WO2013172081A1 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- WO2013172081A1 WO2013172081A1 PCT/JP2013/057003 JP2013057003W WO2013172081A1 WO 2013172081 A1 WO2013172081 A1 WO 2013172081A1 JP 2013057003 W JP2013057003 W JP 2013057003W WO 2013172081 A1 WO2013172081 A1 WO 2013172081A1
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- main surface
- semiconductor
- photodetecting element
- semiconductor photodetecting
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- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 239000000835 fiber Substances 0.000 claims abstract description 71
- 230000003287 optical effect Effects 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 claims description 51
- 238000003384 imaging method Methods 0.000 claims description 40
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 15
- 239000000945 filler Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 230000004308 accommodation Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/752—Multi-walled
Definitions
- the present invention relates to a solid-state imaging device.
- a solid-state imaging device includes a fiber optic plate having a light incident end face and a light exit end face, and a semiconductor photodetecting element in which the light incident face is optically coupled to the light exit end face of the fiber optic plate.
- a fiber optic plate having a light incident end face and a light exit end face
- a semiconductor photodetecting element in which the light incident face is optically coupled to the light exit end face of the fiber optic plate.
- solid-state imaging devices employing back-illuminated semiconductor photodetecting elements may have the following problems.
- the back-illuminated semiconductor photodetecting element has a first main surface and a second main surface that face each other.
- Back-illuminated semiconductor photodetectors are generally provided with a photosensitive region on the first main surface side, and the portion corresponding to the photosensitive region is thinned from the second main surface side, leaving the peripheral portion of the portion. Has been. For this reason, in a state where the fiber optical plate is disposed on the back-illuminated semiconductor photodetecting element, the light emitting end face of the fiber optical plate and the thinned portion of the semiconductor photodetecting element are thinned by the semiconductor photodetecting element. It is separated by the level difference formed by the part that has been turned into a part and the peripheral part.
- the resolution (spatial resolution) of the solid-state imaging device is lowered.
- An object of the present invention is to provide a solid-state imaging device capable of suppressing a reduction in resolution even when a back-illuminated semiconductor photodetecting element is employed.
- the present invention is a solid-state imaging device having a first main surface and a second main surface facing each other, a light sensitive region is provided on the first main surface side, and a portion corresponding to the light sensitive region is provided A back-illuminated semiconductor photodetecting element thinned from the second main surface side, leaving a peripheral portion of the portion, and a third main surface having a third main surface and a fourth main surface facing each other; And a fourth main surface and a package in which an accommodation space for accommodating the semiconductor light detection element is formed, a light incident end surface and a light emitting end surface, and the light emitting end surface is opposed to the second main surface.
- a protective member that is fixed to the semiconductor photodetecting element from the first main surface side and protects the thinned portion of the semiconductor photodetecting element.
- the end-side part protrudes outside the package from the third main surface, and The portion on the light emitting end face side of the rate corresponds to the first portion corresponding to the peripheral portion of the semiconductor photodetecting element, the thinned portion of the semiconductor photodetecting element, and toward the semiconductor photodetecting element rather than the first portion
- the height of the step formed by the first portion and the second portion of the fiber optic plate is configured by the thinned portion and the peripheral portion of the semiconductor photodetector element.
- the semiconductor photodetecting element and the fiber optic plate are lower than the height of the step, and the optically transparent resin with respect to the detected light filled between the light emitting end face and the thinned portion is used to
- the second portion of the fiber optic plate and the thinned portion of the semiconductor photodetecting element are fixed in a state where a part and the peripheral portion are in contact with each other and the second portion and the thinned portion are separated from each other. And optically through resin It is coupled.
- the portion on the light emitting end face side of the fiber optic plate corresponds to the first portion corresponding to the peripheral portion of the semiconductor photodetecting element, the thinned portion of the semiconductor photodetecting element, and is more semiconductor than the first portion. And a second portion protruding toward the light detection element. For this reason, in the state where the fiber optical plate is disposed in the back-illuminated semiconductor photodetecting element, the light emitting end face of the second portion of the fiber optical plate and the thinned portion of the semiconductor photodetecting element are brought close to each other. Yes.
