WO2013099719A1 - 基板処理装置及び金属膜のエッチング方法、磁気抵抗効果素子の製造方法 - Google Patents
基板処理装置及び金属膜のエッチング方法、磁気抵抗効果素子の製造方法 Download PDFInfo
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- WO2013099719A1 WO2013099719A1 PCT/JP2012/082868 JP2012082868W WO2013099719A1 WO 2013099719 A1 WO2013099719 A1 WO 2013099719A1 JP 2012082868 W JP2012082868 W JP 2012082868W WO 2013099719 A1 WO2013099719 A1 WO 2013099719A1
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- faraday shield
- dielectric
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- processing apparatus
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Definitions
- the present invention is an etching method for a metal film using the substrate processing apparatus and which, furthermore to a method for producing the magnetoresistance effect element.
- plasma processing apparatus In the manufacture of various electronic parts, substrate processing using plasma is performed.
- plasma processing apparatus a processing apparatus using such plasma (hereinafter referred to as “plasma processing apparatus”), an antenna for power input is provided outside the discharge region of the vacuum vessel, and a high frequency is applied to the inside of the vacuum vessel.
- An apparatus for generating plasma is generally used (see Patent Document 1 and Patent Document 2). Further, since the high-frequency voltage generated in the antenna is electrostatically coupled to the plasma, a so-called self-bias potential is generated on the inner wall of the chamber, and the inner wall of the vacuum vessel is sputtered and scraped.
- a Faraday shield having a floating potential with respect to the ground is installed between two dielectrics provided adjacent to the antenna to prevent the inner wall of the vacuum vessel from being etched.
- a plasma processing apparatus has also been proposed (see Patent Document 3).
- etching material is a dielectric, it does not affect the processing characteristics of the device, but if it is a metal film, the power input from the antenna is not transmitted to the inside of the vacuum vessel, making it difficult to generate and maintain plasma. Problems arise. In order to improve such a problem, a method of removing the metal film attached to the region facing the antenna by actively etching the inside of the dielectric is conceivable. At this time will dielectric internally also etched, the dielectric needs to be periodically replaced.
- a configuration is also conceivable in which sealing is performed between a dielectric in contact with the antenna and a vacuum vessel, and a Faraday shield and a dielectric exposed to plasma are provided in a vacuum.
- the Faraday shield is exposed to an etching gas that has circulated around the dielectric, so that when the etching gas is a reactive gas, the Faraday shield reacts with the etching gas, causing the Faraday shield to deteriorate. Changes in plasma properties can occur.
- the present invention has been made to solve the above-described problems, and provides a substrate processing apparatus capable of easily replacing a dielectric exposed to plasma and stably etching a metal film for a long time. It is an object to provide a possible etching method.
- an antenna is fixed to an outer wall of a dielectric that defines a discharge region, a Faraday shield that has a floating potential with respect to the ground is provided on the inner wall, and the Faraday shield has a plasma resistance.
- One embodiment of the present invention for solving the above-described problems is a vacuum container having a processing space for processing a substrate, a plasma forming space in which plasma is formed, and a part of the vacuum container, A constituent member that is a dielectric material constituting at least a part of the plasma forming space, a conductive member fixed on the constituent member, and the conductive member that is on the plasma forming space side of the constituent member and sandwiches the constituent member.
- a Faraday shield having a floating potential fixed at a position facing the member; a first dielectric member covering the Faraday shield; the component member; the Faraday shield; and the first dielectric member.
- a second dielectric member provided at a position opposite to the first dielectric member, wherein the vacuum vessel has a protrusion, and the second dielectric member And it is provided exchangeably on the protrusion.
- Another embodiment of the present invention is a method for etching a metal film, which includes a vacuum chamber having a processing space in which a substrate is placed and a plasma forming space in which plasma is formed, and part of the vacuum vessel A constituent member that is a dielectric constituting at least a part of the plasma forming space; a conductive member fixed on the constituent member; and the plasma forming space side of the constituent member, the constituent member A Faraday shield having a floating potential fixed at a position facing the conductive member across the substrate, a first dielectric member covering the Faraday shield, the component member, the Faraday shield, and the first dielectric member, A second dielectric member provided at a position facing the antenna across the antenna, wherein the vacuum container has a protrusion, and the second dielectric member is the protrusion.
- a substrate processing apparatus and wherein the etching the metal film formed on the substrate.
