WO2013091174A1 - 激光器、无源光网络系统、装置以及波长控制方法 - Google Patents

激光器、无源光网络系统、装置以及波长控制方法 Download PDF

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Publication number
WO2013091174A1
WO2013091174A1 PCT/CN2011/084295 CN2011084295W WO2013091174A1 WO 2013091174 A1 WO2013091174 A1 WO 2013091174A1 CN 2011084295 W CN2011084295 W CN 2011084295W WO 2013091174 A1 WO2013091174 A1 WO 2013091174A1
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Prior art keywords
layer
laser
grating
optical signal
signal
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PCT/CN2011/084295
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English (en)
French (fr)
Inventor
周小平
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华为技术有限公司
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Priority to CN2011800029907A priority Critical patent/CN102742099B/zh
Priority to PCT/CN2011/084295 priority patent/WO2013091174A1/zh
Priority to EP11877183.1A priority patent/EP2738889B1/en
Publication of WO2013091174A1 publication Critical patent/WO2013091174A1/zh
Priority to US14/308,335 priority patent/US9570885B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/548—Phase or frequency modulation
    • H04B10/556—Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK]
    • H04B10/5563—Digital frequency modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/572—Wavelength control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32333—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm based on InGaAsP

Definitions

  • the present invention relates to the field of optical fiber communication, and more particularly to a laser, a passive optical network system, a device, and a wavelength control method.
  • Optical fiber communication is the main transmission means of modern communication networks.
  • Optical fiber communication is to first transmit the transmitted information into an electrical signal at the transmitting end, and then modulate it onto the laser beam emitted by the laser, so that the intensity of the light changes with the amplitude of the electrical signal. And transmitting through the optical fiber; at the receiving end, the detector receives the optical signal and converts it into an electrical signal, and after demodulation, restores the original information.
  • Distributed Feedback The laser uses a distributed diffraction grating to produce a single-wavelength output. It has the advantages of relatively simple fabrication process and small spectral line width. It is used in Dense Wavelength Division Multiplexing (DWDM) and fiber optic connections. The network has a wide range of applications.
  • DWDM Dense Wavelength Division Multiplexing
  • the output wavelength of a DFB laser is directly related to the grating. Therefore, whether the temperature of the outside is changed or the carrier density in the laser increases, the center wavelength of the grating changes, resulting in a change in the wavelength of the laser emission.
  • a direct modulated digital signal is applied to the DFB, the injection current corresponding to the "1" signal is different from the injection current corresponding to the "0" signal, resulting in different peaks in the output spectrum after the direct modulation signal, that is, ⁇ .
  • dispersion is a fundamental characteristic of optical fibers, that is, light of different wavelengths has different propagation rates in the same fiber. Therefore, a flawed laser, due to the broadening of the pulse, causes inter-symbol interference between signals after a certain distance of transmission, which greatly limits the transmission distance.
  • a narrow band filter is added after the DFB laser, so that the filter passes through the signal required in the DFB laser, and the “0” optical signal is filtered to reduce the influence of dispersion on the signal transmission.
  • the wavelength of the optical filter cannot be ensured. Aligned with the signal wavelength of the DFB laser; and on the other hand, the spacing between the two peaks of the DFB spectrum is small, on the order of 10 GHz, which requires the passband of the optical filter to be very thin, which further increases both The difficulty of achieving precise, real-time alignment between them.
  • Embodiments of the present invention provide a laser that suppresses the effect of germanium on the laser and improves the accuracy of wavelength alignment of the laser.
  • a laser comprising: a laser region and a grating adjustment region, the laser separating the laser into a laser region and a grating adjustment region by a first electrical isolation layer; the laser region for generating an optical signal,
  • the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal;
  • the grating adjustment area is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area passes through the grating adjustment area The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • a passive optical network system comprising: an optical line terminal and a plurality of optical network units, wherein the optical line terminal is connected to the plurality of optical network units through an optical distribution network; wherein the optical network unit and/or optical The line terminal includes a laser, the laser includes: a laser region and a grating adjustment region, the laser separating the laser into a laser region and a grating adjustment region by a first electrical isolation layer;
  • the laser region is configured to generate an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal;
  • the grating adjustment area is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area passes through the grating adjustment area The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • An optical network device comprising: an optical network device comprising a laser, the laser comprising: a laser region and a grating adjustment region, the laser separating the laser into a laser region and a grating adjustment region by a first electrical isolation layer;
  • the laser region is configured to generate an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to the "0" signal and an optical signal of a wavelength corresponding to the "1"signal;
  • the grating adjustment area is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area passes through the grating adjustment area The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • a wavelength control method for a laser comprising: a laser region and a grating adjustment region, the laser separating the laser into a laser region and a grating adjustment region by a first electrical isolation layer, the method comprising:
  • the laser region generates an optical signal of a wavelength corresponding to the "0" signal and an optical signal of a wavelength corresponding to the "1" signal;
  • the grating adjustment area adjusts a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, and returns an optical signal of a wavelength corresponding to a "0" signal of the laser area to the laser area, The optical signal of the wavelength corresponding to the "1" signal of the laser region.
  • the laser provided by the embodiment of the present invention divides the laser into a laser region and a grating adjustment region by using a first electrical isolation layer, wherein the laser region is used to generate an optical signal, and the optical signal includes a wavelength corresponding to the "0" signal. And an optical signal of a wavelength corresponding to the "1" signal; the grating adjustment area is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that the laser area is "1" "The optical signal of the wavelength corresponding to the signal passes through the grating adjustment area, and the optical signal of the wavelength corresponding to the "0" signal of the laser area is returned to the laser area, thereby realizing the suppression of the directly modulated laser.
  • the device of the present invention compared with the conventional laser fabrication process, the device of the present invention has minimal variation in the original process, and the package and the test are not significantly changed, and the cost of the existing laser device is not increased.
  • 1 is a schematic structural view of a distributed feedback laser of the embodiment
  • FIG. 2 is a schematic structural view of a distributed feedback laser of the embodiment
  • FIG. 3 is a front view of the structure of the distributed feedback laser of the present embodiment
  • FIG. 4 is a schematic diagram of a passive optical network system of the feed laser of the present embodiment.
  • a laser including: a laser region 100 and a grating adjustment region 101, the laser separating the laser into a laser region 100 by a first electrical isolation layer 16 and Grating adjustment area 101.
  • the laser region 100 is configured to generate an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal.
  • the grating adjustment area 101 is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area is adjusted by the grating The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • the laser region 100 includes: a first current generating unit and a first light signal generating unit, wherein the first current generating unit comprises: a first electrode sublayer
  • a ground electrode 10 wherein the first current is generated according to a potential difference between the first electrode sub-layer 15 1 and the ground electrode 10;
  • the first optical signal generating unit includes: a first grating 13 1 disposed on the first active layer 12, located between the first electrode sub-layer 15 1 and the ground electrode 10, the first current is generated a first current generated by the unit passes through the first grating 13 1 And the first active layer 12 generates an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal.
  • the grating adjustment area includes: a second current generating unit and a first optical signal processing unit; wherein
  • the second current generating unit includes: a second electrode sub-layer 152 and a first side electrode layer and a second side electrode layer disposed on two sides of the second electrode sub-layer 152, the second electrode sub-layer 152 and The potential difference of the first side electrode layer generates a first current, and the potential difference between the second electrode sub-layer 152 and the second side electrode layer generates a second current;
  • the first optical signal processing unit includes: a second grating 132 on the second active layer 12 (the first active layer is the same as the second active layer, that is, the second active layer shares the first active layer 12), Adjusting a center wavelength of the second grating 132 by controlling a first current and a second current generated by the second current generating unit on the second grating 132 such that "1" of the laser region An optical signal of a wavelength corresponding to the signal passes through the second grating; an optical signal of a wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • the second current generating unit specifically, the voltage applied to the first side electrode layer and the voltage applied to the second side electrode layer are both smaller than the voltage applied to the second electrode sublayer, such that the second electrode A potential difference is generated between the sub-layer and the first side electrode layer, and between the second electrode sub-layer and the second side electrode layer.