- the height of the step formed by the first portion and the second portion of the fiber optic plate is set lower than the height of the step formed by the thinned portion and the peripheral portion of the semiconductor photodetecting element. .
- the semiconductor photodetecting element and the fiber optic plate are fixed in a state where the first portion and the peripheral portion are in contact with each other and the second portion is separated from the thinned portion.
- the thinned portion of the semiconductor light detection element and the fiber optical plate No contact with the second part. Therefore, it is possible to prevent the thinned portion of the semiconductor photodetecting element from being damaged due to contact of the fiber optic plate or the like.
- a protective member is fixed to the semiconductor light detection element from the first main surface side to protect the thinned portion of the semiconductor light detection element. Thereby, the thinned part in the semiconductor photodetecting element can be mechanically reinforced.
- the semiconductor light detection element and the fiber optical plate are fixed by a resin that is optically transparent to the light to be detected that is filled between the light emitting end face and the thinned portion. Since the resin for fixing the semiconductor optical detection element and the fiber optical plate is filled between the light output end face of the fiber optical plate and the thinned portion of the semiconductor optical detection element, the light output of the fiber optical plate Voids are unlikely to occur between the end face and the thinned portion of the semiconductor light detection element, in particular, between the second portion of the fiber optic plate and the thinned portion of the semiconductor light detection element. Therefore, scattering of the light emitted from the light emitting end face in the second portion of the fiber optical plate can be prevented.
- a wavelength selective filter is disposed on a surface of the second portion of the fiber optic plate facing the thinned portion of the semiconductor photodetecting element, and the semiconductor photodetecting element and the fiber optic plate are connected to the wavelength selective filter. And the thinned portion may be fixed in a separated state. In this case, even if the wavelength selective filter and the thinned portion of the semiconductor photodetecting element are brought close to each other, the thinned portion of the semiconductor photodetecting element and the wavelength selective filter do not contact each other. Therefore, it is possible to prevent any of the thinned portion of the semiconductor photodetecting element and the wavelength selection filter from being damaged due to contact of the wavelength selection filter or the like.
- the semiconductor photodetecting element may be fixed to the package via a pedestal.
- the semiconductor photodetection element can be fixed with high accuracy.
- the housing space may be further closed from the fourth main surface side and a lid member fixed to the protection member may be further provided, and the protection member and the lid member may be thermally coupled.
- heat generated in the semiconductor photodetecting element is dissipated through the protective member and the lid member. Therefore, heat dissipation can be improved.
- the protective member and the lid member may be fixed by an adhesive containing a resin and a filler made of a material having a higher thermal conductivity than the resin. In this case, heat dissipation can be further improved.
- FIG. 1 is a plan view showing a solid-state imaging device according to the present embodiment.
- FIG. 2 is a view for explaining a cross-sectional configuration along the line II-II in FIG.
- FIG. 3 is a diagram for explaining a cross-sectional configuration of the semiconductor photodetector element and the fiber optical plate.
- FIG. 4 is an exploded perspective view showing the configuration of the solid-state imaging device according to the present embodiment.
- FIG. 5 is a diagram for explaining a manufacturing process of the solid-state imaging device according to the present embodiment.
- FIG. 6 is a diagram for explaining the manufacturing process of the solid-state imaging device according to the present embodiment.
- FIG. 7 is a diagram for explaining the manufacturing process of the solid-state imaging device according to the present embodiment.
- FIG. 1 is a plan view showing a solid-state imaging device according to the present embodiment.
- FIG. 2 is a view for explaining a cross-sectional configuration along the line II-II in FIG.
- FIG. 3 is a diagram for explaining a cross-sectional configuration of the semiconductor photodetector element and the fiber optical plate.
- FIG. 4 is an exploded perspective view showing the configuration of the solid-state imaging device according to the present embodiment.
- the solid-state imaging device 1 includes a package 10, a back-illuminated semiconductor light detection element 20, a pedestal 30, a fiber optical plate 40, a protection member 50, and a lid member 60. .
