WO2013118594A1 - 荷電粒子線装置 - Google Patents
荷電粒子線装置 Download PDFInfo
- Publication number
- WO2013118594A1 WO2013118594A1 PCT/JP2013/051693 JP2013051693W WO2013118594A1 WO 2013118594 A1 WO2013118594 A1 WO 2013118594A1 JP 2013051693 W JP2013051693 W JP 2013051693W WO 2013118594 A1 WO2013118594 A1 WO 2013118594A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrostatic chuck
- ultraviolet light
- irradiated
- charged particle
- particle beam
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
- H01J2237/0047—Neutralising arrangements of objects being observed or treated using electromagnetic radiations, e.g. UV, X-rays, light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2801—Details
Definitions
- the present invention relates to a charged particle beam apparatus that performs line width measurement, defect inspection, and image acquisition of a semiconductor device using an electron beam, and in particular, effectively removes residual charges such as a sample stage disposed in a vacuum chamber.
- the present invention relates to a charged particle beam apparatus that can be used for
- an electron microscope which is one of charged particle beam apparatuses, has been applied to dimension measurement and defect inspection of semiconductor device patterns.
- a length-measuring SEM Critical-Dimension Scanning Electron Microscope, hereinafter referred to as CD-SEM
- CD-SEM Cross-Dimension Scanning Electron Microscope
- a defect inspection SEM is used for defect inspection.
- a scanning electron microscope is used for continuity inspection of a wiring deep hole by utilizing potential contrast.
- Patent Document 1 in order to remove sample charging in an apparatus having a vacuum chamber as in an electron microscope, charging is performed by installing an ultraviolet light source in the vacuum chamber and irradiating with ultraviolet light. A suppressed ion beam processing apparatus is disclosed.
- An apparatus that irradiates a charged particle beam in a vacuum chamber such as an electron microscope or an ion beam apparatus, is provided with a sample stage that holds a sample to be irradiated with the charged particle beam.
- the charged particle beam apparatus irradiates a desired portion with a charged particle beam by appropriately controlling the position of the sample stage.
- sample stages There are various types of sample stages. Among them, there is a sample stage provided with an electrostatic chuck mechanism for holding a sample by using Coulomb force or the like. Since the electrostatic chuck mechanism can hold the entire surface of the wafer with a substantially uniform force, for example, when the sample is a semiconductor wafer, the warp and the like can be flattened and fixed.
- the sample support surface of the electrostatic chuck since the sample support surface of the electrostatic chuck is covered with a highly insulating material such as ceramics, it has a characteristic that charging is likely to occur. Such charging (residual charge) is desirably removed because it may cause, for example, a change in the electron beam focus condition or a residual attracting force when the wafer is detached.
- Patent Document 1 does not disclose the use of ultraviolet light for electrostatic charge removal of an electrostatic chuck, and in some cases by the inventors' study, the electrostatic chuck is attracted instead of being irradiated with ultraviolet light. It became clear that there was.
- a charged particle source an electrostatic chuck mechanism for holding a sample irradiated with the charged particle beam, and a sample chamber for maintaining a space including the electrostatic chuck mechanism in a vacuum state
- a charged particle beam apparatus comprising: an ultraviolet light source for irradiating the sample chamber with ultraviolet light; and an irradiated member to be irradiated with the ultraviolet light, wherein the irradiated member is attached to the electrostatic chuck.
- a charged particle beam device is proposed, which is arranged in a direction perpendicular to the surface.
- the residual gas ionized by the irradiated member can be generated, and the residual gas has a charge eliminating effect. Therefore, without directly irradiating the electrostatic chuck with ultraviolet light, It is possible to perform static elimination.
