WO2013132569A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- WO2013132569A1 WO2013132569A1 PCT/JP2012/055507 JP2012055507W WO2013132569A1 WO 2013132569 A1 WO2013132569 A1 WO 2013132569A1 JP 2012055507 W JP2012055507 W JP 2012055507W WO 2013132569 A1 WO2013132569 A1 WO 2013132569A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solder
- semiconductor device
- resistor
- electronic component
- upper pattern
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/22—Resistors with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09745—Recess in conductor, e.g. in pad or in metallic substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a semiconductor device including therein a semiconductor element and an electronic component disposed in the vicinity of the semiconductor element.
- an electronic component such as a resistor for adjusting the balance of input signals input to each semiconductor element is provided in the vicinity of the semiconductor element.
- the electronic component is joined (connected) to the electrode pattern formed on the substrate via solder (see, for example, Patent Document 1).
- the present invention has been made to solve these problems, and an object of the present invention is to provide a semiconductor device capable of improving the life of a solder joint portion of an electronic component.
- a semiconductor device includes a substrate, an electrode pattern formed on the substrate, and an electronic component connected to the electrode pattern via solder, A portion connected to the electronic component via the solder is formed in a concave shape.
- a substrate an electrode pattern formed on the substrate, and an electronic component connected to the electrode pattern via solder, the electrode pattern being connected to the electronic component via solder
- the electrode pattern being connected to the electronic component via solder
- FIG. 1 is a diagram showing a configuration of a semiconductor device according to a first embodiment. It is a figure which shows the structure of the semiconductor device by a base technology.
- FIG. 2 is a diagram showing a configuration of a semiconductor device according to the prerequisite technology.
- FIG. 2 shows the configuration of the resistor 4 (electronic component) provided in the semiconductor device.
- the resistor 4 is disposed in the vicinity of a semiconductor element (not shown) that is also provided inside the semiconductor device.
- an upper pattern 2 is formed on the ceramic 1, and a lower pattern 3 is formed on the opposite side of the ceramic 1 from the upper pattern 2.
- the upper pattern 2 and the lower pattern 3 are electrode patterns made of a conductor formed on the ceramic 1.
- the resistor 4 is disposed so as to straddle the upper pattern 2.
- the electrode portion of the resistor 4 is joined (connected) via the upper pattern 2 and the solder 5.
- the surface of the upper pattern 2 has a flat shape with no steps.
- solder joints of the resistors 4 are also required to have improved reliability (lifetime improvement) at high temperatures.
- the solder joint portion of the resistor 4 provided inside the semiconductor device according to the premise technique as shown in FIG. 2 is not provided with a measure for improving the life, and the solder joint portion when the semiconductor element operates at a high temperature. Therefore, there is a possibility that a problem such as peeling of the solder 5 occurs.
- the present invention has been made to solve the above problems, and will be described in detail below.
- FIG. 1 is a diagram showing a configuration of a semiconductor device according to an embodiment of the present invention.
- FIG. 1 shows the configuration of the resistor 4 (electronic component) provided in the semiconductor device.
- the resistor 4 is disposed in the vicinity of a semiconductor element (not shown) that is also provided inside the semiconductor device.
- the semiconductor element may be SiC, for example. Since SiC operates at a high temperature, it is particularly effective in the present invention to use SiC as a semiconductor element.
- an upper pattern 2 is formed on a ceramic 1 serving as a substrate, and a lower pattern 3 is formed on the opposite side of the upper pattern 2 on the ceramic 1.
- the upper pattern 2 and the lower pattern 3 are electrode patterns made of a conductor formed on the ceramic 1.
- the semiconductor element is disposed on the ceramic 1 or the upper pattern 2 and in the vicinity of the resistor 4.
- the resistor 4 is disposed so as to straddle the upper pattern 2.
- the electrode portion of the resistor 4 is joined (connected) via the upper pattern 2 and the solder 5.
- a concave stepped portion 6 is formed on the surface of the upper pattern 2.
- the resistor 4 is disposed on the stepped shape portion 6 and joined to the upper pattern 2 via the solder 5. At this time, the solder 5 is formed so as to cover the bottom surface and the side surface of the stepped shape portion 6.
- the semiconductor device according to the present embodiment is joined (connected) to the ceramic 1 (substrate), the upper pattern 2 (electrode pattern) formed on the ceramic 1, and the solder 5 on the upper pattern 2.
- a resistor 4 (electronic component) is provided, and the upper pattern 2 is formed in a concave shape at a portion connected via the resistor 4 and the solder 5 (stepped shape portion 6).
- the amount of the solder 5 is increased as compared with the conventional case, and the area where the solder 5 is joined to the resistor 4 and the upper pattern 2 is increased. Therefore, the bonding strength of the solder 5 can be increased as compared with the conventional case.
- the joint strength of the solder 5 can be increased by forming the stepped shape portion 6 on the upper pattern 2. Therefore, even if the resistor 4 (electronic component) is disposed in the vicinity of the semiconductor element, the life of the solder joint portion of the resistor 4 can be improved.