- the solid-state imaging device 1 can be used for a radiographic image reading device for an imaging plate.
- the radiographic image readout device for an imaging plate irradiates the imaging plate with excitation light and detects light emitted from the imaging plate.
- the wavelength of the light (detected light) emitted from the imaging plate is different from the wavelength of the excitation light.
- the package 10 has a main surface 10a and a main surface 10b facing each other, and is made of a ceramic material.
- the package 10 is made of alumina.
- a hollow portion 11 extending in a predetermined direction in the package 10 is formed in the central region of the package 10.
- the package 10 has a substantially rectangular shape in plan view, and the hollow portion 11 extends in the long side direction of the package 10.
- the hollow part 11 is open to the main surface 10a and the main surface 10b.
- the opening of the main surface 10 a has a substantially rectangular shape in plan view and extends in the long side direction of the package 10.
- the hollow portion 11 functions as a housing space for housing the semiconductor light detection element 20.
- the package 10 is provided with a placement portion 13 for placing the semiconductor light detection element 20 so as to protrude into the hollow portion 11.
- the placement unit 13 includes a first plane 15 on which the semiconductor light detection element 20 is disposed, a second plane 16 on which electrode pads (not shown) are disposed, and a third plane 17 on which the lid member 60 is fixed. ,have.
- the first, second, and third planes 15, 16, and 17 are opposed to the main surface 10 a, and are stepped in the order of the third plane 17, the second plane 16, and the first plane 15 from the main surface 10 b side. Is formed. That is, the main surface 10b and the third plane 17 form a step, the third plane 17 and the second plane 16 form a step, and the second plane 16 and the first plane 15 form a step. .
- a plurality of electrode pins 19 for external connection are respectively arranged on both side surfaces of the package 10.
- the electrode pins 19 are electrically connected to corresponding electrode pads via wirings arranged in the package 10.
- the semiconductor photodetector 20 has a main surface 20a and a main surface 20b facing each other, and a photosensitive region 21 is provided on the main surface 20a side.
- the photosensitive region 21 generates a charge according to incident light.
- a BT (Back-illuminated Thinning) -CCD (Charge Coupled Device) is used as the semiconductor light detection element 20.
- the generated charge is transferred as a signal charge by the shift register, converted into a voltage corresponding to the signal charge, and output.
- the semiconductor photodetection element 20 performs charge transfer by a TDI (Time Delay Integration) operation.
- Each electrode pad (not shown) of the semiconductor photodetecting element 20 is electrically connected to a corresponding electrode pad of the package 10 via a bonding wire.
- a portion corresponding to the photosensitive region 21 is thinned from the main surface 20b side leaving a peripheral portion 23 of the portion. That is, a portion corresponding to the photosensitive region 21 is a thinned portion (thin portion) 25.
- the semiconductor photodetecting element 20 can be thinned as follows, for example. A silicon nitride film is deposited on the main surface 20b of the silicon substrate constituting the semiconductor photodetecting element 20, and the silicon nitride film is patterned into a desired shape by a photolithography process. A region corresponding to the peripheral portion 23 is covered with a silicon nitride film, and a portion corresponding to the photosensitive region 21 is exposed. Thereafter, the silicon substrate is etched with an etching solution (for example, KOH) while leaving a region covered with the silicon nitride film (region corresponding to the peripheral portion 23) thick.
- an etching solution for example, KOH
- the semiconductor light detection element 20 is mounted on the first plane 15 of the mounting portion 13 via the pedestal 30 and fixed to the mounting portion 13 (package 10) so that the main surface 20b side becomes a light incident surface. Yes.
- the semiconductor photodetecting element 20 is disposed in the package 10 so that the thin portion 25 of the semiconductor photodetecting element 20 faces the opening of the main surface 10a.
- the thin portion 25 extends in the long side direction of the opening of the main surface 10a corresponding to the opening of the main surface 10a.
- the base 30 is formed with a through hole corresponding to the opening of the main surface 10a.
- the pedestal 30 is made of a ceramic material whose thermal expansion coefficient in a predetermined temperature range is larger than that of the semiconductor photodetecting element 20 (silicon). In the present embodiment, the pedestal 30 is made of alumina.
