WO2013137435A1 - Corps fluorescent, son procédé de fabrication ainsi que dispositif luminescent - Google Patents

Corps fluorescent, son procédé de fabrication ainsi que dispositif luminescent Download PDF

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WO2013137435A1
WO2013137435A1 PCT/JP2013/057406 JP2013057406W WO2013137435A1 WO 2013137435 A1 WO2013137435 A1 WO 2013137435A1 JP 2013057406 W JP2013057406 W JP 2013057406W WO 2013137435 A1 WO2013137435 A1 WO 2013137435A1
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phosphor
light
light emitting
emitting device
raw material
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PCT/JP2013/057406
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English (en)
Japanese (ja)
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大地 碓井
康博 白川
博文 竹村
石井　努
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株式会社東芝
東芝マテリアル株式会社
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Priority to KR1020147022229A priority Critical patent/KR20140121432A/ko
Publication of WO2013137435A1 publication Critical patent/WO2013137435A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • Embodiments of the present invention relate to a phosphor that emits red light, a method for manufacturing the phosphor, and a light-emitting device.
  • the phosphor powder is used, for example, in a light-emitting device such as a light-emitting diode (LED).
  • the light emitting device includes, for example, a semiconductor light emitting element that is arranged on a substrate and emits light of a predetermined color, and a phosphor that emits visible light when excited by light such as ultraviolet light and blue light emitted from the semiconductor light emitting element.
  • the semiconductor light emitting element of the light emitting device for example, GaN, InGaN, AlGaN, InGaAlP or the like is used.
  • the phosphor of the phosphor powder include a blue phosphor, a green phosphor, and a yellow phosphor that are excited by light emitted from the semiconductor light emitting element and emit blue light, green light, yellow light, and red light, respectively.
  • a phosphor, a red phosphor or the like is used.
  • the light emitting device can adjust the color of the emitted light by including various phosphor powders such as a green phosphor in the sealing resin. That is, by using a combination of a semiconductor light emitting element and a phosphor powder that absorbs light emitted from the semiconductor light emitting element and emits light in a predetermined wavelength region, the light emitted from the semiconductor light emitting element and the phosphor powder are used. It becomes possible to emit light in the visible light region and white light by the action of the light emitted from.
  • a phosphor a phosphor having a europium activated sialon (Si—Al—O—N) structure containing strontium (Sr sialon phosphor) is known.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a phosphor having a Sr sialon structure with high luminous efficiency, a method for producing the phosphor, and a light emitting device.
  • the luminance of the light emitting device using the Sr sialon phosphor is high if the shape of the particles of the Sr sialon phosphor having a specific composition is made more spherical. It was completed by finding out.
  • Wadell's sphericity ( ⁇ ) is known as an index for determining whether or not the particle shape is close to a sphere.
  • Sr sialon phosphors usually belong to a low symmetry crystal system called orthorhombic system.
  • the shape of the particles of the Sr sialon phosphor generally has a particle shape different from a spherical shape, such as a plate shape or a column shape.
  • the particle shape was 0.55 or less when evaluated by Wadell's sphericity ( ⁇ ), and was a shape far from the sphere.
  • a light emitting device comprising a combination of a semiconductor light emitting element and a phosphor
  • light emitted from the phosphor that has emitted light after the light emitted from the semiconductor light emitting element is reflected on the phosphor surface or absorbed by the phosphor.
  • Is reflected on the surface of another phosphor and light is extracted to the outside while repeating multiple reflections.
  • light energy loss occurs.
  • a spherical particle having a small surface area would be suitable as the particle shape of the phosphor.
  • the present inventors sought to spheroidize the particle shape of the Sr sialon phosphor. As a result, it has been found that the sphericity of the phosphor particles can be improved if the process conditions for producing the phosphor are specified conditions. Then, it has been found that the luminance level is greatly improved according to the light emitting device using the phosphor having improved sphericity.