  • the second current generating unit specifically, the voltage applied to the first side electrode layer and the voltage applied to the second side electrode layer are both negative, and the voltage applied to the second electrode sublayer is 0. So that a potential difference is generated between the second electrode sub-layer and the first side electrode layer and the second side electrode layer.
  • the first current signal processing unit may control the voltage of the first side electrode layer, the voltage of the second side electrode layer, and the voltage of the second electrode sublayer such that the current passes through the second grating Not entering the first active layer 12, that is, causing a current flowing through the second grating but not generating a laser, by adjusting the current passing through the second grating, so that the wavelength of the "1" signal generated by the laser region corresponds to A signal passes through the grating adjustment zone, and an optical signal of a wavelength corresponding to the "0" signal generated by the laser zone is returned to the laser zone.
  • the laser further includes: a ground electrode layer 10 located at the bottom of the laser; and a semiconductor substrate 11 and an active layer 12 sequentially disposed on the ground electrode layer, a grating layer 13, an upper cladding layer 14 and an electrode layer 15 (the electrode layer 15 includes a first electrode sub-layer 151 and a second electrode sub-layer 152), the laser further comprising a first electrical isolation layer 16, the first An electrical isolation layer 16 separates the laser into a laser region 100 and a grating adjustment region 101
  • the laser region 100 and the grating adjustment region 101 have the same grating structure and are formed on the same semiconductor substrate 1 with the same active layer 12.
  • the center wavelength of the grating adjustment region 101 is aligned with the wavelength corresponding to the "0" signal of the laser region, thereby suppressing the output light signal generated by the injection current corresponding to the "0" signal, and the injection current corresponding to the "1" signal is generated.
  • the output optical signal passes normally.
  • both the "0" signal and the "1" signal have current injection and above the threshold current.
  • the grating adjustment region In order to ensure that the wavelength of the grating adjustment region is aligned with the wavelength of the "0" signal, the grating adjustment region must also be injected with an equal density of current. In order to avoid this part of the current entering the active layer below the grating, the lasing generated is avoided to affect the filtering effect.
  • the laser provided by the embodiment of the present invention forms a laser region and a grating adjustment region by changing the structure of the laser, wherein the wavelength of the grating adjustment region is aligned with the wavelength of the “0” signal, so that the “1” signal generated by the laser region is generated.
  • the optical signal of the corresponding wavelength passes through the grating adjustment area, thereby realizing the suppression of the laser by the laser, and the transmission distance is increased.
  • the manufacturing process of the distributed feedback laser is not changed, so that the laser can achieve filtering without increasing the manufacturing process.
  • the laser may be a Distributed Feedback (DFB) laser.
  • DFB Distributed Feedback
  • the embodiment of the present invention further provides a schematic diagram of a specific structure of a laser.
  • the DFB laser is taken as an example to illustrate the structure thereof.
  • the embodiment provided by the present invention can also be applied to other types of lasers.
  • the lasers of the features of the following structures are all within the scope of protection of the embodiments of the present application, and the DFB lasers include:
  • the DFB laser includes: a ground electrode layer 20 at the bottom of the DFB laser, and a semiconductor substrate 21, an active layer 22, a grating layer 23, an upper cladding layer 24 and an electrode layer 25, and a DFB laser which are sequentially disposed on the ground electrode layer 20. Also including a first electrically isolating layer 26, the first electrically isolating layer 26 further comprising a first electrically isolating layer 26 The first electrically isolating layer separates the laser into a laser region 200 and a grating adjustment region 201.
  • the laser region 200 is configured to generate an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to the "0" signal and an optical signal of a wavelength corresponding to the "1" signal.
  • the grating adjustment area 201 is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area is adjusted by the grating The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • the laser region 200 includes: the laser region includes: a first current generating unit and a first optical signal generating unit, wherein the first current generating unit comprises: a first electrode sub-layer 251 and a ground electrode 20 The first current is generated according to a potential difference between the first electrode sub-layer 251 and the ground electrode 20.
  • the first light signal generating unit includes: a first grating 231 disposed on the first active layer 22, located between the first electrode sub-layer 251 and the ground electrode 20, and the first current generating unit generates a first current is generated by the first grating 231 and the first active layer 22, the optical signal comprising an optical signal of a wavelength corresponding to the "0" signal and a wavelength corresponding to the "1" signal Optical signal.
  • the active layer 22 is generally composed of an InGaAsP quaternary compound, and of course, other materials such as InGaAlAs may be used as needed.
  • the active layer may be a bulk material or a sub-well structure as a gain medium for the laser.
  • the first grating 231 and the second sub-grating 232 are divided by the grating layer 23 and are in the grating layer 23. Therefore, the materials of the first sub-grating 231 and the second sub-grating 232 are the same as the structure, and the grating layer 23 may be composed of an InGaAsP quaternary compound or other materials, such as InGaAlAs; it may be undoped or p-doped. .
  • the first sub-grating layer 231 is used to select a wavelength to generate a single-wavelength output; the second sub-grating layer 232 is used to suppress the ⁇ generated by the direct modulation, so that the desired light wave passes, and the filtering effect is achieved.
  • the metal electrode layer 25 is a conductive metal, and the upper cladding layer 24 is a p-type doped InP pole layer. Between the metal electrode layer 25 and the upper cladding layer 24, a heavily doped InGaAs layer is typically used to achieve ohmic contact.
  • the first electrical isolation layer 26 of this embodiment will be on the electrode layer 25 in the DFB laser.
  • the cladding layer 24 and the grating layer 23 are separated into two parts to form a laser region 200 and a grating adjustment region 201, respectively, in order to avoid mutual influence between the two.
  • the region corresponding to the first electrode sub-layer 251 becomes the laser region 200, and the region corresponding to the second electrode sub-layer 252 becomes the grating adjustment region 201.
  • the laser region 200 is used to generate a laser.
  • the wavelength control method of the laser region 200 is: current is injected from the first electrode sub-layer 251, passes through the first upper cladding layer 241, and the first sub-grating layer 231 is active. The layer 22 and the semiconductor substrate 21 reach the ground electrode 20 to cause lasing.
  • the grating adjustment region 201 is configured to align with a wavelength corresponding to a "0" signal in the laser generated by the laser region (ie, an optical signal of a wavelength corresponding to a "0" signal in the laser generated by the laser region passes through
  • the grating adjustment area 201 is described, and the optical signal of the wavelength corresponding to the "0" signal in the laser light generated by the laser area cannot pass through the grating adjustment area 201).
  • the grating adjustment area includes: a second current generating unit and a first optical signal processing unit; wherein
  • the second current generating unit includes: a second electrode sub-layer 252 and a first side electrode layer 253 and a second side electrode layer 254 disposed on two sides of the second electrode sub-layer 252, the second electrode sub-layer A potential difference between the second side electrode layer 253 and the first side electrode layer 253 generates a first current, and a potential difference between the second electrode sub-layer 252 and the second side electrode layer 254 generates a second current;
  • the first optical signal processing unit includes: disposed on the second active layer 22 (the first active layer is the same as the second active layer, that is, the second active layer shares the first a second grating 232 on the active layer), adjusting a center wavelength of the second grating 232 by controlling a first current and a second current generated by the second current generating unit on the second grating, such that The optical signal of the wavelength corresponding to the "1" signal of the laser region passes through the second grating; the optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the second grating.
  • the wavelength adjustment method of the grating adjustment region 201 is: the current injected from the second electrode sub-layer 252 by the grating adjustment region 201 passes through the second sub-grating layer 232 to adjust the wavelength of the second sub-grating layer 232 and the "0" signal. The corresponding wavelengths are aligned.
  • the second sub- The wavelength of the grating layer 232 is aligned with the wavelength corresponding to the "0" signal (ie, the optical signal of the wavelength corresponding to the "0" signal is returned to the laser region, not passing through the grating adjustment region,
  • the optical signal of the wavelength corresponding to the "1" signal passes through the grating adjustment region) and no lasing occurs. Since the first side electrode layer 253 and the second side electrode layer 254 are respectively disposed on two sides of the second electrode sub-layer 252, the first side electrode layer 253 and the second electrode sub-layer 252 are provided with a first a second electrical isolation layer 28 is disposed between the second side electrode layer 254 and the second electrode sub-layer 252, and the second electrical isolation layer 27 and the third electrical isolation layer 28 are The second upper cladding layer 242 is divided into a first side upper package 243 layer, a central upper cladding layer 244 and a second side upper cladding layer 245, so that a current current can enter the center upper cladding layer 244 from the second electrode 252, flowing through the second layer.
  • the sub-grating layer 232 region changes the wavelength of the grating and then enters the first side electrode 253 and the second side electrode 254 through the first side upper cladding layer 243 and the second side upper cladding layer 245.
  • the second upper cladding layer 242 may be directly etched through the second sub-clad layer 232, and then enter the first side through the first side upper cladding layer 243 and the second side upper cladding layer 245.
  • the electrodes 253 and the second side electrode 254, the injected current only passes through the grating region and does not enter the active layer 22 below the grating.
  • the second sub-grating layer 232 has the same structure as the first sub-grating layer 23 1 , but is applied to the first electrode sub-layer 25 1 and
  • the voltage or current on the two electrode sub-layers 252 is different such that the carrier concentrations entering the gratings of the first sub-grating layer 23 1 and the second sub-grating layer 232 are different, thus producing different center wavelengths.
  • a current above the threshold is required to be injected so that the laser can be lased normally, and the lasing wavelength coincides with the center wavelength of the first sub-grating layer 23 1 at the corresponding current density.
  • the electrode layer 25 and the second upper cladding layer 242 thereof are separated into a first side upper cladding layer 243, a center upper cladding layer 244 and a second side upper cladding layer by a second electrical isolation layer 27 and a third electrical isolation layer 28, respectively.
  • the layer 245 is provided with a first side electrode layer 253 and a second side electrode layer 254 on both sides of the second electrode sub-layer 252.
  • the first side electrode layer 253 and the second side electrode layer 254 have the same voltage and are lower than the second electrode sub-layer 252.
  • the specific light wave control method is: current flows from the second electrode sub-layer 252 through the center upper cladding layer. 244.
  • the second sub-grating layer 232 enters the first side upper cladding layer 243 and the second side upper cladding layer 245, respectively, to reach the first side electrode layer 253 and the second side electrode layer 254.
  • the current flowing through the second sub-grating layer 232 forms a sufficiently large current density for adjusting the wavelength of the second sub-grating layer 232 while limiting the current density entering the active layer 22 so that lasing does not occur.
  • the first side electrode layer 253 and the second side electrode 254 may be Each of the layers is applied with a voltage less than that applied to the second electrode sub-layer 252 such that a potential difference is generated between the second electrode sub-layer 252 and the first side electrode layer 253 and the second side electrode layer 254.
  • the amount of current of the second sub-grating layer 232 is adjusted to align the wavelength of the second sub-grating layer 232 with the wavelength corresponding to the "0" signal.
  • the first side electrode layer 253 and the second side electrode layer 254 are simultaneously set to a negative voltage, and the voltage on the second electrode sub-layer 252 is set to zero.
  • the first electrical isolation layer 15 or the second electrical isolation layer 18 or the third electrical isolation layer 19 may be air, photoresist, or aluminum oxide, but is not limited thereto. Other insulating media can also be used.
  • the distributed feedback laser provided by the embodiment of the present invention ensures that the wavelength of the grating in the optical filter is aligned with the wavelength corresponding to the “0” signal by adjusting the structure of the distributed feedback laser, but does not generate lasing itself.
  • the suppression of the ⁇ by the feedback laser is realized, and the transmission distance is increased.
  • the manufacturing process of the distributed feedback laser is not changed, so that the distributed feedback laser can achieve filtering without increasing the manufacturing process.
  • an embodiment of the present invention further provides a passive optical network system 400, including: an optical line terminal 410 and a plurality of optical network units 420, and the optical line terminal 410. Connected to the plurality of optical network units 420 through an optical distribution network 430; wherein the optical network unit 420 and/or optical line termination 410 includes a laser 440, the laser 440 comprising: a laser region and a grating adjustment region, a specific laser For the structure of 440, reference may be made to the structure of the laser described in FIG. 1 and Embodiment 1.
  • an embodiment of the present invention further provides an optical network device, which also includes the structure of the laser as described in Embodiment 1 and FIG. 1, and the structure of the laser will be further described below with reference to FIG.
  • the laser divides the laser into a laser region and a grating adjustment region by a first electrically isolating layer.
  • the laser region is configured to generate an optical signal, where the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal.
  • the grating adjustment area is configured to adjust a wavelength of the grating adjustment area by controlling a current of the grating adjustment area, so that an optical signal of a wavelength corresponding to a "1" signal of the laser area passes through the grating adjustment area The optical signal of the wavelength corresponding to the "0" signal of the laser region is returned to the laser region.
  • the laser region includes: a first current generating unit and a first optical signal generating unit, wherein the first current generating unit includes: a first electrode sublayer and a ground electrode, according to the first electrode a potential difference between the sub-layer and the ground electrode generates a first current;
  • the first optical signal generating unit includes: a first grating disposed on the first active layer, located between the first electrode sublayer and the ground electrode, and the first current generated by the first current generating unit
  • the optical signal is generated by the first grating and the first active layer, and the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal.
  • the grating adjustment area includes: a second current generating unit and a first optical signal processing unit; wherein
  • the second current generating unit includes: a second electrode sub-layer; and a first side electrode layer and a second side electrode layer disposed on two sides of the second electrode sub-layer, the second electrode sub-layer and the first a potential difference of one electrode layer generates a first current, and a potential difference between the second electrode sublayer and the second side electrode layer generates a second current;
  • the first optical signal processing unit includes: disposed on the second active layer (the first active layer is the same as the second active layer, that is, the second active layer shares the first a second grating on the active layer), adjusting a center wavelength of the second grating 232 by controlling a first current and a second current generated by the second current generating unit on the second grating, such that An optical signal of a wavelength corresponding to a "1" signal of the laser region passes through the second grating; an optical signal of a wavelength corresponding to a "0" signal of the laser region is returned to the second grating.
  • the second current generating unit specifically, the voltage applied to the first side electrode layer and the voltage applied to the second side electrode layer are both smaller than the voltage applied to the second electrode sublayer, such that the second electrode A potential difference is generated between the sub-layer and the first side electrode layer, and between the second electrode sub-layer and the second side electrode layer.
  • the second current generating unit specifically, the voltage applied to the first side electrode layer and the voltage applied to the second side electrode layer are both negative, and the voltage applied to the second electrode sublayer is 0. So that a potential difference is generated between the second electrode sub-layer and the first side electrode layer and the second side electrode layer.
  • the first current signal processing unit may control the voltage of the first side electrode layer, the voltage of the second side electrode layer, and the voltage of the second electrode sublayer such that the current passes through the second grating Not entering the first active layer, that is, causing a current flowing through the second grating but not generating a laser, and adjusting the current passing through the second grating to make the optical signal of the wavelength corresponding to the "1" signal generated by the laser region And passing through the grating adjustment area, and the optical signal of the wavelength corresponding to the “0” signal generated by the laser area is returned to the laser area.
  • a passive optical network system and an optical network device where the optical network unit or the optical line terminal in the optical network system includes a laser, and the optical network device also includes the laser. Adjusting the structure of the laser ensures that the wavelength of the grating in the laser is aligned with the wavelength corresponding to the "0" signal, that is, the optical signal of the wavelength corresponding to the "0" signal is returned, through the "1" signal.
