WO2013042907A2 - Alvéole pour essai de semiconducteurs - Google Patents

Alvéole pour essai de semiconducteurs Download PDF

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Publication number
WO2013042907A2
WO2013042907A2 PCT/KR2012/007415 KR2012007415W WO2013042907A2 WO 2013042907 A2 WO2013042907 A2 WO 2013042907A2 KR 2012007415 W KR2012007415 W KR 2012007415W WO 2013042907 A2 WO2013042907 A2 WO 2013042907A2
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
insulation
reinforcement line
fibers
socket
Prior art date
Application number
PCT/KR2012/007415
Other languages
English (en)
Korean (ko)
Other versions
WO2013042907A3 (fr
Inventor
신종천
하동호
Original Assignee
Shin Jong Cheon
Ha Dong Ho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=47073739&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2013042907(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Jong Cheon, Ha Dong Ho filed Critical Shin Jong Cheon
Publication of WO2013042907A2 publication Critical patent/WO2013042907A2/fr
Publication of WO2013042907A3 publication Critical patent/WO2013042907A3/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to semiconductor test sockets and, more particularly, to semiconductor test sockets that reduce damage caused by semiconductor leads.
  • the semiconductor test socket (Socket) is used to test the electrical signal of the semiconductor component in the non-destructive state.
  • the conductive contact portion of the semiconductor and the upper end of the socket are pressed at an appropriate pressure, so that the anisotropic lower part of the semiconductor test socket forms a conductive path with the PCB, thereby making electrical signal flow.
  • the semiconductor test socket should be less than several hundred m ⁇ per conductive pin for conducting the electrical signal flow, and the socket should have more than tens of thousands of repeated contacts.
  • BGA Ball which is a conductive part of semiconductor, prevents the rubber film from falling off / damage and TSOP (Thin Small Outline Package Package) with terminals (lead) on the outside of the body, or flat terminal with flat terminal on the bottom of the body.
  • TSOP Thin Small Outline Package Package
  • the silicon rubber and the conductive powder of the semiconductor test socket are pushed outwards to the outside as much as the volume pressed. At this time, the silicon is contacted by the contact between the socket and the semiconductor terminal. The conductive powder is easily released from the rubber.
  • due to the nature of the semiconductor package has a problem that the silicon rubber film is easily damaged because the cross section in contact with the semiconductor inspection socket is sharp.
  • the present invention forms an insulating reinforcement line in the same direction as the semiconductor terminal, that is, in a direction in which the semiconductor inspection socket is expanded in volume, and when the semiconductor is pressed against the contact surface of the semiconductor inspection socket, the silicon rubber of the semiconductor inspection socket is equal to the volume of the semiconductor terminal.
  • the conductive powder is pushed outwards to minimize the damage of the silicone rubber film due to friction of the contact portion.
  • a semiconductor test socket may include: a conductive silicon part formed in an area in which a lead of a semiconductor device contacts; An insulating silicon part formed in a region where the lead of the semiconductor device is not in contact with the conductive silicon part to serve as an insulating layer; And at least one insulation reinforcement line formed in an area in contact with the lead of the conductive silicon portion.
  • the semiconductor test socket includes a support reinforcement line disposed in the second direction so that the insulation reinforcement line is disposed in the first direction and passes through the center region of the insulation reinforcement line.
  • the semiconductor test socket has a structure in which the insulation reinforcement line is disposed in the first direction and the center region of the insulation reinforcement line is disconnected in the second direction.
  • the semiconductor test socket further includes a side support reinforcement line coupled to one end of the plurality of insulation reinforcement lines in a second direction.
  • the side support reinforcement line is a structure arranged to cross the sock end of the adjacent insulation reinforcement line.
  • the insulation reinforcement line and the support reinforcement line are perpendicular to each other.
