DE68924502T2 - Verfahren zur Herstellung von Einzelsubstraten. - Google Patents

Verfahren zur Herstellung von Einzelsubstraten.

Info

Publication number
DE68924502T2
DE68924502T2 DE1989624502 DE68924502T DE68924502T2 DE 68924502 T2 DE68924502 T2 DE 68924502T2 DE 1989624502 DE1989624502 DE 1989624502 DE 68924502 T DE68924502 T DE 68924502T DE 68924502 T2 DE68924502 T2 DE 68924502T2
Authority
DE
Germany
Prior art keywords
production
single substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1989624502
Other languages
English (en)
Other versions
DE68924502D1 (de
Inventor
Tsutomu Satoh
Kouichi Nishimaki
Shin-Ichi Endoh
Toyoharu Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Naoetsu Electronics Co Ltd
Original Assignee
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd filed Critical Naoetsu Electronics Co Ltd
Application granted granted Critical
Publication of DE68924502D1 publication Critical patent/DE68924502D1/de
Publication of DE68924502T2 publication Critical patent/DE68924502T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
DE1989624502 1988-06-28 1989-06-19 Verfahren zur Herstellung von Einzelsubstraten. Expired - Fee Related DE68924502T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63162043A JPH0210727A (ja) 1988-06-28 1988-06-28 半導体ウエハの分割方法および装置

Publications (2)

Publication Number Publication Date
DE68924502D1 DE68924502D1 (de) 1995-11-16
DE68924502T2 true DE68924502T2 (de) 1996-04-04

Family

ID=15747004

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989624502 Expired - Fee Related DE68924502T2 (de) 1988-06-28 1989-06-19 Verfahren zur Herstellung von Einzelsubstraten.

Country Status (4)

Country Link
EP (1) EP0348783B1 (de)
JP (1) JPH0210727A (de)
KR (1) KR960008895B1 (de)
DE (1) DE68924502T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695504B2 (ja) * 1989-10-31 1994-11-24 直江津電子工業株式会社 ウエハ枚葉式内周刃２分割切断装置におけるウエハ供給回収装置
JPH06103675B2 (ja) * 1990-10-29 1994-12-14 直江津電子工業株式会社 半導体ウエハの２分割切断におけるウエハの中心位置決め方法
JPH06112451A (ja) * 1992-09-29 1994-04-22 Nagano Denshi Kogyo Kk Ｓｏｉ基板の製造方法
EP0709878B1 (de) * 1994-10-24 1998-04-01 Naoetsu Electronics Company Verfahren zur Herstellung von Einzelsubstraten aus einem Silizium-Halbleiterwafer
JP2820024B2 (ja) * 1994-03-04 1998-11-05 信越半導体株式会社 シリコン半導体素子製造用基板の製造方法
DE19739965A1 (de) * 1997-09-11 1999-03-18 Wacker Siltronic Halbleitermat Sägeleiste zum Fixieren eines Kristalls und Verfahren zum Abtrennen von Scheiben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302762A (de) * 1963-06-01
US3936328A (en) * 1972-04-28 1976-02-03 Mitsubishi Denki Kabushiki Kaisha Process of manufacturing semiconductor devices
FR2590879A1 (fr) * 1985-11-27 1987-06-05 American Telephone & Telegraph Procede et appareil pour le chargement et le dechargement automatiques de tranches de semi-conducteur
JPS6323332A (ja) * 1986-04-28 1988-01-30 バリアン・アソシエイツ・インコ−ポレイテツド ウエーハ移送方法及び装置
US4808059A (en) * 1986-07-15 1989-02-28 Peak Systems, Inc. Apparatus and method for transferring workpieces

Also Published As

Publication number Publication date
DE68924502D1 (de) 1995-11-16
KR960008895B1 (en) 1996-07-05
EP0348783B1 (de) 1995-10-11
EP0348783A2 (de) 1990-01-03
JPH0210727A (ja) 1990-01-16
EP0348783A3 (de) 1991-04-10

Similar Documents

Publication Publication Date Title
DE3789746T2 (de) Verfahren zur Herstellung von Zink-Nickel-Phosphatüberzügen.
DE58906156D1 (de) Verfahren zur Herstellung von Membranen.
DE68921565T2 (de) Verfahren zur Herstellung von Phosphoren.
ATE66678T1 (de) Verfahren zur herstellung von makrolidderivaten.
DE68916393D1 (de) Verfahren zur Herstellung von ebenen Wafern.
DE58906148D1 (de) Verfahren zur Herstellung von Aminen.
DE68921655D1 (de) Verfahren zur Herstellung von Mustern.
DE58908451D1 (de) Verfahren zur Herstellung von Organochlorsilanen.
DE68918207D1 (de) Verfahren zur Herstellung von Levodopa.
DE3789557T2 (de) Verfahren zur Herstellung von Maleimid.
DE58906613D1 (de) Verfahren zur Herstellung von orthodontischen Teilen.
DE68923643D1 (de) Verfahren zur Herstellung von L-Tryptophan.
DE68922360D1 (de) Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen.
DE68918050D1 (de) Verfahren zur Herstellung von Windschutzscheiben.
DE68920351D1 (de) Verfahren zur Herstellung von Indigoverbindungen.
ATE86619T1 (de) Verfahren zur herstellung von nitroethenderivaten.
DE58906122D1 (de) Verfahren zur Herstellung von Phenylethanolen.
DE68920087T2 (de) Verfahren zur Herstellung von Neuraminidase.
DE58904105D1 (de) Verfahren zur herstellung von hexafluorpropen.
DE68924502T2 (de) Verfahren zur Herstellung von Einzelsubstraten.
ATE94538T1 (de) Verfahren zur herstellung von harnstoffen.
DE68913917D1 (de) Verfahren zur Herstellung von Ethylendiaminen.
ATE85321T1 (de) Verfahren zur herstellung von anilinofumaraten.
DE69005770T2 (de) Verfahren zur Herstellung von Pentafluordichlorpropanen.
DE68905528T4 (de) Verfahren zur Herstellung von Oximen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee