CN108701630A - The method of substrate carrier and processing substrate - Google Patents
The method of substrate carrier and processing substrate Download PDFInfo
- Publication number
- CN108701630A CN108701630A CN201780005584.3A CN201780005584A CN108701630A CN 108701630 A CN108701630 A CN 108701630A CN 201780005584 A CN201780005584 A CN 201780005584A CN 108701630 A CN108701630 A CN 108701630A
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- substrate
- mask
- carrier
- support surface
- substrate carrier
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of substrate carrier (100) for keeping substrate (10) during deposition of description.Substrate carrier includes:Electrostatic chuck (120), the electrostatic chuck (120) are configured to for attracting support surface (102) of the substrate towards substrate carrier (100);With magnetic chuck (130), the magnetic chuck (130) is configured to for attracting the support surface (102) of mask (20) and/or mask frame (25) towards substrate carrier, wherein electrostatic chuck (120) and magnetic chuck (130) to be incorporated into the carrier element (101) of substrate carrier.
Description
Technical field
The embodiment of present disclosure is related to a kind of substrate carrier for keeping substrate, and more particularly to a kind of tool
There is the substrate carrier of electrostatic chuck, the electrostatic chuck is for attracting substrate to support table during depositing materials on substrates
Face.The method that further embodiment is related to handling substrate especially exists more particularly to when substrate is kept by substrate carrier
In substantially vertical orientation, in the method for depositing materials on substrates.
Background technology
Become increasingly popular because of many reasons using the electrooptical device of organic material.For manufacturing such device
Many materials are relatively cheap, therefore organic photoelectric device has the potentiality of cost advantage compared with inorganic device.Organic material
Intrinsic property (such as flexibility of organic material) can have for the application of the deposition such as in flexible or non-flexible substrate
Profit.The example of organic photoelectric device include organic light emitting apparatus (Organic light emitting device, hereinafter referred to as
OLED), organic photoelectric transistor, organic photovoltaic battery and organic photodetectors.
For OLED, organic material can have the performance advantage more than conventional material.For example, what organic emission layer shone
Wavelength can be easily adjusted with suitable dopant.Luminous thin organic films when OLED is using cross-device application voltage.OLED
Becoming more and more interesting technology, for flat-panel monitor, illumination (illumination) and back lighting
(backlighting) applications such as.
Substrate and the mask for limiting pattern of the offer on substrate are maintained at respective support element usually using mechanical force
On.For keeping the conventional mechanical of substrate and mask to contact and may lead to substrate by the mechanical force applied during processing
Damage.Mechanical force can be applied to be during processing held in place mask.Conventional mechanical carrier can be in edge
It supports substrate, thus leads to the physical contact of the high concentration at substrate edges, and then ensure enough chucking powers.Concentrate on base
This Mechanical Contact of plate edge can generate contact stain or physical damnification, and substrate is made to degrade (degrade the
substrate)。
Newer processing system has been incorporated with the mechanism of the replacement for substrate adsorption (chuck) to be arrived to substrate carrier,
The mechanism of the replacement avoids disadvantages mentioned above.For example, substrate is held in position in by electrostatic chuck using electrostatic force.
The contact force between the component of system and substrate can be reduced.
However, usually requiring to keep in the other mechanism of mask before substrate during deposition, this may increase place
Reason (handling) complexity and the orientation problem that mask and/or substrate may be caused.For example, not damaged substrate and from base
The accurate three-dimensional localization that the close distance of plate is in the mask in front of substrate may be extremely challenging.
Therefore, it is necessary to for safety in the processing system and method and apparatus that mask and substrate is precisely located, together
When reduce processing complexity.
Invention content
In view of above, present disclosure provides a kind of substrate carrier, a kind of depositing device and a kind of side of processing substrate
Method.
According to the aspect of present disclosure, a kind of substrate carrier for keeping substrate during deposition is provided.Substrate carries
Body includes electrostatic chuck and magnetic chuck, and electrostatic chuck is configured to for attracting support surface of the substrate towards substrate carrier,
Magnetic chuck is configured to for attracting the support surface of mask and/or mask frame towards substrate carrier, wherein electrostatic chuck
(integrate) is integrated in the carrier element of substrate carrier with magnetic chuck.
According to another aspect of the present disclosure, a kind of depositing device for being deposited on material on substrate is provided.It is heavy
Product equipment includes substrate carrier and sedimentary origin, and sedimentary origin is configured to for depositing material on the substrate kept by substrate carrier
Material.Substrate carrier includes electrostatic chuck and magnetic chuck, and electrostatic chuck is configured to for attracting substrate towards substrate carrier
Support surface, magnetic chuck are configured to for attracting the support surface of mask and/or mask frame towards substrate carrier, wherein
Electrostatic chuck and magnetic chuck are incorporated into the carrier element of substrate carrier.
According to another aspect of the present disclosure, a kind of method of processing substrate is provided.The method includes utilizing integration
Substrate is attracted the support surface towards substrate carrier, the cloth in front of substrate by the electrostatic chuck in the carrier element of substrate carrier
Mask is set, and utilizes the magnetic chuck being incorporated into the carrier element of substrate carrier by mask and/or keeps the mask frame of mask
Frame attracts towards support surface.
Other aspects, the advantages and features of present disclosure can be clear from the description and the appended drawings.
