WO2013118765A1 - Deposition device and film-forming method using deposition device - Google Patents

Abstract

The invention addresses the problem of providing a superior deposition device and a film-forming method using said deposition device. The deposition device: is capable of deposition on a large substrate even with a small deposition mask (3) by the substrate (2) being separated from and being moved relative to the deposition mask (3) and the vapor source (1); is capable of achieving a highly detailed mask opening (4), the problem of warping not occurring easily because a small deposition mask (3) can be used; and, using a configuration in which the non-film-forming areas around the film-forming areas are also covered by a separately provided protective mask (5), is capable of reliably preventing deposition on the non-film-forming areas and of achieving high quality, high yield deposition. A deposition device, which has a configuration in which a moving device, which moves the substrate (2) relative to the vapor source (1) and the deposition mask (3) with the substrate (2) separated from the deposition mask, is provided and which provides a protective mask (5) between the substrate (2) and the deposition mask (3), the protective mask covering the non-film-forming areas (29) so that the deposited film does not adhere to the non-film-forming areas (29) surrounding the film-forming areas.

Description

Vapor deposition apparatus and film forming method using vapor deposition apparatus

The present invention relates to a vapor deposition apparatus for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate and a film forming method using the vapor deposition apparatus.

In recent years, organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.

An organic EL device such as an organic EL display device has a configuration in which an electrode layer and a light emitting layer in which a plurality of organic layers are laminated are formed on a substrate, and a sealing layer is further formed on the substrate. Compared with high-speed response, a high viewing angle and high contrast can be realized.

Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.

Further, in the manufacture of such an organic EL device, a vapor deposition mask for obtaining a desired film formation pattern is required to be enlarged with an increase in the size of the substrate, but it is difficult to increase the size of a high-definition mask. Even if it can be manufactured, various problems may occur in practice due to distortion problems.

Therefore, the applicant has developed a vapor deposition apparatus that can deposit a desired film deposition pattern on a large substrate over a wide range even with a small vapor deposition mask by adopting a configuration in which the substrate and the vapor deposition mask are spaced apart and relatively moved. Has been proceeding.

A structure in which such a substrate, a vapor deposition mask and an evaporation source are relatively moved apart from each other, and a film deposition material evaporated from the evaporation source is deposited on the substrate in a film formation pattern defined in the mask opening of the vapor deposition mask. In this vapor deposition apparatus, a vapor deposition film having a desired film formation pattern can be vapor-deposited on a large substrate even with a small vapor deposition mask as described above, but it is difficult to cover the non-deposition portion of the large substrate with the vapor deposition mask.

That is, in the conventional mask vapor deposition method in which the substrate and the vapor deposition mask are in close contact with each other, if the substrate size is small, the vapor deposition mask itself can cover the non-film-formation part. It is difficult to manufacture a vapor deposition mask corresponding to the substrate size (glass substrate (1100mm x 1300mm) or later). In other words, it is difficult to form a high-definition mask opening in a size that covers the entire surface of the substrate, and even if manufactured, it is practically difficult due to distortion problems.

To explain further, for example, on a glass substrate used in an organic EL display device, an electrode wiring pattern of an anode electrode and a cathode electrode and a circuit pattern such as a thin film transistor (TFT) for driving an organic EL element are formed. It is provided as a connection terminal with an external control device for a display device product. When the film forming material adheres to such a region (non-film forming portion), a connection failure occurs in connection with the external control device described above, which causes a significant decrease in product yield.

Therefore, the wiring pattern of these substrates needs to be a non-film forming portion where the film forming material should not adhere.

However, as described above, it is difficult to manufacture a vapor deposition mask corresponding to the substrate size, and even if manufactured, a problem of distortion occurs.

Therefore, the present invention has solved such problems, and by relatively moving the substrate and the vapor deposition mask and the evaporation source in a separated state, even a small vapor deposition mask can be deposited on a large substrate, Since the vapor deposition mask can be small, a high-definition mask opening can be realized, distortion problems are less likely to occur, and the non-film-formation part around the film-formation part is covered with a separate protective mask, An object of the present invention is to provide an excellent vapor deposition apparatus capable of reliably preventing vapor deposition on a non-film forming portion, realizing high quality vapor deposition, and a film forming method using the vapor deposition apparatus.

The gist of the present invention will be described with reference to the accompanying drawings.

The deposition material evaporated from the evaporation source 1 passes through the mask opening 4 of the deposition mask 3 disposed to face the substrate 2, so that the deposition film having the deposition pattern defined by the mask opening 4 is formed. In the vapor deposition apparatus configured to be formed on the film formation portion provided on the film formation surface of the substrate 2, the substrate 2 and the evaporation source in a state where the substrate 2 and the vapor deposition mask 3 are separated from each other. And a protective mask 5 covering the non-film forming part so that the vapor deposition film does not adhere to the non-film forming part around the film forming part. A configuration provided with a protective mask holding device 6 provided between the substrate 2 and the vapor deposition mask 3 to hold the protective mask 5 and move it relative to the evaporation source 1 and the vapor deposition mask 3 together with the substrate 2. Vapor deposition characterized by It relates to the location.

Further, the protective mask holding device 6 for holding the protective mask 5 is provided on a substrate transfer tray 7 for fixing the substrate 2 and transferring the substrate 2 into and out of a vapor deposition chamber for depositing the vapor deposition film on the substrate 2. 2. The vapor deposition apparatus according to claim 1, wherein a magnet 8 is provided and the protective mask 5 is attracted and fixed at a predetermined position by the magnet 8 of the substrate transport tray 7.

Further, the substrate transport tray 7 is provided with a magnet drive mechanism 9 for driving the magnet 8, and by operating the magnet drive mechanism 9, the direction of the magnetic field generated by the magnet 8 is changed, or the magnet 8 Is moved with respect to the protective mask 5 to change the magnetic field acting on the protective mask 5 so that the protective mask 5 is attached to and detached from the substrate transport tray 7. The vapor deposition apparatus according to claim 2, wherein:

The substrate transport tray 7 is provided with at least one adhesive chuck or electrostatic chuck 11 to adsorb and fix the substrate 2 by adsorbing the opposite surface of the substrate 2 to the substrate film forming surface. It concerns on the vapor deposition apparatus of Claim 2 characterized by the above-mentioned.

In addition, the adhesive chuck or the electrostatic chuck 11 has a size corresponding to each region of the film forming unit divided and formed on the substrate 2, and is provided for each region. The vapor deposition apparatus according to claim 4.

Further, the adhesive chuck or electrostatic chuck 11 has a size corresponding to each region of the film forming unit divided and formed on the substrate 2, and at least a central portion of each region is attracted. The vapor deposition apparatus according to claim 4, wherein the vapor deposition apparatus is provided at a position where the vapor deposition is performed.

Further, the film forming surface of the substrate 2 that is attracted and fixed by the adhesive chuck or electrostatic chuck 11 provided on the substrate transport tray 7 is configured to be held parallel to the vapor deposition mask 3. The vapor deposition apparatus according to any one of Claims 4 to 6, wherein the vapor deposition apparatus is characterized.

Further, the vapor deposition mask 3 is stretched by applying tension to the substrate side end of the mask holder 10 provided between the evaporation source 1 and the substrate 2, and is applied to the film formation surface of the substrate 2. The vapor deposition apparatus according to any one of claims 1 to 6, wherein the vapor deposition apparatus is configured to be held in parallel.

