WO2013097126A1 - 电路基板及其制作方法 - Google Patents
电路基板及其制作方法 Download PDFInfo
- Publication number
- WO2013097126A1 WO2013097126A1 PCT/CN2011/084870 CN2011084870W WO2013097126A1 WO 2013097126 A1 WO2013097126 A1 WO 2013097126A1 CN 2011084870 W CN2011084870 W CN 2011084870W WO 2013097126 A1 WO2013097126 A1 WO 2013097126A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass film
- resin
- glass
- circuit board
- circuit substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 131
- 229920005989 resin Polymers 0.000 claims abstract description 111
- 239000011347 resin Substances 0.000 claims abstract description 111
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000011888 foil Substances 0.000 claims abstract description 20
- 239000011148 porous material Substances 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 27
- 239000005373 porous glass Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000945 filler Substances 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 10
- 239000005062 Polybutadiene Substances 0.000 claims description 9
- 229910002113 barium titanate Inorganic materials 0.000 claims description 9
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 9
- 229920002857 polybutadiene Polymers 0.000 claims description 9
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 8
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 7
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 5
- 229920006026 co-polymeric resin Polymers 0.000 claims description 5
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001955 polyphenylene ether Polymers 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000005354 aluminosilicate glass Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical group C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 3
- 229910052618 mica group Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 239000000454 talc Substances 0.000 claims description 3
- 229910052623 talc Inorganic materials 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 2
- 150000003949 imides Chemical class 0.000 claims 1
- 239000012876 carrier material Substances 0.000 abstract description 4
- 238000011112 process operation Methods 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 33
- 239000011889 copper foil Substances 0.000 description 18
- 239000004744 fabric Substances 0.000 description 18
- 239000003365 glass fiber Substances 0.000 description 18
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 7
- 230000009477 glass transition Effects 0.000 description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012779 reinforcing material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- WOQLPPITHNQPLR-UHFFFAOYSA-N 1-sulfanylpyrrolidin-2-one Chemical compound SN1CCCC1=O WOQLPPITHNQPLR-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
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- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/302—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising aromatic vinyl (co)polymers, e.g. styrenic (co)polymers
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- B32B27/322—Layered products comprising a layer of synthetic resin comprising polyolefins comprising halogenated polyolefins, e.g. PTFE
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
- B32B3/18—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material characterised by an internal layer formed of separate pieces of material which are juxtaposed side-by-side
- B32B3/20—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material characterised by an internal layer formed of separate pieces of material which are juxtaposed side-by-side of hollow pieces, e.g. tubes; of pieces with channels or cavities
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/02—Synthetic macromolecular particles
- B32B2264/0214—Particles made of materials belonging to B32B27/00
- B32B2264/0257—Polyolefin particles, e.g. polyethylene or polypropylene homopolymers or ethylene-propylene copolymers
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- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/704—Crystalline
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1056—Perforating lamina
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249982—With component specified as adhesive or bonding agent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249982—With component specified as adhesive or bonding agent
- Y10T428/249985—Composition of adhesive or bonding component specified
Definitions
- the present invention relates to a circuit board for a printed circuit and a method of fabricating the same. Background technique
- the dimensional stability of the circuit substrate is required to be higher and higher, in order to reduce the thermal stress generated during the thermal shock process of the circuit substrate, and to satisfy the components in the installation and assembly process.
- the hole alignment is accurate, and the substrate is required to be in the direction of ⁇ , ⁇ , ⁇
- the X, ⁇ , and ⁇ directions are the length, width, and thickness direction of the board, respectively).
- the copper clad laminate is generally made of glass fiber cloth as a reinforcing material, and the glass fiber cloth is limited by the manufacturing process, and the void ratio of the woven material is large, and the ratio of the glass fiber cloth to the resin in the coated copper plate material is affected (
- the glass accounts for less than 45% by volume of the total volume of the glass fiber cloth and the resin, and the CTE of the copper-clad board X and the ⁇ direction is about 16-18 ppm/°C.
- U.S. Patent Application No. 20040037950A1 uses a thin glass film instead of a glass fiber cloth for the production of a copper clad laminate.
- This patent application discloses that the structure of a multilayered board is composed of a glass film, a resin layer and a copper foil layer, but this patent application does not disclose how to obtain a good bonding force between the glass film surface and the resin layer. Since the surface of the glass film is smooth, the resin layer cannot form a good bonding force with the resin layer, so that the circuit copper wire attached to the resin layer is easily peeled off from the glass film along with the resin layer, thereby causing this manner. The reliability of the fabricated CCL in PCB fabrication, assembly of PCB components, and the use of electronic products is not high, resulting in the retirement of electronic products. Summary of the invention
- Another object of the present invention is to provide a circuit substrate produced by using the above porous glass film, and controlling the number of pores in the glass film so that the volume percentage of the glass (relative to the whole glass film) is 45% or more, so that the circuit substrate The CTE in the X and Y directions is reduced compared to the original.