- the figure which shows an example of the scanning electron microscope provided with the static elimination mechanism which has an ultraviolet light source The figure which shows an example of the scanning electron microscope provided with the static elimination mechanism which irradiates an ultraviolet light directly to an electrostatic chuck from an ultraviolet light source. The figure which shows the static elimination effect when an ultraviolet light is directly irradiated to an electrostatic chuck from an ultraviolet light source. The figure which shows an example of the scanning electron microscope provided with the static elimination mechanism which irradiates an ultraviolet light in the position different from an electrostatic chuck. The figure which shows the charge distribution on an electrostatic chuck when irradiated with ultraviolet light from an ultraviolet light source. The figure which shows the relationship between the repetition frequency when irradiating an ultraviolet light from an ultraviolet light source, and the time required for static elimination.
- the flowchart which shows the measurement process using the electron microscope which does not include a static elimination process The flowchart which shows the measurement process using the electron microscope including a static elimination process.
- the flowchart which shows a static elimination process The figure which shows the positional relationship of the static elimination position provided in the sample chamber, and a shielding member.
- CD-SEM as an example of a charged particle beam apparatus
- the basic principle of CD-SEM measurement will be briefly described. Basically, it is the same as the scanning electron microscope. Primary electrons are emitted from the electron gun and accelerated by applying a voltage. Thereafter, the beam diameter of the electron beam is narrowed down by an electromagnetic lens. This electron beam is scanned two-dimensionally on a sample such as a semiconductor wafer. Secondary electrons generated when the scanned electron beam enters the sample are detected by a detector. Since the intensity of the secondary electrons reflects the shape of the sample surface, the fine pattern on the sample can be imaged by synchronizing the scanning of the electron beam and the detection of the secondary electrons and displaying them on the monitor. In CD-SEM, for example, when measuring the line width of the gate electrode, the edge of the pattern is discriminated based on the change in brightness of the obtained image to derive the dimension. The above is the measurement principle of CD-SEM.
- this CD-SEM is used for measuring the dimensions of a device pattern in a semiconductor production line, not only the performance as an electron microscope, such as resolution and measurement reproducibility, but also the throughput is very important. There are a plurality of factors that determine the throughput, but the effects that are particularly significant are the moving speed of the stage on which the wafer is loaded and the time required for autofocus when acquiring an image.
- an electrostatic chuck for the stage. That is, if the wafer can be stably fixed by the electrostatic chuck, the wafer can be transported at a high acceleration and a high speed without being displaced from the stage. Also, with an electrostatic chuck, the entire surface of the wafer can be warped with an almost even force, and the wafer can be flattened and fixed. The time for determining the value, that is, the autofocus time is shortened.
- the electrostatic chuck As described above, various performance improvement effects can be expected by applying the electrostatic chuck to the electron microscope, but there are also problems due to its characteristics. For example, since the surface that holds the wafer is covered with highly electrically insulating ceramics, the electrostatic chuck is charged by contact and friction between the wafer and the electrostatic chuck, and the residual charge on the electrostatic chuck. Accumulate as. This accumulated residual charge not only causes a focus blur of the acquired image, but also causes a residual adsorption force due to the residual charge, which may cause a reduction in throughput and a conveyance error.
- the first is a method of cleaning the surface of the electrostatic chuck with a cloth dipped in an organic solvent such as alcohol. According to this method, it is possible to remove residual charges through the solvent applied on the electrostatic chuck. However, the vacuum container once provided with the electrostatic chuck must be opened to the atmosphere for cleaning, and a great deal of time is required for the opening of the atmosphere and the next evacuation.
- a second means there is a method in which plasma is generated in a vacuum vessel provided with an electrostatic chuck, and charging is neutralized by dissociation of residual gas.
- FIG. 2 shows an example in which the ultraviolet neutralizing function is applied to a CD-SEM.
- a lens barrel 1 equipped with an electron gun or the like that emits an electron beam is connected to a sample chamber 2.
- the sample chamber 2 includes a preliminary exhaust chamber 3 for exchanging wafers.
- the lens barrel 1 and the sample chamber 2 are always kept at a high vacuum, and the preliminary exhaust chamber 3 is opened to the atmosphere when the sample is exchanged, and kept at a high vacuum during wafer observation.
- An electrostatic chuck 5 is fixed on the XY stage 4 installed in the sample chamber 2, and a wafer (not shown) is held on the electrostatic chuck 5 when observing the wafer. An arbitrary position on the wafer is observed by moving the XY stage 4 operating together.
