JP2004031502A - Electrostatic attracting device and vacuum treating device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic attracting device which can generate an effective attraction force to a region to be processed such as a device pattern or the like on a substrate without imparting an influence, and to provide a vacuum treating device using the same. <P>SOLUTION: An electrostatic chuck plate 5 of an electrostatic chuck 4 includes a plurality of attracting electrodes 6, 7 provided in a dielectric. A plurality of attracting electrodes 6, 7 are provided in a dielectric. The electrodes 6, 7 have a pair of wide electrodes 61, 71 having substantially identical areas. The wide electrodes 61, 71 of the attracting electrodes 6, 7 have an areal ratio of 4:6 to 6:4. Widths of the electrodes 61, 71 are preferably 2 mm or more. An interval of the wide electrodes 61, 71 is preferably larger than 1 mm. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electrostatic attraction device for attracting and holding a substrate by electrostatic force in an apparatus for performing a process such as film formation on a substrate, and more particularly to an electrostatic attraction device for attracting and holding an insulating substrate.
[0002]
[Prior art]
Generally, in a semiconductor process, for example, an electrostatic chuck (electrostatic chuck) is used as a means for controlling the temperature of a substrate.
2. Description of the Related Art In recent years, an electrostatic suction device that suctions not only a semiconductor substrate such as a silicon wafer but also an insulating substrate has been devised.
[0003]
In the case of such an electrostatic attraction device, the attraction force of the substrate can be increased by forming an attraction electrode with a fine pattern to increase the gradient force. However, to increase the gradient force, it is necessary to increase the electric field gradient. is there.
[0004]
[Problems to be solved by the invention]
However, in the case of an insulating substrate on which no device pattern is formed, such as elementary glass, there is no problem in increasing the electric field. It has been found that an excessively high gradient causes problems such as gate breakdown and change in gate voltage threshold.
[0005]
On the other hand, if the electric field is weakened, dielectric breakdown and the like can be avoided, but the essential attraction force is weakened, which causes a problem that it cannot be used practically.
[0006]
An object of the present invention is to provide an electrostatic attraction device capable of exerting an effective attraction force without affecting a processing target region such as a device pattern on a substrate, and a vacuum processing device using the same. Aim.
[0007]
[Means for Solving the Problems]
The present inventors have made intensive efforts to achieve the above object, and as a result, can solve the above problem by making the electrode portions of the pair of adsorption electrodes provided in the dielectric substantially equal in area and wider. The inventors have found that the present invention has been completed.
[0008]
The invention according to claim 1 for achieving the above object is an electrostatic attraction device having an apparatus main body in which a plurality of attraction electrodes are provided in a dielectric, wherein the attraction electrodes have substantially the same area. This is an electrostatic suction device having a pair of wide electrode portions.
According to a second aspect of the present invention, in the first aspect, the area ratio of the pair of wide electrode portions is 4: 6 to 6: 4.
According to a third aspect of the present invention, in the first or second aspect, the width of the pair of wide electrode portions is 2 mm or more.
According to a fourth aspect of the present invention, in any one of the first to third aspects, an interval between the pair of wide electrode portions is larger than 1 mm.
According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the suction region in the apparatus main body is a device region corresponding to a region where a device pattern of the suction target is formed, and a device of the suction target. A non-device region corresponding to a region where a pattern is not formed, wherein the device region is provided with a wide electrode portion of the suction electrode.
According to a sixth aspect of the present invention, there is provided a vacuum chamber, and the electrostatic attraction device according to any one of the first to fifth aspects provided in the vacuum chamber. This is a vacuum processing apparatus configured to perform a predetermined process on a processing target.
[0009]
In the present invention, since the plurality of adsorption electrodes provided in the dielectric have a pair of wide electrode portions, the electric field gradient does not become unnecessarily large. Are approximately equal, it is possible to secure a necessary suction force.
[0010]
As a result, according to the present invention, it is possible to suppress the influence on various device patterns formed on the suction target while adsorbing the suction target with an appropriate suction force.
[0011]
Further, in the present invention, the area ratio of the pair of wide electrode portions of the suction electrode is 4: 6 to 6: 4, the width of the pair of wide electrode portions is 2 mm or more, and the width of the pair of wide electrode portions is By setting the interval to be larger than 1 mm, it is possible to minimize the influence on various device patterns formed on the suction target while adsorbing the suction target with a more appropriate suction force.
[0012]
Further, in the present invention, if the suction area in the apparatus main body has a device area and a non-device area, and the wide electrode portion of the suction electrode is provided in the device area, various devices formed on the suction target object are provided. While minimizing the influence on the pattern, it is possible to adsorb the adsorption target object with a larger adsorption force.