Description of the drawings
In order to be understood in detail present disclosure features described above mode, can by reference to embodiment and with letter
The more specific description for the present disclosure being summarized in.Attached drawing is related to the embodiment of present disclosure, and below
In be described.Describe typical embodiment in the accompanying drawings, and in typical embodiment described further below.
Fig. 1 is the schematic diagram according to the substrate carrier of some embodiments as described herein;
Fig. 2 is the schematic diagram according to the substrate carrier of some embodiments as described herein;
Fig. 3 is the schematic diagram according to the substrate carrier of some embodiments as described herein;
Fig. 4 is the schematic diagram according to the depositing device of some embodiments as described herein;
Fig. 5 is the flow chart for the method for illustrating the processing substrate according to embodiment as described herein.
Specific implementation mode
With detailed reference to each embodiment, one or more examples of illustrated embodiment in the accompanying drawings.Each show
Example is all to be provided in a manner of explanation, and be not intended to limit.For example, the part as an embodiment illustrates or description
Feature can use in any other embodiment or be used in combination with any other embodiment, to generate another reality
Apply mode.Present disclosure is intended to include such modifications and variations.
Below in the description of attached drawing, identical reference number indicates same or analogous component.In general, only description is closed
In the difference of individual embodiments.Otherwise the description of the part in an embodiment or aspect is also suitable unless otherwise specified,
Corresponding portion in another embodiment or aspect.
Fig. 1 is configured to for keeping the section of the substrate carrier 100 of substrate 10 to show during depositing materials on substrates
It is intended to.Substrate carrier 100 can be used for carrying substrate 10 by the vacuum flush system that is described in more below, therefore also may be used herein
Referred to as " substrate support " or " substrate holder ".In Fig. 1, substrate 10 is schematically indicated to be maintained at substrate carrier
Rectangle on 100 support surface 102.
It, can during processing at least temporarily in some embodiments that can be combined with other embodiment as described herein
Ground keeps substrate 10 at support surface 102 with substantially vertical orientation.For example, during transporting through vacuum flush system
And/or during the deposition process, orientation that can be substantially vertical keeps substrate, wherein material to be deposited on substrate.
As used herein, " substantially vertical " can be understood as the orientation of substrate, the wherein main surface of substrate
(enclose) is surrounded from 0 ° to +/- 20 ° of angle, especially from 0 ° to +/- 10 ° or smaller with vertical direction (gravity vector).
The orientation of substrate may not be (accurately) vertical during deposition, but is slightly slanted relative to vertical axis, for example, with
Angle of inclination between 0 ° and -5 ° is slightly slanted.Negative angle indicates substrate towards orientation slightly downwards.This and vertical direction
Deviation may be beneficial because and vertical direction have the substrate orientation of some deviations that more stable substrate may be caused heavy
Product, or substrate downwards are orientated and may be suitable for reducing the particle on substrate during deposition.However, (accurately) is vertical
It is also possible to be orientated.
Therefore, the support surface 102 of substrate carrier 100 can also be temporarily, at least substantially perpendicular during the processing of substrate
Directly it is orientated.Large-area substrates are kept to be challenging with substantially vertical orientation, because substrate may be due to substrate
Weight and be bent, grip force (grip force) insufficient situation lower substrate may from support surface slide and/or base
Plate may be moved relative to the mask being positively retained at before substrate.
In some embodiments, can substrate, example temporarily, at least be kept with substantially horizontal orientation during processing
Such as in position downwards.For example, in substantially horizontal support surface substrate can be kept downwardly over.The face of substrate
It may be advantageous for downward position, so that the particle intake (uptake) on substrate surface is maintained at minimum limit.
In some embodiments, substrate carrier 100 can be moveable, for example, in vertical orientation and non-vertical
Orientation (such as horizontal orientation) between can pivot.For example, substrate can be placed in non-vertical orientation
On support surface 102 and absorption (chuck) is to support surface 102, then can be by the substrate carrier of the substrate with absorption
100 are moved in substantially vertical orientation, such as using swing (swing-up) module, and substrate can be substantially perpendicular
It transmits and/or is further processed in straight orientation.It in some embodiments, can be (such as horizontal in non-vertical orientation
Be orientated) in substrate is discharged and is removed from support surface.
In some cases, such as in order to which substrate is transferred in and out vacuum deposition system.It during processing, can be by substrate
Another substrate carrier is handed over to from substrate carrier (such as stop substrate carrier) in systems or under vacuum.
Substrate 10 can be supported on substrate carrier 100 during transmission and/or processing, for example, during layer deposits,
During loading during transmitting substrate by vacuum flush system or from vacuum chamber and unload carried base board.When substrate is maintained at substrate
When at carrier, one or more thin layers can be deposited on substrate.For example, layer stacked structure (stack) (e.g., including extremely
A kind of few organic material) (for example, passing through evaporation) can be deposited on substrate.
According to the embodiment of the present disclosure, there is the in-line arrangement (in-line) of one or more transmission devices or divide
Batch processing system can be used for transmitting one or more substrate carriers together with respective substrate along transmitting path.One
In a little embodiments, transmission device can be set as the magnetic suspension system for substrate carrier to be maintained to suspended state.Optionally,
In-line arrangement processing system can use Magnetic driving system, the Magnetic driving system to be configured to for being transmitted along transmitting path
It is moved in direction or conveying substrate carrier.Magnetic driving system may be embodied in magnetic suspension system, or can be set as individual
Entity.