- a further object of the present invention is to provide a method for fabricating a circuit substrate, which uses a porous glass film as a carrier material, has good formability, and has a process operation cylinder.
- the present invention provides a circuit substrate comprising a porous glass film having a volume percentage of 45% or more of glass, a resin bonding layer respectively located on both sides of the glass film, and a resin bonding layer located at the resin
- the metal foil on the outer side of the bonding layer, the glass film, the resin bonding layer, and the metal foil are bonded together by pressing, and the resin of the resin bonding layer is filled in the pores of the glass film.
- the glass film in the glass film occupies a volume percentage of between 45% and 90%.
- the glass film has a volume percentage of between 65% and 80%.
- the glass component of the glass film is an aluminosilicate glass having an alkali metal oxide of less than 0.3% by weight or a borosilicate glass having an alkali metal oxide of less than 0.3% by weight.
- the thickness of the glass film is selected to be between 20 ⁇ m and 1.1 mm.
- the pores in the glass film are uniformly distributed, and the pore diameter is from 20 ⁇ m to 300 ⁇ m.
- the surface of the glass film is subjected to roughening treatment.
- the resin in the resin bonding layer is selected from the group consisting of epoxy resins, cyanate resins, phenol resins, polyphenylene ether resins, polybutadiene resins, polybutadiene and styrene copolymer resins, and polytetrafluoroethylene trees.
- PCT polybenzoxazine resin, polyimide, silicone-containing resin, bismaleimide triazine resin,
- One or more of LCP resin and bismaleimide resin are One or more of LCP resin and bismaleimide resin.
- the resin bonding layer contains a powder filler selected from the group consisting of crystalline silica, molten silica, spherical silica, barium titanate, barium titanate, barium titanate. , boron nitride, aluminum nitride, silicon carbide, aluminum oxide, titanium dioxide, glass powder, glass chopped fibers, talc, mica powder, carbon black, carbon nanotubes, metal powder, polyphenylene sulfide and PTFE powder
- a powder filler selected from the group consisting of crystalline silica, molten silica, spherical silica, barium titanate, barium titanate. , boron nitride, aluminum nitride, silicon carbide, aluminum oxide, titanium dioxide, glass powder, glass chopped fibers, talc, mica powder, carbon black, carbon nanotubes, metal powder, polyphenylene sulfide and PTFE powder
- One or more of the powder fillers have a median particle diameter of
- the present invention also provides a method for fabricating the above circuit substrate, comprising the following steps: Step 1: providing a porous glass film having a volume fraction of 45% or more of glass; Step 2: superposing on both sides of the glass film One or several prepregs;
- Step 3 Laminating a metal foil on each side of the prepreg that is not in contact with the glass film;
- Step 4 placing the laminated laminate into a press for hot pressing to obtain the circuit substrate, and curing temperature is 100° C ⁇ 400 ° C, curing pressure is 10Kg / cm 2 ⁇ 65Kg / cm 2 .
- the pores in the glass film are uniformly distributed, and the pore diameter is from 20 ⁇ m to 300 ⁇ m, and is processed by laser, mechanical or chemical selective etching.
- the present invention also provides another manufacturing method of the above circuit substrate, comprising the following steps: Step 1: providing a porous glass film having a volume fraction of 45% or more of glass; Step 2: respectively on both sides of the glass film Laminating a resin coated metal foil;
- Step 3 The laminated laminate is placed in a press for hot pressing to obtain the circuit substrate, the curing temperature is 100 ° C to 400 ° C, and the curing pressure is 10 Kg / cm 2 ⁇ 65 Kg / cm 2 .
- the pores in the glass film are uniformly distributed, and the pore diameter is from 20 ⁇ m to 300 ⁇ m, and is processed by laser, mechanical or chemical selective etching.
- a porous glass film is used as a carrier material because the resin can enter the pores of the glass film to function as a pin, so that the resin bonding layer has a good bonding force with the glass;
- the amount of pores in the glass film is controlled so that the volume fraction of the glass (relative to the whole glass film) is more than 45%, so that the CTE of the X, ⁇ , and ⁇ directions of the circuit substrate and the original glass fiber cloth are used as the reinforcing material.
- the copper clad laminate Compared with the copper clad laminate;
- FIG. 1 is a schematic structural view of a circuit substrate of the present invention. detailed description
- the circuit substrate of the present invention comprises a glass film 10 having a porosity percentage of 45% or more (relative to a monolithic glass film) occupied by glass, and resins respectively located on both sides of the glass film 10.
- the adhesive layer 20 and the metal foil 30 located outside the resin adhesive layer 20, the glass film 10, the resin adhesive layer 20, and the metal foil 30 are bonded together by pressing, and the resin of the resin adhesive layer 20 It is filled in the pores 11 of the glass film 10.
- volume percentage occupied by glass refers to the glass of porous 11 The ratio of the volume of the glass in the glass film 10 to the sum of the volumes of the glass and the pores 11 in the glass film 10.
- the glass in the glass film 10 occupies a volume percentage of between 45% and 90%.
- the volume fraction of the glass is more than 90%, the resin filled in the pores 11 of the glass film 10 is too small, and as a result of the good peel strength being improved, when the volume fraction of the glass is less than 45%, the glass film 10 is The pores 11 are filled with too much resin, and the effect of improving the C, X, Y, and C directions is not obtained.
- the resin in the resin bonding layer 20 is selected from the group consisting of an epoxy resin, a cyanate resin, a phenolic resin, a polyphenylene ether resin, a polybutadiene resin, a polybutadiene and a styrene copolymer resin, and a polytetraethylene resin.
- the glass component of the glass film 10 is preferably an aluminosilicate glass having an alkali metal oxide of less than 0.3% by weight or a borosilicate glass having an alkali metal oxide of less than 0.3% by weight.
- the thickness of the glass film 10 may be selected from the range of 20 ⁇ m to 1.1 mm.
- the pores 11 in the glass film 10 are uniformly distributed, and have a pore diameter of 20 ⁇ m to 300 ⁇ m, which is processed by laser, mechanical or chemical selective etching.
- the surface of the glass film 10 may also be roughened by one or more of brushing, chemical etching, frosting, sol-gel method, and mechanical polishing. Increasing the contact area allows the glass film 10 to achieve a better bond with the resin.
- the above-mentioned resin bonding layer 20 may further contain a powder filler, and the powder filler serves the purpose of improving dimensional stability and lowering CTE.
- the above-mentioned resin adhesive layer 20 may further contain a fluoropolymer having a low dielectric loss in an amount of from 0 to 70% by volume based on the total amount of the fluoropolymer and the powder filler.
- the powder filler is selected from the group consisting of crystalline silica, molten silica, spherical silica, barium titanate, barium titanate, barium titanate, boron nitride, aluminum nitride, silicon carbide, aluminum oxide.
- the preferred powder filler is molten Silica or titanium dioxide.
- the median diameter of the powder filler is 0.01 to 15 ⁇ m, and the median diameter of the powder filler is preferably 0.5 to 10 ⁇ m.
- the surface of the powder filler can be treated, such as with a coupling agent.
- the resin bonding layer 20 further includes a reinforcing agent, and the auxiliary agent includes an emulsifier, a dispersing agent, and the like.
- the material of the metal foil 30 is copper, aluminum, nickel, or an alloy of these metals.
- the above circuit substrate can be fabricated by various methods.
- One of the above-mentioned circuit substrates The law consists of the following steps:
- Step 1 providing a porous glass film having a volume percentage of 45% or more of glass; Step 2: laminating one or several prepregs on both sides of the glass film;
- Step 3 Laminating a metal foil on each side of the prepreg that is not in contact with the glass film;
- Step 4 placing the laminated laminate into a press for hot pressing to obtain the circuit substrate, and curing temperature is 100° C ⁇ 400 ° C, curing pressure is 10Kg / cm 2 ⁇ 65Kg / cm 2 . Wherein, the prepreg is pressed to form the resin bonding layer.
- the volume fraction of glass is preferably between 45% and 90%.
- the pores in the glass film are uniformly distributed, and the pore diameter is 20 ⁇ to 300 ⁇ , which is processed by laser, mechanical or chemical selective etching.
- the surface of the glass film is further roughened.
- the prepreg is made of a resin-impregnated glass fiber cloth, and the resin is selected from the group consisting of an epoxy resin, a cyanate resin, a phenol resin, a polyphenylene ether resin, a polybutadiene resin, and a polybutylene. Diene and styrene copolymer resin, polytetrafluoroethylene resin, polybenzoxazine resin, polyimide, silicone resin, bismaleimide triazine resin ( ⁇ resin), LCP (Liquid Crystal Polymer) One or more of a resin and a bismaleimide resin.
