WO2013157435A1 - 粒子吸着プローブ - Google Patents
粒子吸着プローブ Download PDFInfo
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- WO2013157435A1 WO2013157435A1 PCT/JP2013/060664 JP2013060664W WO2013157435A1 WO 2013157435 A1 WO2013157435 A1 WO 2013157435A1 JP 2013060664 W JP2013060664 W JP 2013060664W WO 2013157435 A1 WO2013157435 A1 WO 2013157435A1
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- particles
- carbon nanotube
- carbon nanotubes
- particle adsorption
- adsorption probe
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/02—Burettes; Pipettes
- B01L3/0289—Apparatus for withdrawing or distributing predetermined quantities of fluid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/06—Fluid handling related problems
- B01L2200/0647—Handling flowable solids, e.g. microscopic beads, cells, particles
- B01L2200/0657—Pipetting powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0832—Geometry, shape and general structure cylindrical, tube shaped
- B01L2300/0838—Capillaries
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0896—Nanoscaled
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N2001/028—Sampling from a surface, swabbing, vaporising
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/2813—Producing thin layers of samples on a substrate, e.g. smearing, spinning-on
- G01N2001/2826—Collecting by adsorption or absorption
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
Definitions
- the present invention relates to a particle adsorption probe. More specifically, for example, the present invention relates to a particle adsorption probe that is preferably used for picking up fine particles scattered on the surface of an object to be analyzed and carrying them into an analysis apparatus for analysis and evaluation.
- a particle adsorption probe using a tungsten probe or a microknife as a sampling tool is generally used.
- a particle adsorption probe By using such a particle adsorption probe, foreign substances scattered on the surface of the member are picked up by the sampling tool and carried into the analyzer, and the composition and shape of the foreign substances are analyzed and evaluated (for example, patent documents). 1).
- An object of the present invention is a particle adsorption probe for adsorbing and picking up particles, and it is not necessary to apply physical stress when picking up particles, and particle size distribution without contaminating the surface of foreign matter when picking up particles It is an object of the present invention to provide a novel particle adsorption probe capable of selectively picking up particles having a specific particle size from a wide group of particles, and performing analysis and evaluation directly in the analyzer after the particles are picked up.
- the particle adsorption probe of the present invention has a carbon nanotube aggregate including a plurality of carbon nanotubes.
- the carbon nanotube aggregate is provided on a shaft-like substrate.
- the carbon nanotube has a plurality of layers, the distribution width of the number distribution of the carbon nanotubes is 10 or more, and the relative frequency of the mode value of the number distribution of the carbon nanotubes is 25% or less. .
- the carbon nanotube has a plurality of layers, the mode value of the number distribution of the carbon nanotubes is present in 10 or less layers, and the relative frequency of the mode value is 30% or more. .
- the particle adsorption probe of the present invention selectively adsorbs particles having a diameter of 200 ⁇ m or less.
- a particle adsorption probe for adsorbing and picking up particles it is not necessary to apply physical stress when picking up the particles, and particle size distribution without contaminating the surface of the foreign matter when picking up the particles
- a novel particle adsorption probe capable of selectively picking up particles having a specific particle size from a wide group of particles and performing analysis and evaluation in the analyzer as it is after the particles are picked up.
- FIG. 6 is a photographic view taken with a scanning electron microscope (SEM) showing a state in which particles are adsorbed on the particle adsorption probe obtained in Example 3.
- SEM scanning electron microscope
- the particle adsorption probe of the present invention has a carbon nanotube aggregate including a plurality of carbon nanotubes.
- the particle adsorption probe of the present invention preferably has a carbon nanotube aggregate including a plurality of carbon nanotubes at least at the tip portion.
- the particle adsorption probe of the present invention has such an aggregate of carbon nanotubes, so there is no need to apply physical stress when picking up the particles, and particle size distribution without contaminating the surface of foreign matter when picking up the particles.
- particles having a specific particle diameter can be selectively picked up from a wide particle group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the particle adsorption probe of the present invention may be composed of only a carbon nanotube aggregate including a plurality of carbon nanotubes, or the carbon nanotube aggregate including a plurality of carbon nanotubes is provided on an axial base material. It may be a configuration.
- the shaft-shaped substrate means a shaft-shaped substrate, and may be paraphrased as, for example, a shaft, a support column, or a metal column.
- FIG. 1 is a schematic cross-sectional view of an example of a particle adsorption probe in a preferred embodiment of the present invention.
- the particle adsorption probe 1000 of the present invention includes only a carbon nanotube aggregate 100 including a plurality of carbon nanotubes 10.
- the plurality of carbon nanotubes 10 are each oriented in the direction of the length L and constitute a bundle of carbon nanotube aggregates 100.
- FIG. 2 is a schematic cross-sectional view of another example of a particle adsorption probe in a preferred embodiment of the present invention.
- a carbon nanotube aggregate 100 including a plurality of carbon nanotubes 10 is provided on a shaft-like substrate 20.
