WO2013098070A1 - Dispositif de séparation et procédé de séparation d'une ébauche métallique ou céramique - Google Patents

Dispositif de séparation et procédé de séparation d'une ébauche métallique ou céramique Download PDF

Info

Publication number
WO2013098070A1
WO2013098070A1 PCT/EP2012/075030 EP2012075030W WO2013098070A1 WO 2013098070 A1 WO2013098070 A1 WO 2013098070A1 EP 2012075030 W EP2012075030 W EP 2012075030W WO 2013098070 A1 WO2013098070 A1 WO 2013098070A1
Authority
WO
WIPO (PCT)
Prior art keywords
blank
wafer
wafer block
cutting
holding
Prior art date
Application number
PCT/EP2012/075030
Other languages
German (de)
English (en)
Inventor
Marco Baumeler
Kai Osswald
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2013098070A1 publication Critical patent/WO2013098070A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Definitions

  • the invention relates to a device and a method for separating a metallic or ceramic blank and a corresponding blank according to the preamble of the independent claims.
  • Disc-shaped elements such as wafer wafers, are needed in large numbers, among others, for semiconductor devices or for photovoltaic solar cells.
  • monocrystalline or multicrystalline wafer wafers are produced from crystalline silicon blocks by means of wire cutting lapping.
  • Document DE102008037653 describes a wire saw apparatus comprising a plurality of cutting wires.
  • the cutting wires thin wafers are cut out of a wafer block.
  • the side surfaces of the wafer block form the later edge surfaces of the cut wafer slices.
  • the wafer block is glued for the cutting process on a glass plate, which in turn on a workpiece carrier of the
  • Wire saw device is glued. When sawing the wafer block in
  • Wafer slices have the cutting wires in the feed direction
  • the disadvantage is that the bonding of the wafer block or the glass plate at the beginning of the cutting process as well as the subsequent detachment of the wafer discs still connected after the bonding after the cutting process is very expensive.
  • the adhesive bond is dissolved, for example, by acetic acid.
  • the pre-cleaning turns out to be due to the contiguous wafer slices equally as very expensive and also very ineffective.
  • the subsequent separation of the wafer slices after a common detachment of all wafer slices is very difficult, especially in view of the adhesion effects acting between the wafer slices. For this reason, a manual separation is required in many cases, which is very costly.
  • the invention is based on the object to simplify the separation of slices of a metallic or ceramic blank, in particular of wafer slices from a wafer block, and to make cheaper economically.
  • the invention is based on removing material from a metallic or ceramic blank by means of a separating device.
  • the separating device comprises a first cutting device for removing material from the blank in a first feed direction.
  • the separating device also has a first cutting device for removing material from the blank in a first feed direction.
  • the separating device also has a first cutting device for removing material from the blank in a first feed direction.
  • Holding device with a holding area In a first method step a), the blank is received in the holding device. Through the holding area the blank is held in the holding device directly or indirectly, in particular for further processing.
  • a further method step b) at least one recess is introduced into the blank by means of the first cutting device.
  • the recess is designed as a introduced from the outside into the blank groove. In particular, it is provided that the groove the
  • the groove in the blank is formed such that it has a groove bottom and two in particular perpendicular to the groove base extending large areas as groove sides within the blank. Furthermore, at least one plate-shaped section is formed in the blank by means of the groove introduced into the blank. The plate-shaped portion preferably has a large area, which comprises the at least one groove side.
  • the inventive method for separating a metallic or ceramic blank, in particular a wafer block in wafer wafers is characterized in that after step b) of the at least one plate-shaped portion formed in the blank in a second
  • Cutting device is separated as a single disc from the blank.
  • a second cutting device possibly simplifies the handling of the blank and increases the precision of the blank by optimizing the blanking process
  • the separation of slices from the blank can be automated. For example, it is possible to receive the separated disc directly after the separation process from the blank by means of a handling device and to carry out subsequent method steps. If, for example, wafer slices are separated from a wafer block, a prewashing of the wafer slices, which is generally necessary, is considerably simplified. In contrast to previously known methods, the prewashing can be carried out with the separated wafer slices. All in all is made possible by the advantages of the method according to the invention primarily focused on high volumes cost-effective production.