  • the optical signal of the corresponding wavelength but does not generate lasing itself, realizes the suppression of the ⁇ by the feedback laser, and improves the transmission distance of the passive optical network system.
  • Embodiment 4 further provides a laser wavelength control method, the laser comprising: a laser region and a grating adjustment region, the laser separating the laser into a laser region and a grating adjustment region by using a first electrical isolation layer,
  • the method includes: The laser region generates an optical signal of a wavelength corresponding to a "0" signal and an optical signal of a wavelength corresponding to the "1"signal; the grating adjustment region adjusts the grating adjustment region by controlling a current of the grating adjustment region The wavelength of the optical signal of the wavelength corresponding to the "0" signal of the laser region is returned, and the optical signal of the wavelength corresponding to the "1" signal of the laser region is passed.
  • the laser wavelength control method provided by the embodiment of the invention ensures that the wavelength of the grating in the laser is aligned with the wavelength corresponding to the “0” signal by controlling the voltage applied to the laser, but the lasing is not generated by itself.
  • the feedback laser suppresses ⁇ and the transmission distance increases.
  • the manufacturing process of the distributed feedback laser is not changed, so that the laser can achieve filtering without increasing the manufacturing process.
  • the laser region includes: a first current generating unit and a first optical signal generating unit, wherein the first current generating unit includes: a first electrode sublayer and a ground electrode, according to the first electrode a potential difference between the sub-layer and the ground electrode generates a first current;
  • the first optical signal generating unit includes: a first grating disposed on the first active layer, located between the first electrode sublayer and the ground electrode, and the first current generated by the first current generating unit
  • the optical signal is generated by the first grating and the first active layer, and the optical signal includes an optical signal of a wavelength corresponding to a “0” signal and an optical signal of a wavelength corresponding to the “1” signal.
  • the grating adjustment area includes: a second current generating unit and a first optical signal processing unit; wherein
  • the second current generating unit includes: a second electrode sub-layer; and a first side electrode layer and a second side electrode layer disposed on two sides of the second electrode sub-layer, the second electrode sub-layer and the first a potential difference of one electrode layer generates a first current, and a potential difference between the second electrode sublayer and the second side electrode layer generates a second current;
  • the first optical signal processing unit includes: a second grating disposed on the second active layer, by controlling a first current and a second current generated by the second current generating unit on the second grating Adjusting a center wavelength of the second grating such that an optical signal of a wavelength corresponding to a "1" signal of the laser region passes through the second grating; a wavelength corresponding to a "0" signal of the laser region The optical signal is returned to the second grating.
  • a second current generating unit specifically, a voltage applied to the first side electrode layer and a voltage applied to the second side electrode layer are both smaller than a voltage applied to the second electrode sublayer, such that the second electrode sublayer A potential difference is generated between the first side electrode layer and the second electrode sublayer and the second side electrode layer.