  • the phosphor of the embodiment solves the above-described problems, and the following general formula (1) [Chemical 1] General formula: (Sr 1-x , Eu x ) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ (1) (Wherein x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, and ⁇ , ⁇ , ⁇ , and ⁇ are values converted when ⁇ is 2, 5 ⁇ ⁇ ⁇ 9, 1 ⁇ ⁇ ⁇ 5, 0 ⁇ ⁇ ⁇ 1.5, 10 ⁇ ⁇ ⁇ 20)
  • a phosphor comprising a europium-activated sialon crystal having a basic composition represented by the formula: wherein the phosphor has a sphericity of particles of 0.60 or more, and ultraviolet light, purple light or blue light. It emits red light when excited by.
  • the phosphor manufacturing method of the embodiment solves the above-described problems, and is a phosphor manufacturing method for manufacturing the phosphor, in which a phosphor raw material mixture that is a raw material of the phosphor is ZrO. includes 2 and at least one compound of HfO 2 0.1 ⁇ 5 wt%, the of the phosphor powder obtained by firing the raw material mixture of the phosphor, in part by integrating sequentially from smaller particles particle size It has the classification process which removes a certain small particle part in the range of 20 mass% or less of the said fluorescent substance powder by classification.
  • the light-emitting device of the embodiment solves the above-described problem.
  • a substrate, a semiconductor light-emitting element that is disposed on the substrate and emits ultraviolet light, violet light, or blue light, and the semiconductor light-emitting element A phosphor that is formed so as to cover a light emitting surface and includes a phosphor that emits visible light when excited by light emitted from the semiconductor light emitting element, and the phosphor is any one of claims 1 to 5.
  • the phosphor of the term is included.
  • the Sr sialon structure phosphor and the light emitting device of the present invention have high luminous efficiency.
  • the method for producing a phosphor of the present invention can efficiently produce a phosphor having a Sr sialon structure and a light emitting device with high luminous efficiency.
  • the phosphor, the method for producing the phosphor, and the light emitting device of the embodiment will be described.
  • the phosphor of the embodiment is a red phosphor that emits red light when excited by ultraviolet light, violet light, or blue light.
  • the red phosphor of the present invention has the following general formula (1) [Chemical 2] General formula: (Sr 1-x , Eu x ) ⁇ Si ⁇ Al ⁇ O ⁇ N ⁇ (1) (Wherein x is 0 ⁇ x ⁇ 1, ⁇ is 0 ⁇ ⁇ 3, and ⁇ , ⁇ , ⁇ , and ⁇ are values converted when ⁇ is 2, 5 ⁇ ⁇ ⁇ 9, 1 ⁇ ⁇ ⁇ 5, 0 ⁇ ⁇ ⁇ 1.5, 10 ⁇ ⁇ ⁇ 20) It is the fluorescent substance which consists of a europium activated sialon crystal
  • crystallization which has the basic composition represented by these.
  • the phosphor of the present invention emits red light when excited by ultraviolet light, violet light, or blue light.
  • the phosphor emitting red light is also referred to as “Sr sialon red phosphor”.
  • the phosphor of the present invention has a sphericity of particles of 0.60 or more.
  • the europium activated sialon crystal having the basic composition represented by the general formula (1) is an orthorhombic single crystal.
  • the Sr sialon red phosphor a crystal composed of one europium activated sialon crystal having the basic composition represented by the general formula (1), or two or more of these europium activated sialon crystals are aggregated. This is an aggregate of crystal bodies.
  • Sr sialon red phosphor takes the form of single crystal powder.
  • the Sr sialon red phosphor powder has an average particle size of usually 1 ⁇ m to 100 ⁇ m, preferably 5 ⁇ m to 80 ⁇ m, more preferably 8 ⁇ m to 80 ⁇ m, and more preferably 8 ⁇ m to 40 ⁇ m.
  • the average particle diameter is a value measured by the Coulter counter method, it means the median D 50 of the cumulative volume distribution.
  • the shape of the powder particles is usually different from a spherical shape such as a plate shape or a column shape.
  • the Sr sialon red phosphor is an aggregate of crystals obtained by aggregating two or more of the europium activated sialon crystals
  • the Sr sialon red phosphor is separated for each europium activated sialon crystal by crushing. It is possible.
