WO2013067953A1 - 一种半导体变压结构和具有其的芯片 - Google Patents

一种半导体变压结构和具有其的芯片 Download PDF

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Publication number
WO2013067953A1
WO2013067953A1 PCT/CN2012/084322 CN2012084322W WO2013067953A1 WO 2013067953 A1 WO2013067953 A1 WO 2013067953A1 CN 2012084322 W CN2012084322 W CN 2012084322W WO 2013067953 A1 WO2013067953 A1 WO 2013067953A1
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Prior art keywords
semiconductor
layer
electro
photoelectric conversion
isolation layer
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PCT/CN2012/084322
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English (en)
French (fr)
Inventor
郭磊
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Guo Lei
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Publication of WO2013067953A1 publication Critical patent/WO2013067953A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Definitions

  • a photoelectric transformer which generally comprises an electro-optical conversion module composed of LEDs and a photoelectric conversion module composed of photovoltaic cells, using photoelectric-electro-optic
  • the energy conversion process is used to achieve the purpose of pressure transformation.
  • the electro-optical conversion module and the photoelectric conversion module are usually electrically isolated by an isolation layer of a transparent insulating material.
  • An object of the present invention is to solve at least one of the above technical drawbacks, and to provide a semiconductor transformer structure based on reverse bias PN junction structure isolation and a chip having the same.
  • the present invention provides a semiconductor transformer structure comprising: one or more semiconductor electro-optical conversion structures, the semiconductor electro-optical conversion structure comprising an electro-optical conversion layer, the electro-optical conversion layer for converting input electrical energy into light energy; and a plurality of semiconductor photoelectric conversion structures including a photoelectric conversion layer for converting the light energy into output electrical energy, wherein an absorption spectrum of the photoelectric conversion layer and the electro-optical conversion The spectral matching between the emission spectra of the layers, wherein the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure are isolated by a reverse bias PN junction structure.
  • the semiconductor electro-optic conversion structure and the semiconductor photoelectric conversion structure are plural and connected in series, and the number of the semiconductor photoelectric conversion structures is proportional to the number of the semiconductor electro-optical conversion structures.
  • the method further includes: an isolation layer, the isolation layer is a semiconductor, and the isolation layer is of a first doping type, wherein the semiconductor electro-optical conversion structure is formed on one side of the isolation layer
  • the semiconductor photoelectric conversion structure is formed on the other side of the isolation layer, the isolation layer is transparent to the emitted light of the electro-optical conversion layer, wherein the isolation layer and the semiconductor electro-optic conversion structure and the Isolation layer and said semiconductor photoelectric conversion
  • the method further includes: an isolation layer, the isolation layer is a semiconductor, and the isolation layer is of a first doping type, wherein the semiconductor electro-optical conversion structure is formed on one side of the isolation layer
  • the semiconductor photoelectric conversion structure is formed on the other side of the isolation layer, and the emission light of the electro-optical conversion layer of the isolation layer is transparent
  • the semiconductor electro-optical conversion structure includes a first semiconductor doped layer, and the electro-optic a conversion layer and a second semiconductor doped layer, the second semiconductor doped layer is in contact with the isolation layer, and the first semiconductor doped layer is of a first doping type, and the second semiconductor doped layer is a second doping type, the isolation layer and the PN junction formed by the second semiconductor doped layer are in a reverse bias state
  • the semiconductor photoelectric conversion structure includes a third semiconductor doped layer, the photoelectric conversion layer, and a fourth semiconductor doped layer, the fourth semiconductor doped layer is in contact with the isolation layer, and the third semiconductor doped layer is of
  • the method further includes: an isolation layer, wherein the isolation layer is a semiconductor, wherein the semiconductor electro-optical conversion structure is formed on one side of the isolation layer, and the semiconductor photoelectric conversion structure is formed in the isolation The other side of the layer, the emission light of the electro-optic conversion layer of the isolation layer is transparent, wherein the isolation layer has a plurality of semiconductor doped layers, and at least two of the plurality of semiconductor doped layers are adjacent The doping layers of the semiconductor doping layer are reversed to form at least two sets of PN junctions, wherein the PN junctions are in a reverse biased state.
  • the method further includes: a substrate layer, the substrate layer is a semiconductor, and the substrate layer is of a first doping type, wherein the semiconductor photoelectric conversion structure and the semiconductor electro-optical conversion structure are formed On the same side of the substrate layer, the substrate layer is transparent to the emitted light of the electro-optical conversion layer, and the bottom of the substrate layer has a light-reflecting structure, wherein the substrate layer and the semiconductor electro-optical conversion structure are between A doping region of a second doping type is formed between the substrate layer and the semiconductor photoelectric conversion structure, and the PN junction formed by the substrate layer and the doped region is in a reverse bias state.
  • the refractive indices of the layers of material on the light propagation path match.
  • the method further includes: an optical trap for confining emission light of the electro-optic conversion layer inside the semiconductor transformer structure to prevent energy loss caused by light leakage.
  • the material of the electro-optic conversion layer is: AlGalnP, GaN, InGaN, InGaN, AlGalnN, ZnO, AlGalnAs, GaAs, InGaAs, InGaAsP, AlGaAs, AlGalnSb, InGaAsNSb and other Group III nitrogen compounds , Group III arsenic or phosphorus based compound semiconductor materials and combinations thereof, organic light emitting materials or quantum dot luminescent materials.
  • the material of the photoelectric conversion layer is: AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other III -V family direct band gap semiconductor materials and combinations thereof, organic photovoltaic materials or quantum dot photovoltaic materials.
  • the material of the isolation layer or the substrate layer comprises GaP, GaAs, InP, GaN, Si, Ge, GaSb and other semiconductor materials that are transparent to working light and combinations thereof.
  • the semiconductor transformer structure is implemented by a double-sided epitaxial or single-sided epitaxial process.
  • the semiconductor transformer structure of the embodiment of the present invention by changing the number of semiconductor photoelectric conversion structures and the number of the semiconductor electro-optical conversion structures, different transformation ratios are realized, and at the same time, a method of setting a reverse bias PN junction structure in a semiconductor is employed.
  • the isolation layer has a wider selection of materials, and has the advantages of being easy to obtain, low in cost, and superior in index matching.
  • the isolation layer of the semiconductor transformer structure of the present invention can form a crystal structure by epitaxy, other semiconductor structures can be further extended thereon, thereby avoiding complicated processes such as peeling and bonding, thereby further reducing production cost and enabling Large-scale manufacturing is possible.
  • the present invention also provides a chip comprising any of the above-described semiconductor transformer structures for converting an input voltage of an external power source to a specific operating voltage required for other components on the chip on a chip. .
  • the chip according to the embodiment of the present invention can be formed by epitaxy because of its internal semiconductor transformer structure, so that it can be easily integrated with other components, has mature process, low cost, and can realize monolithic integration. advantage.
  • FIG. 1 is a working principle diagram of a semiconductor transformer structure according to the present invention.
  • FIG. 2 is a schematic structural view of a semiconductor transformer structure according to a first embodiment of the present invention
  • FIG. 3 is a schematic structural view of a semiconductor transformer structure according to a second embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a semiconductor transformer structure according to a third embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a semiconductor transformer structure according to a fourth embodiment of the present invention.
  • FIG. 6 is a schematic structural view of a semiconductor transformer structure according to a fifth embodiment of the present invention.
  • FIG. 7 is a schematic structural view of a semiconductor transformer structure according to a sixth embodiment of the present invention.
  • FIG. 8 is a schematic structural view of a semiconductor transformer structure according to a seventh embodiment of the present invention.
  • FIG. 9 is a flow chart of forming a semiconductor transformer structure of the present invention by a double-sided epitaxial process
  • FIG. 10 is a flow chart of forming a semiconductor transformer structure of the present invention by a single-sided epitaxial process
  • Figure 11 is a schematic view showing the structure of a chip having a semiconductor transformer structure according to the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, Like numbers refer to the same or similar elements or elements that have the same or similar functions.
  • the embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
  • the following disclosure provides many different embodiments or examples for implementing different structures of the present invention.
  • the components and arrangements of the specific examples are described below. Of course, they are merely examples and are not intended to limit the invention.
  • the present invention may repeat reference numerals and/or letters in different examples. This repetition is for the purpose of clarity and clarity and does not in itself indicate the relationship between the various embodiments and/or arrangements discussed.
  • the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the applicability of other processes and/or the use of other materials.
  • the structure of the first feature described below "on" the second feature may include embodiments in which the first and second features are formed in direct contact, and may include additional features formed between the first and second features. The embodiment, such that the first and second features may not be in direct contact.
  • the traditional AC transformer uses the principle of electromagnetic induction.
  • the free electron oscillation in the conductor generates electromagnetic waves as energy transfer.
  • the energy is transmitted through the coupling between the primary and secondary turns, thereby realizing the AC voltage conversion.
  • the semiconductor transformer structure in the present invention follows the principle of quantum mechanics, and photons are generated by transitions of carriers in different energy levels in the semiconductor material, photons are used as energy transmission shields, and excitation is generated in another semiconductor material. Streams, thereby achieving voltage conversion. Therefore, the characteristics of the particle (photon) characteristic instead of the wave (electromagnetic wave) are the basic working principle in the DC transformer of the present invention due to the difference in the transmission energy shield.
  • the overall energy conversion efficiency of the semiconductor transformer structure in the present invention is mainly determined by three factors: electro-optic energy conversion efficiency, photoelectric energy conversion efficiency, and optical energy loss. Due to the development of LED and photovoltaic cell technology, the electro-optical conversion efficiency and photoelectric conversion efficiency of advanced semiconductor devices have reached a very high level. For example, the internal quantum efficiency of red LEDs prepared by AlGalnP materials is close to 100%, GaN material preparation. The internal quantum efficiency of the blue LED has also reached 80%, and the internal quantum efficiency of the III-V photovoltaic cell is also close to 100%, so the optical energy loss becomes the main factor limiting the energy conversion efficiency of the DC transformer of the present invention.
  • the frequency matching between the electro-optical conversion structure and the photoelectric conversion structure absorbs the optical language to reduce the photon non-absorption loss and Heat loss
  • the refractive index of each material on the light propagation path is matched to reduce the total reflection critical angle loss and Fresnel loss
  • the light trap to reduce the energy loss caused by light leakage.
  • the invention provides a semiconductor transformer structure, the working principle of which is shown in FIG. 1 : a DC voltage V L is input to each semiconductor electro-optical conversion structure at the input end to inject a carrier recombination in the semiconductor electro-optical conversion structure to generate photons, photons.
  • the semiconductor photoelectric conversion structure is transmitted to generate different carriers in the semiconductor photoelectric conversion structure, and is separated by a built-in electric field, and a DC voltage V 2 is outputted on each of the semiconductor photoelectric conversion structures, thereby realizing energy transmission by using the optical waves.