  • the second current generating unit specifically, the voltage applied to the first side electrode layer and the voltage applied to the second side electrode layer are both negative, and the voltage applied to the second electrode sublayer is 0. So that a potential difference is generated between the second electrode sub-layer and the first side electrode layer and the second side electrode layer.
  • the wavelength control method of the laser ensures that the wavelength of the grating in the laser is aligned with the wavelength corresponding to the “0” signal by adjusting the structure of the laser, that is, the corresponding “0” signal.
  • the optical signal of the wavelength is returned, and the optical signal of the wavelength corresponding to the "1” signal is passed, but the lasing is not generated by itself, the suppression of the ⁇ by the feedback laser is realized, and the transmission distance of the passive optical network system is improved.

Abstract

本发明实施例提供了一种激光器、无源光网络系统、装置以及波长控制方法，其中激光器包括：激光区和光栅调节区，所述激光器通过第一电隔离层将所述激光器分隔为激光区和光栅调节区；所述激光区，用于产生光信号，所述光信号包括"0"信号所对应的波长的光信号和"1"信号所对应的波长的光信号；所述光栅调节区，用于通过控制所述光栅调节区的电流，调节所述光栅调节区的波长，使得所述激光区的"1"信号所对应的波长的光信号通过所述光栅调节区，所述激光区的"0"信号所对应的波长的光信号返回所述激光区，从而实现了对直接调制激光器啁啾的抑制。

Description

激光器、 无源光网络系统、 装置以及波长控制方法 技术领域 本发明涉及光纤通讯领域， 尤其涉及一种激光器、 无源光网络系 统、 装置以及波长控制方法。
背景技术
光纤通信是现代通信网的主要传输手段， 光纤通信是在发送端 首先要把传送的信息变成电信号， 然后调制到激光器发出的激光束 上， 使光的强度随电信号的幅度变化而变化， 并通过光纤发送出去； 在接收端， 检测器收到光信号后把它变换成电信号， 经解调后恢复 原信息。 分布反馈 （ Distributed Feedback, DFB ) 激光器采用分布衍 射光栅来产生单波长输出，具有制作工艺相对简单、 谱线宽度小等优 点 , 在密集波分复用 ( Dense Wavelength Division Multiplexing , DWDM ) 领域以及光纤接入网领域有着广泛的应用。
DFB激光器的输出波长与光栅有直接关系， 因此无论是外界温 度的改变， 还是激光器中载流子密度的增加， 都会导致光栅的中心 波长的变化， 从而导致激光发射波长的变化。 当在 DFB上施加直接 调制数字信号时， 由于 " 1 " 信号对应的注入电流与 " 0" 信号对应 的注入电流不同， 导致在直接调制信号后的输出光谱出现不同的峰 值， 即啁啾。 在光纤中， 色散是光纤的基本特性， 即不同的波长的 光， 在同一根光纤中的传播速率不同。 因此， 有啁啾的激光器， 由 于脉冲的展宽， 使得经过一定距离传输以后， 信号之间会出现码间 干扰， 极大得限制传输距离。
现有技术中， 为了抑制啁啾， 在 DFB激光器后加窄带滤波器， 使得滤波器对 DFB激光器中所需要的信号通过， " 0" 光信号进行滤 除， 从而减弱色散对信号传输的影响。 但是， 在该方案中， 由于采 用两个不同器件， 不同的材料， 且处于不同的环境中， 对温度、 湿 度、 应力等有不同的要求， 因此无法确保光滤波器的波长可以一直 与 DFB激光器的信号波长对准； 而且另一方面， DFB光谱的两个峰 值之间的间距很小， 在 10GHz量级， 这要求光滤波器的通带也非常 细， 这进一步增加了两者之间实现精密、 实时对准的难度。
发明内容
本发明的实施例提供一种激光器，抑制了啁啾对激光器的影响， 提高了激光器的波长对准的准确度。
为达到上述目 的， 本发明的实施例采用如下技术方案：
一种激光器， 所述激光器包括： 激光区和光栅调节区， 所述激 光器通过第一电隔离层将所述激光器分隔为激光区和光栅调节区； 所述激光区， 用于产生光信号， 所述光信号包括 " 0" 信号所对 应的波长的光信号和 " 1 " 信号所对应的波长的光信号；
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应的波长 的光信号通过所述光栅调节区， 所述激光区的 " 0" 信号所对应的波 长的光信号返回所述激光区。
一种无源光网络系统， 包括： 光线路终端和多个光网络单元， 所述光线路终端通过光分配网络连接到所述多个光网络单元； 其中， 所述光网络单元和 /或光线路终端包括激光器， 所述激光器包括： 激 光区和光栅调节区， 所述激光器通过第一电隔离层将所述激光器分 隔为激光区和光栅调节区；
所述激光区， 用于产生光信号， 所述光信号包括 " 0" 信号所对 应的波长的光信号和 " 1 " 信号所对应的波长的光信号；
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应的波长 的光信号通过所述光栅调节区， 所述激光区的 " 0" 信号所对应的波 长的光信号返回所述激光区。
一种光网络设备， 包括光网络设备包括激光器， 所述激光器包 括： 激光区和光栅调节区， 所述激光器通过第一电隔离层将所述激 光器分隔为激光区和光栅调节区； 所述激光区， 用于产生光信号， 所述光信号包括 "0" 信号所对 应的波长的光信号和 "1" 信号所对应的波长的光信号；
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 "1" 信号所对应的波长 的光信号通过所述光栅调节区， 所述激光区的 "0" 信号所对应的波 长的光信号返回所述激光区。
一种激光器的波长控制方法， 所述激光器包括： 激光区和光栅 调节区， 所述激光器通过第一电隔离层将所述激光器分隔为激光区 和光栅调节区， 所述方法包括：
所述激光区产生 "0" 信号所对应的波长的光信号和 "1" 信号 所对应的波长的光信号；
所述光栅调节区通过控制所述光栅调节区的电流， 调节所述光 栅调节区的波长， 返回所述激光区的 "0" 信号所对应的波长的光信 号到所述激光区， 通过所述激光区的 "1" 信号所对应的波长的光信 号。
本发明实施例提供的激光器， 通过第一电隔离层将所述激光器 分隔为激光区和光栅调节区， 所述激光区用于产生光信号， 所述光 信号包括 "0" 信号所对应的波长的光信号和 " 1" 信号所对应的波 长的光信号； 所述光栅调节区用于通过控制所述光栅调节区的电流， 调节所述光栅调节区的波长， 使得所述激光区的 "1" 信号所对应的 波长的光信号通过所述光栅调节区， 所述激光区的 "0" 信号所对应 的波长的光信号返回所述激光区， 实现了对直接调制的激光器的啁 啾抑制， 减小光纤色散的影响， 增加传输距离。 进一步的， 在本发 明实施例中， 与传统激光器制作工艺相比， 本发明器件的制作对原 有工艺环节的变动极小， 封装和测试也无明显变化， 不增加现有激 光器器件的成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下 面将对实施例或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地， 下面描述中的附图仅仅是本发明的一些实施例， 对于 本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还可以 根据这些附图获得其他的附图。
图 1 为本实施例的分布反馈激光器的结构示意图；
图 2为本实施例的分布反馈激光器的结构示意图；
图 3为本实施例的分布反馈激光器的结构示意图 1 的正视图； 图 4为本实施例的馈激光器的无源光网络系统图。
具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术 方案进行清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明 一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本 领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他 实施例， 都属于本发明保护的范围。
实施例一
如图 1所示， 在本发明实施例中， 提供了一种激光器， 包括： 激光区 100 和光栅调节区 101 , 所述激光器通过第一电隔离层 16 将所述激光器分隔为激光区 100和光栅调节区 101。