- the plurality of carbon nanotubes 10 are each oriented in the direction of the length L and constitute a bundle of carbon nanotube aggregates 100.
- one ends 10 a of the plurality of carbon nanotubes 10 are fixed to the shaft-like base material 20.
- the plurality of carbon nanotubes 10 are preferably oriented in a substantially vertical direction with respect to the shaft-shaped substrate 20.
- the “substantially perpendicular direction” means that the angle with respect to the cross-sectional surface 20a of the shaft-shaped substrate 20 is preferably in the range of 90 ° ⁇ 20 °, more preferably in the range of 90 ° ⁇ 15 °. More preferably, it is within the range of 90 ° ⁇ 10 °, and particularly preferably within the range of 90 ° ⁇ 5 °.
- the particle adsorption probe of the present invention can selectively pick up particles having a specific particle size from a group of particles having a wide particle size distribution, and preferably selectively adsorbs particles having a diameter of 200 ⁇ m or less.
- the length of the carbon nanotube aggregate 100 is preferably 0.1 ⁇ m to 5000 ⁇ m, more preferably 1 ⁇ m to 2000 ⁇ m, still more preferably 10 ⁇ m to 1000 ⁇ m, and particularly preferably 30 ⁇ m. ⁇ 500 ⁇ m.
- the particle adsorption probe of the present invention can more selectively pick up particles having a specific particle size from a group of particles having a wide particle size distribution, and plastic deformation is prevented. Since it is reduced, the picked-up particles can be stably held.
- particles having a diameter of 200 ⁇ m or less are preferably selectively adsorbed.
- the diameter of the carbon nanotube aggregate 100 is preferably 0.1 ⁇ m to 2000 ⁇ m, more preferably 1 ⁇ m to 1000 ⁇ m, still more preferably 10 ⁇ m to 500 ⁇ m, and particularly preferably 20 ⁇ m to 300 ⁇ m.
- the particle adsorption probe of the present invention can more selectively pick up particles having a specific particle size from a group of particles having a wide particle size distribution, thereby reducing plastic deformation. Therefore, the picked up particles can be stably held.
- particles having a diameter of 200 ⁇ m or less are preferably selectively adsorbed.
- the cross section thereof has any appropriate shape.
- the cross section may be substantially circular, elliptical, n-gonal (n is an integer of 3 or more), and the like.
- the specific surface area and density of the carbon nanotube can be set to any appropriate value.
- any appropriate material can be adopted depending on the purpose.
- examples of such a material include ruby and sapphire, and preferred examples include conductive materials such as SUS and tungsten carbide.
- any appropriate size can be adopted depending on the purpose.
- Such a size is preferably such that the area of the cross-section side surface is larger than the area calculated from the diameter of the carbon nanotube aggregate.
- arbitrary appropriate length can be employ
- the particle adsorption probe of the present invention has a configuration in which the aggregate of carbon nanotubes is provided on an axial substrate as shown in FIG. 2, as a method of fixing the carbon nanotube to the axial substrate, Any suitable method may be employed. Examples of such fixing methods include a method of bonding using a paste, a method of sticking and fixing using a double-sided tape, a method of using a substrate used for manufacturing a carbon nanotube aggregate as a shaft base material, and the like. Can be mentioned.
- a method of fixing using a conductive material is preferable for preventing charging, and specifically, for example, And a method of bonding using a metal paste such as an Ag paste, a method of sticking and fixing using a conductive double-sided tape, and the like.
- the aggregate of carbon nanotubes included in the particle adsorption probe of the present invention can take the following two preferred embodiments.
- One preferred embodiment of the aggregate of carbon nanotubes of the particle adsorption probe of the present invention (hereinafter sometimes referred to as the first preferred embodiment) includes a plurality of carbon nanotubes, and the carbon nanotubes have a plurality of layers. And the distribution width of the carbon nanotube layer number distribution is 10 or more, and the relative frequency of the mode value of the wall number distribution is 25% or less.
- the distribution width of the number distribution of carbon nanotubes is 10 or more, preferably 10 to 30 layers, more preferably 10 to 25 layers, and further preferably 10 to 20 layers.
- the “distribution width” of the number distribution of carbon nanotubes refers to the difference between the maximum number and the minimum number of carbon nanotube layers.
- the carbon nanotubes When the distribution width of the number distribution of carbon nanotubes is within the above range, the carbon nanotubes can have excellent mechanical properties and a high specific surface area, and the carbon nanotubes exhibit excellent adhesive properties. It can be a carbon nanotube aggregate. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the number of layers and the number distribution of the carbon nanotubes may be measured by any appropriate apparatus. Preferably, it is measured by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, at least 10, preferably 20 or more carbon nanotubes may be taken out from the aggregate of carbon nanotubes and measured by SEM or TEM to evaluate the number of layers and the number distribution of the layers.
- SEM scanning electron microscope
- TEM transmission electron microscope
- the maximum number of the carbon nanotubes is preferably 5 to 30 layers, more preferably 10 to 30 layers, still more preferably 15 to 30 layers, and particularly preferably 15 layers to 30 layers. There are 25 layers.