  • V 2 depends on the material characteristics of the semiconductor electro-optic conversion structure and the semiconductor photoelectric conversion structure, such as material type, strain characteristics, band gap, doping concentration, etc., so that the energy conversion efficiency is optimized by adjusting the corresponding characteristic parameters.
  • the electro-optical conversion structure and the photoelectric conversion are utilized.
  • the number of replacement structures is greater than the realization of the transformation. For example, assuming that the number of semiconductor electro-optical conversion structures is m and the number of semiconductor photoelectric conversion structures is n, the total output voltage/input total voltage is VV/n ⁇ V ⁇ .
  • a plurality of semiconductor electro-optical conversion structures are connected in series.
  • the semiconductor photoelectric conversion structure is described as an example, but the parallel connection of the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure, or series-parallel connection, etc., can also be realized, and details are not described herein again.
  • the semiconductor electro-optical conversion structure may be a light emitting diode (LED), a resonant light emitting diode (RC_LED) or a laser diode (LD).
  • LEDs can effectively convert electrical energy into light energy, work performance is stable and reliable, and the thermal effect is less, and RC_LED further has the advantages of good directionality and high modulation speed.
  • LD further has good monochromaticity and brightness. High advantage.
  • the semiconductor electro-optic conversion structure comprises an electro-optical conversion layer, and the material thereof may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAs, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III arsenic-based or phosphorus-based compound semiconductor materials, and combinations thereof, organic light-emitting materials or quantum dot luminescent materials.
  • the material thereof may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAs, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III
  • the semiconductor photoelectric conversion structure may be a photovoltaic cell having a single-sided extraction electrode structure of a back contact or a buried contact.
  • a photovoltaic cell having a single-sided extraction electrode structure with back contact or buried contact can avoid the influence of electrode shading on the light-receiving surface, so the energy conversion efficiency is higher.
  • the semiconductor photoelectric conversion structure includes a photoelectric conversion layer, and the materials thereof may be AlGaInP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, and other III-V families directly banned With semiconductor materials and combinations thereof, organic photovoltaic materials or quantum dot photovoltaic materials.
  • the spectrum between the absorption spectrum of the photoelectric conversion layer and the emission spectrum of the electro-optical conversion layer is matched, that is, the light emitted by the electro-optic conversion layer is matched with the light characteristic optimized by the photoelectric conversion efficiency of the photoelectric conversion layer, so that The electro-optical-to-electric energy conversion efficiency of the device is high, and the photon energy loss during conversion is less.
  • the emitted light of the electro-optic conversion layer may be monochromatic light corresponding to the maximum absorption efficiency of the photoelectric conversion layer, or may be a specific frequency of other frequencies, which may cause a photovoltaic effect of the photoelectric conversion layer to have a quantum efficiency greater than 1.
  • the photon energy emitted by the electro-optic conversion layer ensures that photons can be absorbed by the photoelectric conversion layer without excessive energy loss due to excessive photon energy, a possible ideal situation. It is the forbidden band width of the electro-optical conversion layer and the active material of the photoelectric conversion layer, so as to ensure the absorption of light without causing loss of residual photon energy.
  • the monochromatic light has a certain spectral width, for example, a red LED has a spectral width of about 20 nm, instead of defining a specific frequency point, which is a well-known technique. , will not repeat them here.
  • the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure are separated by a reverse bias PN junction structure, wherein the material for isolation needs to be transparent to the working light.
  • the so-called transparency means that the forbidden band width of the material is larger than the energy of the photon, which can ensure that the energy band transition is not caused, resulting in loss of photons as an energy carrier.
  • the specific form of electrical isolation according to the reverse bias PN junction structure can be subdivided into multiple cases.
  • half The conductive electro-optical conversion structure may be one, and the semiconductor photoelectric conversion structure may be plural; in another embodiment of the present invention, the semiconductor electro-optical conversion structure may be plural, and the semiconductor photoelectric conversion structure may be one; In the embodiment, the semiconductor electro-optic conversion structure and the semiconductor photoelectric conversion structure may be plural.
  • a plurality of semiconductor electro-optic conversion structures and semiconductor photoelectric conversion structures will be described as an example, but the following embodiments are merely illustrative and are not intended to limit the invention.
  • FIG. 2 is a schematic view showing the structure of a semiconductor transformer structure according to a first embodiment of the present invention.
  • the semiconductor transformer structure includes a plurality of semiconductor electro-optical conversion structures 1 connected in series, a plurality of semiconductor conversion structures 2 and a spacer 3 in series.
  • a plurality of semiconductor electro-optical conversion structures 1 are formed on the side of the isolation layer 3, and each of the semiconductor electro-optical conversion structures 1 includes an electro-optical conversion layer 12 (not shown in the electro-optical conversion layer 12), and a plurality of semiconductor photoelectric conversion structures 2
  • the other side of the isolation layer 3 is formed, and each of the semiconductor photoelectric conversion structures 2 includes a photoelectric conversion layer 22 (the photoelectric conversion layer 22 is not shown in the drawing).
  • the isolating layer 3 is transparent to the emitted light emitted from the electro-optical conversion layer 12, so that the light carrying the energy can be transmitted from the semiconductor electro-optical conversion structure 1 to the semiconductor photoelectric conversion structure 2, thereby realizing energy transmission and finally realizing voltage conversion.
  • the material of the isolation layer 3 may be GaP, GaAs, InP, GaN, Si, Ge, GaSb and other semiconductor materials transparent to working light, and combinations thereof, and is of a first doping type.
  • the PN junction is in a reverse biased state.
  • the isolation layer 3 is P-type doped and the doped region 31 is N-type doped
  • a low potential can be applied to the isolation layer 3 to apply a high potential to the doped region 31.
  • a high potential can be applied to the isolation layer 3 and a low potential can be applied to the doped region 31.
  • the PN junction structure between the plurality of semiconductor electro-optic conversion structures 1 and the plurality of semiconductor photoelectric conversion structures 2 are reversely biased, carriers cannot pass, and no conduction current is provided, and electrical isolation can be realized, and the input end and the output end are made. Do not affect each other.
  • FIG. 3 is a schematic view showing the structure of a semiconductor transformer structure according to a second embodiment of the present invention.
  • the semiconductor transformer structure includes a plurality of semiconductor electro-optical conversion structures 1 connected in series, a plurality of semiconductor photoelectric conversion structures 2 connected in series, and an isolation layer 3. Among them, a plurality of semiconductor electro-optical conversion structures 1 are formed on the side of the isolation layer 3, and a plurality of semiconductor photoelectric conversion structures 2 are formed on the other side of the isolation layer 3.
  • the isolation layer 3 is transparent to the emitted light emitted by the electro-optic conversion layer 12.
  • the material of the isolation layer 3 may be GaP, GaAs, InP, GaN, Si, Ge, GaSb, and other semiconductor materials transparent to the working light, and combinations thereof. A type of doping.
  • the semiconductor photoelectric conversion structure 1 includes a first semiconductor doped layer 1 1 , an electro-optical conversion layer 12 , and a second semiconductor doped layer 13 , wherein the second semiconductor doped layer 13 is in contact with the isolation layer 3 , and the first semiconductor doped layer 1 1 is a first doping type, the second semiconductor doping layer 13 is of a second doping type, and the PN junction formed by the isolation layer 3 and the second semiconductor doping layer 13 is in a reverse bias state.
  • the semiconductor electro-optic conversion structure 2 includes a third semiconductor doping layer 21, a photoelectric conversion layer 22, and a fourth semiconductor doping layer 23.
  • the fourth semiconductor doping layer 23 is in contact with the isolation layer 3, and the third semiconductor doping layer 21 is The first doping type, the fourth semiconductor doping layer 23 is of a second doping type, and the PN junction formed by the isolation layer 3 and the fourth semiconductor doping layer 23 is in a reverse bias state. Similar to the first embodiment described above, the plurality of semiconductor electro-optical conversion structures 1 of the present embodiment and the plurality of semiconductor photoelectric conversion structures 2 have a reverse bias PN junction structure, which can achieve electrical isolation, the input end and the output end. Do not affect each other.
  • FIG. 4 is a schematic view showing the structure of a semiconductor transformer structure according to a third embodiment of the present invention.
  • the semiconductor transformer structure includes a plurality of semiconductor electro-optical conversion structures 1 connected in series, a plurality of semiconductor electro-transformation structures 2 connected in series, and an isolation layer 3.
  • a plurality of semiconductor electro-optical conversion structures 1 are formed on the side of the isolation layer 3, and each of the semiconductor electro-optical conversion structures 1 includes an electro-optical conversion layer 12 (not shown in the electro-optical conversion layer 12), and a plurality of semiconductor photoelectric conversion structures 2
  • the other side of the isolation layer 3 is formed, and each of the semiconductor photoelectric conversion structures 2 includes a photoelectric conversion layer 22 (the photoelectric conversion layer 22 is not shown in the drawing).
  • the isolating layer 3 is transparent to the emitted light emitted from the electro-optical conversion layer 12, so that the light carrying the energy can be transmitted from the semiconductor electro-optical conversion structure 1 to the semiconductor photoelectric conversion structure 2, thereby realizing energy transmission and finally realizing voltage conversion.
  • the material of the isolation layer 3 may be GaP, GaAs, InP, GaN, Si, Ge, GaSb and other semiconductor materials transparent to working light and combinations thereof.
  • the spacer layer 3 has a plurality of semiconductor doped layers.
  • the isolation layer 3 includes a first semiconductor doping layer 3a, a second semiconductor doping layer 3b, and a third semiconductor doping layer 3c, wherein the doping type of the first semiconductor doping layer 3a and the second semiconductor doping layer 3b In contrast, the doping types of the second semiconductor doping layer 3b and the third semiconductor doping layer 3c are opposite.
  • the first PN junction having the 3a-3b interface and the second PN junction of the 3b-3c interface between the plurality of semiconductor electro-optical conversion structures 1 and the plurality of semiconductor photoelectric conversion structures 2, the first PN junction and the second PN junction All are reverse biased, that is, electrical isolation can be achieved, so that the input end and the output end do not affect each other.
  • the isolation layer 3 may include more layers of semiconductor doped layer structures, and only at least two sets of adjacent semiconductor doping layers do not have opposite doping types to form at least two sets of PN junctions, so that the PN junctions are In the reverse bias state, electrical isolation can be achieved, so that the input and output terminals do not affect each other.
  • the semiconductor electro-optical conversion structure 1 may be located above the isolation layer 3, and the semiconductor photoelectric conversion structure 2 may be located under the isolation layer 3, or The semiconductor electro-optic conversion structure 1 is placed under the isolation layer 3, and the semiconductor photoelectric conversion structure 2 is placed on the isolation layer 3. This change in relative position does not affect the operation of the semiconductor transformation structure.
  • Fig. 5 is a view showing the structure of a semiconductor transformer structure according to a fourth embodiment of the present invention.
  • the semiconductor transformer structure includes a plurality of semiconductor electro-optical conversion structures 1 connected in series, a plurality of semiconductor photoelectric conversion structures 2 connected in series, and a substrate layer 3.
