JP2020090721A - Electrostatic chuck, electrostatic chuck system, film deposition apparatus, attraction method, film deposition method, and method of manufacturing electronic device - Google Patents

Abstract

To reduce an influence of an electric field of an electrostatic chuck on uniformity of film quality and film thickness distributions of a film while stably attracting a substrate and/or a mask by the electrostatic chuck.SOLUTION: The present invention relates to an electrostatic chuck for attracting an object of film deposition having a plurality of object regions of film deposition, and the electrostatic chuck has a first region for attracting a region, including a region corresponding to a film deposition object region, of an attraction surface of a film deposition object, and a second region for attracting a region between regions, corresponding to a plurality of film deposition object regions, of the attraction surface of the film deposition object, electrostatic attraction per unit area for the film deposition object in the first region being different from electrostatic attraction per unit area for the film deposition object in the second region.SELECTED DRAWING: Figure 4

Description

The present invention relates to an electrostatic chuck, an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method, and an electronic device manufacturing method.

In the manufacture of an organic EL display device (organic EL display), film formation emitted from a film formation source of a film formation device when forming an organic light emitting element (organic EL element; OLED) constituting the organic EL display device. The material is deposited over the substrate through the mask in which the pixel pattern is formed, so that the organic layer and the metal layer are formed.

In an upward film forming system (deposition up), a film forming source is provided below a vacuum container of the film forming device, a substrate is arranged above the vacuum container, and a film is formed on a lower surface of the substrate. In the vacuum container of such an upward film forming type film forming apparatus, the substrate is held only by the peripheral portion of the lower surface of the substrate by the substrate holder, so that the substrate bends due to its own weight, which is one of the causes of deterioration in film forming accuracy. It is a factor. Even in a film forming apparatus other than the upward film forming method, the substrate may be bent due to its own weight.

As a method for reducing the bending of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, by bending the entire upper surface of the substrate with the electrostatic chuck, the bending of the substrate can be reduced.

Korean Patent Publication No. 2018-0053143

However, in a film forming apparatus using an electrostatic chuck, the film quality of the film formed on the substrate and the uniformity of the film thickness distribution may deteriorate due to the electrostatic field from the electrostatic chuck. For example, when forming a material having polarity, the characteristics of the film may change or the film thickness distribution may become non-uniform due to dielectric polarization due to the electrostatic field of the electrostatic chuck. Further, in the case of an apparatus for forming a film by sputtering, the plasma may be disturbed by the electrostatic field of the electrostatic chuck, which may affect the film quality and film thickness distribution.

Japanese Patent Laid-Open No. 2018-0053143 discloses a configuration in which film formation is performed in a state in which a substrate and a mask are attracted by an electrostatic chuck in which an electrode is formed only in a portion where a shadow mask is formed. However, in this case, there is a possibility that a sufficiently large attraction force cannot be applied to the substrate and/or the mask. In particular, when a film is formed using a large-sized substrate and a mask, the configuration of Patent Document 1 forms a film having a high film quality and a uniform film thickness distribution while stably adsorbing the substrate and the mask. Membrane becomes difficult.

The present invention is an electrostatic chuck capable of reducing the influence of the electric field of the electrostatic chuck on the film quality of the film and the uniformity of the film thickness distribution while stably adsorbing the substrate and/or the mask by the electrostatic chuck, An object is to provide an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method, and an electronic device manufacturing method using the same.

The electrostatic chuck according to the first aspect of the present invention is an electrostatic chuck for adsorbing a film formation target having a plurality of film formation target regions, and adsorbs the film formation target region of the film formation target. A region for adsorbing a region between the plurality of film formation target regions of the film formation target is included in a second region, and the film formation in the first region is performed. It is characterized in that the electrostatic attraction to the target is different from the electrostatic attraction to the film formation target in the second region.

An electrostatic chuck according to a second aspect of the present invention is an electrostatic chuck for adsorbing an object to be adsorbed, comprising: a first direction parallel to an adsorption surface on which the object to be adsorbed is adsorbed; A plurality of first regions arranged in a matrix at a predetermined interval in a second direction that is parallel and intersects the first direction, and a second region between the plurality of first regions. It is characterized in that the electrostatic attraction to the object to be attracted in the first region is different from the electrostatic attraction force to the object to be attracted in the second region.

An electrostatic chuck system according to a third aspect of the present invention is an electrostatic chuck system for adsorbing a film-forming target having a plurality of film-forming target regions, the electrostatic chuck having an electrode part, and the electrode part. A control unit that controls the application of voltage to the electrostatic chuck, and the electrostatic chuck includes a region for adsorbing the film formation target region of the film formation target in a first region, An area for adsorbing an area between the plurality of film formation target areas of the object is included in the second area, and the control section is applied to the first electrode section provided in the first area. The voltage is controlled to be different from the voltage applied to the second electrode portion provided in the second region.

An electrostatic chuck system according to a fourth aspect of the present invention is an electrostatic chuck system for adsorbing an object to be adsorbed, the electrostatic chuck having an electrode portion, and a control for controlling application of a voltage to the electrode portion. The electrostatic chuck has a first direction parallel to the attraction surface on which the object to be attracted is attracted, and a second direction parallel to the attraction surface and intersecting the first direction. A plurality of first regions arranged in a matrix at a predetermined interval, and a second region between the plurality of first regions, wherein the control unit is provided in the first region. The voltage applied to the formed first electrode portion is controlled so as to be different from the voltage applied to the second electrode portion provided in the second region.

A film forming apparatus according to a fifth aspect of the present invention is a film forming apparatus for forming a film on a plurality of film formation target regions of a substrate through a mask, and an electrostatic chuck for adsorbing at least the substrate. And the electrostatic chuck is the electrostatic chuck according to the first aspect or the second aspect of the present invention.

A film forming apparatus according to a sixth aspect of the present invention is a film forming apparatus for forming a film on a plurality of film formation target regions of a substrate through a mask, and an electrostatic chuck system for adsorbing at least the substrate. And the electrostatic chuck system is the electrostatic chuck system according to the third or fourth aspect of the present invention.

An adsorption method according to a seventh aspect of the present invention is a method of adsorbing an object to be attracted to an electrostatic chuck, which has a plurality of film formation target areas by applying a first voltage to an electrode portion of the electrostatic chuck. A first adsorption step of adsorbing a first object to be film-formed on the electrostatic chuck, and a second voltage is applied to the electrode part so that the second object is changed to the first object to be adsorbed. A second adsorption step of adsorbing to the electrostatic chuck via the electrostatic chuck, and a first electrode portion installed in the first area of the electrostatic chuck after the second adsorption step, and a second area of the electrostatic chuck. A step of controlling so that a voltage having a magnitude different from the voltage applied to the installed second electrode portion is applied, for adsorbing the film formation target region of the first adsorbent. The area is included in the first area, and the area for adsorbing the area between the plurality of film formation target areas of the first object to be adsorbed is included in the second area.

A film forming method according to an eighth aspect of the present invention is a film forming method of forming a film forming material on a substrate having a plurality of film formation target areas through a mask, wherein the substrate is attracted to an electrostatic chuck. 1 adsorption step, a second adsorption step of adsorbing the mask to the electrostatic chuck via the substrate, and releasing the film forming material in a state in which the substrate and the mask are adsorbed to the electrostatic chuck. Forming a film of the film forming material on the plurality of film forming target regions of the substrate through the mask, and during at least a part of the film forming step, the electrostatic chuck of Control is performed so that a voltage lower than a voltage applied to the second electrode unit installed in the second region of the electrostatic chuck is applied to the first electrode unit installed in the first region. A region for adsorbing the film formation target region is included in the first region, and a region for adsorbing a region between the plurality of film formation target regions of the substrate is included in the second region. ..

A method of manufacturing an electronic device according to a ninth aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the eighth aspect of the present invention.

According to the present invention, it is possible to reduce the influence of the electric field of the electrostatic chuck on the film quality and the uniformity of the film thickness distribution while stably adsorbing the substrate and/or the mask by the electrostatic chuck.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. 3A to 3C are schematic views of a film forming apparatus according to another embodiment of the present invention. FIG. 4A is a conceptual diagram of an electrostatic chuck system according to an embodiment of the present invention. FIG. 4B is a schematic plan view of the electrostatic chuck system according to the embodiment of the present invention. 5A and 5B are schematic cross-sectional views of the electrostatic chuck according to the embodiment of the present invention. FIG. 6 is a graph illustrating voltage control of an electrostatic chuck according to an exemplary embodiment of the present invention. FIG. 7 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplify preferable configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, in the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, the dimensions, the material, the shape, etc., limit the scope of the present invention to them unless otherwise specified. It isn't meant.

