WO2013091331A1 - 一种减小电荷共享效应的cmos器件及其制备方法 - Google Patents

一种减小电荷共享效应的cmos器件及其制备方法 Download PDF

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WO2013091331A1
WO2013091331A1 PCT/CN2012/074076 CN2012074076W WO2013091331A1 WO 2013091331 A1 WO2013091331 A1 WO 2013091331A1 CN 2012074076 W CN2012074076 W CN 2012074076W WO 2013091331 A1 WO2013091331 A1 WO 2013091331A1
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gate
region
silicon
isolation region
cmos device
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French (fr)
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黄如
谭斐
安霞
黄芊芊
杨东
张兴
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北京大学
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Priority to US13/582,034 priority Critical patent/US8652929B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Definitions

  • the present invention relates to a COMS device, and in particular to a CMOS device for reducing charge sharing effects in a radiation environment and a method of fabricating the same.
  • the electron-hole pairs on a charged ion track will reach other components through diffusion movement before recombination, and are collected near more sensitive nodes.
  • the phenomenon is called the charge sharing effect.
  • the charge sharing effect causes multiple nodes of the integrated circuit to flip at the same time, increasing the flip cross section and reducing the energy threshold required for flipping.
  • charge sharing effects can cause failures in radiation-resistant reinforcement techniques such as device-level and circuit-level protection loops.
  • the present invention proposes a CMOS device capable of reducing the collective collection of charges by a plurality of devices when a single particle is incident on one device.
  • the device of the present invention includes a substrate, an isolation region, an active region, a gate region, an LDD region, a gate spacer, a source region, and a drain region, wherein an additional isolation region for trapping carriers is disposed directly under the isolation region.
  • the material of the additional isolation region is a material having porous and dangling bonds, such as porous silicon or the like.
  • Another object of the present invention is to provide a method of fabricating a CMOS device that reduces the charge sharing effect in a radiation environment.
  • the method of fabricating the CMOS device of the present invention comprises the following steps:
  • the silicon wafer is placed in a mixed solution of hydrofluoric acid and alcohol, and the aluminum film on the back side of the substrate is used as an anode, and the platinum sheet is used as a cathode, and is etched by a constant current. After the etching is completed, the silicon wafer is taken out and cleaned. Etching the aluminum on the back side of the silicon wafer to form silicon-porous silicon to form an additional isolation region;
  • gate dielectric material such as silicon dioxide or a high-k material
  • the device of the present invention is provided with a material having porous and dangling bonds directly under the isolation region, such as an additional isolation region of porous silicon, since porous silicon is a functional material of a sponge-like structure formed by electrochemical anodization of a single crystal silicon wafer.
  • porous silicon is a functional material of a sponge-like structure formed by electrochemical anodization of a single crystal silicon wafer.
  • the characteristics of trapping carriers in the defect state of the porous silicon can be utilized to reduce the charge sharing effect caused by the heavy ions.
  • the formation of the shallow trench isolation STI region and the lower isolation region requires only one photolithography, and the process is simple and can
  • Figure 1 is a diagram showing the conventional isolation region cannot suppress the charge sharing effect under heavy ion radiation when heavy ions are incident on a small-sized conventional CMOS device
  • Figure 2 shows the defect of an additional isolation region made of porous silicon when electrons are separated from the incident device by the addition of additional isolation regions made of porous silicon under the isolation region of the conventional CMOS device. Captured schematic;
  • Fig. 3 is a cross-sectional view showing a CMOS device of the present invention for reducing the charge sharing effect in a radiation environment; and Figs. 4(a) to (f) are flow charts showing a method of fabricating a CMOS device according to an embodiment of the present invention.
  • NMOS device when struck by heavy ions, a large number of electron-hole pairs are ionized in the direction of the heavy ion track, and the holes move toward the substrate, and a part of the electrons are heavily weighted.
  • the ions are collected by the sensitive nodes of the device, and the other electrons are collected by diffusion from the isolation region of the device (such as the STI region) to the sensitive nodes of the surrounding devices. Therefore, by providing an additional isolation region 3 of porous silicon material under the device isolation region, electrons or holes can be trapped when diffused to surrounding devices, and the number of electron holes reaching the sensitive nodes of the surrounding devices can be reduced, thereby effectively suppressing charge sharing. The occurrence of an effect.
  • the CMOS device of the present invention includes a substrate 1, an isolation region 4, an active region 5, a gate region 6, an LDD region 7, a gate spacer 8, a source region and a drain region 9, wherein, in the isolation region An additional isolation region 3 is provided directly below, and the material of the additional isolation region is porous silicon.
  • the method for preparing the device of the present invention is further illustrated, which specifically includes the following steps:
  • a P-type silicon wafer having a crystal orientation of (100) is provided as the substrate 1, and the front surface a thereof is chemically polished into a mirror surface. After a conventional cleaning process, aluminum film 2 is formed on the back surface b to form an aluminum film 2 as an ohmic contact, and at the same time in the aluminum film. Apply an acid protection layer as shown in Figure 4 (a);

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

提供了一种减小电荷共享效应的CMOS器件及其制备方法。该CMOS器件包括衬底（1）、隔离区（4）、有源区（5）、栅区（6）、LDD区（7）、栅侧墙（8）、源区和漏区（9）以及在隔离区4的正下方设置俘获载流子的附加隔离区（3）。该附加隔离区的材料为多孔硅。该CMOS器件可减小重离子引起的电荷共享效应、可以提高集成电路的抗辐射性能，并且制造工艺简单。

Description

一种减小电荷共享效应的 CMOS器件及其制备方法
本申请要求于 2011年 12月 23日提交的中国专利申请 201110436842.8的优先权， 其全部内容通过引用合并于此。
技术领域
本发明涉及 COMS器件， 具体涉及一种减小辐射环境下电荷共享效应的 CMOS 器件及其制备方法。 背景技术
随着半导体技术的不断发展， 集成电路元器件的尺寸已经远远小于 100纳米。宇 宙空间中或者地面上高能带电离子在穿过集成电路元器件时，径迹中沉积的大量电子 空穴对会被集成电路元器件的敏感节点 （反偏 pn结） 所收集， 造成器件逻辑状态的 非正常改变或器件损坏。对于传统的集成电路中元器件， 器件间距离较大， 一个带电 离子径迹上的电子空穴对通常只能被一个元器件的敏感节点所收集。但是为了提高集 成电路的集成度，器件间距离不断缩小，一个带电离子径迹上的电子空穴对在复合前 会通过扩散运动到达其他元器件，在更多的敏感节点附近被收集，这一现象即称为电 荷共享效应。电荷共享效应会造成集成电路多个节点同时发生翻转，增大翻转横截面， 降低发生翻转所需要的能量阈值。此外， 电荷共享效应会造成如保护环等器件级和电 路级的抗辐射加固技术的失效。
如图 1所示， 当重离子入射到小尺寸的传统 CMOS器件时， 由重离子电离作用， 在重离子入射轨迹 05的附近生成的电子空穴对 04从入射主器件 02通过扩散运动到 达入射临近器件 03，传统的 CMOS器件的隔离区 01不能抑制重离子辐射下的电荷共 享效应。 发明内容 为了克服器件间距离变小产生多节点翻转以及加固技术失效等问题，本发明提出 一种可以减小单粒子入射一个器件时多个器件共同收集电荷的 CMOS器件。
本发明的一个目的在于提出一种减小辐射环境下电荷共享效应的 CMOS器件。 本发明的器件包括衬底、 隔离区、 有源区、 栅区、 LDD 区、 栅侧墙、 源区和漏 区， 其中， 在隔离区的正下方设置俘获载流子的附加隔离区。
该附加隔离区的材料为具有多孔和悬挂键的材料， 如多孔硅等。
本发明的另一个目的是提供一种减小辐射环境下电荷共享效应的 CMOS器件的 制备方法。
本发明的 CMOS器件的制备方法包括以下步骤：
1 ) 提供一个硅片作为衬底， 将其正面化学抛光为镜面， 经常规清洗工艺， 在背 面蒸铝形成铝膜作为欧姆接触， 同时在铝膜上涂上一层防酸保护层；
2) 将硅片放入氢氟酸和酒精的混合溶液中， 将衬底的背面的铝膜作为阳极， 铂 片作为阴极， 通以恒定电流进行腐蚀， 腐蚀结束后取出硅片， 进行清洗， 刻蚀掉硅片 背面的铝， 生成成硅 -多孔硅形成附加隔离区；
3 )在附加隔离区上热氧化生成一层二氧化硅， 光刻后刻蚀， 留出器件的隔离区；
4) 外延一层半导体材料， 如硅， 将其平坦化， 形成器件的有源区；
5 ) 热氧化一薄层栅介质的材料， 如二氧化硅或者高 K材料， 光刻刻蚀后形成器 件的栅介质；
6) 生长屏蔽氧化层并淀积栅的材料， 如多晶硅或金属， 光刻后形成栅图形， 刻 蚀栅材料， 形成器件的栅区；
7) 进行注入形成 LDD区；
8) 淀积栅侧墙的材料， 如二氧化硅或者氮化硅等， 各向异性刻蚀形成栅侧墙；
9) 进行源漏注入形成源区和漏区， 退火以进行杂质激活。
本发明的有益效果：
本发明的器件在隔离区的正下方设置具有多孔和悬挂键的材料，如多孔硅的附加 隔离区，由于多孔硅是一种通过电化学阳极氧化单晶硅片形成的海绵状结构的功能材 料， 多孔硅的表面层内存在大量的微孔和悬挂键。这些缺陷会在多孔硅的禁带中央形 成缺陷态， 缺陷态可俘获载流子， 导致电阻增大， 且随着腐蚀电流密度的增大， 孔隙 率增大， 多孔硅中的缺陷增多。本发明中利用多孔硅中缺陷态俘获载流子的特性可减 小重离子引起的电荷共享效应，浅沟道隔离 STI区和下方隔离区的形成只需要一次光 刻， 工艺简单， 且可以极大地提高集成电路的抗辐射性能。 附图说明
图 1表示当重离子入射到小尺寸的传统的 CMOS器件时， 传统的隔离区不能抑 制重离子辐射下的电荷共享效应的示意图； 图 2表示在传统 CMOS器件隔离区下方加入多孔硅构成的附加隔离区后， 重离 子在入射器件中电离出的电子空穴对在扩散到临近器件时，被多孔硅构成的附加隔离 区的缺陷所俘获的示意图；
图 3表示本发明的减小辐射环境下电荷共享效应的 CMOS器件的剖面图； 图 4 (a)至 （f)表示根据本发明的一个实施例的 CMOS器件的制备方法的流程 图。 具体实施方式 下面结合说明书附图详描述本发明的实施方式。
如图 2所示， 以 NMOS器件为例， 当被重离子打击后， 重离子径迹方向上会电 离出大量的电子空穴对， 空穴向衬底方向移动，一部分电子会被该被重离子入射器件 的敏感节点所收集， 另一部分电子则通过扩散作用从器件的隔离区（如 STI区）下方 扩散到周围器件的敏感节点而被收集。因此在器件隔离区下方设置多孔硅材料的附加 隔离区 3， 则可使电子或者空穴向周围器件扩散时被俘获， 减小到达周围器件敏感节 点的电子空穴数目， 从而能够有效抑制电荷共享效应的发生。
如图 3所示， 本发明的 CMOS器件包括衬底 1、 隔离区 4、 有源区 5、 栅区 6、 LDD区 7、 栅侧墙 8、 源区和漏区 9， 其中， 在隔离区的正下方设置附加隔离区 3， 该附加隔离区的材料为多孔硅。
以 MOS器件为例， 进一步阐述本发明的器件的制备方法， 具体包括以下步骤:
1 ) 提供晶向为 （100) 的 P型硅片作为衬底 1， 将其正面 a化学抛光为镜面， 经 常规清洗工艺，在背面 b蒸铝形成铝膜 2作为欧姆接触， 同时在铝膜上涂上一层防酸 保护层， 如图 4 (a) 所示；
2) 将硅片放入氢氟酸和酒精的混合溶液中， 将硅片的背面 b的铝膜作为阳极， 铂片作为阴极， 通以恒定电流 100mA/cm2， 腐蚀时间为 20~25min， 腐蚀结束后取出 硅片， 进行清洗， 刻蚀掉硅片背面的铝， 形成硅-多孔硅 3， 如图 4 (b) 所示；
3 ) 在多孔硅 3上淀积一层二氧化硅， 光刻出 STI区图形后刻蚀， 留出器件的隔 离区 4， 如图 4 (c) 所示；
4) 外延一层硅， 将其平坦化， 形成器件的有源区 5， 如图 4 (d);
5 )热氧化一薄层二氧化硅， 光刻刻蚀后形成器件的栅介质 10， 如图 4 (e)所示；
6) 生长屏蔽氧化层并沉积多晶硅， 光刻后形成栅图形， 刻蚀多晶硅， 形成器件 的栅区 6， 如图 4 (f) 所示；
7) 采用磷或者砷进行注入形成 LDD区 7， 如图 4 (g) 所示； 8) 淀积二氧化硅， 各向异性刻蚀形成栅侧墙 8， 如图 4 (h) 所示；
9)采用磷或者砷进行源漏注入形成源区和漏区 9， 退火以进行杂质激活， 如图 4 (i) 所示。
最后需要注意的是， 公布实施方式的目的在于帮助进一步理解本发明，但是本领 域的技术人员可以理解： 在不脱离本发明及所附的权利要求的精神和范围内，各种替 换和修改都是可能的。 因此， 本发明不应局限于实施例所公开的内容， 本发明要求保 护的范围以权利要求书界定的范围为准。

