CN111378925B - Alignment system, film forming apparatus, film forming method, and method for manufacturing electronic device - Google Patents

Alignment system, film forming apparatus, film forming method, and method for manufacturing electronic device Download PDF

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Publication number
CN111378925B
CN111378925B CN201911375574.6A CN201911375574A CN111378925B CN 111378925 B CN111378925 B CN 111378925B CN 201911375574 A CN201911375574 A CN 201911375574A CN 111378925 B CN111378925 B CN 111378925B
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substrate
mask
film forming
alignment system
alignment
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CN111378925A (en
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金内正信
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

The invention relates to an alignment system, a film forming apparatus, a film forming method, and a method for manufacturing an electronic device. When a divided substrate cut from a large substrate is conveyed into a film forming apparatus to form a film, the reduction of alignment accuracy is suppressed. The alignment system of the present invention has: a substrate supporting unit for supporting a substrate; a mask supporting unit for supporting a mask; a position adjustment mechanism for adjusting a relative position of the substrate supported by the substrate support unit and the mask supported by the mask support unit; and a control unit that controls the position adjustment mechanism, wherein the substrate is cut out from a large substrate, and the control unit controls the position adjustment mechanism based on cut-out information indicating from which position of the large substrate the substrate is cut out.

Description

Alignment system, film forming apparatus, film forming method, and method for manufacturing electronic device
Technical Field
The invention relates to an alignment system, a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.
Background
Recently, as a flat panel display device, an organic EL display device has been attracting attention. The organic EL display device is superior to a liquid crystal panel display in characteristics such as response speed, viewing angle, and thinning as a self-luminous display, and is rapidly replacing a conventional liquid crystal panel display in monitors, televisions, various portable terminals typified by smartphones, and the like. In addition, the application field thereof is also expanded to displays for automobiles and the like.
An organic light-emitting element (organic EL element: OLED) constituting an organic EL display device has a basic structure in which an organic layer that emits light is formed between two opposing electrodes (cathode electrode, anode electrode). The organic layer and the electrode metal layer of the organic EL element are produced by depositing a deposition material on a substrate in a vacuum chamber through a mask having a pixel pattern formed therein. In order to deposit a vapor deposition material in a desired pattern on a desired position on a substrate, first, when the substrate is fed into a film forming apparatus, the substrate needs to be stably received at a desired position. In addition, before vapor deposition is performed on the substrate, it is necessary to precisely align (align) the relative positions of the mask and the substrate.
In recent production lines of organic EL display devices, after a pretreatment process such as cleaning and circuit formation is performed for a large substrate (also referred to as mother glass) of a full size, the large substrate is divided into, for example, two half sizes to be a half-cut substrate (divided substrate). In some cases, each of these half-cut substrates is transported to a film forming apparatus, and a film forming process for forming each layer such as an organic layer is sequentially performed. For example, in a film forming apparatus using a sixth generation half-cut-sized substrate in the manufacture of a display panel of an organic EL display device for a smart phone, a half-cut substrate (about 1500mm×about 925 mm) obtained by dividing a full-sized substrate of about 1500mm×about 1850mm into two is conveyed into the film forming apparatus to form a film.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2014-227604
Disclosure of Invention
Problems to be solved by the invention
As a result of intensive studies, the present inventors have found that, in the film formation for such a divided substrate, depending on which portion of the mother glass (for example, a portion of the left half portion or a portion of the right half portion of the mother glass) is cut out from the divided substrate, the movement between the substrates may affect the alignment accuracy when the divided substrate is conveyed into the film forming apparatus or aligned with the mask.
The present invention provides a technique for suppressing a decrease in alignment accuracy when a divided substrate cut from a large substrate is transferred into a film forming apparatus to form a film.
Means for solving the problems
An alignment system according to an embodiment of the present invention includes: a substrate supporting unit for supporting a substrate; a mask supporting unit for supporting a mask; a position adjustment mechanism for adjusting a relative position of the substrate supported by the substrate support unit and the mask supported by the mask support unit; and a control unit that controls the position adjustment mechanism, wherein the substrate is cut out from a large substrate, and the control unit controls the position adjustment mechanism based on cut-out information indicating from which position of the large substrate the substrate is cut out.
Effects of the invention
According to the present invention, when a divided substrate cut out from a large substrate is conveyed into a film forming apparatus to form a film, a reduction in alignment accuracy can be suppressed.
Drawings
Fig. 1 is a schematic view of a part of a production line of an organic EL display device.
FIG. 2 is a schematic view of a film forming apparatus.
Fig. 3 is a schematic view of a substrate supporting unit.
Fig. 4 (a) to (c) are diagrams for explaining the first alignment step.
Fig. 5 (a) to (d) are diagrams showing the movement and clamping method of the substrate after the first alignment process is completed.
Fig. 6 (a) to (d) are diagrams for explaining the second alignment step.
Fig. 7 (a) to (c) are diagrams showing the movement and clamping method of the substrate after the second alignment step.
Fig. 8 (a) and (b) are diagrams for explaining offset correction when a substrate is received.
Fig. 9 (a) and (b) are schematic views showing the case where a mother glass is cut into two divided substrates.
Fig. 10 is a diagram showing a configuration in which offset value information unique to each divided substrate is recorded as a table in the offset information storage unit.