- the minimum number of the carbon nanotube layers is preferably 1 to 10 layers, more preferably 1 to 5 layers.
- the carbon nanotubes can have more excellent mechanical properties and a high specific surface area. It can be an aggregate of carbon nanotubes that exhibits more excellent adhesive properties. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of the foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the relative frequency of the mode value of the layer number distribution is 25% or less, preferably 1% to 25%, more preferably 5% to 25%, and further preferably 10% to 25%. Particularly preferably, it is 15% to 25%.
- the carbon nanotube can have excellent mechanical properties and a high specific surface area, and further, the carbon nanotube has excellent adhesive properties. It can become the carbon nanotube aggregate which shows. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of the foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the mode value of the layer number distribution is preferably from 2 to 10 layers, and more preferably from 3 to 10 layers.
- the carbon nanotubes can have excellent mechanical properties and a high specific surface area, and the carbon nanotubes can exhibit excellent adhesion properties. It can be a nanotube aggregate. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of the foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- Another preferred embodiment of the aggregate of carbon nanotubes included in the particle adsorption probe of the present invention includes a plurality of carbon nanotubes, and the carbon nanotubes include a plurality of carbon nanotubes.
- the mode number distribution of the carbon nanotubes has a mode value of 10 or less, and the relative frequency of the mode value is 30% or more.
- the distribution width of the number distribution of the carbon nanotubes is preferably 9 or less, more preferably 1 to 9 layers, still more preferably 2 to 8 layers, and particularly preferably 3 to 8 layers. It is.
- the “distribution width” of the number distribution of carbon nanotubes refers to the difference between the maximum number and the minimum number of carbon nanotube layers.
- the carbon nanotubes When the distribution width of the number distribution of the carbon nanotubes is within the above range, the carbon nanotubes can have excellent mechanical properties and a high specific surface area, and further, the carbon nanotubes exhibit excellent adhesive properties. It can be a carbon nanotube aggregate. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of the foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the number of layers and the number distribution of the carbon nanotubes may be measured by any appropriate apparatus. Preferably, it is measured by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, at least 10, preferably 20 or more carbon nanotubes may be taken out from the aggregate of carbon nanotubes and measured by SEM or TEM to evaluate the number of layers and the number distribution of the layers.
- SEM scanning electron microscope
- TEM transmission electron microscope
- the maximum number of the carbon nanotubes is preferably 1 to 20 layers, more preferably 2 to 15 layers, and further preferably 3 to 10 layers.
- the minimum number of the carbon nanotube layers is preferably 1 to 10 layers, more preferably 1 to 5 layers.
- the carbon nanotubes can have more excellent mechanical properties and a high specific surface area. It can be an aggregate of carbon nanotubes that exhibits more excellent adhesive properties. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the relative frequency of the mode value of the layer number distribution is 30% or more, preferably 30% to 100%, more preferably 30% to 90%, and further preferably 30% to 80%. Particularly preferably, it is 30% to 70%.
- the carbon nanotube can have excellent mechanical properties and a high specific surface area, and further, the carbon nanotube has excellent adhesive properties. It can become the carbon nanotube aggregate which shows. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of the foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- the mode value of the layer number distribution is present in 10 layers or less, preferably in 1 layer to 10 layers, more preferably in 2 layers to 8 layers, More preferably, it exists in 2 to 6 layers.
- the carbon nanotubes can have excellent mechanical properties and a high specific surface area. It can be a carbon nanotube aggregate exhibiting characteristics. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- a catalyst layer is formed on a smooth substrate, and the carbon source is filled in a state where the catalyst is activated by heat, plasma, or the like.
- a method of producing a carbon nanotube aggregate oriented substantially vertically from the substrate by a chemical vapor deposition (CVD method) method for growing carbon nanotubes.
- CVD method chemical vapor deposition
- any appropriate substrate can be adopted as the substrate.
- the material which has smoothness and the high temperature heat resistance which can endure manufacture of a carbon nanotube is mentioned.
- examples of such materials include quartz glass, silicon (such as a silicon wafer), and a metal plate such as aluminum.
- the substrate can be used as it is as an axial substrate that can be included in the particle adsorption probe of the present invention.
- any suitable device can be adopted as a device for producing the carbon nanotube aggregate included in the particle adsorption probe of the present invention.
- a thermal CVD apparatus as shown in FIG. 3, a hot wall type configured by surrounding a cylindrical reaction vessel with a resistance heating type electric tubular furnace, and the like can be mentioned.
- a heat-resistant quartz tube is preferably used as the reaction vessel.
- any suitable catalyst can be used as the catalyst (catalyst layer material) that can be used to produce the carbon nanotube aggregate of the particle adsorption probe of the present invention.
- metal catalysts such as iron, cobalt, nickel, gold, platinum, silver, copper, are mentioned.
- an alumina / hydrophilic film may be provided between the substrate and the catalyst layer as necessary.