- Another manufacturing method of the above circuit substrate includes the following steps:
- Step 1 Provide a porous glass film with a volume percentage of glass (relative to the whole glass film) of more than 45%;
- Step 2 laminating a resin coated metal foil on both sides of the glass film
- Step 3 The laminated laminate is placed in a press for hot pressing to obtain the circuit substrate, the curing temperature is 100 ° C to 400 ° C, and the curing pressure is 10 Kg / cm 2 ⁇ 65 Kg / cm 2 . Wherein, the resin on the resin-coated metal foil is pressed to form the resin bonding layer.
- the volume fraction of glass is preferably between 45% and 90%.
- the pores in the glass film are uniformly distributed, and the pore diameter is 20 ⁇ m to
- the surface of the glass film is further roughened.
- the resin-coated metal foil is produced by coating a resin on a metal foil selected from the group consisting of epoxy resins, cyanate resins, phenol resins, polyphenylene ether resins, polybutadiene resins, and the like.
- a resin on a metal foil selected from the group consisting of epoxy resins, cyanate resins, phenol resins, polyphenylene ether resins, polybutadiene resins, and the like.
- Example 1 For the circuit substrate produced as described above, further detailed description and description are given as in the following embodiments.
- Example 1 For the circuit substrate produced as described above, further detailed description and description are given as in the following embodiments.
- FR-4 prepreg ie, prepreg for S1141 CCL product of Guangdong Shengyi Technology
- FR-4 prepreg is made by impregnating epoxy resin (dicyanamide curing agent) with 0.1mm glass fiber cloth (2116 glass fiber cloth). , to superimpose; then put a piece of copper foil up and down, and then fold.
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 15 kg/cm 2 .
- the circuit substrate-clad laminate was hot pressed, and the obtained circuit substrate was tested.
- the peel strength of the copper foil and the prepreg was 1.7 N/mm, and the peel strength of the prepreg and the glass film was 1.2 N/mm.
- the CTE in the X and Y directions before the glass transition temperature was 8.2 ppm/. C, 7.8ppm/. C.
- the FR-4 prepreg (that is, the prepreg for the S1141 CCL product of Guangdong Shengyi Technology) is made by impregnating the epoxy resin with a glass fiber cloth (1080 glass fiber cloth) with a thickness of 0.06 mm, and then superimposed; Then put a piece of copper foil on each and then stack it.
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 15 kg/cm 2 .
- the circuit substrate-clad laminate was hot pressed, and the obtained circuit substrate was tested.
- the peel strength of the copper foil and the prepreg was 1.7 N/mm, and the peel strength of the prepreg and the glass film was 0.8 N/mm.
- the CTE in the X and Y directions before the glass transition temperature was 7.1 ppm/. C, 6.8ppm/. C.
- the FR-4 prepreg (that is, the prepreg for the S1141 CCL product of Guangdong Shengyi Technology) is made by impregnating the epoxy resin with a glass fiber cloth (1080 glass fiber cloth) with a thickness of 0.06 mm, and then superimposed; Then put a piece of copper foil on each and then stack it.
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 25 kg/cm 2 .
- the circuit substrate-clad laminate was hot pressed, and the obtained circuit substrate was tested.
- the peel strength of the copper foil and the prepreg was 1.75 N/mm, and the peel strength of the prepreg and the glass film was 0.9 N/mm.
- the CTE in the X and Y directions before the glass transition temperature were 12.6 ppm/° C. and 12.3 ppm/° C., respectively. Comparative Example 1:
- FR-4 prepreg made of five sheets of 0.1mm glass fiber cloth (2116 glass fiber cloth) impregnated with epoxy resin (dicyandiamide curing agent) (ie, S1141 copper clad laminate product of Guangdong Shengyi Technology) Prepreg), stack, then place a piece of copper foil up and down, and then fold.
- epoxy resin dicyandiamide curing agent
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 25 kg/cm 2 .
- the circuit substrate, the copper clad laminate, was hot pressed, and the obtained circuit substrate was tested.
- the peel strength of the copper foil was 1.75 N/mm; the CTE in the X and Y directions before the glass transition temperature was 17.6 ppm/°, respectively. C, 17.3 ppm / ° C.
- FR- 4 Prepreg ie, prepreg for S1141 CCL products from Guangdong Shengyi Technology: Folding; then placing a piece of copper foil on top and bottom, then laminating.
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 15 kg/cm 2 .
- the circuit substrate-clad laminate was hot pressed, and the obtained circuit substrate was tested.
- the copper foil was adhered to the prepreg and directly peeled off from the glass film to show a peeling strength of 0.1 N/mm;
- the CTEs in the X and Y directions before the temperature were 6.8 ppm/°C and 7.3 ppm/°C, respectively.