In some embodiments, mechanical transmission system can be provided.The conveyer system may include for transmitting
The roller that substrate carrier is transmitted in direction, wherein the driving for rotating roller can be provided.Mechanical transmission system can be easy to real
It applies, is sturdy and durable and easy to maintain.
It in some embodiments, can be in the support surface of substrate carrier 100 on substrate during depositing coating material
Substrate 10 is kept at 102.In being vacuum-treated chamber, such as chemical vapor deposition (CVD) system, physical vapour deposition (PVD) (PVD)
System, e.g. sputtering system and/or vapo(u)rization system are developed to coat for example for the substrate of display application (for example, thin
Glass substrate).In typical vacuum flush system, each substrate can be kept by substrate carrier, and substrate carrier can lead to
It crosses respective transmission device and transports through vacuum processing chamber.Substrate carrier can be moved by transmission device so that substrate
At least part main surface is exposed towards coating unit, and coating unit is, for example, sputter equipment or evaporator (evaporator) dress
It sets.The main surface of substrate can be coated with scumbling coating, while substrate can be positioned in can move through substrate at a predetermined velocity
Coating unit front.Alternatively, substrate can at a predetermined rate be transmitted by coating unit.
Substrate 10 can be inflexible substrate, such as the piece of the transparent crystal of chip, such as sapphire or the like
(slice), glass substrate or ceramic wafer.However, present disclosure is without being limited thereto, and term substrate can also include flexible base
Plate, such as coiled material (web) or foil (foil) (such as metal foil or plastic foil).
In some embodiments, substrate can be large-area substrates.Large-area substrates can have 0.5m2Or the table of bigger
Area.Specifically, large-area substrates are displayed for device manufacture, and can be glass or plastic base.For example, such as this
Substrate described in text should include commonly used in the base of LCD (liquid crystal display), PDP (plasma display panel) and analog
Plate.For example, it is 1m that large-area substrates, which can have area,2Or the main surface of bigger.In some embodiments, large-area substrates
Can (correspond to about 0.67m in the 4.5th generation2Substrate (0.73 × 0.92m)), the 5th generation (correspond to about 1.4m2Substrate
(1.1m × 1.3m)) or bigger.Large-area substrates can also be that the 7.5th generation (corresponded to about 4.29m2Substrate (1.95m ×
2.2m)), in the 8.5th generation, (corresponded to about 5.7m2Substrate (2.2m × 2.5m)), or even the 10th generation (correspond to about 8.7m2's
Substrate (2.85m × 3.05m)).In even greater generation such as the 11st generation and the 12nd generation and corresponding substrate area, can be similarly real
It is existing.In some embodiments, have down to several square centimeters of surface area (such as 2cm × 4cm) and/or various individual shapes
The array of reduced size substrate can be positioned on single substrate carrier.
In some embodiments, substrate can be 1mm or more in the thickness in the direction of the main surface of substrate
It is small, for example, from 0.1mm to 1mm, especially from 0.3mm to 0.8mm, such as 0.7mm.Thinner substrate is possible.Thickness is
The processing of 0.5mm or thinner thin substrate may be challenging.
In view of good coating as a result, substrate to be maintained on the support surface 102 of substrate carrier 100 thus avoid
The movement of substrate and/or mask may be beneficial during deposition.With the increase of substrate size and the reduction of coating structure, base
Plate is on a support surface and the accurate positionin relative to mask and mask become increasingly to have relative to the accurate positionin of substrate
Challenge.
According to embodiment as described herein, substrate carrier 100 includes electrostatic chuck 120 and magnetic chuck 130, and electrostatic is inhaled
Disk 120 is configured to for attracting support surface 102 of the substrate towards substrate carrier 100, magnetic chuck 130 to be configured to be used for
Attract the support surface 102 of mask 20 and/or mask frame 25 towards substrate carrier 100.Electrostatic chuck 120 and magnetic chuck
130 are incorporated into the carrier element 101 of substrate carrier 100.
During substrate processing, electrostatic chuck 120 (also referred herein as " electronics sucker (e-chuck) ") can be used for base
Plate 10 attracts the support surface 102 to substrate carrier 100.For example, substrate may include that can will for example be drawn by electrostatic force
To the material of the dielectric material of support surface so that substrate can be moved to and be in direct contact with support surface 102.It can also be in height
Keep substrate in vacuum environment during warm technique, coating processes and plasma process.
Magnetic chuck 130 can be used for attracting mask 20 towards the substrate 10 being maintained on support surface 102.Specifically
Ground, during deposition, in order to which the shadowing effect (shadowing effects) of mask, substrate 10 and mask 20 is reduced or avoided
Between close distance it may be advantageous.For example, mask 20 can be attracted by magnetic chuck 130 towards branch during deposition
Support surface 102 so that at least part of mask 20 is in direct contact with substrate 10.Shadowing effect can be reduced.After deposition,
Magnetic chuck 130 can discharge mask 20 from substrate 10 so that mask and substrate can be separated from each other without adversely shadow
Ring the patterns of material being deposited on substrate.