- the substrate processing apparatus of the present invention it is possible to easily replace the dielectric exposed to the plasma, and to suppress fluctuations in the substrate processing characteristics due to maintenance. Further, according to the etching method of the present invention, the metal film can be stably etched for a long time.
- FIG. 1 shows a schematic diagram of an ion beam etching apparatus as an example of a plasma processing apparatus using a discharge vessel according to the present invention.
- the ion beam etching apparatus includes a vacuum vessel 100 having a processing space 101 and a plasma formation space 102.
- an antenna constituted by a bell jar (discharge vessel) 104 constituting the plasma forming space, a gas introducing part 105, and a conductive member for generating an induced magnetic field in the bell jar 104.
- a discharge power source 112 that supplies high-frequency power (source power) to the antenna 106
- a matching unit 107 provided between the discharge power source 112 and the antenna 106
- an electromagnetic coil 108 are installed.
- the bell jar 104 constitutes a part of the vacuum vessel 100.
- a grid 109 is installed at the boundary with the processing space 101.
- the high frequency power supplied from the discharge power source 112 is supplied to the antenna 106, and plasma is formed in the plasma forming space 102 inside the bell jar 104.
- the bell jar 104 includes a Faraday shield 118 on its inner wall.
- An exhaust pump 103 is installed in the processing space 101. Further, there is a substrate holder 110 to the processing space 101, the substrate 111 is fixed by a substrate holder 110.
- a voltage is applied to the grid 109 to extract ions in the plasma forming space 102 as a beam.
- the extracted ion beam is electrically neutralized by the neutralizer 113 and irradiated onto the substrate 111.
- FIG. 2 shows an enlarged view of the bell jar 104, which is a characteristic part of the present invention, and its periphery. Note that some components of the apparatus shown in FIG. 1 are omitted.
- the Faraday shield 118 according to the present invention is fixed to the inner wall of the bell jar 104 as shown in FIG.
- Various methods can be adopted for fixing the Faraday shield 118.
- a method of forming a metal film that is the Faraday shield 118 fixed to the inner wall of the bell jar 104 by vacuum deposition or electroless plating of a Faraday shield made of a conductor or spraying a metal such as aluminum can be employed. It is preferred from the viewpoint of productivity of the bell jar 104, in particular to form a Faraday shield 118 by thermal spraying of metals.
- the material of the bell jar 104 used is the material of the insulator, quartz having excellent workability are preferably used.
- a high frequency can be applied to the antenna 106 which is a conductive portion, and a material capable of forming a discharge inside the bell jar 104 is used.
- copper or aluminum is used.
- a conductor is used for the Faraday shield 118, and for example, aluminum, copper, titanium, molybdenum, tantalum, conductive carbon, or the like is used.
- the Faraday shield 118 has a plurality of electrodes extending in a direction perpendicular to the antenna 106 positioned on the outer periphery of the bell jar 104 and along the inner wall of the bell jar 104. In order to make the plurality of electrodes arranged in parallel in the circumferential direction have the same potential, one end or both ends of each electrode are electrically connected to electrodes extending in the circumferential direction.
- the connection position is preferably a position away from the antenna 106 so that power loss due to the induced current does not become a practical problem.
- the Faraday shield 118 is configured to have a floating potential with respect to the ground as a whole.
- the aperture ratio of the plurality of electrodes arranged in parallel in the circumferential direction is too large, the cleaning effect of the inner wall of the bell jar 104 is diminished, and if it is too small, the power utilization efficiency from the antenna 106 decreases, so the aperture ratio is about 50%. Is desirable.
- the thickness of the Faraday shield 118 is preferably thin, but at least it needs to be thicker than the skin depth for the frequency to be used.
- the thickness of the Faraday shield 118 may be about 20 ⁇ m or more.
- the antenna 106 is fixed to the outer wall of the bell jar 104 so as to face the Faraday shield 118 at the outer periphery of the bell jar 104.
- Various methods may be employed for fixing the antenna 106.
- the antenna 106 is formed on the outer wall of the bell jar 104 by spraying or electroless plating, or by fixing the metal plate to the outer wall of the bell jar 104 by bonding the metal plate to the outer wall of the bell jar 104. Or the like.
- a conductive wire may be wound around the antenna and bonded.
- adhesion of a thin metal plate is preferable from the viewpoint of low power loss and ease of power supply.
