WO2013118693A1 - Film électro-conducteur transparent - Google Patents

Film électro-conducteur transparent Download PDF

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Publication number
WO2013118693A1
WO2013118693A1 PCT/JP2013/052535 JP2013052535W WO2013118693A1 WO 2013118693 A1 WO2013118693 A1 WO 2013118693A1 JP 2013052535 W JP2013052535 W JP 2013052535W WO 2013118693 A1 WO2013118693 A1 WO 2013118693A1
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WO
WIPO (PCT)
Prior art keywords
transparent conductive
conductive film
film
transparent
specific resistance
Prior art date
Application number
PCT/JP2013/052535
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English (en)
Japanese (ja)
Inventor
央 多々見
琢哉 住山
大谷　寿幸
Original Assignee
東洋紡株式会社
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Filing date
Publication date
Application filed by 東洋紡株式会社 filed Critical 東洋紡株式会社
Publication of WO2013118693A1 publication Critical patent/WO2013118693A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a transparent conductive film in which a transparent conductive film mainly composed of indium oxide is laminated on a transparent film substrate, and in particular, when the transparent conductive film of the present invention is used for a capacitive touch panel, the transparent conductive film Since the specific resistance of the film is low, it is effective for increasing the touch panel size and touch sensitivity.
  • a transparent conductive film in which a transparent thin film with low resistance is laminated on a transparent plastic substrate is used for applications utilizing the conductivity, for example, a flat panel display such as a liquid crystal display or an electroluminescence (EL) display, As a transparent electrode for touch panels, it is widely used in applications in the electric and electronic fields.
  • a flat panel display such as a liquid crystal display or an electroluminescence (EL) display
  • EL electroluminescence
  • the transparent conductive substrate used for the capacitive touch panel is mainly transparent conductive glass in which tin oxide-added indium oxide (ITO) is laminated on glass.
  • Transparent conductive glass is widely used for capacitive touch panels because of its superiority such as lower specific resistance than transparent conductive film.
  • the transparent conductive glass has a problem that it is heavier, thicker and cracks than the transparent conductive film.
  • the specific resistance of the transparent conductive film is desirably 3.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm or less.
  • Patent Documents 1 to 3 a transparent conductive film having a low specific resistance of 3.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm or less can be produced.
  • the film thickness of the transparent conductive film is greater than 100 nm, there are problems in handling such as curling of the transparent conductive film due to the stress of the transparent conductive film, and the film thickness of the transparent conductive film is less than 100 nm.
  • An object of the present invention is to provide a transparent conductive film having a low specific resistance of a transparent conductive film and a thin film thickness of the transparent conductive film in view of the above-mentioned conventional problems.
  • the transparent conductive film which could solve said subject consists of the following structures. 1.
  • the transparent conductive film contains 8 to 15% by mass of tin oxide in addition to indium oxide.
  • the film thickness is 10 to 100 nm and the transparent conductive film has a substrate temperature of ⁇ 60 to A film is formed by a sputtering method at 50 ° C., and is then heat-treated at a temperature at which the shape of the transparent film substrate can be maintained in a vacuum or in an inert gas and / or a reducing gas.
  • the transparent conductive film contains 8 to 15% by mass of tin oxide in addition to indium oxide.
  • a transparent conductive film having a low specific resistance of a transparent conductive film and a thin film thickness of the transparent conductive film is provided.
  • the transparent conductive film of the present invention is extremely useful for applications such as a capacitive touch panel.
  • the transparent conductive film of the transparent conductive film of the present invention preferably contains 8 to 15% by mass of tin oxide in addition to indium oxide. If the tin oxide is less than 8% by mass, the carrier concentration in the transparent conductive film when the transparent conductive film is heat-treated becomes low and the specific resistance becomes high. Moreover, when there is more tin oxide than 15 mass%, it will become difficult to crystallize the transparent conductive film when the transparent conductive film is heat-treated, and the carrier accompanying the crystallization of the transparent conductive film when the transparent conductive film is heat-treated becomes difficult. This is not desirable because the generation is reduced and the specific resistance is increased. Here, the definition of crystallization of a transparent conductive film is shown.
  • the transparent conductive film layer When the transparent conductive film layer is observed under a transmission electron microscope, the one having a polygonal region is a crystal, and the others are amorphous.
  • the transparent conductive film having a ratio of the amorphous part to the crystalline part of 0.00 to 0.16 is called crystallized.