The power supply for supplying to the electrostatic chuck 11 provided on the substrate transfer tray 7 is supplied from a power source 13 provided outside the vapor deposition chamber. 6. The vapor deposition apparatus according to any one of 6 above.

The power supply for supplying to the electrostatic chuck 11 provided on the substrate transfer tray 7 is supplied from a power source 15 disposed on the substrate transfer tray 7. 6. The vapor deposition apparatus according to any one of 6 above.

The power supply mechanism further comprises a power supply mechanism for supplying power to the electrostatic chuck through a conductor portion provided inside the substrate transfer tray. This relates to the described vapor deposition apparatus.

Further, the power source 13 is provided with an external power supply mechanism 16 for supplying and charging power from the outside of the vapor deposition chamber through a supplied conductor portion 14 provided outside the substrate transfer tray 7 at the time of film formation. The vapor deposition apparatus according to claim 10, wherein the vapor deposition apparatus is characterized.

Further, the imaging means 17 for imaging the reference pattern provided on the substrate 2 and the vapor deposition mask 3, and the positional deviation amount of the reference pattern is within a predetermined value based on the image captured by the imaging means 17. Alignment is performed by the XYθ stage 25 for the vapor deposition mask that holds the vapor deposition mask 3, and the substrate conveyance tray that conveys the substrate 2 into and out of the vapor deposition chamber in which the substrate 2 is fixed and the vapor deposition film is vapor deposited on the substrate 2. 7. The vapor deposition apparatus according to claim 1, wherein the protective mask 5 is closely fixed to the substrate 2 fixed to the substrate transfer tray 7 or the substrate 2. is there.

Further, the substrate 2 and the protective mask 5 are aligned with respect to the substrate transport tray 7 for transporting the substrate 2 into and out of a deposition chamber for fixing the substrate 2 and depositing the deposited film on the substrate 2. 7. The vapor deposition apparatus according to claim 1, further comprising an alignment unit configured to perform the alignment.

The alignment mechanism is positioned by abutting means 20 that abuts at least one corner of the substrate 2 and the protective mask 5 or two adjacent end surfaces against a butting member 19 provided on the substrate transport tray 7. The vapor deposition apparatus according to claim 14, wherein the protective mask 5 is closely attached to and fixed to the substrate transport tray 7 or the substrate 2 fixed to the substrate transport tray 7. is there.

In addition, the alignment mechanism is configured so that the positioning pin 22 provided on the substrate transport tray 7 or the protective mask 5 fits in the reference hole 23 provided on the protective mask 5 or the substrate transport tray 7. And a protective mask XYθ stage 24 for holding the substrate 5 and aligning and fixing the protective mask 5 to the substrate transport tray 7 or the substrate 2 fixed to the substrate transport tray 7. The vapor deposition apparatus according to claim 14.

The alignment mechanism includes an imaging unit 17 that captures a reference pattern provided on the substrate 2 and the protective mask 5, and a positional deviation amount of the reference pattern is within a predetermined value based on an image captured by the imaging unit 17. As described above, alignment is performed by the protective mask XYθ stage 24 that holds the protective mask 5, and the protective mask 5 is closely fixed to the substrate transport tray 7 or the substrate 2 fixed to the substrate transport tray 7. 15. The vapor deposition apparatus according to claim 14, wherein the vapor deposition apparatus is configured as described above.

Further, when the substrate 2 and the vapor deposition mask 3 are vapor-deposited in a separated state and a vapor deposition film having a film formation pattern defined by the mask opening 4 of the vapor deposition mask 3 is formed on the substrate 2, this vapor deposition is performed. The shadow SH, which is an inclined portion of the side edge of the film, is G for the gap between the substrate 2 and the vapor deposition mask 3, φx for the lateral opening width of the evaporation port portion of the evaporation source 1, and Assuming that the distance from the vapor deposition mask 3 is TS, the opening width φx of the evaporation port is set small so that the shadow SH does not reach the interval PP between the adjacent vapor deposition films, The vapor deposition apparatus according to any one of claims 1 to 6, wherein the gap G is set to be large.

The vapor deposition apparatus according to any one of claims 1 to 6, wherein the film forming material is an organic material.

In addition, a vapor deposition film having a film formation pattern defined by the mask opening 4 of the vapor deposition mask 3 is formed on the substrate 2 using the vapor deposition apparatus according to any one of claims 1 to 6. The present invention relates to a film forming method characterized by the following.

Since the present invention is configured as described above, even a small deposition mask can be deposited on a large substrate by relatively moving the substrate, the deposition mask, and the evaporation source apart from each other, and the deposition mask is small. Therefore, high-definition mask openings can be realized, distortion problems are less likely to occur, and the non-film-formation part around the film-formation part is covered with a separately provided protective mask. Thus, the present invention provides an excellent vapor deposition apparatus that can reliably prevent vapor deposition and realize high-quality vapor deposition and a film forming method using this vapor deposition apparatus.

That is, a protective mask that protects the film-forming material from adhering to the non-film-forming portion of the substrate is held between the substrate and the vapor deposition mask, for example, adjacent to the substrate, and the substrate and the evaporation source and By depositing a film on the entire surface of the substrate by moving the deposition mask relative to the substrate, the deposition pattern on the substrate is formed with high precision by a small deposition mask that can be manufactured with high precision. Although the structure is such that the film-forming material easily flows into the non-film-formation part because it is separated, the protective mask reliably prevents the film-formation material from entering the non-film-formation part on the substrate. In addition to an excellent vapor deposition apparatus capable of performing high yield deposition and a film forming method using the vapor deposition apparatus, since the protective mask is disposed between the substrate and the vapor deposition mask (gap), the thickness of the protective mask can be increased.

According to a second aspect of the present invention, a protective mask holding device for holding a protective mask is provided with a magnet on a substrate transport tray for transporting a substrate, and the protective mask is attracted and fixed at a predetermined position by the magnet of the substrate transport tray. Since it comprised so, it becomes a vapor deposition apparatus excellent in practicality, such as a mechanical holding mechanism, such as a clamp and a clip becoming unnecessary.

According to a third aspect of the present invention, the substrate transport tray is provided with a magnet driving mechanism for driving the magnet, and the magnet driving mechanism is operated to change the magnetic field acting on the protective mask, Since the protective mask holding device is configured to detach the protective mask with respect to the substrate transport tray, the magnet is rotated, the direction of the magnetic field is changed, or the distance between the magnet and the protective mask is increased, By changing the strength of the magnetic field, the strength of the magnetic field applied to the protective mask can be changed and the protective mask can be attached and detached, so that the protective mask can be easily attached and detached, and the vapor deposition apparatus has excellent practicality.

According to a fourth aspect of the present invention, the substrate transport tray is provided with at least one adhesive chuck or electrostatic chuck, and sucks and fixes the substrate opposite to the substrate film-forming surface. Because of the configuration, there is no need for a mechanism for closely contacting the substrate transport tray from the substrate deposition surface, and fixing the opposite surface of the deposition surface will affect the deposition surface from degassing from adhesive materials and electrostatic charging. Not give.

Also, a mechanical holding mechanism such as a clamp or a clip is unnecessary, and a holding mechanism is not required between the substrate and the vapor deposition mask, so that it is possible to prevent mechanical contact such as a holding mechanism.

Also, since it is adsorbed by the force in the opposite direction against gravity, it is possible to prevent the substrate from being bent by its own weight.

Also, since it is adsorbed by the surface instead of the point, it becomes an excellent vapor deposition apparatus that can prevent the positional deviation between the substrate transfer tray and the substrate.