The present invention can be applied to an apparatus that deposits various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus that forms a thin film (material layer) having a desired pattern by vacuum vapor deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and metal can be selected, and the substrate may be, for example, a substrate in which a film of polyimide or the like is laminated on a glass substrate. .. Further, as the film forming material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. The present invention can be applied to a film forming apparatus having a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus as well as a vacuum evaporation apparatus by heating and evaporation. Specifically, the technique of the present invention can be applied to various electronic devices such as semiconductor devices, magnetic devices, and electronic parts, and manufacturing devices for optical parts and the like. Specific examples of the electronic device include a light emitting element, a photoelectric conversion element, a touch panel, and the like. Among others, the present invention is preferably applicable to an apparatus for manufacturing an organic light emitting element such as an OLED (Organic Light Emitting Diode) or an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention includes a display device (for example, an organic EL display device) including a light emitting element, a lighting device (for example, an organic EL lighting device), and a sensor including a photoelectric conversion element (for example, an organic CMOS (Complementary Metal-Oxide)). -Semiconductor) image sensor) is also included.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a partial configuration of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used for manufacturing a display panel of an organic EL display device for a smartphone, for example. In the case of a display panel for a smartphone, for example, a 4.5-generation board (about 700 mm x about 900 mm), a 6-generation full size (about 1500 mm x about 1850 mm) or a half-cut size (about 1500 mm x about 925 mm) board is used. After forming a film for forming an organic EL element in a plurality of device formation regions that are spaced apart in a matrix, the substrate is cut out along a region (scribe region) between the device formation regions. , To make multiple small size panels. As described above, the electronic device manufacturing apparatus according to the present embodiment performs film formation on a plurality of device regions provided side by side on a substrate, and then along the regions (scribe regions) between the device regions. Then, the substrate is cut out to manufacture a plurality of electronic devices.

The electronic device manufacturing apparatus according to the present embodiment generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1.

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform a process (for example, film forming) on a substrate S, a plurality of mask stocking apparatuses 12 that store masks M before and after use, and a transfer chamber 13 arranged in the center thereof. And As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12.

A transfer robot 14 that transfers the substrate S and the mask M is arranged in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is attached to an articulated arm.

In the film forming apparatus 11, the film forming material emitted from the film forming source is formed on the substrate S through the mask M. A series of film forming processes such as transfer of the substrate S from or to the transfer robot 14, adjustment of the relative position of the substrate S and the mask M (alignment), fixing of the mask M and the substrate S, film formation, etc. The film forming apparatus 11 is used.

In the manufacturing apparatus for manufacturing an organic EL display device, the film forming apparatus 11 includes an organic film forming apparatus and a metallic film forming apparatus depending on the type of material to be formed. The film forming apparatus of (1) forms an organic film forming material on the substrate S by vapor deposition, and the metallic film forming apparatus forms a metallic film forming material on the substrate S by vapor deposition or sputtering. The organic film forming material may be formed on the substrate S by sputtering. In a manufacturing apparatus for manufacturing an organic EL display device, what kind of film forming device is arranged at which position depends on the laminated structure of the organic EL element to be manufactured, and depending on the laminated structure of the organic EL element, A plurality of film forming devices 11 for forming the film are arranged. For example, as will be described later, in the case of an organic EL element, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are usually formed on a substrate S on which an anode is formed. Although it has a structure in which layers are sequentially stacked, a film deposition apparatus 11 suitable for the layers is arranged in the flow direction of the transport of the substrate S so that these layers can be sequentially deposited.

In the mask stock device 12, a new mask M used in the film forming process in the film forming device 11 and a used mask M are separately stored in two cassettes. The transfer robot 14 transfers the used mask M from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask M stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

The cluster apparatus 1 includes a pass chamber 15 that transfers the substrate S from the upstream side to the cluster apparatus 1 in the transport flow direction of the substrate S, and a substrate S on which the film formation processing is completed in the cluster apparatus 1 on the downstream side. A buffer chamber 16 for transferring to another cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film forming apparatuses 11 in the cluster apparatus 1 (for example, the film forming apparatus 11a). In addition, the transfer robot 14 receives the substrate S for which the film forming process is completed in the cluster apparatus 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and the buffer connected to the downstream side. It is transported to the chamber 16.

A swirl chamber 17 that changes the direction of the substrate S is installed between the buffer chamber 16 and the pass chamber 15. The swirl chamber 17 is provided with a transfer robot 18 that receives the substrate S from the buffer chamber 16, rotates the substrate S by 180°, and transfers the substrate S to the pass chamber 15. Thereby, the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, and the substrate processing is facilitated.

The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are relay devices that connect the cluster devices, and the relay devices installed on the upstream side and/or the downstream side of the cluster device are the pass chamber, the buffer chamber, and the swirl chamber. Have at least one of the chambers.

The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

The substrate on which the plurality of layers forming the organic EL element have been formed is a sealing device (not shown) for sealing the organic EL element or a cutting device (not shown) for cutting the substrate into a predetermined panel size. (Illustrated) and the like.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and other types of apparatuses and chambers may be included. Also, the arrangement between the chambers is not limited.

For example, the electronic device manufacturing apparatus according to the embodiment of the present invention may be an in-line type instead of the cluster type shown in FIG. That is, the substrate S and the mask M may be mounted on a carrier and film formation may be performed while the carrier is transported through a plurality of film forming apparatuses arranged in a line. Also, a type configuration in which a cluster type and an inline type are combined may be used. For example, the cluster type manufacturing apparatus may be used until the organic layer is formed, and the inline type manufacturing apparatus may be used for the electrode layer (cathode layer) forming step, the sealing step and the cutting step.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film forming device>
2 and 3 are schematic diagrams showing the configuration of the film forming apparatus 11 according to the embodiment of the present invention. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction will be used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the lateral direction (direction parallel to the short side) of the substrate S is the X direction (first direction) and the longitudinal direction (long side is the long side). The parallel direction) is defined as the Y direction (second direction). Further, the rotation angle around the Z axis is represented by θ.

FIG. 2 shows an example of the vapor deposition film forming apparatus 110 that evaporates or sublimes a film forming material by heating to form a film on a substrate through a mask, as an example of the film forming apparatus 11. The vapor deposition film forming apparatus 110 includes a vacuum container 21 that is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 that is provided inside the vacuum container 21, a mask support unit 23, and an electrostatic discharge container. It has a chuck 24 and a film forming source 25.

The substrate support unit 22 is means for receiving and holding the substrate S transported by the transport robot 14 provided in the transport chamber 13, and is also called a substrate holder.

The mask support unit 23 is means for receiving and holding the mask M carried by the carrying robot 14 provided in the carrying chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is supported by the mask supporting unit 23. The mask M has an effective region corresponding to the formation region (device formation region) of the organic EL display panel on the substrate S and a peripheral region (corresponding to the scribe region on the substrate S) between the effective regions. ..

In the effective area of the mask M, at least one opening for passing particles of the film-forming material is formed. For example, a mask M used to manufacture an organic EL display panel for a smartphone has a fine opening corresponding to an RGB pixel pattern of the organic EL element for forming a light emitting layer of the organic EL element in the organic EL display panel. A fine metal mask, which is a patterned metal mask, and a common layer (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.) of an organic EL element are formed. And an open mask used for.

The opening pattern of the mask M is defined by a blocking pattern that does not allow particles of the film-forming material to pass through.

Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate S and/or the mask M by electrostatic attraction is provided. The electrostatic chuck 24 adsorbs and holds the substrate S (first object to be adsorbed) before film formation, and also adsorbs and holds the mask M (second object to be adsorbed) in some embodiments. After that, for example, film formation is performed in a state where the electrostatic chuck 24 holds the substrate S (first object to be adsorbed) and the mask M (second object to be adsorbed), and after the film formation is completed, the substrate S (first object to be adsorbed) is formed. The electrostatic chuck 24 releases the object to be adsorbed) and the mask M (second object to be adsorbed).

The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric or insulator (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. When the electrostatic chuck 24 is a gradient force type electrostatic chuck, even if the substrate S is an insulating substrate, the electrostatic chuck 24 can favorably attract the substrate S.

The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub plates. Further, in the case of being formed by one plate, a plurality of electric circuits may be provided inside and the electrostatic attraction may be controlled so as to be different depending on the position within one plate.

