WO2013035298A1 - Dispositif d'affichage et procédé pour sa fabrication - Google Patents

Dispositif d'affichage et procédé pour sa fabrication Download PDF

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Publication number
WO2013035298A1
WO2013035298A1 PCT/JP2012/005560 JP2012005560W WO2013035298A1 WO 2013035298 A1 WO2013035298 A1 WO 2013035298A1 JP 2012005560 W JP2012005560 W JP 2012005560W WO 2013035298 A1 WO2013035298 A1 WO 2013035298A1
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Prior art keywords
display device
layer
conductive
separation layer
manufacturing
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PCT/JP2012/005560
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English (en)
Japanese (ja)
Inventor
健司 御園
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シャープ株式会社
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Publication of WO2013035298A1 publication Critical patent/WO2013035298A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133382—Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

Definitions

  • the present invention relates to a display device and a method for manufacturing the display device.
  • TFT thin film transistor
  • the TFT substrate body is formed of a highly heat-resistant material such as glass, there are limits to the reduction in thickness, weight, and flexibility.
  • the TFT substrate body in order to enable the TFT substrate body to be formed even with a support base material that is weak in heat resistance, for example, after forming a TFT or the like on a glass plate, a method of sticking the support base material after peeling the glass plate is adopted. ing.
  • a separation layer is formed on a glass plate, a transfer layer such as a TFT element is formed on the separation layer, and a transfer body (flexible support base material) is formed on the transfer layer via an adhesive layer. ), The separation layer is irradiated with laser light from the glass plate side to peel the glass plate and the separation layer from the layer to be transferred, and the layer to be transferred (TFT layer) is laminated on the flexible support substrate Manufacturing a thin film device substrate is described.
  • Non-Patent Document 1 discloses a method for manufacturing an active matrix type organic EL display device formed on a plastic substrate.
  • a conductive layer is formed on the entire surface between a plastic substrate having an organic EL element formed on the main surface and a glass plate.
  • an organic EL display device is obtained by peeling a conductive layer and a glass plate from a plastic substrate by a Joule heat peeling (JILO) process.
  • JILO Joule heat peeling
  • the Joule heat peeling (JILO) process is a process in which the conductive layer is peeled off by melting the surface of the plastic substrate with Joule heat generated by passing an electric current through the conductive layer.
  • the polyimide film is peeled from the glass plate, and at the same time, the surface layer of the polyimide film is burned by the laser, and the burn mark remains as debris (accumulated deposits) along the shape of the laser irradiation window. . Also, the polyimide vaporized by laser irradiation cannot escape from between the polyimide film and the glass plate, but adheres to the polyimide film and solidifies again, which also causes debris. Further, the processing marks due to these debris may cause deterioration of display quality and optical characteristics such as contrast.
  • Non-Patent Document 1 since a conductive layer is provided on the entire surface between the glass plate and the polyimide film, it is difficult to flow a current uniformly through the conductive film due to variations in the interface state between the conductive film and the polyimide film. There is a possibility that the Joule heat generated by the region varies. Specifically, there is a difference in the timing at which the polyimide melts depending on the location, and the polyimide that has been melted into a liquid state gathers at the melted location at an early stage due to surface tension. The collected polyimide liquid is further heated to evaporate into a gas, so that portion becomes melting marks, and there is a risk of deterioration in display quality and optical characteristics such as contrast.
  • the present invention suppresses the processing marks from remaining on the polyimide film in the step of peeling the glass plate from the polyimide film after forming the polyimide film and TFT provided on the glass plate, and has excellent contrast performance.
  • the object is to obtain a device.
  • a method for manufacturing a display device includes forming a conductive layer formed by insulating a plurality of conductive films through an insulating film on a heat-resistant substrate, and then covering the conductive layer. Forming a separation layer, and then forming a display device layer on the separation layer; and after the first step, current is passed through each of the plurality of conductive films to generate Joule heat. And a second step of melting or thermally decomposing the surface of the separation layer in contact with the conductive layer by the Joule heat and peeling the conductive layer and the heat-resistant substrate from the separation layer.