  • the insulation reinforcement line is adjusted to correspond to the spacing between the leads of the semiconductor element is formed on the surface region of the conductive silicon portion.
  • the insulation reinforcing wire has a width of 0.05 to 0.15mm, an interval of 0.15 to 0.25mm, a thickness of 0.05 to 0.3mm.
  • the insulation reinforcing wire is composed of polytetrafluoroethylene-based fluorine resin fibers, aramid fibers, polyimide fibers, polyacrylate-based fibers, nylon fibers, or nanofibers.
  • the support reinforcing wire is composed of polytetrafluoroethylene-based fluorine resin fibers, aramid fibers, polyimide fibers, polyacrylate-based fibers, nylon fibers, or nanofibers.
  • the insulation reinforcement wire is formed on one surface of the socket in an equilibrium in one direction so that the insulation reinforcement wire is pressed together as the lead of the semiconductor element is pressed, so that the conductive powders around the insulation reinforcement wire are relatively affected by pressure. Since the free contact with the lead, the contact area is increased according to the contact pressure to improve the contact resistance.
  • the insulating reinforcing wire is pressed together when the conductive powder of the semiconductor contact terminal and the socket contacts, so that a relatively large area is pressed against the conductive powder, thereby maintaining a stable shape. It can minimize and improve the repetitive contact life as compared to the prior art.
  • FIG. 1 is a side view of a semiconductor test socket according to an exemplary embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a semiconductor test socket according to an exemplary embodiment of the present invention.
  • FIG 3 is an enlarged view of a semiconductor test socket according to an exemplary embodiment of the present invention.
  • FIG. 1 is a side view of a semiconductor test socket according to an exemplary embodiment of the present invention.
  • a semiconductor test socket according to an exemplary embodiment of the present invention will be described with reference to FIG. 1.
  • the semiconductor test socket includes a conductive silicon part 110, an insulating silicon part 120, and an insulation reinforcement line 130.
  • the conductive silicon portion 110 is formed in a region where the lead 140 of the semiconductor device contacts.
  • the insulating silicon portion 120 is formed in a region where the lead 140 of the semiconductor device does not contact to support the conductive silicon portion 110 to serve as an insulating layer.
  • At least one insulation reinforcement line 130 is formed on a surface area in contact with the lead 140 of the conductive silicon part 110.
  • the insulation reinforcement line 130 may be formed on the surface area of the conductive silicon portion 110 and may be adjusted to correspond to a gap between the leads 140 of the semiconductor device.
  • the semiconductor inspection socket according to the present invention prevents the conductive silicon portion 110 from being easily damaged by the sharp lead 140 by employing the insulation reinforcement line 130. That is, when the conductive silicon portion 110 is pressed by the lead 140, the semiconductor lead is stably pressed by the insulation reinforcement line 130. Therefore, according to the present invention, the insulating reinforcing wire is pressed together when the conductive powder of the semiconductor contact terminal and the socket is contacted, so that a relatively large area is pressed against the conductive powder, thereby maintaining a stable shape, thereby minimizing deformation of the conductive powder. It is possible to improve the repeat contact life as compared to the prior art.
  • the semiconductor test socket according to the present invention makes electrical contact with the lead 140 of the semiconductor device more stably, and also improves the life due to the repeated contact.
  • a more stable electrical contact is made at a lower pressure than in the prior art, thereby improving lifespan due to repeated contact, and reducing the defective inspection rate of the semiconductor test socket.
  • FIG. 2 is a diagram illustrating a semiconductor test socket according to an exemplary embodiment of the present invention.
  • the semiconductor test socket includes an insulation reinforcement line 130 formed of an insulation material on a semiconductor contact surface including the conductive silicon portion 110 and the insulating silicon portion 120. Form horizontally.