The electrostatic chuck 24 according to the present embodiment has a plurality of first areas and a second area between the plurality of first areas. As will be described later, the electrostatic attractive force per unit area of the first region of the electrostatic chuck 24 attracting the device formation region (deposition target region) of the substrate S or the region corresponding to the effective region of the mask M is the substrate S. The electrostatic attraction force per unit area of the second region of the electrostatic chuck 24 attracting the scribe region or the region corresponding to the peripheral region of the mask M is configured or controlled to be different.

For example, the first region of the electrostatic chuck 24 is configured or controlled so as to apply a relatively weaker adsorption force per unit area to the substrate S or the mask M than the second region.

As a result, the influence of the electric field of the electrostatic chuck 24 on the film quality of the film formed in the device formation region (deposition target region) and the uniformity of the film thickness distribution is reduced, but compared to the conventional technique. Therefore, the substrate S can be more stably adsorbed.

Although not shown in FIG. 2, an organic material deposited on the substrate S is provided by providing a cooling mechanism (for example, a cooling plate) that suppresses the temperature rise of the substrate S on the side opposite to the attracting surface of the electrostatic chuck 24. It may be configured to suppress the deterioration and deterioration of

Although not shown, the film-forming source 25 is a crucible in which a film-forming material to be formed on the substrate S is stored, a heater for heating the crucible, and the evaporation rate from the film-forming source 25 is constant. It has a shutter or the like that prevents the film material from scattering on the substrate S. The film forming source 25 may have various configurations such as a point film forming source and a linear film forming source according to the application. The film formation source 25 is installed so as to be movable at least along the long side direction or the short side direction of the substrate S in parallel to the film formation surface of the substrate S. As a result, the film thickness can be made uniform over the entire substrate S. Further, when the vapor deposition film forming apparatus 110 has two film forming stages in the vacuum container 21, the film forming source 25 can move from one stage to another along the short side direction of the substrate S. Is installed. The film forming source 25 may be installed so as to be movable at least along the short side direction of the substrate S in parallel with the film forming surface of the substrate S.

Although not shown in FIG. 2, the vapor deposition film forming apparatus 110 has a film thickness monitor and a film thickness calculation unit for measuring the thickness of the film deposited on the substrate S.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum container 21. The actuator and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a drive unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a drive unit for moving the mask support unit 23 up and down (moving in the Z direction). The electrostatic chuck Z actuator 28 is a drive unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

The position adjusting mechanism 29 is a mechanism for adjusting the relative position of the substrate S and the mask M. The position adjusting mechanism 29 causes the entire electrostatic chuck 24 to move with respect to the substrate support unit 22 and the mask support unit 23 in the X direction, the Y direction, and θ. In the present embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is being sucked.

In order to photograph the alignment mark formed on the substrate S and the mask M on the outer upper surface of the vacuum container 21 through a transparent window provided on the upper surface of the vacuum container 21 in addition to the above-described actuator and position adjusting mechanism. The alignment camera 20 may be installed. In the present embodiment, the alignment camera 20 may be installed at a position corresponding to a diagonal line of the rectangular substrate S, the mask M and the electrostatic chuck 24, or at a position corresponding to four rectangular corners.

The alignment camera 20 installed in the vapor deposition apparatus 110 of the present embodiment is a fine alignment camera used for adjusting the relative position between the substrate S and the mask M with high accuracy, and the viewing angle thereof. Is a narrow but high resolution camera. The vapor deposition film forming apparatus 110 according to the present embodiment may include a rough alignment camera having a relatively wide viewing angle and low resolution in addition to the fine alignment camera 20. The rough alignment camera may be installed at a position corresponding to the center of two opposing sides of the rectangular substrate S, the mask M, and the electrostatic chuck 24.

The position adjustment mechanism 29 uses the position information of the substrate S (first object to be adsorbed) and the mask M (second object to be adsorbed) acquired by the alignment camera 20, based on the position information of the substrate S (first object to be adsorbed). And the mask M (second object to be attracted) are relatively moved to perform position adjustment.

The vapor deposition film forming apparatus 110 includes a control unit 40. The control unit 40 has functions of carrying and aligning the substrate S, controlling the film forming source 25, controlling film forming, and the like. The control unit 40 may also have a function of controlling application of a voltage to the electrostatic chuck 24, that is, a function of a voltage control unit 43 of FIG.

The control unit 40 can be configured by, for example, a computer having a processor, a memory, a storage, an I/O and the like. In this case, the function of the control unit 40 is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or PLC (Programmable Logic Controller) may be used. Alternatively, some or all of the functions of the control unit 40 may be configured by a circuit such as an ASIC or FPGA. In addition, a control unit may be installed for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

FIG. 3 shows a sputtering film forming apparatus 111 as another example of the film forming apparatus 11. 3A is a schematic view seen from the X-axis direction, FIG. 3B is a schematic view seen from the Y-axis direction, and FIG. 3C is a schematic view seen from the Z-axis direction. The sputter film forming apparatus 111 of FIG. 3 heats the film forming source with a heater in that the ionized gas particles collide with the target of the film forming material to atomize the film forming material of the target. This is different from the vapor deposition film forming apparatus 110 of FIG. 2 in which the film forming material in the film source is evaporated to form particles. 3, constituent elements having similar functions to those of the vapor deposition film forming apparatus 110 of FIG. 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

The sputtering film forming apparatus 111 shown in FIG. 3 may be, for example, a magnetron sputtering apparatus. The magnetron sputtering apparatus includes a magnet for forming a magnetic field on the surface of the target, and is configured to form a loop-shaped magnetic flux near the surface of the target. According to such a configuration, the electrons trapped in the magnetic flux can promote the ionization of argon gas or the like, and the plasma can be concentrated in the vicinity of the target to increase the sputtering efficiency of the target.

The sputtering film forming apparatus 111 includes a vacuum container 21 to which an inert gas such as argon is supplied, and rotary target units 31A and 31B as film forming sources which are arranged to face the substrate S carried into the vacuum container 21. Equipped with.

Each of the rotary target units 31A and 31B forms a magnetic field on the surface of the rotary target 310 having a cylindrical shape, the cylindrical cathode 311 supplied with power from the power source 32, and the surface of the rotary target 310 facing the substrate S. And a magnet unit 312. The cathode 311 may be integrally formed with the rotary target 310 as a backing tube of the rotary target 310, or the rotary target 310 itself may also have the function of the cathode 311.

The pair of rotary target units 31A and 31B rotate while moving relative to the substrate S. In the present embodiment, the pair of rotary target units 31A and 31B rotate while moving in the horizontal direction (the direction along the film formation surface of the substrate S) while the substrate S is stationary, so that the target on the substrate S is rotated. Film the particles. The pair of rotary target units 31A and 31B are arranged in parallel at a predetermined interval in the relative movement direction with respect to the substrate S, and are installed so as to move integrally as a unit.

By making the targets of the pair of rotary target units 31A and 31B different from each other, the sputter film forming apparatus 111 of the present embodiment relatively moves the pair of rotary target units 31A and 31B and the substrate S twice. Thus, a two-layer laminated film can be formed.

For example, when forming the first layer (first scan), one target unit 31A forms a film, and the other target unit 31B functions as an anode.

During the film formation of the second layer (second scan), the output voltage from the power supply 32 is controlled so that the film is formed by the other target unit 31B and the one target unit 31A functions as an anode.

Thus, during film formation, while the film is being formed by one target unit, the other target unit functions as an anode, so that a stable electric field is maintained regardless of the scanning position of the substrate S, and the entire substrate S is maintained. A uniform film thickness can be formed over the entire length. However, the sputter film forming apparatus 111 according to the embodiment of the present invention is not limited to the configuration shown in FIG. 3, and the number of target units is not two but another number (for example, one or three or more). May have a configuration.

A pair of guide rails 33 that guide the rotating target units 31A and 31B are horizontally arranged on the lower surface side inside the vacuum container 21. The rotary target units 31A and 31B are movably supported by the guide rail 33 via end blocks 34 that support both ends thereof.

The rotation target units 31A and 31B have a rotation axis parallel to the X axis, and the rotation axes of the respective rotation targets are arranged parallel to each other in the Y axis direction at a predetermined interval.

Although not particularly shown, the drive mechanism of the end block 34 may be a linear motor, or a mechanism using a ball screw or the like for converting the rotary motion of the rotary motor into a linear motion.