所述激光区 100 , 用于产生光信号， 所述光信号包括 " 0 " 信 号所对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
所述光栅调节区 101 , 用于通过控制所述光栅调节区的电流， 调节所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应 的波长的光信号通过所述光栅调节区， 所述激光区的 " 0" 信号所 对应的波长的光信号返回所述激光区。
进一步地， 所述激光区 100包括： 第一电流产生单元和第一光 信号产生单元， 其中， 所述第一电流产生单元包括： 第一电极子层
15 1 以及接地电极 10 ,所述根据所述第一电极子层 15 1与所述接地 电极 10的电势差产生第一电流；
所述第一光信号产生单元： 包括设置在第一有源层 12上的第 一光栅 13 1 , 位于所述第一电极子层 15 1 与所述接地电极 10中间， 所述第一电流产生单元产生的第一电流经过所述第一光栅 13 1 以 及所述第一有源层 12产生光信号， 所述光信号包括 " 0" 信号所对 应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
所述光栅调节区包括：第二电流产生单元和第一光信号处理单 元； 其中，
所述第二电流产生单元包括：第二电极子层 152 以及设置于所 述第二电极子层 152两侧的第一侧电极层和第二侧电极层，所述第 二电极子层 152与所述第一侧电极层的电势差产生第一电流，所述 第二电极子层 1 52与所述第二侧电极层的电势差产生第二电流； 所述第一光信号处理单元， 包括： 设置于第二有源层 12 (所 述第一有源层与所述第二有源层相同，即所述第二有源层共用所述 第一有源层 12 ) 上的第二光栅 132 , 通过控制经过所述第二光栅 132上的所述第二电流产生单元产生的第一电流和第二电流， 调整 所述第二光栅 132 的中心波长， 使得所述所述激光区的 " 1 " 信号 所对应的波长的光信号通过所述第二光栅； 所述激光区的 " 0 " 信 号所对应的波长的光信号返回所述激光区。
进一步地， 第二电流产生单元， 具体用于施加于所述第一侧电 极层的电压和施加于第二侧电极层的电压均小于施加于第二电极 子层电压， 使得所述第二电极子层与所述第一侧电极层， 以及所述 第二电极子层与所述第二侧电极层之间均产生电势差。
进一步地， 第二电流产生单元， 具体用于施加于所述第一侧电 极层的电压与施加于第二侧电极层的电压均为负值，施加于所述第 二电极子层电压为 0 , 以使所述第二电极子层与所述第一侧电极层 以及所述第二侧电极层之间均产生电势差。
其中，所述第一电流信号处理单元可以通过控制所述第一侧电 极层的电压、 第二侧电极层的电压以及所述第二电极子层的电压， 使得电流经过所述第二光栅后不进入第一有源层 12 , 即使得第二 光栅有电流流过但不产生激光， 通过调节经过所述第二光栅的电 流， 使得所述激光区产生的 " 1 " 信号对应的波长的光信号通过所 述光栅调节区， 而所述所述激光区产生的 " 0" 信号对应的波长的 光信号返回到所述激光区。
进一步地， 所述激光器还包括： 位于激光器底部的接地电极层 10以及依次设置在所述接地电极层上的半导体衬底 1 1、有源层 12、 光栅层 13、 上包层 14和电极层 15 (所述电极层 15 包括第一电极 子层 151 和第二电极子层 152 ) , 所述激光器还包括第一电隔离层 16 , 所述第一电隔离层 16将所述激光器分隔为激光区 100和光栅 调节区 101
激光器区域 100和光栅调节区 101 的光栅结构相同，而且在同 一个半导体衬底 1 1上制作成，有相同的有源层 12。光栅调节区 101 的中心波长与激光器区域的 " 0" 信号对应的波长对准， 从而压制 " 0" 信号对应的注入电流所产生的输出光信号， 而 " 1 " 信号对应 的注入电流所产生的输出光信号正常通过。
由于在激光器中， 无论是 " 0" 信号还是 " 1 " 信号都是有电流 注入， 而且阈值电流以上。 为了确保光栅调节区的波长与 " 0" 信号 波长对准， 因此光栅调节区也必须注入等密度的电流。 为了避免这 部分电流进入光栅以下的有源层， 避免产生的激射影响滤波效果。
本发明实施例提供的激光器， 通过对激光器结构进行变化， 形 成激光区和光栅调节区， 其中， 光栅调节区的波长与 " 0" 信号波长 对准， 使得所述激光区产生的 " 1 " 信号对应的波长的光信号通过所 述光栅调节区， 而实现了激光器对啁啾的抑制， 传输距离增大。 同 时， 又不改变分布反馈激光器的制造工艺， 使得激光器实现滤波同 时不增加制造工艺。
实施例二
进一步地， 所述激光器可以为分布反馈 （ Distributed Feedback , DFB ) 激光器。
本发明实施例还提供了一种激光器的具体结构示意图， 如图 2 所示， 以所述 DFB激光器为例具体说明其结构示意图， 本发明提供 的实施例还可以用于其它类型的激光器， 符合下述的结构的特征的 激光器均属于本申请实施例保护的范围， 所述 DFB激光器包括：
DFB激光器包括：位于 DFB激光器底部的接地电极层 20 以及 依次设置在所述接地电极层 20上的半导体衬底 21、 有源层 22、 光 栅层 23、 上包层 24 和电极层 25、 DFB 激光器还包括第一电隔离 层 26 , 所述第一电隔离层 26所述激光器还包括第一电隔离层 26 , 所述第一电隔离层将所述激光器分隔为激光区 200 和光栅调节区 201。
其中， 所述激光区 200, 用于产生光信号， 所述光信号包括 "0" 信号所对应的波长的光信号和 "1" 信号所对应的波长的光信号。
所述光栅调节区 201, 用于通过控制所述光栅调节区的电流， 调节所述光栅调节区的波长， 使得所述激光区的 "1" 信号所对应 的波长的光信号通过所述光栅调节区， 所述激光区的 "0" 信号所 对应的波长的光信号返回所述激光区。
进一步的， 所述激光区 200 包括： 所述激光区包括： 第一电流 产生单元和第一光信号产生单元， 其中， 所述第一电流产生单元包 括： 第一电极子层 251 以及接地电极 20, 所述根据所述第一电极 子层 251与所述接地电极 20的电势差产生第一电流。
所述第一光信号产生单元： 包括设置在第一有源层 22上的第 一光栅 231, 位于所述第一电极子层 251 与所述接地电极 20中间， 所述第一电流产生单元产生的第一电流经过所述第一光栅 231 以 及所述第一有源层 22产生光信号， 所述光信号包括 "0" 信号所对 应的波长的光信号和 "1" 信号所对应的波长的光信号。
其中， 有源层 22—般由 InGaAsP四元化合物构成， 当然也可以 根据需要采用别的材料， 比如 InGaAlAs。 该有源层可以是体材料， 也可以含量子阱结构， 作为激光器的增益介质。
第一光栅 231和第二子光栅 232是由光栅层 23分割而来，且光 栅层 23中。所以第一子光栅 231和第二子光栅 232材料与结构相同 , 光栅层 23可由 InGaAsP四元化合物构成， 也可以由其他材料构成， 比如 InGaAlAs; 可以是不掺杂， 也可以是 p型掺杂。 第一子光栅层 231 用于选择波长， 产生单波长输出； 第二子光栅层 232 用于抑制 直接调制产生的啁啾， 使所需光波通过， 达到滤波效果。
金属电极层 25是导电金属， 上包层 24为 p型掺杂 InP极层。 在金属电极层 25 和上包层 24 之间， 一般会有重掺杂的 InGaAs层 用于实现欧姆接触。
本实施例的第一电隔离层 26将 DFB激光器中的电极层 25、 上 包层 24及光栅层 23 隔离成两部分， 分别形成激光区 200和光栅调 节区 201, 为了避免两者之间的互相影响。 第一电极子层 251 对应 的区域成为激光区 200, 第二电极子层 252 对应的区域成为光栅调 节区 201。
具体地， 激光区 200用于产生激光， 具体的， 激光区 200的波 长控制方法为：电流从第一电极子层 251注入，经过第一上包层 241, 第一子光栅层 231, 有源层 22和半导体衬底 21, 到达接地电极 20, 从而产生激射。光栅调节区 201用于与所述激光区产生的激光中 " 0" 信号所对应的波长对准 （ 即所述所述激光区产生的激光中 "0" 信号 所对应的波长的光信号通过所述光栅调节区 201, 而所述激光区产 生的激光中 "0" 信号所对应的波长的光信号无法通过所述光栅调节 区 201 )。
所述光栅调节区包括：第二电流产生单元和第一光信号处理单 元； 其中，
所述第二电流产生单元包括：第二电极子层 252 以及设置于所 述第二电极子层 252 两侧的第一侧电极层 253 和第二侧电极层 254, 所述第二电极子层 252与所述第一侧电极层 253 的电势差产 生第一电流，所述第二电极子层 252与所述第二侧电极层 254的电 势差产生第二电流；
所述第一光信号处理单元， 包括： 设置于第二有源层 22 (所 述第一有源层与所述第二有源层相同，即所述第二有源层共用所述 第一有源层 ) 上的第二光栅 232, 通过控制经过所述第二光栅上的 所述第二电流产生单元产生的第一电流和第二电流，调整所述第二 光栅 232 的中心波长， 使得所述所述激光区的 "1" 信号所对应的 波长的光信号通过所述第二光栅； 所述激光区的 "0" 信号所对应 的波长的光信号返回所述第二光栅中。