  • the insulation reinforcement line 130 when the insulation reinforcement line 130 is horizontally formed, when the lead of the semiconductor element is pressed on the conductive silicon portion 110 of the semiconductor test socket, when the insulation reinforcement line 130 is formed in a mesh form In comparison, relatively little force can be used to make contact with the lead and the conductive powder. Therefore, according to the present invention, it is possible to reduce the phenomena such as damage to the wafer or the lifting of the bond by preventing excessive force from being applied to the thinned and highly integrated semiconductor, and also to improve the life of the semiconductor inspection socket.
  • the insulation reinforcement line 130 is configured by using an insulation that is stable in electrical insulation, temperature, and chemical properties.
  • FIG 3 is an enlarged view of a semiconductor test socket according to an exemplary embodiment of the present invention, and more specifically, the width of the insulation reinforcement line 130 is 0.12 mm, the distance 0.2 mm, and the thickness. ) Shows an example in which 0.1 mm is configured.
  • Insulation reinforcing wire 130 uses an excellent electrical, thermal, and chemical properties, such insulation, polytetrafluoroethylene-based fluorine resin fibers, aramid fibers, polyimide (Polyimide) fibers, polyacrylate-based, nylon fibers, nano fibers and the like can be used.
  • the insulation reinforcement wire 130 has a width of the insulation reinforcement wire 130 at a thickness of 0.05 to 0.15 mm, an interval of the insulation reinforcement wire 130 at a thickness of 0.15 to 0.25 mm, and an insulation reinforcement wire 130 according to the distance between the contact leads of the semiconductor to be inspected. ), It is preferable to adjust the thickness to 0.05 to 0.3 mm.
  • According to another embodiment of the present invention may be configured to further include a support reinforcement line 135 connecting the insulation reinforcement line 123 as shown in FIGS. 4, 5 and 6.
  • the support reinforcement line 135 is configured to cross the plurality of insulation reinforcement lines 130 on the surface area of the insulated silicon portion, and the insulation reinforcement line 130 is made of polytetrafluoroethylene-based fluorocarbon fiber, aramid fiber, and poly Polyimide fibers, polyacrylates, nylon fibers, nanofibers and the like can be composed.
  • the support reinforcement line 135 may be configured such that the support reinforcement line 135 is formed only in the central portion.
  • the support reinforcement line 135 may be disposed in the second direction so as to pass through the center region of the insulation reinforcement line 130.
  • the central region is a concept including an inner region excluding the sock end in the arrangement structure of the insulation reinforcement line 130.
  • the central region of the support reinforcement line 135 is disconnected, and the support reinforcement line 135 is formed at one end of the plurality of insulation reinforcement lines 130.
  • Combination in the second direction can be configured to form a 'c' letter.
  • the support reinforcement line 135 is disposed to cross the sock end of the neighboring insulation reinforcement line 130, the insulation reinforcement line 130 and the support
  • the reinforcement line 135 may be disposed to be orthogonal to each other. That is, the structure arranged to cross is a structure in which the support reinforcement line 135 connects the insulation reinforcement line 130 and is arranged in a zigzag form, such as' ′, as shown in FIG. 6.
  • the insulation reinforcement wire is formed on one surface of the socket in an equilibrium in one direction so that the insulation reinforcement wire is pressed together as the lead of the semiconductor element is pressed, so that the conductive powders around the insulation reinforcement wire are affected by pressure. Relatively free contact with the lead.
  • the contact area increases with an increase in contact pressure as compared with the related art, thereby improving contact resistance, thereby achieving more stable electrical contact even at a pressure of 10 to 20% less. Therefore, according to the present invention, it is possible to improve the life of the semiconductor test socket due to the repeated contact, and to reduce the defective test rate of the semiconductor test socket.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Connecting Device With Holders (AREA)

