WO2013114666A1 - スパッタリングターゲット組立体 - Google Patents
スパッタリングターゲット組立体 Download PDFInfo
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- WO2013114666A1 WO2013114666A1 PCT/JP2012/074460 JP2012074460W WO2013114666A1 WO 2013114666 A1 WO2013114666 A1 WO 2013114666A1 JP 2012074460 W JP2012074460 W JP 2012074460W WO 2013114666 A1 WO2013114666 A1 WO 2013114666A1
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- Prior art keywords
- target
- sputtering target
- assembly
- pieces
- sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Definitions
- the present invention relates to a cylindrical sputtering target assembly, particularly a FPD sputtering target assembly, for reducing defects due to generation of particles caused by piece bonding portions.
- Thin films such as ITO, ZnO-based, In 2 O 3 —ZnO-based, and MgO-based thin films for forming transparent conductive films are widely used as transparent electrodes in display devices such as liquid crystal displays, touch panels, and EL displays.
- an oxide thin film for forming a transparent conductive film such as ITO is formed by sputtering.
- an in-line type sputtering apparatus has been used for forming a transparent conductive film for a large FPD (flat panel display).
- FPD flat panel display
- target plates having a width of 150 to 300 mm and a length of 1500 mm or more are used.
- Several sheets are arranged and a large glass substrate moves in front of the target to form a film.
- a single target-backing plate assembly is obtained by laminating target pieces that are divided into several lengths on the backing plate. Generally, a plurality of these are arranged in the width direction to increase the size.
- this target-backing plate assembly can be increased in size by arranging in the width direction, but the target piece divided into several in the length direction is between the target pieces of the adjacent target-backing plate assembly.
- the dividing lines will be aligned. There is a gap between the target pieces in this dividing line, and the height of each target piece is slightly different, so there is a step at the dividing line, so nodules are generated during sputtering from this dividing line. It is easy to cause a portion where a large amount of dust called particles are attached on the film to form a streak, resulting in a decrease in yield.
- target pieces of the same dimensions are manufactured and bonded together on a backing plate.
- the target pieces are neatly aligned and look good at first glance, Since all the dividing lines between the two pieces are aligned, nodules are concentrated on the aligned target piece portions. As a result, the adhesion of dust called particles on the film is concentrated on a specific position, resulting in a decrease in yield. .
- problems have been overlooked for a long time without becoming obvious because the focus was on improving the productivity of the target itself and the production volume of large FPDs was still small. As the production amount of FPD increases, such film formation defects frequently occur, and there have been cases where the productivity actually decreases.
- a large rectangular target plate is composed of a target assembly composed of a large number of tiles, and each tile is configured to merge with a gap of three or less tiles, Preventing tile misalignment during thermal cycling is described.
- it may be rectangular, square, hexagonal or fan-shaped.
- This document 1 aims to arrange a large number of tiles closely so that they do not shift, and no measures are taken to prevent generation of nodules during sputtering and particles on the film. 6, FIG. 7, FIG. 8, FIG. 9, and FIG. 10 showing specific examples of the target assembly of this document 1, at least every other tile, and the tile joints are aligned. .
- Such a target assembly results in nodule generation during sputtering and an increase in particles on the film.
- Patent Document 2 describes a disk-shaped divided target, which is composed of a circular divided piece at the center and four fan-shaped divided pieces (having a lack of the central portion) in the periphery. Proposals have been made in which a step is provided at the joint portion of each of the divided pieces for joining. Such a disk-shaped split target is not suitable for manufacturing a target assembly for a large FPD (flat panel display). In addition, every other split target of Document 2 has tile joints aligned. As a result, the target having such a structure has problems that cause nodules during sputtering and increase the number of particles on the film.
- Patent Document 3 describes a disk-shaped divided target, which is composed of a circular divided piece at the center and two fan-shaped divided pieces (having a lack of the central portion) at the periphery. Proposals have been made to cut the joints of the divided pieces and join them obliquely.
- Such a disc-shaped split target is not suitable for manufacturing a target assembly for a large FPD (flat panel display), as in the case of the above-mentioned document 2.
- every other split target of Document 3 has tile joints aligned.
- the target having such a structure has problems that cause nodules during sputtering and increase the number of particles on the film.
- the present applicant is divided into three or more target pieces A such that the dividing line is in the width direction as a rectangular target plate having a width of 100 mm or more and a length of 1000 mm or more.