According to a fifth aspect of the present invention, the adhesive chuck or the electrostatic chuck has a size corresponding to each region of the film forming unit divided and formed on a plurality of substrates. Since each is provided with a structure in which only the film forming part is sucked and fixed from the back by an adhesive chuck or electrostatic chuck, when there are a plurality of film forming parts on the substrate, a corresponding number of chucks are installed, and the substrate is sucked and fixed. A mechanical holding mechanism such as a clamp or clip is not required, and at least the film formation unit is closely attached and fixed to the substrate transport tray by a chuck, so that the gap with the mask can be accurately maintained, and the gap accuracy of the film formation unit Therefore, it is an excellent vapor deposition apparatus that can prevent the positional deviation of the film formation pattern.

In the invention according to claim 6, the adhesive chuck or the electrostatic chuck has a size corresponding to each region of the film forming portion formed in a plurality of divided portions of the substrate, and at least of these regions. Since the central area is provided at a position to be attracted, the opposite surface of the substrate film forming part is adsorbed and fixed by an adhesive chuck or electrostatic chuck, and the flatness of the substrate film forming part is determined by an adhesive chuck or electrostatic chuck. Because the configuration matches the plane of the chuck, the gap between the substrate film formation surface and the evaporation mask can be kept constant, and displacement of the film formation pattern on the substrate due to fluctuations in the gap between the substrate film formation surface and the evaporation mask can be prevented. It becomes an excellent vapor deposition apparatus capable of

According to a seventh aspect of the present invention, the film formation surface of the substrate that is attracted and fixed by the adhesive chuck or electrostatic chuck provided on the substrate transport tray is held parallel to the vapor deposition mask. Since it is configured, the gap between the substrate film formation surface and the vapor deposition mask is kept constant, and it is possible to reliably prevent the positional deviation of the film formation pattern on the substrate due to the gap variation between the substrate film formation surface and the vapor deposition mask. Vapor deposition equipment.

In the invention according to claim 8, the vapor deposition mask is stretched by applying tension to the substrate side end portion of the mask holder provided between the evaporation source and the substrate, and is applied to the film formation surface of the substrate. Since it is configured to be held in parallel, the mask holder can prevent the deflection of the deposition mask, the gap between the substrate deposition surface and the deposition mask is kept constant, and the substrate due to the gap variation between the substrate deposition surface and the deposition mask. It becomes an excellent vapor deposition apparatus that can prevent the positional deviation of the upper film formation pattern.

In the invention according to claim 9, since the power to be supplied to the electrostatic chuck provided on the substrate transfer tray is supplied from the power source arranged outside the vapor deposition chamber, the substrate transfer The tray does not require a power source, can reduce the weight of the tray, and can be an excellent vapor deposition apparatus that can reliably prevent power interruption during film formation.

In the invention according to claim 10, since the power to be supplied to the electrostatic chuck provided on the substrate transfer tray is supplied from the power source arranged on the substrate transfer tray, the outside of the chamber Therefore, the substrate transport tray can be transported to a plurality of chambers alone, and the external wiring for supplying power is not required, so that an excellent vapor deposition apparatus capable of reducing the apparatus cost can be obtained.

In the invention according to claim 11, since the power supplied from the power source is provided with a power supply mechanism for supplying power to the electrostatic chuck through a conductor portion provided inside the substrate transport tray, the substrate transport tray is provided. By integrating it inside, it is possible to eliminate the need for extra wiring on the substrate transfer tray, and to provide an excellent vapor deposition apparatus capable of preventing the deposition film from adhering to the power supply wiring.

According to a twelfth aspect of the present invention, an external power supply mechanism that supplies power to the power source from the outside of the vapor deposition chamber through a supplied conductor portion provided outside the substrate transfer tray when the film is formed is charged. Because it is configured to supply power to the secondary battery installed in the substrate transport tray in vacuum and not expose the substrate transport tray to the atmosphere, it is not necessary to replace the power supply and the tray can be used continuously. Moreover, it becomes an excellent vapor deposition apparatus capable of preventing adsorption of gas and particles from the atmosphere to the substrate transport tray.

According to a thirteenth aspect of the present invention, an image pickup means for picking up a reference pattern provided on the substrate and the vapor deposition mask, and a positional deviation amount of the reference pattern is within a predetermined value based on an image picked up by the image pickup means. The substrate transport tray or the substrate transport for transporting the substrate into and out of a deposition chamber where the substrate is fixed and the deposition film is deposited on the substrate by performing alignment with an XYθ stage for the deposition mask that holds the deposition mask. Since the protective mask is in close contact with the substrate fixed to the tray, the deposition mask can be accurately aligned with the substrate at a predetermined position, and the film pattern can be prevented from being misaligned. It becomes the outstanding vapor deposition apparatus which can do.

In the invention described in claim 14, the substrate and the protective mask are aligned with respect to the substrate transport tray for transporting the substrate into and out of the deposition chamber for fixing the substrate and depositing the deposited film on the substrate. Since the alignment means is provided, an excellent vapor deposition apparatus capable of accurately aligning the substrate and the protective mask at a predetermined position with respect to the substrate transport tray and reliably preventing the positional deviation of the film formation pattern, Become.

In the invention according to claim 15, the alignment mechanism includes an abutting unit in which at least one corner of the substrate and the protective mask or two adjacent end surfaces abut against an abutting member provided on the substrate transport tray. Since the alignment is performed and the protective mask is configured to be tightly fixed to the substrate transport tray or the substrate fixed to the substrate transport tray, for example, the end surfaces of the substrate and the protective mask are aligned, and the substrate and the protective mask are abutted against each other. Since it can be aligned by pressing it against the member from the facing surface, this alignment can be performed easily with high accuracy, and the deposition material can be prevented from entering the non-deposition part, and the deposition can be prevented from being misaligned. It becomes a device.

According to a sixteenth aspect of the present invention, the alignment mechanism holds the protective mask so that the positioning pins provided on the substrate transport tray or the protective mask can be received in the reference holes provided on the protective mask or the substrate transport tray. Alignment is performed by the protective mask XYθ stage, and the protective mask is configured to be closely fixed to the substrate transport tray or the substrate fixed to the substrate transport tray, so that the reference positions of the substrate transport tray and the protective mask are aligned. Thus, the position of the substrate and the protective mask can be aligned accurately and easily, and the deposition material can be prevented from wrapping around the non-film-formation portion, and the film deposition pattern can be prevented from shifting. .

In the invention according to claim 17, the alignment mechanism includes an imaging unit that images a reference pattern provided on a substrate and a protective mask, and a positional deviation amount of the reference pattern is predetermined based on an image captured by the imaging unit. Since the positioning is performed by the protective mask XYθ stage holding the protective mask so that the value is within the range, and the protective mask is closely fixed to the substrate transfer tray or the substrate fixed to the substrate transfer tray, the imaging is performed. Since the amount of displacement of the image obtained by the means can be measured with high accuracy by image processing, the amount of movement can be fed back to the XYθ stage based on the amount of displacement obtained by image processing. An excellent vapor deposition system that can accurately align the position of the film and prevent the film formation material from entering the non-film formation area. It made.

In the invention described in claim 18, since the film formation pattern formed by the vapor deposition mask does not reach the adjacent film formation pattern, the gap between the substrate and the vapor deposition mask can be widened, and protection is provided between the substrate and the vapor deposition mask. Since a mask can be provided and the adjacent vapor deposition film is not reached in this way, the color deposition in each of the RGB pixels can be prevented, resulting in an excellent vapor deposition apparatus.

