WO2013150804A1 - Procédé de gravure sèche - Google Patents

Procédé de gravure sèche Download PDF

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Publication number
WO2013150804A1
WO2013150804A1 PCT/JP2013/002388 JP2013002388W WO2013150804A1 WO 2013150804 A1 WO2013150804 A1 WO 2013150804A1 JP 2013002388 W JP2013002388 W JP 2013002388W WO 2013150804 A1 WO2013150804 A1 WO 2013150804A1
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Prior art keywords
gas
etching
silicon substrate
dry etching
processing chamber
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PCT/JP2013/002388
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English (en)
Japanese (ja)
Inventor
宗之 佐藤
竹井　日出夫
池田　智
洋介 坂尾
文人 大竹
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株式会社アルバック
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Priority to KR1020147031268A priority Critical patent/KR101615682B1/ko
Priority to CN201380016736.1A priority patent/CN104205308B/zh
Priority to JP2014509065A priority patent/JP5901744B2/ja
Publication of WO2013150804A1 publication Critical patent/WO2013150804A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a dry etching method for forming a texture structure on a silicon substrate surface, and more specifically, a texture that exhibits a high light scattering containment effect on the surface of a silicon substrate in a manufacturing process of a crystalline solar cell. It relates to what is used to form the structure.
  • Patent Document 1 in order to remove a damaged layer on the surface of a silicon substrate generated at the time of slicing in a processing chamber of a dry etching apparatus, for example, oxygen gas and SF 6 gas for removing a damaged layer are predetermined. Introduced at a flow rate, the stage holding the silicon substrate is powered from a high frequency power source, and the silicon substrate surface is dry etched to remove the damaged layer. Subsequently, for example, oxygen gas, texture forming Cl 2 gas and NF 3 gas are introduced into the processing chamber, power is supplied from a high-frequency power source to the stage, and the silicon substrate surface is dry etched to remove the damaged layer. A texture structure is formed on the surface of the silicon substrate.
  • the texture structure when the texture structure is formed on the surface of the silicon substrate by dry etching, reaction products generated during the etching are deposited on the surface of the silicon substrate after the etching.
  • the silicon surface is repeatedly concave and convex, but has sharp edges with sharp peaks and valleys (that is, a saw blade shape when the cross-sectional shape is viewed).
  • an antireflection film is formed on the silicon substrate surface in a later step using, for example, a vacuum film forming apparatus, the film is not efficiently formed on the top or valley, resulting in poor coverage, etc. Problems arise.
  • the present invention effectively demonstrates the effect of confining the silicon substrate with a textured structure that effectively exhibits the light scattering containment effect and can be formed with good coverage even when a predetermined thin film is formed in a subsequent process.
  • An object of the present invention is to provide a low-cost dry etching method that can be manufactured well.
  • the present invention provides a dry etching method for forming a texture structure on a silicon substrate surface, wherein a fluorine-containing gas and a halogen-containing gas are placed in a film forming chamber under reduced pressure where the silicon substrate is disposed.
  • a texture structure is formed on the silicon substrate surface in the first step. That is, for example, a fluorine-containing gas such as CF 4 (flow rate ratio 20 to 60%) and a halogen-containing gas such as a halogen gas such as Cl 2 or a hydrogen halide gas such as HBr (flow rate ratio 25 to 70%) Then, a first etching gas containing oxygen gas (flow rate ratio: 10 to 40%) is introduced into the processing chamber, and, for example, high-frequency power is supplied to the substrate stage holding the silicon substrate in the processing chamber. As a result, plasma is formed in the processing chamber, and active species and ion species in the plasma enter the surface of the silicon substrate and etching proceeds. At this time, silicon oxide, hydrocarbon fluoride, or the like deposited on the substrate surface serves as a mask, so that the silicon surface is etched into an uneven shape and roughened to form a texture structure.
  • a fluorine-containing gas such as CF 4 (flow rate ratio 20 to 60%)
  • reaction products such as silicon oxide and hydrocarbon fluoride deposited on the silicon substrate surface during the etching in the first step are removed.