- a sputtering target assembly in which a split target piece A is laminated on a backing plate in the length direction to form a sputtering target-backing plate assembly B, and three or more of the assemblies B are aligned in the width direction.
- the dividing line between the three target pieces existing in the joined body B is not located at the same position as the dividing line between the adjacent divided target pieces.
- JP 2006-22404 A Japanese Patent Laid-Open No. 5-263234 JP-A-5-17867 WO2011107418
- the present invention provides a large-sized sputtering target-backing plate assembly, particularly an FPD sputtering target assembly, which can reduce defects due to particle generation caused by a target piece bonding portion. It is an object to reduce the structure of the plate assembly and increase the efficiency.
- the present inventors have conducted intensive research.
- the sputtering target is composed of a plurality of cylindrical pieces, which are similarly attached to a columnar or cylindrical backing plate.
- a sputtering target-backing plate assembly can be produced by devising the shape and arrangement of the pieces, and defects caused by particle generation caused by the piece-laminated parts can be reduced.
- the knowledge that it can provide the assembly which becomes, especially the sputtering target assembly for FPD can be provided.
- a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more is divided into three or more target pieces A so that the dividing line is in the circumferential direction.
- a sputtering target assembly in which a sputtering target-backing assembly B is formed by being bonded or placed on a cylindrical backing body, and two or more of the bonding bodies B are aligned in the width direction.
- the dividing line between the three target pieces existing in the bonded body B is not located at the same position as the dividing line between the adjacent divided target pieces.
- a sputtering target assembly is provided.
- the present invention also provides: The sputtering target assembly according to 1) above, wherein the difference in length of each divided target piece A is 20 mm or more in one sputtering target-backing assembly B.
- the present invention also provides: In one sputtering target-backing plate assembly B, there is provided the sputtering target assembly according to 1) above, wherein the difference in length of each divided target piece A is 50 mm or more.
- the present invention also provides: In one sputtering target-backing plate assembly B, there is provided a sputtering target assembly as described in 1) above, wherein the difference in length of each divided target piece A is 100 mm or more.
- the present invention also provides:
- the dividing line between the target pieces of one sputtering target-backing plate assembly B and the dividing line between the target pieces of the adjacent sputtering target-backing plate assembly B are parallel, and the parallel spacing between the adjacent dividing lines is The sputtering target assembly according to any one of 1) to 4) above, which is 20 mm or more.
- the present invention also provides:
- the dividing line between the target pieces of one sputtering target-backing plate assembly B and the dividing line between the target pieces of the adjacent sputtering target-backing plate assembly B are parallel, and the parallel spacing between the adjacent dividing lines is The sputtering target assembly according to any one of 1) to 4) above, wherein the sputtering target assembly is 50 mm or more.
- the present invention also provides:
- the dividing line between the target pieces of one sputtering target-backing plate assembly B and the dividing line between the target pieces of the adjacent sputtering target-backing plate assembly B are parallel, and the parallel interval between the adjacent dividing lines is 100 mm.
- the sputtering target assembly according to any one of 1) to 4) above is provided.
- the present invention provides: Three or more cylindrical target pieces A used for one sputtering target-backing plate assembly B have the same dimensions as three or more rectangular target pieces A of the other sputtering target-backing plate assembly B
- the sputtering target of the present invention adjusted in this way comprises a sputtering target comprising a plurality of cylindrical target pieces, which are attached to or placed on a cylindrical or columnar backing body,
- a sputtering target-backing plate assembly comprising a sputtering target-backing plate assembly can be produced by devising the shape and arrangement to produce a sputtering target-backing plate assembly and reduce defects due to particle generation caused by the target piece bonding portion.
- a sputtering target assembly for FPD can be provided, which has a great advantage that the yield of film formation can be improved and the quality of the product can be improved.
- FIG. 3 is a diagram showing a state of generation of particles when a film is formed using a sputtering target assembly composed of a sputtering target-backing plate assembly of Example 1.
- FIG. 4 is a diagram showing a state of generation of particles when a film is formed using a sputtering target assembly composed of a sputtering target-backing plate assembly of Comparative Example 1. It is a figure which shows the example of the assembly which is the sputtering target assembly which consists of four sputtering target-backing plate assemblies of Example 2, and has the same form every other unit. It is a sputtering target assembly which consists of four sputtering target-backing plate assemblies of Comparative Example 2, and is a view showing an example of an assembly having the same configuration.