- any appropriate method can be adopted as a method for producing the alumina / hydrophilic film.
- it can be obtained by forming a SiO 2 film on a substrate, depositing Al, and then oxidizing it by raising the temperature to 450 ° C.
- Al 2 O 3 interacts with the SiO 2 film hydrophilic, different Al 2 O 3 surface particle diameters than those deposited Al 2 O 3 directly formed.
- Al is deposited and heated to 450 ° C. and oxidized without forming a hydrophilic film on the substrate, Al 2 O 3 surfaces having different particle diameters may not be formed easily.
- a hydrophilic film is prepared on a substrate and Al 2 O 3 is directly deposited, it is difficult to form Al 2 O 3 surfaces having different particle diameters.
- the thickness of the catalyst layer that can be used in the production of the carbon nanotube aggregate included in the particle adsorption probe of the present invention is preferably 0.01 nm to 20 nm, more preferably 0.1 nm to 10 nm in order to form fine particles.
- the carbon nanotube aggregate can have excellent mechanical properties and a high specific surface area.
- the aggregate of carbon nanotubes can exhibit excellent adhesive properties. Therefore, the particle adsorption probe using such an aggregate of carbon nanotubes does not need to apply physical stress when picking up the particles, and does not contaminate the surface of foreign matter when picking up the particles. Particles having a specific particle size can be more selectively picked up from the group, and analysis evaluation can be performed in the analyzer as it is after the particles are picked up.
- Any appropriate method can be adopted as a method for forming the catalyst layer.
- a method of depositing a metal catalyst by EB (electron beam), sputtering, or the like, a method of applying a suspension of metal catalyst fine particles on a substrate, and the like can be mentioned.
- the catalyst layer may be processed into a pattern having any appropriate diameter by photolithography after the formation of the catalyst layer. By such photolithography processing, finally, a carbon nanotube aggregate having a desired diameter can be manufactured.
- any appropriate carbon source can be used as the carbon source that can be used for producing the carbon nanotube aggregate included in the particle adsorption probe of the present invention.
- hydrocarbons such as methane, ethylene, acetylene, and benzene
- alcohols such as methanol and ethanol
- any appropriate temperature can be adopted as the production temperature in the production of the carbon nanotube aggregate of the particle adsorption probe of the present invention.
- the temperature is preferably 400 ° C to 1000 ° C, more preferably 500 ° C to 900 ° C, and further preferably 600 ° C to 800 ° C. .
- ⁇ Evaluation of the number and distribution of carbon nanotubes in a carbon nanotube aggregate The number of carbon nanotube layers and the number distribution of carbon nanotubes in the aggregate of carbon nanotubes were measured by a scanning electron microscope (SEM) and / or a transmission electron microscope (TEM). From the obtained carbon nanotube aggregate, at least 10 or more, preferably 20 or more carbon nanotubes were observed by SEM and / or TEM, the number of layers of each carbon nanotube was examined, and a layer number distribution was created.
- SEM scanning electron microscope
- TEM transmission electron microscope
- FGB-1500 particle size 20 ⁇ m or less
- FGB-1000 particle size 30 ⁇ m or less
- FGB-320 particle size 38 ⁇ m-53 ⁇ m
- FGB-120 particle size 125 ⁇ m-150 ⁇ m
- FGB-60 particle size 250 ⁇ m-355 ⁇ m
- Example 1 An Al thin film (5 nm thick) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this Al thin film, an Fe thin film (thickness 0.35 nm) was further vapor-deposited by a sputtering apparatus (manufactured by ULVAC, RFS-200). Thereafter, the film was patterned to a diameter of 30 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 0.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (1) in which the carbon nanotubes were oriented in the length direction was obtained.
- the carbon nanotube aggregate (1) had a length of 10 ⁇ m and a diameter of 30 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (1), the mode value was present in one layer, and the relative frequency was 61%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (1) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 2 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness 1 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, it was patterned to a diameter of 20 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 2.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (2) in which the carbon nanotubes were oriented in the length direction was obtained.
- the length of the carbon nanotube aggregate (2) was 30 ⁇ m and the diameter was 20 ⁇ m.
- the mode value was present in two layers, and the relative frequency was 75%.
- a silver paste Dotite D362, manufactured by Fujikura Kasei Co., Ltd.
- the obtained carbon nanotube aggregate (2) was adhered to create a particle adsorption probe. .
- the evaluation results are shown in Table 1.
- Example 3 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness 1 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, the film was patterned to a diameter of 60 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 2.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (3) in which the carbon nanotubes were oriented in the length direction was obtained.
- the carbon nanotube aggregate (3) had a length of 30 ⁇ m and a diameter of 60 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (3), the mode value was present in two layers, and the relative frequency was 75%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (3) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1. Moreover, the photograph figure by the photograph figure of the scanning electron microscope (SEM) which shows the state by which particle
- SEM scanning electron microscope
- Example 4 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness 1 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, the film was patterned to a diameter of 150 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 2.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (4) in which the carbon nanotubes were oriented in the length direction was obtained.