Claims

权 利 要 求
1. 一种减小辐射环境下电荷共享效应的 CMOS器件， 所述 CMOS器件包 括衬底 （1 )、 隔离区 （4)、 有源区 （5 )、 栅区 （6)、 LDD区 （7)、 栅侧墙 （8)、 源区和漏区（9)， 其特征在于， 在所述隔离区的正下方设置俘获载流子的附加隔 离区 （3 )。
2. 如权利要求 1所述的 CMOS器件， 其特征在于， 所述附加隔离区 （3 ) 的材料为多孔硅。
3. 一种减小辐射环境下电荷共享效应的 CMOS器件的制备方法，其特征在 于， 包括以下步骤：
1 ) 提供一个硅片作为衬底 （1)， 将其正面化学抛光为镜面， 经常规清洗工 艺， 在背面蒸铝形成铝膜作为欧姆接触， 同时在铝膜上涂上一层防酸保护层；
2)将硅片放入氢氟酸和酒精的混合溶液中， 将衬底的背面的铝膜作为阳极， 铂片作为阴极， 通以恒定电流进行腐蚀， 腐蚀结束后取出硅片， 进行清洗， 刻蚀 掉硅片背面的铝， 生成硅-多孔硅形成附加隔离区 （3) ;
3 ) 在附加隔离区上热氧化生成一层二氧化硅， 光刻后刻蚀， 留出器件的隔 离区 （4) ;
4) 外延一层半导体材料， 将其平坦化， 形成器件的有源区 （5) ;
5 ) 热氧化一薄层栅介质的材料， 光刻刻蚀后形成器件的栅介质；
6) 生长屏蔽氧化层并淀积栅的材料， 光刻后形成栅图形， 刻蚀栅材料， 形 成器件的栅区 （6) ;
7) 进行注入形成 LDD区 （7);
8) 淀积栅侧墙的材料， 各向异性刻蚀形成栅侧墙 （8) ;
9) 进行源漏注入形成源区和漏区 （9)， 退火以进行杂质激活。
4. 如权利要求 3所述的制备方法， 其特征在于， 在步骤 4) 中所述半导体 材料为硅。
5. 如权利要求 3所述的制备方法， 其特征在于， 在步骤 5 ) 中所述栅介质 的材料为二氧化硅或者高 κ材料。
6. 如权利要求 3所述的制备方法， 其特征在于， 在步骤 6) 中所述栅的材 料为多晶硅或者金属。
7. 如权利要求 3所述的制备方法， 其特征在于， 在步骤 8 ) 中所述栅侧墙 的材料为二氧化硅或者氮化硅。
8. 如权利要求 3所述的制备方法， 其特征在于， 在步骤 2) 中恒定电流为 lOOmA/cm2, 腐蚀时间为 20~25min。
PCT/CN2012/074076 2011-12-23 2012-04-16 一种减小电荷共享效应的cmos器件及其制备方法 WO2013091331A1 (zh)

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