  • the method of estimating the ratio of the amorphous part to the crystalline part can be calculated from the area ratio of the crystalline part and the amorphous part when observed under a transmission electron microscope. More desirably, the transparent conductive film of the transparent conductive film contains 9 to 14% by mass of tin oxide in addition to indium oxide.
  • the film thickness of the transparent conductive film of the transparent conductive film of the present invention is preferably 10 to 100 nm. If the film thickness of the transparent conductive film is less than 10 nm, it becomes difficult to crystallize the transparent conductive film when the transparent conductive film is heat-treated, and the carrier accompanying the crystallization of the transparent conductive film when the transparent conductive film is heat-treated is difficult. This is not desirable because the generation is reduced and the specific resistance is increased. If the film thickness of the transparent conductive film is greater than 100 nm, it is not preferable for handling such as curling of the transparent conductive film due to the stress of the transparent conductive film. This is not desirable because it is expensive and undesirably reduces the total light transmittance. More preferably, the thickness of the transparent conductive film of the transparent conductive film is 15 to 80 nm.
  • the substrate temperature when forming the transparent conductive film of the transparent conductive film of the present invention is preferably ⁇ 60 to 50 ° C.
  • the substrate generally refers to a transparent film substrate, but before the transparent conductive film is laminated, a curable resin layer, an optical adjustment film, or a film is formed on the transparent film substrate.
  • the transparent film base material alone and the prior laminated body including the transparent film base material are also referred to as a substrate.
  • the substrate temperature is replaced with the temperature of the heating medium of the chiller that controls the substrate temperature.
  • the transparent film substrate contains a large amount of organic components and water.
  • the substrate temperature is higher than 50 ° C.
  • the transparent conductive film when the transparent conductive film is formed, a large amount of organic gas or water is released from the transparent film base material. Because of the formation of a heterogeneous transparent conductive film, it becomes difficult to crystallize the transparent conductive film when the transparent conductive film is heat-treated, and the carrier accompanying the crystallization of the transparent conductive film when the transparent conductive film is heat-treated is difficult. This is not desirable because the generation is reduced and the specific resistance is increased. If the substrate temperature is 50 ° C.
  • the substrate temperature is ⁇ 20 to 0 ° C.
  • the substrate temperature is ⁇ 20 to 0 ° C. The reason is as follows. It is desirable that the melting point of water is 0 ° C. or lower because the outgassing is very small. Also, since many general-purpose chillers have a minimum temperature of -20 ° C or higher, -20 ° C or higher is desirable from the economical viewpoint.
  • a transparent conductive film is formed by a sputtering method. Since sputtering is easy to form a homogeneous and dense film, it is easy to produce a transparent conductive film having a low specific resistance. The sputtering method is desirable because it has an excellent film thickness distribution and is industrially very suitable.
  • the transparent conductive film of the present invention is preferably heat-treated at a temperature at which the transparent film substrate can maintain its shape in a vacuum or in an inert gas and / or a reducing gas.
  • the temperature at which the shape of the transparent film substrate can be maintained is a temperature at which the storage elastic modulus is 10% or more of the storage elastic modulus at 30 ° C. in the measurement of dynamic viscoelasticity of the film, and the transparent film base
  • the temperature at which the shape of the material can be maintained is 190 ° C. or higher.
  • the heat treatment at less than 190 ° C.
  • the temperature at which the storage elastic modulus is 10% is less than 190 ° C. with respect to the storage elastic modulus at 30 ° C., it is not a transparent film substrate suitable for the present invention.
  • the temperature of the transparent film substrate is higher than the temperature at which the shape can be maintained, that is, the temperature at which the storage elastic modulus is less than 10% of the storage elastic modulus at 30 ° C. in the dynamic viscoelasticity measurement of the film. If the heat treatment is performed, the transparent film is deformed, the transparent conductive film is broken, the specific resistance is increased, and the flatness of the transparent film is lost.
  • the temperature at which the transparent film substrate can maintain its shape is a temperature at which the storage elastic modulus is 12% or more of the storage elastic modulus at 30 ° C. in the dynamic viscoelasticity measurement of the film, and
  • the temperature at which the shape of the transparent film substrate can be maintained is 200 ° C. or higher.
  • the heat treatment time is preferably 5 to 120 minutes. If the heat treatment is performed for less than 5 minutes, the generation of carriers accompanying crystallization of the transparent conductive film is reduced and the specific resistance is increased, which is not desirable. It is not preferable to perform the heat treatment longer than 120 minutes because of the cost.