- an ultraviolet light source 6 for removing residual charges accumulated on the surface of the electrostatic chuck 5 is installed in the sample chamber 2.
- the ultraviolet rays emitted from the ultraviolet light source 6 propagate in the ultraviolet irradiation region 8.
- the residual gas is ionized by the ultraviolet irradiation, and the generated residual gas ions and electrons reach the electrostatic chuck to neutralize the residual charge.
- FIG. 3 shows an example of a result of measuring the time required for static elimination when the residual charge on the electrostatic chuck is removed by ultraviolet irradiation in such a configuration. Residual charges are immediately removed by the irradiation of ultraviolet rays, but a positive charge is formed when the irradiation of ultraviolet rays is continued. This is because light having an energy larger than the work function of the electrostatic chuck material causes a photoelectric effect on the electrostatic chuck, and the electrostatic chuck that has emitted electrons is positively charged.
- This positive charge is alleviated by the combination with the electrons generated by the ultraviolet irradiation, so that it saturates at a certain level, but in the configuration in which the electrostatic chuck is directly irradiated, the residual charge is completely removed. It is not possible.
- FIG. 5 shows an example of the result of measuring the charge distribution on the electrostatic chuck after the static electricity is removed with the configuration described above.
- the area near the ultraviolet light source 6 has been neutralized, but the area away from the ultraviolet light source 6 remains charged.
- Such a local residual charge is not a problem in image observation because the average residual charge on the electrostatic chuck is small if the area is small.
- FIG. 6 shows an example in which measurement of static elimination time is repeatedly performed in such a configuration. As the number of times increases, local residual charges accumulate, so the time constant for static elimination increases. If the ultraviolet irradiation is performed for a long time, the region away from the ultraviolet light source 6 is also neutralized, so the time constant for neutralization returns to the original value. However, such long-time irradiation increases the downtime of the apparatus.
- the residual charge accumulated in the electrostatic chuck is removed in a scanning electron microscope in which the wafer is held by the electrostatic chuck and a device on the wafer is measured, analyzed, or imaged using an electron beam.
- An ultraviolet light source is arranged so that its optical axis is concentric with the central axis of the electrostatic chuck, and a shielding plate is provided so that the ultraviolet light emitted from this ultraviolet light source does not directly reach the electrostatic chuck.
- a configuration in which an opening is provided in the shielding plate will be described so that only residual gas ions and electrons generated by irradiating ultraviolet rays can efficiently reach the electrostatic chuck.
- a sample stage including an electrostatic chuck for holding a sample, an ultraviolet light source, and ultraviolet light from the ultraviolet light source are irradiated in the sample chamber.
- a scanning electron microscope provided with the irradiated member at a position facing the suction surface of the electrostatic chuck will be described.
- a scanning electron microscope provided with a shielding plate that irradiates ultraviolet rays from the side surface of the electrostatic chuck, allows the ultraviolet rays to uniformly pass through the space on the electrostatic chuck, and does not directly irradiate the electrostatic chuck. I will explain.
- FIG. 1 a schematic diagram of a CD-SEM to which the first embodiment is applied is shown in FIG.
- An electrostatic chuck 5 is fixed on the XY stage 4 in the sample chamber 2 maintained at a high vacuum of 10 ⁇ 4 to 10 ⁇ 5 Pa, and a wafer (not shown) is held on the electrostatic chuck 5. Is done.
- the electrostatic chuck includes a so-called Johnson Rabeck type electrostatic chuck whose dielectric film has a specific resistivity of about 1 ⁇ 10 9 ⁇ cm to 10 12 ⁇ cm, and a so-called Coulomb type electrostatic chuck whose specific resistivity is higher than that.
- There are two methods. Each electrostatic chuck system has its characteristics, but this embodiment is effective for any system.
- the Coulomb method is made of Al 2 O 3 suitable for CD-SEM, which is excellent in wafer potential stability and is important for potential stability during measurement. A case where the electrostatic chuck is applied to a CD-SEM will be described.