- the circuit substrate made of the porous glass film not only lowers the CTE in the X and Y directions of the circuit board, but also has good peel strength.
- the examples reveal that when the volume fraction of glass in the porous glass film is 45% to 90%, the pore diameter is 20 ⁇ m to 300 ⁇ m, and good peel strength and CTE in the X and ⁇ directions can be simultaneously obtained.
- the above laminated laminate was placed in a press under a vacuum at a curing temperature of 180 ° C and a curing pressure of 15 kg/cm 2 .
- the circuit substrate-clad laminate was subjected to hot pressing, and the obtained circuit substrate was tested.
- the peel strength of the resin layer and the glass film was 1.3 N/mm; the CTE in the X and Y directions before the glass transition temperature was 6.6 ppm. /°C.
- NMP N-mercaptopyrrolidone
- the polyimide precursor solution is a thermoplastic polyimide precursor solution.
- thermoplastic polyimide precursor solution is coated on the rough surface of copper and foil, and the coating thickness is
- the obtained circuit substrate was tested, and the peeling strength of the resin layer and the glass film was 1.3 N/mm; and the CTE in the X and Y directions before the glass transition temperature was 6.8 ppm/°C.
- Example 4 a circuit board was produced by using a resin-coated copper foil in combination with a porous glass film, and good peel strength and low X and Y direction CTE were obtained.
- Example 5 a resin-coated copper foil to which a powder filler was added in a resin layer and a porous glass film were used to produce a circuit board, and the CTE in the X and Y directions was further reduced as compared with Example 4.
- Example 6 a resin-coated copper foil using polyimide was used to form a circuit board in combination with a porous glass film, and good peel strength and low X, Y-direction CTE were also obtained.
- the circuit board produced by the above embodiment can be used not only as a circuit board substrate but also as an optical waveguide.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US14/368,437 US20140377534A1 (en) | 2011-12-29 | 2011-12-29 | Circuit substrate and manufacturing method thereof |
PCT/CN2011/084870 WO2013097126A1 (zh) | 2011-12-29 | 2011-12-29 | 电路基板及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2011/084870 WO2013097126A1 (zh) | 2011-12-29 | 2011-12-29 | 电路基板及其制作方法 |
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WO2013097126A1 true WO2013097126A1 (zh) | 2013-07-04 |
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PCT/CN2011/084870 WO2013097126A1 (zh) | 2011-12-29 | 2011-12-29 | 电路基板及其制作方法 |
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US (1) | US20140377534A1 (zh) |
WO (1) | WO2013097126A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015022956A1 (ja) * | 2013-08-14 | 2017-03-02 | デンカ株式会社 | 窒化ホウ素−樹脂複合体回路基板、窒化ホウ素−樹脂複合体放熱板一体型回路基板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590720A (ja) * | 1991-09-27 | 1993-04-09 | Ibiden Co Ltd | 複合プリント配線板 |
JPH05175625A (ja) * | 1991-12-25 | 1993-07-13 | Ibiden Co Ltd | 複合プリント配線板とその製造方法 |
JPH0818178A (ja) * | 1994-07-04 | 1996-01-19 | Hitachi Chem Co Ltd | 高周波回路用基板の製造方法 |
CN1413427A (zh) * | 1999-12-21 | 2003-04-23 | 弗劳恩霍弗应用技术研究院 | 多层印刷电路板 |
CN1532926A (zh) * | 2003-03-25 | 2004-09-29 | ��ʽ���綫֥ | 布线部件及其制造方法 |
-
2011
- 2011-12-29 WO PCT/CN2011/084870 patent/WO2013097126A1/zh active Application Filing
- 2011-12-29 US US14/368,437 patent/US20140377534A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590720A (ja) * | 1991-09-27 | 1993-04-09 | Ibiden Co Ltd | 複合プリント配線板 |
JPH05175625A (ja) * | 1991-12-25 | 1993-07-13 | Ibiden Co Ltd | 複合プリント配線板とその製造方法 |
JPH0818178A (ja) * | 1994-07-04 | 1996-01-19 | Hitachi Chem Co Ltd | 高周波回路用基板の製造方法 |
CN1413427A (zh) * | 1999-12-21 | 2003-04-23 | 弗劳恩霍弗应用技术研究院 | 多层印刷电路板 |
CN1532926A (zh) * | 2003-03-25 | 2004-09-29 | ��ʽ���綫֥ | 布线部件及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015022956A1 (ja) * | 2013-08-14 | 2017-03-02 | デンカ株式会社 | 窒化ホウ素−樹脂複合体回路基板、窒化ホウ素−樹脂複合体放熱板一体型回路基板 |
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