- the Faraday shield is installed between the antenna and the plasma, has a floating potential with respect to the ground, passes the high-frequency magnetic field radiated from the antenna, and is directly coupled to the plasma.
- This refers to a metallic grid-like electrode that has the effect of uniforming a non-uniform high-frequency electric field radiated from the circumferential direction and coupling it to plasma.
- a high-frequency electric field is generated between the plasma and the inner wall state of the discharge vessel can be controlled by sputtering.
- deposition on the inner wall of the discharge vessel can be suppressed by setting a sputtering action that exceeds the deposition rate of the deposit.
- the distance between the antenna 106 and the Faraday shield 118 can be kept constant within the processing accuracy of the bell jar 104.
- the fixing of the antenna 106 and the Faraday shield 118 means that the antenna 106 and the Faraday shield 118 are integrated with the bell jar 104 by using any of the methods described above.
- the Faraday shield 118 is covered with a shielding member 122a, so that the Faraday shield 118 is not exposed to the etching gas introduced into the plasma forming space 102.
- the shielding member 122a can employ various structures. For example, it may be made of plate-like quartz and may be attached to the inner wall of the bell jar 104 so as to seal the space where the Faraday shield 118 is provided. Further, a dielectric film covering Faraday shield 118 may be formed by vapor deposition. However, in consideration of adhesion to the bell jar 104, the shielding member 122a is preferably formed by thermal spraying.
- alumina Al 2 O 3
- yttria Y 2 O 3
- zirconia ZrO 2
- Yttria is particularly desirable because it is chemically stable.
- a shielding member 122b is further provided at a position facing the antenna 106 with the bell jar 104, the Faraday shield 118, and the shielding member 122a interposed therebetween.
- the shielding member 122b is placed on a protruding portion 126 formed on the chamber wall 100a that constitutes a part of the vacuum vessel 100, and can be easily replaced. Quartz is preferably used as the material of the shielding member 122b.
- the shielding member 122b Since the shielding member 122b is located at a position facing the antenna 106 and is closer to the plasma forming space 102 than the shielding member 122a, the surface is shaved for ion incidence due to self-bias generated in the vicinity of the antenna 106. However, since the shielding member 122b is placed on the protrusion 126, it is sufficient to replace it with another shielding member 122b during maintenance. Since the shielding member 122a covering the Faraday shield 118 is positioned between the antenna 106 and the shielding member 122b, ions accelerated by self-bias are not directly incident. For this reason, the replacement cycle of the shielding member 122a can be made much longer than that of the shielding member 122b.
- the installation method of the shielding member 122b various forms can be adopted in addition to providing the protruding portion 126 on the chamber wall 100a and placing it on the chamber wall 100a.
- the protrusion 126 may be formed on the bell jar 104, or the shielding member 122b may be screwed to a part of the chamber wall 100a.
- a configuration in which the shield member 122b is placed on the protrusion 126 formed on the chamber wall 100a is desirable from the viewpoint of preventing damage and easy replacement.
- the structure of the discharge device having the antenna 106, the bell jar 104, the Faraday shield 118, and the shielding members 122a and 122b according to the present invention is particularly effective when provided in a substrate processing apparatus for etching a metal film.
- Such a metal film made of the material to be etched can be removed by ion incidence due to self-bias generated in the vicinity of the antenna 106.
- the member facing the antenna 106 and provided at the innermost side of the plasma forming space 102 is always etched by ion incidence.
- the shielding member 122b etched by the incidence of ions is only placed on the protrusion 126 and can be easily replaced, so that it is particularly effective in etching a metal film.
- the Faraday shield that is a floating potential, it is possible to improve the uniformity of the plasma at each point (in the present invention, in the circumferential direction of the substrate) in the region facing the antenna 106. Therefore, the metal film adhering to the shielding member 122b can be etched with good uniformity at each point in the region facing the antenna 106, and stable generation and maintenance of plasma for a long time is possible.
- the self-bias potential generated at the position facing the Faraday shield 118 on the surface of the shielding member 122b on the plasma forming space 102 side may reflect the shape of the Faraday shield.
- a region where the deposit cannot be removed may be generated in a stripe shape.
- the thickness of the bell jar 104 is desirably 1 mm or more.
- the proper self-bias potential varies depending on the material of the shielding member 122b, the deposited component, and the like, but is set in the range of several hundred volts to several kilovolts when using a standard apparatus. This value is larger than the threshold value at which the sputtering phenomenon occurs and smaller than the potential generated on the target surface of a general sputtering film forming apparatus.