In the invention described in claim 19, since the film forming material is an organic material, it can be widely applied not only to organic EL devices but also to vacuum film forming in organic electronics fields such as organic thin film solar cells and organic EL lighting. It becomes a very effective vapor deposition apparatus.

In the twentieth aspect of the invention, a vapor deposition film having a film formation pattern defined by the mask opening of the vapor deposition mask is formed on the substrate using the vapor deposition apparatus according to any one of the first to sixth aspects. Since it is a film formation method to be formed, it can be widely applied not only to organic EL devices but also to vacuum film formation in the field of organic electronics such as organic thin film solar cells and organic EL lighting, and a film formation method using an extremely effective vapor deposition apparatus Become.

It is a description front view of 1st Example. It is a description side view of 1st Example. It is an explanatory top view of the 2nd example. The specific example of the protective mask holding | maintenance apparatus (protective mask fixing means using a magnet) of 2nd Example is shown, (a) rotates a magnet, (b) separates a magnet up and down, (c) is It is explanatory front view which shows the structural example which makes a magnet slide left and right, changes a magnetic force, and attaches / detaches a protective mask. It is a description front view of 3rd Example. It is expansion explanatory drawing of the principal part of 3rd Example. It is a description disassembled perspective view of 3rd Example. (A) is a description top view of 4th Example, (b) is a description front view of 4th Example. It is a description front view of 5th Example. It is a description front view of 6th Example. It is a description perspective view of 7th Example. (A) is a description top view of 8th Example, (b) is a description front view of 8th Example. (A) is a description top view of 9th Example, (b) is a description front view of 9th Example. (A) is a description perspective view of 10th Example, (b) is a description top view of 10th Example. It is a description front view of 11th Example.

Embodiments of the present invention that are considered suitable will be briefly described with reference to the drawings, illustrating the operation of the present invention.

The deposition material evaporated from the evaporation source 1 passes through the mask opening 4 of the deposition mask 3 disposed to face the substrate 2, so that the deposition film having the deposition pattern defined by the mask opening 4 is formed. The film is formed on a film forming portion provided on the film forming surface of the substrate 2. At this time, since the substrate 2 moves relative to the evaporation source 1 and the vapor deposition mask 3 while the substrate 2 and the vapor deposition mask 3 are separated from each other, even the small vapor deposition mask 3 can be vapor-deposited on the large substrate 2. Since the vapor deposition mask 3 may be small, a high-definition mask opening 4 can be realized, and the problem of distortion hardly occurs.

Furthermore, by adopting a configuration in which the non-film forming part around the film forming part of the substrate 2 is covered with a protective mask 5 provided separately, vapor deposition due to wrapping around the non-film forming part is reliably prevented, and the quality is excellent and the yield is high. Vapor deposition can be realized.

Specific Example 1 of the present invention will be described with reference to the drawings.

In this embodiment, as shown in FIG. 1, for example, an evaporation source 1 for heating a crucible (not shown) and ejecting a film forming material is provided. Specifically, for example, a plurality of the evaporation ports are arranged in parallel in the X direction, and further, the evaporation source 1 is arranged in the Y direction of the relative movement direction, and the film forming material is supplied from each evaporation port of each evaporation source 1. The mask opening 4 defines the substrate 2 to be transported in a state of being separated from the vapor deposition mask 3 by the mask opening 4 of the vapor deposition mask 3 which is ejected and fixed to the mask holder 10 provided on the evaporation source 1. The vapor deposition film having the film formation pattern thus formed is formed.

At this time, a protective mask 5 is provided between the substrate 2 and the vapor deposition mask 3 so as to cover the non-film forming portion of the substrate 2, thereby preventing the film forming material from adhering to the non-film forming portion of the substrate 2. It is configured as follows. Specifically, the frame-shaped protective mask 5 which is opened so as to cover the non-film-forming part 29 in the peripheral part of the substrate 2 is opened. The protective mask 5 divided into a plurality of parts may be provided so as to cover each non-film forming portion 29.

Further, for example, on the glass substrate 2 used in the organic EL display device, an electrode wiring pattern of an anode electrode and a cathode electrode, and a circuit pattern such as a thin film transistor (TFT) for driving the organic EL element are formed. These are provided as connection terminals with an external control device for a display device product. When the film forming material adheres to such a region (non-film forming portion), a connection failure occurs in connection with the external control device described above, which causes a significant decrease in product yield.

Therefore, the wiring pattern of these substrates 2 needs to be a non-film forming portion where the film forming material should not adhere. In the conventional mask vapor deposition method in which the substrate and the mask are in close contact, if the substrate size is small, it is possible to cover the non-deposition portion with the vapor deposition mask itself. Substrate (1100mm x 1300mm or later), it is difficult to manufacture a deposition mask corresponding to the substrate size. That is, it is difficult to manufacture a vapor deposition mask with a size that covers the entire surface of the mask opening of the high-definition pattern.

Therefore, in this embodiment, as shown in FIGS. 1 and 2, the vapor deposition mask 3 is set to be short in the movement direction (Y direction) of the substrate 2, and the substrate 2 passes over the vapor deposition mask 3, thereby continuously. The deposited film is formed on the entire surface of the substrate 2.

That is, by providing a moving device that fixes the substrate 2 to the substrate transfer tray 7 and horizontally transfers the substrate 2 in a state of being separated from the vapor deposition mask 3, a high-definition film forming pattern is formed on the entire surface of the large substrate 2 even with the small vapor deposition mask 3. A protective mask 5 is provided between the substrate 2 and the vapor deposition mask 3 separately from the vapor deposition mask 3 so as to cover the non-film formation portion 29 as described above.

In other words, as described above, the substrate 2 is mounted on the vapor deposition mask 3 with a transport device (moving device) that horizontally transports the substrate 2 while maintaining a separation distance from the evaporation source 1 and the vapor deposition mask 3 as described above. Then, the protective mask 5 is relatively transported while maintaining a certain separation distance, and the protective mask 5 is aligned with the glass substrate 2 by an alignment mechanism (not shown, for example, butting or alignment pins), so The arrangement is fixed by a protective mask holding device 6 (not shown) so as to correspond to the film forming section.

Therefore, the substrate 2 and the protective mask 5 arranged so as to face the evaporation source 1 are configured to be deposited by a scanning film forming method in which the substrate 2 and the protective mask 5 move along the Y direction and are continuously deposited.

Here, the protective mask 5 moves at the same speed as the substrate 2, but the protective mask 5 is configured to be relatively aligned and fixed in accordance with the non-film forming portion 29 of the substrate 2. .

As a method for fixing the protective mask 5, a general holding device (for example, a clamp or a clip) can be selected, and this holding device (protective mask fixing means) is provided as a moving device that fixes and transports the substrate 2. The protective mask 5 is arranged and fixed between the substrate 2 and the vapor deposition mask 3 by being provided on the outer periphery of the transfer tray 7. Accordingly, the substrate 2 and the protective mask 5 fixed to the substrate 2 are sequentially transported and separated from the plurality of evaporation sources 1 and the vapor deposition mask 3 by the substrate transport tray 7 to form a film. It is configured to prevent the adhesion to the portion 29 and to achieve a high yield device.

Further, since the vapor deposition mask 3 needs to maintain good flatness with respect to the substrate 2, the vapor deposition mask 3 is attached to a mask frame 10 provided as a mask holder 10 with tension applied in the X direction or Y direction of the vapor deposition mask 3. It is desirable to fix (for example, spot welding). Thereby, good flatness with the substrate 2 can be maintained.

