CN111293067B - Film forming apparatus - Google Patents

Film forming apparatus Download PDF

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Publication number
CN111293067B
CN111293067B CN201911161938.0A CN201911161938A CN111293067B CN 111293067 B CN111293067 B CN 111293067B CN 201911161938 A CN201911161938 A CN 201911161938A CN 111293067 B CN111293067 B CN 111293067B
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China
Prior art keywords
region
substrate
film forming
electrostatic chuck
electrode
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CN201911161938.0A
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Chinese (zh)
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CN111293067A (en
Inventor
松本行生
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

The invention relates to an electrostatic chuck, an electrostatic chuck system, a film forming apparatus and method, a suction method and a manufacturing method of an electronic device. The substrate and/or the mask can be stably adsorbed by the electrostatic chuck, and the influence of the electric field of the electrostatic chuck on the film quality and uniformity of film thickness distribution of the film can be reduced. The electrostatic chuck is configured to adsorb a film forming object having a plurality of film forming object regions, and is characterized in that the electrostatic chuck has a first region for adsorbing a region including a region corresponding to the film forming object region in an adsorption surface of the film forming object, and a second region for adsorbing a region between regions corresponding to the plurality of film forming object regions in the adsorption surface of the film forming object, and the electrostatic chuck is configured such that an electrostatic attraction force per unit area of the film forming object in the first region is different from an electrostatic attraction force per unit area of the film forming object in the second region.

Description

Film forming apparatus
Technical Field
The present invention relates to a film forming apparatus.
Background
In the production of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, a film-forming material discharged from a film-forming source of a film-forming device is formed on a substrate through a mask on which a pixel pattern is formed, thereby forming an organic layer and a metal layer.
In a film forming apparatus of an upward film forming method (deposition-up: upward deposition), a film forming source is provided at a lower portion of a vacuum vessel of the film forming apparatus, a substrate is disposed at an upper portion of the vacuum vessel, and film formation is performed on a lower surface of the substrate. In the vacuum chamber of the film forming apparatus of the upward film forming method, since only the peripheral edge portion of the lower surface of the substrate is held by the substrate holder, the substrate is deflected by its own weight, which is one of the main causes of the reduction of the film forming accuracy. In a film forming apparatus other than the upward film forming method, deflection may occur due to the weight of the substrate.
As a method for reducing deflection due to the self weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by sucking the entire upper surface of the substrate with the electrostatic chuck, the deflection of the substrate can be reduced.
Prior art literature
Patent literature
Patent document 1: korean patent laid-open publication No. 2018-0053143
However, in a film forming apparatus using an electrostatic chuck, the uniformity of film quality and film thickness distribution of a film formed on a substrate may be reduced due to an electrostatic field from the electrostatic chuck. For example, when a material having polarity is formed, there may be a case where the film characteristics change due to dielectric polarization caused by an electrostatic field of the electrostatic chuck, or the film thickness distribution becomes uneven. In addition, in the case of an apparatus for forming a film by sputtering, plasma is disturbed by an electrostatic field of an electrostatic chuck, and there is a possibility that the film quality and the film thickness distribution are affected.
Patent document 1 (korean laid-open patent publication No. 2018-0053143) discloses a structure in which film formation is performed in a state in which a substrate and a mask are adsorbed by an electrostatic chuck in which an electrode is formed only in a portion where a shadow mask is formed, but in this case, there is a possibility that an adsorption force of a sufficient magnitude cannot be applied to the substrate and/or the mask. In particular, in the case of film formation using a large-sized substrate and mask, it is difficult to stably adsorb the substrate and mask and form a film having high film quality and uniformity of film thickness distribution in the structure of patent document 1.
Disclosure of Invention
The invention aims to provide an electrostatic chuck, an electrostatic chuck system, a film forming device, a film forming method and a manufacturing method of an electronic device using the film forming method, wherein the electrostatic chuck can be used for stably adsorbing a substrate and/or a mask, and the influence of an electric field of the electrostatic chuck on the film quality and the uniformity of film thickness distribution of a film can be reduced.
Means for solving the problems
An electrostatic chuck according to a first aspect of the present invention is an electrostatic chuck for adsorbing a film formation object having a plurality of film formation object regions, wherein a region for adsorbing the film formation object regions of the film formation object is included in a first region, and a region for adsorbing regions between the plurality of film formation object regions of the film formation object is included in a second region, and the electrostatic chuck is configured such that an electrostatic attraction force to the film formation object in the first region is different from an electrostatic attraction force to the film formation object in the second region.
An electrostatic chuck according to a second aspect of the present invention is an electrostatic chuck for adsorbing a target, wherein the electrostatic chuck has a plurality of first regions arranged in a matrix at predetermined intervals in a first direction parallel to an adsorption surface for adsorbing the target and a second direction parallel to the adsorption surface and intersecting the first direction, and a second region between the plurality of first regions, and the electrostatic chuck is configured such that an electrostatic attraction force to the target in the first region is different from an electrostatic attraction force to the target in the second region.
An electrostatic chuck system according to a third aspect of the present invention is an electrostatic chuck system for adsorbing a film formation object having a plurality of film formation object regions, comprising: an electrostatic chuck having an electrode portion, and a control portion for controlling application of a voltage to the electrode portion, wherein a region of the electrostatic chuck for adsorbing the film formation target region of the film formation target is included in a first region, a region of the electrostatic chuck for adsorbing regions between the plurality of film formation target regions of the film formation target is included in a second region, and the control portion controls such that a voltage applied to the first electrode portion provided in the first region is different from a voltage applied to the second electrode portion provided in the second region.
An electrostatic chuck system according to a fourth aspect of the present invention is an electrostatic chuck system for adsorbing a target, comprising: an electrostatic chuck having an electrode portion, and a control portion for controlling application of a voltage to the electrode portion, wherein the electrostatic chuck has a plurality of first regions arranged in a matrix at predetermined intervals in a first direction parallel to an adsorption surface for adsorbing the adsorbate and a second direction parallel to the adsorption surface and intersecting the first direction, and a second region between the plurality of first regions, and the control portion controls the voltage applied to the first electrode portion provided in the first region to be different from the voltage applied to the second electrode portion provided in the second region.
A film forming apparatus according to a fifth aspect of the present invention is a film forming apparatus for forming a film on a plurality of regions to be formed on a substrate through a mask, the film forming apparatus including at least an electrostatic chuck for sucking the substrate, wherein the electrostatic chuck is an electrostatic chuck according to the first or second aspect of the present invention.
A film forming apparatus according to a sixth aspect of the present invention is a film forming apparatus for forming a film on a plurality of regions to be formed on a substrate through a mask, comprising at least an electrostatic chuck system for sucking the substrate, wherein the electrostatic chuck system is the electrostatic chuck system according to the third or fourth aspect of the present invention.
A seventh aspect of the present invention is a method for adsorbing an adsorbate to an electrostatic chuck, comprising: a first adsorption step of applying a first voltage to an electrode portion of the electrostatic chuck so as to adsorb a first adsorbate, which is a film formation object having a plurality of film formation object regions, to the electrostatic chuck; a second adsorption step of applying a second voltage to the electrode portion so that a second adsorbate is adsorbed to the electrostatic chuck via the first adsorbate; and a step of controlling, after the second adsorption step, a voltage having a magnitude different from a voltage applied to a second electrode portion provided in a second region of the electrostatic chuck so that a region for adsorbing the film formation target region of the first adsorbate is included in the first region and a region for adsorbing a region between the plurality of film formation target regions of the first adsorbate is included in the second region.
A film forming method according to an eighth aspect of the present invention is a film forming method for forming a film of a film forming material on a substrate having a plurality of film forming target regions through a mask, comprising: a first suction step of sucking the substrate to an electrostatic chuck; a second suction step of sucking the mask onto the electrostatic chuck through the substrate; and a step of discharging the film forming material and forming a film of the film forming material on the plurality of film forming target regions of the substrate through the mask in a state where the substrate and the mask are adsorbed on the electrostatic chuck, wherein during at least a part of the film forming step, a voltage lower than a voltage applied to a first electrode portion provided in a first region of the electrostatic chuck and a voltage applied to a second electrode portion provided in a second region of the electrostatic chuck are controlled so that a region for adsorbing the film forming target regions of the substrate is included in the first region and a region for adsorbing regions between the plurality of film forming target regions of the substrate is included in the second region.