  • x is a number that satisfies 0 ⁇ x ⁇ 1, preferably 0.025 ⁇ x ⁇ 0.5, and more preferably 0.25 ⁇ x ⁇ 0.5.
  • the fired body obtained in the firing step is not a phosphor, and when x is 1, the luminous efficiency of the Sr sialon red phosphor is lowered.
  • x is preferably a number satisfying 0.025 ⁇ x ⁇ 0.5, and more preferably a number satisfying 0.25 ⁇ x ⁇ 0.5, even if 0 ⁇ x ⁇ 1.
  • the total subscript (1-x) ⁇ of Sr is a number satisfying 0 ⁇ (1-x) ⁇ ⁇ 3.
  • the overall subscript x ⁇ of Eu is a number satisfying 0 ⁇ x ⁇ ⁇ 3. That is, in the general formula (1), the total subscripts of Sr and Eu are numbers exceeding 0 and less than 3, respectively.
  • the total amount of Sr and Eu is represented by ⁇ .
  • ⁇ the total amount of Sr and Eu.
  • ⁇ , ⁇ , ⁇ and ⁇ are numerical values converted when ⁇ is 2.
  • ⁇ , which is a subscript of Si is a number satisfying 5 ⁇ ⁇ ⁇ 9 when the numerical value converted when ⁇ is 2.
  • ⁇ , which is a subscript of Al is a number satisfying 1 ⁇ ⁇ ⁇ 5 as a numerical value converted when ⁇ is 2.
  • ⁇ , which is a subscript of O is a number satisfying 0 ⁇ ⁇ ⁇ 1.5 as a numerical value converted when ⁇ is 2.
  • ⁇ , which is a subscript of N is a number satisfying 10 ⁇ ⁇ ⁇ 20 when ⁇ is 2.
  • the composition of the phosphor obtained by firing is an orthorhombic system represented by the general formula (1).
  • the Sr sialon red phosphor may be different.
  • the Sr sialon red phosphor of the present invention has a sphericity of 0.60 or more.
  • the sphericity means Wadell's sphericity ( ⁇ ).
  • a sphericity of 0.60 or more is preferable because the luminance level of the Sr sialon red phosphor is high.
  • the Sr sialon red phosphor is manufactured, for example, by the following method.
  • Examples of the Sr sialon red phosphor represented by the general formula (1) include strontium carbonate SrCO 3 , aluminum nitride AlN, silicon nitride Si 3 N 4 , europium oxide Eu 2 O 3 , and oxides of non-Eu rare earth elements.
  • the phosphor raw material mixture is prepared by dry-mixing the raw materials, and the phosphor raw material mixture is fired in a nitrogen atmosphere.
  • the phosphor raw material mixture includes a high melting point oxide such as ZrO 2 and HfO 2 .
  • the phosphor raw material mixture contains 0.1% of at least one compound of ZrO 2 and HfO 2 when the phosphor raw material mixture containing at least one compound of ZrO 2 and HfO 2 is 100% by mass. To 5% by mass, preferably 0.3 to 4% by mass, more preferably 0.3 to 3% by mass.
  • the total amount of both is set within the range of the above blending amount.
  • the phosphor raw material mixture contains at least one compound of ZrO 2 and HfO 2 because the sphericity of the red phosphor powder is increased.
  • the blending amount of at least one compound of ZrO 2 and HfO 2 exceeds 5% by mass, the luminance of the phosphor tends to be lowered.
  • ZrO 2 and HfO 2 are preferably powders.
  • the phosphor raw material mixture may contain, as a flux agent, an alkali metal or alkaline earth metal fluoride such as potassium fluoride which is a reaction accelerator, strontium chloride SrCl 2 or the like.
  • an alkali metal or alkaline earth metal fluoride such as potassium fluoride which is a reaction accelerator, strontium chloride SrCl 2 or the like.
  • Fluorescent material mixture is filled in a refractory crucible.
  • a refractory crucible for example, a boron nitride crucible, a carbon crucible or the like is used.
  • the phosphor raw material mixture filled in the refractory crucible is fired.