  • the conductive layer and the heat-resistant substrate are peeled from the separation layer by melting or thermally decomposing the surface of the separation layer, so that a laser processing shape is formed on the separation layer as in the case of using a laser. There is no remaining processing mark along.
  • the surface of the separation layer can be uniformly melted or decomposed, and it is possible to prevent melting marks from remaining in the separation layer. Therefore, deterioration of display quality and deterioration of optical characteristics such as contrast due to the presence of peeling processing marks or the like in the separation layer are suppressed.
  • the melting or thermal decomposition of the surface of the separation layer is performed by Joule heat, heat is not transmitted to the surface of the separation layer on the display device layer side. Therefore, deterioration of the characteristics of the display device layer due to heat for melting or thermally decomposing the separation layer is suppressed.
  • the magnitude of the voltage to be applied at one time can be made smaller than when a current is passed over the entire surface of the conductive layer. Simplification and suppression of electric shock accidents are possible.
  • the plurality of conductive films are positioned so as to be exposed on the surface of the conductive layer on the display device layer side, and the plurality of long upper conductive films arranged in parallel to each other. And a plurality of lower conductive films positioned in a corresponding region between the two adjacent upper conductive films so as to be exposed on the heat resistant substrate side surface of the conductive layer, and arranged in parallel with each other. It may be configured.
  • the conductive layer is formed such that each of the plurality of conductive films extends in a long shape and is arranged in parallel to each other, and the insulating film extends in a long shape and is adjacent to the conductive film.
  • a plurality of the conductive films may be arranged in parallel to each other in a corresponding region between the two conductive films.
  • the display device manufacturing method of the present invention forms a display device layer on a heat resistant substrate and then peels the heat resistant substrate. Therefore, the display device layer is a switching element layer in which a plurality of switching elements are arranged in a matrix. It is suitable for the case where a high-temperature step is included in the manufacturing process such as including.
  • the display device layer may have a configuration in which an organic EL element layer in which a plurality of organic EL elements are arranged corresponding to each of the plurality of switching elements is stacked on the switching element layer.
  • the display device manufacturing method includes a first heat-resistant substrate, a first conductive layer formed by insulating a plurality of conductive films on the first heat-resistant substrate via an insulating film, A first separation layer on one conductive layer, a switching element layer in which a plurality of switching elements are arranged in a matrix, and a plurality of pixels provided on the switching element layer and corresponding to each of the plurality of switching elements
  • a second stacked body comprising a display device layer including an electrode, a second heat-resistant substrate, and a plurality of conductive films on the second heat-resistant substrate insulated via an insulating film
  • a liquid crystal layer is formed in a space formed between the first and second display device layers, and the first conductive layer and the first heat-resistant substrate, and the second conductive layer and the second heat-resistant substrate are formed. You may peel from each of a 1st separated layer and a 2nd separated layer through the said 2nd process.
  • the separation layer is preferably formed of a material having a melting point or a thermal decomposition temperature of 400 to 700 ° C.
  • Such a separation layer is preferably formed of polyimide.
  • the display device since polyimide has excellent heat resistance and solvent resistance, a high temperature process can be performed in forming the display device layer.
  • the display device since polyimide has excellent bending resistance, the display device can be used as a flexible device or can be attached to another member that is not a flat plate. Further, when polyimide has excellent light transmittance, the display device can be a light transmission type liquid crystal display device.
  • the method for manufacturing a display device of the present invention may further include a third step of pasting a support base material on the exposed surface of the separation layer after the second step.
  • the above manufacturing method by attaching a support substrate to the exposed surface of the separation layer, the resistance to mechanical stress from the outside of the display device and the environmental resistance such as moisture barrier property and oxygen barrier property are improved. Can be made.
  • the laminate of the separation layer and the display device layer is formed without including a rigid body such as a glass substrate, a support base material of any shape can be affixed and display with a high degree of freedom in design A device can be obtained.
  • the display device of the present invention is manufactured through the first step and the second step, and the separation layer is formed of a material having a melting point or a thermal decomposition temperature of 400 to 700 ° C.
  • the display device of the present invention is suitable when the display device layer includes a switching element layer in which a plurality of switching elements are arranged in a matrix.