Fig. 11 (a) and (b) are an overall view of the organic EL display device and a cross-sectional view of elements of the organic EL display device.
Description of the reference numerals
10: substrate, 210: substrate supporting unit, 220: mask, 221: mask stage, 205: position adjustment mechanism, 270: control unit
Detailed Description
Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the accompanying drawings. However, the following embodiments and examples merely illustrate preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In the following description, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are not limited to those described in particular.
The present invention relates to a film forming apparatus for forming a thin film on a substrate and a control method thereof, and more particularly to a technique for performing highly accurate positional adjustment of a substrate. The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern on the surface of a substrate by vacuum vapor deposition. The substrate may be made of any material such as glass, resin, or metal, and the vapor deposition material may be made of any material such as an organic material or an inorganic material (metal, metal oxide, or the like). Specifically, the technique of the present invention can be applied to a manufacturing apparatus of an organic electronic device (for example, an organic EL display device, a thin film solar cell), an optical component, or the like. Among them, the manufacturing apparatus of the organic EL display device is one of preferred application examples of the present invention because of further improvement in alignment accuracy and speed between the substrate and the mask due to the increase in size of the substrate or the high definition of the display panel. The technique of the present invention can also be grasped as an alignment system for aligning a substrate and a mask. In this case, the alignment system is used for film forming chambers within a film forming group. The present invention can also be applied to a film forming apparatus and a film forming method which perform film formation by, for example, sputtering, other than vapor deposition.
< production line of electronic device >
Fig. 1 is a plan view schematically showing a part of a structure of a production line of electronic devices.
In the production line of fig. 1, for example, for manufacturing a display panel of an organic EL display device for a smart phone, a mother glass of the sixth generation (about 1500mm×about 1850 mm) is cut into half cut dimensions (about 1500mm×about 925 mm), and each divided substrate 10 is fed into a film formation group 1 to form an organic EL film.
As shown in fig. 1, a film formation group 1 of a production line of an organic EL display device generally includes a plurality of film formation chambers 110 for processing (for example, forming a film) a substrate 10, a mask storage chamber 120 for storing masks before and after use, and a transfer chamber 130 disposed at the center thereof.
In the transfer chamber 130, a transfer robot 140 for transferring the substrate 10 between the film forming chambers 110 and transferring the mask between the film forming chambers 110 and the mask stock chamber 120 is provided. The transfer robot 140 is, for example, a robot having a structure in which a robot arm for holding the substrate 10 or the mask is attached to a multi-joint arm.
Film formation group 1 is connected to: a passage chamber 150 for conveying the substrate 10 from the upstream side to the film formation group 1 in the conveying direction of the substrate 10, and a buffer chamber 160 for conveying the substrate 10, on which the film formation process is completed in the film formation group 1, to another film formation group on the downstream side. The transfer robot 140 of the transfer chamber 130 receives the substrate 10 from the passage chamber 150 on the upstream side and transfers the substrate to one film forming chamber 110 in the film forming group 1. The transfer robot 140 receives the substrate 10, in which the film formation process in the film formation group 1 is completed, from one of the film formation chambers 110, and transfers the substrate to the buffer chamber 160 connected to the downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided between the buffer chamber 160 and the passage chamber 150 on the further downstream side. Thus, the direction of the substrate is the same in the upstream side film forming group and the downstream side film forming group, and the substrate processing is facilitated.
The film forming chamber 110, the mask storage chamber 120, the transfer chamber 130, the buffer chamber 160, the spin chamber 170, and the like are maintained in a high vacuum state during the process of manufacturing the organic EL display panel.
Each of the film forming chambers 110 is provided with a film forming device (also referred to as a vapor deposition device). A series of film forming processes such as transfer of the substrate 10 to the transfer robot 140, adjustment (alignment) of the relative positions of the substrate 10 and the mask, fixing of the substrate 10 to the mask, and film forming (vapor deposition) are automatically performed by the film forming apparatus. The film forming apparatuses in the respective film forming chambers have different parts in terms of the fineness of the evaporation source, the evaporation material, the mask, and the like, but the basic structure (particularly, the structure related to the conveyance and alignment of the substrate) is generally used. Hereinafter, a general configuration of the film forming apparatus in each film forming chamber will be described. In the following description, the structure in which the film formation is performed in a state where the film formation surface of the substrate is oriented downward in the direction of gravity is described, but the structure is not limited thereto, and the structure may be a structure in which the film formation is performed in a state where the film formation surface of the substrate is oriented upward in the direction of gravity in the film formation, or a structure (side deposition) in which the film formation is performed in a state where the substrate stands vertically, that is, in a state where the film formation surface of the substrate is substantially parallel to the direction of gravity.
< film Forming apparatus >
Fig. 2 is a cross-sectional view schematically showing the structure of the film forming apparatus. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate is fixed parallel to the horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is denoted by θ.
The film forming apparatus has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum environment or an inert gas environment such as nitrogen gas. A substrate support unit 210, a mask 220, a mask stage 221, a cooling plate 230, and an evaporation source 240 are provided inside the vacuum chamber 200.
The substrate supporting unit 210 is a member for supporting and conveying the substrate 10 received from the conveying robot 140, and is also referred to as a substrate holder. The mask 220 is a metal mask having an opening pattern corresponding to a thin film pattern to be formed on the substrate 10, and is fixed to a frame-shaped mask stage 221 as a mask supporting means for supporting the mask 220.