  • the cleaning process is performed in a vacuum atmosphere. That is, for example, a second etching gas made of a fluorine-containing gas such as CF 4 is introduced into the processing chamber, and high-frequency power is supplied to the substrate stage that holds the silicon substrate in the processing chamber. Thereby, the reaction product deposited on the silicon substrate surface by the active species and ion species in the plasma is removed.
  • the wall surface (including the deposition prevention plate) of the vacuum chamber that defines the processing chamber is also cleaned.
  • the etching gas may contain oxygen gas.
  • the texture structure can be efficiently manufactured on the silicon substrate by performing the formation of the texture structure and the cleaning of the silicon substrate surface after the first step by dry etching.
  • wet etching since wet etching is not used, high productivity can be achieved, and cost can be reduced.
  • the method further includes a third step of further etching the silicon substrate surface by introducing 3 etching gas and supplying electric power for discharge.
  • the round processing is continuously performed on the texture structure formed on the silicon substrate surface. That is, for example, a third etching gas containing a fluorine-containing gas such as CF 4 (flow rate ratio of 40 to 95%) and oxygen gas (flow rate ratio of 5 to 60%) is introduced into the processing chamber.
  • High frequency power is applied to the substrate stage that holds the silicon substrate.
  • active species and ion species in the plasma are incident on the silicon substrate surface and etching proceeds, and the top and valley portions in the texture structure of the silicon substrate surface formed in the first step are rounded.
  • the oxygen gas is added in order to obtain an optimum shape by controlling the etching rate by adjusting the flow rate of the oxygen gas.
  • the introduction of the halogen-containing gas and the oxygen gas in the first etching gas into the processing chamber is stopped without stopping the discharge power supply in the same processing chamber. It is preferable to perform the first step and the second step continuously by switching from the etching gas to the second etching gas. Also, in the same processing chamber, without stopping the supply of electric power for discharge, the introduction of oxygen gas is resumed, and the second etching gas is switched to the third etching gas to change the second and third steps. Is preferably carried out continuously. By performing batch dry etching in the same processing chamber, it is possible to further improve productivity and reduce costs.
  • a fluorine-containing gas or a halogen-containing gas is used as a main component, and oxygen gas is added thereto.
  • the etching gas is further introduced, and a third step of further etching the silicon substrate surface by supplying electric power for discharge is further included, and the silicon substrate surface etched in the third step is further etched in the second step.
  • the texture structure can be efficiently manufactured on the silicon substrate by performing dry etching each of the formation of the texture structure, the round processing on the texture structure, and the cleaning of the surface of the silicon substrate after the third step.
  • wet etching since wet etching is not used, high productivity can be achieved, and cost can be reduced.
  • the introduction of either the fluorine-containing gas or the halogen-containing gas in the first etching gas into the processing chamber is stopped without stopping the discharge power supply in the same processing chamber. Then, it is preferable to perform the first step and the third step continuously by switching from the first etching gas to the third etching gas. In addition, it is preferable that the third process and the second process are continuously performed by switching from the third etching gas to the second etching gas without stopping the discharge power supply in the same processing chamber. . By performing batch dry etching in the same processing chamber, it is possible to further improve productivity and reduce costs.
  • the introduction of oxygen gas in the first step and the third step is performed by a single gas introduction system having a flow rate control means, the oxygen flow rate ratio in the first step is set in the range of 10 to 40%, and in the third step It is preferable to control the flow rate control means so that the oxygen flow rate ratio is in the range of 5 to 60%.
  • the oxygen flow rate ratio in the first step the flow rate ratio of the oxygen gas in the first etching gas in the total flow rate of the first etching gas introduced into the processing chamber
  • the oxygen flow rate ratio in the third step is outside the above range, the etching rate is too fast or too slow and the etching shape cannot be controlled.