  • heat-treating the transparent conductive film formed by the above method in a vacuum or in an inert gas and / or a reducing gas at a temperature at which the transparent film substrate can maintain its shape is generally performed.
  • the specific resistance is reduced by the fact that tin oxide-added indium oxide is crystallized by heat treatment.
  • tin enters the indium sites of indium oxide, and as a result, carriers are generated, resulting in a decrease in specific resistance.
  • the specific resistance is increased because oxygen contained in the atmosphere fills oxygen vacancies in the tin oxide-added indium oxide by heat treatment, and as a result, carriers disappear and the specific resistance increases.
  • tin oxide-added indium oxide is crystallized by the heat treatment, at which time tin enters the indium sites of indium oxide, Since carriers are generated, the specific resistance decreases.
  • the oxidizing gas such as oxygen is not contained in the vacuum or the inert gas, the oxygen deficiency in the tin oxide-added indium oxide is not filled by the heat treatment. Resistance does not increase. Therefore, heat treatment in vacuum or in an inert gas is desirable because the specific resistance is lower than heat treatment in the atmosphere, which is an oxidizing gas.
  • the vacuum used in the present invention is desirably 100 Pa or less.
  • the heat treatment is performed at a value higher than 100 Pa, a large amount of residual oxygen is present, so that oxygen vacancies in the tin oxide-added indium oxide are filled. As a result, carriers disappear and specific resistance increases, which is not desirable. More desirably, it is 1 Pa or less. Further, as the inert gas, argon, nitrogen, neon, helium and the like are desirable, but the inert gas is not limited to these.
  • the heat treatment in the reducing gas is desirable because the specific resistance is lower than the heat treatment in the atmosphere that is the oxidizing gas.
  • the reducing gas hydrogen, carbon monoxide, sulfur dioxide, hydrogen sulfide, formaldehyde and the like are preferable, but the reducing gas is not limited thereto.
  • the specific resistance of the transparent conductive film is 0.8 ⁇ 10 ⁇ 4 to 3.0 ⁇ 1. It is preferably 0 ⁇ 4 ⁇ ⁇ cm.
  • the specific resistance of the transparent conductive film is preferably as low as possible, but it is technically difficult to make the specific resistance lower than 0.8 ⁇ 10 ⁇ 4 ⁇ ⁇ cm in the transparent conductive film on the transparent film substrate.
  • the specific resistance of the transparent conductive film is 3.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm If it is larger, it is not preferable for replacement of transparent conductive glass. More preferably, the specific resistance of the transparent conductive film is 1.1 ⁇ 10 ⁇ 4 to 2.8 ⁇ 10 ⁇ 4 ⁇ ⁇ cm.
  • the transparent conductive film In order to produce a transparent conductive film in which the specific resistance of the transparent conductive film is low and the transparent conductive film is thin, it is desirable that the transparent conductive film is chemically very stable.
  • the first type is a transparent conductive film with many amorphous materials.
  • a transparent conductive film with a large amount of amorphous material has a high specific resistance due to a small amount of crystals and a small amount of carriers.
  • the second type is a transparent conductive film with many chemically unstable crystals.
  • a transparent conductive film having many chemically unstable crystals is easily oxidized and thus has a small amount of carriers and a high specific resistance.
  • the transparent conductive film of the transparent conductive film having a low specific resistance of the transparent conductive film and a thin transparent conductive film has many chemically very stable crystals.
  • the transparent conductive film is formed by sputtering at a substrate temperature of ⁇ 60 to 50 ° C., and then in a vacuum or an inert gas and It is preferable that the transparent film substrate is heat-treated in a reducing gas at a temperature at which the shape can be maintained.
  • the stability of the transparent conductive film was quantified.
  • the definition of the stability index of the transparent conductive film is as follows.
  • the surface resistance of the transparent conductive film becomes a value close to the surface resistance before being poured into 6 mol / liter hydrochloric acid because it does not readily dissolve even when immersed in the film.
  • the stability index of the transparent conductive film is 1.00 to 1.30, more preferably 1.00 to 1.20.
  • the stability index of the transparent conductive film is less than 1.00, when the transparent conductive film is immersed in hydrochloric acid, the surface resistance decreases, and the film thickness of the transparent conductive film cannot increase.
  • the stability index of the transparent conductive film is greater than 1.30, it is a chemically unstable transparent conductive film, which is undesirable because the specific resistance of the transparent conductive film is greater than 3.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm. .
  • the transparent film substrate used in the present invention is a transparent film substrate having a storage elastic modulus of 10% or higher with respect to the storage elastic modulus at 30 ° C. in the measurement of the dynamic viscoelasticity of the film at 190 ° C. or higher. It is desirable to be.