具体的， 光栅调节区 201 波长控制方法为： 光栅调节区 201从 第二电极子层 252 注入的电流， 经过第二子光栅层 232, 调整第二 子光栅层 232的波长与 "0" 信号所对应的波长对准。
进一步的， 为了确保进入光栅调节区的电流， 能够实现第二子 光栅层 232 的波长与 " 0" 信号所对应的波长对准 （ 即 " 0 " 信号对 应的波长的光信号被返回到所述激光区， 不通过所述光栅调节区，
" 1 " 信号所对应的波长的光信号通过所述光栅调节区 ）， 且不发生 激射。 由于在所述第二电极子层 252 的两侧分别设有第一侧电极层 253 和第二侧电极层 254 , 所述第一侧电极层 253 和第二电极子层 252之间设有第二电隔离层 27 , 所述第二侧电极层 254和第二电极 子层 252之间设有第三电隔离层 28 , 所述第二电隔离层 27 与第三 电隔离层 28将所述第二上包层 242分隔为第一侧上包 243层、 中心 上包层 244和第二侧上包层 245 , 使得电流电流可以从第二电极 252 进入中心上包层 244 , 流经第二子光栅层 232 区， 改变光栅的波长， 然后通过第一侧上包层 243和第二侧上包层 245进入第一侧电极 253 和第二侧电极 254。 示例性的， 可以用刻蚀的方式， 直接刻穿第二 上包层 242 , 到达第二子光栅层 232 , 然后通过第一侧上包层 243和 第二侧上包层 245 进入第一侧电极 253 和第二侧电极 254 , 注入的 电流只经过光栅区， 而不进入光栅以下的有源层 22。 由于在第二子 电极层 252和第一侧电极层 253与第二侧电极层 254之间，形成 p-i-p 的异质结结构， 则电流可以从第二电极 252 进入中心上包层 244 , 流经第二子光栅层 232 区， 改变光栅的波长， 然后通过第一侧上包 层 243和第二侧上包层 245进入第一侧电极 253和第二侧电极 254。
如图 3 所示， 具体的， 光栅调节区 201 , 光栅调节区 201 中， 第二子光栅层 232结构与第一子光栅层 23 1 相同， 但是由于施加在 第一电极子层 25 1 和第二电极子层 252上的电压或者电流不同， 使 得进入第一子光栅层 23 1 与第二子光栅层 232光栅的载流子浓度不 同， 因此产生不同的中心波长。 对于激光区需要注入阈值以上的电 流， 使得激光器可以正常激射， 激射波长与第一子光栅层 23 1 在对 应的电流密度下的中心波长一致。 而在光栅调节区， 需要避免电流 的注入产生激射， 为了保证光栅调节区能够光正常的进行滤波工作， 因此需要特定的措施， 既可以把电流限制在光栅结构区以便改变光 栅结构区的中心波长， 但又不进入光有源层 22发生激射。 所以， 利 用第二电隔离层 27和第三电隔离层 28将电极层 25及其下面的第二 上包层 242 分别分隔成第一侧上包层 243、 中心上包层 244 和第二 侧上包层 245 , 且在第二电极子层 252 的两侧分别设有第一侧电极 层 253和第二侧电极层 254。 第一侧电极层 253和第二侧电极层 254 的电压相同， 且都比第二电极子层 252低， 具体的光波控制方法为： 电流从第二电极子层 252 依次流经中心上包层 244 , 第二子光栅层 232 , 分别进入第一侧上包层 243和第二侧上包层 245 , 到达第一侧 电极层 253 和第二侧电极层 254。 流经第二子光栅层 232 的电流， 形成足够大的电流密度用于调整第二子光栅层 232 的波长， 同时又 限制了进入有源层 22的电流密度， 使之不会发生激射。
可选的， 为了不让第二电极子层 252与芯片底部的接地电极层 20之间形成过强的电流， 产生不必要的激射， 可以向第一侧电极层 253与第二侧电极 254层均施加小于施加于第二电极子层 252电压， 以使所述第二电极子层 252与所述第一侧电极层 253 以及所述第二 侧电极层 254之间均产生电势差， 控制通过第二子光栅层 232 的电 流量， 调整第二子光栅层 232的波长与 " 0"信号所对应的波长对准。
优选的， 还可同时将第一侧电极层 253和第二侧电极层 254 电 压设置为负值， 将第二电极子层 252上的电压设置为 0。
需要说明的是， 在本发明实施例中， 第一电隔离层 15或者第二 电隔离层 1 8或者第三电隔离层 19 , 可以用空气、 光刻胶、 氧化铝， 但不仅限于此， 也可以用别的绝缘介质。
本发明实施例提供的分布反馈激光器， 通过将在分布反馈激光 器结构上进行调节， 确保了光滤波器中光栅的波长与 " 0" 信号所对 应的波长对准， 但自身又不产生激射， 实现了反馈激光器对啁啾的 抑制， 传输距离增大。 同时， 又不改变分布反馈激光器的制造工艺， 使得分布反馈激光器实现滤波同时不增加制造工艺。
实施例三
如图 4所示， 本发明实施例还提供了一种无源光网络系统 400 , 包 括： 光线路终端 410和多个光网络单元 420 , 所述光线路终端 410 通过光分配网络 430连接到所述多个光网络单元 420 ; 其中， 所述 光网络单元 420和 /或光线路终端 410包括激光器 440 ,所述激光器 440包括： 激光区和光栅调节区， 具体激光器 440的结构可以参照 图 1 以及实施例 1 所述的激光器的结构。
另外， 本发明实施例还提供了一种光网络设备， 也包括如实施 例一以及图 1所述的激光器的结构，下面结合图 1再介绍一下所述 激光器的结构。
结合图 1 , 所述激光器通过第一电隔离层将所述激光器分隔为 激光区和光栅调节区。
所述激光区， 用于产生光信号， 所述光信号包括 " 0 " 信号所 对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应的波 长的光信号通过所述光栅调节区， 所述激光区的 " 0 " 信号所对应 的波长的光信号返回所述激光区。
进一步地， 所述激光区包括： 第一电流产生单元和第一光信号 产生单元， 其中， 所述第一电流产生单元包括： 第一电极子层以及 接地电极，所述根据所述第一电极子层与所述接地电极的电势差产 生第一电流；
所述第一光信号产生单元： 包括设置在第一有源层上的第一光 栅， 位于所述第一电极子层与所述接地电极中间， 所述第一电流产 生单元产生的第一电流经过所述第一光栅以及所述第一有源层产 生光信号， 所述光信号包括 " 0"信号所对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
所述光栅调节区包括：第二电流产生单元和第一光信号处理单 元； 其中，
所述第二电流产生单元包括：第二电极子层以及设置于所述第 二电极子层两侧的第一侧电极层和第二侧电极层，所述第二电极子 层与所述第一侧电极层的电势差产生第一电流，所述第二电极子层 与所述第二侧电极层的电势差产生第二电流；
所述第一光信号处理单元， 包括： 设置于第二有源层 （所述第 一有源层与所述第二有源层相同，即所述第二有源层共用所述第一 有源层）上的第二光栅， 通过控制经过所述第二光栅上的所述第二 电流产生单元产生的第一电流和第二电流， 调整所述第二光栅 232 的中心波长， 使得所述所述激光区的 " 1 " 信号所对应的波长的光 信号通过所述第二光栅； 所述激光区的 " 0" 信号所对应的波长的 光信号返回所述第二光栅中。
进一步地， 第二电流产生单元， 具体用于施加于所述第一侧电 极层的电压和施加于第二侧电极层的电压均小于施加于第二电极 子层电压， 使得所述第二电极子层与所述第一侧电极层， 以及所述 第二电极子层与所述第二侧电极层之间均产生电势差。
进一步地， 第二电流产生单元， 具体用于施加于所述第一侧电 极层的电压与施加于第二侧电极层的电压均为负值，施加于所述第 二电极子层电压为 0 , 以使所述第二电极子层与所述第一侧电极层 以及所述第二侧电极层之间均产生电势差。
其中，所述第一电流信号处理单元可以通过控制所述第一侧电 极层的电压、 第二侧电极层的电压以及所述第二电极子层的电压， 使得电流经过所述第二光栅后不进入第一有源层，即使得第二光栅 有电流流过但不产生激光， 通过调节经过所述第二光栅的电流， 使 得所述激光区产生的 " 1 " 信号对应的波长的光信号通过所述光栅 调节区， 而所述所述激光区产生的 " 0 " 信号对应的波长的光信号 返回到所述激光区。
本发明实施例提供的无源光网络系统以及光网络设备， 其中所 述光网络系统中的光网络单元或者光线路终端包括一种激光器， 所 述光网络设备中也包括所述的激光器， 通过对激光器结构上进行调 节， 确保了激光器中光栅的波长与 " 0" 信号所对应的波长对准， 即使得 " 0" 信号所对应的波长的光信号被返回， 通过所述 " 1 " 信 号所对应的波长的光信号， 但自身又不产生激射， 实现了反馈激光 器对啁啾的抑制， 提高了无源光网络系统传输距离。
实施例四 本实施例还提供了一种激光器波长控制方法， 所述激光器包 括： 激光区和光栅调节区， 所述激光器通过第一电隔离层将所述激 光器分隔为激光区和光栅调节区， 所述方法包括： 所述激光区产生 " 0" 信号所对应的波长的光信号和 " 1 " 信号 所对应的波长的光信号； 所述光栅调节区通过控制所述光栅调节区的电流，调节所述光 栅调节区的波长， 返回所述激光区的 " 0" 信号所对应的波长的光 信号， 通过所述激光区的 " 1 " 信号所对应的波长的光信号。
本发明实施例提供的激光器波长控制方法， 通过对激光器上施 加电压的控制， 确保了激光器中光栅的波长与与 " 0" 信号所对应的 波长对准， 但自身又不产生激射， 实现了反馈激光器对啁啾的抑制， 传输距离增大。 同时， 又不改变分布反馈激光器的制造工艺， 使得 激光器实现滤波同时不增加制造工艺。