At the time of film formation, the substrate 10 is placed on the mask 220. Therefore, the mask 220 also functions as a carrier for placing the substrate 10. The cooling plate 230 is a plate member that is in close contact with (the surface of) the substrate 10 opposite to the mask 220 at the time of film formation, and suppresses deterioration or degradation of the organic material by suppressing the temperature rise of the substrate 10.
The cooling plate 230 may also double as a magnet plate. The magnet plate is a member (adhesion member) that attracts the mask 220 by magnetic force to improve adhesion between the substrate 10 and the mask 220 during film formation. In this case, the adhesion member for adhering the substrate 10 to the mask 220 serves as a temperature adjusting member for adjusting (typically cooling) the temperature of at least one of the substrate 10 and the mask 220.
The evaporation source 240 includes a container (crucible) for storing a deposition material (film forming material) to be discharged to a substrate, a heater, a shutter, a driving mechanism, an evaporation rate monitor, and the like (none of which are shown). In the present embodiment, the vapor deposition apparatus using the evaporation source 240 as a film forming source is described, but the present invention is not limited to this, and a sputtering apparatus using a sputtering target as a film forming source may be used.
Above (outside) the vacuum chamber 200, a substrate Z actuator 250, a holder Z actuator 251, a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and a θ actuator (not shown) are provided as a position adjustment mechanism 205 for adjusting the relative position between the substrate 10 and the mask 220. These actuators are constituted by, for example, a motor and a ball screw, a motor and a linear guide, and the like. Alternatively, the actuators included in the position adjustment mechanism 205 and the control unit 270 that controls them may be considered together as the position adjustment mechanism.
The substrate Z actuator 250 is a driving member for raising and lowering (Z-direction movement) the entire substrate support unit 210. The holder Z actuator 251 is a driving member for opening and closing a holding mechanism (described later) of the substrate supporting unit 210.
The cooling plate Z actuator 252 is a driving member for lifting and lowering the cooling plate 230. The X actuator, the Y actuator, and the θ actuator (hereinafter, collectively referred to as "XY θ actuator") are driving means for performing alignment of the substrate 10. The xyθ actuator moves the substrate support unit 210 and the entire cooling plate 230 in the X direction, the Y direction, and the θ rotation. In the present embodiment, a configuration in which a θ actuator that performs θ rotation is separately provided is adopted, but θ rotation may be performed by a combination of an X actuator and a Y actuator. In the present embodiment, the structure of X, Y and θ of the substrate 10 is adjusted while the mask 220 is fixed, but the alignment of the substrate 10 and the mask 220 may be performed by adjusting the position of the mask 220 or adjusting the positions of both the substrate 10 and the mask 220.
Above (outside) the vacuum chamber 200, cameras 260 and 261 for measuring the positions of the substrate 10 and the mask 220 are provided for aligning the substrate 10 and the mask 220. The cameras 260 and 261 capture images of the substrate 10 and the mask 220 through windows provided in the vacuum chamber 200. By identifying the alignment marks on the substrate 10 and the mask 220 from the image, the relative deviations in the XY position and XY plane of each can be measured.
In order to realize high-precision alignment in a short time, it is preferable to perform 2 stages of alignment, i.e., a first alignment (also referred to as "rough alignment") in which alignment is performed substantially and a second alignment (also referred to as "fine alignment") in which alignment is performed with high precision. In this case, two cameras, that is, a camera 260 for first alignment with a low resolution but a wide field of view and a camera 261 for second alignment with a narrow field of view but a high resolution may be used. In the present embodiment, alignment marks attached to two portions of a pair of opposing sides of each of the substrate 10 and the mask 220 are measured by two first alignment cameras 260, and alignment marks attached to four corners (or two diagonal portions) of each of the substrate 10 and the mask 220 are measured by four (or two) second alignment cameras 261. The number of alignment marks and the number of cameras for measuring the same are not particularly limited, and, for example, in the case of precise alignment, marks attached to two corners of the substrate 10 and the mask 220 may be measured by two cameras 261. The cameras 260 and 261 function as position information acquisition means for acquiring position information of the substrate 10 or relative position information of the substrate 10 and the mask 220. Alternatively, the cameras 260 and 261 and the control unit 270 for calculating the positional information based on the image information acquired by the cameras may be considered as the positional information acquiring means.
The film forming apparatus includes a control unit 270. The control unit 270 has functions of, in addition to the substrate Z actuator 250, the holder Z actuator 251, the cooling plate Z actuator 252, the xyθ actuator, and the cameras 260 and 261, conveying and aligning the substrate 10, controlling the evaporation source, controlling the film formation, and the like. The control unit 270 may be configured by a computer having a processor, a memory, a storage, an I/O, and the like, for example. In this case, the function of the control section 270 is realized by executing a program stored in a memory or a storage by a processor. As the computer, a general-purpose personal computer may be used, or an embedded computer or PLC (programmable logic controller: programmable logic controller) may be used. Alternatively, part or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. The control unit 270 may be provided for each film forming apparatus, or one control unit 270 may control a plurality of film forming apparatuses.