- the frequency of the high-frequency power assumed in the present invention is 13.56 MHz.
- the self-bias potential generated on the surface of the shielding member 122b is a high-frequency voltage induced in the Faraday shield 118 in actual device operation. It becomes about 1/2 of this.
- the relative permittivity of the bell jar 104 and the shielding members 122a and 122b is the same, and the shielding members 122a and 122b are disposed between the Faraday shield 118 and the plasma without any gap, and the voltage applied to the antenna 106 is 5 kV.
- the electrode potential is 2 kV.
- d1 1.5 ⁇ d2 It becomes. That is, when the discharge vessel thickness is 6 mm, the dielectric shield thickness may be 4 mm. In another example, when the discharge vessel thickness is 6 mm and the self-bias potential is 0.5 kV, the combined thickness of the shielding members 122a and 122b is preferably 1.5 mm.
- the relative permittivity of each member up to the surface of the Faraday shield 118 and the shielding member 122b contacting the plasma is determined.
- ⁇ 2 in Equation 1 can be obtained.
- the relative dielectric constant is set to 1, and the distance from the surface on the plasma forming space 102 side of the shielding member 122a to the surface on the Faraday shield side of the shielding member 122b may be multiplied.
- the self-bias generated on the shielding member 122b is controlled by setting the thickness and relative dielectric constant of each of the shielding members 122a and 122b and the bell jar 104 in accordance with the type of the substance to be etched on the shielding member 122b. It is possible to change the etching characteristics to the shielding member 122b.
- a single loop antenna (hereinafter referred to as “SLA”) in which the antenna is wound once around the outer periphery of the bell jar 104 is preferably used. The reason for this will be described below.
- the inductance L of the loop antenna can be obtained from the following equation.
- L k ⁇ ⁇ 0 ⁇ ⁇ ⁇ a 2 ⁇ n 2 / b (Formula 2) (Where k: Nagaoka coefficient, ⁇ 0 : permeability of vacuum, a: radius of coil, b: length of coil, n: number of turns of coil)
- An inductance is obtained when the antenna 106 of the plasma apparatus shown in the embodiment is a coil wound with a metal wire having a width of 3 mm, for example.
- the interval is set to 1 mm.
- k Nagaoka coefficient
- n 1 to 3
- b 0.003 + n ⁇ 0.001 m
- L 16.6 ⁇ H.
- the impedance of the antenna 106 is about 200 ⁇ , about 680 ⁇ , and about 1400 ⁇ , and the impedance increases as the number of turns increases.
- the maximum value of the high-frequency voltage is large and the maximum value of the high-frequency current is small in proportion to this impedance.
- the antenna 106 is preferably SLA from the viewpoint of the strength of the shielding member 122a and the shielding member 122b and the replacement period.
- the number of turns is slightly smaller than one in order to adjust the plasma density distribution near the end. It is possible to increase the number of the ends and to wind the ends to overlap each other.
- FIG. 3 shows an example of the Faraday shield 118 suitable for the present invention.
- the conductors 118a are arranged in parallel with a gap 118b, and each conductor 118a is held by a connecting portion 118c.
- the connecting portion 118c is also made of a conductor.
- FIG. 4 shows another example of the Faraday shield 118.
- the Faraday shield 118 shown in FIG. 4 includes a conductor 118a, a gap 118b, and a connecting portion 118c.
- the basic apparatus configuration is the same as that of the embodiment shown in FIG. 1, and the shielding member 122b, the protruding portion 126, and the like are omitted.
- FIG. 5 shows another embodiment of the substrate processing apparatus according to the present invention.
- the external wall of the bell jar 104, the recess 120 is formed in the fixed portion of the antenna 106. According to such a configuration, the antenna 106 and the Faraday shield 118 can be set to a desired distance while the bell jar 104 is formed to a predetermined thickness.
- FIG. 6 shows another embodiment of the discharge vessel according to the present invention.
- the external wall of the bell jar 104, the convex portion 121 is formed in the fixed portion of the antenna 106. According to such a configuration, the antenna 106 and the Faraday shield 118 can be set to a desired distance while the bell jar 104 is formed to a predetermined thickness.
- FIG. 7 shows another embodiment of the discharge vessel according to the present invention.
- a recess 127 is formed in the fixed portion of the Faraday shield 118 on the inner wall of the bell jar 104. According to such a configuration, the antenna 106 and the Faraday shield 118 can be set to a desired distance while the bell jar 104 is formed to a predetermined thickness.