  • the schematic diagram which shows the structure of the dry etching apparatus which enforces the dry etching method of embodiment of this invention.
  • (A) And (b) is the SEM photograph of the board
  • (A) to (c) are SEM photographs of the substrate obtained in Example 2 of the present invention.
  • the object to be processed is a single crystal or polycrystalline silicon substrate (hereinafter simply referred to as a substrate W) used for a crystalline solar cell, and a texture structure is formed on the surface thereof.
  • a substrate W a single crystal or polycrystalline silicon substrate
  • a form of dry etching method will be described.
  • the structure of a crystalline solar cell is well-known, detailed description is abbreviate
  • FIG. 1 shows a dry etching apparatus EM that can perform the dry etching method of the present embodiment.
  • a direction from a shower plate, which will be described later, to the substrate W will be described as a lower side, and a direction from the substrate W to the shower plate will be described as an upper side.
  • the dry etching apparatus EM includes a vacuum chamber 1 that can be held under reduced pressure to a predetermined degree of vacuum via a vacuum exhaust unit 11 including a rotary pump, a turbo molecular pump, and the like, and defines a film forming chamber 12.
  • a substrate stage 2 is provided in the lower space of the film forming chamber 12.
  • An output 31 from the high frequency power source 3 is connected to the substrate stage 2.
  • a shower plate 4 is provided above the film forming chamber 12 so as to face the substrate stage 2.
  • the shower plate 4 is held at the lower end of an annular support wall 13 protruding from the inner wall surface of the vacuum chamber 1, and a gas introduction for introducing an etching gas into a space 41 defined by the support wall 13 and the shower plate 4.
  • a system 5 is provided.
  • the gas introduction system 5 includes a merging gas pipe 51 communicating with the space 41.
  • the merging gas pipe 51 includes gas pipes 53a, 53b in which flow control means 52a, 52b, 52c having a closing function such as a mass flow controller are interposed. 53c are connected to each other and communicated with the first to third gas sources 54a, 54b, 54c, respectively.
  • the flow rate can be controlled for each gas type and introduced into the processing chamber 12.
  • the gas of the first gas source 54a contains fluorine such as CF 4 , NF 3 , SF 6 , and CxHyFz so that the first step, the second step, and the third step can be continuously performed.
  • the gas of the second gas source 54b is made of a halogen-containing gas such as a halogen gas such as Cl 2 or a hydrogen halide gas such as HBr, and the gas of the second gas source 54b is made of oxygen gas.
  • a halogen-containing gas such as a halogen gas such as Cl 2 or a hydrogen halide gas such as HBr
  • oxygen gas oxygen gas
  • the substrate W is transferred by a vacuum robot (not shown) and is held on the substrate stage 2.
  • the first etching gas is supplied from the first to third gas sources 54a, 54b, 54c through the flow rate control valves 52a to 52c of the gas introduction system 5 from the space 41 to the shower plate 4. And introduced into the processing chamber 12.
  • the first etching gas includes CF 4 as a fluorine-containing gas, Cl 2 as a halogen-containing gas, and oxygen gas, and the flow rate of the fluorine-containing gas with respect to the total flow rate of the gas introduced into the processing chamber 12
  • the ratio is in the range of 20-60%
  • the flow rate ratio of the halogen-containing gas is in the range of 25-70%
  • the flow ratio of the oxygen gas is in the range of 10-40% (in this case, the pressure in the processing chamber 12 under reduced pressure) 30 to 250 Pa).
  • the flow ratio of each gas can be appropriately set within the above range according to the size of the processing chamber 12 and other process conditions (the same applies to the third step).
  • discharge power is supplied to the substrate stage 2 via the high frequency power source 3.
  • the input power in this case is appropriately set so that the power density is 0.5 to 1.8 W / cm 2 .
  • a texture structure is formed on the surface of the substrate W in the first step. That is, plasma is formed in the processing chamber 12, and active species and ion species in the plasma are incident on the surface of the substrate W and etching proceeds. At this time, oxygen deposited on the surface of the substrate serves as a mask, so that the silicon surface is etched into a concavo-convex shape and roughened to form a texture structure.