- the pedestal 30 is fixed to the package 10 with an adhesive (not shown).
- the main surface 20b side of the peripheral portion 23 of the semiconductor photodetecting element 20 is fixed to the pedestal 30 with an adhesive (not shown).
- the fiber optical plate 40 has a light incident end surface 40a and a light emitting end surface 40b.
- the fiber optical plate 40 is disposed such that the light emitting end face 40b faces the main surface 20b of the semiconductor light detection element 20.
- the fiber optical plate 40 has a substantially rectangular shape in plan view, and the long side direction thereof coincides with the long side direction of the opening of the main surface 10a.
- the portion 41 on the light emitting end face 40b side of the fiber optical plate 40 includes a first portion 41a and a second portion 41b as shown in FIG.
- the first portion 41 a is located so as to correspond to the peripheral portion 23 of the semiconductor photodetecting element 20.
- the second portion 41b is positioned so as to correspond to the thin portion 25 of the semiconductor photodetecting element 20.
- the second portion 41b protrudes toward the semiconductor photodetecting element 20 rather than the first portion 41a. That is, a step is formed on the light emitting end face 40b by the first portion 41a and the second portion 41b.
- the height of the step formed by the first portion 41 a and the second portion 41 b of the fiber optic plate 40 is set lower than the height of the step formed by the thin portion 25 and the peripheral portion 23 of the semiconductor light detection element 20. ing.
- a wavelength selection filter 70 is disposed on the surface of the second portion 41b of the fiber optic plate 40 that faces the thin portion 25 of the semiconductor photodetector 20 (the light emitting end surface 40b of the second portion 41b).
- the wavelength selection filter 70 is, for example, a dielectric multilayer filter.
- the dielectric multilayer filter can be formed on the light emitting end face 40b of the second portion 41b of the fiber optical plate 40 by vapor deposition or the like.
- the radiographic image reading device of the imaging plate it is necessary to separate the excitation light and the detected light so that the excitation light applied to the imaging plate does not enter the semiconductor light detection element 20.
- the excitation light and the detected light are separated by the wavelength selection filter 70, and the detected light enters the semiconductor light detection element 20.
- the semiconductor light detection element 20 and the fiber optical plate 40 are fixed by a resin 45.
- the resin 45 is optically transparent to the light to be detected.
- the resin 45 is filled in the light emitting end face 40 b of the fiber optical plate 40 and the space between the wavelength selection filter 70 and the thin portion 25 of the semiconductor light detection element 20.
- the wavelength selection filter 70 (second portion 41 b of the fiber optical plate 40) and the thin portion 25 of the semiconductor light detection element 20 are optically coupled via the resin 45.
- a transparent silicone resin is used as the resin 45.
- the portion 43 on the light incident end face 40 a side of the fiber optical plate 40 protrudes from the main surface 10 a of the package 10 to the outside of the package 10.
- the fiber optic plate 40 is not directly fixed to the package 10, but is fixed to the package 10 via the semiconductor photodetecting element 20 and the pedestal 30. Therefore, a predetermined gap is formed between the fiber optic plate 40 and the package 10.
- the distance between the second portion 41 b of the fiber optic plate 40 and the thin portion 25 of the semiconductor photodetector 20 is set to be larger than the thickness of the wavelength selection filter 70. That is, the height of the step formed by the thin portion 25 and the peripheral portion 23 of the semiconductor photodetector 20 is the wavelength of the step formed by the first portion 41a and the second portion 41b of the fiber optical plate 40. It is set higher than the value obtained by adding the thickness of the selection filter 70. Therefore, the semiconductor photodetecting element 20 and the wavelength selection filter 70 are separated in a state where the first portion 41a and the peripheral portion 23 are in contact with each other.
- the protective member 50 is fixed to the semiconductor photodetector 20 from the main surface 20a side.
- the protection member 50 protects the thin portion 25 of the semiconductor light detection element 20.
- the protection member 50 has a substantially rectangular shape in plan view, and the long side direction is the longitudinal direction of the thin portion 25.