  • the baking apparatus an apparatus is used in which the composition and pressure of the internal baking atmosphere in which the refractory crucible is arranged, the baking temperature and the baking time are maintained under predetermined conditions.
  • an electric furnace is used as such a baking apparatus.
  • An inert gas is used as the firing atmosphere.
  • the inert gas for example, N 2 gas, Ar gas, a mixed gas of N 2 and H 2 or the like is used.
  • N 2 in the firing atmosphere has a function of eliminating an appropriate amount of oxygen O from the phosphor raw material mixture when the phosphor powder is fired from the phosphor raw material mixture.
  • Ar in the firing atmosphere has an action of not supplying excess oxygen O to the phosphor raw material mixture when the phosphor powder is fired from the phosphor raw material mixture.
  • H 2 in the firing atmosphere acts as a reducing agent when the phosphor powder is fired from the phosphor raw material mixture, and more oxygen O is lost from the phosphor raw material mixture than N 2 .
  • the firing time can be shortened compared to the case where H 2 is not contained in the inert gas.
  • the content of H 2 in the inert gas is too large, the composition of the obtained phosphor powder tends to be different from the Sr sialon red phosphor represented by the general formula (1). There is a possibility that the emission intensity of the light becomes weak.
  • N 2: H 2 Inert gas, if a mixed gas of N 2 gas or N 2 and H 2, the molar ratio of N 2 and H 2 in the inert gas, N 2: H 2 is usually 10: 0 To 1: 9, preferably 8: 2 to 2: 8, more preferably 6: 4 to 4: 6.
  • the molar ratio of N 2 to H 2 in the inert gas is within the above range, that is, usually 10: 0 to 1: 9, a high-quality single crystal with few crystal structure defects in a short time firing
  • the phosphor powder can be obtained.
  • the molar ratio of N 2 and H 2 in the inert gas, the N 2 and H 2 which is continuously fed into the chamber of the calciner, the ratio of the flow rate of N 2 and H 2 are in the ratio
  • the above ratio that is, usually 10: 0 to 1: 9, can be obtained by continuously supplying the mixed gas and exhausting the mixed gas in the chamber.
  • An inert gas that is a firing atmosphere is preferably distributed so as to form an air flow in a chamber of a firing apparatus because firing is performed uniformly.
  • the pressure of the inert gas that is the firing atmosphere is usually 0.1 MPa (approximately 1 atm) to 1.0 MPa (approximately 10 atm), preferably 0.4 MPa to 0.8 MPa.
  • the composition of the phosphor powder obtained after firing is represented by the general formula (1) as compared with the phosphor raw material mixture charged in the crucible before firing. It is easy to differ from a red phosphor, and for this reason, the emission intensity of the phosphor powder may be weakened.
  • the firing conditions are not particularly changed even when the pressure is 1.0 MPa or less, which is not preferable because energy is wasted.
  • the firing temperature is usually 1400 ° C to 2000 ° C, preferably 1750 ° C to 1950 ° C, more preferably 1800 ° C to 1900 ° C.
  • the firing temperature is in the range of 1400 ° C. to 2000 ° C., a high-quality single crystal phosphor powder with few crystal structure defects can be obtained by firing in a short time.
  • the phosphor powder obtained may be excited by ultraviolet light, violet light or blue light, and the color of the emitted light may not be a desired color. That is, when it is desired to manufacture the Sr sialon red phosphor represented by the general formula (1), there is a possibility that the color of light emitted by being excited by ultraviolet light, violet light, or blue light becomes a color other than red. is there.
  • the firing time is usually 0.5 hours to 20 hours, preferably 1 hour to 10 hours, more preferably 1 hour to 5 hours, more preferably 1.5 hours to 2.5 hours.
  • the composition of the obtained phosphor powder tends to be different from that of the Sr sialon red phosphor represented by the general formula (1). There exists a possibility that the emitted light intensity of powder may become weak.
  • the firing time is preferably a short time within a range of 0.5 to 20 hours when the firing temperature is high, and a long time within a range of 0.5 to 20 hours when the firing temperature is low. It is preferable that
  • a fired body made of phosphor powder is generated.