A method for manufacturing an electronic device according to a ninth aspect of the present invention is characterized in that the electronic device is manufactured by using the film forming method according to the eighth aspect of the present invention.
Effects of the invention
According to the present invention, the substrate and/or the mask can be stably adsorbed by the electrostatic chuck, and the influence of the electric field of the electrostatic chuck on the film quality and uniformity of the film thickness distribution of the film can be reduced.
Drawings
Fig. 1 is a schematic view of a portion of a manufacturing apparatus for an electronic device.
FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
Fig. 3 (a) to (c) are schematic views of a film forming apparatus according to another embodiment of the present invention.
Fig. 4 (a) is a conceptual diagram of an electrostatic chuck system according to an embodiment of the present invention, and fig. 4 (b) is a schematic top view of the electrostatic chuck system according to an embodiment of the present invention.
Fig. 5 (a) and (b) are schematic cross-sectional views of an electrostatic chuck according to an embodiment of the present invention.
Fig. 6 (a) and (b) are graphs showing voltage control of the electrostatic chuck according to an embodiment of the present invention.
Fig. 7 (a) and (b) are schematic diagrams showing an electronic device.
Description of the reference numerals
11: film forming apparatus
21: vacuum container
22: substrate supporting unit
23: mask support unit
24: electrostatic chuck
41: electrostatic chuck system
42: voltage applying part
43: voltage control unit
101: first region
102: second region
240: electrostatic chuck plate portion
240a: electrode part
240b: dielectric part
Detailed Description
Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the accompanying drawings. However, the following embodiments and examples merely illustrate preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not limited to those described in detail unless specifically stated otherwise.
The present invention can be applied to a device for depositing various materials on a surface of a substrate to form a film, and is preferably applied to a device for forming a thin film (material layer) having a desired pattern by vacuum vapor deposition. The material of the substrate may be any material such as glass, a film of a polymer material, or metal, and the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. The film-forming material may be any material such as an organic material or a metallic material (metal, metal oxide, or the like). The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition: chemical vapor deposition) apparatus, in addition to a vacuum deposition apparatus using heating evaporation. Specifically, the technique of the present invention can be applied to a manufacturing apparatus for various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. Specific examples of the electronic device include a light emitting element, a photoelectric conversion element, and a touch panel. The present invention is preferably applicable to a device for manufacturing an organic light emitting device such as an OLED (Organic Light Emitting Diode: organic light emitting diode) or an organic photoelectric conversion device such as an organic thin film solar cell. The electronic device according to the present invention includes a display device (for example, an organic EL display device) including a light emitting element, an illumination device (for example, an organic EL illumination device), and a sensor (for example, an organic CMOS (Complementary Metal-Oxide-Semiconductor) image sensor) including a photoelectric conversion element.
< apparatus for manufacturing electronic device >
Fig. 1 is a plan view schematically showing a partial structure of a manufacturing apparatus of an electronic device.
The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example. In the case of a display panel for a smart phone, for example, a plurality of device formation regions arranged in a matrix form on a 4.5-generation substrate (about 700 mm. Times.900 mm) or a 6-generation full-size (about 1500 mm. Times.1850 mm) or half-cut-size (about 1500 mm. Times.925 mm) substrate are formed, and after film formation for forming an organic EL element is performed, the substrate is cut out along the regions (scribe regions) between the device formation regions, thereby producing a plurality of small-size panels. In this way, the apparatus for manufacturing an electronic device according to the present embodiment forms a film on a plurality of device regions arranged on a substrate, and thereafter cuts the substrate along regions (scribe regions) between the device regions to manufacture a plurality of electronic devices.
The manufacturing apparatus of an electronic device of the present embodiment generally includes a plurality of group apparatuses 1 and a relay apparatus that connects the group apparatuses 1 to each other.
The group device 1 includes: a plurality of film forming apparatuses 11 for processing (for example, forming a film on) the substrate S, a plurality of mask stockers 12 for accommodating the masks M before and after use, and a transfer chamber 13 disposed at the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stocker 12.
A transfer robot 14 that transfers the substrate S and the mask M is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the passage chamber 15 of the relay device disposed on the upstream side to the film forming device 11. The transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stocker 12. The transfer robot 14 is, for example, a robot having a structure in which a manipulator for holding the substrate S or the mask M is attached to a multi-joint arm.
In the film forming apparatus 11, a film forming material discharged from a film forming source is formed on the substrate S through the mask M. A series of film forming processes such as transfer of the substrate S from the transfer robot 14 or transfer of the substrate S to the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixation of the mask M and the substrate S, and film forming are performed by the film forming apparatus 11.
In a manufacturing apparatus for manufacturing an organic EL display device, the film forming apparatus 11 includes an organic film forming apparatus for forming an organic film by vapor deposition of a film forming material for forming an organic substance on a substrate S and a metallic film forming apparatus for forming a metallic film on the substrate S by vapor deposition or sputtering, depending on the kind of the material to be formed. The film-forming material for forming the organic substance on the substrate S may be formed by sputtering. In a manufacturing apparatus for manufacturing an organic EL display device, which film forming apparatus is disposed at which position is different depending on the laminated structure of organic EL elements to be manufactured, and a plurality of film forming apparatuses 11 for forming films are disposed depending on the laminated structure of organic EL elements. For example, as described later, in the case of an organic EL element, it generally has the following structure: on the substrate S on which the anode is formed, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are laminated in this order, and in order to be able to sequentially form films on these layers, a film forming device 11 adapted thereto is arranged in the transport flow direction of the substrate S.
In the mask stocker 12, a new mask M to be used in the film forming process in the film forming apparatus 11 and the used mask M are separately housed in two cases. The transfer robot 14 transfers the used mask M from the film forming apparatus 11 to the cassette of the mask stocker 12, and transfers a new mask M stored in the other cassette of the mask stocker 12 to the film forming apparatus 11.
The group device 1 is connected to: the passage chamber 15 for transferring the substrate S from the upstream side to the cluster tool 1 in the flow direction of the conveyance of the substrate S, and the buffer chamber 16 for transferring the substrate S having completed the film formation process in the cluster tool 1 to another cluster tool on the downstream side. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the upstream passage chamber 15 and transfers the substrate S to one of the film forming devices 11 (for example, the film forming device 11 a) in the cluster device 1. The transfer robot 14 receives the substrate S, which has been subjected to the film formation process in the group device 1, from one of the plurality of film forming devices 11 (for example, the film forming device 11 b), and transfers the substrate S to the buffer chamber 16 connected to the downstream side.
A swirl chamber 17 for changing the orientation of the substrate S is provided between the buffer chamber 16 and the passage chamber 15. A transfer robot 18 is provided in the swirl chamber 17, and the transfer robot 18 is configured to receive the substrate S from the buffer chamber 16, rotate the substrate S by 180 ° and transfer the substrate S to the passage chamber 15. Thus, the orientation of the substrate S is the same between the upstream group device and the downstream group device, and the substrate processing is facilitated.
The passage chamber 15, the buffer chamber 16, and the swirl chamber 17 are relay devices connecting the group devices, and the relay devices provided on the upstream side and/or the downstream side of the group devices have at least one of the passage chamber, the buffer chamber, and the swirl chamber.
The film forming apparatus 11, the mask stocker 12, the transfer chamber 13, the buffer chamber 16, the spin chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The passage chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as required.
The substrate on which the formation of the plurality of layers constituting the organic EL element is completed is conveyed to a sealing device (not shown) for sealing the organic EL element, a cutting device (not shown) for cutting the substrate into a predetermined panel size, and the like.
In the present embodiment, the structure of the manufacturing apparatus of the electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers is not limited.
For example, the apparatus for manufacturing an electronic device according to an embodiment of the present invention may be a line type (inline type) instead of the group type shown in fig. 1. That is, the substrate S and the mask M may be mounted on a carrier, and the film may be formed while the carrier is transported in a plurality of film forming apparatuses arranged in a row. In addition, a combination of a group type and a wire type may be used. For example, the process may be performed in a group-type manufacturing apparatus, from the step of forming an electrode layer (cathode layer) to the sealing step, the cutting step, and the like, until the organic layer is formed.
The specific configuration of the film forming apparatus 11 will be described below.