The substrate S and the mask M are attracted to the electrostatic chuck 24 outside the vacuum container 21 (carrier or transport device), and are attracted to the electrostatic chuck 24 and are attracted to the electrostatic chuck 24 into the vacuum container 21 by a transport rail (not shown). It is carried in and moved to the film forming position. Thereby, even if the substrate S and the mask M are large, the substrate S and the mask M can be more stably transported into the sputter deposition apparatus 111. In such an embodiment, the film forming apparatus includes a carrier or a conveying device having the electrostatic chuck 24 and the sputter film forming apparatus 111.

However, the present invention is not limited to this, and the substrate S and the mask M may be carried into the vacuum container 21, and may be held by being attracted by the electrostatic chuck 24 in the vacuum container 21. For example, the substrate S loaded into the vacuum container 21 is supported horizontally (parallel to the XY plane) by the substrate support unit 22, and the mask M loaded into the vacuum container 21 is mask-supported below the substrate S. It may be supported by the unit 23. Thus, the substrate S supported by the substrate support unit 22 and the mask M supported by the mask support unit 23 are attracted and fixed by the electrostatic chuck 24 installed in the vacuum container 21.

The electrostatic chuck 24 according to the embodiment shown in FIG. 3 is also the unit area of the first region of the electrostatic chuck 24 that attracts a region corresponding to the device formation region (deposition target region) of the substrate S or the effective region of the mask M. The electrostatic attractive force per contact is configured or controlled to be different from the electrostatic attractive force per unit area of the second region of the electrostatic chuck 24 that attracts the region corresponding to the scribe region of the substrate S or the peripheral region of the mask M. ..

For example, the first region of the electrostatic chuck 24 is configured or controlled so as to apply a relatively weaker attracting force per unit area to the substrate S or the mask M than the second region. As a result, the turbulence of the plasma in the vicinity of the device formation region (deposition target region) of the substrate S due to the electric field of the electrostatic chuck 24 is reduced, whereby the film formed in the device formation region (deposition target region) is reduced. The substrate S can be more stably adsorbed as compared with the conventional technique while reducing the influence on the film quality and the uniformity of the film thickness distribution.

In FIG. 3, the substrate S is stationary and the rotary target units 31A and 31B are relatively horizontally moved, but the present invention is not limited to this. For example, the substrate S is horizontally moved and the rotary target units are rotated. 31A and 31B may be configured to rotate only without being horizontally moved, and the substrate S and the rotation target units 31A and 31B are both configured to be relatively horizontally moved to perform film formation. May be. Further, although the sputter deposition apparatus 111 having the rotary target unit has been described with reference to FIG. 3, the present invention is not limited to this, and is also applied to a sputter deposition apparatus having a planar cathode unit having a flat target. It is possible.

2 and 3, the vapor deposition film forming apparatus 110 and the sputter film forming apparatus 111 are described as examples, but the present invention is not limited to this, and the mask M is attached to the substrate S adsorbed by the electrostatic chuck 24. As long as the film formation is performed via the above, the present invention can be applied to a film forming apparatus using another film forming method.

<Electrostatic chuck system and suction method>
The electrostatic chuck system 41 and the suction method according to the present embodiment will be described with reference to FIGS. 4 to 6.

FIG. 4A is a conceptual block diagram of the electrostatic chuck system 41 of the present embodiment, and FIG. 4B is a schematic plan view of the electrostatic chuck 24. 5A and 5B are schematic cross-sectional views for explaining the configuration of the electrostatic chuck 24 according to the embodiment of the present invention.

As shown in FIG. 4A, the electrostatic chuck system 41 of the present embodiment includes an electrostatic chuck 24, a voltage applying section 42, and a voltage control section 43.

The voltage application section 42 applies a voltage for generating an electrostatic attractive force to the electrode section of the electrostatic chuck 24.

The voltage control section 43 determines the magnitude of the voltage applied to the electrode section from the voltage application section 42, the voltage application start timing, according to the progress of the adsorption step of the electrostatic chuck system 41 or the film formation step of the film formation apparatus 11. The voltage maintenance time, the voltage application sequence, etc. are controlled.

For example, the voltage control unit 43 can independently control the voltage application to the plurality of sub electrode units 241, 241 ′, 241 ″, 242 and the like provided in the electrode unit of the electrostatic chuck 24 for each sub electrode unit. In the present embodiment, the voltage control unit 43 is configured separately from the control unit 40 of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit 40 of the film forming apparatus 11. ..

The electrostatic chuck 24 has an electrostatic chuck plate portion 240 having a structure in which an electric circuit such as a metal electrode is embedded in a matrix of a dielectric material or an insulating material (for example, a ceramic material).

The electrostatic chuck plate part 240 has an electrode part 240a embedded in an insulator matrix 240c and a dielectric part 240b. The electrode section 240a generates an attraction force for attracting an object to be attracted (for example, the substrate S or the mask M) to the attraction surface by applying a voltage by the voltage applying section 42. The dielectric part 240b is formed of one or more dielectric materials and is interposed at least between the electrode part 240a and the adsorption surface. The electrostatic chuck plate part 240 has a shape corresponding to the shape of the substrate S, for example, a rectangular shape.

As shown in FIGS. 4(a) and 4(b), 5(a) and 5(b), the electrostatic chuck 24 has an attraction surface on which an object to be attracted (the substrate S or the mask M) is attracted. The matrix is separated at a predetermined interval in a first direction (X direction) parallel to the (XY plane) and a second direction (Y direction) parallel to the suction surface and intersecting the first direction (X direction). The plurality of first regions 101 arranged in a shape and the second region 102 between the plurality of first regions 101 are provided. In the present embodiment, the plurality of first regions 101 correspond to the plurality of sub electrode parts 241, 241′, 241″, 242, etc. of the electrode part 240a. The second region 102 is the second sub electrode part 241′, 241", 242', 242", etc. The electrode portion 240a of the present embodiment has a longitudinal direction (Y direction) of the electrostatic chuck plate portion 240 and/or a lateral direction (X direction) of the electrostatic chuck plate portion 240a. Direction), a plurality of first sub-electrode portions 241 to 249, which are divided into a plurality of sub-electrode portions and respectively correspond to a plurality of device formation regions (deposition target regions) of the substrate S, and a scribe region of the substrate S. A plurality of second sub electrode portions 241', 241", 242', 242" and the like.

As shown in FIG. 4B, the plurality of second sub electrode portions 241 ′, 241 ″, 242 ′, 242 ″, etc. are arranged between the plurality of first sub electrode portions 241 to 249 in the X direction and the Y direction. And is provided on the peripheral portion of the electrostatic chuck 24.

In the present embodiment, in the electrostatic chuck 24, the adsorption force per unit area of the first region in which the plurality of first sub-electrode portions (241 to 249) is provided has a plurality of second sub-electrode portions (241′, 241″, 242″, 242″, etc.) is configured or controlled so as to be smaller than the adsorption force per unit area of the second region in which the electrode portions 240a are provided, as shown in FIG. Have different electrode densities depending on whether they are regions corresponding to the device formation region or the scribe region of the substrate S. In this case, the first region corresponding to the device formation region is formed. Even if the voltage applied to the provided first sub-electrode portion and the voltage applied to the second sub-electrode portion provided in the second region corresponding to the scribe region are controlled to be the same, the substrate S in the first region is applied. The electrode density can be configured such that the electrostatic attraction is smaller than the electrostatic attraction to the substrate S in the second region, while the electrode portion 240a is a region corresponding to the device formation region of the substrate S or a scribe. The electrode density may be the same regardless of whether it is a region corresponding to the region, in which case the voltage applied to the first sub-electrode portion provided in the first region corresponding to the device formation region and the scribe By performing voltage control so that the voltage applied to the second sub-electrode portion provided in the second region corresponding to the region is different, the electrostatic attractive force on the substrate S in the first region acts on the substrate S in the second region. It can be controlled to be smaller than the electrostatic attraction.

Each of the first sub-electrode part and the second sub-electrode part has an electrode pair 44a, 44b to which positive (first polarity) and negative (second polarity) voltages are applied to generate electrostatic attraction force. .. For example, each sub-electrode unit has a first electrode 44a to which a positive voltage is applied and a second electrode 44b to which a negative voltage is applied.