- FIG. 8 shows another embodiment of the discharge vessel according to the present invention.
- a convex portion 128 is formed on a fixed portion of the Faraday shield 118 on the inner wall of the bell jar 104. According to such a configuration, the antenna 106 and the Faraday shield 118 can be set to a desired distance while the bell jar 104 is formed to a predetermined thickness.
- FIG. 9 shows another embodiment of the discharge vessel according to the present invention.
- the Faraday shield 118 is formed on the intermediate layer 129.
- the bell jar 104 is heated in a state where plasma is formed in the plasma forming space 102, and the Faraday shield formed on the bell jar 104 is also heated.
- the Faraday shield 118 is formed on the bell jar 104 by vapor deposition or thermal spraying, the metal film that constitutes the Faraday shield 118 and the dielectric that constitutes the bell jar 104 have greatly different thermal expansion coefficients. The adhesion of the shield 118 is lowered, and problems such as film peeling may occur.
- an intermediate layer 129 made of a material having a thermal expansion coefficient larger than that of the material constituting the bell jar 104 and smaller than the material constituting the faraday shield 118 is provided between the bell jar 104 and the Faraday shield 118.
- the intermediate layer 129 By providing the intermediate layer 129, the difference in thermal expansion between the Faraday shield 118 and the member in contact with the Faraday shield 118 is reduced, and the decrease in adhesion is suppressed.
- the intermediate layer 129 exhibits the particularly effective when forming by thermal spraying a Faraday shield 118. Spraying continue to form a film by blowing particles of film to be formed on the substrate with high energy. For this reason, the sprayed film just formed has a high temperature and a large amount of thermal expansion. And the temperature of the sprayed film is lowered over time, the amount of thermal expansion along the membrane also becomes smaller. In this case the amount of shrinkage of the film is large, peeling and the sprayed film, a problem cracking of the substrate occurs.
- the intermediate layer 129 made of a material having a thermal expansion coefficient larger than that of the bell jar 104 and smaller than that of the Faraday shield 118 as in this embodiment, damage to the bell jar 104 can be suppressed in addition to peeling of the film of the Faraday shield 118. it can.
- the discharge vessel is connected to the outside of the vacuum chamber.
- the discharge vessel according to the present invention is not limited to this, for example, the discharge vessel may be mounted within the vacuum chamber.
- an insulating member 125 is provided inside the vacuum chamber, and the plasma forming space 102 and another space (processing space 101 in FIG. 10) are partitioned by the insulating member 125 to discharge the discharge vessel. May be formed.
- the discharge vessel is formed by the insulating member 125 made of quartz, the inner wall of the vacuum chamber, and the grid 109.
- the Faraday shield 118 is fixed to the wall of the insulating member 125 on the plasma forming space 102 side, and the antenna 106 is fixed to the wall on the other space side.
- the substrate processing apparatus may be an RIE apparatus or a PECVD (Plasma Enhanced Chemical Vapor Deposition) apparatus in addition to the IBE apparatus.
- PECVD Plasma Enhanced Chemical Vapor Deposition
- the RIE apparatus in this embodiment includes a vacuum container 200.
- the vacuum apparatus 200 includes a processing space 201 in which plasma is formed and substrate processing is performed.
- the vacuum vessel 200 includes chamber walls 200a and 200b and a dielectric window 204.
- the substrate holder 210 can hold the substrate 211 and includes a power source 231 and a matching unit 230 for applying a predetermined voltage to the substrate 211.
- a gas introduction unit 205 for introducing an etching gas into the processing space 201 and an exhaust unit 203 for exhausting the inside of the vacuum vessel 200 are provided.
- An antenna 206 for supplying power to the processing space 201 is fixed to the dielectric window 204, and the antenna 206 is connected to a matching unit 207 and a power source 212.
- a Faraday shield 218 having a floating potential with respect to the ground is formed on the processing space 201 side of the dielectric window 204, and a shielding member 222a is formed so as to seal the Faraday shield 218.
- a protrusion 226 is provided on the chamber wall 200a, and a shielding member 222b can be placed thereon.
- a self-bias is generated in the vicinity of the antenna 206, and ions in the plasma formed in the processing space 201 are accelerated toward the antenna 206, but the antenna 206 is sandwiched between the dielectric window 204, the Faraday shield 218, and the shielding member 222a. Since the shielding member 222b is located at the opposite position, the ions enter the shielding member 222b. Since the shielding member 222b is placed on the protrusion 226, it can be easily replaced.