< film Forming apparatus >
Fig. 2 and 3 are schematic views showing the structure of the film forming apparatus 11 according to the embodiment of the present invention. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate S is defined as the X direction (first direction), and the length direction (direction parallel to the long side) is defined as the Y direction (second direction). In addition, the rotation angle around the Z axis is denoted by θ.
Fig. 2 shows an example of a vapor deposition film forming apparatus 110 for forming a film on a substrate through a mask by heating a film forming material to evaporate or sublimate the film forming material, as an example of the film forming apparatus 11. The vapor deposition film forming apparatus 110 includes: a vacuum container 21 maintained in a vacuum environment or an inert gas environment such as nitrogen; and a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a film forming source 25 provided inside the vacuum container 21.
The substrate support unit 22 is a mechanism for receiving and holding the substrate S transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a substrate holder.
The mask supporting unit 23 is a mechanism for receiving and holding the mask M conveyed by the conveying robot 14 provided in the conveying chamber 13, and is also called a mask holder.
The mask M has an opening pattern corresponding to a thin film pattern to be formed on the substrate S, and is supported by the mask supporting unit 23. The mask M has: an effective region corresponding to a formation region (device formation region) of the organic EL display panel on the substrate S, and a surrounding region between the effective region and the effective region (corresponding to a scribe line region on the substrate S).
At least one opening for passing particles of the film-forming material is formed in the effective region of the mask M. For example, the mask M for manufacturing an organic EL display panel for a smart phone has: a Fine Metal Mask (Fine Metal Mask) which is a Metal Mask having a Fine opening pattern corresponding to an RGB pixel pattern of an organic EL element formed therein in order to form a light emitting layer of the organic EL element in the organic EL display panel; and an Open Mask (Open Mask) for forming a common layer (hole injection layer, hole transport layer, electron injection layer, etc.) of the organic EL element.
The opening pattern of the mask M is defined by a cut-off pattern that does not pass particles of the film-forming material.
Above the substrate support unit 22, an electrostatic chuck 24 for attracting and fixing the substrate S and/or the mask M by electrostatic attraction is provided. The electrostatic chuck 24 adsorbs and holds the substrate S (first adsorbate) before film formation, and also adsorbs and holds the mask M (second adsorbate) according to the embodiment. After that, for example, film formation is performed in a state where the substrate S (first adsorbate) and the mask M (second adsorbate) are held by the electrostatic chuck 24, and after film formation is completed, the holding of the substrate S (first adsorbate) and the mask M (second adsorbate) by the electrostatic chuck 24 is released.
The electrostatic chuck 24 has a structure in which a circuit such as a metal electrode is embedded in a dielectric or insulator (for example, ceramic material) matrix. The electrostatic chuck 24 may be either a coulomb force type electrostatic chuck or a johnson-rahbek force type electrostatic chuck or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. In the case where the electrostatic chuck 24 is a gradient force type electrostatic chuck, even if the substrate S is an insulating substrate, the electrostatic chuck 24 can be used to satisfactorily absorb the substrate S.
The electrostatic chuck 24 may be formed of one plate or may be formed with a plurality of sub-plates. In the case of forming the circuit by one board, a plurality of circuits may be provided in the circuit, and the electrostatic attraction in one board may be controlled so as to be different depending on the position.
The electrostatic chuck 24 of the present embodiment has a plurality of first regions and a second region between the plurality of first regions. As described later, the electrostatic attraction force per unit area of the first region of the electrostatic chuck 24 that attracts the device forming region (the region to be film-formed) of the substrate S or the effective region of the mask M is configured or controlled to be different from the electrostatic attraction force per unit area of the second region of the electrostatic chuck 24 that attracts the region corresponding to the scribe region of the substrate S or the surrounding region of the mask M.
For example, the first region of the electrostatic chuck 24 is configured or controlled to apply a relatively weaker suction force per unit area to the substrate S and the mask M than the second region.
This reduces the influence of the electric field of the electrostatic chuck 24 on the film quality and uniformity of the film thickness distribution of the film formed in the device formation region (film formation target region), and allows the substrate S to be adsorbed more stably than in the related art.
Although not shown in fig. 2, the following structure may be adopted: by providing a cooling mechanism (e.g., a cooling plate) for suppressing the temperature rise of the substrate S on the side of the electrostatic chuck 24 opposite to the suction surface, deterioration and degradation of the organic material deposited on the substrate S are suppressed.
Although not shown, the film forming source 25 includes: a crucible for accommodating a film-forming material to be formed on the substrate S, a heater for heating the crucible, a shutter for blocking the scattering of the film-forming material toward the substrate S before the evaporation rate from the film-forming source 25 becomes constant, and the like. The film forming source 25 may have various structures according to the application, for example, a point (point) film forming source, a linear (linear) film forming source, or the like. The film forming source 25 is provided so as to be movable in parallel with the film forming surface of the substrate S at least along the long side direction or the short side direction of the substrate S. Thus, the thickness of the film can be made uniform over the entire substrate S. In the case where the vapor deposition film forming apparatus 110 includes two film forming stages in the vacuum vessel 21, the film forming source 25 is provided so as to be movable from one stage to the other along the short side direction of the substrate S. The film formation source 25 may be provided so as to be movable in parallel with the film formation surface of the substrate S at least along the short side direction of the substrate S.
Although not shown in fig. 2, the vapor deposition film forming apparatus 110 includes a film thickness detector and a film thickness calculating unit for measuring the thickness of the film deposited on the substrate S.
A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are constituted by, for example, a motor and a ball screw, or by a motor and a linear guide. The substrate Z actuator 26 is a driving member for raising and lowering (Z-direction movement) the substrate support unit 22. The mask Z actuator 27 is a driving member for raising and lowering (Z-direction movement) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving member for raising and lowering (Z-direction movement) the electrostatic chuck 24.
The position adjustment mechanism 29 is a mechanism for adjusting the relative position of the substrate S and the mask M. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, Y direction, and θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the electrostatic chuck 24 is adjusted in position in the directions X, Y and θ in a state where the substrate S is adsorbed, whereby alignment for adjusting the relative position of the substrate S and the mask M is performed.
An alignment camera 20 for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21 may be provided on the outer upper surface of the vacuum chamber 21 in addition to the actuator and the position adjustment mechanism. In the present embodiment, the alignment camera 20 may be provided at a position corresponding to the diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at positions corresponding to the four corners of the rectangle.
The alignment camera 20 provided in the vapor deposition film forming apparatus 110 of the present embodiment is a fine alignment camera used for adjusting the relative positions of the substrate S and the mask M with high accuracy, and has a narrow viewing angle but high resolution. The vapor deposition film forming apparatus 110 of the present embodiment may have a coarse alignment camera having a relatively wide angle of view and low resolution, in addition to the fine alignment camera 20. The rough alignment camera may be provided at a position corresponding to the centers of the two sides of the rectangular substrate S, mask M, and electrostatic chuck 24 facing each other.
The position adjustment mechanism 29 performs alignment for adjusting the positions of the substrate S (first adsorbate) and the mask M (second adsorbate) by relatively moving the substrate S (first adsorbate) and the mask M (second adsorbate) based on the positional information of the substrate S (first adsorbate) and the mask M (second adsorbate) acquired by the alignment camera 20.
The vapor deposition film forming apparatus 110 includes a control unit 40. The control unit 40 has functions such as conveyance and alignment of the substrate S, control of the film formation source 25, and control of film formation. The control unit 40 may have a function of controlling the application of voltage to the electrostatic chuck 24, that is, a function of a voltage control unit 43 shown in fig. 4 (a) described later.
The control unit 40 may be configured by a computer having a processor, a memory (memory), a storage (storage), an I/O, and the like, for example. In this case, the function of the control section 40 is realized by executing a program stored in a memory or a storage by a processor. As the computer, a general-purpose personal computer may be used, or an embedded computer or PLC (Programmable Logic Controller: programmable logic controller) may be used. Alternatively, part or all of the functions of the control unit 40 may be constituted by a circuit such as an ASIC or FPGA. The control unit may be provided for each film forming apparatus, or one control unit may control a plurality of film forming apparatuses.