The first electrode 44a and the second electrode 44b each have a comb shape, as shown in FIG. For example, each of the first electrode 44a and the second electrode 44b has a plurality of comb tooth portions and a base portion connected to the plurality of comb tooth portions. The base of each of the electrodes 44a and 44b supplies a voltage to the comb-tooth portion, and the plurality of comb-tooth portions generate an electrostatic attraction force between the electrodes and the object to be attracted. In one sub electrode portion, the comb tooth portions of the first electrode 44a are alternately arranged so as to face and mesh with the comb tooth portions of the second electrode 44b. In this way, the comb teeth of the electrodes 44a and 44b are opposed to each other and are intricate with each other, so that the interval between the electrodes can be narrowed, thereby forming a large non-uniform electric field and increasing the gradient force. Thus, the substrate S can be stably adsorbed.

In the present embodiment, the electrodes 44a and 44b of the sub-electrode portions 241, 241', 241", 242, etc. of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited to this and is not limited thereto. It can have various shapes as long as it can generate electrostatic attraction between itself and the body.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption parts corresponding to a plurality of sub-electrode parts. For example, in the electrostatic chuck 24 of the present embodiment, as shown in FIG. 4B, a plurality of adsorption parts 141, 141′, 141 corresponding to a plurality of sub-electrode parts 241, 241′, 241″, 242, etc. , 142, etc.

The attraction unit is provided so as to be divided in the longitudinal direction (Y-axis direction) and the lateral direction (X-axis direction) of the electrostatic chuck 24, but is not limited to this, and is not limited thereto. It may be provided so as to be divided only in the hand direction. The plurality of adsorption units may be configured such that one plate physically has a plurality of sub-electrode units, and each of the plurality of physically divided plates has one or more sub-electrode units. It may be configured by

In the embodiment shown in FIG. 4B, each of the plurality of suction portions corresponds to each of the plurality of sub electrode portions, but one suction portion may correspond to each of the plurality of sub electrode portions. Good.

For example, by controlling the voltage application to the plurality of first sub-electrode units 241 to 249 by the voltage control unit 43, the substrates S are arranged in a direction (Y direction) that intersects with the suction advancing direction (X direction). The three first sub-electrode parts 241, 242, 243 may form one first adsorption part. That is, the voltage of each of the three first sub electrode portions 241, 242, 243 can be independently controlled, but the same voltage is applied to the three first sub electrode portions 241, 242, 243 at the same time. By controlling, these three first sub electrode portions 241, 242, 243 can function as one adsorption portion. The specific physical structure and electrical circuit structure are not limited as long as the suction of the substrate can be independently controlled in each of the plurality of suction units. The plurality of second sub electrode portions (241′, 241″, 242′, 242″, etc.) can also be configured such that the plurality of second sub electrode portions form one adsorption portion.

According to the embodiment of the present invention shown in FIGS. 5A and 5B, the electrostatic chuck 24 has a first area corresponding to the device forming area (film formation target area) of the substrate S or the effective area of the mask M. A unit of electrostatic attraction per unit area of the substrate S or the mask M or the like in the one area 101 to the object to be attracted in the second area 102 corresponding to the scribe area of the substrate S or the peripheral area of the mask M. It is configured or controlled to be smaller than the electrostatic attraction force per area. That is, the electrostatic chuck 24 is configured or controlled so that the electric field generated from the first sub electrode portion of the first region 101 is smaller than the electric field generated from the second sub electrode portion of the second region 102.

As a result, the influence of the electric field on the region of the adsorption surface of the substrate S corresponding to the region adsorbed to the first region 101 of the electrostatic chuck 24, that is, the device formation region (deposition target region) of the substrate S is reduced. Therefore, it is possible to suppress deterioration of the film quality and the uniformity of the film thickness distribution of the film formed in the device formation region (deposition target region) of the substrate S. Further, in the sputtering film forming apparatus 111, since the turbulence of plasma on the device formation region (film formation target region) of the substrate S can be reduced, a film is formed in the device formation region (film formation target region) of the substrate S. The deterioration of the film quality and the uniformity of the film thickness distribution of the film can be suppressed more significantly. Further, not only the region corresponding to the scribe region of the substrate S but also the region corresponding to the device forming region of the substrate S can be attracted, and the large substrate S can be stably held. ..

One method of configuring the electrostatic chuck 24 so that the electrostatic attractive force per unit area in the first region 101 is smaller than the electrostatic attractive force per unit area in the second region 102 is an electrostatic chuck plate portion. The voltage applied to the electrode part 240a constituting the 240 is controlled so as to be different for each region (each adsorption part or each sub-electrode part).

For example, when the electrostatic chuck plate part 240 has a plurality of sub-electrode parts and is divided into a plurality of regions (adsorption parts), it is adsorbed to a region corresponding to the device formation region (film formation target region) of the substrate S. It is possible to control the first sub-electrode part to which a force is applied so that a voltage lower than that of the second sub-electrode part to which a suction force is applied is applied to a region corresponding to the scribe region of the substrate S.

That is, according to the embodiment of the present invention, the voltage control unit 43 causes the first area 101 of the electrostatic chuck 24 to attract the area corresponding to the device formation area (film formation target area) on the attraction surface of the substrate S. The voltage applied to the first sub-electrode parts 241-249 or the corresponding first adsorption parts 141-149 corresponds to the second area 102 of the second area 102 for adsorbing the area corresponding to the scribe area on the adsorption surface of the substrate S. The sub-electrode parts 241', 241", 242', 242", etc., or the second attracting parts 141', 141", 142', 142", etc. corresponding thereto may be smaller in magnitude than the voltage applied to them. To control.

As described above, the voltage applied to the first sub-electrode portion of the first region 101 of the electrostatic chuck 24 that attracts the region corresponding to the device forming region (deposition target region) on the attracting surface of the substrate S is set to the substrate. By making the voltage smaller than the voltage applied to the second sub-electrode portion of the second region 102 of the electrostatic chuck 24 that attracts the region corresponding to the scribe region of the attraction surface of S, the device formation region (deposition of film) of the substrate S is formed. While the influence of the electric field of the electrostatic chuck 24 on the target area) is relatively reduced, it is possible to suppress the decrease in the attraction force on the substrate S. In addition, the voltage control unit 43 controls the voltage so that the voltage applied to the first sub-electrode section of the first region 101 is different from the voltage applied to the second sub-electrode section of the second region 102. Therefore, the structure of the electrostatic chuck 24 can be simplified.

FIG. 6A shows a time change of the voltage applied to the first sub electrode portions 241 to 249 of the electrostatic chuck 24, and FIG. 6B shows the second sub electrode portions 241 ′ and 241 of the electrostatic chuck 24. "242", 242", etc. show the time change of the applied voltage. The horizontal axis represents time and the vertical axis represents voltage. For example, as shown in FIG. 6A, the voltage controller 43 starts the film formation process (t=T5) or finishes after the adsorption of the substrate S by the electrostatic chuck 24 and the adsorption of the mask M are completed. The voltage applied to the plurality of first sub-electrode portions is controlled to be reduced from the fourth voltage V4 to a fifth voltage V5 which is lower than the fourth voltage V4 during at least a part of the film process. On the other hand, as shown in FIG. 6B, the voltage control unit 43 controls the voltage applied to the second sub-electrode unit to be maintained at the fourth voltage V4 during the film forming process. It should be noted that, here, the magnitude relationship of the voltage when “the voltage V5 is smaller than the voltage V4” means that the electrostatic adsorption force per unit area by the first sub-electrode portion to which the voltage V5 is applied is the voltage applied to the voltage V4. It means a magnitude relation of the voltage that is smaller than the electrostatic attraction force per unit area by the two sub-electrode portions, and may differ from a mathematical magnitude relation depending on conditions such as polarity of the voltage.

Another method for configuring the electrostatic chuck 24 so that the electrostatic attractive force per unit area in the first region 101 is smaller than the electrostatic attractive force per unit area in the second region 102 is an electrostatic chuck plate portion 240. The electrode part 240a and/or the dielectric part 240b are made of substances having different electric characteristics for each region, or different electric properties of the same substance. For example, the density of the electrodes forming the electrode part 240a may be different for each region, or the type and thickness of the dielectric material forming the dielectric part 240b may be different for each region. Hereinafter, a specific description will be given with reference to FIGS. 5(a) and 5(b). FIG. 5A is a diagram conceptually showing a configuration in which the electrostatic attraction force is made different in each region by making the thickness, the specific resistance, and the dielectric constant of the dielectric portion different in each of the 24 regions of the electrostatic chuck. is there. FIG. 5B is a diagram conceptually showing a configuration in which the electrostatic attraction force is made different for each region by making the electrode density different for each region of the electrostatic chuck 24.