The film forming apparatus of the present invention includes an offset information storage unit 280. The offset information storage unit 280 stores information for adjusting the parameter value (offset value) for position adjustment at the time of conveyance or alignment of the substrate 10, depending on the portion of the mother glass from which the substrate 10 separated from the large substrate (mother glass) is separated. The offset information storage unit 280 may be provided for each film forming apparatus, or may be connected to a plurality of film forming apparatuses via a network. Details of the offset information storage unit 280 are discussed later.
< substrate supporting Unit >
The structure of the substrate supporting unit 210 will be described with reference to fig. 3. Fig. 3 is a perspective view of the substrate supporting unit 210.
The substrate supporting unit 210 is a member for holding and conveying the substrate 10 by sandwiching the peripheral edge of the substrate 10 by a sandwiching mechanism. Specifically, the substrate support unit 210 includes: a support frame 301 provided with a plurality of supports 300 for supporting each of four sides of the substrate 10 from below, and a holding member 303 provided with a plurality of pressing members 302 for sandwiching the substrate 10 between the support frame and each support 300. A pair of support members 300 and pressing members 302 constitute a holding mechanism. In the example of fig. 3, three holders 300 are arranged along the short sides of the substrate 10, and six holding mechanisms (pairs of holders 300 and pressing members 302) are arranged along the long sides, so that two sides of the long sides are held. However, the configuration of the chucking mechanism is not limited to the example of fig. 3, and the number and arrangement of the chucking mechanisms may be appropriately changed according to the size, shape, film formation conditions, and the like of the substrate to be processed. The support 300 is also referred to as a "finger plate", and the pressing member 302 is also referred to as a "clip".
The transfer of the substrate 10 from the transfer robot 140 to the substrate supporting unit 210 is performed, for example, as follows. First, the clamp member 303 is lifted by the clamp Z actuator 251 to separate the pressing tool 302 from the support 300, and the clamp mechanism is brought into a released state. After the substrate 10 is introduced between the support 300 and the pressing tool 302 by the transfer robot 140, the clamping member 303 is lowered by the clamp Z actuator 251, and the pressing tool 302 is pressed against the support 300 with a predetermined pressing force. Thereby, the substrate 10 is sandwiched between the pressing member 302 and the support 300. In this state, the substrate support unit 210 is driven by the substrate Z actuator 250, so that the substrate 10 can be lifted (moved in the Z direction). Since the holder Z actuator 251 is raised and lowered together with the substrate supporting unit 210, the state of the holding mechanism is not changed even if the substrate supporting unit 210 is raised and lowered.
Reference numeral 101 in fig. 3 denotes second alignment marks attached to four corners of the substrate 10, and reference numeral 102 denotes first alignment marks attached to the center of the short sides of the substrate 10.
< alignment >
Fig. 4 is a diagram showing a first alignment process. Fig. 4 (a) shows a state immediately after the substrate 10 is transferred from the transfer robot 140 to the substrate supporting unit 210. The substrate 10 is deflected downward at its center due to its own weight. Next, as shown in fig. 4 (b), the holding member 303 is lowered, and each side of the substrate 10 is held by a holding mechanism composed of the pressing tool 302 and the supporting tool 300.
Next, as shown in fig. 4 (c), the first alignment is performed in a state where the substrate 10 is separated from the mask 220 by a predetermined height. The first alignment is a first position adjustment process of adjusting the relative position of the substrate 10 and the mask 220 in the XY plane (in the direction parallel to the surface of the mask 220) substantially, and is also referred to as "coarse alignment". In the first alignment, the substrate alignment mark 102 provided on the substrate 10 and a mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 260, and the XY position and the relative displacement in the XY plane are measured, thereby performing alignment. The camera 260 used for the first alignment is a low resolution but wide field of view camera so that approximate alignment can be performed. In the alignment, the position of the substrate 10 (substrate supporting unit 210) may be adjusted, the position of the mask 220 may be adjusted, or both the positions of the substrate 10 and the mask 220 may be adjusted.
When the first alignment process is completed, as shown in fig. 5 (a), the substrate Z actuator 250 is driven to lower the substrate 10. Next, as shown in fig. 5 (b), before the substrate 10 is brought into contact with the mask 220, the pressing member 302 is lifted up to bring the clamp mechanism into a released state. Next, as shown in fig. 5 (c), the substrate support unit 210 is lowered to a position where the second alignment is performed while maintaining the released state (non-clamped state). Next, as shown in fig. 5 (d), the peripheral edge portion of the substrate 10 is clamped again by the clamping mechanism. The position at which the second alignment is performed is a position at which the substrate 10 is temporarily placed on the mask 220 in order to measure the relative displacement between the substrate 10 and the mask 220, and is, for example, a position at which the support surface (upper surface) of the support 300 is slightly higher than the placement surface of the mask 220. At this time, at least the central portion of the substrate 10 is in contact with the mask 220, and the left and right edge portions of the peripheral portion of the substrate 10 supported by the clamping mechanism are slightly separated (lifted) from the mounting surface of the mask 220.
In the present embodiment, the description has been made of the substrate being lowered in a state where the substrate is released when the substrate is lowered to the measurement position for the second alignment after the first alignment is completed, but the present invention is not limited to this, and the substrate may be lowered in a state where the substrate is held by the substrate holding mechanism.