[0013]
As described above, according to the present invention, there is provided a vacuum processing apparatus capable of performing a smooth processing by exerting an effective suction force without affecting a processing target area such as a device pattern. can do.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of an electrostatic attraction device according to the present invention will be described in detail with reference to the drawings.
FIG. 1 is a diagram showing a schematic configuration of an embodiment of a vacuum processing apparatus according to the present invention.
As shown in FIG. 1, the vacuum processing apparatus 1 of the present embodiment has a vacuum processing tank 2 connected to a vacuum exhaust system (not shown).
[0015]
A susceptor 3 is provided at a lower portion in the vacuum processing tank 2, and an electrostatic chuck (electrostatic chucking device) 4 for sucking and holding a substrate (an object to be sucked) 10 described later is provided above the susceptor 3. Fixed.
[0016]
The electrostatic chuck 4 has an electrostatic chuck plate (apparatus main body) 5 formed in a predetermined shape using a dielectric material such as a ceramic material, for example. Bipolar adsorption electrodes 6 and 7 are provided.
[0017]
Here, the suction electrodes 6 and 7 are connected to connection terminals (not shown) of an electrostatic chuck power supply 8 disposed outside the vacuum processing tank 2.
[0018]
FIG. 2 is a perspective view showing a main configuration of a substrate to be attracted to the electrostatic chuck of the present embodiment, FIG. 3A is a plan view showing a main configuration of the electrostatic chuck, and FIG. FIG. 4 is an explanatory diagram showing a dimensional relationship of electrode portions of a suction electrode of the electrostatic chuck.
[0019]
As shown in FIG. 2, the electrostatic chuck 4 of the present embodiment suctions, for example, a rectangular substrate 10 having a plurality of device patterns (processing target regions) 12 formed on a glass substrate 11. The electrostatic chuck plate 5 has the same shape as the substrate 10 and is formed slightly larger than the substrate 10.
[0020]
The attraction electrodes 6, 7 of the present embodiment have a pair of positive and negative wide electrode portions 61, 71.
The wide electrode portions 61 and 71 are formed in an elongated rectangular shape, and a plurality of the wide electrode portions 61 and 71 are provided at regular intervals along the longitudinal direction of the electrostatic chuck plate 5.
[0021]
In the case of the present invention, the width W of the wide electrode portions 61 and 71 is not particularly limited, but is preferably 2 mm or more, more preferably, from the viewpoint of avoiding the influence on the device pattern 12 of the substrate 10. The size may be determined so as to be approximately half the area of the device region 51 by separating the electrode portions 61 and 71 of the attraction electrodes 6 and 7 from each other by a distance D.
[0022]
The distance D between the wide electrode portions 61 and 71 is not particularly limited, but is preferably larger than 1 mm, more preferably 0.1 mm, from the viewpoint of avoiding the influence on the device pattern 12 of the substrate 10. 1 to 0.5 mm.
[0023]
And the wide electrode parts 61 and 71 are comprised so that each area may become substantially equal.
[0024]
In the case of the present invention, the area ratio of the wide electrode portions 61 and 71 is not particularly limited, but is preferably 4: 6 to 6: 4, and more preferably, from the viewpoint of securing the attraction force. 5: 5.
[0025]
Further, the total area of the suction electrodes 6 and 7 is not particularly limited, but is preferably 70% or more of the total area of the device patterns 12 of the substrate 10 from the viewpoint of securing the suction force.
[0026]
Furthermore, the wide electrode portions 61 and 71 of the suction electrodes 6 and 7 are preferably arranged, for example, in a rotationally symmetric shape so that the suction force is not biased when the substrate 10 is sucked.
[0027]
In a normal case, a protective layer is formed on the surfaces of the adsorption electrodes 6 and 7. In this case, the thickness of the protective layer is not particularly limited, but is preferably 500 μm or less, more preferably 5 to 100 μm, from the viewpoint of securing the attraction force.
[0028]
As described above, according to the present embodiment, since the plurality of adsorption electrodes 6 and 7 provided in the dielectric have the pair of wide electrode portions 61 and 71, the electric field gradient becomes unnecessary. Since the area does not increase and the areas of the pair of wide electrode portions 61 and 71 are substantially equal, a necessary suction force can be secured.
[0029]
As a result, according to the present embodiment, while suppressing the influence on various device patterns 12 formed on the substrate 10, the substrate 10 can be suctioned with an appropriate suction force.
[0030]
According to the present embodiment, a vacuum that does not affect the processing target area such as the device pattern 12 of the substrate 10 and that can perform a smooth processing by exerting an effective suction force. A processing device 1 can be provided.
[0031]
FIG. 4 is a plan view showing a configuration of an electrode according to another embodiment of the present invention. Hereinafter, portions corresponding to those in the above embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
[0032]
As shown in FIG. 4, in the case of the present embodiment, the wide electrode portions 61A and 71A of the suction electrodes 6 and 7 are formed in a nested shape.