In FIG. 5A, the dielectric part 240b of the electrostatic chuck plate part 240 may be made of a different dielectric material for each region, and the same dielectric material may have different thicknesses. You can More specifically, in the former case, the dielectric material forming the first region 101 of the electrostatic chuck 24 may have a higher specific resistance than the dielectric material forming the second region 102, and Alternatively, the dielectric constant may be reduced. In the latter case, the thickness of the dielectric part 240b in the first region 101 of the electrostatic chuck 24 can be made larger than the thickness of the dielectric part 240b in the second region 102. Here, the “thickness of the dielectric part 240b” refers to the distance between the lower surface of the electrode part and the attraction surface of the electrostatic chuck 24 in the regions 101 and 102. In FIG. 5A, the thickness of the dielectric portion 240b in the first region 101 of the electrostatic chuck 24 is the distance H1 between the lower surface of the first sub electrode portion 241 and the attraction surface 240c of the electrostatic chuck 24. The thickness of the dielectric portion 240b in the second region 102 of the electrostatic chuck 24 is the distance H2 between the lower surface of the second sub electrode portion 241' and the attraction surface 240c of the electrostatic chuck 24. Further, in FIG. 5A, the specific resistance of the dielectric part 240b1 in the first region 101 of the electrostatic chuck 24 is larger than the specific resistance of the dielectric part 240b2 in the second region 102 of the electrostatic chuck 24. Further, in FIG. 5A, the dielectric constant of the dielectric portion 240b1 in the first region 101 of the electrostatic chuck 24 is smaller than the dielectric constant of the dielectric portion 240b2 in the second region 102 of the electrostatic chuck 24. In FIG. 5A, for convenience of explanation, all the conditions of the thickness of the dielectric portion, the specific resistance of the dielectric substance, and the dielectric constant of the dielectric substance are set to the first region 101 and the second region 102. However, the electrostatic attraction force may be different for each area by changing at least one condition for each area, and the combination of different conditions is not limited.

According to such an embodiment, even if the same voltage is applied to the electrodes of the electrode part 240a regardless of the region, the first sub-electrode part of the first region 101 is the second sub-electrode part of the second region 102. The electrostatic attractive force per unit area becomes smaller. That is, by adjusting the thickness, the dielectric constant, and/or the specific resistance of the dielectric part 240b, the influence of the electric field from the electrode part of the electrostatic chuck 24 on the device formation region of the substrate S can be adjusted. .. In addition, in FIG. 5A, an example in which the configuration of the electrode portion 240a (for example, the electrode density and the like) is not different for each region is shown, but the present invention is not limited to this. For example, not only the thickness, the dielectric constant, or the specific resistance of the dielectric part 240a but also the electrode density may be different for each region.

That is, as conceptually shown in FIG. 5B, the electrodes forming the electrode portion 240a of the electrostatic chuck plate portion 240 can be provided so that the electrode density is different depending on the region. More specifically, the electrode density of the first sub electrode portion 241 in the first region 101 of the electrostatic chuck 24 is set to be lower than the electrode density of the second sub electrode portion 241 ′ in the second region 102. Is provided. For example, as shown in FIG. 4B, when each sub-electrode part of the electrode part 240 a of the electrostatic chuck plate part 240 is composed of a pair of electrodes having a comb shape, it is provided in the first region 101. By making the distance between the comb-teeth portions of the first sub-electrode portion wider than the distance between the comb-teeth portions of the second sub-electrode portion provided in the second region 102, the first region 101 becomes the second region. The electrode density can be smaller than that of 102. That is, in FIG. 4B, a partially enlarged view A is an enlarged view of a portion of the adjacent first sub-electrode portion and second sub-electrode portion 244, 244″, 247, and the first sub-electrode portion 244, The distance d1 between the comb teeth of 247 is wider than the distance d2 between the comb teeth of the second sub electrode portion 244″. In addition, the partially enlarged view B is an enlarged view of a portion of the adjacent first sub-electrode portion and second sub-electrode portion 244, 244 ′, 245, between the comb tooth portions of the first sub-electrode portion 244, 245. The distance d1 is wider than the distance d2 between the comb teeth of the second sub electrode portion 244'.

According to such an embodiment of the present invention, even if the same voltage is applied to the electrodes of the electrode part 240a regardless of the region, the first sub-electrode part of the first region 101 having a relatively low electrode density is The electrostatic attractive force per unit area is smaller than that of the second sub-electrode portion of the second region 102, in other words, a small electric field is generated. Therefore, while simplifying the voltage control by the voltage control unit 43, it is possible to suppress the deterioration of the film quality and the uniformity of the film thickness distribution of the film formed in the film formation target region of the substrate S. Although FIG. 5B shows an example in which the structure of the dielectric part 240b (for example, the specific resistance and the dielectric constant of the dielectric) is not different for each region, the present invention is not limited to this. For example, not only the electrode density but also the specific resistance and the dielectric constant of the dielectric may be different for each region.

4B and 5B show an example in which the same electrode density is provided over the entire first region of the electrostatic chuck 24 corresponding to the size of one display panel of the organic EL display device. However, the present invention is not limited to this, and it is possible to reduce the deterioration of the film quality of the film formed in the film formation target region of the substrate S and the uniformity of the film thickness distribution, and the disturbance of the plasma on the film formation target region. As long as it is, the electrode density may be different depending on the position in the first region 101. That is, in the example shown in FIG. 4B, FIG. 5A, and FIG. 5B, the electrostatic chuck 24 is provided with a plurality of first device formation regions (film formation target regions) corresponding to the plurality of device formation regions of the substrate S. There is one region 101, a plurality of suction parts 141, 142, etc. corresponding to the plurality of first regions 101 are composed of a plurality of first sub-electrode parts 241, 242, etc., and a plurality of first sub-electrode parts 241, Between the first sub-electrode portions 241, 242 and the like having different electrode densities of 242 and the like (in the example of FIG. 4B, the distance d1 between the comb tooth portions of the pair of comb-shaped electrodes 44a and 44b). Although the same, the electrode density of the first sub-electrode part 241 and the electrode density of the first sub-electrode part 242 may be different. In addition, the electrode density of the first sub-electrode portion is uniform inside each first region. For example, in the example of FIG. 4B, the pair of comb-shaped electrodes 44a is irrespective of the position in the first region 101 corresponding to the suction portion 141.
, 44b has a distance d1b between the comb tooth portions, for example, a distance between the comb tooth portions at a certain position in the first region 101 is d1a, and a distance between the comb tooth portions at another position is d1b. For example, the electrode density of the first sub electrode portion 241 may be changed depending on the position in the first region 101. Similarly, the electrode density of the second sub-electrode portions 241', 242', etc. forming the adsorption portions 141', 142', etc. corresponding to the second area 102 may be changed according to the position in the second area 102. Good. Further, the characteristics (thickness, permittivity, specific resistance, etc.) of the dielectric portion are not limited to the electrode density, and may be varied depending on the position in the first region 101 or the second region 102.

For example, in order to form a plurality of pixels in the film formation target region of the substrate S corresponding to the first region 101 of the electrostatic chuck 24 or to form RGB sub-pixels in any of the pixels, an open mask is used. Or a fine metal mask is used, depending on the position in the film formation target region of the substrate S, a portion where film formation is not performed due to the opening portion of the open mask or the fine metal mask and an opening portion of the fine metal mask. There may be both a portion where the film is formed correspondingly. The electrode density and the characteristics/thickness of the dielectric may be different between these portions. As a result, the influence of the electric field of the electrostatic chuck 24 can be adjusted by making the region on the substrate S where film formation is performed and the region where film formation is not performed more finely.

According to the present invention, the voltage applied to the first sub-electrode part installed in the first area 101 of the electrostatic chuck 24 is different from the voltage applied to the second sub-electrode part installed in the second area 102. And the characteristics (thickness, dielectric constant, specific resistance, etc.) of the electrode part 240a and the dielectric part 240b of the electrostatic chuck 24 are different between the first region 101 and the second region 102. The embodiments may be combined.

<Film forming process>
The film forming method adopting the adsorption method according to the present embodiment will be described below.

The mask M is carried into the vacuum container 21 by the transfer robot 14 in the transfer chamber 13, and the substrate S is carried into the vacuum container 21 of the film forming apparatus 11 while being supported by the mask support unit 23, and the substrate is supported. It is supported by the support portion of the unit 22.