- the sputtering target assembly of the present invention divides a cylindrical target with one target having a diameter of 100 mm or more and a length of 1000 mm or more into three or more target pieces A so that the dividing line is in the circumferential direction.
- the split target piece A is laminated or placed on a cylindrical or columnar backing body to form a sputtering target-backing plate assembly B.
- the cylindrical or columnar backing body usually uses high-strength titanium or stainless steel (SUS), but the material is not particularly limited.
- two or more assemblies B are aligned to form a sputtering target assembly.
- the dividing line between the three target pieces existing in the bonded body B is not located at the same position as the dividing line between the adjacent divided target pieces ( It is a sputtering target assembly to be installed (so as not to be aligned), and can also be called a target assembly characterized by an array structure of targets (target pieces).
- two or more assemblies B are aligned and the sputtering target assembly is rotated, and a rectangular substrate for coating is parallel to each other at a certain interval beside the sputtering target assembly ( While maintaining the (interval), the film is sputtered and shifted.
- the substrate is a film, it can be formed on a substrate (film) wound around a roll.
- the rotational speed of the sputtering target assembly and the substrate transfer speed are usually the same, but this speed can be varied. As the deposition proceeds, the sputtering target assembly is worn away. In this case, the rotational speed of the sputtering target assembly can be increased to maintain the same deposition rate.
- a columnar sputtering target assembly is arranged vertically (vertically), and the substrate is also moved vertically to form a film.
- a columnar sputtering target assembly is arranged horizontally, and the substrate is similarly arranged.
- the film can also be moved horizontally. It is also possible to form a film with both sides inclined. The form of this arrangement is arbitrary.
- sputtering target assembly of the present invention is suitable as a sputtering target for FPD, has little generation of particles, can improve the yield, and has a function equivalent to a flat plate-like large sputtering target assembly.
- a major feature of the sputtering target assembly of the present invention is that it can be made compact.
- FIG. 1 shows a target assembly X in which five target pieces having the same length are mounted on a cylindrical backing body, and nine target pieces having the same length in a cylindrical backing body.
- a representative example of a sputtering target assembly in which two target assemblies Y mounted on top are aligned is shown.
- the target-backing plate assembly in which the lengths of the target pieces are changed and the dividing lines between the target pieces when the targets are arranged are combined so that they are displaced, It is possible to improve the yield by dispersing particles resulting from the portion.
- the difference in length of each divided target piece A can be set to 20 mm or more, 50 mm or more, and further 100 mm or more. .
- the sputtering target assembly of the present invention can achieve these. This is because the size of the target piece is changed and combined according to the material of the target.
- the size of the sputtering target assembly is not particularly limited, but the diameter is usually 100 to 200 mm because a cooling mechanism and a magnet for controlling a magnetic field during sputtering are installed inside the target piece.
- the length varies depending on the size of the substrate to be deposited, but a length of about 1000 to 3000 mm is usually used.
- the dividing line between the target pieces of one sputtering target-backing plate assembly B and the dividing line between the target pieces of the adjacent sputtering target-backing plate assembly B are parallel. It is desirable that the parallel interval between the adjacent joining positions be 20 mm or more, 50 mm or more, and further 100 mm or more. This is also because the joining positions of the target pieces are combined as much as possible without being aligned.
- one sputtering target-backing plate assembly can be constituted by three or more cylindrical target pieces A and three or more target pieces A having the same dimensions. From the viewpoint of target productivity, it can be said that the target piece A having the same shape is desirable. This is because the production of the irregularly shaped target piece causes the production cost to increase.
- Each of the target pieces A of the present invention has a cylindrical shape, and has the advantage of not causing complexity and an increase in manufacturing cost as shown in the above-mentioned patent document.
- the target piece A can produce two types of cylindrical target pieces A1 and A2 of different dimensions, and these can be arranged in a cylindrical or columnar backing body, respectively. . Then, every other sputtering target-backing plate assembly X, Y may be arranged.
- the dividing lines between the target pieces do not align due to the positional relationship with the adjacent sputtering target-backing plate assembly.
- the cylindrical target piece A can be produced by arranging three or more types of cylindrical target pieces having different dimensions in which the dividing lines are not aligned. The arrangement form is arbitrary.
- Example 1 As shown in FIG. 1, a cylindrical target having an inner diameter ⁇ 135 ⁇ outer diameter ⁇ 153 and a length of 1364 mm is bonded to a piece having a length of 5 (one target piece is 272 mm) and 9 (length is 151 mm).