In some embodiments, mask 20 include magnetism can attractive material, such as metal so that mask can be magnetic
The magnetic force that sucker 130 generates attracts.For example, mask 20 is metal mask, especially fine metal mask.Mask 20 can be consolidated
It is scheduled on mask frame 25, such as mask frame 25 is permanently attached to by welding.For example, mask frame 25 can be formed as
The frame of mask is kept around mask and at the periphery edge of mask.In some embodiments, mask frame 25 also may be used
It can attractive material with the magnetism including such as metal so that mask frame can also be attracted via magnetic chuck 130 towards branch
Support surface.
Magnetic chuck 130 and electrostatic chuck 120 are incorporated into shared (common) carrier element of substrate carrier 100.Example
Such as, electrostatic chuck 120 can be embedded in the first inner space of carrier element 101, and magnetic chuck 130 can be embedded in carrier element
In 101 the second inner space.Alternatively or additionally, electrostatic chuck 120 and magnetic chuck 130 are strongly attached to identical
Carrier, such as by being attached or being fixed to identical carrier element by both electrostatic chuck 120 and magnetic chuck 130 so that energy
It is enough to regard electrostatic chuck 120 and magnetic chuck 130 as individual unit transmission and movement.
For example, in some embodiments that can be combined with other embodiment as described herein, carrier element 101 can shape
As being disposed with the whole harden structure of both electrostatic chuck 120 and magnetic chuck 130.
In some embodiments that can be combined with other embodiment disclosed herein, carrier element 101 includes first
Dielectric body, wherein one or more electrodes of electrostatic chuck 120 are embedded in the first dielectric body.First dielectric body can be by
Dielectric material is made, and dielectric material is, for example, such as pyrolytic boron nitride (pyrolytic boron nitride), aluminium nitride, nitrogen
The high heat conductance dielectric material of SiClx, aluminium oxide or same material, the e.g. material based on heat-resistant polymer, such as based on
The material of polyimides or other organic materials.The electrode of electrostatic chuck can be connected respectively to power supply, such as voltage source, voltage
Predetermined voltage can be applied to electrode to generate scheduled electrostatic grip force by source.
In some embodiments, one or more magnets of magnetic chuck 130 can also be embedded in the first dielectric body
Or insertion could attach in the second dielectric body of the first dielectric body.
According to implementations described herein, including the magnetic chuck 130 of one or more magnets and including one or more
The electrostatic chuck 120 of a electrode can be configured to individual unit.It therefore, there is no need to individually move the magnet unit of such as magnetic sheet
To electronics sucker back side attracting mask towards substrate.But according to present disclosure, substrate carrier, which can be used as, includes
The individual unit of 130 the two of electrostatic chuck 120 and magnetic chuck is moved to precalculated position.Then, because of magnetic chuck 130 and quiet
Relative position between electric sucker 120 is fixed and is suitably limited, it is possible to via the magnetic on correct position
Mask is adsorbed on substrate by property sucker 130.
Fig. 2 is the schematic diagram according to the substrate carrier 200 of some embodiments described herein.The substrate carrier 200 of Fig. 2
Similar to the substrate carrier 100 of Fig. 1, therefore the above embodiment can be referred to, details are not described herein.It is incorporated into substrate carrier
Electrostatic chuck 120 and magnetic chuck 130 in 200 carrier element 101 are described in more detail in fig. 2.
In some embodiments, electrostatic chuck 120 may include one or more electrodes 210, and electrode 210 can be constructed
To generate the predetermined electrostatic grip force that can be adjusted.One or more electrodes 210 may be coupled to the first power supply 212, such as
Apply the high-voltage power supply of high voltage to one or more electrodes 210.
Electrostatic chuck 120 can be configured to monopole sucker, bipolar sucker or multipole sucker." monopole sucker " can be understood as wrapping
The electrostatic chuck for the one or more electrodes that may be connected to power supply is included, power supply is, for example, high-voltage power supply.The power supply be configured to
One or more electrodes provide unipolar voltage.For example, according to some that can be combined with other embodiment as described herein
Positive voltage can be applied to one or more electrodes of electrostatic chuck so that on the support surface of substrate carrier by embodiment
Induce negative electrical charge.Alternatively, negative voltage can be applied to one or more electrodes so that feel on the support surface of substrate carrier
Positive charge should be gone out.
" bipolar Suction cup assembly " can be understood as including may be connected to power supply at least one first as used herein
The electrostatic chuck of electrode and at least one second electrode, power supply are, for example, high-voltage power supply.Power supply is configured to provide to first electrode
First polar voltage, and provide the second polar voltage to second electrode.For example, negative voltage can be applied to the first electricity
Pole, and positive voltage can be applied to second electrode, vice versa.It therefore, can be by electrostatic induction in support surface 102
Place generates corresponding electronegative region and corresponding positively charged region.In some embodiments, it provides symmetrical bipolar
Property voltage.
In multipole Suction cup assembly, can provide can independent control multiple electrodes.
The electrostatic chuck 120 of Fig. 2 includes at least one first electrode and at least one second electrode, wherein via the first electricity
Source 212, positive voltage (+) is applied to first electrode and negative voltage (-) is applied to second electrode, and the first power supply 212 is for example
It is high-voltage power supply.In some embodiments, at least one first electrode can interlock at least one second electrode, to increase
The grip force provided by electrostatic chuck.Alternatively or additionally, first electrode and second electrode can be alternately arranged.For example, quiet
Electric sucker 120 may include positively charged in an alternating manner and negative electricity a plurality of electric wire (wires).