Fig. 6 (a) to 6 (d) are diagrams illustrating the second alignment. The second alignment is an alignment process for performing alignment with high accuracy, and is also called "fine alignment". First, as shown in fig. 6 a, the substrate alignment mark 101 provided on the substrate 10 and a mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 261, and the XY position and the relative displacement in the XY plane are measured. The camera 261 is a narrow-field but high-resolution camera so that alignment can be performed with high accuracy. When the detected deviation exceeds a threshold value, a positioning process is performed. Hereinafter, a case where the measured deviation exceeds the threshold will be described.
When the measured deviation exceeds the threshold value, as shown in fig. 6 (b), the substrate Z actuator 250 is driven to raise the substrate 10 and separate it from the mask 220. In fig. 6 (c), the XY θ actuator is driven based on the deviation measured by the camera 261, and alignment is performed. In the alignment, the position of the substrate 10 (substrate supporting unit 210) may be adjusted, the position of the mask 220 may be adjusted, or both the positions of the substrate 10 and the mask 220 may be adjusted.
Thereafter, as shown in fig. 6 (d), the substrate 10 is lowered again to the position where the second alignment is performed, and the substrate 10 is placed on the mask 220 again. Next, the alignment marks of the substrate 10 and the mask 220 are photographed by the camera 261, and the deviation is measured. If the measured deviation exceeds the threshold value, the alignment process is repeated.
When the deviation of the alignment marks is within the threshold value, as shown in fig. 7 (a) to 7 (b), the substrate support unit 210 is lowered in a state where the substrate 10 is sandwiched, and the support surface of the substrate support unit 210 is aligned with the height of the mask 220. Thus, the entire substrate 10 is placed on the mask 220.
Through the above steps, when the mounting process of the substrate 10 on the mask 220 is completed, the cooling plate Z actuator 252 is driven to lower and bring the cooling plate 230 into close contact with the substrate 10, as shown in fig. 7 (c). This completes the preparation for the film formation process (vapor deposition process) by the film formation apparatus.
In the present embodiment, as shown in fig. 6 a to 6 d, the example in which the second alignment is repeated in a state in which the substrate 10 is held by the holding mechanism has been described, but as another example, the holding mechanism may be brought into a released state or the holding force of the holding mechanism may be weakened (the holding is released) when the substrate 10 is placed on the mask 220.
In the present embodiment, vapor deposition is performed in a state shown in fig. 7 (c), that is, in a state in which the cooling plate 230 is lowered (or in a case in which a magnet plate is separately provided from the cooling plate 230, then the cooling plate 230 lowers the magnet together), and the substrate 10 placed on the mask 220 is brought into close contact with the mask 220. However, the present invention is not limited thereto, and vapor deposition may be performed after the substrate 10 is brought into close contact with the mask 220, the pressing tool 302 is raised to bring the clamping mechanism into a released state, the substrate Z actuator 250 is driven to further lower the support 300.
< offset correction >
The substrate 10 is fed into the film forming apparatus through the above-described process, and thereafter, is aligned with the mask 220, and finally film formation is performed, but various attempts for correcting a positional adjustment error (deviation) which may occur at the time of such substrate conveyance or alignment may be further performed. That is, an offset amount for canceling the positional adjustment error may be determined, and offset correction for moving at least one of the substrate support unit and the mask support unit may be performed based on the offset amount. In the following, several representative offset correction techniques are described.
1. Offset correction when receiving a substrate
When the substrate 10 is fed into the film forming chamber 110 by the transfer robot 140 having the multi-joint arm 141 and the robot arm 142, there is a possibility that the receiving position of the substrate 10 in the film forming chamber 110 may deviate. Fig. 8 is a diagram illustrating positional deviation at the time of receiving such a substrate 10, and is a plan view from the upper part in the Z direction. As shown in fig. 8 (a), when the substrate 10 is fed into the film forming chamber 110, the substrate may not be accurately placed on the substrate support unit 210 in the film forming chamber 110 due to positional deviation during the feeding. That is, in a state where the center line (indicated by a thin one-dot chain line) of the substrate 10 does not coincide with the center line (indicated by a thick one-dot chain line) of the substrate support unit 210 in the longitudinal direction, the substrate 10 may be placed on either one of the supports 300 disposed on the opposite side peripheral edge portions in a biased manner.
In order to correct the positional deviation at the time of receiving the substrate, the substrate supporting unit 210 may be moved by previously giving a deviation to cancel the deviation by an amount corresponding to the above-mentioned deviation amount before the substrate 10 is fed into the film forming chamber 110 (fig. 8 b).
By such offset correction, the substrate 10 can be always received at a desired position when the substrate is fed into the film forming chamber 110. The "ideal position" herein typically refers to a position where the support 300 disposed on the opposite side peripheral edge portions of the substrate support unit 210 is disposed without deflection. In other words, the center of gravity of the substrate 10 coincides with the center of the support area constituted by the plurality of supports 300 of the substrate support unit.