- substrate processing is performed using the IBE apparatus shown in FIG.
- FIG. 12 is a schematic diagram of a laminated structure of a perpendicular magnetization type TMR element (hereinafter also referred to as a P-TMR element) 700 as an example of an element that can be processed by the IBE apparatus according to the present invention.
- the P-TMR element includes a RuCoFe layer 702 and a Ta layer 703 as buffer layers, a CoFeB layer 704 as a free layer, an MgO layer 705 as a barrier layer, and a CoFe layer 706 as a first reference layer in order from the lower layer on the substrate 701.
- the CoFeB layer 707 is formed as the second reference layer
- the Ta layer 708 is formed as the orientation separation layer
- the third reference layer 709 is formed as the Ru layer 710 is formed as the nonmagnetic intermediate layer
- the fourth reference layer 711 is formed as the cap layer.
- the barrier layer is preferably MgO in order to obtain a high MR ratio.
- an oxide containing at least one of magnesium (Mg), aluminum (Al), titanium (Ti), zinc (Zn), hafnium (Hf), and germanium (Ge) may be used.
- the third reference layer has a stacked structure of Co and Pd. In this embodiment, Co / Pd is alternately stacked in four layers, and then Co is deposited.
- the fourth reference layer 711 has a Co / Pd stacked structure, and 14 layers of Co and Pd are alternately stacked.
- the P-TMR element is composed of a large number of metal films, metal particles are scattered when etching is performed on the laminated film, and a part thereof is deposited on the shielding member 122b.
- etching proceeds at a rate exceeding the deposition rate of the metal particles on the surface of the shielding member 122b, it is possible to suppress the metal film from being laminated on the shielding member 122b. Further, since the worn shielding member 122b can be easily replaced, productivity can be improved.
- the P-TMR element is processed using the IBE apparatus shown in FIG. 1, but it may be processed using the RIE apparatus shown in FIG. This is because part of the material to be etched is also physically etched in RIE, and scattered metal particles can be deposited on the shielding member 122b.
- the substrate processing apparatus according to the present invention can be applied to processing of other metal films, and the effects of the present invention are exhibited.
- the process of forming the pattern of the P-TMR element shown in the embodiment when the metal film on the element side wall after pattern processing is removed by IBE, or when the surface of the metal film is flattened, etc. It can be applied to metal film processing.
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Abstract
Description
エッチングされた金属が飛散し、そのうちの一部はベルジャ104の内壁や遮蔽部材122bの基板を臨む領域に付着する。アンテナ106と対向する領域に金属膜が付着すると、アンテナ106からプラズマ形成空間102に投入された電力が、金属膜中に電流が流れることによって消費され、プラズマ形成空間102におけるプラズマの生成・維持が困難となる。