  • the main component used for the transparent film substrate include polyimide, polyamide, polyamideimide, polyethersulfone, polycarbonate, polyarylate, and the like, but are not limited thereto.
  • the thickness of the transparent film substrate used in the present invention is preferably in the range of 7 to 300 ⁇ m, particularly preferably in the range of 15 to 260 ⁇ m. If the thickness of the transparent film is less than 7 ⁇ m, the transparent film is likely to be deformed during handling. On the other hand, if the thickness of the transparent film exceeds 300 ⁇ m, it is close to the thickness of the glass, which is not preferable for the replacement of the transparent conductive glass.
  • the transparent film substrate used in the present invention is a surface activation of the film, such as corona discharge treatment, glow discharge treatment, flame treatment, ultraviolet irradiation treatment, electron beam irradiation treatment, ozone treatment, etc., as long as the object of the present invention is not impaired.
  • Treatment, application of a curable resin layer, application of an optical adjustment film, film formation, or the like may be performed. A plurality of the above processes may be combined.
  • Thickness (film thickness) of transparent conductive film A film sample piece laminated with a transparent conductive thin film layer was cut into a size of 1 mm ⁇ 10 mm and embedded in an epoxy resin for an electron microscope. This was fixed to a sample holder of an ultramicrotome, and a cross-sectional thin section parallel to the short side of the embedded sample piece was produced. Next, in a portion where the thin film of this section is not significantly damaged, a transmission electron microscope (manufactured by JEOL, JEM-2010) is used to photograph at an acceleration voltage of 200 kV and a bright field at an observation magnification of 10,000 times. The film thickness was determined from the photograph taken.
  • a transparent film base material was cut into two portions of 40 mm in length and 5 mm in width parallel to the film width direction. These were set to a measurement length of 25 mm, a displacement upper limit setting of 25%, and a frequency of 10 Hz, and dynamic viscoelasticity measurement was performed from 30 ° C. at a rate of temperature increase of 5 ° C./min.
  • the storage elastic modulus the average value of the storage elastic modulus obtained from two samples was used.
  • the temperature at which the storage elastic modulus became 10% with respect to the storage elastic modulus at 30 ° C. was set as the upper limit of the temperature at which the shape of the transparent film substrate could be maintained.
  • the dynamic viscoelasticity measurement was performed with a dynamic viscoelasticity measuring device manufactured by IT Measurement Co., Ltd.
  • the transparent conductive film layer When the transparent conductive film layer is observed under a transmission electron microscope, the one having a polygonal region is a crystal, and the others are amorphous.
  • the area ratio between the crystalline part and the amorphous part when observed under a transmission electron microscope is calculated, and the ratio of the amorphous part to the crystalline part is 0.00 to 0.16, the transparent conductive film was crystallized.
  • the stability index of a transparent conductive film is represented by the following formula.
  • (Stability index of transparent conductive film) A ⁇ B
  • Example 1 The conditions for producing the transparent conductive film in the examples are shown in Table 1.
  • the common manufacturing conditions in each example are as follows.
  • the transparent film described in Table 1 was put into a vacuum chamber and evacuated to 2.0 ⁇ 10 ⁇ 4 Pa.
  • oxygen was introduced so that the oxygen partial pressure values in Table 1 were obtained, and then argon was introduced as an inert gas to bring the total pressure to 0.5 Pa.
  • power was applied to an indium oxide sintered target containing tin oxide at a power density of 1 W / cm 2 , and a transparent conductive film was formed on a transparent film by DC magnetron sputtering.
  • the film thickness of the transparent conductive film was controlled by changing the speed at which the film passed over the target.
  • the film on which the transparent conductive film was formed was subjected to a heat treatment for 60 minutes under the conditions shown in Table 1, and then measured for each evaluation item. The measurement results are shown in Table 1.
  • the specific resistance of the transparent conductive film is 0.8 ⁇ 10 ⁇ 4 to 3.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm.
  • the film thickness of the transparent conductive film is 10 to 100 nm, the stability index of the transparent conductive film is 1.00 to 1.30, and the total light transmittance is also a practical level, so it is suitable for use. .
  • Comparative Examples 1 to 8 in the results of Table 1 were not preferable because the performance of specific resistance and the stability index of the transparent conductive film were unsatisfactory. About the reference example 1, the film thickness and the performance of the total light transmittance were unsatisfactory, and it was not preferable.
  • the present invention it is possible to provide a transparent conductive film having a low specific resistance of the transparent conductive film and a thin film thickness of the transparent conductive film. It is extremely effective for improvement.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Position Input By Displaying (AREA)