- an ultraviolet light source 6 is provided so that its optical axis is coaxial with the electrostatic chuck.
- the wavelength of ultraviolet rays emitted from this ultraviolet light source is 400 nm or less.
- a substance is irradiated with light having a wavelength greater than the work function inherent to the substance, it causes a photoelectric effect and emits electrons, but the work function of Al 2 O 3 corresponds to a wavelength of 140 nm.
- light having a wavelength shorter than 140 nm is irradiated onto Al 2 O 3 , a photoelectric effect occurs, and Al 2 O 3 that is an insulating material is positively charged.
- the shielding plate 7 is disposed between the electrostatic chuck 5 and the ultraviolet light source 6 so that only the residual ionized gas efficiently reaches the electrostatic chuck without the ultraviolet rays directly reaching the electrostatic chuck.
- the residual charge can be removed while preventing positive charging due to the photoelectric effect.
- FIG. 7 shows a detailed view of the features of this embodiment.
- the electrostatic chuck 5, the ultraviolet light source 6 and the shielding plate 7 are all arranged on the same axis, and the ultraviolet light source 6 irradiates the region with an opening angle ⁇ (dimension 11 in the figure) with ultraviolet rays.
- a shielding plate 7 is installed in a direction perpendicular to the attracting surface (upper surface) of the electrostatic chuck 5, and the center of the shielded plate 7 irradiated with ultraviolet light is the center of the attracting surface of the electrostatic chuck 5.
- Ultraviolet light irradiation is performed in a state of being arranged coaxially.
- the gas generated in the portion to be irradiated reaches the suction surface while diffusing. Uniformity can be realized.
- the shielding plate 7 is installed at a position separated from the ultraviolet light source 6 by a distance l (dimension 12 in the drawing), and a passage hole 9 is provided at a position not overlapping the ultraviolet irradiation region 8.
- FIG. 8 the figure which looked at the shielding board 7 from the ultraviolet light source 6 side is shown.
- eight circular holes are provided as passage holes on the same radius from the center of the shielding plate 7 (axisymmetrically).
- the ultraviolet irradiation region 8 (irradiated portion) on the shielding plate 7 is in a range equal to or less than the value r (dimension 13 in the drawing) represented by Formula 1 from the center of the shielding plate.
- the passage hole 9 has a distance R (dimension 14 in the figure) from the center of the shielding plate and a diameter D (dimension 15 in the figure) from the center of the shielding plate so that the ultraviolet irradiation region 8 and the passage hole 9 do not overlap with each other. Arrange to keep the relationship.
- the ultraviolet light emitted from the ultraviolet light source 6 is shielded by the shielding plate 7, so that the electrostatic chuck 5 is not directly irradiated, and the residual gas ions generated in the ultraviolet irradiation region 8 are generated. Further, the electrons can pass through the through hole 9 and reach the surface of the electrostatic chuck 5 by diffusion or an electric field generated by the residual charge accumulated on the electrostatic chuck 5 to neutralize the residual charge.
- FIG. 9 shows an example of the result of measuring the time required to neutralize the residual charge accumulated on the electrostatic chuck in the CD-SEM to which this embodiment is applied.
- the neutralization can be completed immediately in the same way as when directly irradiating with ultraviolet rays, and since there is no direct irradiation, there is no occurrence of positive charge due to continued irradiation, and it can be reliably reduced to zero. Yes.
- FIG. 10 shows an example of the result of measuring the charge distribution on the electrostatic chuck after carrying out static elimination when this embodiment is applied. Since the electrostatic chuck and the ultraviolet light source are arranged on the same axis, spatial symmetry is maintained, and there is no non-uniformity of static elimination. Therefore, if this embodiment is applied, the residual charges on the electrostatic chuck can be reliably and uniformly removed in a short time.
- a shielding plate 7a shown in FIG. 11 is used instead of the shielding plate 7 shown in FIG.
- the shielding plate 7a is installed at the same location as the shielding plate 7 shown in FIG.