In some embodiments, magnetic chuck 130 is the magnechuck for including one or more magnets 231, magnet 231
It is configured to electromagnet, such as including coil, for generating magnetic field.Second source 215 can be provided to come for one or more magnets
231 power supplies.Electric connection line 232 can be provided to come for by the respective coil of second source 215 and one or more electromagnets
Winding (coil windings) (not being painted in fig. 2) connects.In some embodiments, it is directed toward the adjacent magnetic of support surface
The polarity of body can be opposite.Particularly, magnet may be disposed so that the polarity for each adjacent magnets for being directed toward support surface is
Opposite polarity.For example, the winding of adjacent electromagnet can be inverted respectively, thus provide being alternately arranged for winding, such as Fig. 2 institutes
Show.
First power supply 212 and second source 215 can be integrated into the single power supply with different output ends, be used for individually simultaneously
And it independently is magnetic chuck 130 and the power supply of electrostatic chuck 120.
Electrostatic chuck 120 and magnetic chuck 130 can be controlled with independent operation and/or by controller unit, institute
State controller unit can be configured to control absorption time (timing) of mask, the time of sorbing substrate, release mask when
Between, the time of release substrate, the adsorption capacity of substrate and/or mask adsorption capacity.
In some embodiments that can be combined with other embodiment as described herein, one of magnetic chuck 130 or
Multiple magnets 231 may be arranged at the first distance D1 of support surface 102.When one or more magnets of electrostatic chuck
231 and one or more electrodes 210 when being incorporated into identical carrier element, between one or more magnets 231 and support table
The first distance D1 between face 102 can be small distance.For example, the first distance D1 can be 10cm or smaller, especially 5cm
Or smaller, more particularly 3cm or smaller.
Magnetic chuck 130 is arranged at the close distance of support surface 102 in the carrier element 101 apart from substrate carrier,
The magnetic force generated by magnetic chuck at the position of mask 20 can be increased so that mask and/or mask frame are by more reliably
Attract towards support surface.Particularly as increased magnetic force as a result, the fringe region of mask 20 can also be pulled to and base
Plate is in direct contact or close to substrate.
In some embodiments, one or more electrodes 210 of electrostatic chuck 120 are arranged in apart from carrier element 101
In support surface 102 second distance D2 at.When one or more electrodes 210 are incorporated at the position close to support surface
When in carrier element 101, the second distance D2 between one or more electrodes 210 and support surface 102 can be small
Distance.For example, second distance D2 can be 8cm or smaller, especially 4cm or smaller, more particularly 1cm or smaller.
Second distance D2 can be less than the first distance D1.Particularly, one or more electrodes 210 can be than one or more
Magnet 231 is arranged closer to support surface.For example, the difference between the first distance D1 and second distance D2 can be 5cm or more
It is small, especially 2cm or smaller.In other words, electrode 210 can arrange that magnet 231 can be one adjacent to support surface 102
It is arranged at distance 210 such as 2cm or smaller distances of one or more electrodes behind a or multiple electrodes 210.Hereby it is possible to
Substrate is reliably attracted towards support surface 102, mask 20 can reliably be attracted towards substrate 10.
In some embodiments, second distance D2 is substantially equal to the first distance D1.For example, the electricity of electrostatic chuck
At the identical distance of support surface that the magnet of pole and magnetic chuck can be located in carrier element, for example, to interlock or hand over
The mode replaced.In some embodiments, second distance D2 can be less than the first distance D1.In other words, the magnetic of electrostatic chuck
Body can be arranged than the electrode of electrostatic chuck closer to support surface.The magnetic force at mask position can be increased.
Fig. 3 is the schematic diagram according to the substrate carrier 300 of some embodiments described herein.The substrate carrier 300 of Fig. 3
It can be similar to the substrate carrier of Fig. 1 and Fig. 2, therefore it may be referred to the above embodiment, details are not described herein.Substrate carrier
300 include the magnetic chuck 130 with two or more adsorption zones.For example, magnetic chuck 130 may include can independent control
Multiple adsorption zones.
Substrate carrier 300 includes electrostatic chuck 120 with one or more electrodes and with one or more magnets (spies
Not electromagnet) magnetic chuck 130, one or more of electrodes are used to attract substrate 10 towards support surface 102, institute
One or more magnets are stated for attracting mask 20 and/or mask frame towards substrate carrier.Electrostatic chuck 120 and magnetic suction
Disk 130 may be integrally incorporated in the carrier element 101 of substrate carrier 100.
In some embodiments that can be combined with other embodiment as described herein, magnetic chuck 130 includes first
Adsorption zone 132 and the second adsorption zone 134, the first adsorption zone 132 are configured to for being produced in the first area of support surface 131
Raw first magnetic field, the second adsorption zone 134 are configured to for generating the second magnetic field in the second area 133 of support surface.Example
Such as, the first adsorption zone 132 can be arranged in the interior zone of carrier element 101, and be configured in support surface 102
Central area in generate the first magnetic field and/or the second adsorption zone 134 and can be arranged in the outside area of carrier element 101
It in domain, and is configured to generate the second magnetic field in the neighboring area of support surface 102, the neighboring area can be at least
Partially around central area.