  • a plurality of semiconductor electro-optic conversion structures 1 and a plurality of semiconductor photoelectric conversion structures 2 are formed on the substrate layer 3, and each of the semiconductor electro-optical conversion structures 1 has an electro-optical conversion layer 11 (not shown in the electro-optical conversion layer 12)
  • Each of the semiconductor photoelectric conversion structures 2 has a photoelectric conversion layer 22 (the photoelectric conversion layer 22 is not shown in the drawing).
  • the substrate layer 3 is transparent to the emitted light emitted by the electro-optical conversion layer 12, and the substrate layer 3 has a light-reflecting structure 32 for changing the propagation direction of the light, and the light emitted from the semiconductor electro-optical conversion structure 1 is propagated to the semiconductor photoelectric conversion structure 2. In order to achieve the transmission of energy, the voltage conversion is finally realized.
  • the material of the substrate layer 3 may be GaP, GaAs, InP, GaN, Si, Ge, GaSb and other semiconductor materials transparent to working light, and combinations thereof, and is of a first doping type.
  • a doping region 31 of a second doping type a PN formed by the substrate layer 3 and the doping region 31
  • the knot is reversed.
  • the plurality of semiconductor electro-optical conversion structures 1 of the present embodiment and the plurality of semiconductor photoelectric conversion structures 2 have a reverse bias PN junction structure, which can achieve electrical isolation. Make the input and output mutually unaffected.
  • the refractive index of the semiconductor electro-optical conversion structure 1, the isolation layer or the substrate layer 3 and the semiconductor photoelectric conversion structure 2 are matched to reduce total reflection at the interface of each layer of the light during light propagation to cause light. Energy loss.
  • the refractive index matching means that the refractive coefficients of the three elements are similar, or the refractive coefficients of the three elements gradually increase along the refractive index of the materials of the layers along the direction of propagation of the optical path.
  • the semiconductor transformer structure further comprises an optical trap for confining the emitted light inside the semiconductor transformer structure, in particular between the electro-optic conversion layer and the photoelectric conversion layer, to avoid Light energy loss caused by light leakage improves energy conversion efficiency.
  • the inventors have further divided the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure in the present invention into a plurality of layers for detailed description. It should be noted that the following description of the present invention focuses on the materials and uses of the various layers.
  • the semiconductor photoelectric transformer is set to have a double-sided structure, and the number of the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure is one.
  • Fig. 6 is a view showing the structure of a semiconductor transformer structure in accordance with a fifth embodiment of the present invention.
  • the semiconductor transformer structure includes: a first electrode layer 100; an electro-optical conversion layer 102 formed over the first electrode layer 100; a second electrode layer 104 formed over the electro-optical conversion layer 102; and a second electrode layer 104 formed on the second electrode layer 104 a first isolation layer 106 above; a third electrode layer 108 formed over the first isolation layer 106; a photoelectric conversion layer 110 formed over the third electrode layer 108; and a phototransformation layer 110 formed thereon
  • the electro-optic conversion layer 102 is configured to convert the input direct current into light to emit a working light of a desired wavelength range.
  • the working light includes a combination of one or more of the entire optical range from 100 nm of ultraviolet light to 10 um of infrared light, preferably a single frequency of light, such as 620 nm red light, 460 nm blue light, 380 nm purple light, It is advantageous to manufacture an electro-optical conversion layer using mature prior art.
  • the electro-optical conversion layer 102 can employ structures and materials having high quantum efficiency and high electro-optical conversion efficiency.
  • the electro-optical conversion layer of the laser structure may be an LED structure or a laser structure, and generally includes an active layer, a limiting layer, a current dispersion layer, a PN junction, etc., wherein the active layer may be a multiple quantum well structure, and the electro-optical conversion layer of the laser structure further includes a resonant cavity.
  • the LED structure includes a resonant LED structure.
  • the material selection of the electro-optic conversion layer 102 is based on the material's own characteristics (such as defect density, band structure, etc.) and the desired light wave characteristics (such as wavelength range), such as red-yellow AlGalnP, ultraviolet GaN and InGaN, blue.
  • the photoelectric conversion layer 110 is used to convert light into electricity to achieve voltage transformation.
  • Materials of the photoelectric conversion layer 110 include AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, InGaP, and other III-V direct-forbidden semiconductor materials and combinations thereof.
  • the electro-optical conversion layer 102 is generally selected from a direct band gap semiconductor material, and the band structure is matched with the band structure of the photoelectric conversion layer 110 such that the wavelength band of the working light emitted from the electro-optical conversion layer 102 and the photoelectric conversion layer 110 have the highest absorption efficiency. The bands are matched to achieve the highest lightwave energy conversion efficiency.
  • the first isolation layer 106, the second electrode layer 104, and the third electrode layer 108 are emitted to the electro-optical conversion layer 102.
  • the work is light and transparent.
  • the forbidden band width of the second electrode layer 104, the first isolation layer 106, and the third electrode layer 108 is greater than the photon energy of the working light emitted by the electro-optical conversion layer 102 to prevent the second electrode layer 104, The absorption of the working light by the isolation 106 layer and the third electrode layer 108 improves the light wave conversion efficiency.
  • the material refractive index of the first isolation layer 106, the second electrode layer 104, and the third electrode layer 108 are matched with the material refractive index of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 to avoid full occurrence at the interface during light propagation. reflection.
  • the second electrode layer 104, the first isolation layer 106, and the third The material refractive index of the electrode layer 108 and the photoelectric conversion layer 110 is the same to avoid total emission at each interface when light is transmitted from the electro-optical conversion layer 102 to the photoelectric conversion layer 110; in a more preferred embodiment of the present invention, The material refractive indices of the two electrode layers 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 are increased step by step.
  • the material refractive index of each of the layers is not less than the material refractive index of the previous layer, that is, the material refractive index of some of the layers may be the same as the previous one.
  • the material refractive index of the layers generally increases in an increasing trend; in a more preferred embodiment of the invention, the materials of the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 The refractive index gradually increases.
  • the entire light is generated. Reflecting to improve light transmission efficiency; on the other hand, causing light to be transmitted from the photoelectric conversion layer 110 to the electro-optical conversion layer 102 (mainly including the third and fourth electrodes of the photoelectric conversion layer 110 and the light reflected by the second reflective layer)
  • the full emission occurs to confine more light in the photoelectric conversion layer 110, thereby improving the efficiency of conversion of light into electricity.
  • the present invention can also reduce total reflection by roughening or regular patterns such as photonic crystal structures at the interface of different material layers. Therefore, in a preferred embodiment of the present invention, at least one of the electro-optic conversion layer 102, the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 has a roughened surface or a photonic crystal structure. To increase the light transmittance and reduce the total reflection of light.
  • the first isolation layer 106 is used to realize electrical isolation between the electro-optical conversion layer 102 and the photoelectric conversion layer 110, so that the input voltage and the output voltage do not affect each other, and are transparent to the working light, so that the light carrying the energy can be transmitted from the photoelectric conversion layer 102 to
  • the electro-optic conversion layer 110 realizes energy transfer and finally realizes voltage conversion.
  • the thickness of the first isolation layer 106 depends on the magnitude of the input and output voltage and the insulation requirement. The thicker the first isolation layer, the better the insulation effect, the higher the breakdown voltage that can withstand, but the greater the attenuation of light at the same time, Therefore, the thickness of the insulation layer is determined as follows: The thinner the better the insulation requirements are met.
  • the first spacer layer material 106 is preferably A1 2 0 3, A1N, Si0 2, MgO, Si 3 N 4, BN, diamond, LiA10 2, LiGa0 2, semi-insulating One or a combination of GaAs, SiC or GaP, GaN, and rare earth oxide REO and combinations thereof.
  • the material of the second electrode layer 104 and the third electrode layer 108 may be heavily doped GaAs, GaN, GaP, AlGaInP, AlGalnN, AlGalnAs, or conductive transparent metal oxide material ITO (indium tin oxide), Sn0 2 , ZnO, combinations thereof, and the like.
  • ITO indium tin oxide
  • the first reflective layer 101 is further included between the first electrode layer 100 and the electro-optic conversion layer 102
  • the second reflective layer 111 is further included between the fourth electrode layer 112 and the photoelectric conversion layer 110.
  • the first and second reflective layers confine the light back and forth between the electro-optic conversion layer 102 and the photoelectric conversion layer 110 to prevent light leakage and improve energy conversion efficiency of the light.
  • the material of the reflective layer needs to meet the requirements of high reflection efficiency of working light, stable material performance, low interface contact resistance, and good electrical conductivity.
  • One is a Bragg mirror structure, which realizes reflection by using a plurality of material layers having different refractive indices, for example, two materials having different refractive indexes (for example, GaAs and AlAs having a refractive index difference of 0.6) , Si with a refractive index difference of 2.2 and rare earth oxide REO) are made into a multilayer structure to achieve reflection;
  • one is a metal total mirror structure, which can directly deposit a metal with high conductivity and thermal conductivity to achieve reflection, such as Ag, Au , Cu, Ni, Al, Sn, Co, W, combinations thereof, and the like.
  • the reflective layer Since the thickness of the back electrode layer (ie, the first electrode layer 100 and the fourth electrode layer 112) in contact with the reflective layer is thick, the reflective layer has a metal total reflection mirror structure and has a heat dissipation function, and the transformer interior can be The heat generated is conducted out.
  • the first electrode layer 100 and the fourth electrode layer 112 are used as the extraction electrodes for input and output currents. Since they are not required to be transparent to the working light, they can be formed by using metals, alloys, ceramics, glass, plastics, conductive oxides and the like. A single layer and/or a multilayer composite structure, of which a low resistivity metal such as Cu is preferred. Preferably, the resistance can be lowered by increasing the thickness of the metal electrode layer while acting as a heat sink to dissipate heat.
  • the input threshold voltage and the output voltage of the semiconductor transformer structure are determined by the material property parameters of the photoelectric conversion layer and the electro-optical conversion layer, such as the forbidden band width, the doping concentration, etc., the corresponding characteristic parameters are adjusted by Realize the transformation.
  • the desired voltage transformation can be realized by adjusting the ratio of the number of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 according to actual needs, for example, as shown in FIG. 7, the semiconductor transformation structure includes an electro-optical conversion layer. 102 and two photoelectric conversion layers 1 10A and 110B which increase the transformation of the vertical structure with respect to the semiconductor transformation structure including the same single electro-optical conversion layer and a single photoelectric conversion layer, so that the transformation ratio is larger.
  • the first electrode layer 100, the electro-optical conversion layer 102 formed over the first electrode layer 100, and the second electrode layer 104 formed over the electro-optical conversion layer 102 are used as an electro-optical conversion
  • the third electrode layer 108, the photoelectric conversion layer 110 formed over the third electrode layer 108, and the fourth electrode layer 12 formed over the photoelectric conversion layer 110 are used as one photoelectric conversion structure.