  • a cleaning process is continuously performed as a second step. That is, without stopping the supply of electric power for discharge from the high frequency power source 3, the flow rate control means 52b is closed to stop the introduction of Cl 2 as a halogen-containing gas into the processing chamber 12, and the flow rate control means. The valve 52c is closed to stop the introduction of the oxygen gas into the processing chamber 12, thereby switching from the first etching gas to the second etching gas.
  • reaction products also referred to as “etching residues”
  • the inner wall surface (including the deposition prevention plate) of the vacuum chamber 1 that defines the processing chamber 12 is also cleaned.
  • the third step is continuously performed. That is, without stopping the supply of electric power for discharge from the high-frequency power source 3, the flow rate control means 52c is opened to restart the introduction of the oxygen gas into the processing chamber 12, and from the second etching gas to the third etching gas. Switch to etching gas.
  • the flow rate ratio of the fluorine-containing gas to the total flow rate of the gas introduced into the processing chamber 12 is in the range of 40 to 95%, and the flow rate ratio of the oxygen gas is in the range of 5 to 60% (in this case, under reduced pressure).
  • the pressure in the processing chamber 12 is 20 to 150 Pa).
  • this third step a round process is performed on the texture structure formed on the surface of the substrate W. That is, the top and valleys in the texture structure of the silicon substrate surface formed in the first step are rounded by the active species and ion species in the plasma incident on the surface of the substrate W.
  • the oxygen gas is added in order to obtain an optimum shape by controlling the etching rate by adjusting the flow rate of the oxygen gas.
  • the second step may be performed again.
  • the texture structure in the first step is controlled. Formation and the round process in a 3rd process can be performed efficiently. If the oxygen flow rate ratio in the first step (the flow rate ratio of oxygen gas in the total flow rate of the first etching gas introduced into the processing chamber) is outside the above range, there is a problem that a texture structure cannot be formed. When the oxygen flow rate ratio in the third step (the flow rate ratio of oxygen gas in the total flow rate of the third etching gas introduced into the processing chamber 12) is outside the above range, the etching rate is too fast or too slow, and etching is performed. There is a problem that the shape cannot be controlled.
  • the etching method of the second embodiment is the same as the etching method of the first embodiment except that the order of the second step and the third step is reversed.
  • the first process, the third process, and the second process are successively performed in this order in the same processing chamber by switching the etching gas without stopping the supply of the discharge power from the high-frequency power source 3. It is preferable. Since the conditions such as the gas flow rate in each step are the same as those in the first embodiment, detailed description thereof is omitted here. According to this embodiment, since the cleaning is performed last, it is possible to reliably prevent the round textured structure from being covered with the reaction product.
  • reaction product formed on the substrate surface in the first step contains silicon, this reaction product is also etched during the round processing in the third step, so that a desired surface state is obtained in the third step.
  • the processing time may be longer than that of the first embodiment.
  • either one of the first embodiment and the second embodiment may be appropriately selected in consideration of processes before and after the dry etching in the solar cell production line, various conditions of the dry etching, and the like. Good.
  • the light scattering confinement effect is exhibited and a predetermined thin film is formed in the subsequent process. Even in this case, it is possible to efficiently manufacture a texture structure on the silicon substrate so that the film can be formed with good coverage.
  • wet etching is not used, high productivity can be achieved and cost can be reduced.
  • the step of removing the damaged layer of the substrate W that occurs during slicing can be performed in the same processing chamber 12 prior to the first step. In this case, since the dry etching conditions described above can be used, detailed description thereof is omitted here.
  • the first etching gas is CF 4 , Cl 2, and oxygen gas as the conditions of the first step, and its CF 4 : Cl 2 :
  • the flow rate of oxygen gas is 300: 1000: 200 sccm (the flow rate ratio at this time is 20: 67: 13%)