Fig. 3 shows a sputtering film forming apparatus 111 as another example of the film forming apparatus 11. Fig. 3 (a) is a schematic view seen from the X-axis direction, fig. 3 (b) is a schematic view seen from the Y-axis direction, and fig. 3 (c) is a schematic view seen from the Z-axis direction. The sputter deposition apparatus 111 of fig. 3 differs from the vapor deposition apparatus 110 of fig. 2 in that the ionized gas particles collide with the target of the deposition material to form particles of the deposition material of the target, and the deposition source is heated by a heater to evaporate and form particles of the deposition material in the deposition source. In fig. 3, components having functions similar to those of the vapor deposition film forming apparatus 110 of fig. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
The sputter film forming device 111 shown in fig. 3 may be, for example, a magnetron sputtering device. The magnetron sputtering apparatus is configured to include a magnet for forming a magnetic field on the surface of a target, and to form an annular magnetic flux in the vicinity of the surface of the target. According to such a configuration, ionization of argon gas or the like is promoted by electrons trapped by the magnetic flux, and plasma is concentrated in the vicinity of the target, whereby the sputtering efficiency of the target can be improved.
The sputter film forming apparatus 111 includes: a vacuum vessel 21 to which an inert gas such as argon is supplied; and rotary target units 31A and 31B as film forming sources disposed to face the substrate S fed into the vacuum chamber 21.
The rotary target units 31A and 31B each include: a cylindrical rotary target 310, a cylindrical cathode 311 to which power is supplied from a power source 32, and a magnet unit 312 that forms a magnetic field on a surface of the rotary target 310 on a side facing the substrate S. The cathode 311 may be integrally formed with the rotary target 310 as a backing tube of the rotary target 310, and the rotary target 310 itself may also function as the cathode 311.
The pair of rotary target units 31A and 31B rotates while relatively moving with respect to the substrate S. In the present embodiment, the pair of rotary target units 31A and 31B rotate while moving in the horizontal direction (direction along the film formation surface of the substrate S) in a state where the substrate S is stationary, thereby forming the target particles on the substrate S. The pair of rotary target units 31A and 31B are arranged in parallel at a predetermined interval in the relative movement direction with respect to the substrate S, and are integrally and simultaneously moved.
By setting targets of the pair of rotary target units 31A and 31B to targets of different materials, the sputter film forming apparatus 111 of the present embodiment can form a 2-layer laminated film by relatively moving the pair of rotary target units 31A and 31B and the substrate S twice.
For example, at the time of forming the first layer (first scanning), the film is formed by one target unit 31A, and the other target unit 31B functions as an anode.
In the film formation of the second layer (second scanning), film formation is performed by the other target unit 31B, and the output voltage from the power supply 32 is controlled so that the one target unit 31A functions as an anode.
In this way, during film formation, one target unit functions as an anode while the other target unit is performing film formation, and therefore, a stable electric field can be maintained regardless of the scanning position of the substrate S, and film formation can be performed with a uniform film thickness over the entire substrate S. However, the sputtering film forming apparatus 111 according to one embodiment of the present invention is not limited to the configuration shown in fig. 3, and the target units may have other numbers (for example, one or three or more).
A pair of guide rails 33 for guiding the rotary target units 31A and 31B are disposed in the horizontal direction on the lower surface side in the vacuum chamber 21. The rotary target units 31A and 31B are movably supported by the guide rail 33 via end blocks 34 supporting both ends thereof.
The rotary target units 31A and 31B have rotation axes parallel to the X axis, and the rotation axes of the respective rotary targets are arranged in parallel at predetermined intervals in the Y axis direction.
Although not particularly shown, the driving mechanism of the end block 34 may be a linear motor, a mechanism using a ball screw or the like that converts the rotational motion of a rotary motor into a linear motion, or the like.
The substrate S and the mask M are sucked to the electrostatic chuck 24 outside the vacuum chamber 21 (carrier or transport device), and are transported into the vacuum chamber 21 by a transport rail (not shown) in a state of being sucked to the electrostatic chuck 24, and are moved to a film forming position. Thus, even if the substrate S and the mask M are large, the substrate S and the mask M can be more stably conveyed into the sputter film forming device 111. In such an embodiment, the film forming apparatus includes: a carrier or transport device having an electrostatic chuck 24, and a sputter film forming device 111.
However, the present invention is not limited to this, and the following structure may be adopted: the substrate S and the mask M are fed into the vacuum chamber 21, and are sucked and held by the electrostatic chuck 24 in the vacuum chamber 21. For example, the substrate S fed into the vacuum chamber 21 may be supported horizontally (parallel to the XY plane) by the substrate supporting unit 22, and the mask M fed into the vacuum chamber 21 may be supported below the substrate S by the mask supporting unit 23. The substrate S supported by the substrate support unit 22 and the mask M supported by the mask support unit 23 in this way are attracted and fixed by the electrostatic chuck 24 provided in the vacuum vessel 21.
The electrostatic chuck 24 according to the embodiment shown in fig. 3 is also configured or controlled such that the electrostatic attraction per unit area of the first region of the electrostatic chuck 24 that attracts the device formation region (film formation target region) of the substrate S or the effective region of the mask M is different from the electrostatic attraction per unit area of the second region of the electrostatic chuck 24 that attracts the scribe region of the substrate S or the surrounding region of the mask M.
For example, the first region of the electrostatic chuck 24 is configured or controlled to apply a relatively weaker suction force per unit area to the substrate S and the mask M than the second region. This reduces turbulence of plasma in the vicinity of the device formation region (film formation target region) of the substrate S due to the electric field of the electrostatic chuck 24, thereby reducing the influence on the uniformity of the film quality and film thickness distribution of the film formed in the device formation region (film formation target region), and enabling more stable adsorption of the substrate S than in the related art.
In fig. 3, the substrate S is stationary and the rotary target units 31A and 31B are horizontally moved relatively, but the present invention is not limited to this, and for example, the substrate S may be horizontally moved and the rotary target units 31A and 31B may be rotated only without being horizontally moved, or the substrate S and the rotary target units 31A and 31B may be formed while being horizontally moved relatively. In addition, although the sputter film forming apparatus 111 including the rotary target unit is described in fig. 3, the present invention is not limited to this, and may be applied to a sputter film forming apparatus including a planar cathode unit having a planar target.
In fig. 2 and 3, the vapor deposition film forming apparatus 110 and the sputtering film forming apparatus 111 are described as an example, but the present invention is not limited thereto, and the present invention is applicable to a film forming apparatus using other film forming methods as long as the substrate S sucked by the electrostatic chuck 24 is formed through the mask M.
< electrostatic chuck System and suction method >
The electrostatic chuck system 41 and the suction method according to the present embodiment will be described with reference to fig. 4 to 6.
Fig. 4 (a) is a conceptual block diagram of the electrostatic chuck system 41 of the present embodiment, and fig. 4 (b) is a schematic top view of the electrostatic chuck 24. Fig. 5 (a) and 5 (b) are schematic cross-sectional views for explaining the structure of the electrostatic chuck 24 according to an embodiment of the present invention.
As shown in fig. 4 (a), the electrostatic chuck system 41 of the present embodiment includes an electrostatic chuck 24, a voltage applying portion 42, and a voltage control portion 43.
The voltage applying section 42 applies a voltage for generating electrostatic attraction to the electrode section of the electrostatic chuck 24.
The voltage control unit 43 controls the magnitude of the voltage applied to the electrode unit from the voltage application unit 42, the timing of start of application of the voltage, the time of maintenance of the voltage, the order of application of the voltage, and the like, in accordance with the progress of the suction process of the electrostatic chuck system 41 or the film forming process of the film forming apparatus 11.
The voltage control unit 43 may control the voltage application to the plurality of sub-electrode units 241, 241', 241", 242, etc. provided for the electrode unit of the electrostatic chuck 24, for example, independently for each sub-electrode unit. In the present embodiment, the voltage control unit 43 is configured separately from the control unit 40 of the film forming apparatus 11, but the present invention is not limited thereto, and the voltage control unit 43 may be incorporated into the control unit 40 of the film forming apparatus 11.
The electrostatic chuck 24 has an electrostatic chuck plate portion 240 having a structure in which a circuit such as a metal electrode is embedded in a matrix of a dielectric or an insulator (e.g., a ceramic material).
