412B2 (en) 2016-10-31 2022-05-03 Dow Toray Co., Ltd. Thermally conductive silicone compound
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
EP4013800A4 (fr) * 2020-10-28 2023-05-17 Dow Silicones Corporation Compositions de siloxane ramifié à fonction trialcoxy

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