- the protection member 50 is made of, for example, a sapphire substrate.
- the protective member 50 is fixed to the semiconductor photodetecting element 20 with an adhesive (not shown).
- the lid member 60 closes the hollow portion 11 from the main surface 10b.
- the end of the lid member 60 is fixed to the third plane 17 of the placement unit 13.
- the lid member 60 is made of a ceramic material. In the present embodiment, the lid member 60 is made of alumina.
- the lid member 60 is fixed to the package 10 (third plane 17) with an adhesive (not shown).
- the lid member 60 is also fixed to the protection member 50. Thereby, the protection member 50 and the lid member 60 are thermally coupled.
- the lid member 60 is fixed to the protective member 50 with an adhesive 61.
- the adhesive 61 includes a resin (for example, an epoxy resin) and a filler (for example, alumina) made of a material having a higher thermal conductivity than the resin.
- FIGS. 5 to 7 are diagrams for explaining the manufacturing process of the solid-state imaging device according to the present embodiment.
- the package 10 and the pedestal 30 are prepared, and the pedestal 30 is fixed to the package 10 (first plane 15) with an adhesive 81 (see FIG. 5A).
- an adhesive 81 for example, an epoxy resin containing Ag powder as a filler is used.
- the prepared semiconductor photodetecting element 20 is fixed to the pedestal 30 with an adhesive 82 (see FIG. 5B).
- an adhesive 82 for example, an epoxy resin containing Ag powder as a filler is used.
- the surface fixed to the package 10 and the surface fixed to the semiconductor light detection element 20 are flattened by machining (for example, chemical mechanical polishing). Thereby, the mounting surface of the semiconductor photodetecting element 20 is appropriately defined.
- the corresponding electrode pad (not shown) of the semiconductor light detection element 20 and the electrode pad (not shown) of the package 10 are connected by wire bonding (see FIG. 6A).
- the prepared protective member 50 is fixed to the main surface 20a of the semiconductor photodetecting element 20 with an adhesive 83 (see FIG. 6B).
- an adhesive 83 for example, an epoxy resin is used as the adhesive 83.
- the adhesive 83 is cured, the temperature is raised to the predetermined temperature range described above. Thereby, due to the difference in thermal expansion coefficient between the semiconductor photodetecting element 20 and the pedestal 30, the thin portion 25 of the semiconductor photodetecting element 20 is flattened, and the protection member 50 is kept in the semiconductor state while the state is maintained. Fixed to the light detection element 20.
- the prepared lid member 60 is fixed to the protective member 50 and the package 10 (third plane 17) with adhesives 61 and 84 (see (a) of FIG. 7).
- the adhesive 61 for example, the above-described epoxy resin containing an alumina filler is used. Curing of the adhesive 61 is performed in a temperature range lower than the predetermined temperature range described above.
- an epoxy resin is used as the adhesive 84 that fixes the lid member 60 and the package 10.
- the prepared fiber optical plate 40 is fixed to the semiconductor photodetecting element 20 with a resin 45 (see FIG. 7B).
- a wavelength selection filter 70 is formed on the light emitting end face 40b of the second portion 41b.
- a transparent silicone resin is used as the resin 45. This silicone resin is cured at room temperature.
- the portion 41 on the light emitting end face 40b side of the fiber optical plate 40 includes the first portion 41a and the second portion 41b.
- a wavelength selection filter 70 is disposed on the light emitting end face 40b of the second portion 41b of the fiber optical plate 40. For this reason, in the state where the fiber optical plate 40 is disposed on the semiconductor light detection element 20, the wavelength selection filter 70 (the light emitting end face 40 b in the second portion 41 b) and the thin portion 25 of the semiconductor light detection element 20 are brought close to each other. Yes. Therefore, it is difficult for the light emitted from the wavelength selection filter 70 to be diffused before entering the semiconductor light detection element 20, and it is possible to suppress a decrease in the resolution (spatial resolution) of the solid-state imaging device 1.