As described above, according to the present embodiment (first embodiment), the protective mask 5 is provided between the substrate 2 and the vapor deposition mask 3 in the film formation in which the evaporation source 1 and the vapor deposition mask 3 and the substrate 2 are relatively moved in a separated state. By providing the above, it is possible to prevent the film forming material from entering the non-film forming portion 29 on the film forming surface of the substrate, and to obtain a high-yield vapor deposition apparatus.

Specific Example 2 of the present invention will be described with reference to the drawings.

The second embodiment shown in FIGS. 3 and 4 is an embodiment in which a protective mask holding device 6 (protective mask fixing means 6) for attaching and detaching the protective mask 5 is configured by a magnet 8 provided on the substrate transport tray 7. 3 and 4 are cross-sectional views of the substrate transfer tray 7 provided with the protective mask fixing means 6. As shown in FIG. 3, the protective mask fixing means 6 by the magnetic force of the present embodiment protects the non-film forming portion 29 of the glass substrate 2 fixed to the substrate transport tray 7 with the film forming surface facing down. The mask 5 is provided, and the protective mask 5 is attracted and fixed to the substrate 2 or the substrate transport tray 7 by the magnet 8 provided in the substrate transport tray 7, and the phenomenon that the film forming material adheres to the non-film forming portion 29 of the substrate 2 It is configured to prevent.

The protective mask 5 is physically held when the substrate transport tray 7 is transported through a plurality of vapor deposition chambers by being attracted and retained by the protective mask fixing means 6 by the magnet 8 provided inside the substrate transport tray 7. Since it is not necessary to provide a mechanism (for example, a clamp or a clip) between the substrate 2 and the vapor deposition mask 3, it is possible to prevent contact with the vapor deposition mask 3 or the like during transportation. Further, since the protective mask 5 is attracted by the magnetic force from the back surface of the substrate 2, the protective mask 5 can be disposed in close contact with the substrate 2, so that a further effect can be realized against the wraparound of the film forming material.

As the protective mask fixing means 6 by the magnetic force disposed on the substrate transport tray 7, for example, a permanent magnet such as a ferrite magnet, a neodymium magnet, a samarium cobalt magnet, or a coil around a magnetic core material is energized temporarily. An electromagnet or the like that generates a magnetic force can be used, but a permanent magnet that does not require power supply from the outside of the vacuum chamber or the inside of the substrate transport tray 7 is desirable. As the shape of the magnet, a disc shape, a columnar shape, a square bar shape, or the like is selected. However, a square shape is desirable for placement on the substrate transport tray 7. Further, a sheet-like magnet may be used to reduce the weight of the substrate transfer tray.

As for the arrangement of the magnet 8, the magnet 8 is arranged inside the substrate transport tray in accordance with the non-film forming portion 29 of the substrate 2, and the protective mask 5 provided according to the non-film forming portion 29 is in close contact with the substrate 2. The structure is fixed. For example, if the substrate 2 is a one-chamfered pattern, the non-film forming portion 29 is only the outer peripheral portion, so it may be provided only on the outer peripheral portion of the substrate transport tray 7, and may be constituted by, for example, one frame-shaped plate. However, it may be divided into a plurality of pieces, each of which may be arranged, and in multi-chamfering, it may be arranged not only at the outer peripheral part but also at the crosspiece part between the panels, or one piece having this crosspiece part It is good also as a board.

In addition, the protective mask 5 is attached / detached by the attaching / detaching mechanism provided in the substrate transfer tray 7 or the vapor deposition chamber. Specifically, as shown in FIG. 4A, the magnet drive mechanism 9 for rotating the permanent magnets 8 provided on the substrate carrying tray 7 by 90 degrees is provided, thereby changing the magnetic field applied to the protective mask 5 to be attached and detached. Let

Further, as shown in FIGS. 4B and 4C, the magnet 8 provided on the substrate transfer tray 7 is protected by a magnet drive mechanism 9 provided with a drive shaft extending and retracting provided on the substrate transfer tray 7. A method may be adopted in which the magnet 10 is moved linearly with respect to the mask 5 so that the distance from the protective mask 5 is increased and the magnetic force is weakened to be attached or detached. Moreover, it is good also as a structure which provides an opening part in the board | substrate conveyance tray 7, inserts an up-and-down raising / lowering mechanism pin in this opening part, and attaches or detaches the protective mask 5 directly.

As described above, according to the present embodiment (second embodiment), since the protective mask fixing means 6 is provided by the magnetic force inside the substrate transport tray 7, the substrate 2 or the substrate transport tray 7 and the protective mask 5 are in close contact with each other. It can be fixed with increased sex. In addition, fixation by magnetic force does not require external control or a power source, and can be continuously formed by moving through a plurality of vapor deposition chambers without misalignment with the substrate 2.

Specific Example 3 of the present invention will be described with reference to the drawings.

5, 6 and 7 are sectional views of the substrate transfer tray 7 provided with the electrostatic chuck 11 according to the present embodiment. As shown in FIG. 5, the electrostatic chuck 11 of the present embodiment is provided inside the substrate transport tray 7 or on the substrate contact surface, and is added to the electrode 27 protected by the insulator 26 as shown in FIG. A negative charge bias is generated, so that reverse charges are induced in the vicinity of the contact surface of the substrate 2, and the charges of the substrate 2 are attracted and attracted and fixed. The glass substrate 2 may bend due to its own weight when the substrate size is increased, and may be broken if only the end surface of the substrate 2 is simply held. Further, the glass substrate 2 constituting the recent display is thin (for example, 0.5 mm thick), and it is difficult to hold the glass substrate 2 by simple support of only the end face of the substrate 2 like the conventional small substrate 2. In this embodiment, since the electrostatic chuck 11 composed of the electrode 27 covered with the insulator 26 is exposed on the surface of the substrate transport tray 7 and directly in contact with the back surface of the substrate 2, the substrate 2 is The entire back surface of the substrate 2 can be sucked and held horizontally on the substrate transport tray 7.

Further, as shown in FIG. 7, when the film forming unit 28 is divided into a plurality of parts on one glass substrate 2, the electrostatic chuck 11 is also divided into a plurality according to the size of the film forming unit 28. In addition, by being divided into a plurality of substrate transfer trays 7 corresponding to the film forming sections 28 of each substrate 2, the deflection due to the substrate weight of the film forming section 28 that requires the highest film forming accuracy is ensured. Therefore, it is possible to adjust the horizontal alignment with the vapor deposition mask 3 with high accuracy, so that highly accurate film formation is possible.

As described above, according to the present embodiment (third embodiment), since the electrostatic chuck 11 is exposed on the surface of the substrate transport tray 7 and directly in contact with the back surface of the substrate 2, the substrate 2 is transported. In the structure in which the entire back surface of the substrate 2 is sucked and held on the tray 7 and the substrate 2 and the evaporation mask 3 of this embodiment are separated from each other, the substrate 2 and the evaporation source 1 are relatively moved. By keeping the distance between and parallel to each other, the pattern position accuracy formed by the vapor deposition mask 3 can be kept good, and a high yield vapor deposition apparatus can be provided.

Specific Example 4 of the present invention will be described with reference to the drawings.