In some embodiments, the first adsorption zone 132 of magnetic chuck 130 can be constructed and arranged to attract mask 20
First part's central part of mask (be, for example) towards the first area 131 of support surface.The second of magnetic chuck 130 inhales
Attached area 134 can be constructed and arranged the second part exterior section or edge 22 of mask (be, for example) to attract mask and/or
Second area 133 of the mask frame 25 towards support surface.Particularly, the second area 133 of support surface can partly or
Completely about first area 131.
In some embodiments, the second adsorption zone 134 can be with the shape of frame, and the shape of frame, which has, to be adaptable to
It keeps the size of the mask frame 25 of mask or is adaptable to the frame size of the size of the fringe region of mask.
First adsorption zone 132 may include multiple first electromagnets being arranged in the interior zone of carrier element 101, and
And/or the second adsorption zone of person 134 may include multiple second electromagnets 101 being arranged in the perimeter of carrier element 101,
It perimeter can be partially or wholly around interior zone.Multiple second electromagnets may be arranged to have around multiple the
The array of the shape of the frame of one electromagnet.
In some embodiments, power supply 140 can be provided to be used at least one first electromagnetism for the first adsorption zone 132
At least one second electromagnet of body and the second adsorption zone 134 is powered.Particularly, at least one electromagnet can be only by power supply 140
Stand at least one second electromagnet power supply.Accordingly, the first magnetic force of the first adsorption zone 132 may be set to the first value, and second inhales
Second magnetic force in attached area may be set to second value, and second value can be different from the first value.
Power supply can be provided on substrate carrier so that power supply can be moved together and be transmitted with substrate carrier.Alternatively, electric
Source can be set as individual unit, for example, outside the vacuum chamber of depositing device.For example, can be provided on substrate carrier
Electric contact by the electromagnet of magnetic chuck and is externally arranged when for being located at the designated position for deposition when substrate carrier
Power supply is electrically connected.
The edge 22 of mask 20 is typically secured to that the mask frame 25 of mask can be surrounded.Typically, mask frame can be with
With the quality than mask bigger, and mask frame may be bent due to gravity, especially when mask frame is with substantially
When (+/- 10 °) vertical of orientation is arranged.Mask frame is bent due to gravity may lead to have gap between substrate and mask.
For example, due to gravity, the edge 22 of the mask fixed to mask frame may be drawn out together with mask frame from substrate.Mask
This gap between substrate may cause the shadowing effect of mask during deposition, this, which is negatively affected, is deposited on substrate
Pattern.
Although the magnetic force of magnetic chuck may be enough to attract the central part of mask towards substrate, magnetic chuck
Magnetic force may be too low and cannot attract at the edge 22 of mask frame 25 and/or mask towards substrate during deposition, for example, by
In the quality bigger of mask frame.According to implementations described herein, by the way that magnetic chuck and electronics sucker are incorporated into one
It rises, magnetic force of the magnetic chuck at mask position can be increased.
According to another aspect described herein, the edge 22 and/or mask frame 25 of mask can be by the second adsorption zones 134
The second magnetic force generated attracts towards support surface.The value of second magnetic force can be different from generated by the first adsorption zone 132
The value of one magnetic force.It is enough to attract the central part of mask into the towards substrate for example, can generate in view of the first adsorption zone 132
One magnetic force, the second adsorption zone 134, which can generate, to be enough to attract at the edge 22 of mask and/or mask frame 25 towards substrate more
The second strong magnetic force.It can reduce or avoid completely the shadowing effect during deposition.
According to some embodiments, the first adsorption zone 132 can be configured to for attracting mask, and the second adsorption zone 134 can
It is configured to for attracting mask frame.First adsorption zone 132 and the second adsorption zone 134 can independent controls.For example,
The electric current for the electromagnet for being conducted through the first adsorption zone can be suitably set, and be conducted through the electromagnet of the second adsorption zone
Electric current may be set to different values.Therefore, deposited picture can be improved and shadowing effect can be reduced.
Fig. 4 is the depositing device 400 for being deposited on material on substrate according to some embodiments described herein
Schematic diagram.Depositing device may include according to the substrate carrier of any embodiment as described herein, for example, the substrate of Fig. 1
Carrier 100.Depositing device 400 further includes sedimentary origin 150, such as vaporising device, and the sedimentary origin 150 is configured to for by material
Material 105 is deposited on the substrate 10 kept by substrate carrier 100.
Depositing device 400 can also include vacuum chamber 410, and wherein sedimentary origin 150 and substrate carrier 100 is arranged in vacuum
In chamber.Sedimentary origin 150 can be vaporising device, and the vaporising device includes crucible for accommodating material to be evaporated and is used for
The material of evaporation is directed towards at least one distribution pipe of multiple openings in distribution pipe, the multiple opening is directed toward substrate
10。
Sedimentary origin 150 can be located on moveable support element so that sedimentary origin 150 can move through during evaporation
Substrate 10.
Substrate carrier 100 can be arranged so that when substrate is maintained on the support surface of substrate carrier, vertical direction with
Angle [alpha] between substrate is between 0 ° and -10 °.Particularly, substrate can be arranged so that surface to be coated during deposition slightly
It is micro- downwards.Less granular generation can be subtracted.