The electrostatic chuck plate portion 240 has an electrode portion 240a embedded in an insulator matrix 240c, and a dielectric portion 240b. The electrode portion 240a generates an adsorption force for adsorbing the adsorbate (e.g., the substrate S, the mask M) to the adsorption surface by applying a voltage by the voltage applying portion 42. The dielectric portion 240b is formed of one or more dielectric substances, and is interposed at least between the electrode portion 240a and the adsorption surface. The electrostatic chuck plate portion 240 has a shape corresponding to the shape of the substrate S, for example, a rectangular shape.
As shown in fig. 4 a and 4 b, fig. 5 a and 5 b, the electrostatic chuck 24 includes a plurality of first regions 101 arranged in a matrix with a predetermined interval therebetween, and a plurality of second regions 102 between the plurality of first regions 101, in a first direction (X direction) parallel to an adsorption plane (XY plane) on which the object to be adsorbed (the substrate S or the mask M) is adsorbed, and in a second direction (Y direction) parallel to the adsorption plane and intersecting the first direction (X direction). In the present embodiment, the plurality of first regions 101 correspond to the plurality of sub-electrode portions 241, 241', 241", 242, etc. of the electrode portion 240 a. The second region 102 corresponds to the second sub-electrode portions 241', 241", 242', 242", and the like. The electrode portion 240a of the present embodiment is divided into a plurality of sub-electrode portions along the longitudinal direction (Y direction) of the electrostatic chuck plate portion 240 and/or the width direction (X direction) of the electrostatic chuck plate portion 240a, and includes a plurality of first sub-electrode portions 241 to 249 corresponding to a plurality of device forming regions (film forming target regions) of the substrate S, a plurality of second sub-electrode portions 241', 241", 242', 242", and the like corresponding to scribe line regions of the substrate S, respectively.
As shown in fig. 4 (b), a plurality of second sub-electrode portions 241', 241", 242', 242", etc. are provided between the plurality of first sub-electrode portions 241 to 249 and at the peripheral edge portion of the electrostatic chuck 24 in the X-direction and the Y-direction.
In the present embodiment, the electrostatic chuck 24 is configured or controlled such that the suction force per unit area of the first region in which the plurality of first sub-electrode portions (241 to 249) are provided is smaller than the suction force per unit area of the second region in which the plurality of second sub-electrode portions (241', 241", 242", etc.) are provided. For example, as shown in fig. 4 (b), the electrode portion 240a is configured such that the electrode density is different depending on whether it is a region corresponding to the device formation region or a region corresponding to the scribe line region of the substrate S. In this case, the electrode density can be constituted as follows: even if the voltage applied to the first sub-electrode portion provided in the first region corresponding to the device formation region and the voltage applied to the second sub-electrode portion provided in the second region corresponding to the scribe line region are controlled to be the same, the electrostatic attraction force to the substrate S in the first region is smaller than the electrostatic attraction force to the substrate S in the second region. On the other hand, the electrode portion 240a may be configured to have the same electrode density regardless of the region corresponding to the device formation region of the substrate S or the region corresponding to the scribe line region. In this case, by performing voltage control so that the voltage applied to the first sub-electrode portion provided in the first region corresponding to the device formation region and the voltage applied to the second sub-electrode portion provided in the second region corresponding to the scribe line region are different, the electrostatic attraction to the substrate S in the first region can be controlled so as to be smaller than the electrostatic attraction to the substrate S in the second region.
Each of the first sub-electrode portion and the second sub-electrode portion has a pair of electrodes 44a, 44b to which positive (first polarity) and negative (second polarity) voltages are applied in order to generate electrostatic attraction force. For example, each sub-electrode portion has a first electrode 44a to which a positive voltage is applied and a second electrode 44b to which a negative voltage is applied.
As shown in fig. 4 (b), the first electrode 44a and the second electrode 44b each have a comb shape. For example, the first electrode 44a and the second electrode 44b each have a plurality of comb teeth portions and a base portion connected to the plurality of comb teeth portions. The bases of the electrodes 44a and 44b supply voltage to the comb teeth, and the plurality of comb teeth generate electrostatic attraction force between the electrodes and the body to be attracted. In one sub-electrode portion, the comb-teeth portions of the first electrode 44a are alternately arranged so as to face and mesh with the comb-teeth portions of the second electrode 44b. By forming the comb teeth of the electrodes 44a and 44b so as to face each other and to intersect each other in this way, the interval between the electrodes can be narrowed, and a large uneven electric field can be formed, and the substrate S can be stably attracted by a gradient force.
In the present embodiment, the electrodes 44a, 44b of the sub-electrode portions 241, 241', 241", 242, etc. of the electrostatic chuck 24 are described as having a comb shape, but the present invention is not limited thereto, and may have various shapes as long as electrostatic attraction can be generated between them and the object to be adsorbed.
The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in fig. 4 (b), the electrostatic chuck 24 of the present embodiment may have a plurality of suction portions 141, 141', 141", 142, etc. corresponding to a plurality of sub-electrode portions 241, 241', 241", 242, etc.
The suction portion is provided so as to be divided in the longitudinal direction (Y-axis direction) and the width direction (X-axis direction) of the electrostatic chuck 24, but the suction portion is not limited thereto, and may be provided so as to be divided only in the longitudinal direction or the width direction of the electrostatic chuck 24. The plurality of suction portions may be constituted by physically one plate having a plurality of sub-electrode portions, or may be constituted by physically dividing a plurality of plates each having one or more sub-electrode portions.
In the embodiment shown in fig. 4 (b), the plurality of suction portions correspond to the plurality of sub-electrode portions, respectively, but one suction portion may correspond to the plurality of sub-electrode portions.
For example, by controlling the application of the voltages to the plurality of first sub-electrode portions 241 to 249 by the voltage control portion 43, it is possible to configure one first suction portion by three first sub-electrode portions 241, 242, 243 arranged in a direction (Y direction) intersecting the suction progress direction (X direction) of the substrate S. That is, although the three first sub-electrode portions 241, 242, 243 can be independently voltage-controlled, the three first sub-electrode portions 241, 242, 243 can be controlled to simultaneously apply the same voltage to the three first sub-electrode portions 241, 242, 243, thereby allowing the three first sub-electrode portions 241, 242, 243 to function as one adsorption portion. The specific physical structure and circuit structure of the plurality of suction units are not limited as long as the suction of the substrate can be controlled independently in each of the plurality of suction units. The plurality of second sub-electrode portions (241 ', 241", 242', 242", etc.) may constitute one suction portion.
According to the embodiment of the present invention shown in fig. 5 a and 5 b, the electrostatic chuck 24 is configured or controlled such that the electrostatic attraction per unit area of the adsorbate such as the substrate S or the mask M in the first region 101 corresponding to the device formation region (film formation target region) of the substrate S or the effective region of the mask M is smaller than the electrostatic attraction per unit area of the adsorbate in the second region 102 corresponding to the scribe region of the substrate S or the peripheral region of the mask M. That is, the electrostatic chuck 24 is configured or controlled such that an electric field generated from the first sub-electrode portion of the first region 101 is smaller than an electric field generated from the second sub-electrode portion of the second region 102.
This reduces the influence of the electric field on the region of the suction surface of the substrate S corresponding to the region sucked by the first region 101 of the electrostatic chuck 24, that is, the device formation region (film formation target region) of the substrate S, and suppresses the reduction in the film quality and uniformity of the film thickness distribution of the film formed in the device formation region (film formation target region) of the substrate S. In the sputter film forming apparatus 111, the turbulence of plasma in the device formation region (film formation target region) of the substrate S can be further reduced, and therefore, the reduction in the film quality and uniformity of the film thickness distribution of the film formed in the device formation region (film formation target region) of the substrate S can be more significantly suppressed. In addition, not only the suction force can be applied to the region corresponding to the scribe line region of the substrate S, but also the suction force can be applied to the region corresponding to the device formation region of the substrate S, and the large-sized substrate S can be held more stably.
One method of forming the electrostatic chuck 24 such that the electrostatic attraction per unit area in the first region 101 is smaller than that in the second region 102 is to control the voltage applied to the electrode portion 240a forming the electrostatic chuck plate portion 240 so as to be different for each region (each suction portion or each sub-electrode portion).