FIG. 8 shows the driving of the electrostatic chuck 11 by the external power supply 13 that supplies power to the storage battery 31 provided on the substrate carrying tray 7 through the connection wiring 30 from the power supply 13 provided outside the electrostatic chuck 11 according to the present embodiment. It is explanatory drawing shown. The electrostatic chuck 11 generates static electricity by applying electric power to the electrode 27 provided on the surface and attracts the substrate 2, so that power is always applied to the electrostatic chuck 11 (electrode 27) when holding the substrate. I have to do it. As shown in FIG. 8, the electrostatic chuck 11 of this embodiment can supply power to the electrostatic chuck 11 from the power supply 13 provided outside the vacuum deposition chamber (deposition chamber) through the connection wiring 30. Therefore, it is possible to control the adsorption force constantly during film formation. The connection wiring 30 is configured to be able to follow when the substrate carrying tray 7 on which the electrostatic chuck 11 is installed moves relative to the evaporation source 1 and the vapor deposition mask 3 and can always realize a stable operation.

Furthermore, the operation of turning on / off the power supply of the electrostatic chuck 11 is necessary for the attachment / detachment of the substrate 2, but the power supply operation is facilitated by providing the power supply 13 outside. If the external power supply 13 is connected to an uninterruptible power supply (not shown) (for example, a lithium ion battery), the power stored in the uninterruptible power supply is supplied even when the power supply 13 is disconnected. In addition, an instantaneous voltage drop or power failure can be prevented from occurring with respect to the electrostatic chuck 11.

As described above, according to this embodiment (fourth embodiment), the power supply 13 for generating the electrostatic force on the electrostatic chuck 11 is provided outside the vacuum chamber. In addition, it is possible to reliably prevent the substrate 2 from dropping or misaligned due to a decrease in the suction force of the electrostatic chuck 11 due to the power reduction, and stably hold the glass substrate 2 by suction. Therefore, it is possible to provide a high-accuracy and high-yield vapor deposition apparatus that maintains the positional accuracy and the separation distance between the vapor deposition mask 3 and the substrate 2 with high accuracy.

Specific Example 5 of the present invention will be described with reference to the drawings.

FIG. 9 illustrates an example of a system in which a storage battery 15 as a power source is provided in the electrostatic chuck 11 according to the present embodiment, and power is supplied through the supplied conductor portion 12.

In a general in-line vapor deposition method, since a plurality of vapor deposition chambers (film deposition chambers) maintained in a vacuum are passed, a consistent electrical wiring cannot be connected to the substrate transport tray 7, and the substrate transport tray 7 is transported alone. It is desirable that Since the electrostatic chuck 11 requires electric power when adsorbing the substrate, the substrate transport tray 7 alone supplies a plurality of vapor depositions by supplying it via the supplied conductor 12 by the storage battery 15 provided on the substrate transport tray 7. It can pass through the chamber (deposition chamber). At this time, the storage battery 15 provided on the substrate transfer tray 7 is arranged in a vacuum shut-off box so that it can be driven even in a vacuum atmosphere. The inside of the vacuum shut-off box is maintained by atmospheric pressure, and in addition to the storage battery, a switch for controlling ON / OFF of the power supply, a drive circuit, and the like are arranged. The switch of this embodiment is placed in a vacuum so that it can be turned ON / OFF in a vacuum. However, a radio can be provided in the vacuum shut-off box, and a switch configuration by communication with the outside may be used. Is done. In addition, as the type of storage battery 15, for example, a nickel-cadmium battery, a nickel metal hydride battery, a lithium ion battery, a small sealed lead battery, etc. can be used, but the self-discharge rate is low, and charging / discharging at the time of substrate adsorption / non-adsorption It is desirable to use a lithium ion battery that does not have the memory effect of reducing the battery capacity due to the voltage drop when the above is repeated. By providing a storage battery 15 as a power source inside the substrate transfer tray 7 as in this embodiment, the entire device has no effect on the electrostatic chuck even when an instantaneous voltage drop or power failure occurs, and external influences The substrate 2 can be held stably without being influenced by the above.

Therefore, according to the present embodiment (fifth embodiment), connection wiring with an external power source in the film forming chamber is unnecessary as compared with the fourth embodiment, and furthermore, each film forming chamber divided by the gate valve. In this case, since it is not necessary to switch the electric connection wiring, the film forming / conveying speed of the substrate 2 adsorbed by the electrostatic chuck 11 can be kept constant, so that a highly productive apparatus can be provided. Furthermore, since it is not affected by external electric power, the electrostatic chuck 11 can operate stably, resulting in a high yield device.

Specific Example 6 of the present invention will be described with reference to the drawings.

FIG. 10 illustrates an example of a system for supplying (charging) electric power to the electrostatic chuck 11 provided with the storage battery 15 in a stock chamber 34 as a non-film forming chamber provided separately from the film forming chamber 33. It is. As in the fifth embodiment, the electrostatic chuck 11 is provided with a storage battery 15 on the back surface of the electrostatic chuck 11, and an electrostatic force is generated in the electrostatic chuck 11 by the electric power supplied from the storage battery 15. Is adsorbed. When film formation is performed for a certain period of time, electric power is consumed from the storage battery 15 by the electrostatic chuck 11.

When the electric power held in the storage battery 15 is consumed, the generation of static electricity becomes unstable and causes the static electricity to disappear. Therefore, it is necessary to feed and charge the storage battery 15 after a certain period of use. In order to charge the storage battery 15, the substrate transfer tray 7 is transferred from the film forming chamber 33 by a transfer robot (not shown) to the stock chamber 34 which is a non-film forming chamber provided with an external power supply mechanism 16 for the electrostatic chuck 11. It is conveyed to. In the stock chamber 34, a power supply 13 provided outside the chamber is connected to a detachable connector 32 provided on the electrostatic chuck 11 through a vacuum inlet provided on the side surface of the chamber. To attach and detach the connector 32, for example, a power feeding unit connected to an external power source is provided at the tip of the expanding and contracting cylinder, and after the electrostatic chuck 11 is held in a fixed position, the cylinder is extended and provided on the electrostatic chuck 11. The battery is charged by contacting with the power feeding unit, and after charging is completed, the cylinder is contracted to complete the charging operation. The stock chamber 34 is configured such that a plurality of stock chambers 34 can be accommodated simultaneously by providing a mechanism capable of moving the substrate transport tray 7 up and down. The charged substrate transport tray 7 is unloaded from the stock chamber 34 and transported to the film forming process when the control mechanism determines that the substrate transport tray 7 is necessary in the film forming chamber 33.

As described above, according to this embodiment (sixth embodiment), the stock chamber 34 is provided adjacent to the film formation chamber 33, and the electrostatic chuck 11 repeatedly adsorbs the substrate 2 during non-film formation. The electrostatic chuck 11 is held by the storage battery 15 that always holds a stable amount of power during film formation by carrying in the substrate transfer tray 7 containing the storage battery 15 in which power is consumed as needed and charging the storage battery 15. In addition, since the substrate transfer tray 7 can be repeatedly charged under vacuum, it is not necessary to take out to the outside, reducing the downtime of production due to the charging time, and high productivity. An apparatus can be provided.

Specific Example 7 of the present invention will be described with reference to the drawings.

FIG. 11 is an explanatory view schematically showing a method for aligning the substrate 2 and the vapor deposition mask 3 according to this embodiment.

In this embodiment, an in-line method that can be easily transported even with a large substrate 2 is used. A tension is applied to a small deposition mask 3 that substantially matches the substrate 2 in the lateral direction but is narrow in the moving direction. In this state, it is fixed to the mask frame 10 (for example, spot welding) to suppress lateral displacement.