- Two types of sputtering target-backing assemblies X and Y were prepared by bonding to a cylindrical backing body (indicated as a backing tube in FIG. 1).
- a film was formed on a film by the Roll to Roll method, and the number of particles was measured by cutting out a range of 1200 ⁇ 3000 mm.
- the film substrate was divided into four equal areas and the number of particles was measured. As a result, as shown on the right side of FIG. 1, it was within the range of 12 to 16 and was sufficiently usable as a product.
- a cylindrical backing body As shown in FIG. 2, a cylindrical backing body (see FIG. 2) is formed by laminating pieces of a cylindrical target having an inner diameter ⁇ 135 ⁇ outer diameter ⁇ 153 and a length of 1364 mm into seven parts (the length of one target piece is 194 mm). 2 are labeled as backing tubes), and two sputtering target-backing assemblies having the same form were produced.
- the dividing line between the target pieces is on the same line.
- the two sputtering target-backing assemblies were set to form a sputtering target assembly.
- a film was formed on a film by the Roll to Roll method, and the number of particles was measured by cutting out a range of 1200 ⁇ 3000 mm.
- the film substrate was divided into four equal areas and the number of particles was measured. As a result, as shown on the right side of FIG. The part where the number of generated particles is small is good, but the part where the number of particles is large is undesirable. It was insufficient as a product.
- Example 2 Example of sputtering target-backing assembly by fitting a target piece obtained by dividing a cylindrical target made of ITO having an inner diameter of 100 to 135 mm, a wall thickness of 5 to 20 mm, and a length of 100 to 500 mm onto a cylindrical backing body Is shown in FIG.
- the circumferential dividing line joint portion
- every other sputtering target-backing assembly having the same structure was obtained.
- the generation of particles was the same as in Example 1.
- Comparative Example 2 Example of sputtering target-backing assembly by fitting a target piece obtained by dividing a cylindrical target made of ITO having an inner diameter of 100 to 135 mm, a wall thickness of 5 to 20 mm, and a length of 100 to 500 mm onto a cylindrical backing body Is shown in FIG.
- a sputtering target-backing joined body was formed so that adjacent target pieces were on the same line in the circumferential dividing line (joint portion).
- the generation of particles was the same as in Comparative Example 1.
- the length of each piece constituting the cylindrical sputtering target is changed, and the dividing line between the target pieces when the target is arranged on each backing body is changed to each target. It is extremely important to disperse particles caused by the dividing line in the circumferential direction of each target piece by combining them so as to be displaced at the same time, and it has a great merit that the yield of products can be improved. If the dividing lines between adjacent target pieces are not on the same line when the targets are arranged, the number of sputtering target-backing joints can be arbitrarily set.