The offset amount required for offset correction is measured by preliminarily inputting a non-production substrate as a process control management substrate before inputting the production substrate into the film forming apparatus, and then the measured offset value is stored in a storage unit (offset information storage unit 280). Alternatively, after the production substrate is put into the film forming apparatus, the receiving position of the substrate 10 in the film forming chamber 110 is measured after the substrate 10 is received from the transfer robot 140, and when the deviation amount from the ideal receiving position exceeds the threshold value, the value for canceling the deviation amount may be added to the deviation value stored in the storage unit (the deviation information storage unit 280) and stored in the storage unit (the deviation information storage unit 280) again. In this way, by learning and updating the offset value stored in the storage unit (offset information storage unit 280), it is possible to further suppress a decrease in alignment accuracy. The cameras 260 and 261 can be used for such measurement of the offset amount performed in advance.
2. Correction of misalignment that may occur during contact between substrate and mask
After the fine alignment as the second alignment is completed, the entire surface of the substrate 10 is placed on the mask 220. Next, the cooling plate 230, which also serves as a magnet plate, is lowered (or, when a magnet plate is separately provided, the cooling plate 230 is lowered together with the magnet plate) to bring the substrate 10 into close contact with the mask 220, and vapor deposition is performed (see fig. 7 c).
However, the relative position between the substrate 10 and the mask 220 may deviate again due to mechanical and physical actions such as lowering of the cooling plate 230 and the magnet plate performed after the completion of the alignment.
In order to correct such a positional deviation after the completion of the fine alignment, at a time point after the adhesion operation between the substrate and the mask by the lowering of the cooling plate 230 or the like is performed, the alignment marks of the substrate 10 and the mask 220 are captured again by the fine alignment camera 161, and finally, whether the positional deviation is within a threshold value is measured and verified. Further, by reflecting the amount of positional deviation confirmed in the verification as the amount of deviation to the target position at the time of precise alignment, the positional deviation due to the mechanical and physical actions after the completion of the alignment can be corrected in advance.
The offset amount may be stored in a storage unit (offset information storage unit 280) after the non-production substrate for process control and management is previously put into the film forming apparatus and measured. Alternatively, the amount of deviation may be measured during film formation using the production substrate, and the value for canceling the amount of deviation may be added to the offset value stored in the storage unit (offset information storage unit 280) and stored again in the storage unit (offset information storage unit 280). In this way, by learning and updating the offset value stored in the storage unit (offset information storage unit 280), it is possible to further suppress a decrease in alignment accuracy.
< offset information storage section >
As described above, when a large substrate (mother glass) is cut into a plurality of divided substrates and film formation is performed for each divided substrate, there is a possibility that the operation may be different depending on which portion of the mother glass the divided substrate is cut out and conveyed into the film forming apparatus or aligned with the mask.
As a factor of such a difference in the operation of dividing the substrate, the following can be considered. For example, as shown in fig. 9, when the mother glass is cut into two divided substrates, in general, a side of the mother glass substrate is used as a reference side, and cutting is performed at a position separated from the reference side by a predetermined length, for example, a half-cut-size substrate on the left side of the cutting position is referred to as "divided substrate 1", and the right side is referred to as "divided substrate 2". Therefore, there is a case where a difference in size (length of the short side after division) occurs between the dividing substrate 1 and the dividing substrate 2.
In addition, the residual stress on the cut surface may be different between the divided substrate 1 and the divided substrate 2. If the residual stress varies in magnitude, the pattern of the undulation of the substrate may vary.
When the position (direction) of the cut surface is made different between the divided substrates 1 and 2 at the time of feeding the substrates into the film forming apparatus, the influence of the difference in the magnitudes of the residual stresses at the cut portions may become more remarkable (see fig. 9 b).
In addition, although a notch such as an orientation flat (orientation flat) may be formed in the mother glass substrate in the pretreatment step, the orientation flat may be formed only in one side of the mother glass (see fig. 9 a), and a difference in physical properties such as shape and size may be induced between the cut-out divided substrate 1 and the divided substrate 2.
The characteristic difference between the divided substrates 1 and 2 due to such various causes a difference in the degree of deviation caused by the sliding of the substrates on the robot or the substrate supporting unit or the like at the time of substrate conveyance or at the time of alignment of the substrates with the mask. That is, the above-described various parameter values (offset values) for position adjustment, which are set to correct the positional deviation at the time of substrate conveyance or alignment, may be different between the divided substrates 1 and 2.
Therefore, if the split substrate 1 and the split substrate 2 are conveyed and aligned by the same method using the same offset value regardless of such a difference in operation, the accuracy of alignment is lowered, and the film formation quality is also lowered.
In order to prevent the accuracy of alignment from being lowered due to the difference in operation between the divided substrates, as described above, the film forming apparatus of the present invention includes the offset information storage unit 280, and the offset information storage unit 280 records information for adjusting the parameter value (offset value) for position adjustment at the time of conveyance or alignment of the divided substrates 10 according to which portion of the mother glass the divided substrates 10 are cut out from.
Fig. 10 shows a configuration in which offset value information unique to each divided substrate is recorded as a table in the offset information storage unit 280. As shown in the figure, information (cut information) indicating from which portion of the mother glass is cut is given as an identifier (number, sign) to each divided substrate (substrate 10). Correction values for correcting the positional deviation at the time of substrate conveyance or alignment are calculated for each substrate 10, and stored as corresponding information obtained corresponding to cut-out information given as an identifier for each substrate. As the type of offset correction, there are offset correction (type 1_offset) at the time of receiving the substrate, offset correction (type 2_offset) at the time of the adhesion process between the substrate and the mask, and the like, as described above.