  • the fired body is usually in the form of a weak and solid lump.
  • a phosphor powder is obtained.
  • the phosphor powder obtained by crushing becomes a powder of Sr sialon red phosphor represented by the general formula (1).
  • the Sr sialon red phosphor obtained through the process as described above has a plate shape or columnar shape, and is different from a spherical shape.
  • the present inventors greatly affect the particle shape by adding a small amount of a high melting point oxide such as ZrO 2 or HfO 2 to the phosphor raw material mixture. I found out.
  • the long axis of the columnar particles of the Sr sialon red phosphor is shortened, resulting in a more spherical shape such as a cubic shape. I found it.
  • the Sr sialon red phosphor is improved in the Wadell sphericity of particles from about 0.4 to 0.5 to about 0.5 to 0.55.
  • the Wadell sphericity ( ⁇ ) is obtained by the following method.
  • the particle size distribution of the powdered phosphor is measured by the Coulter counter method.
  • Ni is the number frequency at a certain particle size Di.
  • the Coulter counter method is a method of defining the particle size from the voltage change according to the volume of the particle
  • the particle size Di is the diameter of a spherical particle having the same volume as the actual particle defined by the voltage change.
  • the specific surface area (S) of the powder phosphor is calculated using the number frequency Ni and the particle size Di.
  • the specific surface area is a value obtained by dividing the surface area of the powder by its weight, and is defined as the surface area per unit weight.
  • the weight of the particle having the particle diameter Di is (4 ⁇ / 3) ⁇ (Di / 2) 3 ⁇ Ni ⁇ ⁇ (where ⁇ is the density of the powder).
  • the weight of the powder is represented by the following formula (A2) in which this weight is added to each particle size. [Equation 2] ⁇ ⁇ (4 ⁇ / 3) ⁇ (Di / 2) 3 ⁇ Ni ⁇ ⁇ (A2) Further, the surface area of the particles having the particle diameter Di is 4 ⁇ ⁇ (Di / 2) 2 ⁇ Ni.
  • the specific surface area (S) of the powder phosphor is represented by the following formula (A3).
  • the Wadell sphericity ( ⁇ ) can be obtained by the following formula (A5) by comparing the specific surface area calculated from the particle size distribution with the specific surface area calculated from the particle diameter of the aeration method.
  • the particle size of the particle size distribution is usually expressed as a particle size range.
  • the particle size Di is set to an intermediate value of the particle size range, and the particle size range is set to every 0.2 ⁇ m in order to improve accuracy.
  • the particle size distribution is plotted on log-normal probability paper, it can be approximated by two straight lines. Therefore, the number frequency data for every 0.2 ⁇ m can be easily obtained from the two normal probability distributions.
  • the Wadell sphericity of the phosphor powder is improved to 0.60 or more by performing a classification step of classifying and removing these small particles.
  • a small particle portion which is a portion integrated in order from a particle having a small particle diameter, among the phosphor powders obtained by firing the phosphor raw material mixture is classified into 20% by mass of the phosphor powder. It is the process of removing in the following ranges.
  • a classification method for example, a method using a mesh or a method in which a phosphor is dispersed and left in water and a small particle is removed from a sedimentation difference in particle diameter can be used.
  • the amount of small particles removed by such classification is 20% by mass or less with respect to the amount of phosphor before classification.
  • Table 1 shows an example of the relationship between the change in the sphericity of the phosphor powder and the luminance of the light emitting device of the present invention.
  • a phosphor having a composition of Sr 1.6 Eu 0.4 Si 7 Al 3 ON 13 was used as the phosphor.
  • Table 1 shows that there is a correlation between the sphericity and the light emission luminance. And it turns out that the brightness
  • the light emitting device is a light emitting device using the Sr sialon red phosphor represented by the general formula (1).
  • the light-emitting device is formed on a substrate, a semiconductor light-emitting element that is disposed on the substrate, emits ultraviolet light, violet light, or blue light, and covers a light-emitting surface of the semiconductor light-emitting element.