  • the semiconductor DC photoelectric transformer may further include a plurality of layers of alternately stacked electro-optical conversion structures and photoelectric conversion structures in a vertical direction. An isolation layer is included between each adjacent electro-optical conversion structure and the photoelectric conversion structure to further increase the DC voltage transformation ratio.
  • the plurality of electro-optic conversion structures are connected in series with each other, and the structure of each of the electro-optic conversion structures (or each of the photoelectric conversion structures) may refer to the structures described in the above embodiments.
  • 8 is a schematic structural view of a semiconductor DC photoelectric transformer having two electro-optical conversion structures and a photoelectric conversion structure in a vertical direction, wherein the electro-optical conversion structure and the photoelectric conversion structure respectively include a first isolation layer 106 and a second isolation Layer 107.
  • the first electrode layer and the fourth electrode layer of each of the electro-optical conversion structures and the photoelectric conversion structure may not be selected from metal electrodes.
  • the same heavily doped semiconductor material as the second and third electrode layers GaAs, GaN, GaP, AlGaInP, AlGalnN, AlGalnAs, or
  • the electro-transparent metal oxide material ITO, Sn0 2 , ZnO and combinations thereof are advantageous for light propagation.
  • the invention provides a semiconductor transformer structure.
  • an electro-optical conversion layer at an input end of a semiconductor transformer structure, utilizing optical radiation generated by transitions between semiconductor electronic energy levels, converting direct current into light for transmission, and setting photoelectric conversion at the output end.
  • the layer converts light into electrical energy output. Since the voltage of the input unit and the output unit unit depends on the characteristic parameters and the number of the electro-optical conversion layer and the photoelectric conversion layer material, the transformer can directly realize the DC voltage transformation.
  • the isolation layer is made of a semiconductor material, physical parameters such as a lattice constant are similar to those of the semiconductor electro-optic conversion structure and the semiconductor photoelectric conversion structure, and thus the isolation layer in the semiconductor transformer structure of the present invention may be As a substrate material directly, or by epitaxially forming an isolation layer, an epitaxial photoelectric or electro-optical structure is further formed on the isolation layer, and the entire semiconductor transformation structure is formed by a double-sided epitaxy or a single-sided epitaxial process, eliminating the steps of peeling off, etc., and having an easy Achieve the advantages of no sacrificial substrate, high production efficiency and low cost. specifically,
  • FIG. 9 The process of forming the semiconductor transformer structure of the present invention by double-sided epitaxial process is as shown in FIG. 9:
  • the substrate is a semiconductor material that is transparent to the working light and corresponds to the isolation layer 3 in the finally formed semiconductor transformed structure. Both sides of the substrate are polished and can be used for double-sided epitaxial growth.
  • a semiconductor photoelectric conversion structure layer 20 is epitaxially formed on the other side of the substrate.
  • the semiconductor electro-optical conversion structure layer 10 is etched to divide and deposit the electrodes to form one or more semiconductor electro-optical conversion structures 1, and then the semiconductor electro-optical conversion structures 1 are connected in series and/or in parallel by a planar metallization process.
  • the semiconductor photoelectric conversion structure layer 20 is etched to divide and deposit the electrodes to form one or more semiconductor photoelectric conversion structures 2, and then the semiconductor photoelectric conversion structures 2 are connected in series and/or in parallel by a planar metallization process.
  • step S204 and step S205 can be reversed, and there is no difference between the two modes.
  • a suitable material layer at an appropriate time for example, double-sided epitaxy forms the semiconductor of the third embodiment of the present invention.
  • the transformer structure requires a substrate having a plurality of doped layers to be provided in step S101. The technical details of this processing are flexible and diverse, but are generally the general techniques in the art, and therefore will not be described again.
  • the thickness of the spacer layer may be relatively thin, and the spacer layer may not be used as a substrate for a double-sided epitaxial process. At this time, a single-sided epitaxial process can be employed.
  • FIG. 10 The process of forming the semiconductor transformer structure of the present invention by the single-sided epitaxial process is as shown in FIG. 10:
  • the substrate is polished on one side for single-sided epitaxial growth.
  • An isolation layer 3 is epitaxially formed on the semiconductor electro-optic conversion structure layer 10.
  • a semiconductor photoelectric conversion structure layer 20 is formed on the isolation layer 3. 5205.
  • the semiconductor electro-optical conversion structure layer 10 and the semiconductor photoelectric conversion structure layer 20 are etched and divided to form one or more semiconductor electro-optical conversion structures 1 and one or more semiconductor photoelectric conversion structures 2.