Using electrostatic chuck 120 by substrate adsorption towards the support surface of substrate carrier, and will using magnetic chuck 130
Mask attracts towards support surface.Electrostatic chuck 120 and magnetic chuck 130 are incorporated into the carrier element of substrate carrier.
Magnetic chuck 130 may include multiple adsorption zones, and wherein at least one outside adsorption zone can be configured to attract
The exterior section of mask frame and/or mask, and at least one internal adsorption zone can be configured to attract the center of mask
Part.By being suitable value by the magnetic field set of external adsorption zone, the gap between mask edge and substrate can be reduced
450。
Fig. 5 is the flow chart of the method for illustrating the processing substrate according to another aspect described herein.In box 510
In, using the electrostatic chuck 120 being incorporated into the carrier element of substrate carrier by substrate attract towards substrate carrier support table
Face.
For example, substrate can be placed into non-vertical orientation on support surface, it can then start electrostatic chuck, and
And substrate carrier can rotate to for example substantially vertical orientation (+/- 20 °).
When substrate is maintained at the support surface of substrate carrier, substrate carrier can be transmitted in vacuum flush system,
Such as the vacuum chamber into depositing device.For example, substrate carrier can be moved to substrate in depositing device, wherein sedimentary origin
It may be arranged in depositing device.
In box 520, mask 20 is arranged in the front of substrate.Mask can be relative to base plate alignment, thus establishes base
Predetermined relative location between plate and mask.For example, coarse alignment and subsequent fine alignment may insure between mask and substrate
Position deviation in upper and lower directions and/or left and right directions is respectively 10 μm or hereinafter, especially 3 μm or less.
Then in box 530, it can utilize and be incorporated into magnetic chuck 130 in the carrier element of substrate carrier by mask
20 and/or the mask frame 25 of mask is kept to attract towards support surface.For example, at least part of mask or entire mask can
To be pulled to substrate so that mask is in direct contact with substrate.
In box 540, material can be deposited on substrate, for example, utilizing vaporising device.When mask-placement is in substrate
Front when, the patterns of material of the patterns of openings according to mask can be formed on substrate.
After deposition, by deactivating magnetic chuck at least partly, mask can be discharged from substrate.Mask and substrate
It can separate.
Then, substrate can be passed out depositing device, and/or can be by deactivating electrostatic chuck from support table
It face desorption and removes.
Before the deposition, the first adsorption zone 132 of magnetic chuck can be utilized to attract mask 20 towards substrate carrier
Support surface so that mask contacts substrate 10 at least partly.Particularly, the central part of mask can be by the first adsorption zone
132 magnetic field suctions generated are towards substrate.The second adsorption zone 134 of magnetic chuck can be utilized the exterior section of mask or side
Edge and/or mask frame 25 attract the support surface towards substrate carrier.Second adsorption zone 134 can be arranged in carrier element
And/or it can be at least partly around the first adsorption zone 132 in neighboring area.
In some embodiments that can be combined with other embodiment as described herein, magnetic chuck is magnechuck,
And the first adsorption zone is powered with the first power, and the second adsorption zone different from the second power of the first power to power.
In some embodiments, the edge of mask 20 is fixed to mask frame 25, and in addition to the first adsorption zone 132
Except also reduce the gap 450 between the edge of mask and substrate by starting the second adsorption zone 134.
Angle [alpha] during deposition between vertical direction and substrate is between 0 ° and -20 °, especially in -1 ° and -5 °
Between when, material can be deposited on substrate.Particularly, substrate can be arranged to during deposition with the inclination between -1 ° and -5 °
Angle slopes slightly downward.Less granular generation can be subtracted.
Although foregoing teachings are directed to the embodiment of present disclosure, the basic of present disclosure can not departed from
Other and further embodiment of present disclosure are designed in the case of range, and scope of the present disclosure by being appended
Claims determine.
Claims (15)
1. substrate carrier (100) of the one kind for keeping substrate (10) during deposition, including:
Electrostatic chuck (120) is configured to for attracting support surface (102) of the substrate towards the substrate carrier (100);With
Magnetic chuck (130) is configured to for attracting mask (20) and/or mask frame (25) towards the substrate carrier
(100) the support surface (102),
The wherein described electrostatic chuck (120) and the magnetic chuck (130) are incorporated into the carrier element of the substrate carrier (100)
(101) in.
2. substrate carrier as described in claim 1, wherein one or more magnets of the magnetic chuck (130) be arranged in away from
With a distance from first of support surface (102) in carrier element (101) at (D1), wherein first distance (D1) be 10cm or
Smaller, especially 5cm or smaller, more particularly 2cm or smaller.
3. substrate carrier as claimed in claim 2, wherein one or more electrodes (210) cloth of the electrostatic chuck (120)
Set at the second distance (D2) of the support surface (102) in the carrier element (101), wherein described second away from
It is less than with a distance from described first (D1) from (D2), between especially wherein described first distance (D1) and the second distance (D2)
Difference is 2cm or smaller.
4. substrate carrier as claimed any one in claims 1 to 3, wherein the carrier element (101) is formed as integral slab
Structure, the electrostatic chuck (120) and the magnetic chuck (130) are arranged in the whole harden structure.