- the shield plate 7 a is provided with four passage holes 9 a at positions not overlapping the ultraviolet irradiation region 8, leaving the cross-shaped beam 10 and the outer ring 16.
- the inner diameter R ′ of the passage hole 9a (dimension 15 in the drawing) is maintained in the relationship expressed by Equation 3, and the ultraviolet rays emitted from the ultraviolet light source 6 are blocked by the shielding plate 7a.
- the electrostatic chuck is not directly irradiated with ultraviolet rays, but only the ionized residual gas is uniformly reached on the electrostatic chuck, so that the electrostatic chuck and the ultraviolet light source are arranged on the same axis. It is not limited to the case. For example, the same applies to a configuration in which ultraviolet rays are irradiated from the side surface of the electrostatic chuck, and a shielding plate is provided so that the ultraviolet rays uniformly pass through the space on the electrostatic chuck and is not directly irradiated to the electrostatic chuck. Can be expected.
- FIG. 12 is an example of a flowchart showing a measurement process without an electrostatic chuck static elimination process
- FIG. 13 is an example of a flowchart showing a measurement process including an electrostatic chuck static elimination process.
- a wafer is loaded by a transfer mechanism (not shown) (18) and loaded on an electrostatic chuck (19).
- a voltage is applied by an electrostatic chuck power source (20) to electrostatically attract the wafer.
- the XY stage is operated to move to a predetermined coordinate position so that the chip to be measured on the wafer comes to the electron beam irradiation position (21).
- autofocus is performed to adjust the image focus (22)
- the electron beam is scanned to acquire the image (25)
- image processing is performed based on the acquired image
- a target dimension is calculated (26).
- the wafer When the preset recipe is completed (27), the wafer is moved to the initial position together with the electrostatic chuck by the XY stage (28). If the recipe is not completed and measurement of the next chip or image acquisition is performed, the measurement is repeated again by moving to a predetermined coordinate of the next chip (27).
- the electrostatic chuck that has moved to the initial position stops feeding by the DC power source (29) and is carried out of the apparatus (30). When there are multiple wafers to be observed, this series of sequences is repeated sequentially for the multiple wafers. However, the contact and friction between the wafer and the electrostatic chuck are repeated, so that they remain on the surface of the electrostatic chuck. As charges accumulate, the surface potential on the wafer gradually shifts.
- the focus value to be adjusted by autofocus will fluctuate accordingly, but if the amount of fluctuation of the surface potential becomes larger than a certain value, autofocus cannot follow and focus adjustment fails. . If the focus fails, the focus range is changed (24) and autofocus is performed again (23). However, the time required for one measurement increases, and the apparatus throughput is reduced.
- This flow chart shows the charge amount on the electrostatic chuck in advance based on the observation information of the wafer that was loaded before the target wafer before loading the wafer to be observed into the device.
- the value is larger than a certain value
- neutralization by ultraviolet rays is executed before the target wafer is carried in.
- the charge amount of the electrostatic chuck is recorded in a memory (recording medium) or the like in the control device described later, and it is determined whether or not the charge amount is larger than a certain value before the wafer is loaded.
- the certain value used as a criterion for this determination is a value that does not fail autofocus and does not cause deterioration in conveyance accuracy or increase in adhesion of foreign matter, that is, the apparatus can be stably operated without performing static elimination. Set to a value like this.
- the charge amount of the electrostatic chuck is calculated from the focus fluctuation amount at the time of performing autofocus for each measurement location in the wafer surface (33), and the average value is recorded on the recording medium (34).
- This value is updated for each wafer, and it is determined whether or not the wafer to be observed needs to be neutralized before being carried in based on the charge amount measured on the immediately preceding wafer (31).
- static charge can be removed automatically before the residual charge accumulated on the electrostatic chuck becomes a problem in operation of the apparatus.
- a CD-SEM that continues to operate can be provided.
- ultraviolet irradiation is performed before carrying in a new wafer to be measured.
- the potential of the wafer being measured is measured, and ultraviolet irradiation is performed immediately after unloading the wafer. May be.