  • the semiconductor electro-optical conversion structures 1 are serially and/or in parallel by a process such as deposition of electrodes, planar metallization, and the like, and the semiconductor photoelectric conversion structures 2 are serially and/or in parallel.
  • steps S202-S303 and steps S205-S206 can be changed, and there is no difference between the two modes.
  • a suitable material layer at an appropriate time for example, double-sided epitaxy forms the third embodiment of the present invention.
  • a substrate having a plurality of doped layers in step S101 it is necessary to provide a substrate having a plurality of doped layers in step S101). The technical details of the processing are flexible and diverse, but are generally the general techniques in the art, and therefore will not be described again.
  • the semiconductor transformer structure provided by the invention provides an electro-optical conversion layer at an input end of the semiconductor transformer structure, converts electricity into light for transmission by using optical radiation generated by transitions between semiconductor electronic energy levels, and provides a photoelectric conversion layer at the output end.
  • the input layer and the output end directly use the isolation layer (or substrate layer) of the semiconductor material, and rely on the reverse bias PN junction structure to achieve electrical isolation, greatly expanding the selection of the isolation layer (or substrate layer).
  • the range has the advantages of easy availability, low cost, and better index matching.
  • the isolation layer of the semiconductor transformer structure of the present invention can form a crystal structure by epitaxy, other semiconductor structures can be further extended thereon, thereby avoiding complicated processes such as peeling and bonding, thereby further reducing production cost and enabling Large-scale manufacturing is possible.
  • the present invention also provides a chip including at least one of the above-described semiconductor transformer structures for converting an input voltage of an external power source into a specific operating voltage required for each circuit function module in the chip.
  • the chip of the present invention includes, in addition to any of the above-described semiconductor transformer structures 100 , a substrate 200 , one or more power pins 300 , an on-chip power distribution network 400 , and Circuit function module 500.
  • the power pin 300 is connected to the external power source; the on-chip power distribution network 400 is connected to the power pin 300 and the input end of the at least one semiconductor transformer structure 100 , so that the input end of the semiconductor transformer structure 100 is connected to the external power source;
  • the output of the transformer structure 100 is connected to a circuit function module 500 that requires power supply to provide the power required for operation.
  • the circuit function module 500 refers to a digital logic circuit, an analog circuit, an RF circuit, a flash circuit, a MEMS device and the like that are integrated on the same chip and require different voltages. For example, on the flash chip, multiple sets of different supply voltages are required, and the voltage value spans up to 1.2V-20V. Especially, the write programming voltage often requires 10-20V.
  • the chip further comprises: at least one control module 600, and the control module 600 is connected to and controlled by the at least one semiconductor transformer structure 100.
  • the control module 600 can sample and control the current and voltage of the input and output terminals of the semiconductor transformer structure 100 to achieve voltage regulation, voltage regulation, power efficiency optimization, and power supply shutdown.
  • the chip is a full chip integration.
  • the chip according to the embodiment of the present invention can be formed by epitaxy because of its internal semiconductor transformer structure, so that it can be easily integrated with other components, has mature process, low cost, and can realize a full-chip integration. advantage.

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Abstract

提供了一种半导体变压结构和具有其的芯片。所述半导体变压结构包括：一个或多个半导体电光转换结构，半导体电光转换结构包括电光转换层，电光转换层用于将输入电能转换为光能;和一个或多个半导体光电转换结构，半导体光电转换结构包括光电转换层，光电转换层用于将光能转换为输出电能；光电转换层的吸收光谱与电光转换层的发射光谱之间频谱匹配；半导体电光转换结构、半导体光电转换结构之间通过反偏PN结结构进行隔离。其优点在于材料易于获得、成本低廉、工艺成熟。

Description

一种半导体变压结构和具有其的芯片
技术领域 本发明涉及电流电压变换领域， 特别涉及一种半导体变压结构和具有其的芯片。 背景技术 随着发光器件特别是 LED与光伏电池技术的日益成熟， 一种光电变压器被提了出来， 该光电变压器一般包括 LED组成的电光转换模块和光伏电池组成的光电转换模块， 利用光 电-电光能量转换过程来实现变压目的。 这类光电变压器中， 电光转换模块与光电转换模块 之间通常釆用透明绝缘材料的隔离层进行电气隔离。
但实际运用中，由于光学特性与电学特性难以同时得到匹配，隔离层材料选择十分受限。 具体地， 绝缘特性好的材料往往折射率不匹配， 从而电光转换模块的发射光在绝缘层的界面 上发生全反射， 光线不能顺利传输到光电转换模块， 导致总体能量转换效率降低； 而与电光 转换模块及光电转换模块的折射率匹配的材料往往属于半导体， 绝缘特性不佳。 此外， 在加 工形成隔离层的过程中， 存在着外延衬底选择困难以及工艺复杂度的问题。 发明内容 本发明的目的旨在至少解决上述技术缺陷之一， 提出一种基于反偏 PN结结构隔离的半 导体变压结构及具有其的芯片。
本发明提出一种半导体变压结构， 包括： 一个或多个半导体电光转换结构， 所述半 导体电光转换结构包括电光转换层， 所述电光转换层用于将输入电能转换为光能； 和一 个或多个半导体光电转换结构， 所述半导体电光转换结构包括光电转换层， 所述光电转 换层用于将所述光能转换为输出电能， 其中， 所述光电转换层的吸收光谱与所述电光转 换层的发射光谱之间频谱匹配， 其中， 所述半导体电光转换结构、 所述半导体光电转换 结构之间通过反偏 PN结结构进行隔离。
在本发明的一个实施例中， 所述半导体电光转换结构和所述半导体光电转换结构为 多个且相互串联， 且所述半导体光电转换结构的数目与所述半导体电光转换结构的数目 成比例。
在本发明的一个实施例中， 还包括： 隔离层， 所述隔离层为半导体， 且所述隔离层 为第一掺杂类型， 其中， 所述半导体电光转换结构形成在所述隔离层一侧， 所述半导体 光电转换结构形成在所述隔离层另一侧， 所述隔离层对所述电光转换层的发射光透明， 其中， 所述隔离层与所述半导体电光转换结构之间以及所述隔离层与所述半导体光电转 换结构之间具有第二掺杂类型的掺杂区， 所述隔离层与所述掺杂区形成的 PN结呈反偏 状态。
在本发明的一个实施例中， 还包括： 隔离层， 所述隔离层为半导体， 且所述隔离层 为第一掺杂类型， 其中， 所述半导体电光转换结构形成在所述隔离层一侧， 所述半导体 光电转换结构形成在所述隔离层另一侧， 所述隔离层所述电光转换层的发射光透明， 其 中， 所述半导体电光转换结构包括第一半导体掺杂层、 所述电光转换层和第二半导体掺 杂层， 所述第二半导体掺杂层与所述隔离层接触， 并且所述第一半导体掺杂层为第一掺 杂类型， 所述第二半导体掺杂层为第二掺杂类型， 所述隔离层与所述第二半导体掺杂层 形成的 PN结呈反偏状态， 其中， 所述半导体光电转换结构包括第三半导体掺杂层、 所 述光电转换层和第四半导体掺杂层， 所述第四半导体掺杂层与所述隔离层接触， 并且所 述第三半导体掺杂层为第一掺杂类型， 所述第四半导体掺杂层为第二掺杂类型， 所述隔 离层与所述第四掺杂层形成的 PN结呈反偏状态。