In this embodiment, the vapor deposition mask 3 fixed to the mask frame 10 is connected to a vapor deposition mask XYθ stage 25 that is movably provided in the X, Y, and θ directions, for example, called an XYθ stage. The alignment mark provided on the vapor deposition mask 3 is aligned with the alignment mark provided on the substrate 2 with a slight gap provided between the conveyed substrate 2 and the vapor deposition mask 3. In this alignment, the vapor deposition mask 3 is used so that each positional deviation amount is detected by an alignment means having an imaging means 17 (for example, a CCD camera) capable of confirming each alignment mark, and this positional deviation amount is minimized. Is moved by an XYθ stage 25 fixedly supported, and after the substrate 2 and the deposition mask 3 are aligned, the substrate 2 is moved relative to the deposition mask 3 to form a film. The alignment mark provided on the substrate 2 is arranged at a position closest to the vapor deposition mask 3 with respect to the substrate conveyance direction, and completes the alignment before passing through the mask opening 4 of the vapor deposition mask 3. Further, by providing a plurality of or line-shaped alignment marks on the substrate 2 in the transport direction, it is possible to perform a sequential alignment during the transport. In addition, by using an optical sensor (for example, a laser sensor) that measures the gap between the substrate 2 and the vapor deposition mask 3, the substrate surface height and the vapor deposition mask surface height are measured by a plurality of optical sensors provided on the same plane. By accurately calculating the gap from each difference, stable substrate transfer film formation can be performed while preventing contact between the substrate 2 and the vapor deposition mask 3.

Specific Example 8 of the present invention will be described with reference to the drawings.

12 (a) and 12 (b) are explanatory views schematically showing a method for aligning the substrate 2 and the protective mask 3 according to this embodiment.

In the present embodiment, for example, by providing the substrate transport tray 7 with an abutting member 19 on at least one side, the substrate end surface positioned diagonally or in parallel with the abutting member 19 with respect to the end surface of the substrate 2 is used as a cylinder or the like. By providing the abutting means 20 that presses in the direction of the abutting member 19 by the expansion / contraction mechanism, the end surfaces of the substrate 2 and the protective mask 5 can be aligned to perform alignment.

Unlike the vapor deposition mask 3, the protective mask 5 of the present embodiment does not require high-precision alignment, and thus exhibits a sufficient effect even in alignment accuracy with respect to the substrate end surface. Furthermore, since the alignment method is simple, the time required for alignment can be shortened. The substrate 2 is attracted and held by an attracting mechanism (for example, an electrostatic chuck 11) provided on the substrate transport tray 7 in a state of being aligned by an abutting member 19 provided on the substrate transport tray 7. The protective mask 5 is transported from a separate chamber (not shown) by a transport robot, and is configured to be held by, for example, the protective mask XYθ stage 24 provided with the expansion / contraction mechanism. In order to prevent the damage, the substrate 2 and the protective mask 5 are separated from each other, and the protective mask 5 is moved toward the abutting member 19 by an expansion / contraction mechanism to align the substrate 2 and the protective mask 5. After alignment, the substrate 2 and the protective mask 5 are brought into close contact with each other, and the protective mask 5 is attracted and held by the magnet 8 provided on the substrate transfer tray 7. The substrate transfer tray 7 holding the substrate 2 and the protective mask 5 by suction is sequentially transferred to the film formation chamber and formed into a film.

Therefore, according to the present embodiment (eighth embodiment), high-speed alignment is possible, the tact time in in-line film formation can be shortened, and the deposition particles can be more reliably circulated to the non-film formation portion. Can be prevented.

Specific Example 9 of the present invention will be described with reference to the drawings.

FIGS. 13A and 13B are diagrams schematically showing a method of aligning the substrate 2 and the protective mask 5 according to the present embodiment.

In this embodiment, alignment is performed by providing alignment pins 22 on the substrate transport tray 7 and opening 23 as a reference hole in the protective mask 5. The alignment pin 22 and the opening 23 have different tapered shapes, and have a structure for correcting the positional deviation between the alignment pin 22 and the opening 23. The alignment pins 22 are provided on the substrate transport tray 7 on the outer periphery of the substrate 2. The alignment pins 22 are positioned by providing them at two diagonal corners of the substrate transport tray 7. The protective mask 5 is transferred from a separate chamber (not shown) by a transfer robot, and is held on a protective mask stage 24 that is movably provided in the X, Y, and θ directions, which is called an XYθ stage. The protective mask 5 held on the XYθ stage 24 raises the XYθ stage 24 to align the substrate 2 and the protective mask 5 by aligning the opening 23 of the protective mask 5 with the alignment pin 22. 2 and the protective mask 5 are brought into close contact with each other, and the protective mask 5 is attracted and held by the magnet 8 provided on the substrate transfer tray 7. The substrate transfer tray 7 holding the substrate 2 and the protective mask 5 by suction is sequentially transferred to the film formation chamber and formed into a film.

Therefore, according to the present embodiment (the ninth embodiment), finer alignment is possible and the alignment accuracy can be improved as compared with the eighth embodiment. Accordingly, it is possible to further prevent the vapor deposition particles from entering the non-film forming portion.

Specific Example 10 of the present invention will be described with reference to the drawings.

FIGS. 14A and 14B are explanatory views schematically showing a method of aligning the substrate 2 and the protective mask 5 according to the present embodiment.

In the present embodiment, for example, a protective mask XYθ stage 24 called an XYθ stage, which is provided so as to be movable in the X direction, the Y direction, and the θ direction, is provided. And is held by the XYθ stage 24. The substrate 2 is sucked and held by a suction mechanism (for example, an electrostatic chuck 11) provided on the substrate transport tray 7, and an alignment mark provided on the substrate 2 is placed on the substrate transport tray 7 by an imaging means 17 such as a CCD camera. An opening is provided so that it can be confirmed, and the alignment mark of the substrate 2 and the protective mask 5 is recognized by the imaging means 17 through the opening. The alignment mark provided on the protective mask 5 is made to coincide with the alignment mark provided on the substrate 2 with a slight gap provided between the held protective mask 5 and the substrate 2. In this alignment, the alignment means including the imaging means 17 that can confirm each alignment mark is used to detect the amount of misalignment of each, and to minimize the amount of misalignment between the alignment marks of the substrate 2 and the protective mask 5. The protective mask 5 is fixedly supported and moved by the XYθ stage 24. After the alignment of the substrate 2 and the protective mask 5, the XYθ stage 24 is moved up so that the substrate 2 and the protective mask 5 are brought into close contact with each other on the substrate transport tray 7. The protective mask 5 is attracted and held by the magnet 8 provided. The substrate transfer tray 7 holding the substrate 2 and the protective mask 5 by suction is sequentially transferred to the film formation chamber and formed into a film.

Therefore, according to the present embodiment (tenth embodiment), the alignment can be performed with higher accuracy than the ninth embodiment, and the alignment accuracy can be improved. Therefore, it is possible to more reliably prevent the vapor deposition particles from entering the non-film forming portion.

Specific Example 11 of the present invention will be described with reference to the drawings.

FIG. 15 is an explanatory view schematically showing a shadow (SH) generated by the gap amount between the substrate 2 and the vapor deposition mask 3 according to the present embodiment.

When the substrate 2 and the vapor deposition mask 3 are disposed in a separated state and formed into a film, a shadow SH that is an inclined portion at both end portions of the vapor deposition film occurs. In order to prevent this shadow SH from reaching the interval PP between the adjacent deposited films, the gap G can be set large by setting the opening width φx of the evaporation port portion small as represented by the following equation. ing.