  • a light emitting unit including a phosphor that emits visible light when excited by light emitted from the light emitting element, and the phosphor is a light emitting device including a Sr sialon red phosphor represented by the general formula (1). As a result, the light emitting device emits red light.
  • the light emitting device includes a green phosphor such as a blue phosphor and an Sr sialon green phosphor having an Sr sialon structure in addition to the Sr sialon red phosphor in the light emitting portion
  • the phosphors of the respective colors A white light emitting device that emits white light from the emitting surface of the light emitting device by mixing light of each color such as red light, blue light, and green light emitted from the light emitting device.
  • the light emitting device may include a Sr sialon red phosphor and a Sr sialon green phosphor represented by the general formula (1) as the phosphor.
  • a Sr sialon red phosphor and Sr sialon green phosphor represented by the general formula (1) as the phosphor.
  • substrate for example, ceramics such as alumina and aluminum nitride (AlN), glass epoxy resin, and the like are used. It is preferable that the substrate is an alumina plate or an aluminum nitride plate because the thermal conductivity is high and the temperature rise of the LED light source can be suppressed.
  • AlN aluminum nitride
  • the substrate is an alumina plate or an aluminum nitride plate because the thermal conductivity is high and the temperature rise of the LED light source can be suppressed.
  • the semiconductor light emitting element is disposed on the substrate.
  • a semiconductor light emitting element that emits ultraviolet light, violet light, or blue light is used.
  • ultraviolet light, violet light or blue light means light having a peak wavelength in the wavelength range of ultraviolet light, violet light or blue light.
  • the ultraviolet light, violet light, or blue light is preferably light having a peak wavelength in the range of 370 nm to 470 nm.
  • Examples of the semiconductor light emitting device that emits ultraviolet light, violet light, or blue light include ultraviolet light emitting diodes, violet light emitting diodes, blue light emitting diodes, ultraviolet laser diodes, purple laser diodes, and blue laser diodes.
  • the semiconductor light emitting element is a laser diode
  • the peak wavelength means a peak oscillation wavelength.
  • the light emitting part includes a phosphor that is excited by ultraviolet light, violet light, or blue light, which is emitted light from the semiconductor light emitting element, and emits visible light in the transparent resin cured product, and the light emitting surface of the semiconductor light emitting element It is formed so that it may coat
  • the phosphor used in the light emitting part includes at least the above Sr sialon red phosphor.
  • the phosphor may contain Sr sialon green phosphor.
  • the phosphor used in the light emitting unit may include the above Sr sialon red phosphor and a phosphor other than the Sr sialon red phosphor.
  • a phosphor other than the Sr sialon red phosphor for example, a red phosphor, a blue phosphor, a green phosphor, a yellow phosphor, a purple phosphor, an orange phosphor, and the like can be used.
  • the phosphor a powdery one is usually used.
  • the phosphor is contained in the cured transparent resin. Usually, the phosphor is dispersed in a cured transparent resin.
  • the transparent resin cured product used for the light emitting part is obtained by curing a transparent resin, that is, a highly transparent resin.
  • a transparent resin for example, a silicone resin or an epoxy resin is used. Silicone resins are preferred because they have higher UV resistance than epoxy resins. Among silicone resins, dimethyl silicone resin is more preferable because of its high UV resistance.
  • the light emitting part is preferably composed of 20 to 1000 parts by mass of the transparent resin cured product with respect to 100 parts by mass of the phosphor. When the ratio of the transparent resin cured product to the phosphor is within this range, the light emission intensity of the light emitting part is high.
  • the film thickness of the light emitting part is usually 80 ⁇ m or more and 800 ⁇ m or less, preferably 150 ⁇ m or more and 600 ⁇ m or less.
  • the film thickness of the light emitting portion is not less than 80 ⁇ m and not more than 800 ⁇ m, practical brightness can be ensured with a small amount of leakage of ultraviolet light, violet light, or blue light emitted from the semiconductor light emitting element.
  • the film thickness of the light emitting part is 150 ⁇ m or more and 600 ⁇ m or less, light emitted from the light emitting part can be brightened.