5. substrate carrier according to any one of claims 1 to 4, wherein the magnetic chuck (130) be include one or
The magnechuck of multiple electromagnets.
6. the substrate carrier as described in any one of claim 1 to 5, wherein the magnetic chuck (130) includes being configured to
The first adsorption zone (132) for generating the first magnetic field in the first area of the support surface (131), and be configured to use
In the second adsorption zone (134) for generating the second magnetic field in the second area (133) of the support surface.
7. substrate carrier as claimed in claim 6 further comprises that power supply (140), the power supply (140) are configured to independence
In second adsorption zone (134) at least one second electromagnet at least one the first of first adsorption zone (132)
Electromagnet is powered.
8. substrate carrier as claimed in claims 6 or 7, wherein first adsorption zone (132) is configured to cover described in attraction
Mould (20) is configured to towards the first area (131) of the support surface, second adsorption zone (134) described in attraction
The edge (22) of mask and/or keep the mask frame (25) of the mask towards secondth area of the support surface
Domain (133), the second area (133) is partially or wholly around the first area (131).
9. the substrate carrier as described in any one of claim 6 to 8, wherein first adsorption zone (132) includes being arranged in
Multiple first electromagnets in the interior zone of the carrier element (101) and/or second adsorption zone (134) packet
Include multiple second electromagnets being arranged in the perimeter of the carrier element (101).
10. a kind of depositing device (400) in depositing materials on substrates, including:
Substrate carrier (100) according to any one of the preceding claims;With
Sedimentary origin (150) is configured to for the deposition materials (105) on the substrate (10) kept by the substrate carrier.
11. a kind of method of processing substrate, including:
Substrate (10) is attracted described in using the electrostatic chuck (120) being incorporated into the carrier element (101) of substrate carrier
The support surface of substrate carrier;
In the front of substrate arrangement mask (20);With
Attract the mask using the magnetic chuck (130) being incorporated into the carrier element (101) of the substrate carrier
(20) and/or keep the mask frame (25) of the mask towards the support surface.
12. method as claimed in claim 11, wherein using the first adsorption zone (132) of the magnetic chuck by the mask
(20) attract the support surface towards the substrate carrier so that the mask contacts the substrate at least partly
(10), and wherein utilize the second adsorption zone (134) of the magnetic chuck by the edge of the mask and/or the mask frame
Frame attracts the support surface towards the substrate carrier.
13. method as claimed in claim 12, wherein the magnetic chuck is magnechuck, and first adsorption zone
(132) it is powered with the first power, and second adsorption zone (134) different from the second power of first power to supply
Electricity.
14. method as described in claim 12 or 13, wherein the edge of the mask is fixed to the mask frame
(25), and wherein by start second adsorption zone (134) reduce the mask the edge and the substrate it
Between gap (450).
15. the method as described in any one of claim 11 to 14, further comprises:
Deposition materials on the substrate, wherein during deposition, the angle (α) between vertical direction and the substrate is at 0 °
And between -10 °, especially between -1 ° and -5 °.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/052049 WO2018141366A1 (en) | 2017-01-31 | 2017-01-31 | Substrate carrier and method of processing a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108701630A true CN108701630A (en) | 2018-10-23 |
Family
ID=57956291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780005584.3A Pending CN108701630A (en) | 2017-01-31 | 2017-01-31 | The method of substrate carrier and processing substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6640878B2 (en) |
| KR (2) | KR20180109662A (en) |
| CN (1) | CN108701630A (en) |
| TW (1) | TW201830572A (en) |
| WO (1) | WO2018141366A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813381A (en) * | 2019-11-15 | 2021-05-18 | 佳能特机株式会社 | Film forming apparatus |
| CN113519046A (en) * | 2019-03-07 | 2021-10-19 | 应用材料公司 | Mask frame assembly, carrier for mask frame and method for processing mask |
Families Citing this family (5)
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| KR20200038345A (en) * | 2018-10-02 | 2020-04-13 | 삼성디스플레이 주식회사 | Deposition apparatus apparatus |
| JP7249142B2 (en) * | 2018-12-14 | 2023-03-30 | キヤノントッキ株式会社 | Transport carriers, vapor deposition equipment, and electronic device manufacturing equipment |
| JP7292141B2 (en) * | 2019-07-25 | 2023-06-16 | 三菱電機株式会社 | Rotor Manufacturing Apparatus, Rotor Manufacturing Method, and Permanent Magnet Motor Manufacturing Method |
| KR102695653B1 (en) * | 2021-11-10 | 2024-08-20 | 주식회사 선익시스템 | In-line deposition system having mask chucking mechanism with a lifting module |
| WO2023160836A1 (en) * | 2022-02-25 | 2023-08-31 | Applied Materials, Inc. | Substrate support assembly, substrate processing apparatus method for fixing an edge support frame to a table frame, and method of manufacturing a portion of a display device |
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Also Published As
| Publication number | Publication date |
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| WO2018141366A1 (en) | 2018-08-09 |
| KR20180109662A (en) | 2018-10-08 |
| KR20200102557A (en) | 2020-08-31 |
| JP6640878B2 (en) | 2020-02-05 |
| JP2019510360A (en) | 2019-04-11 |
| TW201830572A (en) | 2018-08-16 |
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