在本发明的一个实施例中， 还包括： 隔离层， 所述隔离层为半导体， 其中， 所述半 导体电光转换结构形成在所述隔离层一侧， 所述半导体光电转换结构形成在所述隔离层 另一侧， 所述隔离层所述电光转换层的发射光透明， 其中， 所述隔离层具有多个半导体 掺杂层， 并且所述多个半导体掺杂层中至少两组相邻的所述半导体掺杂层掺杂类型相反, 以形成至少两组 PN结， 其中， 所述 PN结呈反偏状态。
在本发明的一个实施例中， 还包括： 衬底层， 所述衬底层为半导体， 且所述衬底层 为第一掺杂类型， 其中， 所述半导体光电转换结构和所述半导体电光转换结构形成在所 述衬底层的同一侧， 所述衬底层对所述电光转换层的发射光透明， 且所述衬底层底部具 有反光结构， 其中， 所述衬底层与所述半导体电光转换结构之间以及所述衬底层与所述 半导体光电转换结构之间具有第二掺杂类型的掺杂区， 所述衬底层与所述掺杂区形成的 PN结呈反偏状态。
在本发明的一个实施例中， 光线传播路径上的各层材料的折射系数匹配。
在本发明的一个实施例中， 还包括： 光学陷阱， 所述光学陷阱用于将所述电光转换 层的发射光限制在所述半导体变压结构内部， 以防止光泄露引起的能量损失。
在本发明的一个实施例中， 所述电光转换层的材料为： AlGalnP , GaN, InGaN, InGaN, AlGalnN, ZnO , AlGalnAs, GaAs , InGaAs, InGaAsP , AlGaAs, AlGalnSb , InGaAsNSb 以及其它 III族氮系化合物、 III族砷系或磷系化合物半导体材料及其组合， 有机发光材料或量子点发光材料。
在本发明的一个实施例中， 所述光电转换层的材料为： AlGalnP、 InGaAs、 InGaN、 AlGalnN, InGaAsP , GaAs, GaSb, InGaP , InGaAs, InGaAsP , AlGaAs, AlGaP, InAlP, AlGaAsSb , InGaAsNSb, 其它 III-V族直接禁带半导体材料及其组合， 有机光伏材料或 量子点光伏材料。
在本发明的一个实施例中，所述隔离层或衬底层的材料包括 GaP , GaAs, InP, GaN, Si, Ge, GaSb以及其它对工作光线透明的半导体材料及其组合。
在本发明的一个实施例中， 所述半导体变压结构通过双面外延或单面外延工艺实现。 根据本发明实施例的半导体变压结构， 通过改变半导体光电转换结构的数目与所述 半导体电光转换结构的数目， 以实现不同的变压比， 同时， 运用半导体中设置反偏 PN 结结构的方法以实现电气隔离，使得隔离层的材料选择范围更广，具有易于获得、成本低廉、 折射率匹配更优的优点。 此外， 由于本发明的半导体变压结构的隔离层可通过外延形成结晶 结构， 其上还可以进一步外延其它半导体结构， 避免了剥离、键合（bonding )等复杂工序， 进一步降低了生产成本， 使大规模制造成为可能。
本发明还提出一种芯片， 该芯片包括上述任一种半导体变压结构， 所述半导体变压 结构用于在片上将外部电源的输入电压转变为所述芯片上其他部件所需的特定工作电 压。
根据本发明实施例的芯片由于其内部的半导体变压结构可以通过外延形成， 故可以 很方便地与其他部件进行集成， 具有工艺成熟， 成本较小， 筒化电源方案， 可实现单片集成 的优点。
本发明附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显, 或通过本发明的实践了解到。 附¾说明 本发明上述的和 /或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和 容易理解， 其中：
图 1为本发明的半导体变压结构的工作原理图；
图 2为本发明第一实施例的半导体变压结构的结构示意图；
图 3为本发明第二实施例的半导体变压结构的结构示意图；
图 4为本发明第三实施例的半导体变压结构的结构示意图；
图 5为本发明第四实施例的半导体变压结构的结构示意图；
图 6为本发明第五实施例的半导体变压结构的结构示意图；
图 7为本发明第六实施例的半导体变压结构的结构示意图；
图 8为本发明第七实施例的半导体变压结构的结构示意图；
图 9为双面外延工艺形成本发明的半导体变压结构的流程图；
图 10为单面外延工艺形成本发明的半导体变压结构的流程图； 和
图 11为本发明的具有半导体变压结构的芯片的结构示意图。 具体实 ife方式 下面详细描述本发明的实施例， 所述实施例的示例在附图中示出， 其中自始至终相同或 类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的 实施例是示例性的， 仅用于解释本发明， 而不能解释为对本发明的限制。
下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了筒化本发 明的公开， 下文中对特定例子的部件和设置进行描述。 当然， 它们仅仅为示例， 并且目的不 在于限制本发明。 此外， 本发明可以在不同例子中重复参考数字和 /或字母。 这种重复是为 了筒化和清楚的目的， 其本身不指示所讨论各种实施例和 /或设置之间的关系。 此外， 本发 明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的 可应用于性和 /或其他材料的使用。另外， 以下描述的第一特征在第二特征之 "上"的结构可以 包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特 征之间的实施例， 这样第一和第二特征可能不是直接接触。
为使本领域技术人员更好地理解本发明，先对现有技术与本发明的原理进行阐述和对比。 从物理原理上说， 传统的交流变压器利用的是电磁感应原理， 导体中的自由电子震荡产生电 磁波作为能量传递的， 通过主次线圏之间的耦合传递能量， 从而实现交流电压变换。 本发明 中的半导体变压结构遵循的是量子力学原理，通过半导体材料中载流子在不同能级间的跃迁 产生光子， 利用光子作为能量传递介盾， 再在另外的半导体材料中激发产生载流子， 从而实 现电压变换。 因此， 由于传递能量介盾的不同， 粒子（光子）特性取代波（电磁波）的特性 在本发明的直流变压器中成为基本的工作原理。
本发明中的半导体变压结构的总体能量转换效率主要由三个因素决定： 电光能量转换效 率， 光电能量转换效率， 光能量损失。 由于 LED和光伏电池技术的发展， 现在先进的半导 体器件的电光转换效率和光电转换效率已经达到了很高的水平，例如 AlGalnP材料制备的红 光 LED的内量子效率已经接近 100%, GaN材料制备的蓝光 LED内量子效率也已达到 80%, 而 III-V族光伏电池的内量子效率也已接近 100%,因此光能量损失就成为了限制本发明直流 变压器能量转换效率的主要因素， 因此本发明中提出了三种技术来尽量减小光能量损失， 提 高能量转换效率， 分别是： 电光转换结构发射光语与光电转换结构吸收光语之间的频语匹配 以减少光子的非吸收损失和热损失，光线传播路径上的各个材料的折射系数匹配以减少全反 射临界角损失和菲涅耳损失， 光陷阱以减少光线泄露引起的能量损失。 这些在下文中有具体 的说明。
本发明提供一种半导体变压结构， 其工作原理如图 1 所示： 在输入端的每个半导体电 光转换结构上输入直流电压 VL 以在半导体电光转换结构中注入载流子复合产生光子， 光 子传输至半导体光电转换结构， 以在半导体光电转换结构中激发产生不同的载流子， 并通过 内建电场分离，每个半导体光电转换结构上输出直流电压 V2 ,从而利用光波实现能量传输。 在该能量传输过程中， 一方面，
Figure imgf000006_0001
V2的数值取决于半导体电光转换结构和半导体光电转 换结构的材料特性参数， 如材料种类、 应变特性、 禁带宽度、 掺杂浓度等， 故通过调节 相应的特性参数以实现能量转换效率最优化； 另一方面， 通过在输入端和输出端分别串联 数目成比例的半导体电光转换结构和半导体光电转换结构， 利用电光转换结构和光电转 换结构的数目比实现变压。 例如， 假设半导体电光转换结构为 m个， 半导体光电转换结 构为 n个， 则输出总电压 /输入总电压 ^V / n^V^ 在本发明的实施例中， 以串联多 个半导体电光转换结构和半导体光电转换结构为例进行了介绍， 但是也可实现半导体电 光转换结构和半导体光电转换结构的并联， 或者串并联等， 在此不再赘述。
在本发明的半导体变压结构中， 半导体电光转换结构可为发光二极管（LED )、谐振发 光二极管 (RC_LED)或激光二极管 （ LD )。 这几种 LED均能够有效地将电能转换为光能， 工 作性能稳定可靠， 并且热效应少， 并且 RC_LED进一步具有方向性好、 调变速度较高的优 点， LD 进一步具有单色性好、 亮度较高的优点。 半导体电光转换结构包括电光转换层， 其材料可为红黄光的 AlGalnP, 紫外的 GaN和 InGaN、 蓝紫光的 InGaN、 AlGalnN和 ZnO , 红光或红外光的 AlGaInAs、 GaAs、 InGaAs、 InGaAsP , AlGaAs, InGaAsNSb以 及其它 III族氮系化合物、 III族砷系或磷系化合物半导体材料及其组合， 有机发光材料 或量子点发光材料。
在本发明的半导体变压结构中，半导体光电转换结构可为具有背接触（ b ack contact ) 或埋接触 （ buried contact ) 的单面引出电极结构的光电池。 具有背接触或埋接触的单面 引出电极结构的光电池，其受光面可以避免受到电极遮光影响，故能量转换效率更高，。 半导体光电转换结构包括光电转换层，其材料可为 AlGaInP、 InGaAs、 InGaN, AlGalnN, InGaAsP , GaAs, GaSb , InGaP , InGaAs, InGaAsP , AlGaAs, AlGaP , InAlP , AlGaAsSb , InGaAsNSb , 其它 III-V族直接禁带半导体材料及其组合， 有机光伏材料或量子点光伏 材料。
需要指出的是，光电转换层的吸收光谱与所述电光转换层的发射光谱之间频谱匹配， 即， 电光转换层发出的光线要与光电转换层光电转换效率最优化的光线特性匹配， 以使 器件的电光 -光电能量转换效率较高， 转换过程中光子的能损较少。 具体地： 电光转换层 的发射光可以是与光电转换层的吸收效率最大处一致对应的单色光， 也可能为其他频率 的、 能使光电转换层发生光伏效应的量子效率大于 1的特定频率光线， 一种优化的情况 是电光转换层发射的光子能量的大小既能确保光子可以被光电转换层吸收,又不会由于 光子能量过高导致多余能量作为热损失掉， 一种可能的理想状况是电光转换层与光电转 换层有源材料的禁带宽度一致， 从而既能确保光线吸收又不会引起剩余光子能量的损失。 需要说明的是， 在本发明的实施例中单色光具有一定的光谱宽度， 例如， 对于红光 LED 来说具有 20nm左右的光谱宽度， 而非限定某个具体的频率点， 此为公知技术， 在此不 再赘述。
在本发明的半导体变压结构中，半导体电光转换结构和半导体光电转换结构之间通过 反偏 PN结结构进行隔离， 其中， 用于隔离的材料需要对工作光线透明。 所谓透明是指 材料的禁带宽度大于光子的能量， 这样能够保证不会引起能带跃迁， 导致作为能量载体 的光子的损耗。根据反偏 PN结结构实现电气隔离的具体形式不同，可细分为多种情况。 下面参考附图描述根据本发明实施例的半导体变压结构。 在本发明的一个实施例中， 半 导体电光转换结构可为一个， 半导体光电转换结构可为多个； 在本发明的另一个实施例 中， 半导体电光转换结构可为多个， 半导体光电转换结构可为一个； 在本发明的再一个 实施例中， 半导体电光转换结构及半导体光电转换结构可为均为多个。 在以下的实施例 中， 将以多个半导体电光转换结构及半导体光电转换结构为例进行描述， 但需要说明的 是以下实施例仅是示意性地， 并不是对本发明的限制。
图 2所示为根据本发明第一实施例的半导体变压结构的结构示意图。
如图 2所示， 半导体变压结构包括多个串联的半导体电光转换结构 1、 多个串联的半导 体光电转换结构 2和隔离层 3。 其中， 多个半导体电光转换结构 1形成在隔离层 3—侧， 且每个半导体电光转换结构 1 包括电光转换层 12 (电光转换层 12图中未示出） ， 以及 多个半导体光电转换结构 2形成在隔离层 3另一侧， 且每个半导体光电转换结构 2包括 光电转换层 22 (光电转换层 22图中未示出）。 隔离层 3对电光转换层 12发出的发射光 透明， 使携带能量的光线能够从半导体电光转换结构 1传输到半导体光电转换结构 2 , 实现能量的传输， 最终实现电压变换。 隔离层 3 的材料可为 GaP , GaAs, InP , GaN, Si, Ge, GaSb 以及其它对工作光线透明的半导体材料及其组合， 且为第一掺杂类型。 隔离层 3与多个半导体电光转换结构 1之间以及隔离层 3与多个半导体光电转换结构 2 之间具有第二掺杂类型的掺杂区 31 , 其中隔离层 3与掺杂区 31形成的 PN结呈反偏状 态。 具体地， 当隔离层 3为 P型掺杂而掺杂区 31为 N型掺杂时， 可以对隔离层 3施加 低电位而对掺杂区 31施加高电位。或者， 当隔离层 3为 N型掺杂而掺杂区 31为 P型掺 杂时， 可以对隔离层 3施加高电位而对掺杂区 31施加低电位。 从而， 多个半导体电光 转换结构 1与多个半导体光电转换结构 2之间的 PN结结构均呈反偏，载流子无法通过， 无导通电流， 可以实现电气隔离， 使输入端和输出端互不影响。
图 3所示为根据本发明第二实施例的半导体变压结构的结构示意图。