  • the first cutting device has at least one cutting wire for removing material from the blank. It has been found that very simple and very economical groove-like recesses can be introduced into a blank by means of a cutting wire. This is especially true when a plurality of mutually parallel, in particular similar recesses are introduced into the blank. The introduction of the recesses is then effected for example by means of at least two cutting wires, which are arranged parallel to each other, wherein a distance of the recesses is provided which corresponds to the thickness of at least one of the blank to be cut disc.
  • the cutting wire on a firmly applied to this cutting means in particular in the form of sharp and hard
  • Particles for example of silicon carbide. It is equally possible to have one
  • the carrier medium for such a cutting agent is, for example, polyethylene glycol.
  • the at least one cutting wire may alternatively be formed as erosion wire.
  • the material removal by means of a cutting wire can be done electrochemically.
  • a combination of these two embodiments is also possible.
  • a wire diameter of the cutting wire is selected, which generates a groove-like recess in the blank with a groove width of 50-200 ⁇ by the material removal in a feed direction.
  • the separation of the at least one plate-shaped portion formed in the blank for example, also by means of a cutting wire.
  • the cutting wire corresponds, for example, to the embodiment as it already is is described above for the first cutting device. It is particularly advantageous to provide an at least approximately force-free separation method. Removal by spark erosion, by electrochemical removal or by laser ablation proves to be particularly favorable. This results in the advantage that no or very little mechanical forces in the
  • the second cutting device has at least one second feed direction compared to the first cutting device, which is preferably oriented perpendicular to the first feed direction.
  • the second feed direction is preferably provided such that the separation of the at least one plate-shaped portion is carried out perpendicular to the introduced groove. The separation takes place by forming a separation line, in particular within a large area of the at least one plate-shaped section. If a plurality of plate-shaped sections are formed in the blank, the separation is preferably carried out starting from a large area of the at least one plate-shaped section. In this way, the singulation of slices occurs sequentially, i. the separation of the plate-shaped sections takes place successively. As a result, handling the separated slices is particularly easy.
  • the forming of the separation line takes place starting from a
  • the connecting plate is then formed as part of the holding device and has a connection region, which is materially connected - in particular by gluing - with the blank. It is advantageous if the holding region is designed as a suction gripper.
  • the suction pad for holding the blank preferably has a flat
  • the groove bottom is formed inside the blank or inside the connecting plate. In this way, the at least one plate-shaped portion formed in the blank remains with the blank directly or over the
  • connection is sufficient to hold the plate-shaped portion for subsequent separation for separating a disc in a stable processing position.
  • Recess is formed in the blank by reaching an end position in the feed direction, wherein the end position is achieved prior to penetration of the first cutting device, such as a cutting wire in the holding region of the holding device.
  • the method according to the invention is particularly well suited for singulating a wafer block in wafer slices.
  • the wafer block is preferably formed from a semiconductor material, in particular containing silicon.
  • it is no longer absolutely necessary to cut the cross section of the wafer block to the essentially square or circular cross section of the wafer block to be cut
  • a cross-sectional area of the wafer block can be provided in this way be that the outer contour of the wafer block comprises only a part of the outer contour of the waferblock to be cut wafer wafer.
  • Waferblocks in particular by separating the at least one formed in the wafer block plate-shaped portion, the rest of the outer contour of the cut out of the wafer block wafer disc and is thus freely designable within certain limits. In this case, a separated residual surface then remains on the wafer block. In this way are also asymmetric
  • Cross sections of the wafer block conceivable. Particularly preferred is a rectangular cross-section. In addition, its corners may be rounded and / or chamfered.
  • a cross section having at most three symmetry axes. The cross section preferably has two axes of symmetry or one axis of symmetry.
  • one part of the outer contour of the separated wafer wafer has a different roughness than the rest of the outer contour. This is due in particular to the fact that one part of the outer contour is determined in particular by another preceding processing method on the wafer block.