For example, in the case where the electrostatic chuck plate portion 240 has a plurality of sub-electrode portions and is divided into a plurality of regions (suction portions), a relatively lower voltage can be applied to the first sub-electrode portion that applies suction force to a region corresponding to a device formation region (film formation target region) of the substrate S than to the second sub-electrode portion that applies suction force to a region corresponding to a scribe line region of the substrate S.
That is, according to an embodiment of the present invention, the voltage control unit 43 controls the voltage applied to the first sub-electrode portions 241 to 249 of the first region 101 of the electrostatic chuck 24 that adsorbs the region corresponding to the device formation region (film formation target region) in the adsorption surface of the substrate S or the first adsorption portions 141 to 149 corresponding thereto so as to be smaller than the voltage applied to the second sub-electrode portions 241', 241", 242', 242", etc. of the second region 102 that adsorbs the region corresponding to the scribe line region in the adsorption surface of the substrate S or the second adsorption portions 141', 141", 142', 142", etc. corresponding thereto.
In this way, by making the voltage applied to the first sub-electrode portion of the first region 101 of the electrostatic chuck 24 that adsorbs the region corresponding to the device formation region (film formation target region) in the adsorption surface of the substrate S smaller than the voltage applied to the second sub-electrode portion of the second region 102 of the electrostatic chuck 24 that adsorbs the region corresponding to the scribe region in the adsorption surface of the substrate S, the influence of the electric field of the electrostatic chuck 24 on the device formation region (film formation target region) of the substrate S can be relatively reduced, and the reduction in the adsorption force on the substrate S can be suppressed. In addition, since the voltage control unit 43 performs voltage control so that the voltage applied to the first sub-electrode unit of the first region 101 is different from the voltage applied to the second sub-electrode unit of the second region 102, the effects inherent in the present invention can be achieved, and therefore, the structure of the electrostatic chuck 24 can be simplified.
Fig. 6 (a) shows a time change in the voltage applied to the first sub-electrode portions 241 to 249 of the electrostatic chuck 24, and fig. 6 (b) shows a time change in the voltage applied to the second sub-electrode portions 241', 241", 242', 242", etc. of the electrostatic chuck 24. The horizontal axis represents time and the vertical axis represents voltage. For example, as shown in fig. 6 a, after the electrostatic chuck 24 is attracted to the substrate S and the mask M is attracted, the voltage control unit 43 controls the voltage applied to the plurality of first sub-electrode units to be reduced from the fourth voltage V4 to a fifth voltage V5 smaller than the fourth voltage V4 at the start of the film formation process (t=t5) or during at least a part of the film formation process. In contrast, as shown in fig. 6 (b), the voltage control unit 43 controls the voltage applied to the second sub-electrode unit so that the voltage is maintained at the fourth voltage V4 during the film formation process. Here, the magnitude relation of the voltage when the voltage V5 is smaller than the voltage V4 is a magnitude relation of the voltage such that the electrostatic attraction force per unit area generated by the first sub-electrode portion to which the voltage V5 is applied is smaller than the electrostatic attraction force per unit area generated by the second sub-electrode portion to which the voltage V4 is applied, and may be different from the magnitude relation of the voltage mathematically depending on conditions such as the polarity of the voltage.
Other methods of forming the electrostatic chuck 24 such that the electrostatic attraction per unit area in the first region 101 is smaller than the electrostatic attraction per unit area in the second region 102 are as follows: the electrode portion 240a and/or the dielectric portion 240b of the electrostatic chuck plate portion 240 are/is made of a material having different electrical characteristics for each region, or are made of the same material having different electrical characteristics. For example, the density of the electrodes constituting the electrode portion 240a may be made different for each region, or the type, thickness, and the like of the dielectric constituting the dielectric portion 240b may be made different for each region. Hereinafter, a specific description will be given with reference to fig. 5 (a) and 5 (b). Fig. 5 (a) is a diagram schematically showing a structure in which the electrostatic attraction force is made different for each region by making the thickness, resistivity, and dielectric constant of the dielectric portion different for each region of the electrostatic chuck 24. Fig. 5 (b) is a diagram schematically showing a configuration in which the electrostatic attraction force is made different for each region by making the electrode density different for each region of the electrostatic chuck 24.
In fig. 5 (a), the dielectric portion 240b of the electrostatic chuck plate portion 240 may be composed of a dielectric substance different for each region, and even the same dielectric substance may have a different thickness. More specifically, in the former case, the dielectric substance constituting the first region 101 of the electrostatic chuck 24 may increase the resistivity and/or may also decrease the dielectric constant as compared to the dielectric substance constituting the second region 102. In the latter case, the thickness of the dielectric portion 240b in the first region 101 of the electrostatic chuck 24 may be thicker than the thickness of the dielectric portion 240b in the second region 102. Here, the "thickness of the dielectric portion 240 b" refers to the distance between the lower surface of the electrode portion and the suction surface of the electrostatic chuck 24 in the regions 101 and 102. In fig. 5 (a), the thickness of the dielectric portion 240b in the first region 101 of the electrostatic chuck 24 is the distance H1 between the lower surface of the first sub-electrode portion 241 and the suction surface 240c of the electrostatic chuck 24, and the thickness of the dielectric portion 240b in the second region 102 of the electrostatic chuck 24 is the distance H2 between the lower surface of the second sub-electrode portion 241' and the suction surface 240c of the electrostatic chuck 24. In addition, in fig. 5 (a), the resistivity of the dielectric portion 240b1 in the first region 101 of the electrostatic chuck 24 is greater than the resistivity of the dielectric portion 240b2 in the second region 102 of the electrostatic chuck 24. In addition, in fig. 5 (a), the dielectric constant of the dielectric portion 240b1 in the first region 101 of the electrostatic chuck 24 is smaller than the dielectric constant of the dielectric portion 240b2 in the second region 102 of the electrostatic chuck 24. In fig. 5 (a), for convenience of explanation, the above-described example in which all conditions of the thickness of the dielectric portion, the resistivity of the dielectric substance, and the permittivity of the dielectric substance are made different in the first region 101 and the second region 102 has been described, but the combination of the different conditions is not limited by making at least one condition different for each region and making the electrostatic absorption force different for each region.
According to such an embodiment, even if the same voltage is applied to the electrode of the electrode portion 240a independently of the region, the electrostatic attraction per unit area becomes smaller in the first sub-electrode portion of the first region 101 than in the second sub-electrode portion of the second region 102. That is, by adjusting the thickness, dielectric constant, and/or resistivity of the dielectric portion 240b, the influence of the electric field from the electrode portion of the electrostatic chuck 24 on the device formation region of the substrate S can be adjusted. In fig. 5 (a), an example is shown in which the structure (for example, electrode density, etc.) of the electrode portion 240a is not made different for each region, but the present invention is not limited to this. For example, the thickness, dielectric constant, or resistivity of the dielectric portion 240a may be different from one region to another, and the electrode density may be different from one region to another.
That is, as schematically shown in fig. 5 (b), the electrodes of the electrode portion 240a constituting the electrostatic chuck plate portion 240 may be provided in such a manner that the electrode density varies depending on the region. More specifically, the electrodes are arranged in such a manner that the electrode density of the first sub-electrode portion 241 in the first region 101 of the electrostatic chuck 24 is smaller than the electrode density of the second sub-electrode portion 241' in the second region 102. For example, as shown in fig. 4 (b), in the case where the sub-electrode portions of the electrode portions 240a of the electrostatic chuck plate portion 240 are each formed of a pair of electrodes having a comb shape, the electrode density of the first region 101 can be reduced as compared with that of the second region 102 by making the interval between the comb teeth portions of the first sub-electrode portion provided in the first region 101 wider than the interval between the comb teeth portions of the second sub-electrode portion provided in the second region 102. That is, in fig. 4 (b), the partial enlarged view a is a view obtained by enlarging the portions of the adjacent first and second sub-electrode portions 244, 244", 247, and the interval d1 between the comb-teeth portions of the first sub-electrode portions 244, 247 is wider than the interval d2 between the comb-teeth portions of the second sub-electrode portion 244". The partial enlarged view B is an enlarged view of the adjacent first and second sub-electrode portions 244, 244', 245, and the spacing d1 between the comb teeth of the first sub-electrode portions 244, 245 is wider than the spacing d2 between the comb teeth of the second sub-electrode portion 244'.
According to such an embodiment of the present invention, even if the same voltage is applied to the electrodes of the electrode portion 240a independently of the region, the electrostatic attraction per unit area of the first sub-electrode portion of the first region 101, which has a relatively small electrode density, becomes smaller, in other words, a smaller electric field is generated, than the second sub-electrode portion of the second region 102. Therefore, the voltage control by the voltage control unit 43 can be made simpler, and the degradation of the film quality and uniformity of the film thickness distribution of the film formed on the film formation target region of the substrate S can be suppressed. In fig. 5 b, the structure (for example, the resistivity and the dielectric constant of the dielectric material) of the dielectric portion 240b is not made different for each region, but the present invention is not limited to this. For example, not only the electrode density but also the resistivity, the dielectric constant, and the like of the dielectric may be different for each region.
In addition, although fig. 4 (b) and 5 (b) show examples in which the electrode density is the same in the entire first region of the electrostatic chuck 24 corresponding to the size of one display panel of the organic EL display device, the present invention is not limited to this, and the electrode density may be different depending on the position in the first region 101 as long as the reduction in the film quality of the film formed in the film formation target region of the substrate S, the reduction in the uniformity of the film thickness distribution, and the disturbance of the plasma on the film formation target region can be reduced. That is, in the example shown in fig. 4b, 5 a, and 5 b, the electrostatic chuck 24 has the plurality of first regions 101 corresponding to the plurality of device formation regions (film formation target regions) of the substrate S, the plurality of suction portions 141, 142 and the like corresponding to the plurality of first regions 101 are constituted by the plurality of first sub-electrode portions 241, 242 and the like, and the electrode densities (the interval d1 between the comb-shaped electrode portions of the pair of comb-shaped electrodes 44a, 44b in the example of fig. 4 b) of the plurality of first sub-electrode portions 241, 242 and the like are the same between the different first sub-electrode portions 241, 242 and the like, but the electrode densities of the first sub-electrode portions 241 and the electrode densities of the first sub-electrode portions 242 may be different, for example. In addition, the electrode density of the first sub-electrode portion is uniform inside each first region. For example, in the example of fig. 4 (b), the interval between the comb-shaped electrodes 44a and 44b is d1 regardless of the position in the first region 101 corresponding to the suction portion 141, but for example, the electrode density of the first sub-electrode portion 241 may be different depending on the position in the first region 101, such as setting the interval between the comb-shaped electrodes to d1a at a certain position in the first region 101 and setting the interval between the comb-shaped electrodes to d1b at another position. The electrode density may be made different for the second sub-electrode portions 241', 242' and the like constituting the suction portions 141', 142' and the like corresponding to the second region 102, similarly, depending on the position in the second region 102. The dielectric portion may have various characteristics (thickness, dielectric constant, resistivity, etc.) depending on the positions in the first region 101 and the second region 102, not limited to the electrode density.
For example, in order to form a plurality of pixels in a region to be film-formed of the substrate S corresponding to the first region 101 of the electrostatic chuck 24, or to form RGB sub-pixels in any one of the pixels, in the case of using an aperture mask or a fine metal mask, there may be both a portion where film formation is not performed by the aperture mask or a cutout portion of the fine metal mask and a portion where film formation is performed corresponding to the aperture portion of the fine metal mask, depending on the position in the region to be film-formed of the substrate S. The electrode density, dielectric properties/thickness, etc. may also vary between these portions. Accordingly, the influence of the electric field of the electrostatic chuck 24 can be adjusted by finely coping with the region where the film is formed on the substrate S and the region other than the region.
The present invention may be configured by combining an embodiment in which a voltage applied to a first sub-electrode portion provided in the first region 101 of the electrostatic chuck 24 is different from a voltage applied to a second sub-electrode portion provided in the second region 102, and an embodiment in which the electrode density of the electrode portion 240a of the electrostatic chuck 24 and various characteristics (thickness, dielectric constant, resistivity, etc.) of the dielectric portion 240b are different in the first region 101 and the second region 102.
< film Forming treatment >
Hereinafter, a film formation method using the adsorption method of the present embodiment will be described.
The transfer robot 14 in the transfer chamber 13 feeds the mask M into the vacuum chamber 21 and supports the mask M on the mask support unit 23, and feeds the substrate S into the vacuum chamber 21 of the film forming apparatus 11 and supports the substrate S on the support portion of the substrate support unit 22.
Next, the electrostatic chuck 24 is lowered toward the substrate S, and after the electrostatic chuck 24 is sufficiently brought into close proximity to or contact with the substrate S, a first voltage V1 is applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24, thereby adsorbing the substrate S (t=t1).
In a state where the suction of the substrate S to the electrostatic chuck 24 is completed (t=t2), the voltages applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24 are reduced to the second voltage V2, respectively.
Next, in a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure the relative positional displacement of the substrate S with respect to the mask M. When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are photographed by the alignment camera 20, thereby measuring the relative positional displacement of the substrate S and the mask M.
As a result of the measurement, when it is found that the relative positional deviation of the substrate S with respect to the mask M exceeds the threshold value, the electrostatic chuck 24 is moved in the horizontal direction (xyθ direction), and the substrate S in a state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (xyθ direction), so that the position of the substrate S with respect to the mask M is adjusted (aligned).
After the alignment process (t=t3), a third voltage V3 is applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24, and the mask M is attracted to the electrostatic chuck 24 through the substrate S. When the suction of the mask M is completed (t=t4), the voltage applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24 is reduced to a fourth voltage V4, which is a suction holding voltage.
According to the adsorption method and the film forming method of the embodiment of the present invention, the substrate S and the mask M are fed into the vacuum chamber 21 of the film forming apparatus 11 and are adsorbed and fixed by the electrostatic chuck 24 provided in the vacuum chamber 21, but the present invention is not limited to this, and for example, the entire carrier may be fed into the vacuum chamber 21 in a state where the substrate S and the mask M are adsorbed and fixed by the electrostatic chuck provided in the carrier (not shown) outside the vacuum chamber 21.
According to an embodiment of the adsorption method and the film forming method of the present invention, the voltage applied to the first sub-electrode portion provided in the first region 101 of the electrostatic chuck 24 is reduced from the fourth voltage V4 to the fifth voltage V5 (< V4) at the start of the film forming process (t=t5) or at least during a part of the film forming process. Thus, the electric field of the first sub-electrode portion of the electrostatic chuck 24 can be reduced to affect the film quality of the film formed on the device formation region of the substrate S, the film thickness distribution, or the plasma distribution on the device formation region of the substrate S, and the fifth voltage V5 is applied to the first sub-electrode portion without turning off the voltage application, so that the total suction force applied to the substrate S by the electrostatic chuck 24 is reduced excessively, and the holding of the substrate S can be prevented from becoming unstable.
According to the adsorption method and other embodiments of the film forming method of the present invention, by forming the dielectric portion of the first region 101 of the electrostatic chuck 24 to have various characteristics (thickness, dielectric constant, resistivity, etc.) and/or electrode density different from those of the second region 102, even if the same voltage is applied to the first sub-electrode portion and the second sub-electrode portion during the film forming process, it is possible to suppress the influence of the electric field from the first sub-electrode portion on the film quality, the film thickness distribution, or the plasma distribution in the vicinity of the device forming region of the substrate S. That is, in such an embodiment, the control of the voltage applied to the first sub-electrode portion of the electrostatic chuck 24 is performed not in accordance with the pattern of fig. 6 (a) but in accordance with the pattern of fig. 6 (b) in the same manner as the second sub-electrode portion. Thus, even if simple voltage control is performed in which the voltage control is not made different for each region, the electric field from the first sub-electrode portion can be suppressed from affecting the film quality of the film formed in the device forming region (film forming target region) of the substrate S, the film thickness distribution, or the plasma distribution in the vicinity of the device forming region of the substrate S.
Next, the film-forming material of the film-forming source 25 is formed on the substrate S through the mask M by heating evaporation or sputtering.
After the film is formed to a desired thickness (t=t6), the voltage applied to the first sub-electrode portion of the electrostatic chuck 24 is reduced from the fifth voltage V5 to the sixth voltage V6, and the voltage applied to the second sub-electrode is reduced from the fourth voltage V4 to the sixth voltage V6, so that the mask M is separated first.
Next, a voltage of zero (0) or a polarity opposite to that of the attraction is applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24, and the substrate S is separated from the electrostatic chuck 24. The separation and adsorption of the substrate S and the mask M may be performed in the vacuum chamber 21 or outside the vacuum chamber according to the embodiment.