As described above, the offset value of the parameter value for position adjustment used for each type of offset correction is calculated for each divided substrate based on the cut-out information, and stored in the offset information storage unit 280, before the production substrate is put into the film forming apparatus, the non-production substrate for process control and management is put into the film forming apparatus in advance. Alternatively, the amount of deviation may be measured during film formation using the production substrate, and the value for canceling the amount of deviation may be added to the offset value stored in the storage unit (offset information storage unit 280) and stored again in the storage unit (offset information storage unit 280). That is, the control unit may update the offset value stored in the storage unit (offset information storage unit 280) based on the control result of the position adjustment mechanism. In this way, by learning and updating the offset value stored in the storage unit (offset information storage unit 280), it is possible to further suppress a decrease in alignment accuracy.
In the embodiment of the present invention, the position adjustment parameter values (offset values) for each type of offset correction are associated with the cut-out information as the identifier of each substrate in the form of a table, but the present invention is not limited thereto, and the position adjustment parameter values may be associated with the cut-out information by other methods. The offset correction value stored in the offset information storage unit 280 may include other parameter values for position adjustment in addition to the two types described above. In addition, various correction parameters other than offset correction may be stored in association with the cut-out information.
The dicing information for each substrate is acquired by a dicing information acquisition unit (not shown) provided in the control unit 270. The cut-out information acquiring unit acquires cut-out information for each substrate by various methods described below.
As the first method, a method of acquiring cut-out information from an upstream device described later by communication is exemplified. In this case, the cut-out information acquiring unit acquires the cut-out information from an upstream device such as a substrate cutting device (not shown) that performs a process of cutting out the divided substrates 10 from the large-sized substrate before feeding the divided substrates into the film formation group 1, a preprocessing device (not shown) that preprocesses each of the divided substrates 10 to be cut out, and a conveying device (not shown) by communication. An upstream apparatus such as a substrate cutting apparatus gives substrate identification information (ID information) to each of the divided substrates 10 after division (dicing), and stores the information in a memory or transmits the information to a subsequent apparatus in association with the dicing information. The substrate identification information is information for identifying each divided substrate 10, and is, for example, a number and a symbol unique to each divided substrate 10, which are given in the order of being sent from the substrate cutting device.
As a second method, a method of detecting a mark, an orientation flat, or the like formed on each divided substrate 10 and obtaining cut-out information based on the detection result is exemplified. In this case, the cut-out information acquiring unit receives, as a detection result, an image recognition result of an image recognition means including an image acquisition means such as a camera, and acquires cut-out information based on the detection result.
As the third method, a method of receiving an input of a user of the apparatus including the film formation group 1 and acquiring cut-out information based on the input result is exemplified. In this case, the cut-out information acquisition unit includes an input means such as a touch panel, a keyboard, and a mouse, and acquires cut-out information based on the input result of the user.
The offset information storage unit 280 may be provided in each film forming apparatus or in a server connected to each film forming apparatus via a network so as to be common to a plurality of film forming apparatuses. The table stored in the offset information storage unit 280 is read by the control unit 270 of the film forming apparatus, and when the control unit 270 feeds the substrates into the film forming apparatus or aligns the substrates with the mask, the control unit 270 controls the driving of the xyθ actuator that adjusts the relative position of the substrate support unit 210 based on the cut-out information so that the offset value unique to each divided substrate is used for the correction.
As described above, according to the present invention, based on the information (cut-out information) indicating which part of the mother glass is cut out and provided as the identifier for each divided substrate 10, the parameter value (offset value) for adjusting the position for correcting the position deviation at the time of conveyance or alignment is set differently and used at the time of offset correction, so that it is possible to prevent the reduction of alignment accuracy due to the difference in operation between the divided substrates.
< method for manufacturing electronic device >
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a structure and a manufacturing method of the organic EL display device are exemplified as examples of the electronic device.
First, the organic EL display device manufactured will be described. Fig. 11 (a) is an overall view of the organic EL display device 60, and fig. 11 (b) shows a cross-sectional structure of one pixel.
As shown in fig. 11 (a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of the organic EL display device 60. Each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes, which will be described in detail later. Here, the pixel means the minimum unit in which a desired color can be displayed in the display area 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B which show light emission different from each other. The pixel 62 is often constituted by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least one color.
Fig. 11 (B) is a schematic partial cross-sectional view at line a-B of fig. 11 (a). The pixel 62 includes an organic EL element including a first electrode (anode) 64, a hole transport layer 65, one of light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. In the present embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively. In addition, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the first electrodes 64. Further, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 11 (b), the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer according to the structure of the organic EL display element. In addition, a hole injection layer having a band structure that allows smooth injection of holes from the first electrode 64 into the hole transport layer 65 may be formed between the first electrode 64 and the hole transport layer 65. Similarly, an electron injection layer may be formed between the second electrode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and a first electrode 64 are formed is prepared.
An acrylic resin is formed on the substrate 63 on which the first electrode 64 is formed by spin coating, and the insulating layer 69 is formed by patterning the acrylic resin by photolithography so that an opening is formed at a portion where the first electrode 64 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 patterned with the insulating layer 69 is fed to the first film formation apparatus, the substrate is held by the substrate support unit, and the hole transport layer 65 is formed as a common layer on the first electrode 64 in the display region. The hole transport layer 65 is formed by vacuum deposition. In practice, the hole transport layer 65 is formed to be larger in size than the display region 61, and therefore a high-definition mask is not required.