  • the light emitting unit first mixes a transparent resin and a phosphor to prepare a phosphor slurry in which the phosphor is dispersed in the transparent resin, and then applies the phosphor slurry to the semiconductor light emitting device and the inner surface of the globe. It is obtained by curing.
  • the light emitting portion When the phosphor slurry is applied to the semiconductor light emitting element, the light emitting portion is in contact with and covered with the semiconductor light emitting element. Further, when the phosphor slurry is applied to the inner surface of the globe, the light emitting portion is formed on the inner surface of the globe while being separated from the semiconductor light emitting element.
  • a light emitting device in which the light emitting portion is formed on the inner surface of the globe is referred to as a remote phosphor type LED light emitting device.
  • the phosphor slurry can be cured by heating to 100 ° C. to 160 ° C., for example.
  • FIG. 1 is an example of an emission spectrum of the light emitting device.
  • a violet LED that emits violet light having a peak wavelength of 400 nm is used as a semiconductor light emitting device, and a phosphor has a basic composition represented by Sr 1.6 Eu 0.4 Si 7 Al 3 ON 13. It is an emission spectrum of a red light emitting device at 25 ° C. using only Sr sialon red phosphor.
  • the purple LED has a forward voltage drop Vf of 3.190 V and a forward current If of 20 mA.
  • the red light emitting device using the Sr sialon red phosphor represented by the general formula (1) as the phosphor has a high emission intensity even when short-wave excitation light such as violet light is used. .
  • Example 1 (Production of red phosphor) First, 312 g of SrCO 3 , 162 g of AlN, 432 g of Si 3 N 4 , 93 g of Eu 2 O 3 , and 5 g of ZrO 2 were weighed, and an appropriate amount of a fluxing agent was added thereto, followed by dry mixing to obtain a phosphor raw material A mixture was prepared. Thereafter, the phosphor raw material mixture was filled in a boron nitride crucible. When a boron nitride crucible filled with the phosphor raw material mixture was baked in an electric furnace at 1850 ° C.
  • the baked powder after classification was filtered, dried, and then sieved with a nylon mesh having an opening of 45 microns, whereby the baked powder of the present invention was obtained.
  • the calcined powder was analyzed, it was a single crystal Sr sialon red phosphor having the composition shown in Table 2.
  • a light emitting device was manufactured using the obtained Sr sialon red phosphor.
  • Comparative Example 1 is a phosphor produced in the same manner as Example 1 except that ZrO 2 that is a high melting point oxide is not blended in the phosphor raw material mixture and the classification step is not performed. Table 2 shows the measurement results of sphericity and luminous efficiency.
  • Example 1 A phosphor was produced in the same manner as in Example 1 except that ZrO 2 which is a high melting point oxide was not blended in the phosphor raw material mixture and the classification step was not performed.
  • ZrO 2 which is a high melting point oxide was not blended in the phosphor raw material mixture and the classification step was not performed.
  • the sphericity and the light emission efficiency of the light emitting device using the same were measured in the same manner as in Example 1.
  • Table 2 shows the measurement results of sphericity and luminous efficiency.
  • Examples 2 to 10, Comparative Examples 2 to 10 (Production of red phosphor)
  • the blending amount of the high melting point oxides such as ZrO 2 and HfO 2 in the phosphor raw material mixture is changed as shown in Table 2 to obtain a calcined powder having the basic composition shown in Table 2, and the classification process of the calcined powder is shown.
  • a red phosphor was prepared in the same manner as in Example 1 except that the process was performed as shown in Example 2 (Examples 2 to 10).
  • a phosphor was produced in the same manner as in Examples 2 to 10 except that a high melting point oxide such as ZrO 2 and HfO 2 was not added to the phosphor raw material mixture and no classification step was performed (Comparative Example). 2-10).
  • Example 2 shows the measurement results of sphericity and luminous efficiency.