Ve=Va×(d2×ε1/(d1×ε2+d2×ε1)) (式1)
となる。従って、仮にベルジャ104と遮蔽部材122a、122bの比誘電率が同一であり、且つファラデーシールド118からプラズマ間に遮蔽部材122aと122bが間隙無く配置されており、アンテナ106に印加される電圧が5kVである場合に、自己バイアス電位を1kVとしたい場合、電極電位は2kVであるため、
d1=1.5×d2
となる。すなわち、放電容器厚みが6mmの場合には誘電体シールド厚みを4mmとすれば良い。他の例では、放電容器厚みが6mmであり、自己バイアス電位を0.5kVとしたい場合、遮蔽部材122aと122bを併せた厚みを1.5mmとすると良い。
L=k×μ0×π×a2×n2/b (式2)
(但し、k:長岡係数、μ0:真空の透磁率、a:コイルの半径、b:コイルの長さ、n:コイルの巻き数)
実施例にあるように、高周波の周波数が13.56MHzであれば、アンテナ106のインピーダンスはそれぞれ、約200Ω、約680Ω、約1400Ωと、巻き数が多いほどインピーダンスが高くなる。
Claims (14)
- 基板の処理を行う処理空間と、プラズマが形成されるプラズマ形成空間とを有する真空容器と、
前記真空容器の一部であって、前記プラズマ形成空間の少なくとも一部を構成する誘電体である構成部材と、
前記構成部材上に固定された導電部材と、
前記構成部材の前記プラズマ形成空間側であり、前記構成部材を挟んで前記導電部材と対向する位置に固定されたフローティング電位であるファラデーシールドと、
前記ファラデーシールドを被覆する第1の誘電部材と、
前記構成部材と前記ファラデーシールドと前記第1の誘電部材とを挟んで前記アンテナと対向する位置に設けられた第2の誘電部材と、を備えた基板処理装置であって、
前記真空容器は突出部を有し、前記第2の誘電部材は前記突出部に交換可能に設けられることを特徴とする基板処理装置。 - 前記第2の誘電部材は、前記突出部上に載置されることを特徴とする請求項1に記載の基板処理装置。
- 前記第1の誘電部材は溶射により形成されたものであることを特徴とする請求項1または2に記載の基板処理装置。
- 前記ファラデーシールドは溶射により形成されたものであることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記ファラデーシールドと前記構成部材の間に、熱膨張係数が前記ファラデーシールドより高く前記構成部材よりも小さい中間層を有することを特徴とする請求項4に記載の基板処理装置。
- 前記中間層は、溶射により形成された誘電体であることを特徴とする請求項5に記載の基板処理装置。
- 前記構成部材及び前記第2の誘電部材は石英から構成されていることを特徴とする請求項1乃至6のいずれか1項に記載の基板処理装置。
- 前記導電部材は蒸着または溶射により前記構成部材上に形成されたものであることを特徴とする請求項1乃至7のいずれか1項に記載の基板処理装置。
- 前記導電部材は金属板を前記構成部材上に接着することで形成されたものであることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理装置。
- 基板が載置される処理空間と、プラズマが形成されるプラズマ形成空間とを有する真空容器と、
前記真空容器の一部であって、前記プラズマ形成空間の少なくとも一部を構成する誘電体である構成部材と、
前記構成部材上に固定された導電部材と、
前記構成部材の前記プラズマ形成空間側であり、前記構成部材を挟んで前記導電部材と対向する位置に固定されたフローティング電位であるファラデーシールドと、
前記ファラデーシールドを被覆する第1の誘電部材と、
前記構成部材と前記ファラデーシールドと前記第1の誘電部材とを挟んで前記アンテナと対向する位置に設けられた第2の誘電部材と、を備え、
前記真空容器は突出部を有し、前記第2の誘電部材は前記突出部に交換可能に設けられている基板処理装置を用いて、基板上に形成された金属膜のエッチングを行うことを特徴とする金属膜のエッチング方法。 - 前記第2の誘電部材の表面上には前記導電部材に供給される電力により自己バイアスが発生しており、前記自己バイアスは、前記第2の誘電部材の表面上に堆積する前記金属膜中の金属の堆積速度よりも前記金属のエッチング速度を大きくせしめる値に設定されることを特徴とする請求項10に記載の金属膜のエッチング方法。
- 前記エッチング方法は、前記プラズマ中のイオンを引き出して形成されるイオンビームを用いてエッチングを行うイオンビームエッチング方法であることを特徴とする請求項9または11に記載の金属膜のエッチング方法。
- 前記エッチング方法は、前記プラズマ中のイオンを、前記基板に印加した電圧によって引き込みエッチングを行う反応性イオンエッチング方法であることを特徴とする請求項9または12に記載の金属膜のエッチング方法。
- 請求項10乃至13のいずれか1項のエッチング方法を用いて製造される磁気抵抗効果素子の製造方法。
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JP2012138411A (ja) * | 2010-12-24 | 2012-07-19 | Canon Anelva Corp | プラズマ処理装置 |
Cited By (2)
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JP2022542271A (ja) * | 2019-07-30 | 2022-09-30 | 江蘇魯▲もん▼儀器有限公司 | 誘導結合プラズマ処理システム |
JP7364288B2 (ja) | 2019-07-30 | 2023-10-18 | 江蘇魯▲もん▼儀器股▲ふん▼有限公司 | 誘導結合プラズマ処理システム |
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WO2013099372A1 (ja) | 2013-07-04 |
JP5807071B2 (ja) | 2015-11-10 |
JPWO2013099719A1 (ja) | 2015-05-07 |
TW201335994A (zh) | 2013-09-01 |
US20140353142A1 (en) | 2014-12-04 |
KR20140046059A (ko) | 2014-04-17 |
TWI512820B (zh) | 2015-12-11 |
US9685299B2 (en) | 2017-06-20 |
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