  • the pressure of the processing chamber 12 during etching is 60 Pa
  • the input power from the high-frequency power source 3 is 2 kW
  • the treatment was performed for 90 seconds.
  • the second etching gas is CF 4
  • the flow rate of CF 4 is 300 sccm
  • the pressure in the processing chamber 12 during etching is 60 Pa
  • the input power from the high-frequency power source 3 is 1.5 kW.
  • the cleaning process was performed for 10 seconds.
  • the third etching gas is CF 4 and oxygen gas
  • the flow rate of CF 4 : oxygen gas is 300: 50 sccm (the flow ratio at this time is 86: 14%).
  • the chamber pressure was 60 Pa
  • the input power from the high-frequency power source 3 was 1.0 kW
  • the treatment was performed for 10 seconds.
  • FIG. 2A shows an SEM photograph of the substrate immediately after the second step is performed
  • FIG. 2B shows an SEM photograph of the substrate immediately after the third step. According to this, it turns out that a texture structure can be efficiently manufactured in a silicon substrate by dry etching.
  • a polycrystalline silicon substrate obtained by a known method was used as the substrate, and the first step, the third step, and the second step were sequentially performed in this order.
  • the first etching gas is CF 4 , Cl 2, and oxygen gas
  • the flow rate ratio of CF 4 : Cl 2 : oxygen gas is 60: 30: 10%.
  • the pressure in the processing chamber 12 was in the range of 20 to 150 Pa, the input power from the high frequency power source 3 was 29.5 kW, and the processing time was 75 seconds.
  • the third etching gas is CF 4 and oxygen gas
  • the flow rate ratio of CF 4 : oxygen gas is 90: 10%
  • the pressure of the processing chamber during etching is in the range of 20 to 150 Pa.
  • the input power from the high frequency power source 3 was 15 kW
  • the processing time was 15 seconds.
  • the second etching gas is CF 4, and introducing the CF 4 in the third step the same flow rate, the pressure of the processing chamber 12 at the time of etching in the range of above 20 ⁇ 150 Pa,
  • the input power from the high-frequency power source 3 was 15 kW, and the processing time was 10 seconds.
  • 3A shows the substrate immediately after the first step
  • FIG. 3B shows the substrate immediately after the third step
  • 3C shows the substrate immediately after the second step. SEM photographs are shown respectively. According to this, the substrate surface is entirely covered with the reaction product after the first step, and the top and valleys of the texture structure are rounded after the second step, and the reaction product (lighted white in the photograph) is formed on the top. However, after the third step, the top reaction product was completely removed, and it was found that the texture structure can be efficiently produced on the silicon substrate by dry etching.
  • the dry etching apparatus EM capable of performing the dry etching method of the present invention has been described by taking the case where power is supplied to the substrate stage 2 as an example, but is not limited thereto, and inductively coupled discharge is performed.
  • the dry etching method of the present invention such as the dry etching apparatus used, can be widely applied to other types of dry etching apparatuses.
  • the first step, the second step, and the third step are performed in a single dry etching processing apparatus EM.
  • this can be performed separately, and further, the halogen-containing gas is added in the second step.
  • the fluorine-containing gas may be stopped.
  • the fluorine-containing gas, the halogen-containing gas, and the oxygen gas are used as separate gas sources.
  • the mixed gas of the fluorine-containing gas and the oxygen gas, and the mixed gas of the halogen-containing gas and the oxygen gas are used. It is good also as a gas source.
  • the case where the oxygen gas is stopped in the second process has been described as an example.
  • the meteor control means 52c is controlled to reduce the introduction amount of the oxygen gas in the second process rather than the first process. Good.
  • the flow rate ratio of the halogen-containing gas incorporated in the total flow rate of the gas introduced into the processing chamber 12 is set in the range of 60 to 90%, and the flow rate ratio of the oxygen gas is set in the range of 10 to 40%.
  • the pressure in the lower processing chamber 12 is 40 to 150 Pa).
  • EM dry etching apparatus, 12 ... processing chamber, 2 ... substrate stage, 3 ... high frequency power supply, 4 ... shower plate, 5 ... gas introduction system, 52a to 52c ... mass flow controller (flow rate control means), 53a to 53c ... gas pipe 54a to 54c (respectively for fluorine-containing gas, halogen-containing gas and oxygen gas), gas source, W ... substrate (silicon substrate).