Abstract

La présente invention concerne un alvéole pour essai de semiconducteurs comportant une partie conductrice au silicium formée dans une région où un fil pour dispositif à semiconducteur est en contact ; une partie isolante au silicium formée dans une région où le fil pour dispositif à semiconducteur n'est pas en contact, de façon à soutenir la partie conductrice au silicium, et servant de couche isolante ; et au moins une ligne isolante de renfort formée dans une région où le fil de la partie conductrice au silicium est en contact. Lorsqu'un semiconducteur est plaqué contre une surface de contact de l'alvéole pour essai de semiconducteurs, un caoutchouc au silicium de l'alvéole pour essai de semiconducteurs et des poudres conductrices sont chassés dans toutes les directions, ce qui permet de minimiser les dommages occasionnés au film de caoutchouc par le frottement de la partie de contact.
PCT/KR2012/007415 2011-09-23 2012-09-17 Alvéole pour essai de semiconducteurs WO2013042907A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110096121A KR101179545B1 (ko) 2011-09-23 2011-09-23 반도체 검사 소켓
KR10-2011-0096121 2011-09-23

Publications (2)

Publication Number Publication Date
WO2013042907A2 true WO2013042907A2 (fr) 2013-03-28
WO2013042907A3 WO2013042907A3 (fr) 2013-05-23

Family

ID=47073739

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007415 WO2013042907A2 (fr) 2011-09-23 2012-09-17 Alvéole pour essai de semiconducteurs

Country Status (3)

Country Link
KR (1) KR101179545B1 (fr)
TW (1) TWI453438B (fr)
WO (1) WO2013042907A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107024605A (zh) * 2016-01-29 2017-08-08 泰克元有限公司 测试分选机用插接件

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102229229B1 (ko) * 2015-06-17 2021-03-18 (주)테크윙 테스트핸들러용 인서트
KR101849623B1 (ko) * 2016-08-18 2018-04-17 오재숙 반도체 칩 테스트용 소켓의 접지 구조체 및 이를 구비한 반도체 칩 테스트용 소켓
KR101865257B1 (ko) 2016-12-28 2018-06-07 부경대학교 산학협력단 반도체 소자 테스트용 소켓
TWI654435B (zh) 2017-10-06 2019-03-21 吳在淑 半導體晶片測試用之插座的接地結構及測試包括該接地結構之半導體晶片的插座
KR102114110B1 (ko) * 2018-08-28 2020-05-25 주식회사 이노글로벌 양방향 도전성 모듈 및 이의 제조방법
KR102036105B1 (ko) * 2018-11-06 2019-10-24 (주)티에스이 신호 전송 커넥터

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KR100681156B1 (ko) * 2006-01-25 2007-02-09 삼성전자주식회사 전기적 검사 장치용 소켓
KR101004296B1 (ko) * 2008-07-07 2010-12-28 주식회사 아이에스시테크놀러지 전도성 와이어를 가진 테스트 소켓
KR20110004324A (ko) * 2009-07-06 2011-01-13 리노공업주식회사 반도체 칩 검사용 소켓
KR101019721B1 (ko) * 2008-11-11 2011-03-07 주식회사 아이에스시테크놀러지 기둥형 입자를 가지는 테스트 소켓

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JP2000065891A (ja) 1998-08-18 2000-03-03 Seiko Epson Corp 電気的特性測定装置
TWI518340B (zh) * 2009-08-27 2016-01-21 李諾工業股份有限公司 半導體晶片測試插座

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
KR100681156B1 (ko) * 2006-01-25 2007-02-09 삼성전자주식회사 전기적 검사 장치용 소켓
KR101004296B1 (ko) * 2008-07-07 2010-12-28 주식회사 아이에스시테크놀러지 전도성 와이어를 가진 테스트 소켓
KR101019721B1 (ko) * 2008-11-11 2011-03-07 주식회사 아이에스시테크놀러지 기둥형 입자를 가지는 테스트 소켓
KR20110004324A (ko) * 2009-07-06 2011-01-13 리노공업주식회사 반도체 칩 검사용 소켓

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107024605A (zh) * 2016-01-29 2017-08-08 泰克元有限公司 测试分选机用插接件
CN107024605B (zh) * 2016-01-29 2019-10-22 泰克元有限公司 测试分选机用插接件

Also Published As

Publication number Publication date
TWI453438B (zh) 2014-09-21
TW201319597A (zh) 2013-05-16
KR101179545B1 (ko) 2012-09-05
WO2013042907A3 (fr) 2013-05-23

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