- a bonded body B formed by pasting a plurality of rectangular pieces A on each backing plate to form a joined body B.
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Abstract
Description
この様な大きなターゲットを一枚物のターゲット板として作製することは困難であるため、通常、長さ方向に数分割したターゲットピースをバッキングプレート上で張り合わせて単一のターゲット-バッキングプレート接合体とし、これをさらに複数個、幅方向に整列させて大型化するのが一般的である。
従来は、ターゲット自体の生産性向上に注力していたことと、大型FPDの生産量が未だ少なかったために、このような問題は、顕在化することなく長い間見落とされていたが、近年、大型FPDの生産量が増大するにつれ、このような成膜不良が多く生じるようになり、実際に生産性の低下につながる事例が発生するようになっていた。
この文献1では、多数のタイルを密に配置し、それらが位置ずれしないようにすることが目的であり、スパッタリング中のノジュール発生や膜上のパーティクルを防止するための対策は採られていない。この文献1のターゲット組立体の具体例を示す図6、図7、図8、図9、図10のいずれを見ても、タイルは少なくとも一つ置きに、タイルの接合部が整列している。このようなターゲット組立体は、結果としてスパッタリング中のノジュール発生や膜上のパーティクルを増加させる原因となる。
また、文献2の分割ターゲットは一つ置きに、タイルの接合部が整列している。このような構造を持つターゲットは、結果としてスパッタリング中のノジュール発生や膜上のパーティクルを増加させる原因となる問題を有している。
また、文献3の分割ターゲットは一つ置きに、タイルの接合部が整列している。このような構造を持つターゲットは、結果としてスパッタリング中のノジュール発生や膜上のパーティクルを増加させる原因となる問題を有している。
1)直径100mm以上、長さ1000mm以上である円筒形のターゲットを、分割線が円周方向になるように3個以上のターゲットピースAに分割されており、この分割ターゲットピースAを、円筒状又は円柱状のバッキング体上に貼り合わせるか又は設置してスパッタリングターゲット-バッキング接合体Bを構成し、さらにこの接合体Bを幅方向に2個以上整列させたスパッタリングターゲット組立体であって、各個の接合体Bをスパッタリングターゲット組立体として配列する際に、接合体Bに存在する3個のターゲットピース間の分割線が、隣接する分割ターゲットピース間の分割線と同位置にならないように設置することを特徴とするスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキング接合体Bにおいて、各分割ターゲットピースAの長さの相違が20mm以上であることを特徴とする上記1)記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bにおいて、各分割ターゲットピースAの長さの相違が50mm以上であることを特徴とする上記1)記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bにおいて、各分割ターゲットピースAの長さの相違が100mm以上であることを特徴とする上記1)記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、該隣接する分割線の平行間隔が20mm以上であることを特徴とする上記1)~4)のいずれか一項に記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、該隣接する分割線の平行間隔が50mm以上であることを特徴とする上記1)~4)のいずれか一項に記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、隣接する分割線の平行間隔が100mm以上であることを特徴とする上記1)~4)のいずれか一項に記載のスパッタリングターゲット組立体、を提供する。
一つのスパッタリングターゲット-バッキングプレート接合体Bに使用される3個以上の円筒形ターゲットピースAが、他のスパッタリングターゲット-バッキングプレート接合体Bの3個以上の矩形のターゲットピースAと同一寸法のターゲットピースAからなることを特徴とする上記1)~7)のいずれか一項に記載のスパッタリングターゲット組立体、を提供する。
スパッタリングターゲット組立体の回転速度と基板の移行速度は、通常同じ速度とするが、この速度を変えることもできる。成膜が進行すると、スパッタリングターゲット組立体は摩減して行くが、この場合スパッタリングターゲット組立体の回転速度を速めて、同一の成膜速度を維持することができる。
本発明のスパッタリングターゲット組立体は、これらを達成することができる。これは、ターゲットの材質に応じて、ターゲットピースのサイズを替えて組み合わせるためである。スパッタリングターゲット組立体のサイズには、特に制限はないが、ターゲットピース内側に冷却機構およびスパッタリング中の磁場制御用のマグネットが設置されるという理由から、通常直径は100~200mmである。長さは成膜対象の基板サイズに応じて変化するが、通常1000~3000mm程度のものを使用する。
ターゲットの生産性から見ると、同形状のターゲットピースAであることが望ましいと言える。異形状のターゲットピースの製造は、製造コストを増加させる原因となるからである。本願発明のターゲットピースAは、いずれも円筒形であり、上記特許文献に示すような、煩雑さと製造コストの増加を招くことがないという利点を有する。
後述する実施例に示すように、ターゲットピースAを、異なる寸法の円筒形のターゲットピースA1、A2の2種類を作製し、これらを円筒形又は円柱状のバッキングプ体にそれぞれ配置することができる。そして、このスパッタリングターゲット-バッキングプレート接合体X、Yを一つ置きに配置すれば良い。
また、円筒形のターゲットピースAを、分割線が整列することがない異なる寸法の円筒形のターゲットピースを3種類以上作製して配列することもできる。その配置形態は任意である。