- the wafer may be damaged, so it goes without saying that a safety circuit is incorporated so as not to irradiate the wafer with ultraviolet rays.
- the residual charge on the electrostatic chuck accumulated during the operation of the apparatus can be removed reliably and uniformly in a short time, and the apparatus operating rate is reduced. It is possible to provide a scanning electron microscope that can continue to exhibit performance stably while minimizing.
- FIG. 14 is a diagram illustrating an example of a scanning electron microscope system including a scanning electron microscope main body 1401 and a control device 1402 for controlling the scanning electron microscope.
- the control device 1402 includes an optical condition adjustment unit 1403 that controls the optical conditions of the scanning electron microscope main body 1401, and image formation and profile waveform formation based on the detected electrons, and measurement and inspection based on the image signal and the like.
- a detection signal calculation unit 1404 is included.
- an ultraviolet light source control unit 1405 that controls an ultraviolet light source that performs static elimination of an electrostatic chuck (not shown), a stage control unit 1406 that performs on / off control of the electrostatic chuck power source, and a control unit
- a memory 1407 for storing control conditions in advance is included.
- the scanning electron microscope system having the above-described configuration executes static elimination of the electrostatic chuck based on the flowchart illustrated in FIG.
- the sample stage 4 on which the electrostatic chuck is mounted is moved to a place where static elimination is performed (step 1503).
- the place where static elimination is performed is, for example, an electrostatic chuck static elimination position 1601 illustrated in FIG.
- FIG. 16 is a view showing the positional relationship between the shielding member 1603 installed in the sample chamber 1602 and the electrostatic chuck charge removal position 1601, and is a top view of the sample chamber 1602.
- an ultraviolet irradiation source 1604 on the shielding member 1603 is irradiated with ultraviolet rays from an ultraviolet light source (not shown) (step 1504) to generate ionized residual gas.
- an ultraviolet light source not shown
- the stage is moved to the wafer receiving position before the vacuum valve in order to return to the normal measurement and inspection process (step 1505).
- the ultraviolet irradiation region 1604 is set to be smaller than the shielding part of the shielding member 1603, the ionized residual gas is selectively allowed to reach the electrostatic chuck while avoiding direct irradiation of ultraviolet rays to the electrostatic chuck. It becomes possible.
- FIG. 17 is a view showing another example in which a shielding material 1701 is provided below the ultraviolet light source 6 (on the electrostatic chuck side (direction toward the gravitational field)).
- the shielding member 1701 has a simple structure as compared with the other examples. According to such a configuration, the ionized residual gas can selectively reach the electrostatic chuck while suppressing direct ultraviolet light irradiation with a relatively simple configuration.
- 7 does not have an outer frame, the shielding plate illustrated in FIG. 7 has a more preferable structure for selectively allowing the residual gas to reach the region where the electrostatic chuck exists.
- FIG. 18 is a diagram showing still another configuration for generating ionized residual gas without directly irradiating the electrostatic chuck with ultraviolet light.
- the ultraviolet light 1801 is irradiated to the ultraviolet light irradiation unit 1802 from the side of the sample chamber.
- the ionized residual gas generated in the ultraviolet light irradiation unit 1802 is supplied from the gas supply port 1803 to the electrostatic chuck located below. Even with such a configuration, the ionized residual gas can selectively reach the electrostatic chuck while suppressing direct ultraviolet light irradiation.