- the carbon nanotube aggregate (4) had a length of 30 ⁇ m and a diameter of 150 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (4), the mode value was present in two layers, and the relative frequency was 75%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (4) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 5 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness: 2 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, it was patterned to a diameter of 20 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) is filled in the tube, and left for 4 minutes to grow carbon nanotubes on the substrate. As a result, an aggregate of carbon nanotubes (5) in which is oriented in the length direction was obtained.
- a mixed gas of helium / hydrogen 90/50 sccm maintained at 600 ppm in water
- the carbon nanotube aggregate (5) had a length of 50 ⁇ m and a diameter of 20 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (5), the mode value was present in three layers, and the relative frequency was 72%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (5) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 6 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness: 2 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, the film was patterned to a diameter of 60 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) is filled in the tube, and left for 4 minutes to grow carbon nanotubes on the substrate. As a result, an aggregate of carbon nanotubes (6) in which is oriented in the length direction was obtained.
- a mixed gas of helium / hydrogen 90/50 sccm maintained at 600 ppm in water
- the carbon nanotube aggregate (6) had a length of 50 ⁇ m and a diameter of 60 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (6), the mode value was present in three layers, and the relative frequency was 72%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (6) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 7 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness: 2 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, the film was patterned to a diameter of 150 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) is filled in the tube, and left for 4 minutes to grow carbon nanotubes on the substrate. As a result, an aggregate of carbon nanotubes (7) in which is oriented in the length direction was obtained.
- a mixed gas of helium / hydrogen 90/50 sccm maintained at 600 ppm in water
- the carbon nanotube aggregate (7) had a length of 50 ⁇ m and a diameter of 150 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (7), the mode value was present in three layers, and the relative frequency was 72%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (7) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 8 An Al thin film (thickness 10 nm) was formed on a silicon substrate (made by KST, wafer with thermal oxide film, thickness 1000 ⁇ m) using a vacuum deposition apparatus (made by JEOL, JEE-4X Vacuum Evaporator), and then oxidized at 450 ° C. for 1 hour. Treated. In this way, an Al 2 O 3 film was formed on the silicon substrate. On this Al 2 O 3 film, an Fe thin film (thickness 2 nm) was further deposited by a sputtering apparatus (manufactured by ULVAC, RFS-200) to form a catalyst layer. Thereafter, it was patterned to a diameter of 200 ⁇ m by photolithography.
- the obtained silicon substrate with a catalyst layer was cut and placed in a 30 mm ⁇ quartz tube, and a helium / hydrogen (120/80 sccm) mixed gas maintained at a moisture content of 350 ppm was allowed to flow into the quartz tube for 30 minutes. Was replaced. Thereafter, the inside of the tube was gradually raised to 765 ° C. in 35 minutes using an electric tubular furnace, and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (105/80/15 sccm, moisture content 350 ppm) and left for 20 minutes to grow carbon nanotubes on the substrate.
- the carbon nanotube aggregate (8) had a length of 400 ⁇ m and a diameter of 200 ⁇ m.
- the distribution width of the wall number distribution is 17 layers (4 to 20 layers), and the mode value exists in the 4th and 8th layers.
- the frequencies were 20% and 20%, respectively.
- Example 9 An Al thin film (5 nm thick) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this Al thin film, an Fe thin film (thickness 0.35 nm) was further vapor-deposited by a sputtering apparatus (manufactured by ULVAC, RFS-200). Thereafter, it was patterned to a diameter of 10 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 0.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (9) in which the carbon nanotubes were oriented in the length direction was obtained.
- the length of the carbon nanotube aggregate (9) was 10 ⁇ m and the diameter was 10 ⁇ m.
- the mode value was present in one layer, and the relative frequency was 61%.
- a silver paste Dotite D362, manufactured by Fujikura Kasei Co., Ltd.
- the obtained carbon nanotube aggregate (9) was adhered to create a particle adsorption probe. .
- the evaluation results are shown in Table 1.
- Example 10 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness 1 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, it was patterned to a diameter of 10 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., the tube was filled with a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) and left for 2.5 minutes to grow carbon nanotubes on the substrate. A carbon nanotube aggregate (10) in which the carbon nanotubes were oriented in the length direction was obtained.
- the carbon nanotube aggregate (10) had a length of 30 ⁇ m and a diameter of 10 ⁇ m. In the distribution of the number of carbon nanotubes provided in the carbon nanotube aggregate (10), the mode value was present in two layers, and the relative frequency was 75%. Using a silver paste (Dotite D362, manufactured by Fujikura Kasei Co., Ltd.) on a smooth cross section of a tungsten needle (diameter 0.7 mm), the obtained carbon nanotube aggregate (10) was adhered to create a particle adsorption probe. . The evaluation results are shown in Table 1.
- Example 11 An alumina thin film (thickness 20 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering apparatus (manufactured by ULVAC, RFS-200). On this alumina thin film, an Fe thin film (thickness: 2 nm) was further vapor-deposited by a sputtering apparatus (ULVAC, RFS-200). Thereafter, it was patterned to a diameter of 10 ⁇ m by photolithography.