  • the separation layer is preferably formed of polyimide.
  • the display device of the present invention may further include a support base material on the surface of the separation layer opposite to the display device layer.
  • the conductive layer and the heat-resistant substrate are peeled from the separation layer by melting or thermally decomposing the surface of the separation layer, so that the laser processing shape is aligned on the separation layer as in the case of using a laser. No processing marks remain.
  • the surface of the separation layer can be uniformly melted or decomposed, and it is possible to prevent melting marks from remaining in the separation layer. Therefore, deterioration of display quality and deterioration of optical characteristics such as contrast due to the presence of peeling processing marks or the like in the separation layer are suppressed.
  • the melting or thermal decomposition of the surface of the separation layer is performed by Joule heat, heat is not transmitted to the surface of the separation layer on the display device layer side. Therefore, the deterioration of the characteristics of the display device layer due to the heat for melting or pyrolyzing the separation layer is suppressed.
  • the magnitude of the voltage applied per time can be made smaller than when a current is passed over the entire surface of the conductive layer, and the equipment is simplified. And electric shock accidents can be suppressed.
  • FIG. 1 is a cross-sectional view of an organic EL display device according to Embodiment 1.
  • FIG. 3 is a flowchart of a method for manufacturing the organic EL display device according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 1.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 1.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 1.
  • FIG. 3 is an explanatory diagram of a method for manufacturing the organic EL display device according to the first embodiment.
  • (A) And (b) is explanatory drawing of the manufacturing method of the organic electroluminescence display of the modification 1.
  • FIG. It is a schematic sectional drawing of the organic electroluminescence display of the modification 2.
  • It is sectional drawing of the organic electroluminescent display apparatus of Embodiment 2.
  • FIG. 10 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 2.
  • FIG. 10 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 2.
  • FIG. 10 is an explanatory diagram of a method for manufacturing the organic EL display device of Embodiment 2.
  • FIG. 6 is a schematic cross-sectional view of a liquid crystal display device of Embodiment 3.
  • FIG. 6 is an enlarged cross-sectional view of a main part of a liquid crystal display device of Embodiment 3.
  • FIG. 10 is a flowchart of a manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 3.
  • FIG. 10 is a flowchart of a manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4. It is explanatory drawing of the manufacturing method of the liquid crystal display device of Embodiment 4.
  • FIG. 1 shows an organic EL display device 100 according to the first embodiment.
  • the organic EL display device 100 is used as a display of a portable electronic device, a car navigation system, a television, or the like, for example.
  • the organic EL display device 100 has a configuration in which a display device layer is laminated on a separation layer 110 and is bonded to a support substrate 140 via an adhesive 141.
  • the display device layer includes a TFT element layer 120 as a switching element layer and an organic EL element layer 130.
  • a plurality of pixels are arranged in a matrix.
  • the organic EL display device 100 is a top emission type organic EL display device that takes out light from the side opposite to the support base 140 and displays an image.
  • the separation layer 110 is formed of a polyimide film.
  • the separation layer 110 has a thickness of 5 to 15 ⁇ m, for example.
  • the material constituting the separation layer 110 has heat resistance to a high-temperature process when forming the TFT element layer 120 and has a thermal decomposition temperature of about 400 to 700 ° C. Since the light extraction method of the organic EL display device is a top emission type, the polyimide constituting the separation layer 110 is not required to have light transmittance, and may be a transparent polyimide or an opaque polyimide. However, from the viewpoint of having a higher thermal decomposition temperature, opaque polyimide is preferable.
  • a TFT 121 switching element
  • a planarizing film 122 is provided so as to cover the plurality of TFTs 121.
  • the TFT 121 and the planarizing film 122 have a conventionally known configuration.
  • an organic EL element in which a lower electrode 131, an organic EL layer 132, and an upper electrode 133 are stacked is arranged corresponding to each of the plurality of TFTs 121, and these are covered with a sealing film 134. It has a configuration.
  • a plurality of lower electrodes 131 are provided corresponding to each pixel, and are electrically connected to a drain electrode (not shown) through a contact hole 133 provided in the planarization film 122.