[0033]
In the case of the present embodiment, the widths and intervals of the wide electrode portions 61A and 71A of the suction electrodes 6 and 7 are the same as those in the above embodiment.
[0034]
According to the present embodiment having such a configuration, since the electrode portions 61A and 71A of the suction electrodes 6 and 7 are formed in a nested shape, the suction force due to the presence of the positive and negative suction electrodes 6 and 7 is reduced. There is a merit that a difference or a difference in residual adsorption force can be averaged. The other configuration and operation and effect are the same as those of the above-described embodiment, and a detailed description thereof will be omitted.
[0035]
FIG. 5 is a plan view showing a configuration of an electrode according to still another embodiment of the present invention. In the following, portions corresponding to those in the above embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
[0036]
As shown in FIG. 5, in the case of the present embodiment, a wide electrode portion 61B formed in a ring shape and a rectangular wide electrode portion 71B formed inside the wide electrode portion 61B are provided.
[0037]
In the case of the present embodiment, the width, spacing, and the like of the wide electrode portions 61B, 71B of the suction electrodes 6, 7 are the same as those in the above embodiment.
[0038]
According to the present embodiment having such a configuration, since the electrode structure is simple, there is an advantage that manufacturing is easy. The other configuration and operation and effect are the same as those of the above-described embodiment, and a detailed description thereof will be omitted.
[0039]
FIG. 6A is a plan view showing a configuration of a main part of still another embodiment of the present invention, and FIG. 6B is a schematic diagram showing a configuration of an electrode of the embodiment. The same reference numerals are given to portions corresponding to the above-described embodiment, and detailed description thereof will be omitted.
[0040]
FIG. 7A is an explanatory diagram showing a dimensional relationship of a wide electrode portion in a non-device region of the electrostatic chuck. FIG. 7B is an enlarged view of a portion A indicated by a dashed line in FIG. FIG. 4B is an explanatory diagram illustrating a dimensional relationship of a wide electrode portion in a device region of the electrostatic chuck.
[0041]
As shown in FIG. 6A, in the electrostatic chuck 4C of the present embodiment, a region (hereinafter, referred to as “device region”) 51 corresponding to the device pattern 12 of the substrate 10 and a device pattern 12 of the substrate 10 are formed. An electrostatic chuck plate 5 </ b> C divided into a region (hereinafter, referred to as a “non-device region”) 52 corresponding to a region where the electrostatic chuck plate is not formed is provided.
[0042]
As shown in FIG. 6B, the electrostatic chuck plate 5 of the present embodiment is configured such that the device electrodes 51 and the non-device regions 52 have different density structures of the suction electrodes 6 and 7 from each other. . That is, the wide electrode portions 61C and 71C described above are formed in the device region 51 so that the electric field gradient in the device region 51 is smaller than the electric field gradient in the non-device region 52.
[0043]
In this case, the attraction electrodes 6 and 7 are connected in series in the device region 51 and the non-device region 52, respectively, and the width W of the wide electrode portions 61C and 71C of the attraction electrodes 6 and 7 in the device region 51 is non-device. The width is formed to be larger than the width w of the electrode portions 62C and 72C in the region 52.
[0044]
As shown in FIGS. 7A and 7B, in the case of the present invention, the width W of the wide electrode portions 61C and 71C in the device region 51 is not particularly limited. From the viewpoint of avoiding the influence of the ten device patterns 12, the thickness is preferably 1 mm or more, and more preferably 1 to 3 mm.
[0045]
Also, the width w of the electrode portions 62C and 72C in the non-device region 52 is not particularly limited, but is preferably 1 mm or less, more preferably 0.1 mm or less, from the viewpoint of securing the attraction force. 0.3 mm.
[0046]
On the other hand, the shapes of the wide electrode portions 61C and 71C in the device region 51 are not particularly limited. However, when the wide electrode portions 61C and 71C are formed in a rectangular shape as in the example shown in FIG. There is a merit that it is easy to manufacture.
[0047]
On the other hand, the shapes of the electrode portions 62C and 72C in the non-device region 52 are not particularly limited. However, if they are formed in a nested shape as in the example shown in FIG. There is.
[0048]
In the present embodiment, the gap D between the wide electrode portions 61C and 71C in the device region 51 is formed to be larger than the gap d between the electrode portions in the non-device region 52.
[0049]
In the case of the present invention, the distance D between the wide electrode portions 61C and 71C in the device region 51 is not particularly limited, but is preferably larger than 1 mm from the viewpoint of avoiding the influence on the device pattern 12 of the substrate 10. , More preferably 1 to 3 mm.
[0050]
On the other hand, the distance d between the electrode portions 62C and 72C in the non-device region 52 is not particularly limited, but is preferably 1 mm or less, and more preferably 0.1 to 0.3 mm.