内径φ135×外径φ153、長さ1364mmの円筒ターゲットを5分割(1個のターゲットピースの長さ272mm)と9分割(長さ151mm)の長さのピースの貼り合わせにより、図1に示すように円筒形のバッキング体(図1ではバッキングチューブと表示している。)に接合して、2種のスパッタリングターゲット-バッキング接合体X、Yを作製した。
その結果、図1の右側に示すように、12~16個の範囲に収まり、製品として十分使用可能であった。
内径φ135×外径φ153、長さ1364mmの円筒ターゲットを7分割(1個のターゲットピースの長さ194mm)した長さのピースの貼り合わせにより、図2に示すように円筒形のバッキング体(図2ではバッキングチューブと表示している。)に接合して、同じ形態のスパッタリングターゲット-バッキング接合体を2本作製した。
このスパッタリングターゲット組立体を用いて、Roll to Roll法で、フィルム上に成膜を行い、1200×3000mmの範囲を切り出してパーティクル数を測定した。フィルム基板を、均等な4つの領域に分けてパーティクル数を測定した。
その結果、図2の右側に示すように、7個、10個、18個、24個にばらついた。パーティクルの発生数が少ない部分は良いが、多いところは望ましくない。製品としては不十分であった。
内径φ100~135mm、肉厚5~20mm、長さ100~500mmのITOからなる円筒ターゲットを7分割したターゲットピースを、円筒形のバッキング体の上に嵌め合せてスパッタリングターゲット-バッキング接合体とした例を図3に示す。この場合、隣り合うターゲットピース間では、周方向の分割線(継ぎ目部)が20~50mmの範囲でずらして、スパッタリングターゲット-バッキング接合体とした。しかしながら、一つ置きに、同一構造のスパッタリングターゲット-バッキング接合体とした。この例においても、パーティクルの発生は、実施例1と同様となった。
内径φ100~135mm、肉厚5~20mm、長さ100~500mmのITOからなる円筒ターゲットを7分割したターゲットピースを、円筒形のバッキング体の上に嵌め合せてスパッタリングターゲット-バッキング接合体とした例を図4に示す。この場合、隣り合うターゲットピース間では、周方向の分割線(継ぎ目部)同一線上にあるようにしてスパッタリングターゲット-バッキング接合体とした。この例では、パーティクルの発生は、比較例1と同様となった。
Claims (8)
- 直径100mm以上、長さ1000mm以上である円筒形のターゲットを、分割線が円周方向になるように3個以上のターゲットピースAに分割されており、この分割ターゲットピースAを、円筒状又は円柱状のバッキング体上に貼り合わせるか又は設置してスパッタリングターゲット-バッキング接合体Bを構成し、さらにこの接合体Bを幅方向に2個以上整列させたスパッタリングターゲット組立体であって、各個の接合体Bをスパッタリングターゲット組立体として配列する際に、接合体Bに存在する3個のターゲットピース間の分割線が、隣接する分割ターゲットピース間の分割線と同位置にならないように設置することを特徴とするスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキング接合体Bにおいて、各分割ターゲットピースAの長さの相違が20mm以上であることを特徴とする請求項1記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bにおいて、各分割ターゲットピースAの長さの相違が50mm以上であることを特徴とする請求項1記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bにおいて、各分割ターゲットピースAの長さの相違が100mm以上であることを特徴とする請求項1記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、該隣接する分割線の平行間隔が20mm以上であることを特徴とする請求項1~4のいずれか一項に記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、該隣接する分割線の平行間隔が50mm以上であることを特徴とする請求項1~4のいずれか一項に記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線と、隣接するスパッタリングターゲット-バッキングプレート接合体Bのターゲットピース間の分割線が平行であり、隣接する分割線の平行間隔が100mm以上であることを特徴とする請求項1~4のいずれか一項に記載のスパッタリングターゲット組立体。
- 一つのスパッタリングターゲット-バッキングプレート接合体Bに使用される3個以上の円筒形ターゲットピースAが、他のスパッタリングターゲット-バッキングプレート接合体Bの3個以上の矩形のターゲットピースAと同一寸法のターゲットピースAからなることを特徴とする請求項1~7のいずれか一項に記載のスパッタリングターゲット組立体。
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US14/375,239 US9224584B2 (en) | 2012-01-31 | 2012-09-25 | Sputtering target assembly |
CN201280068719.8A CN104080942B (zh) | 2012-01-31 | 2012-09-25 | 溅射靶组件 |
KR1020147020660A KR20140108312A (ko) | 2012-01-31 | 2012-09-25 | 스퍼터링 타겟 조립체 |
JP2013556194A JP5913382B2 (ja) | 2012-01-31 | 2012-09-25 | スパッタリングターゲット組立体 |
KR1020167030652A KR102097852B1 (ko) | 2012-01-31 | 2012-09-25 | 스퍼터링 타겟 조립체 |
KR1020197016727A KR20190071828A (ko) | 2012-01-31 | 2012-09-25 | 스퍼터링 타겟 조립체 |
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JP2015120975A (ja) * | 2013-11-25 | 2015-07-02 | 株式会社フルヤ金属 | スパッタリングターゲットの製造方法及びスパッタリングターゲット |
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KR102191721B1 (ko) | 2019-05-02 | 2020-12-16 | 주식회사 디엔텍 | 트윈 구동방식의 비드밀 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000328241A (ja) * | 1999-05-21 | 2000-11-28 | Tosoh Corp | 多分割スパッタリングターゲット |