- the height of the step formed by the first portion 41a and the second portion 41b of the fiber optical plate 40 is determined from the height of the step formed by the thin portion 25 and the peripheral portion 23 of the semiconductor photodetecting element 20. It is set lower than the value obtained by reducing the thickness of 70.
- the semiconductor light detection element 20 and the fiber optical plate 40 are fixed in a state where the first portion 41a and the peripheral portion 23 are in contact with each other and the wavelength selection filter 70 (second portion 41b) and the thin portion 25 are separated from each other. . Accordingly, even when the wavelength selective filter 70 and the thin portion 25 of the semiconductor photodetector 20 are brought close to each other, the thin portion 25 of the semiconductor photodetector 20 and the wavelength selective filter 70 do not come into contact with each other. Therefore, it is possible to prevent any of the thin portion 25 and the wavelength selection filter 70 of the semiconductor photodetector 20 from being damaged due to contact of the wavelength selection filter 70 or the like.
- the protective member 50 is fixed to the semiconductor light detection element 20 from the main surface 20a side, and protects the thin portion 25 of the semiconductor light detection element 20. Thereby, the thin part 25 of the semiconductor photodetector 20 can be mechanically reinforced. In a state where the protection member 50 is fixed to the semiconductor light detection element 20, the thinned portion 25 of the semiconductor light detection element 20 is kept flat. For this reason, it is suppressed that the space
- the semiconductor light detection element 20 and the fiber optical plate 40 are fixed by the resin 45 filled in the space between the light emitting end face 40b of the fiber optical plate 40 and the wavelength selection filter 70 and the thin portion 25 of the semiconductor light detection element 20.
- the resin 45 is filled between the light emitting end face 40b of the fiber optical plate 40 and the wavelength selective filter 70 and the thin portion 25 of the semiconductor light detecting element 20, the light emitting end face 40b of the fiber optical plate 40 and the semiconductor light are filled. Voids are unlikely to occur between the thin portion 25 of the detection element 20, particularly between the wavelength selective filter 70 and the thin portion 25. Therefore, scattering of light emitted from the wavelength selection filter 70 can be prevented.
- the semiconductor photodetecting element 20 is fixed to the package 10 via the pedestal 30. Thereby, the semiconductor photodetecting element 20 can be fixed to the package 10 with high accuracy.
- the lid member 60 that closes the hollow portion 11 from the main surface 10b is fixed to the protection member 50 and is thermally coupled to the protection member 50. Thereby, the heat which generate
- the protective member 50 and the lid member 60 are fixed by an adhesive 61 containing a resin and a filler made of a material having a higher thermal conductivity than the resin. Thereby, heat dissipation can be improved further.
- the solid-state imaging device 1 of the present embodiment can be used not only for a radiographic image reading device for an imaging plate but also for a spectroscopic device.
- the wavelength selection filter 70 does not need to be arranged.
- the height of the step formed by the first portion 41 a and the second portion 41 b of the fiber optic plate 40 is higher than the height of the step formed by the thin portion 25 and the peripheral portion 23 of the semiconductor light detection element 20. Should be set low. Thereby, it is possible to prevent the thin portion 25 of the semiconductor photodetecting element 20 from being damaged.
- the present invention can be used for a solid-state imaging device used for a radiographic image reading device for an imaging plate.