  • the outer surfaces of a wafer block arise through
  • the outer surfaces are additionally polished.
  • the roughness of the remainder of the outer contour is formed as a result of the separation process of the wafer wafer from the wafer block.
  • Wafer block singled wafer wafer more than three axes of symmetry Wafer block singled wafer wafer more than three axes of symmetry.
  • the cross-sectional area is, for example, square or circular.
  • FIG. 1b shows the separating device from FIG. 1a in a side view in a sectional view
  • FIG. 2a is a schematic partial section of a second embodiment of the separating device according to the invention together with a wafer block in the front view, and
  • Fig. 2b the separating device of Fig. 2a in the side view in a sectional view.
  • Fig. La and lb show schematically a partial section of a first
  • the separating device 100 comprises in particular a holding device 110.
  • the holding device 110 has a holding region 120.
  • the separating device 100 can accommodate various types of workpieces and can be used for a machining operation relative to the
  • the holding region 120 is designed as a suction gripper.
  • the suction gripper 120 preferably has a flat connection surface 121. This is for holding, for example, a silicon wafer block 10 on a mating surface, wherein the mating surface is an outer surface of the wafer block 10.
  • a holding force F is generated in the suction pad 120 by applying a negative pressure, so that the wafer block 10 is held indirectly.
  • the separating device 100 has a first cutting device 130.
  • the first cutting device 130 comprises at least one cutting wire 131, by means of which recesses 25 are introduced into the wafer block 10 by the removal of material.
  • the at least one cutting wire 131 on its outer surface on an abrasive, which removes material from the wafer block 10 due to a reciprocating motion of the cutting wire 131 in the direction of movement of the cutting wire 131.
  • the separating device 100 comprises an additional second cutting device 140.
  • the second cutting device 140 is formed inter alia by a cutting wire 141, which is designed as an erosion wire.
  • a cutting wire 141 which is designed as an erosion wire.
  • Cutting device 140 are other components of the first and second cutting devices 130, 140, as are well known in wire sawing devices, not shown for the sake of simplicity.
  • FIG. 1a a wafer block 10 held by the holding device 110 is shown in FIG. 1a.
  • the wafer block 10 is rectangular in cross-section, wherein the longitudinal edges of the wafer block are chamfered to different degrees.
  • a first chamfer are two lower chord edges 14 with corresponding
  • Beveled surfaces formed. These opposite are also formed by a second chamfering two upper chamfer edges 15 with corresponding chamfer surfaces. Overall, the described chamfering results in three equal side edges 11, 12 with corresponding side surfaces and a comparatively shorter side edge 13 with a corresponding side surface. The two side edges 12 and the side edges 11 and 13 are respectively
  • the cross section of the wafer block 10 has an overall symmetry line Sl.
  • the side surfaces and the chamfer surfaces of the wafer block 10 are preferred polished. From the wafer block 10 wafer wafers 50 'are isolated by means of the method according to the invention.
  • the process according to the invention is described as shown in FIGS. 1a and 1b.
  • the wafer block 10 is received and held by the holding device 110.
  • the holding device 110 can be positioned, for example, by a positioning unit, not shown, in the three spatial directions. In this way, the connection surface 121 of the suction pad 120 is placed on a side surface of the wafer block 10 and a negative pressure for generating a holding force F is applied.
  • a positioning unit not shown
  • subsequent method step b) is at least one groove 25 in the
  • the at least one cutting wire 131 of the first cutting device 130 is brought into an initial position PI.
  • the initial position PI is defined, for example, by abutment of the at least one cutting wire 131 on the side surface of the wafer block 10, which is formed by the side edge 11.
  • the cutting wire 131 has a defined distance x to the end face of the
  • the distance dimension x defines the thickness d of the at least one wafer wafer 50 'to be cut out of the wafer block 10.
  • the feed direction VI is oriented for example perpendicular to the side surface of the wafer block 10, which is formed by the side edge 13.
  • the groove 25 is formed in the wafer block 10.
  • the cutting wire 131 faces during the
  • the groove 25 in the wafer block 10 is completed when reaching an end position P2 in the feed direction VI.
  • the cutting wire 131 overall has a sufficient distance to the holding region 120 or to the holding device 110.
  • the groove 25 has a groove bottom 21, which follows the curved course of the cutting wire 131.
  • the residual material thickness in the end position P2 is greatest, for example 1 to 2 mm.