  • the luminous efficiencies of Examples 2 to 10 are the same as those of Comparative Examples produced in the same manner except that no high melting point oxide such as ZrO 2 and HfO 2 is blended in the phosphor raw material mixture and no classification step is performed. It is shown as a relative value (%) where the efficiency (lm / W) is 100. Specifically, the luminous efficiencies of Examples 2 to 10 are shown as relative values (%) where the luminous efficiency (lm / W) of Comparative Examples 2 to 10 is 100, respectively.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

　L'invention concerne un corps fluorescent obtenu à partir d'un cristal de sialon activé à l'europium et de composition élémentaire représentée par la formule générale (1) : (Sr1-x Eux)αSiβAlγOδNω (1), dans laquelle, x est tel que 0＜x＜1, α est tel que 0＜α ≦ 3, β,γ,δ et ω sont tels que, lorsque α vaut 2, ils remplissent les conditions suivantes: 5 ≦ β ≦ 9, 1 ≦ γ ≦ 5, 0 ≦ δ ≦ 1,5 et 10 ≦ ω ≦ 20. Ce corps fluorescent présente un degré de sphéricité des particules supérieur ou égal à 0,60, et émet une lumière rouge lorsqu'il est excité par une lumière ultraviolette, violette ou bleue.
PCT/JP2013/057406 2012-03-16 2013-03-15 Corps fluorescent, son procédé de fabrication ainsi que dispositif luminescent WO2013137435A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017051457A1 (fr) * 2015-09-24 2017-03-30 株式会社 東芝 Substance fluorescente, son procédé de production et dispositif électroluminescent comprenant ladite substance fluorescente
US9890328B2 (en) 2014-12-12 2018-02-13 General Electric Company Phosphor compositions and lighting apparatus thereof

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Publication number Priority date Publication date Assignee Title
JP2002194347A (ja) * 2000-12-22 2002-07-10 Toshiba Corp 蛍光体，その製造方法および発光デバイス
JP2006052337A (ja) * 2004-08-12 2006-02-23 Fujikura Ltd サイアロン蛍光体およびその製造方法
WO2007105631A1 (fr) * 2006-03-10 2007-09-20 Kabushiki Kaisha Toshiba Phosphore et dispositif luminescent
JP2007332324A (ja) * 2006-06-19 2007-12-27 Denki Kagaku Kogyo Kk サイアロン蛍光体とその製造方法、およびそれを用いた発光素子
JP2010106127A (ja) * 2008-10-29 2010-05-13 Toshiba Corp 赤色蛍光体およびそれを用いた発光装置
WO2010098141A1 (fr) * 2009-02-26 2010-09-02 日亜化学工業株式会社 Substance fluorescente, son procédé de production et dispositif luminescent l'utilisant
JP2011184577A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 蛍光体、蛍光体の製造方法、発光装置及び発光モジュール

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Publication number Priority date Publication date Assignee Title
JP2002194347A (ja) * 2000-12-22 2002-07-10 Toshiba Corp 蛍光体，その製造方法および発光デバイス
JP2006052337A (ja) * 2004-08-12 2006-02-23 Fujikura Ltd サイアロン蛍光体およびその製造方法
WO2007105631A1 (fr) * 2006-03-10 2007-09-20 Kabushiki Kaisha Toshiba Phosphore et dispositif luminescent
JP2007332324A (ja) * 2006-06-19 2007-12-27 Denki Kagaku Kogyo Kk サイアロン蛍光体とその製造方法、およびそれを用いた発光素子
JP2010106127A (ja) * 2008-10-29 2010-05-13 Toshiba Corp 赤色蛍光体およびそれを用いた発光装置
WO2010098141A1 (fr) * 2009-02-26 2010-09-02 日亜化学工業株式会社 Substance fluorescente, son procédé de production et dispositif luminescent l'utilisant
JP2011184577A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 蛍光体、蛍光体の製造方法、発光装置及び発光モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9890328B2 (en) 2014-12-12 2018-02-13 General Electric Company Phosphor compositions and lighting apparatus thereof
WO2017051457A1 (fr) * 2015-09-24 2017-03-30 株式会社 東芝 Substance fluorescente, son procédé de production et dispositif électroluminescent comprenant ladite substance fluorescente

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KR20140121432A (ko) 2014-10-15

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