Abstract

La présente invention concerne un film électro-conducteur transparent dans lequel une membrane électro-conductrice transparente présente une faible résistance spécifique et une faible épaisseur de membrane. Selon l'invention, un film électro-conducteur transparent, dans lequel une membrane électro-conductrice transparente est stratifiée sur au moins une surface d'un substrat de film transparent, présente : une membrane électro-conductrice transparente qui contient, en plus d'oxyde d'indium, de 8 à 15 % en masse d'oxyde d'étain ; la membrane électro-conductrice transparente dont l'épaisseur de membrane est de 10 à 100 nm ; le film électro-conducteur transparent qui est obtenu par formation de la membrane électro-conductrice transparente par pulvérisation cathodique à une température de substrat comprise entre -60 et 50°C, puis l'exécution d'un traitement thermique dans un vide ou dans un gaz inerte et/ou un gaz de réduction à une température à laquelle le substrat de film transparent peut conserver sa forme ; une résistance spécifique de la membrane électro-conductrice transparente qui est comprise entre 0,8 x 10-4 et 3,0 x 10-4 Ω·cm.
PCT/JP2013/052535 2012-02-10 2013-02-05 Film électro-conducteur transparent WO2013118693A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012-026851 2012-02-10
JP2012026851 2012-02-10
JP2012-076606 2012-03-29
JP2012076606 2012-03-29

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WO2013118693A1 true WO2013118693A1 (fr) 2013-08-15

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014098131A1 (fr) * 2012-12-19 2014-06-26 株式会社カネカ Substrat doté d'une électrode transparente et son procédé de production
JP2015127443A (ja) * 2013-12-27 2015-07-09 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、並びに透明導電膜
JP2016536663A (ja) * 2013-09-29 2016-11-24 ティーピーケイ タッチ ソリューションズ（シアメン）インコーポレーテッド タッチパネルの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243740A (ja) * 1993-02-15 1994-09-02 Tonen Chem Corp 透明導電膜の製造方法
JPH1161398A (ja) * 1997-08-12 1999-03-05 Tdk Corp 電極の製造方法および電極
JP2000144379A (ja) * 1998-11-12 2000-05-26 Teijin Ltd 透明導電積層体の製造方法
WO2000051139A1 (fr) * 1999-02-24 2000-08-31 Teijin Limited Stratifie conducteur transparent, son procede de fabrication, et dispositif d'affichage comprenant ce stratifie conducteur transparent
WO2011048996A1 (fr) * 2009-10-19 2011-04-28 東洋紡績株式会社 Film conducteur transparent
WO2011138922A1 (fr) * 2010-05-06 2011-11-10 東洋紡績株式会社 Film conducteur transparent et son procédé de fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243740A (ja) * 1993-02-15 1994-09-02 Tonen Chem Corp 透明導電膜の製造方法
JPH1161398A (ja) * 1997-08-12 1999-03-05 Tdk Corp 電極の製造方法および電極
JP2000144379A (ja) * 1998-11-12 2000-05-26 Teijin Ltd 透明導電積層体の製造方法
WO2000051139A1 (fr) * 1999-02-24 2000-08-31 Teijin Limited Stratifie conducteur transparent, son procede de fabrication, et dispositif d'affichage comprenant ce stratifie conducteur transparent
WO2011048996A1 (fr) * 2009-10-19 2011-04-28 東洋紡績株式会社 Film conducteur transparent
WO2011138922A1 (fr) * 2010-05-06 2011-11-10 東洋紡績株式会社 Film conducteur transparent et son procédé de fabrication

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014098131A1 (fr) * 2012-12-19 2014-06-26 株式会社カネカ Substrat doté d'une électrode transparente et son procédé de production
US9903015B2 (en) 2012-12-19 2018-02-27 Kaneka Corporation Substrate with transparent electrode and method for manufacturing same
US10662521B2 (en) 2012-12-19 2020-05-26 Kaneka Corporation Substrate with transparent electrode and method for manufacturing same
JP2016536663A (ja) * 2013-09-29 2016-11-24 ティーピーケイ タッチ ソリューションズ（シアメン）インコーポレーテッド タッチパネルの製造方法
JP2015127443A (ja) * 2013-12-27 2015-07-09 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、並びに透明導電膜

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JPWO2013118693A1 (ja) 2015-05-11

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