  • a plate-shaped portion 50 is formed in the wafer block 10 as a result of the introduced groove 25, which due to the Residual material thickness to the side surface, which is formed by the side edge 13, with the wafer block 10 remains directly connected.
  • further grooves 25 can be made in the wafer block 10 to form further plate-shaped sections 50. This can be done on the one hand by the at least one cutting wire 131, which is brought into a further starting position PI '.
  • the cutting device 130 may have a plurality of cutting wires 131, which are arranged parallel to each other for simultaneous
  • a distance of the grooves 25 is provided, which corresponds to the thickness of at least one of the wafer block 10 to be cut wafer wafer 50 '.
  • Waferblock 10 formed plate-shaped portion 50 by means of the first or by means of the second cutting device 130, 140 as a separated wafer disk 50 'from the wafer block 10 separated.
  • the first or by means of the second cutting device 130, 140 as a separated wafer disk 50 'from the wafer block 10 separated.
  • Cutting wire 141 is brought into an initial position P3.
  • the starting position P3 is defined for example by abutment of the cutting wire 141 on the end face of the wafer block 10.
  • the separation of the wafer wafer 50 'to be separated takes place by forming a separation line 30.
  • the cutting wire 141 is transformed into a second
  • Feed direction V2 moves, wherein the second feed direction V2 in
  • the separation line 30 is rectilinear and in particular formed within the groove 25, so that after forming the separation line 30 of the previously plate-shaped portion 50 as
  • Wafer disk 50 ' is separated. If a plurality of grooves 25 are introduced in the wafer block 10, the further plate-shaped design can be achieved by further movement of the cutting wire 141 in the second feed direction V2
  • Sections 50 are sequentially separated as further wafer wafers 50 '.
  • An isolated wafer slice 50 ' for example, by means of a not shown handling device a further process step, for example, a rinsing process supplied.
  • an initial position P3 'of the cutting wire 141 may be selected, which is defined, for example, as an abutment of the cutting wire 141 on one of the chamfer surfaces of the cutting wire
  • the cutting wire 141 is moved in a second feed direction V2 ', wherein the second feed direction V2' is oriented perpendicular to the first feed direction VI and perpendicular to the side surface of the wafer block 10, which by the
  • the cross-section of a singulated wafer disk 50 has four equally large bevel edges 14 with corresponding chamfer surfaces and four side edges 11, 12 of equal size. One of the side edges 11 has been formed by the separation line 30. Overall, the cross section of the isolated
  • Wafer disk 50 in contrast to the cross section of the wafer block 10 in total
  • FIG. 2 shows an alternative embodiment of the separating device 200.
  • the holding device 110 additionally comprises a connecting plate 150, on the first large surface 151 of which
  • Suction gripper 120 rests with its bearing surface 121. On the second
  • the first cutting device 230 differs from the first cutting device 130 according to FIGS. 1a and 1b in that the cutting wire 231 is formed as an erosion wire. For this reason, via a tension unit 233, the cutting wire 231 as
  • the cathode and the wafer block 20 are connected via the connection plate 150 and an additional anode contact 234 as an anode.
  • Wafer block 20 has a substantially square cross-section, wherein the corners 24 are rounded.
  • the wafer block 20 has a total of four symmetry axes Sl, S2, S3 and S4.
  • the starting position A is defined, for example, by concerns of
  • the at least one formed section 50 is separated at the side edge 23 along the edge of the adhesive layer 160 from the wafer block 20 as a wafer disk 50 '. Possibly. Adhesive residues of the adhesive layer 160 remain on the lateral edge 23, which can be removed by, for example, a detachment process by treatment with acetic acid or the like.
  • the starting position B is, for example, between the above
  • the at least one formed portion 50 is separated together with a part of the bonding plate 150 adhering via the adhesive layer 160.
  • the adhering via the adhesive layer 160 part of the connecting plate 150 can also be removed according to the above detachment process.
  • an initial position C is conceivable, which is provided, for example, still within the end face of the wafer block 20. This is preferably to be provided when a wafer block 10 with a rectangular cross section according to FIGS. 1a and 1b in wafer slices 50 'is to be singulated.
  • the severance line 30 can have an arbitrary course in addition to a straight-line course.
  • a curved course should be provided if a circular wafer slice 50 'is to be singulated out of a correspondingly shaped wafer block.
  • the outer contour of the wafer disk 50 ' is formed by a part of the outer contour of the correspondingly shaped wafer block and by a new part of the outer contour formed by the curved separating line 30.
  • the separation line 30 is in addition to the training by means of a cutting wire 131, 141, 231 further simplified produced by spark erosion through