- this substrate was placed in a 30 mm ⁇ quartz tube, and a mixed gas of helium / hydrogen (90/50 sccm) maintained at 600 ppm in water was allowed to flow through the quartz tube for 30 minutes to replace the inside of the tube. Thereafter, the inside of the tube was heated to 765 ° C. using an electric tubular furnace and stabilized at 765 ° C. While maintaining the temperature at 765 ° C., a mixed gas of helium / hydrogen / ethylene (85/50/5 sccm, moisture content 600 ppm) is filled in the tube, and left for 4 minutes to grow carbon nanotubes on the substrate. As a result, a carbon nanotube aggregate (11) in which is oriented in the length direction was obtained.
- the length of the carbon nanotube aggregate (11) was 50 ⁇ m and the diameter was 10 ⁇ m.
- the mode value was present in three layers, and the relative frequency was 72%.
- a silver paste Dotite D362, manufactured by Fujikura Kasei Co., Ltd.
- the obtained carbon nanotube aggregate (11) was adhered to create a particle adsorption probe. .
- the evaluation results are shown in Table 1.
- the particle adsorption probes obtained in the examples have a wide particle size distribution without applying physical stress when picking up the particles and without contaminating the surface of the foreign matter when picking up the particles. It can be seen that particles having a specific particle size can be selectively picked up from the particle group.
- Example 12 The particle adsorption probe obtained in Example 3 was able to maintain the state shown in the scanning electron microscope (SEM) photograph of FIG. 4 in the analyzer as it was after picking up the particles. Thus, it was found that the particle adsorption probe obtained in the example can be analyzed and evaluated in the analyzer as it is after the particles are picked up.
- SEM scanning electron microscope
- the particle adsorption probe of the present invention is suitably used, for example, in analysis applications and the like for picking up fine particles scattered on the surface of an object to be analyzed and bringing them into an analyzer for analysis evaluation.
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Abstract
Description
本発明の粒子吸着プローブは、複数のカーボンナノチューブを備えるカーボンナノチューブ集合体を有する。本発明の粒子吸着プローブは、複数のカーボンナノチューブを備えるカーボンナノチューブ集合体を、好ましくは、少なくとも先端部分に有する。本発明の粒子吸着プローブは、このようなカーボンナノチューブ集合体を有することにより、粒子をピックアップする際に物理的応力を加える必要がなく、粒子のピックアップにあたって異物表面を汚染することなく、粒径分布の広い粒子群から特定の粒径の粒子を選択的にピックアップでき、粒子のピックアップ後にそのまま分析装置内で分析評価を行うことができる。
本発明の粒子吸着プローブが有するカーボンナノチューブ集合体は、下記のような2つの好ましい実施形態を採り得る。
本発明の粒子吸着プローブが有するカーボンナノチューブ集合体の好ましい実施形態の1つ(以下、第1の好ましい実施形態と称することがある)は、複数のカーボンナノチューブを備え、該カーボンナノチューブが複数層を有し、該カーボンナノチューブの層数分布の分布幅が10層以上であり、該層数分布の最頻値の相対頻度が25%以下である。
本発明の粒子吸着プローブが有するカーボンナノチューブ集合体の好ましい実施形態の別の1つ(以下、第2の好ましい実施形態と称することがある)は、複数のカーボンナノチューブを備え、該カーボンナノチューブが複数層を有し、該カーボンナノチューブの層数分布の最頻値が層数10層以下に存在し、該最頻値の相対頻度が30%以上である。
本発明の粒子吸着プローブが有するカーボンナノチューブ集合体の製造方法としては、任意の適切な方法を採用し得る。
カーボンナノチューブ集合体の長さおよび直径は、走査型電子顕微鏡(SEM)によって測定した。
カーボンナノチューブ集合体におけるカーボンナノチューブの層数および層数分布は、走査型電子顕微鏡(SEM)および/または透過電子顕微鏡(TEM)によって測定した。得られたカーボンナノチューブ集合体の中から少なくとも10本以上、好ましくは20本以上のカーボンナノチューブをSEMおよび/またはTEMにより観察し、各カーボンナノチューブの層数を調べ、層数分布を作成した。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、カーボンナノチューブ集合体を接着し、粒子吸着プローブを作成した。
得られた粒子吸着プローブを、サンプリング機器のアクシスプロ((株)マイクロサポート製)に固定し、下記に示す種々の粒径のガラスビーズ(フジガラスビーズ((株)不二製作所製)に接触させ、応力をかけずに、粒子の吸着状態を調べ、粒子が吸着された場合を○、粒子が吸着されていない場合を×とした。
FGB-1500:粒径20μm以下
FGB-1000:粒径30μm以下
FGB- 320:粒径38μm-53μm
FGB- 120:粒径125μm-150μm
FGB- 60:粒径250μm-355μm