Then, after the electrostatic chuck 24 descends toward the substrate S and is sufficiently close to or in contact with the substrate S, the first voltage V1 is applied to the first sub electrode portion and the second sub electrode portion of the electrostatic chuck 24. Then, the substrate S is adsorbed (t=T1).

When the adsorption of the substrate S to the electrostatic chuck 24 is completed (t=T2), the voltage applied to the first sub electrode portion and the second sub electrode portion of the electrostatic chuck 24 is reduced to the second voltage V2. ..

Next, in a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative positional deviation of the substrate S with respect to the mask M. When the substrate S descends to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M to measure the relative displacement between the substrate S and the mask M.

When it is determined as a result of the measurement that the relative displacement of the substrate S with respect to the mask M exceeds the threshold value, the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to be in a state of being attracted to the electrostatic chuck 24. The substrate S is moved in the horizontal direction (XYθ direction), and the position of the substrate S with respect to the mask M is adjusted (aligned).

After the alignment step (t=T3), the third voltage V3 is applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24 to attract the mask M to the electrostatic chuck 24 over the substrate S. .. When the adsorption of the mask M is completed (t=T4), the voltage applied to the first sub electrode portion and the second sub electrode portion of the electrostatic chuck 24 is reduced to the fourth voltage V4 which is the adsorption holding voltage.

According to the adsorption method and the film forming method according to the embodiment of the present invention, the substrate S and the mask M are carried into the vacuum container 21 of the film forming apparatus 11 and the electrostatic chuck 24 installed in the vacuum container 21 is used. The present invention is not limited to this, but the present invention is not limited to this. For example, a state in which the substrate S and the mask M are adsorbed and fixed outside the vacuum container 21 by, for example, an electrostatic chuck installed on a carrier (not shown). Then, the entire carrier may be carried into the vacuum container 21.

According to one embodiment of the adsorption method and the film formation method of the present invention, the electrostatic chuck 24 is installed in the first region 101 at the start of the film formation step (t=T5) or at least during a part of the film formation step. The voltage applied to the applied first sub-electrode portion is reduced from the fourth voltage V4 to the fifth voltage V5 (<V4). As a result, the electric field generated by the first sub-electrode portion of the electrostatic chuck 24 affects the film quality and film thickness distribution of the film formed in the device formation region of the substrate S or the plasma distribution on the device formation region of the substrate S. However, by applying the fifth voltage V5 to the first sub-electrode part and not turning off the voltage application, the overall attraction force applied to the substrate S by the electrostatic chuck 24 is excessively reduced. As a result, it is possible to prevent the holding of the substrate S from becoming unstable.

According to another embodiment of the adsorption method and the film formation method of the present invention, various characteristics (thickness, dielectric constant, specific resistance, etc.) and/or electrode density of the dielectric portion of the first region 101 of the electrostatic chuck 24 are reduced. By configuring the second region 102 so that it is different from the second region 102, even if the same voltage is applied to the first sub-electrode part and the second sub-electrode part during the film forming process, It is possible to suppress the influence of the electric field on the film quality and film thickness distribution of the film formed in the device formation region (deposition target region) of the substrate S or the plasma distribution in the vicinity of the device formation region of the substrate S. That is, in such an embodiment, the control of the voltage applied to the first sub-electrode portion of the electrostatic chuck 24 does not follow the pattern of FIG. The pattern shown in FIG. 6B will be followed. Thereby, the film quality of the film formed by the electric field from the first sub-electrode portion in the device formation region (deposition target region) of the substrate S while performing simple voltage control that does not vary the voltage control for each region. It is possible to suppress the influence on the film thickness distribution or the plasma distribution in the vicinity of the device formation region of the substrate S.

Then, the film forming material of the film forming source 25 is formed on the substrate S through the mask M by heating evaporation or sputtering.

After forming a film with a desired thickness (t=T6), the voltage applied to the first sub-electrode portion of the electrostatic chuck 24 is reduced from the fifth voltage V5 to the sixth voltage V6 and applied to the second sub-electrode. The voltage is reduced from the fourth voltage V4 to the sixth voltage V6 to separate the mask M first.

Subsequently, a voltage of zero (0) or a polarity opposite to that at the time of adsorption is applied to the first sub-electrode portion and the second sub-electrode portion of the electrostatic chuck 24 to separate the substrate S from the electrostatic chuck 24. The above-described separation of the substrate S and the mask M may be performed inside the vacuum container 21 or outside the same, depending on the embodiment, as in the case of adsorption.

In the above description, the film forming apparatus 11 has a so-called upward film forming method (deposition up) in which the film formation is performed with the film forming surface of the substrate S facing vertically downward. However, the present invention is not limited to this, and the substrate S may be arranged vertically on the side surface of the vacuum container 21 and the film formation may be performed with the film formation surface of the substrate S parallel to the gravity direction. Good.

<Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be illustrated as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. 7A shows an overall view of the organic EL display device 60, and FIG. 7B shows a sectional structure of one pixel.

As shown in FIG. 7A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. It should be noted that the pixel here refers to a minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.

FIG. 7B is a schematic partial cross-sectional view taken along the line AB of FIG. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. There is. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue (sometimes described as organic EL elements). Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed commonly to the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anodes 64 to prevent the anodes 64 and the cathodes 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by water and oxygen, a protective layer 70 is provided to protect the organic EL element from water and oxygen.

In FIG. 7B, the hole transport layer 65 and the electron transport layer 67 are shown as a single layer, but depending on the structure of the organic EL display element, the hole transport layer 65 and the electron transport layer 67 are formed by a plurality of layers having a hole block layer and an electron block layer. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of the method for manufacturing the organic EL display device will be specifically described.

First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and the anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the anode 64 is formed, and an insulating layer 69 is formed. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is loaded into the first organic material film forming apparatus, the substrate is held by the electrostatic chuck, and the hole transport layer 65 is a common layer on the anode 64 in the display area. To form a film. The hole transport layer 65 is formed by vacuum vapor deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display region 61, a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the second organic material film forming apparatus and held by the electrostatic chuck. The substrate and the mask are aligned with each other, the mask is held over the substrate by an electrostatic chuck, and the light emitting layer 66R that emits red light is formed on a portion of the substrate 63 where the element that emits red light is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green is formed by the third organic material film forming apparatus, and the light emitting layer 66B emitting blue is formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved by a film forming apparatus for a metal material to form the cathode 68. At this time, the film forming device for the metal material may be a heating evaporation film forming device or a sputtering film forming device.

According to the present invention, the electrostatic attraction per unit area of the electrostatic chuck 24 with respect to the substrate S in the first region 101 is calculated as the electrostatic attraction per unit area with respect to the substrate S in the second region 102 located between the first regions 101. By making the force smaller than the attractive force, the influence of the electric field of the electrostatic chuck 24 on the film formation target region of the substrate S can be reduced.

After that, the organic EL display device 60 is completed by moving to a plasma CVD device to form a protective layer 70.

If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, if the substrate 63 is exposed to an atmosphere containing water and oxygen, the light emitting layer made of an organic EL material will be formed. It may be deteriorated by water or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea thereof.

11: film forming apparatus 21: vacuum container 22: substrate supporting unit 23: mask supporting unit 24: electrostatic chuck 41: electrostatic chuck system 42: voltage applying unit 43: voltage control unit 101: first area 102: second area 240: Electrostatic chuck plate part 240a: Electrode part 240b: Dielectric part

Claims (35)