JP2008038250A (ja) * | 2006-08-03 | 2008-02-21 | Samsung Corning Co Ltd | 回転式ターゲットアセンブリ |
JP2008184640A (ja) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | 円筒形スパッタリングターゲット及びその製造方法 |
JP2011521107A (ja) * | 2008-05-14 | 2011-07-21 | アプライド マテリアルズ インコーポレイテッド | マイクロ波を援用した回転可能なpvd |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443318A (en) * | 1983-08-17 | 1984-04-17 | Shatterproof Glass Corporation | Cathodic sputtering apparatus |
JPH0517867A (ja) | 1991-07-12 | 1993-01-26 | Canon Inc | スパツタリング装置のターゲツト |
JPH05263234A (ja) | 1992-03-19 | 1993-10-12 | Oki Electric Ind Co Ltd | ターゲット構造 |
DE10102493B4 (de) * | 2001-01-19 | 2007-07-12 | W.C. Heraeus Gmbh | Rohrförmiges Target und Verfahren zur Herstellung eines solchen Targets |
US20060006064A1 (en) * | 2004-07-09 | 2006-01-12 | Avi Tepman | Target tiles in a staggered array |
US7550066B2 (en) * | 2004-07-09 | 2009-06-23 | Applied Materials, Inc. | Staggered target tiles |
JP2007119824A (ja) * | 2005-10-26 | 2007-05-17 | Kohatsu Kogaku:Kk | 回転円筒型マグネトロンスパッタリングカソード用ターゲット組立体、それを用いたスパッタリングカソード組立体及びスパッタリング装置並びに薄膜作成方法 |
JP5482020B2 (ja) * | 2008-09-25 | 2014-04-23 | 東ソー株式会社 | 円筒形スパッタリングターゲット及びその製造方法 |
KR101631935B1 (ko) * | 2009-08-07 | 2016-06-21 | 삼성디스플레이 주식회사 | 스퍼터링 타겟 장치 |
WO2011071418A1 (ru) | 2009-12-09 | 2011-06-16 | Kudriashov Vladimir Vasilievich | Электросталеплавильный цех |
WO2012108075A1 (ja) | 2011-02-08 | 2012-08-16 | Jx日鉱日石金属株式会社 | スパッタリングターゲット組立体 |
JP2012255194A (ja) * | 2011-06-09 | 2012-12-27 | Panasonic Corp | スパッタリング装置 |
DE202011104768U1 (de) * | 2011-08-24 | 2011-11-22 | Fhr Anlagenbau Gmbh | Befestigung für ein längs geteiltes Rohrtarget |
-
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- 2012-09-25 US US14/375,239 patent/US9224584B2/en active Active
- 2012-09-25 CN CN201280068719.8A patent/CN104080942B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000328241A (ja) * | 1999-05-21 | 2000-11-28 | Tosoh Corp | 多分割スパッタリングターゲット |
JP2008038250A (ja) * | 2006-08-03 | 2008-02-21 | Samsung Corning Co Ltd | 回転式ターゲットアセンブリ |
JP2008184640A (ja) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | 円筒形スパッタリングターゲット及びその製造方法 |
JP2011521107A (ja) * | 2008-05-14 | 2011-07-21 | アプライド マテリアルズ インコーポレイテッド | マイクロ波を援用した回転可能なpvd |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015120975A (ja) * | 2013-11-25 | 2015-07-02 | 株式会社フルヤ金属 | スパッタリングターゲットの製造方法及びスパッタリングターゲット |
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KR20190071828A (ko) | 2019-06-24 |
TW201331400A (zh) | 2013-08-01 |
KR20160130528A (ko) | 2016-11-11 |
US20140367252A1 (en) | 2014-12-18 |
CN104080942B (zh) | 2016-12-28 |
US9224584B2 (en) | 2015-12-29 |
TWI564414B (zh) | 2017-01-01 |
KR102097852B1 (ko) | 2020-04-06 |
CN104080942A (zh) | 2014-10-01 |
KR20140108312A (ko) | 2014-09-05 |
JPWO2013114666A1 (ja) | 2015-05-11 |
JP5913382B2 (ja) | 2016-04-27 |
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