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、Al薄膜(厚み5nm)を形成した。このAl薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み0.35nm)を蒸着した。その後、フォトリソグラフィ加工により、直径30μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、0.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(1)を得た。
カーボンナノチューブ集合体(1)の長さは10μmであり、直径は30μmであった。
カーボンナノチューブ集合体(1)が備えるカーボンナノチューブの層数分布において、最頻値は1層に存在し、相対頻度は61%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(1)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み1nm)を蒸着した。その後、フォトリソグラフィ加工により、直径20μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、2.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(2)を得た。
カーボンナノチューブ集合体(2)の長さは30μmであり、直径は20μmであった。
カーボンナノチューブ集合体(2)が備えるカーボンナノチューブの層数分布において、最頻値は2層に存在し、相対頻度は75%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(2)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み1nm)を蒸着した。その後、フォトリソグラフィ加工により、直径60μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、2.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(3)を得た。
カーボンナノチューブ集合体(3)の長さは30μmであり、直径は60μmであった。
カーボンナノチューブ集合体(3)が備えるカーボンナノチューブの層数分布において、最頻値は2層に存在し、相対頻度は75%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(3)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
また、得られた粒子吸着プローブに粒子が吸着された状態を示す走査型電子顕微鏡(SEM)の写真図による写真図を図4に示した。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み1nm)を蒸着した。その後、フォトリソグラフィ加工により、直径150μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、2.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(4)を得た。
カーボンナノチューブ集合体(4)の長さは30μmであり、直径は150μmであった。
カーボンナノチューブ集合体(4)が備えるカーボンナノチューブの層数分布において、最頻値は2層に存在し、相対頻度は75%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(4)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み2nm)を蒸着した。その後、フォトリソグラフィ加工により、直径20μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、4分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(5)を得た。
カーボンナノチューブ集合体(5)の長さは50μmであり、直径は20μmであった。
カーボンナノチューブ集合体(5)が備えるカーボンナノチューブの層数分布において、最頻値は3層に存在し、相対頻度は72%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(5)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み2nm)を蒸着した。その後、フォトリソグラフィ加工により、直径60μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、4分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(6)を得た。
カーボンナノチューブ集合体(6)の長さは50μmであり、直径は60μmであった。
カーボンナノチューブ集合体(6)が備えるカーボンナノチューブの層数分布において、最頻値は3層に存在し、相対頻度は72%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(6)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み2nm)を蒸着した。その後、フォトリソグラフィ加工により、直径150μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、4分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(7)を得た。
カーボンナノチューブ集合体(7)の長さは50μmであり、直径は150μmであった。
カーボンナノチューブ集合体(7)が備えるカーボンナノチューブの層数分布において、最頻値は3層に存在し、相対頻度は72%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(7)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
シリコン基板(KST製、熱酸化膜付ウェハ、厚み1000μm)上に、真空蒸着装置(JEOL製、JEE-4X Vacuum Evaporator)により、Al薄膜(厚み10nm)を形成した後、450℃で1時間酸化処理を施した。このようにして、シリコン基板上にAl2O3膜を形成した。このAl2O3膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み2nm)を蒸着させて触媒層を形成した。その後、フォトリソグラフィ加工により、直径200μmにパターン化した。
次に、得られた触媒層付シリコン基板をカットして、30mmφの石英管内に載置し、水分350ppmに保ったヘリウム/水素(120/80sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで35分間で段階的に昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(105/80/15sccm、水分率350ppm)混合ガスを管内に充填させ、20分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(8)を得た。
カーボンナノチューブ集合体(8)の長さは400μmであり、直径は200μmであった。
カーボンナノチューブ集合体(8)が備えるカーボンナノチューブの層数分布において、層数分布の分布幅は17層(4層~20層)であり、最頻値は4層と8層に存在し、相対頻度はそれぞれ20%と20%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(8)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、Al薄膜(厚み5nm)を形成した。このAl薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み0.35nm)を蒸着した。その後、フォトリソグラフィ加工により、直径10μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、0.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(9)を得た。