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Le dispositif de séparation (100, 200) selon l'invention concerne un dispositif de maintien (110) avec une zone de maintien (120) au moyen de laquelle une ébauche métallique ou céramique (10, 20) est maintenue directement ou indirectement sur le dispositif de maintien (110). En outre, le dispositif de séparation (100, 200) comprend un premier dispositif de coupe (130, 230) avec au moins un fil de coupe (131, 231) pour la réalisation d'évidements (25) dans l'ébauche (10, 20) dans un premier sens d'avance (VI), ce qui permet de former au moins une partie (50) en forme de plaque dans l'ébauche (10, 20). Selon l'invention, le dispositif de séparation (100, 200) présente un deuxième dispositif de coupe (140) pour séparer de l'ébauche (10, 20), en tant que disque (50'), l'au moins une partie (50) en forme de plaque.
PCT/EP2012/075030 2011-12-28 2012-12-11 Dispositif de séparation et procédé de séparation d'une ébauche métallique ou céramique WO2013098070A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011090053A DE102011090053A1 (de) 2011-12-28 2011-12-28 Vereinzelungsvorrichtung und Verfahren zum Vereinzeln eines metallischen oder keramischen Rohteiles
DE102011090053.5 2011-12-28

Publications (1)

Publication Number Publication Date
WO2013098070A1 true WO2013098070A1 (fr) 2013-07-04

Family

ID=47326176

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/075030 WO2013098070A1 (fr) 2011-12-28 2012-12-11 Dispositif de séparation et procédé de séparation d'une ébauche métallique ou céramique

Country Status (2)