In the above description, the film forming apparatus 11 is configured to perform film formation in a state where the film formation surface of the substrate S is oriented vertically downward (so-called upward deposition), but the present invention is not limited thereto, and the substrate S may be arranged on the side surface of the vacuum chamber 21 in a vertically standing state and may be configured to perform film formation in a state where the film formation surface of the substrate S is parallel to the gravity direction.
< method for manufacturing electronic device >
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a structure and a manufacturing method of the organic EL display device are exemplified as examples of the electronic device.
First, a manufactured organic EL display device will be described. Fig. 7 (a) shows an overall view of the organic EL display device 60, and fig. 7 (b) shows a cross-sectional structure of one pixel.
As shown in fig. 7 (a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of the organic EL display device 60. Each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes, which will be described in detail later. Here, the pixel means the minimum unit in which a desired color can be displayed in the display area 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is constituted by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B which show different light emission from each other. The pixel 62 is often constituted by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color.
Fig. 7 (B) is a schematic partial cross-sectional view at line a-B of fig. 7 (a). The pixel 62 includes an organic EL element including an anode 64, a hole transport layer 65, one of light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. In the present embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively. The anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64. Further, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 7 (b), the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer according to the structure of the organic EL display element. A hole injection layer having a band structure that allows smooth injection of holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and an anode 64 are formed is prepared.
An acrylic resin is formed on the substrate 63 on which the anode 64 is formed by spin coating, and the insulating layer 69 is formed by patterning the acrylic resin by photolithography so that an opening is formed at a portion where the anode 64 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 patterned with the insulating layer 69 is fed to a first organic material film forming device, and the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 of the display region. The hole transport layer 65 is formed by vacuum deposition. In practice, the hole transport layer 65 is formed to be larger in size than the display region 61, and therefore a high-definition mask is not required.
Next, the substrate 63 formed to the hole transport layer 65 is fed into a second organic material film forming apparatus and held by an electrostatic chuck. The substrate and the mask are aligned, and the mask is held by an electrostatic chuck via the substrate, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where the red light-emitting element is arranged.
In the same manner as the formation of the light-emitting layer 66R, the light-emitting layer 66G that emits green light is formed by a third organic material film forming device, and the light-emitting layer 66B that emits blue light is formed by a fourth organic material film forming device. After the formation of the light-emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a common layer on the light emitting layers 66R, 66G, 66B of three colors.
The substrate formed to the electron transport layer 67 is moved in a film forming apparatus of a metal material to form a film cathode 68. In this case, the film forming apparatus for the metal material may be a film forming apparatus of a heating evaporation system or a film forming apparatus of a sputtering system.
According to the present invention, by making the electrostatic attraction per unit area to the substrate S in the first region 101 of the electrostatic chuck 24 smaller than the electrostatic attraction per unit area to the substrate S in the second region 102 located between the first regions 101, the influence of the electric field of the electrostatic chuck 24 on the film formation target region of the substrate S can be reduced.
Thereafter, the film is transferred to a plasma CVD apparatus to form the film protective layer 70, thereby completing the organic EL display device 60.
When the substrate 63 patterned with the insulating layer 69 is exposed to an environment including moisture and oxygen from the time when the film formation of the protective layer 70 is completed, the light-emitting layer made of the organic EL material may be degraded by the moisture and oxygen. Therefore, in this example, the transfer of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, and may be appropriately modified within the scope of the technical idea.

Claims (19)

1. A film forming apparatus for forming a film on a plurality of film forming regions of a substrate through a mask, characterized in that,
the film forming apparatus has an electrostatic chuck for adsorbing at least the substrate and a vacuum vessel,
the electrostatic chuck can be fed in and out relative to the vacuum vessel in a direction parallel to the suction surface,
the electrostatic chuck has a first region provided with a first electrode portion and a second region provided with a second electrode portion,
the electrostatic chuck is configured such that an electrostatic attraction per unit area of the substrate in the first region is different from an electrostatic attraction per unit area of the substrate in the second region.
2. The film forming apparatus according to claim 1, wherein,
the electrostatic chuck is configured such that an electrostatic attraction force per unit area of the substrate in the first region is smaller than an electrostatic attraction force per unit area of the substrate in the second region.
3. The film forming apparatus according to claim 1, wherein,
the electrode density of the first electrode portion provided in the first region is smaller than the electrode density of the second electrode portion provided in the second region.
4. The film forming apparatus according to claim 1, wherein,
the first electrode portion and the second electrode portion each have a pair of comb-teeth electrodes arranged opposite to each other so that the comb-teeth portions are alternately engaged with each other,
the interval between the comb teeth of the first electrode part is wider than the interval between the comb teeth of the second electrode part.
5. The film forming apparatus according to claim 1, wherein,
the electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the thickness of the dielectric portion in the first region is greater than the thickness of the dielectric portion in the second region.
6. The film forming apparatus according to claim 1, wherein,
the electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the resistivity of the dielectric portion in the first region is greater than the resistivity of the dielectric portion in the second region.
7. The film forming apparatus according to claim 1, wherein,
the electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the dielectric portion in the first region has a dielectric constant smaller than that of the dielectric portion in the second region.
8. The film forming apparatus according to claim 1, wherein,
the film forming apparatus includes a control unit that controls a voltage applied to the first electrode unit to be different from a voltage applied to the second electrode unit during at least a part of a film forming process for the substrate.
9. The film forming apparatus according to claim 1, wherein,
the substrate has a plurality of film formation target regions,
The first region adsorbs a region of the substrate including the film formation target region,
the second region adsorbs a region between the plurality of film formation target regions of the substrate.
10. A film forming apparatus for forming a film on a plurality of film forming regions of a substrate through a mask, characterized in that,
the film forming apparatus has an electrostatic chuck for adsorbing at least the substrate and a vacuum vessel,
the electrostatic chuck can be fed in and out relative to the vacuum vessel in a direction parallel to the suction surface,
the electrostatic chuck has a plurality of first regions arranged in a matrix at predetermined intervals and a second region between the plurality of first regions in a first direction parallel to a suction surface for sucking the substrate and a second direction parallel to the suction surface and intersecting the first direction,
the electrostatic chuck is configured such that an electrostatic attraction per unit area of the substrate in the first region is different from an electrostatic attraction per unit area of the substrate in the second region.
11. The film forming apparatus according to claim 10, wherein,
the electrostatic chuck is configured such that an electrostatic attraction force per unit area of the substrate in the first region is smaller than an electrostatic attraction force per unit area of the substrate in the second region.
12. The film forming apparatus according to claim 10, wherein,
the electrostatic chuck includes an electrode portion including a first electrode portion disposed in the first region and a second electrode portion disposed in the second region,
the electrode density of the first electrode portion provided in the first region is smaller than the electrode density of the second electrode portion provided in the second region.
13. The film forming apparatus according to claim 12, wherein,
the first electrode portion and the second electrode portion each have a pair of comb-teeth electrodes arranged opposite to each other so that the comb-teeth portions are alternately engaged with each other,
the interval between the comb teeth of the first electrode part is wider than the interval between the comb teeth of the second electrode part.
14. The film forming apparatus according to claim 12, wherein,
the electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the thickness of the dielectric portion in the first region is greater than the thickness of the dielectric portion in the second region.
15. The film forming apparatus according to claim 12, wherein,
The electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the resistivity of the dielectric portion in the first region is greater than the resistivity of the dielectric portion in the second region.
16. The film forming apparatus according to claim 12, wherein,
the electrostatic chuck includes a dielectric portion interposed at least between the first and second electrode portions and a suction surface for sucking the substrate,
the dielectric portion in the first region has a dielectric constant smaller than that of the dielectric portion in the second region.
17. The film forming apparatus according to any one of claims 1 to 16, wherein,
the film forming apparatus further includes a film forming source disposed in the vacuum vessel,
the film forming source is movable relative to the substrate along a long side direction or a short side direction of the substrate.
18. The film forming apparatus according to claim 17, wherein,
the film forming source includes a housing mechanism that houses a film forming material and a heating mechanism that heats the film forming material.
19. The film forming apparatus according to claim 17, wherein,
The film forming source includes a target for sputtering.
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