Specifically, if the shadow SH is set to 0.03 mm or less, the TS is set to 100 to 300 mm, and the φx is set to 0.5 mm to 3 mm, the gap G can be secured to 1 mm or more. For example, if the TS is 100 mm and the φx is 3 mm, the gap G is 1 mm. If the TS is 100 mm and the φx is reduced to 0.6 mm, the gap G can be 5 mm. Therefore, according to the present embodiment, pixels to be formed are formed by forming a mask pattern in advance according to the size of the gap G between the substrate 2 and the vapor deposition mask 3 and the distance TS between the evaporation source 1 and the vapor deposition mask 3. The shadow SH of the film can be formed with high accuracy without affecting adjacent pixels, and the gap G can be set wide. Therefore, the protective mask 5 can be easily provided, and the film forming material is formed on the substrate film forming surface. It is possible to prevent the film from entering the non-film-formation part, and further to prevent the contact between the substrate 2 and the vapor deposition mask 3, thereby providing a vapor deposition apparatus that enables high yield production.

Note that the present invention is not limited to the first to eleventh embodiments, and the specific configuration of each component can be designed as appropriate.

Claims (20)

1. The film-forming material evaporated from the evaporation source passes through the mask opening of the vapor deposition mask arranged to face the substrate, so that the vapor deposition film having the film formation pattern defined by the mask opening is formed on the substrate. In a vapor deposition apparatus configured to be formed in a film forming unit provided on a film surface, the substrate, the evaporation source, and the vapor deposition mask are relatively moved in a state where the substrate and the vapor deposition mask are separated from each other. A configuration including a moving device, and a protective mask that covers the non-deposition part is provided between the substrate and the deposition mask so that the vapor deposition film does not adhere to the non-deposition part around the film formation part, A vapor deposition apparatus comprising a protective mask holding device that holds the protective mask and moves the substrate relative to the evaporation source and the vapor deposition mask together with the substrate.
2. The protective mask holding device for holding the protective mask is provided with a magnet on a substrate transfer tray for transferring the substrate into and out of a vapor deposition chamber for fixing the substrate and depositing the vapor deposition film on the substrate. The vapor deposition apparatus according to claim 1, wherein the protective mask is configured to be attracted and fixed at a predetermined position by a magnet.
3. The substrate transport tray is provided with a magnet drive mechanism for driving the magnet, and by operating the magnet drive mechanism, the direction of the magnetic field generated by the magnet is changed, or the magnet is moved with respect to the protective mask. 3. The protection mask holding device according to claim 2, wherein the protection mask holding device is configured to change the magnetic field acting on the protection mask to attach and detach the protection mask with respect to the substrate transport tray. Vapor deposition equipment.
4. The substrate transport tray is provided with at least one adhesive chuck or electrostatic chuck, and is configured to suck and fix the substrate opposite to the substrate film-forming surface of the substrate. Item 3. The vapor deposition apparatus according to Item 2.
5. The adhesive chuck or the electrostatic chuck has a size corresponding to each region of the film forming unit divided into a plurality of portions of the substrate, and is provided for each region. 4. The vapor deposition apparatus according to 4.
6. The adhesive chuck or the electrostatic chuck has a size corresponding to each region of the film forming unit divided into a plurality of portions of the substrate, and is provided at a position where at least a central portion of each region is adsorbed. The vapor deposition apparatus according to claim 4, wherein the vapor deposition apparatus is configured as described above.
7. 5. The film forming surface of the substrate that is attracted and fixed by the adhesive chuck or electrostatic chuck provided on the substrate transport tray is configured to be held in parallel to the vapor deposition mask. The vapor deposition apparatus according to any one of 1 to 6.
8. The deposition mask is stretched by applying tension to a substrate side end portion of a mask holder provided between the evaporation source and the substrate, and is held parallel to the film formation surface of the substrate. 7. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured.
9. 7. The apparatus according to claim 4, wherein electric power to be supplied to the electrostatic chuck provided on the substrate transfer tray is supplied from a power source disposed outside the vapor deposition chamber. The vapor deposition apparatus as described in a term.
10. 7. The apparatus according to claim 4, wherein power to be supplied to the electrostatic chuck provided on the substrate transfer tray is supplied from a power source provided on the substrate transfer tray. The vapor deposition apparatus of description.
11. The vapor deposition apparatus according to claim 10, further comprising: a power supply mechanism for supplying electric power supplied from the power source to the electrostatic chuck through a conductor portion provided in the substrate transfer tray.
12. 11. The power supply includes an external power supply mechanism that supplies power from outside the vapor deposition chamber through a supplied conductor portion provided outside the substrate transfer tray when the film is formed. The vapor deposition apparatus of description.
13. An imaging unit that images a reference pattern provided on the substrate and the deposition mask, and an evaporation that holds the deposition mask so that a positional deviation amount of the reference pattern falls within a predetermined value based on an image captured by the imaging unit. Alignment is performed by an XYθ stage for a mask, and the substrate is fixed to the substrate transfer tray for transferring the substrate into or out of a deposition chamber for fixing the substrate and depositing the deposited film on the substrate. The vapor deposition apparatus according to any one of claims 1 to 6, wherein the protective mask is configured to be closely fixed.
14. Alignment means for aligning the substrate and the protective mask with respect to the substrate transport tray for transporting the substrate into and out of a deposition chamber for fixing the substrate and depositing the deposited film on the substrate. The vapor deposition apparatus according to any one of claims 1 to 6, wherein the vapor deposition apparatus is characterized in that:
15. The alignment mechanism aligns at least one corner of the substrate and the protective mask or two adjacent end surfaces with an abutting unit that abuts against an abutting member provided on the substrate transport tray, and the protective mask The vapor deposition apparatus according to claim 14, wherein the vapor deposition apparatus is configured to be closely fixed to the substrate transport tray or the substrate fixed to the substrate transport tray.
16. The alignment mechanism includes an XYθ stage for a protective mask that holds the protective mask so that a positioning pin provided on the substrate transport tray or the protective mask is received in a reference hole provided on the protective mask or the substrate transport tray. The vapor deposition apparatus according to claim 14, wherein the deposition is performed by aligning the protective mask to the substrate transport tray or the substrate fixed to the substrate transport tray.
17. The alignment mechanism includes an imaging unit configured to capture a reference pattern provided on the substrate and the protective mask, and the protection pattern so that a positional deviation amount of the reference pattern is within a predetermined value based on an image captured by the imaging unit. 15. The alignment is performed by the protective mask XYθ stage holding a mask, and the protective mask is configured to be closely fixed to the substrate transfer tray or the substrate fixed to the substrate transfer tray. The vapor deposition apparatus of description.
18. When the substrate and the vapor deposition mask are vapor-deposited in a separated state, and a vapor deposition film having a film formation pattern defined by the mask opening of the vapor deposition mask is formed on the substrate, A certain shadow SH is defined such that the gap between the substrate and the vapor deposition mask is G, the lateral opening width of the evaporation port portion of the evaporation source is φx, and the distance between the evaporation port portion and the vapor deposition mask is TS. It is represented by the following formula, and the configuration is such that the opening width φx of the evaporation port portion is set small and the gap G is set large so that the shadow SH does not reach the interval PP between adjacent vapor deposition films. The vapor deposition apparatus according to any one of claims 1 to 6, wherein:
    

    
19. The vapor deposition apparatus according to any one of claims 1 to 6, wherein the film forming material is an organic material.
20. A deposition film having a deposition pattern defined by the mask opening of the deposition mask is formed on the substrate using the deposition apparatus according to any one of claims 1 to 6. Membrane method.

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