カーボンナノチューブ集合体(9)の長さは10μmであり、直径は10μmであった。
カーボンナノチューブ集合体(9)が備えるカーボンナノチューブの層数分布において、最頻値は1層に存在し、相対頻度は61%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(9)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み1nm)を蒸着した。その後、フォトリソグラフィ加工により、直径10μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、2.5分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(10)を得た。
カーボンナノチューブ集合体(10)の長さは30μmであり、直径は10μmであった。
カーボンナノチューブ集合体(10)が備えるカーボンナノチューブの層数分布において、最頻値は2層に存在し、相対頻度は75%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(10)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
基板としてのシリコンウェハ(シリコンテクノロジー製)上に、スパッタ装置(ULVAC製、RFS-200)により、アルミナ薄膜(厚み20nm)を形成した。このアルミナ薄膜上に、さらにスパッタ装置(ULVAC製、RFS-200)にてFe薄膜(厚み2nm)を蒸着した。その後、フォトリソグラフィ加工により、直径10μmにパターン化した。
その後、この基板を30mmφの石英管内に載置し、水分600ppmに保ったヘリウム/水素(90/50sccm)混合ガスを石英管内に30分間流して、管内を置換した。その後、電気管状炉を用いて管内を765℃まで昇温させ、765℃にて安定させた。765℃にて温度を保持したまま、ヘリウム/水素/エチレン(85/50/5sccm、水分率600ppm)混合ガスを管内に充填させ、4分間放置してカーボンナノチューブを基板上に成長させ、カーボンナノチューブが長さ方向に配向しているカーボンナノチューブ集合体(11)を得た。
カーボンナノチューブ集合体(11)の長さは50μmであり、直径は10μmであった。
カーボンナノチューブ集合体(11)が備えるカーボンナノチューブの層数分布において、最頻値は3層に存在し、相対頻度は72%であった。
タングステン針(直径0.7mm)の平滑断面に、銀ペースト(ドータイトD362、藤倉化成(株)製)を用いて、得られたカーボンナノチューブ集合体(11)を接着し、粒子吸着プローブを作成した。
評価結果を表1に示す。
タングステンプローブ(TP-010、(株)マイクロサポート製)を粒子吸着プローブとして用い、評価を行った。
評価結果を表1に示す。
タングステンプローブ(TP-030、(株)マイクロサポート製)を粒子吸着プローブとして用い、評価を行った。
評価結果を表1に示す。
実施例3で得られた粒子吸着プローブは、粒子のピックアップ後に、そのまま分析装置内において図4の走査型電子顕微鏡(SEM)の写真図に示す状態を維持することができた。
このことにより、実施例で得られた粒子吸着プローブは、粒子のピックアップ後にそのまま分析装置内で分析評価を行うことができることが判った。
100 カーボンナノチューブ集合体
10 カーボンナノチューブ
10a カーボンナノチューブの片端
20 軸状基材
20a 軸状基材の断面側表面
Claims (5)
- 複数のカーボンナノチューブを備えるカーボンナノチューブ集合体を有する、粒子吸着プローブ。
- 軸状基材上に前記カーボンナノチューブ集合体が設けられている、請求項1に記載の粒子吸着プローブ。
- 前記カーボンナノチューブが複数層を有し、該カーボンナノチューブの層数分布の分布幅が10層以上であり、該層数分布の最頻値の相対頻度が25%以下である、請求項1または2に記載の粒子吸着プローブ。
- 前記カーボンナノチューブが複数層を有し、該カーボンナノチューブの層数分布の最頻値が層数10層以下に存在し、該最頻値の相対頻度が30%以上である、請求項1または2に記載の粒子吸着プローブ。
- 直径200μm以下の粒子を選択的に吸着する、請求項1から4までのいずれかに記載の粒子吸着プローブ。
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JP2014202688A (ja) * | 2013-04-09 | 2014-10-27 | 日東電工株式会社 | 微粒子含有液体ピックアップ用マイクロプローブ |
JP2014202687A (ja) * | 2013-04-09 | 2014-10-27 | 日東電工株式会社 | 液体薄膜ピックアップ用マイクロプローブ |
JP2014215272A (ja) * | 2013-04-30 | 2014-11-17 | 日東電工株式会社 | 微粒子分離部材 |
JP2016043091A (ja) * | 2014-08-25 | 2016-04-04 | 日東電工株式会社 | クリーニング部材 |
EP3082148A1 (en) * | 2015-04-15 | 2016-10-19 | FEI Company | Method of manipulating a sample in an evacuated chamber of a charged particle apparatus |
JP6549995B2 (ja) * | 2016-01-15 | 2019-07-24 | 日東電工株式会社 | 載置部材 |
JP6616194B2 (ja) * | 2016-01-15 | 2019-12-04 | 日東電工株式会社 | 載置部材 |
CN106441557A (zh) * | 2016-08-17 | 2017-02-22 | 中国电子科技集团公司第四十研究所 | 一种多用途太赫兹光功率探头 |
JP7315913B2 (ja) * | 2019-03-01 | 2023-07-27 | 東芝テック株式会社 | 吸着装置及び分析装置 |
JP2020197544A (ja) * | 2020-09-17 | 2020-12-10 | 国立大学法人鳥取大学 | 吸着装置及び分析装置 |
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- 2013-04-09 EP EP13778067.2A patent/EP2839933A4/en not_active Withdrawn
- 2013-04-09 KR KR1020147028871A patent/KR20150000887A/ko not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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EP2839933A1 (en) | 2015-02-25 |
JP5948125B2 (ja) | 2016-07-06 |
KR20150000887A (ko) | 2015-01-05 |
EP2839933A8 (en) | 2015-06-10 |
JP2013221915A (ja) | 2013-10-28 |
US9606041B2 (en) | 2017-03-28 |
US20150040690A1 (en) | 2015-02-12 |
CN104271320A (zh) | 2015-01-07 |
EP2839933A4 (en) | 2015-11-18 |
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