Next, the substrate 63 formed to the hole transport layer 65 is fed to the second film forming apparatus, and held by the substrate supporting unit. The alignment (first alignment and second alignment) of the substrate and the mask is performed, the substrate is placed on the mask, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where the red light-emitting element is arranged.
In the same manner as the formation of the light-emitting layer 66R, the light-emitting layer 66G that emits green light is formed by the third film formation device, and the light-emitting layer 66B that emits blue light is formed by the fourth film formation device. After the formation of the light-emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a common layer on the light emitting layers 66R, 66G, 66B of three colors.
The substrate formed to the electron transport layer 65 is moved to a sputtering apparatus to form the second electrode 68, and thereafter moved to a plasma CVD apparatus to form the film protective layer 70, and the organic EL display device 60 is completed.
When the substrate 63 patterned with the insulating layer 69 is exposed to an environment including moisture and oxygen from the time when the film formation of the protective layer 70 is completed, the light-emitting layer made of the organic EL material may be degraded by the moisture and oxygen. Therefore, in this example, the transfer of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, and may be modified appropriately within the scope of the technical idea.

Claims (15)

1. An alignment system, comprising:
a substrate supporting unit for supporting a substrate;
a mask supporting unit for supporting a mask;
a position adjustment mechanism for adjusting a relative position of the substrate supported by the substrate support unit and the mask supported by the mask support unit; and
a control unit that controls the position adjustment mechanism,
the substrate is a substrate cut from a large substrate,
the control unit controls the position adjustment mechanism based on cutting information indicating from which position of the large substrate the substrate is cut.
2. The alignment system of claim 1,
the alignment system further includes a storage unit that stores correspondence information obtained by associating the cut-out information with a position adjustment parameter value used for position adjustment by the position adjustment mechanism.
3. The alignment system of claim 2,
the control unit obtains the parameter value for position adjustment corresponding to the substrate based on the correspondence information stored in the storage unit, and controls the position adjustment mechanism.
4. An alignment system as claimed in claim 2 or 3, wherein,
the cut-out information is information given as an identifier to each of the plurality of substrates.
5. The alignment system of claim 4,
the parameter value for position adjustment is a parameter value indicating an offset value by which the substrate supporting unit moves in order to receive the substrate.
6. The alignment system of claim 4,
the alignment system further includes a fitting member for fitting the substrate and the mask whose relative positions are adjusted by the position adjustment mechanism,
the position adjustment parameter value is a parameter value for correcting a deviation in the adhesion operation between the substrate and the mask by the adhesion member.
7. The alignment system of claim 6,
The contact member is a magnet disposed on the opposite side of the mask with the substrate interposed therebetween.
8. The alignment system of claim 6 or 7,
the adhesion member also serves as a cooling member for cooling at least one of the substrate and the mask.
9. An alignment system as claimed in claim 2 or 3, wherein,
the position adjustment parameter value stored in the storage unit is a parameter value calculated for each position of the substrate cut out from the large-sized substrate by measurement using a non-production substrate in advance.
10. An alignment system as claimed in claim 2 or 3, wherein,
the control unit updates the parameter value for position adjustment stored in the storage unit based on a control result of the position adjustment mechanism.
11. The alignment system of claim 10,
the alignment system further has a positional information acquisition means for acquiring positional information of the substrate,
the control unit acquires the positional information of the substrate by the positional information acquisition means after controlling the positional adjustment mechanism based on the cut-out information, and updates the positional adjustment parameter value of the corresponding information stored in the storage unit based on the acquired positional information of the substrate.
12. An alignment system, the alignment system comprising:
a substrate supporting unit that supports any one of a plurality of substrates obtained by dividing a large substrate;
a mask supporting unit that supports a mask;
a measuring unit that measures a positional shift amount of the substrate and the mask; and
a position adjusting mechanism that adjusts a relative position of the substrate and the mask,
when the positional deviation is within an allowable range, the substrate and the mask are superimposed on each other,
it is characterized in that the method comprises the steps of,
the alignment system is provided with:
an acquisition unit that acquires substrate information on a portion of the substrate supported by the substrate support unit, the portion being in the large-sized substrate before division; and
and a control unit that controls the measuring unit and the position adjustment mechanism based on the substrate information acquired by the acquisition unit.
13. A film forming apparatus for forming a film of a film forming material onto a substrate through a mask, comprising:
the alignment system of any of claims 1-12; and
And a film forming source disposed on an opposite side of the substrate with the mask interposed therebetween, the film forming source discharging the film forming material toward the substrate.
14. A film forming method for forming a film of a film forming material on a substrate cut out from a large substrate through a mask, comprising:
a substrate feeding step of feeding the substrate into a chamber in which the mask is disposed;
an alignment step of aligning the fed substrate with the mask; and
a film forming step of forming a film of a film forming material on the substrate through the mask,
in at least one of the substrate feeding step and the alignment step, the position of at least one of the substrate and the mask is adjusted based on the cutting information indicating from which position of the large substrate the substrate is cut.
15. A method for manufacturing an electronic device, characterized in that the film forming method according to claim 14 is used to manufacture the electronic device.
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