如图 3所示， 半导体变压结构包括多个串联的半导体电光转换结构 1、 多个串联的半导 体光电转换结构 2和隔离层 3。 其中， 多个半导体电光转换结构 1形成在隔离层 3—侧， 且多个半导体光电转换结构 2形成在隔离层 3另一侧。 隔离层 3对电光转换层 12发出 的发射光透明， 隔离层 3的材料可为 GaP, GaAs, InP , GaN, Si, Ge, GaSb以及其它 对工作光线透明的半导体材料及其组合， 且为第一掺杂类型。 其中， 半导体光电转换结 构 1包括第一半导体掺杂层 1 1、 电光转换层 12和第二半导体掺杂层 13 , 其中第二半导 体掺杂层 13与隔离层 3接触， 第一半导体掺杂层 1 1为第一掺杂类型， 第二半导体掺杂 层 13为第二掺杂类型， 隔离层 3与第二半导体掺杂层 13形成的 PN结呈反偏状态。 其 中， 半导体电光转换结构 2包括第三半导体掺杂层 21、 光电转换层 22和第四半导体掺 杂层 23 ,第四半导体掺杂层 23与隔离层 3接触，第三半导体掺杂层 21为第一掺杂类型， 第四半导体掺杂层 23为第二掺杂类型， 隔离层 3与第四半导体掺杂层 23形成的 PN结 呈反偏状态。 与上述第一实施例类似， 本实施例的多个半导体电光转换结构 1与多个半 导体光电转换结构 2之间具有反偏 PN结结构， 可以实现电气隔离， 使输入端和输出端 互不影响。
图 4所示为根据本发明第三实施例的半导体变压结构的结构示意图。
如图 4所示， 半导体变压结构包括多个串联的半导体电光转换结构 1、 多个串联的半导 体光电转换结构 2和隔离层 3。 其中， 多个半导体电光转换结构 1形成在隔离层 3—侧， 且每个半导体电光转换结构 1 包括电光转换层 12 (电光转换层 12图中未示出） ， 以及 多个半导体光电转换结构 2形成在隔离层 3另一侧， 且每个半导体光电转换结构 2包括 光电转换层 22 (光电转换层 22图中未示出）。 隔离层 3对电光转换层 12发出的发射光 透明， 使携带能量的光线能够从半导体电光转换结构 1传输到半导体光电转换结构 2 , 实现能量的传输， 最终实现电压变换。 隔离层 3 的材料可为 GaP , GaAs, InP , GaN, Si, Ge, GaSb 以及其它对工作光线透明的半导体材料及其组合。 其中隔离层 3具有多 个半导体掺杂层。 例如， 隔离层 3 包括第一半导体掺杂层 3a、 第二半导体掺杂层 3b和 第三半导体掺杂层 3c,其中第一半导体掺杂层 3a和第二半导体掺杂层 3b的掺杂类型相 反， 第二半导体掺杂层 3b和第三半导体掺杂层 3c的掺杂类型相反。 从而， 多个半导体 电光转换结构 1与多个半导体光电转换结构 2之间具有 3a-3b界面的第一 PN结和 3b-3c 界面的第二 PN结， 将第一 PN结和第二 PN结均反偏， 即可以实现电气隔离， 使输入 端和输出端互不影响。 需要指出的是， 隔离层 3可以包括更多层半导体掺杂层结构， 只 需要其中至少两组相邻的半导体掺杂层掺杂类型相反， 以形成至少两组 PN结， 使这些 PN结均呈反偏状态， 便可以实现电气隔离， 使输入端和输出端互不影响。
需要说明的是， 上述第一实施例、 第二实施例和第三实施例中， 可以使半导体电光 转换结构 1位于隔离层 3之上、 半导体光电转换结构 2位于隔离层 3之下， 也可以使半导 体电光转换结构 1位于隔离层 3之下、 半导体光电转换结构 2位于隔离层 3之上， 这一相 对位置的改变并不对半导体变压结构的工作造成实盾影响。
图 5所示为根据本发明第四实施例的半导体变压结构的结构示意图。
如图 5所示， 半导体变压结构包括多个串联的半导体电光转换结构 1、 多个串联的半导 体光电转换结构 2和衬底层 3。 其中， 多个半导体电光转换结构 1和多个半导体光电转换 结构 2形成在衬底层 3之上， 且每个半导体电光转换结构 1具有电光转换层 1 1 (电光转 换层 12图中未示出） ， 每个半导体光电转换结构 2具有光电转换层 22 (光电转换层 22 图中未示出） 。 衬底层 3对电光转换层 12发出的发射光透明， 且衬底层 3具有反光结 构 32, 反光结构 32用于改变光的传播方向， 使半导体电光转换结构 1发出的光传播到 半导体光电转换结构 2上， 以实现能量的传输， 最终实现电压变换。 其中， 衬底层 3的 材料可为 GaP, GaAs, InP, GaN, Si, Ge, GaSb以及其它对工作光线透明的半导体材 料及其组合， 且为第一掺杂类型。 衬底层 3与多个半导体电光转换结构 1之间以及衬底 层 3与多个半导体光电转换结构 2之间具有第二掺杂类型的掺杂区 31 ,衬底层 3与掺杂 区 31形成的 PN结呈反偏状态。 与上述第一实施例类似，本实施例的多个半导体电光转 换结构 1与多个半导体光电转换结构 2之间具有反偏 PN结结构， 可以实现电气隔离， 使输入端和输出端互不影响。
在本发明的实施例中， 优选地， 半导体电光转换结构 1、 隔离层或衬底层 3和半导体 光电转换结构 2的折射系数匹配， 以减少光线传播过程中在各层材料界面发生全反射导致 光能量损耗。 其中折射系数匹配是指三者的折射系数类似， 或者三者的折射系数沿着光 路传播的方向各层材料的折射系数逐渐递增。
在本发明的实施例中， 优选地， 半导体变压结构还进一步包括光学陷阱， 用于将发射 光限制在半导体变压结构内部， 特别是限制在电光转换层和光电转换层之间， 以避免漏 光带来的光能量损失， 提高能量转换效率。
为使本发明的半导体变压结构更好地被本领域技术人员理解， 发明人将本发明中的 半导体电光转换结构和半导体光电转换结构进一步划分为多个层次进行详细介绍。 需要 说明的是， 下文对本发明的阐述侧重于各层次的材料及用途， 为筒便起见， 设定半导体 光电变压器为双面结构， 半导体电光转换结构和半导体光电转换结构的数目均为一个。
图 6所示为才 居本发明第五实施例的半导体变压结构的结构示意图。该半导体变压结构 包括： 第一电极层 100; 形成在第一电极层 100之上的电光转换层 102; 形成在电光转换层 102之上的第二电极层 104; 形成在第二电极层 104之上的第一隔离层 106; 形成在第一隔 离层 106之上的第三电极层 108; 形成在第三电极层 108之上的光电转换层 110; 以及形成 在光电转换层 110之上的第四电极层 112。
其中， 电光转换层 102用以将输入的直流电转换为光， 发出所需要的波长范围的工作光 线。工作光线包括从 lOOnm的紫外光到 10um的红外光的整个光语范围中的一个或多个波段 的组合， 优选为单频率的光线， 例如 620nm的红光、 460nm的蓝光、 380nm的紫光， 以有 利于运用成熟的现有技术制造电光转换层。 例如电光转换层 102可以釆用具有高量子效率、 高电光转换效率的结构和材料。具体地，可以为 LED结构或激光器结构，一般包括有源层， 限制层， 电流分散层， PN结等结构， 其中有源层可以为多量子阱结构， 激光器结构的电光 转换层还包括谐振腔， LED结构包括谐振 LED结构。 电光转换层 102的材料选择基于材 料自身特性（如缺陷密度、 能带结构等）和所需要的光波特性（如波长范围）， 例如可以釆 用红黄光的 AlGalnP, 紫外的 GaN和 InGaN、 蓝紫光的 InGaN和 AlGaInN、 ZnO、 红光 或红外光的 AlGaInAs、 GaAS、 InGaAs 、 以及其它 III族氮系化合物、 III族 As系或碑 系化合物半导体材料及其组合，其中缺陷密度低、光转换效率高的材料（如 AlGaInP、 InGaN, GaN ) 为优选。
其中， 光电转换层 110用以将光转换为电以实现变压。 光电转换层 110的材料包括 AlGalnP , InGaAs, InGaN, AlGalnN, InGaAsP , InGaP , 以及其它 III- V族直接禁带半 导体材料及其组合。 电光转换层 102—般可以选用直接禁带半导体材料， 其能带结构和 光电转换层 110的能带结构相匹配以使电光转换层 102发出的工作光线的波段与光电转 换层 1 10吸收效率最高的波段相匹配， 以达到最高的光波能量转换效率。
其中， 第一隔离层 106、 第二电极层 104和第三电极层 108对电光转换层 102发出 的工作光线透明。 在本发明实施例中， 第二电极层 104、 第一隔离层 106和第三电极层 108材料的禁带宽度大于电光转换层 102发出的工作光线的光子能量， 以防止第二电极 层 104、 隔离 106层和第三电极层 108对所述工作光线的吸收， 提高光波转换效率。
此外， 第一隔离层 106、 第二电极层 104和第三电极层 108的材料折射系数与电光 转换层 102和光电转换层 110的材料折射系数匹配， 以避免光传播过程中在界面处发生 全反射。 由于当且仅当光线从折射系数较大的材料进入折射系数较小的材料时发生全反射， 故在本发明一个优选的实施例中， 第二电极层 104、 第一隔离层 106、 第三电极层 108 和光电转换层 1 10的材料折射系数相同， 以避免光从电光转换层 102传输至光电转换层 110 时在各界面处发生全发射； 在本发明一个更优选的实施例中， 第二电极层 104、 第 一隔离层 106、 第三电极层 108和光电转换层 110的材料折射系数梯次增加。 所述"梯次 增加"的含义是： 每个所述层的材料折射系数不小于其前一个所述层的材料折射系数， 即某些所述层的材料折射系数可以与其前一个所述层相同，但所述各层的材料折射系数 整体呈递增趋势； 在本发明一个更优选的实施例中， 第二电极层 104、 第一隔离层 106、 第三电极层 108和光电转换层 110的材料折射系数逐渐增加。通过上述更优选的实施例， 一方面避免光沿电光转化层 102向光电转换层 110方向传输时（包括电光转换层 102产 生的光以及所述各电极层和各反射层反射的光）发生全反射， 以提高光的传输效率； 另 一方面促使光从光电转换层 1 10向电光转换层 102方向传输时（主要包括光电转换层 110 的第三和第四电极以及第二反射层反射的光）发生全发射， 以将更多的光限制在光电转 化层 1 10中， 从而提高光转换为电的效率。
另外， 本发明还可以釆用在不同材料层的界面处通过粗糙化或规则的图形如光子晶体 结构等来减低全反射。 故在本发明优选的实施例中， 电光转换层 102、 第二电极层 104、 第一隔离层 106、 第三电极层 108和光电转换层 1 10中的至少一个具有粗糙化表面或光 子晶体结构， 以增大光透射率， 降低光的全反射。
第一隔离层 106用于实现电光转换层 102和光电转换层 110的电气隔离， 使输入电 压和输出电压不相互影响， 同时对工作光线透明， 使携带能量的光线能够从光电转换层 102传输到电光转换层 110, 实现能量的传输， 最终实现电压变换。
第一隔离层除了利用上文叙述的 "隔离层釆用半导体材料，设置反偏的 PN结结构" 实现电气隔离之外， 还可以利用 "隔离层釆用绝缘材料" 的方法来实现电气隔离。
第一隔离层 106的厚度取决于输入输出的电压的大小以及绝缘要求， 第一隔离层越 厚， 绝缘效果越好， 能承受的击穿电压越高， 但同时对光的衰减可能越大， 因此绝缘层 厚度的确定原则为： 在满足绝缘要求下越薄越好。 基于上述要求， 在本发明实施例中， 第一隔离层 106的材料优选为 A1203 , A1N, Si02, MgO, Si3N4, BN, 金刚石， LiA102, LiGa02, 半绝缘的 GaAs、 SiC或 GaP, GaN中的一种及其组合， 以及稀土氧化物 REO 及其组合。第二电极层 104和第三电极层 108的材料可以为重掺杂的 GaAs、GaN、GaP, AlGaInP、 AlGalnN, AlGalnAs, 或者导电透明金属氧化物材料 ITO (铟锡氧化物） 、 Sn02、 ZnO及其组合等。
在本发明一个优选的实施例中， 第一电极层 100和电光转换层 102之间还包括第一 反射层 101 , 第四电极层 112和光电转换层 110之间还包括第二反射层 111 , 如图 6所 示。所述第一和第二反射层将光限制在电光转换层 102和光电转换层 110之间来回反射， 以防止光泄露， 提高光的能量转换效率。 反射层的材料需要满足对工作光线反射效率高、 材料性能稳定、 界面接触电阻低、 导电性好等要求。 具体可以通过以下两种方式实现： 一种 是布拉格反射镜结构， 利用多层折射率不同的材料层实现反射， 比如釆用两种不同折射率的 材料（例如折射率相差的 0.6的 GaAs和 AlAs, 折射率相差 2.2的 Si和稀土氧化物 REO ) 制成多层结构以实现反射； 一种是金属全反射镜结构， 可以直接淀积高导电率和导热率的 金属实现反射， 例如 Ag、 Au、 Cu、 Ni、 Al、 Sn、 Co、 W及其组合等。 由于与反射层相接 触的背电极层 （即第一电极层 100和第四电极层 112 ) 的厚度较厚， 故反射层釆用金属 全反射镜结构同时兼具散热的功能， 可以将变压器内部产生的热量传导出来。
其中， 第一电极层 100和第四电极层 112用作引出电极以输入输出电流， 由于不需要 对工作光线透明， 故可以釆用金属、 合金、 陶瓷、 玻璃、 塑料、 导电氧化物等材料形成单层 和 /或多层复合结构， 其中优选为低电阻率的金属， 例如 Cu。 优选地， 可以通过增加金属电 极层的厚度以降低电阻， 同时起到热沉的作用以散热。
需指出的是， 由于该半导体变压结构的输入阈值电压和输出电压决定于光电转换层和电 光转换层的材料特性参数， 如禁带宽度、 掺杂浓度等， 故通过调节相应的特性参数以实现变 压。 进一步地， 可以根据实际需要， 通过调整电光转换层 102和光电转换层 110的数目比 以提高变压幅度， 实现预期变压， 例如， 如图 7所示， 半导体变压结构包括一个电光转 换层 102和两个光电转换层 1 10A和 110B ,该结构相对于包含相同单个电光转换层和单 个光电转换层的半导体变压结构， 增加了垂直结构的变压， 故变压比更大。