- SYMBOLS 1 Solid-state imaging device, 10 ... Package, 10a, 10b ... Main surface, 11 ... Hollow part, 20 ... Semiconductor light detection element, 20a, 20b ... Main surface, 21 ... Photosensitive area
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Abstract
Description
Claims (5)
- 固体撮像装置であって、
互いに対向する第一主面と第二主面とを有し、前記第一主面側に光感応領域が設けられると共に、前記光感応領域に対応する部分が該部分の周辺部分を残して前記第二主面側から薄化されている裏面入射型の半導体光検出素子と、
互いに対向する第三主面と第四主面とを有し、前記第三主面と前記第四主面とに開口し且つ前記半導体光検出素子を収容する収容空間が形成されたパッケージと、
光入射端面と光出射端面とを有し、前記光出射端面が前記第二主面と対向するように配置されたファイバ光学プレートと、
前記第一主面側から前記半導体光検出素子に固定され、前記半導体光検出素子の薄化されている部分を保護する保護部材と、を備え、
前記ファイバ光学プレートの前記光入射端面側の部分は、前記第三主面より前記パッケージの外側に突出し、
前記ファイバ光学プレートの前記光出射端面側の部分は、前記半導体光検出素子の前記周辺部分に対応する第一部分と、前記半導体光検出素子の薄化されている部分に対応し且つ前記第一部分よりも前記半導体光検出素子に向けて突出する第二部分と、を含み、
前記ファイバ光学プレートの前記第一部分と前記第二部分とで構成される段差の高さは、前記半導体光検出素子の薄化されている前記部分と前記周辺部分とで構成される段差の高さよりも低く、
前記半導体光検出素子と前記ファイバ光学プレートとは、前記光出射端面と薄化されている前記部分との間に充填された被検出光に対して光学的に透明な樹脂により、前記第一部分と前記周辺部分とが当接し且つ前記第二部分と薄化されている前記部分とが離れている状態で固定されており、
前記ファイバ光学プレートの前記第二部分と前記半導体光検出素子の薄化されている前記部分とは、前記樹脂を介して光学的に結合されている。 - 請求項1に記載の固体撮像装置であって、
前記ファイバ光学プレートの前記第二部分の、前記半導体光検出素子の薄化されている前記部分に対向する面には、波長選択フィルタが配置されており、
前記半導体光検出素子と前記ファイバ光学プレートとは、前記波長選択フィルタと薄化されている前記部分とが離れている状態で固定されている。 - 請求項1又は2に記載の固体撮像装置であって、
前記半導体光検出素子が、台座を介して前記パッケージに固定されている。 - 請求項1~3のいずれか一項に記載の固体撮像装置であって、
前記収容空間を前記第四主面側から閉塞し、前記保護部材に固定される蓋部材を更に備え、
前記保護部材と前記蓋部材とが、熱的に結合されている。 - 請求項4に記載の固体撮像装置であって、
前記保護部材と前記蓋部材とが、樹脂と該樹脂よりも熱伝導率が高い材料からなるフィラーとを含む接着剤により固定されている。
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KR1020147028037A KR102004016B1 (ko) | 2012-05-18 | 2013-03-13 | 고체 촬상 장치 |
CN201380026040.7A CN104303303B (zh) | 2012-05-18 | 2013-03-13 | 固体摄像装置 |
US14/401,224 US9401381B2 (en) | 2012-05-18 | 2013-03-13 | Solid-state image pickup device |
EP13790820.8A EP2851953B1 (en) | 2012-05-18 | 2013-03-13 | Solid-state image pickup device |
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JP2012-114331 | 2012-05-18 | ||
JP2012114331A JP5940887B2 (ja) | 2012-05-18 | 2012-05-18 | 固体撮像装置 |
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US (1) | US9401381B2 (ja) |
EP (1) | EP2851953B1 (ja) |
JP (1) | JP5940887B2 (ja) |
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2013
- 2013-03-13 US US14/401,224 patent/US9401381B2/en active Active
- 2013-03-13 KR KR1020147028037A patent/KR102004016B1/ko active IP Right Grant
- 2013-03-13 EP EP13790820.8A patent/EP2851953B1/en active Active
- 2013-03-13 WO PCT/JP2013/057003 patent/WO2013172081A1/ja active Application Filing
- 2013-03-13 CN CN201380026040.7A patent/CN104303303B/zh active Active
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US9401381B2 (en) | 2016-07-26 |
JP5940887B2 (ja) | 2016-06-29 |
EP2851953B1 (en) | 2016-11-16 |
US20150130004A1 (en) | 2015-05-14 |
CN104303303A (zh) | 2015-01-21 |
EP2851953A4 (en) | 2016-01-20 |
CN104303303B (zh) | 2017-04-12 |
KR20150022749A (ko) | 2015-03-04 |
KR102004016B1 (ko) | 2019-07-25 |
JP2013243197A (ja) | 2013-12-05 |
EP2851953A1 (en) | 2015-03-25 |
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