An electrostatic chuck for adsorbing a film-forming target having a plurality of film-forming target regions,
The region for adsorbing the film formation target region of the film formation target is included in the first region, and the region for adsorbing the region between the plurality of film formation target regions of the film formation target is the first region. Included in 2 areas,
An electrostatic chuck, wherein the electrostatic attraction to the film formation target in the first region is different from the electrostatic attraction to the film formation target in the second region. The electrostatic chuck is configured such that an electrostatic attraction to the film formation target in the first region is smaller than an electrostatic attraction to the film formation target in the second region. Item 1. The electrostatic chuck according to Item 1. A first electrode portion provided in the first region and a second electrode portion provided in the second region,
The electrode density of the first electrode portion provided in the first region is lower than the electrode density of the second electrode portion provided in the second region. Chuck. Each of the first electrode portion and the second electrode portion has a pair of comb-teeth electrodes that are arranged so as to face each other so that the comb-teeth portions alternately mesh with each other,
The electrostatic chuck according to claim 3, wherein a distance between the comb tooth portions of the first electrode portion is wider than a distance between the comb tooth portions of the second electrode portion. An electrode part, and a dielectric part interposed between at least the electrode part and the adsorption surface of the film-forming target,
The electrostatic thickness according to any one of claims 2 to 4, wherein the thickness of the dielectric portion in the first region is larger than the thickness of the dielectric portion in the second region. Chuck. An electrode part, and a dielectric part interposed between at least the electrode part and the adsorption surface of the film-forming target,
The specific resistance of the dielectric portion in the first region is higher than the specific resistance of the dielectric portion in the second region. Electric chuck. An electrode part, and a dielectric part interposed between at least the electrode part and the adsorption surface of the film-forming target,
The dielectric constant of the said dielectric material part in the said 1st area|region is smaller than the dielectric constant of the said dielectric material part in the said 2nd area|region, The static of any one of Claims 2-6 characterized by the above-mentioned. Electric chuck. An electrostatic chuck for attracting an object to be attracted,
Arranged in a matrix at predetermined intervals in a first direction parallel to the adsorption surface on which the object to be adsorbed and a second direction parallel to the adsorption surface and intersecting the first direction. A plurality of first areas and a second area between the plurality of first areas,
An electrostatic chuck, wherein the electrostatic attraction to the object to be attracted in the first region is different from the electrostatic attraction force to the object to be attracted in the second region. 9. The electrostatic chuck is configured such that an electrostatic attraction to the object to be attracted in the first region is smaller than an electrostatic attraction force to the object to be attracted in the second region. The electrostatic chuck described in. An electrostatic chuck system for attracting a film-forming target having a plurality of film-forming target regions,
An electrostatic chuck having an electrode section,
A control unit that controls application of a voltage to the electrode unit,
In the electrostatic chuck, a region for adsorbing the film formation target region of the film formation target is included in the first region, and a region between the plurality of film formation target regions of the film formation target is adsorbed. The area for doing is included in the second area,
The control unit controls the voltage applied to the first electrode unit provided in the first region to be different from the voltage applied to the second electrode unit provided in the second region. Electrostatic chuck system. The control unit controls the first electrode unit and the second electrode unit so that the electrostatic attraction to the film formation target in the first region is smaller than the electrostatic attraction to the film formation target in the second region. The electrostatic chuck system according to claim 10, wherein a voltage applied to the electrode unit is controlled. The control unit controls the voltage applied to the first electrode unit to be different from the voltage applied to the second electrode unit during at least a part of the film forming process on the film formation target. The electrostatic chuck system according to claim 10, wherein: The control unit controls the voltage applied to the first electrode unit to be lower than the voltage applied to the second electrode unit during at least a part of the film forming process on the film formation target. The electrostatic chuck system according to claim 12, wherein: The controller controls the voltage applied to the first electrode part and the voltage applied to the second electrode part to be the same in the attraction step of attracting the film formation target to the electrostatic chuck. The voltage applied to the first electrode section is different from the voltage applied to the second electrode section during at least a part of the film formation step for controlling the film formation target to be performed after the adsorption step. The electrostatic chuck system according to claim 10, wherein the electrostatic chuck system is controlled as follows. The controller controls the voltage applied to the first electrode part and the voltage applied to the second electrode part to be the same in the attraction step of attracting the film formation target to the electrostatic chuck. The voltage applied to the first electrode unit is smaller than the voltage applied to the second electrode unit during at least a part of the film forming process for controlling the film forming object performed after the adsorption process. 15. The electrostatic chuck system according to claim 14, wherein the electrostatic chuck system is controlled as follows. An electrostatic chuck system for attracting an object to be attracted, comprising:
An electrostatic chuck having an electrode section,
A control unit that controls application of a voltage to the electrode unit,
The electrostatic chuck is separated at a predetermined interval in a first direction parallel to the attraction surface on which the attraction target is attracted and in a second direction parallel to the attraction surface and intersecting the first direction. And a plurality of first regions arranged in a matrix, and a second region between the plurality of first regions,
The control unit controls the voltage applied to the first electrode unit provided in the first region to be different from the voltage applied to the second electrode unit provided in the second region. Electrostatic chuck system. The control unit controls the first electrode unit and the second electrode unit so that the electrostatic attraction to the attracted body in the first region is smaller than the electrostatic attraction to the attracted body in the second region. The electrostatic chuck system of claim 16, wherein the voltage applied to the electrostatic chuck is controlled. A film forming apparatus for forming a film on a plurality of film formation target regions of a substrate through a mask,
An electrostatic chuck for attracting at least the substrate,
The said electrostatic chuck is the electrostatic chuck of any one of Claims 1-9, The film-forming apparatus characterized by the above-mentioned. Further having a vacuum container,
19. The film forming apparatus according to claim 18, wherein the electrostatic chuck is installed in the vacuum container. Further having a vacuum container,
The film forming apparatus according to claim 18, wherein the electrostatic chuck can be carried in and out of the vacuum container in a direction parallel to an adsorption surface. Further comprising a vacuum container and a film forming source arranged in the vacuum container,
The film forming apparatus according to claim 18, wherein the film forming source is movable relative to the substrate along a long side direction or a short side direction of the substrate. 22. The film forming apparatus according to claim 21, wherein the film forming source includes a storage unit that stores a film forming material and a heating unit that heats the film forming material. 22. The film forming apparatus according to claim 21, wherein the film forming source has a sputtering target. A film forming apparatus for forming a film on a plurality of film formation target regions of a substrate through a mask,
An electrostatic chuck system for attracting at least the substrate;
The film forming apparatus, wherein the electrostatic chuck system is the electrostatic chuck system according to any one of claims 10 to 17. Further comprising a vacuum container and a film forming source arranged in the vacuum container,
25. The film forming apparatus according to claim 24, wherein the film forming source is movable relative to the substrate along a long side direction or a short side direction of the substrate. 26. The film forming apparatus according to claim 25, wherein the film forming source includes a storage unit that stores a film forming material, and a heating unit that heats the film forming material. The film forming apparatus according to claim 25, wherein the film forming source has a target for sputtering. A method of adsorbing an adherend on an electrostatic chuck, comprising:
A first adsorption step of applying a first voltage to the electrode portion of the electrostatic chuck to adsorb a first object to be adhered as a film formation target having a plurality of film formation target regions to the electrostatic chuck;
A second attracting step of applying a second voltage to the electrode portion to attract the second object to be attracted to the electrostatic chuck via the first object to be attracted;
After the second adsorption step, the voltage applied to the first electrode part installed in the first area of the electrostatic chuck is different from the voltage applied to the second electrode part installed in the second area of the electrostatic chuck. And a step of controlling so that the voltage is applied.
A region for adsorbing the film formation target region of the first adsorbent is included in the first region, and a region for adsorbing a region between the plurality of film formation target regions of the first adsorbent. Is included in the second area. 29. The adsorption method according to claim 28, wherein in the controlling step, the voltage applied to the first electrode portion is controlled to be lower than the voltage applied to the second electrode portion. A film forming method for forming a film forming material through a mask on a substrate having a plurality of film formation target regions,
A first attracting step of attracting the substrate to an electrostatic chuck,
A second attracting step of attracting the mask to the electrostatic chuck via the substrate;
A step of releasing the film-forming material and depositing the film-forming material on the plurality of film-forming target regions of the substrate through the mask while the substrate and the mask are attracted to the electrostatic chuck. And have,
During at least a part of the film forming step, the voltage is applied to the first electrode portion provided in the first region of the electrostatic chuck and the second electrode portion provided in the second region of the electrostatic chuck. Control so that a voltage lower than
A region for adsorbing the film formation target region of the substrate is included in a first region, and a region for adsorbing a region between the plurality of film formation target regions of the substrate is included in a second region. And a film forming method. Further comprising a step of loading the substrate and the mask into a vacuum container while being attracted to the electrostatic chuck.
The film forming method according to claim 30, wherein the film forming step is performed by using a film forming source installed in the vacuum container. Further comprising a step of loading the mask into a vacuum container, and a step of loading the substrate into the vacuum container,
31. The film forming method according to claim 30, wherein the first adsorption process and the second adsorption process are performed by an electrostatic chuck installed in the vacuum container. 33. In the step of forming a film, the film forming source is heated by a heating unit to release the film forming material contained in the film forming source. The described film forming method. The film forming method according to any one of claims 30 to 32, wherein in the film forming step, the film forming material is released from a target of the film forming material by sputtering. An electronic device manufacturing method, comprising manufacturing the electronic device using the film forming method according to claim 30.

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