Country Link
DE (1) DE102011090053A1 (fr)
WO (1) WO2013098070A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723083A1 (de) * 1996-06-04 1997-12-11 Tokyo Seimitsu Co Ltd Drahtsäge und Schneidverfahren unter Einsatz derselben
EP1437209A1 (fr) * 2003-01-13 2004-07-14 HCT Shaping Systems SA Dispositif de sciage par fil
US20050009307A1 (en) * 2003-07-02 2005-01-13 Koichi Shigematsu Laser beam processing method and laser beam processing machine
US20060060180A1 (en) * 2004-09-17 2006-03-23 Sumco Corporation End supporting plate for single crystalline ingot
DE102008037653A1 (de) 2008-08-14 2010-02-18 Wacker Schott Solar Gmbh Verfahren zur Herstellung von Wafern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1268599B (de) * 1963-03-27 1968-05-22 Siemens Ag Verfahren zum Herstellen einkristalliner Staebe durch Aufwachsen aus der Gasphase
DE69526038T2 (de) * 1994-12-15 2002-10-31 Sharp K.K., Osaka Drahtgittersäge und Sägeverfahren
CH691169A5 (fr) * 1996-04-16 2001-05-15 Hct Shaping Systems Sa Dispositif pour la mise en élément de stockage de tranches obtenues par découpage d'un bloc.
DE102005014052A1 (de) * 2004-03-24 2005-10-13 Itb Gmbh Verfahren und Vorrichtung zum Schneiden eines Blocks in dünne Scheiben mittels Drahtsägen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723083A1 (de) * 1996-06-04 1997-12-11 Tokyo Seimitsu Co Ltd Drahtsäge und Schneidverfahren unter Einsatz derselben
EP1437209A1 (fr) * 2003-01-13 2004-07-14 HCT Shaping Systems SA Dispositif de sciage par fil
US20050009307A1 (en) * 2003-07-02 2005-01-13 Koichi Shigematsu Laser beam processing method and laser beam processing machine
US20060060180A1 (en) * 2004-09-17 2006-03-23 Sumco Corporation End supporting plate for single crystalline ingot
DE102008037653A1 (de) 2008-08-14 2010-02-18 Wacker Schott Solar Gmbh Verfahren zur Herstellung von Wafern

Also Published As

Publication number Publication date
DE102011090053A1 (de) 2013-07-04

Similar Documents

Publication Publication Date Title
EP1041649A1 (fr) Méthode de fabrication d'un module solaire à couche mince et appareil de coupe
CH669355A5 (fr)
CH624333A5 (fr)
EP3837076A1 (fr) Outil de chanfreinage
EP2682219A1 (fr) Procédé d'usinage d'une pièce
DE102022206057A1 (de) Abziehvorrichtung
DE10217097A1 (de) Verfahren zur Herstellung eines keramischen Laminats
DE10138896A1 (de) Schneideinsatz zum Fräsen und Fräswerkzeug
DE3218953C2 (de) Verfahren und Vorrichtung zur Ausbildung einer Schrägrille in einer Halbleitervorrichtung
EP0432637B1 (fr) Dispositif pour dresser le tranchant d'un outil de tronçonnage lors du tronçonnage de tranches d'un barreau ou d'une pièce en bloc, en particulier d'un matériau semi-conducteur, son application et procédé de sciage
DE60315670T2 (de) Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
WO2013098070A1 (fr) Dispositif de séparation et procédé de séparation d'une ébauche métallique ou céramique
DE19916071B4 (de) Verfahren zum Vereinzeln von Halbleiterbauelementen und Trennvorrichtung
DE19840508A1 (de) Verfahren zum Vereinzeln von Halbleiter-Bauelementen
DE68924502T2 (de) Verfahren zur Herstellung von Einzelsubstraten.
EP3695944B1 (fr) Procédé et dispositif de division des objets en forme de plaque de matériaux friables
DE102009000073A1 (de) Verfahren und Vorrichtung zur elektrochemischen Bearbeitung von Substraten
EP1518631A1 (fr) Dispositif pour le reformage et/ou l'enlèvement de dépôts, en particulier pour les électrodes de soudage par résistance.
EP2765617A2 (fr) Procédé de fabrication de barreaux de silicium, en particulier de barreaux de silicium pour cellules solaires, et dispositif de fabrication de barreaux de silicium
DE102010004341B4 (de) Verfahren zur Bearbeitung von Stangen- oder Rohrmaterial oder Einlegeteilen zur Herstellung von rotationssymmetrischen Werkstücken
WO2021073675A1 (fr) Procédé et électrode pour usiner des pièces par usinage électrochimique
DE4006070C2 (fr)
DE102012210047A1 (de) Verfahren zum Schneiden eines Einkristalls
DE202010013713U1 (de) Vorrichtung zum Trennen eines Rohres
DE112011103571T5 (de) Schneideinsatz mit abgewinkelter Schneidkante, Schneidwerkzeug und Verfahren

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12798746

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 12798746

Country of ref document: EP

Kind code of ref document: A1