进一步地， 所述激光区包括： 第一电流产生单元和第一光信号 产生单元， 其中， 所述第一电流产生单元包括： 第一电极子层以及 接地电极，所述根据所述第一电极子层与所述接地电极的电势差产 生第一电流；
所述第一光信号产生单元： 包括设置在第一有源层上的第一光 栅， 位于所述第一电极子层与所述接地电极中间， 所述第一电流产 生单元产生的第一电流经过所述第一光栅以及所述第一有源层产 生光信号， 所述光信号包括 " 0"信号所对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
所述光栅调节区包括：第二电流产生单元和第一光信号处理单 元； 其中，
所述第二电流产生单元包括：第二电极子层以及设置于所述第 二电极子层两侧的第一侧电极层和第二侧电极层，所述第二电极子 层与所述第一侧电极层的电势差产生第一电流，所述第二电极子层 与所述第二侧电极层的电势差产生第二电流；
所述第一光信号处理单元， 包括： 设置于第二有源层上的第二 光栅，通过控制经过所述第二光栅上的所述第二电流产生单元产生 的第一电流和第二电流， 调整所述第二光栅的中心波长， 使得所述 所述激光区的 " 1 " 信号所对应的波长的光信号通过所述第二光栅； 所述激光区的 " 0" 信号所对应的波长的光信号返回所述第二光栅 中。 第二电流产生单元，具体用于施加于所述第一侧电极层的电压 和施加于第二侧电极层的电压均小于施加于第二电极子层电压，使 得所述第二电极子层与所述第一侧电极层， 以及所述第二电极子层 与所述第二侧电极层之间均产生电势差。
进一步地， 第二电流产生单元， 具体用于施加于所述第一侧电 极层的电压与施加于第二侧电极层的电压均为负值，施加于所述第 二电极子层电压为 0 , 以使所述第二电极子层与所述第一侧电极层 以及所述第二侧电极层之间均产生电势差。
本发明实施例提供的一种激光器的波长控制方法， 通过对激光 器结构上进行调节， 确保了激光器中光栅的波长与 " 0 " 信号所对 应的波长对准， 即使得 " 0 " 信号所对应的波长的光信号被返回， 通 过所述 " 1 " 信号所对应的波长的光信号， 但自身又不产生激射， 实 现了反馈激光器对啁啾的抑制， 提高了无源光网络系统传输距离。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围 并不局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技 术范围内， 可轻易想到变化或替换， 都应涵盖在本发明的保护范围 之内。 因此， 本发明的保护范围应所述以权利要求的保护范围为准。

Claims

权 利 要 求 书
1、 一种激光器， 其特征在于， 所述激光器包括： 激光区和光栅 调节区， 所述激光器通过第一电隔离层将所述激光器分隔为激光区 和光栅调节区； 所述激光区， 用于产生光信号， 所述光信号包括 " 0" 信号所对 应的波长的光信号和 " 1 " 信号所对应的波长的光信号；
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应的波长 的光信号通过所述光栅调节区， 所述激光区的 " 0" 信号所对应的波 长的光信号返回所述激光区。
2、 根据所述权利要求 1所述的激光器， 其特征在于， 所述激光 区包括： 第一电流产生单元和第一光信号产生单元， 其中， 所述第 一电流产生单元包括： 第一电极子层以及接地电极， 根据所述第一 电极子层与所述接地电极的电势差产生第一电流； 所述第一光信号产生单元： 包括设置在第一有源层上的第一光 栅， 位于所述第一电极子层与所述接地电极中间， 所述第一电流产 生单元产生的第一电流经过所述第一光栅以及所述第一有源层产生 光信号， 所述光信号包括 " 0" 信号所对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
3、 根据所述权利要求 1所述的激光器， 其特征在于， 所述光栅 调节区包括： 第二电流产生单元和第一光信号处理单元； 其中， 所述第二电流产生单元包括： 第二电极子层以及设置于所述第 二电极子层两侧的第一侧电极层和第二侧电极层， 所述第二电极子 层与所述第一侧电极层的电势差产生第一电流， 所述第二电极子层 与所述第二侧电极层的电势差产生第二电流；
所述第一光信号处理单元， 包括： 设置于第二有源层上的第二 光栅， 通过控制经过所述第二光栅上的所述第二电流产生单元产生 的第一电流和第二电流， 调整所述第二光栅的中心波长， 使得所述 激光区的 " 1 " 信号所对应的波长的光信号通过所述第二光栅； 所述 激光区的 " 0" 信号所对应的波长的光信号返回所述激光区。
4、 根据所述权利要求 3所述的激光器， 其特征在于， 第二电流 产生单元， 具体用于施加于所述第一侧电极层的电压和施加于第二 侧电极层的电压均小于施加于第二电极子层电压， 使得所述第二电 极子层与所述第一侧电极层， 以及所述第二电极子层与所述第二侧 电极层之间均产生电势差。
5、 根据所述权利要求 3所述的激光器， 其特征在于， 第二电流 产生单元， 具体用于施加于所述第一侧电极层的电压与施加于第二 侧电极层的电压均为负值， 施加于所述第二电极子层电压为 0 , 以 使所述第二电极子层与所述第一侧电极层以及所述第二侧电极层之 间均产生电势差。
6、 一种无源光网络系统， 其特征在于， 包括： 光线路终端和多 个光网络单元， 所述光线路终端通过光分配网络连接到所述多个光 网络单元； 其中， 所述光网络单元和 /或光线路终端包括激光器， 所 述激光器包括： 激光区和光栅调节区， 所述激光器通过第一电隔离 层将所述激光器分隔为激光区和光栅调节区；
所述激光区， 用于产生光信号， 所述光信号包括 " 0" 信号所对 应的波长的光信号和 " 1 " 信号所对应的波长的光信号；
所述光栅调节区， 用于通过控制所述光栅调节区的电流， 调节 所述光栅调节区的波长， 使得所述激光区的 " 1 " 信号所对应的波长 的光信号通过所述光栅调节区， 所述激光区的 " 0" 信号所对应的波 长的光信号返回所述激光区。
7、 根据权利要求 6所述的无源光网络系统， 其特征在于， 所述 激光区包括： 第一电流产生单元和第一光信号产生单元， 其中， 所 述第一电流产生单元包括： 第一电极子层以及接地电极， 所述根据 所述第一电极子层与所述接地电极的电势差产生第一电流； 所述第一光信号产生单元： 包括设置在第一有源层上的第一光 栅， 位于所述第一电极子层与所述接地电极中间， 所述第一电流产 生单元产生的第一电流经过所述第一光栅以及所述第一有源层产生 光信号， 所述光信号包括 " 0" 信号所对应的波长的光信号和 " 1 " 信号所对应的波长的光信号。
8、 根据权利要求 6所述的无源光网络系统， 其特征在于， 所述 光栅调节区包括： 第二电流产生单元和第一光信号处理单元； 其中， 所述第二电流产生单元包括： 第二电极子层以及设置于所述第 二电极子层两侧的第一侧电极层和第二侧电极层， 所述第二电极子 层与所述第一侧电极层的电势差产生第一电流， 所述第二电极子层 与所述第二侧电极层的电势差产生第二电流；
所述第一光信号处理单元， 包括： 设置于第二有源层上的第二 光栅， 通过控制经过所述第二光栅上的所述第二电流产生单元产生 的第一电流和第二电流， 调整所述第二光栅的中心波长， 使得所述 所述激光区的 " 1 " 信号所对应的波长的光信号通过所述第二光栅； 所述激光区的 " 0" 信号所对应的波长的光信号返回所述激光器中。
9、 根据权利要求 8所述的无源光网络系统， 其特征在于， 第二 电流产生单元， 具体用于施加于所述第一侧电极层的电压和施加于 第二侧电极层的电压均小于施加于第二电极子层电压， 使得所述第 二电极子层与所述第一侧电极层， 以及所述第二电极子层与所述第 二侧电极层之间均产生电势差。
10、 根据权利要求 8所述的无源光网络系统， 其特征在于， 第 二电流产生单元， 具体用于施加于所述第一侧电极层的电压与施加 于第二侧电极层的电压均为负值， 施加于所述第二电极子层电压为 0 ,以使所述第二电极子层与所述第一侧电极层以及所述第二侧电极 层之间均产生电势差。
1 1、 一种光网络设备， 其特征在于， 包括如权利要求 1 至 5 中 任一项所述的激光器。
12、 一种激光器的波长控制方法， 其特征在于， 所述激光器包 括： 激光区和光栅调节区， 所述激光器通过第一电隔离层将所述激 光器分隔为激光区和光栅调节区， 所述方法包括：
所述激光区产生 " 0" 信号所对应的波长的光信号和 " 1 " 信号 所对应的波长的光信号； 所述光栅调节区通过控制所述光栅调节区的电流， 调节所述光 栅调节区的波长， 返回所述激光区的 "0" 信号所对应的波长的光信 号， 通过所述激光区的 "1" 信号所对应的波长的光信号。
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CN102742099B (zh) 2013-12-18
CN102742099A (zh) 2012-10-17
EP2738889A1 (en) 2014-06-04
US20160204577A1 (en) 2016-07-14
EP2738889B1 (en) 2016-08-10
US9570885B2 (en) 2017-02-14

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