- the ultraviolet light is in a state where the optical axis of the ultraviolet light, the center position of the shielding member, and the center position of the electrostatic chuck are coaxial. It is desirable to perform irradiation.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
2 試料室
3 予備排気室
4 X-Yステージ(試料ステージ)
5 静電チャック
6 紫外線光源
7 遮蔽板
8 紫外線照射領域
Claims (5)
- 荷電粒子源と、当該荷電粒子線が照射される試料を保持する静電チャック機構と、当該静電チャック機構を含む空間を真空状態に維持する試料室を備えた荷電粒子線装置において、
前記試料室内に紫外線を照射するための紫外光源と、当該紫外光が照射される被照射部材とを備え、当該被照射部材は、前記静電チャックの吸着面の垂線方向に配置されることを特徴とする荷電粒子線装置。 - 請求項1において、
前記静電チャックを搭載した試料ステージと、当該試料ステージ、及び紫外光源を制御する制御装置を備え、
当該制御装置は、前記静電チャックが前記被照射部下に位置付けられたときに、前記紫外光源から紫外線を照射するように制御することを特徴とする荷電粒子線装置。 - 請求項1において、
前記被照射部材は、前記紫外線が照射される被照射部と、当該被照射部を中心とした軸対称に複数の開口を備えていることを特徴とする荷電粒子線装置。 - 請求項3において、
前記被照射部は、前記紫外線の照射範囲より大きな被照射面を備えていることを特徴とする荷電粒子線装置。 - 請求項1において、
前記静電チャックに蓄積した電荷を計測する制御装置を備え、当該制御装置は、前記計測結果が所定値を超えたときに、前記紫外光源を用いた除電を実行することを特徴とする荷電粒子線装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/376,901 US9105446B2 (en) | 2012-02-09 | 2013-01-28 | Charged particle beam apparatus |
CN201380008020.7A CN104094376B (zh) | 2012-02-09 | 2013-01-28 | 带电粒子束装置 |
KR1020147021509A KR101624067B1 (ko) | 2012-02-09 | 2013-01-28 | 하전 입자선 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012025676A JP5914020B2 (ja) | 2012-02-09 | 2012-02-09 | 荷電粒子線装置 |
JP2012-025676 | 2012-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013118594A1 true WO2013118594A1 (ja) | 2013-08-15 |
Family
ID=48947360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/051693 WO2013118594A1 (ja) | 2012-02-09 | 2013-01-28 | 荷電粒子線装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9105446B2 (ja) |
JP (1) | JP5914020B2 (ja) |
KR (1) | KR101624067B1 (ja) |
CN (1) | CN104094376B (ja) |
TW (1) | TWI484522B (ja) |
WO (1) | WO2013118594A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230007762A1 (en) * | 2021-07-02 | 2023-01-05 | Taiwan Electron Microscope Instrument Corporation | Detection and charge neutralization device and method thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI593473B (zh) | 2015-10-28 | 2017-08-01 | 漢辰科技股份有限公司 | 清潔靜電吸盤的方法 |
CN109075002B (zh) * | 2016-04-22 | 2020-09-29 | 株式会社日立高新技术 | 带电粒子显微镜以及试样拍摄方法 |
WO2018096610A1 (ja) * | 2016-11-24 | 2018-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP6770428B2 (ja) | 2016-12-28 | 2020-10-14 | 株式会社Screenホールディングス | 除電装置および除電方法 |
WO2018154705A1 (ja) | 2017-02-24 | 2018-08-30 | 株式会社 日立ハイテクノロジーズ | 荷電粒子線装置 |
JP7199279B2 (ja) * | 2019-03-26 | 2023-01-05 | 東京エレクトロン株式会社 | 基板処理装置及び載置台の除電方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04100257A (ja) * | 1990-08-20 | 1992-04-02 | Fujitsu Ltd | 静電吸着機構を備えた処理装置および該静電吸着機構の残留電荷除去方法 |
JPH06188305A (ja) * | 1992-12-17 | 1994-07-08 | Tokyo Electron Ltd | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 |
JPH1027566A (ja) * | 1996-07-10 | 1998-01-27 | Nissin Electric Co Ltd | 基板保持装置 |
JPH11354621A (ja) * | 1998-03-25 | 1999-12-24 | Hitachi Ltd | 光照射による除電方法及びこれを用いた処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02117131A (ja) | 1988-10-26 | 1990-05-01 | Seiko Instr Inc | 集束イオンビーム加工装置 |
US6507029B1 (en) * | 1998-03-25 | 2003-01-14 | Hitachi, Ltd. | Sample processing apparatus and method for removing charge on sample through light irradiation |
US7241993B2 (en) * | 2000-06-27 | 2007-07-10 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