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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Abstract

La présente invention concerne un procédé de gravure sèche à faible coût, capable de produire efficacement un substrat de silicium dont la structure de texture, de manière rentable, fait preuve d'un effet d'endiguement de diffusion de lumière et permet la formation d'un film avec une bonne couverture dans les cas de formation d'un film mince prédéterminé dans une étape suivante. Ce procédé de gravure sèche comprend les étapes suivantes : une première étape consistant à introduire un premier gaz de gravure, qui contient un gaz contenant du fluor et un gaz contenant de l'halogène, dans une chambre de formation de film (12) sous une pression réduite, à disposer un substrat de silicium (W) dans ladite chambre de formation de film, et à graver la surface du substrat de silicium en envoyant de la puissance électrique pour une décharge ; et une seconde étape consistant à introduire un second gaz de gravure qui contient un gaz contenant du fluor dans la chambre de formation de film sous une pression réduite, à disposer le substrat de silicium qui a été gravé lors de la première étape dans ladite chambre de formation de film, et à graver en outre la surface du substrat de silicium en envoyant de la puissance électrique pour une décharge.
PCT/JP2013/002388 2012-04-06 2013-04-08 Procédé de gravure sèche WO2013150804A1 (fr)

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KR1020147031268A KR101615682B1 (ko) 2012-04-06 2013-04-08 건식 에칭 방법
CN201380016736.1A CN104205308B (zh) 2012-04-06 2013-04-08 干蚀刻方法
JP2014509065A JP5901744B2 (ja) 2012-04-06 2013-04-08 ドライエッチング方法

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JP2012087027 2012-04-06
JP2012-087027 2012-04-06

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JP7349861B2 (ja) * 2019-09-24 2023-09-25 東京エレクトロン株式会社 エッチング方法、ダメージ層の除去方法、および記憶媒体

Citations (4)

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JP2002076404A (ja) * 2000-08-31 2002-03-15 Kyocera Corp シリコン基板の粗面化法
JP2010034155A (ja) * 2008-07-25 2010-02-12 Ulvac Japan Ltd テクスチャー形成方法及び真空処理装置
JP2010034156A (ja) * 2008-07-25 2010-02-12 Ulvac Japan Ltd テクスチャー形成方法及び真空処理装置
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

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CN101800264B (zh) * 2010-02-20 2012-01-18 山东力诺太阳能电力股份有限公司 一种晶体硅太阳能电池干法刻蚀制绒工艺
JP5773777B2 (ja) * 2011-06-24 2015-09-02 株式会社アルバック ドライエッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076404A (ja) * 2000-08-31 2002-03-15 Kyocera Corp シリコン基板の粗面化法
JP2010034155A (ja) * 2008-07-25 2010-02-12 Ulvac Japan Ltd テクスチャー形成方法及び真空処理装置
JP2010034156A (ja) * 2008-07-25 2010-02-12 Ulvac Japan Ltd テクスチャー形成方法及び真空処理装置
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

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CN104205308A (zh) 2014-12-10
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JPWO2013150804A1 (ja) 2015-12-17
KR101615682B1 (ko) 2016-04-26

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