在本发明的一个实施例中， 将第一电极层 100、 形成在第一电极层 100之上的电光 转换层 102、以及形成在电光转换层 102之上的第二电极层 104作为一个电光转换结构； 同理将第三电极层 108、 形成在第三电极层 108之上的光电转换层 110、 以及形成在光 电转换层 1 10之上的第四电极层 1 12作为一个光电转换结构。 该半导体直流光电变压器 还可以在垂直方向上包括多层交替堆叠的电光转换结构和光电转换结构。每相邻的电光 转换结构和光电转换结构之间包括隔离层， 以进一步提高直流电压变压比。 其中， 多个 电光转换结构 （或多个光电转换结构）相互串联， 每个电光转换结构 （或每个光电转 换结构）的结构可以参考上述实施例所述的结构。 图 8所示为在垂直方向上具有两个电 光转换结构和一个光电转换结构的半导体直流光电变压器结构示意图， 其中， 电光转换 结构和光电转换结构之间分别包括第一隔离层 106和第二隔离层 107。 需指出的是， 在 该结构中， 除首个和末个电光（或光电）转换结构之外， 中间每个电光转换结构和光电 转换结构的第一电极层和第四电极层不能选用金属电极， 而选用与第二和第三电极层相 同的重掺杂的半导体材料 GaAs、 GaN、 GaP , AlGaInP、 AlGalnN, AlGalnAs, 或者导 电透明金属氧化物材料 ITO、 Sn02、 ZnO及其组合， 从而有利于光线传播。 本发明提供一种半导体变压结构，通过在半导体变压结构的输入端设置电光转换层， 利用半导体电子能级间跃迁产生的光辐射， 将直流电转换为光进行传输， 在输出端设置 光电转换层以将光转化为电能输出， 由于输入端与输出端单位单元的电压分别取决于电 光转换层和光电转换层材料的特性参数及数目， 故该变压器可直接实现直流电压的变压。 现有技术的利用材料隔离的半导体变压结构， 需要先在牺牲衬底上分别形成半导体 光电 /电光转换结构，然后剥离牺牲衬底，将半导体光电 /电光转换结构转移到隔离层上， 然后进行刻蚀及连线， 其工艺复杂， 生产效率较低。 而在本发明的实施例中， 由于隔离 层釆用半导体材料， 其晶格常数等物理参数与半导体电光转换结构以及半导体光电转换 结构相近， 因此本发明的半导体变压结构中的隔离层有可能直接作为衬底材料， 或者通 过外延形成隔离层后， 在隔离层上再外延光电或电光结构， 整个半导体变压结构通过双 面外延或单面外延工艺形成， 免去剥离转移等步骤， 具有易于实现， 免牺牲衬底、 生产 效率较高， 成本较低的优点。 具体地，
双面外延工艺形成本发明半导体变压结构的过程如图 9所示：
5101.提供衬底。 该衬底为对工作光线透明的半导体材料， 在最终成型的半导体变压 结构中相当于隔离层 3。 衬底的两个侧面均做抛光处理， 可用于双面外延生长。
5102.在衬底的一个侧面上外延形成半导体电光转换结构层 10。
5103.在衬底的另一个侧面上外延形成半导体光电转换结构层 20。
5104.对半导体电光转换结构层 10刻蚀分割和沉积电极， 以形成一个或多个半导体 电光转换结构 1 ,然后利用平面金属化工艺将半导体电光转换结构 1进行串联和 /或并联。
5105.对半导体光电转换结构层 20刻蚀分割和沉积电极， 以形成一个或多个半导体 光电转换结构 2 ,然后利用平面金属化工艺将半导体光电转换结构 2进行串联和 /或并联。
需要说明的是， 上述形成方法中， 步骤 S204和步骤 S205的顺序可以调换， 两种方 式并无本盾差别。 以及， 需要说明的是， 为了形成起电气隔离作用的 PN结结构， 需要 在合适的时候对合适的材料层进行掺杂、 注入等处理（例如： 双面外延形成本发明第三 实施例的半导体变压结构， 需要在步骤 S 101 中提供具有多层掺杂层的衬底） 。 该处理 的技术细节灵活多样， 但属于本领域一般技术， 故不赘述。
在本发明的一些实施例中， 隔离层的厚度可能较薄， 不能以隔离层为衬底做双面外 延工艺。 此时， 可釆用单面外延工艺。
单面外延工艺形成本发明半导体变压结构的过程如图 10所示：
5201.提供衬底。 衬底单面抛光， 用于进行单面外延生长。
5202.在衬底上外延形成半导体电光转换结构层 10。
5203.在半导体电光转换结构层 10上外延形成隔离层 3。
5204.在隔离层 3上形成半导体光电转换结构层 20。 5205. 对半导体电光转换结构层 10和半导体光电转换结构层 20进行刻蚀， 分割以 形成一个或多个半导体电光转换结构 1和一个或多个半导体光电转换结构 2。
5206. 通过沉积电极、 平面金属化等工艺， 将半导体电光转换结构 1进行串和 /或并 联， 以及将半导体光电转换结构 2进行串和 /或并联。
需要说明的是， 上述形成方法中， 步骤 S202-S303和步骤 S205-S206的顺序可以调 换， 两种方式并无本盾差别。 以及， 需要说明的是， 为了形成起隔离作用的反偏 PN结 结构， 需要在合适的时候对合适的材料层进行掺杂、 注入等处理（例如： 双面外延形成 本发明第三实施例的半导体变压结构，需要在步骤 S 101中提供具有多层掺杂层的衬底）。 该处理的技术细节灵活多样， 但属于本领域一般技术， 故不赘述。
本发明提供的半导体变压结构， 通过在半导体变压结构的输入端设置电光转换层， 利用半导体电子能级间跃迁产生的光辐射， 将电转换为光进行传输， 在输出端设置光电 转换层以将光转化为电输出，输入端与输出端直接釆用半导体材料的隔离层（或衬底层）, 依靠反偏 PN结结构来实现电气隔离， 大大扩展了隔离层 （或衬底层） 的选择范围， 具 有易于获得、 成本低廉、 折射率匹配更优的优点。 此外， 由于本发明的半导体变压结构的隔 离层可通过外延形成结晶结构， 其上还可以进一步外延其它半导体结构， 避免了剥离、 键合 ( bonding )等复杂工序， 进一步降低了生产成本， 使大规模制造成为可能。
本发明还提出一种芯片， 该芯片包括至少一个上述任一种半导体变压结构， 该半导 体变压结构用于将外部电源的输入电压转变为芯片内的各个电路功能模块所需的特定 工作电压。具体地，如图 1 1所示，本发明的芯片除上述任一种半导体变压结构 100外， 还包括： 衬底 200 , —个或多个电源管脚 300、 片内电源分布网络 400 以及电路功能模 块 500。其中， 电源管脚 300与外部电源相连； 片内电源分布网络 400连接电源管脚 300 和至少一个半导体变压结构 100的输入端， 从而实现半导体变压结构 100的输入端接入 外部电源； 半导体变压结构 100的输出端则与需要供电的电路功能模块 500相连， 为其 提供工作所需的电能。其中，电路功能模块 500是指集成在同一芯片上的数字逻辑电路、 模拟电路、 RF 电路、 flash电路、 MEMS器件等需要不同电压的模块。 比如 flash芯片 上就需要多组不同的供电电压， 电压值跨度可达 1.2V-20V, 尤其是其写入编程电压， 往 往需要 10-20V。
在本发明一个实施例中， 该芯片还包括： 至少一个控制模块 600 , 控制模块 600与 至少一个半导体变压结构 100相连， 并对其进行控制。 具体地， 控制模块 600可对半导 体变压结构 100的输入输出端的电流电压进行釆样和控制， 以实现电压调节、 稳压、 电 源效率优化、 电源节能关断等目标。
在本发明一个实施例中， 该芯片为全片集成。
本发明还有其它一些变形的实施方案， 例如利用三维芯片堆叠， 互连或键合技术把 实现电源直流变压的芯片和实现存储， 运算和 MEMS传感等功能的芯片集成在一起形 成一个完整的系统， 或者是通过系统级封装把实现直流变压的芯片和其他功能模块封装 在一起形成一个系统。
根据本发明实施例的芯片由于其内部的半导体变压结构可以通过外延形成， 故可以 很方便地与其他部件进行集成， 具有工艺成熟， 成本较小， 筒化电源方案， 可实现全片集成 的优点。
尽管已经示出和描述了本发明的实施例， 对于本领域的普通技术人员而言， 可以理 解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、 修改、 替换 和变型， 本发明的范围由所附权利要求及其等同限定。

Claims

权利要求书
1、 一种半导体变压结构， 其特征在于， 包括：
一个或多个半导体电光转换结构， 所述半导体电光转换结构包括电光转换层， 所述 电光转换层用于将输入电能转换为光能； 和
一个或多个半导体光电转换结构， 所述半导体电光转换结构包括光电转换层， 所述 光电转换层用于将所述光能转换为输出电能，
其中， 所述光电转换层的吸收光谱与所述电光转换层的发射光谱之间频谱匹配， 其中， 所述半导体电光转换结构、 所述半导体光电转换结构之间通过反偏 PN结结 构进行隔离。
2、 如权利要求 1 所述的半导体变压结构， 其特征在于， 所述半导体电光转换结构 和所述半导体光电转换结构为多个且相互串联， 且所述半导体光电转换结构的数目与所 述半导体电光转换结构的数目成比例。
3、 如权利要求 1或 2所述的半导体变压结构， 其特征在于， 还包括：
隔离层， 所述隔离层为半导体， 且所述隔离层为第一掺杂类型，
其中， 所述半导体电光转换结构形成在所述隔离层一侧， 所述半导体光电转换结构 形成在所述隔离层另一侧， 所述隔离层对所述电光转换层的发射光透明，
其中， 所述隔离层与所述半导体电光转换结构之间以及所述隔离层与所述半导体光 电转换结构之间具有第二掺杂类型的掺杂区， 所述隔离层与所述掺杂区形成的 PN结呈 反偏状态。
4、 如权利要求 1或 2所述的半导体变压结构， 其特征在于， 还包括：
隔离层， 所述隔离层为半导体， 且所述隔离层为第一掺杂类型，
其中， 所述半导体电光转换结构形成在所述隔离层一侧， 所述半导体光电转换结构 形成在所述隔离层另一侧， 所述隔离层所述电光转换层的发射光透明，
其中， 所述半导体电光转换结构包括第一半导体掺杂层、 所述电光转换层和第二半 导体掺杂层， 所述第二半导体掺杂层与所述隔离层接触， 并且所述第一半导体掺杂层为 第一掺杂类型， 所述第二半导体掺杂层为第二掺杂类型， 所述隔离层与所述第二半导体 掺杂层形成的 PN结呈反偏状态，
其中， 所述半导体光电转换结构包括第三半导体掺杂层、 所述光电转换层和第四半 导体掺杂层， 所述第四半导体掺杂层与所述隔离层接触， 并且所述第三半导体掺杂层为 第一掺杂类型， 所述第四半导体掺杂层为第二掺杂类型， 所述隔离层与所述第四掺杂层 形成的 PN结呈反偏状态。
5、 如权利要求 1或 2所述的半导体变压结构， 其特征在于， 还包括：
隔离层， 所述隔离层为半导体， 其中， 所述半导体电光转换结构形成在所述隔离层一侧， 所述半导体光电转换结构 形成在所述隔离层另一侧， 所述隔离层所述电光转换层的发射光透明，
其中， 所述隔离层具有多个半导体掺杂层， 并且所述多个半导体掺杂层中至少两组 相邻的所述半导体掺杂层掺杂类型相反， 以形成至少两组 PN结， 其中， 所述 PN结呈 反偏状态。
6、 如权利要求 1或 2所述的半导体变压结构， 其特征在于， 还包括：
衬底层， 所述衬底层为半导体， 且所述衬底层为第一掺杂类型，
其中， 所述半导体光电转换结构和所述半导体电光转换结构形成在所述衬底层的同 一侧， 所述衬底层对所述电光转换层的发射光透明， 且所述衬底层底部具有反光结构， 其中， 所述衬底层与所述半导体电光转换结构之间以及所述衬底层与所述半导体光 电转换结构之间具有第二掺杂类型的掺杂区， 所述衬底层与所述掺杂区形成的 PN结呈 反偏状态。
7、 如权利要求 1-6 中任一项所述的半导体变压结构， 其特征在于， 光线传播路径 上的各层材料的折射系数匹配。
8、 如权利要求 1-6中任一项所述的半导体变压结构， 其特征在于， 还包括： 光学陷阱， 所述光学陷阱用于将光限制在所述半导体变压结构内部， 以防止光泄露 引起的能量损失。
9、如权利要求 1所述的半导体变压结构， 其特征在于， 所述电光转换层的材料为： AlGalnP , GaN, InGaN, InGaN, AlGalnN, ZnO, AlGalnAs, GaAs, InGaAs, InGaAsP , AlGaAs , AlGalnSb , InGaAsNSb以及其它 III族氮系化合物、 III族砷系或磷系化合物半 导体材料及其组合， 有机发光材料或量子点发光材料。
10、如权利要求 1所述的半导体变压结构，其特征在于，所述光电转换层的材料为： AlGalnP, InGaAs、 InGaN、 AlGalnN, InGaAsP, GaAs, GaSb , InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP , InAlP , AlGaAsSb , InGaAsNSb , 其它 III-V族直接禁带半导体材料及 其组合， 有机光伏材料或量子点光伏材料。
11、 如权利要求 3-6中任一项所述的半导体变压结构， 其特征在于， 所述隔离层或 衬底层的材料包括 GaP, GaAs, InP, GaN, Si, Ge, GaSb以及其它对工作光线透明的 半导体材料及其组合。
12、 如权利要求 1-11 任一项所述的半导体变压结构， 其特征在于， 所述半导体变 压结构通过双面外延或单面外延工艺实现。
13、 一种芯片， 其特征在于， 包括权利要求 1-12中任一项所述的半导体变压结构， 所述半导体变压结构用于将外部电源的输入电压转变为所述芯片上其他部件所需的特 定工作电压。
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