- it is particularly effective to apply a semiconductor element such as SiC that operates at a high temperature to the present invention, and the reliability of the entire semiconductor device including the semiconductor element can be improved.
- the resistor 4 is used as an example of the electronic component.
- the electronic device is not limited to the resistor 4 and may be another electronic component.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Details Of Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
まず、本発明の前提となる技術(前提技術)について説明する。
図1は、本発明の実施の形態による半導体装置の構成を示す図である。
Claims (4)
- 基板と、
前記基板上に形成された電極パターンと、
前記電極パターン上にはんだを介して接続された電子部品と、
を備え、
前記電極パターンは、前記電子部品と前記はんだを介して接続される箇所が、凹形状に形成されることを特徴とする、半導体装置。 - 前記電子部品は、抵抗器であることを特徴とする、請求項1に記載の半導体装置。
- 前記電子部品は、前記基板または前記電極パターン上に配置された半導体素子の近傍に設けられることを特徴とする、請求項1に記載の半導体装置。
- 前記半導体素子は、SiCにより形成されることを特徴とする、請求項3に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/353,990 US20140291701A1 (en) | 2012-03-05 | 2012-03-05 | Semiconductor device |
DE112012005984.0T DE112012005984T5 (de) | 2012-03-05 | 2012-03-05 | Halbleitervorrichtung |
PCT/JP2012/055507 WO2013132569A1 (ja) | 2012-03-05 | 2012-03-05 | 半導体装置 |
CN201280071130.3A CN104170534A (zh) | 2012-03-05 | 2012-03-05 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/055507 WO2013132569A1 (ja) | 2012-03-05 | 2012-03-05 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013132569A1 true WO2013132569A1 (ja) | 2013-09-12 |
Family
ID=49116085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/055507 WO2013132569A1 (ja) | 2012-03-05 | 2012-03-05 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140291701A1 (ja) |
CN (1) | CN104170534A (ja) |
DE (1) | DE112012005984T5 (ja) |
WO (1) | WO2013132569A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017205360B3 (de) * | 2017-03-29 | 2018-07-19 | Te Connectivity Germany Gmbh | Elektrisches Kontaktelement und Verfahren zur Herstellung einer hartgelöteten, elektrisch leitenden Verbindung mit einem Gegenkontakt mittels eines eingepressten Lotkörpers aus Hartlot |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63100871U (ja) * | 1986-12-20 | 1988-06-30 | ||
JPH0537105A (ja) * | 1991-07-29 | 1993-02-12 | Sanyo Electric Co Ltd | 混成集積回路 |
JP2008010617A (ja) * | 2006-06-29 | 2008-01-17 | Matsushita Electric Ind Co Ltd | パワー半導体モジュール |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3458531B2 (ja) * | 1995-06-02 | 2003-10-20 | 株式会社デンソー | 交流発電機 |
DE69938582T2 (de) * | 1998-09-09 | 2009-06-04 | Seiko Epson Corp. | Halbleiterbauelement, seine herstellung, leiterplatte und elektronischer apparat |
US6798058B1 (en) * | 1999-02-18 | 2004-09-28 | Seiko Epson Corporation | Semiconductor device, mounting and method of manufacturing mounting substrate, circuit board, and electronic instrument |
US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
JP2006210480A (ja) * | 2005-01-26 | 2006-08-10 | Nec Electronics Corp | 電子回路基板 |
US7742314B2 (en) * | 2005-09-01 | 2010-06-22 | Ngk Spark Plug Co., Ltd. | Wiring board and capacitor |
JP4841914B2 (ja) * | 2005-09-21 | 2011-12-21 | コーア株式会社 | チップ抵抗器 |
JP5258045B2 (ja) * | 2006-06-30 | 2013-08-07 | 日本電気株式会社 | 配線基板、配線基板を用いた半導体装置、及びそれらの製造方法 |
JP5331546B2 (ja) * | 2008-04-24 | 2013-10-30 | 株式会社フジクラ | 圧力センサモジュール及び電子部品 |
EP2519084A4 (en) * | 2009-12-24 | 2014-01-22 | Furukawa Electric Co Ltd | ASSEMBLY STRUCTURE FOR INJECTION MOLDED SUBSTRATE AND MOUNTING COMPONENT |
-
2012
- 2012-03-05 WO PCT/JP2012/055507 patent/WO2013132569A1/ja active Application Filing
- 2012-03-05 CN CN201280071130.3A patent/CN104170534A/zh active Pending
- 2012-03-05 DE DE112012005984.0T patent/DE112012005984T5/de not_active Withdrawn
- 2012-03-05 US US14/353,990 patent/US20140291701A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63100871U (ja) * | 1986-12-20 | 1988-06-30 | ||
JPH0537105A (ja) * | 1991-07-29 | 1993-02-12 | Sanyo Electric Co Ltd | 混成集積回路 |
JP2008010617A (ja) * | 2006-06-29 | 2008-01-17 | Matsushita Electric Ind Co Ltd | パワー半導体モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20140291701A1 (en) | 2014-10-02 |
DE112012005984T5 (de) | 2014-12-04 |
CN104170534A (zh) | 2014-11-26 |
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