CN1820346B (zh) * | 2003-05-09 | 2011-01-19 | 株式会社荏原制作所 | 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法 |
JP4248382B2 (ja) * | 2003-12-04 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビームによる検査方法および検査装置 |
WO2006049085A1 (ja) * | 2004-11-04 | 2006-05-11 | Ulvac, Inc. | 静電チャック装置 |
JP4828162B2 (ja) * | 2005-05-31 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡応用装置および試料検査方法 |
JP4790324B2 (ja) * | 2005-06-15 | 2011-10-12 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査方法および装置 |
-
2012
- 2012-02-09 JP JP2012025676A patent/JP5914020B2/ja active Active
-
2013
- 2013-01-28 WO PCT/JP2013/051693 patent/WO2013118594A1/ja active Application Filing
- 2013-01-28 KR KR1020147021509A patent/KR101624067B1/ko active IP Right Grant
- 2013-01-28 CN CN201380008020.7A patent/CN104094376B/zh active Active
- 2013-01-28 US US14/376,901 patent/US9105446B2/en active Active
- 2013-01-30 TW TW102103408A patent/TWI484522B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04100257A (ja) * | 1990-08-20 | 1992-04-02 | Fujitsu Ltd | 静電吸着機構を備えた処理装置および該静電吸着機構の残留電荷除去方法 |
JPH06188305A (ja) * | 1992-12-17 | 1994-07-08 | Tokyo Electron Ltd | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 |
JPH1027566A (ja) * | 1996-07-10 | 1998-01-27 | Nissin Electric Co Ltd | 基板保持装置 |
JPH11354621A (ja) * | 1998-03-25 | 1999-12-24 | Hitachi Ltd | 光照射による除電方法及びこれを用いた処理装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230007762A1 (en) * | 2021-07-02 | 2023-01-05 | Taiwan Electron Microscope Instrument Corporation | Detection and charge neutralization device and method thereof |
US12022598B2 (en) * | 2021-07-02 | 2024-06-25 | Taiwan Electron Microscope Instrument Corporation | Detection and charge neutralization device and method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201346968A (zh) | 2013-11-16 |
JP5914020B2 (ja) | 2016-05-11 |
JP2013161769A (ja) | 2013-08-19 |
KR20140119080A (ko) | 2014-10-08 |
CN104094376A (zh) | 2014-10-08 |
US9105446B2 (en) | 2015-08-11 |
KR101624067B1 (ko) | 2016-06-07 |
US20150097123A1 (en) | 2015-04-09 |
CN104094376B (zh) | 2016-04-06 |
TWI484522B (zh) | 2015-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5914020B2 (ja) | 荷電粒子線装置 | |
JP5662992B2 (ja) | 試料表面検査方法及び検査装置 | |
KR102088734B1 (ko) | 검사 장치 | |
TWI417928B (zh) | 電子線裝置、電子線檢查裝置及曝光條件決定方法 | |
JP5185506B2 (ja) | 荷電粒子線パターン測定装置 | |
JP4828162B2 (ja) | 電子顕微鏡応用装置および試料検査方法 | |
US11637512B2 (en) | Object table comprising an electrostatic clamp | |
US9543113B2 (en) | Charged-particle beam device for irradiating a charged particle beam on a sample | |
JP6640975B2 (ja) | 静電チャック機構、及び荷電粒子線装置 | |
JP6411799B2 (ja) | 荷電粒子線装置 | |
JP5058489B2 (ja) | 試料表面検査装置及び検査方法 | |
JP6193608B2 (ja) | 検査装置および検査用画像データの生成方法 | |
JP5228080B2 (ja) | パターン欠陥検査方法および装置 | |
JP6291199B2 (ja) | 検査装置および検査用画像データの生成方法 | |
US12028000B2 (en) | Object table comprising an electrostatic clamp | |
CN115461165A (zh) | 减少基板上污染分子沉积的设备 | |
JP2015023782A (ja) | 荷電粒子線装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201380008020.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13747002 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20147021509 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14376901 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13747002 Country of ref document: EP Kind code of ref document: A1 |