[0051]
According to the present embodiment having such a configuration, since the electric field gradient in the device region 51 of the suction electrodes 6 and 7 is reduced, the influence on the device pattern 12 of the substrate 10 is minimized, and The substrate 10 can be attracted by force. The other configuration and operation and effect are the same as those of the above-described embodiment, and a detailed description thereof will be omitted.
[0052]
FIG. 8 is a plan view showing a configuration of an electrode according to still another embodiment of the present invention. Parts corresponding to those of the above embodiment are given the same reference numerals, and a detailed description thereof will be omitted.
[0053]
As shown in FIG. 8, in the case of the present embodiment, in the device region 51 of the electrostatic chuck 4, the electrode portions 61D and 71D of the suction electrodes 6 and 7 are formed in a nested shape.
[0054]
In the case of the present embodiment, the widths and intervals of the electrode portions 61D and 71D in the device region 51 are the same as those in the above embodiment.
[0055]
Further, the width and the interval of the electrode portions 62D and 72D in the non-device region 52 are also the same conditions as in the above embodiment.
[0056]
According to the present embodiment having such a configuration, since the electrode portions 61D and 71D of the suction electrodes 6 and 7 are formed in a nested shape, the suction force due to the presence of the positive and negative suction electrodes 6 and 7 is reduced. There is a merit that a difference or a difference in residual adsorption force can be averaged. The other configuration and operation and effect are the same as those of the above-described embodiment, and a detailed description thereof will be omitted.
[0057]
Note that the present invention is not limited to the above-described embodiment, and various changes can be made.
For example, the shape, size, number, and the like of the wide electrode portion of the suction electrode are not limited to those in the above-described embodiment, and can be appropriately changed according to the processing target region of the substrate.
[0058]
Further, the present invention can be applied to substrates on which various device patterns are formed, and the types of substrates can be applied to various substrates.
[0059]
Furthermore, the present invention can be applied to various vacuum processing apparatuses such as a sputtering apparatus and a CVD apparatus.
[0060]
【The invention's effect】
As described above, according to the present invention, it is possible to minimize the influence on the processing target area such as the device pattern of the substrate while securing the required suction force during electrostatic suction.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an embodiment of a vacuum processing apparatus according to the present invention. FIG. 2 is a perspective view showing a main configuration of a substrate to be attracted to an electrostatic chuck of the embodiment. FIG. 4B is a plan view showing a configuration of a main part of the electrostatic chuck. FIG. 4B is an explanatory view showing a dimensional relationship of an electrode part of a suction electrode of the electrostatic chuck. FIG. 5 is a plan view showing a configuration of an electrode according to still another embodiment of the present invention. FIG. 6 (a) is a plan view showing a main part configuration of still another embodiment of the present invention. FIG. 6B is a schematic view showing the configuration of the electrode of the embodiment. FIG. 7A is an explanatory view showing a dimensional relationship of a wide electrode portion in a non-device region of the electrostatic chuck. (B): Enlarged view of a portion A indicated by a dashed line (b): Dimensions of a wide electrode portion in a device region of the electrostatic chuck Plan view illustrating a configuration of still electrodes according to another embodiment of the illustration 8 the invention showing a relationship between [EXPLANATION OF SYMBOLS]
DESCRIPTION OF SYMBOLS 1 ... Vacuum processing apparatus 2 ... Vacuum tank 4 ... Electrostatic chuck (electrostatic suction apparatus) 5 ... Electrostatic chuck plate (apparatus main body) 6, 7 ... Adsorption electrode 10 ... Substrate (object to adsorb)
61, 71 ... wide electrode part

Claims (6)

An electrostatic suction device having a device main body provided with a plurality of suction electrodes in a dielectric,
An electrostatic attraction device, wherein the attraction electrode has a pair of wide electrode portions having substantially equal areas. 2. The electrostatic chuck according to claim 1, wherein the area ratio of the pair of wide electrode portions is 4: 6 to 6: 4. 3. The electrostatic chuck according to claim 1, wherein the width of the pair of wide electrode portions is 2 mm or more. The electrostatic chuck according to any one of claims 1 to 3, wherein a distance between the pair of wide electrode portions is larger than 1 mm. 5. The suction area in the apparatus body according to claim 1, wherein the suction area includes a device area corresponding to an area where a device pattern of the suction target is formed and an area where the device pattern of the suction target is not formed. And a corresponding non-device region, wherein the device region is provided with a wide electrode portion of the suction electrode. A vacuum chamber,
The electrostatic suction device according to any one of claims 1 to 5 provided in the vacuum chamber,
A vacuum processing apparatus configured to perform a predetermined process on a processing target sucked by the electrostatic suction device.

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