  • an edge cover 135 is provided in a region partitioning each of the plurality of pixels so as to cover each peripheral edge of the lower electrode 131.
  • the sealing film 134 is formed of, for example, a laminated body of a silicon nitride film and a silicon oxide film, a paraxylylene-based polymer, or the like.
  • the support substrate 140 is formed of, for example, a flexible film or a rigid body.
  • the flexible film material include cycloolefin polymer, cycloolefin copolymer, polysiloxane composite, polycarbonate, polyethersulfone, polyarylate, polysulfone, polyetherimide, polyphenylene sulfide, polyamideimide, liquid crystal polyester, polyimide, Examples thereof include polyether ether ketone and coloring members thereof.
  • the rigid body include stainless steel (SUS) and glass epoxy resin.
  • the support substrate 140 can realize a thin display by setting the thickness including the adhesive 141 to 50 to 400 ⁇ m, for example.
  • the support substrate 140 can be formed of a material having a lower heat resistance than that required when forming the TFT.
  • the organic EL display device 100 when the TFT 121 is turned on, holes are injected from the first electrode 131 to the organic EL layer 132, and electrons are injected from the second electrode 133 to the organic EL layer 132. Holes and electrons are recombined in the light emitting layer of the organic EL layer 132. Due to recombination, the excited electrons return to the ground state while releasing energy, but the energy released at this time is extracted as light emission and is visually recognized as a desired image as a whole.
  • the conductive layer 160 is formed on the heat resistant substrate 150, the separation layer 110 is formed so as to cover the conductive layer 160, and the TFT element layer 120 and the organic EL element layer 130 are further formed as display device layers.
  • the heat resistant substrate 150 serves as a base support substrate for forming the TFT element layer 120 and the organic EL element layer 130, and is not included in the configuration of the finished product of the organic EL display device 100.
  • a glass plate such as non-alkali glass having a thickness of about 0.7 mm is prepared.
  • the heat-resistant substrate 150 has a size that allows a plurality of organic EL display devices 100 to be manufactured to be formed.
  • the conductive layer 160 is formed on the heat resistant substrate 150.
  • the conductive layer 160 includes an upper conductive film 161, a lower conductive film 162, and an insulating film 163.
  • the upper conductive film 161 is the uppermost layer
  • the lower conductive film 162 is the lowermost layer
  • the insulating film 163 is provided so as to insulate the upper conductive film 161 and the lower conductive film 162 from each other. It has been.
  • a plurality of upper conductive films 161 and a plurality of lower conductive films 162 are provided, and each of them is arranged in parallel with a space therebetween and is formed in a long shape.
  • the lower conductive film 162 is positioned in a corresponding region between the adjacent upper conductive films 161.
  • a titanium (Ti) film having a thickness of, for example, about 50 to 150 nm is formed by sputtering, and is patterned by photolithography so that long patterns having a width of about 5 to 30 ⁇ m are arranged in parallel.
  • a silicon nitride film, a silicon oxide film, or a laminated film thereof is formed by CVD to cover the lower conductive film 162, and is patterned to have a thickness of 150 to 400 nm.
  • An insulating film 163 is formed to a degree.
  • a titanium (Ti) film having a thickness of about 50 to 150 nm is formed by sputtering, and is patterned by photolithography so that long patterns having a width of about 100 to 300 mm are parallel to each other, and the upper conductive film 161 is formed.
  • the distance between adjacent upper conductive films 161 (a1 in FIG. 3) is set to, for example, 5 to 20 ⁇ m.
  • the upper conductive film 161 is arranged so that the side along the longitudinal direction (L1 in FIG. 4) overlaps the lower conductive film 162, and the side along the longitudinal direction is the lower side.
  • the lower conductive film 162 may be thicker than the upper conductive film 161. Since the lower conductive film 162 has a smaller area than the upper conductive film 161, the wiring resistances of both can be matched by increasing the thickness.
  • the material for forming the upper conductive film 161 and the lower conductive film 162 may be a titanium (Mo) film, a transparent conductive film, or the like.
  • a separation layer 110 is formed by forming a polyimide film so as to cover the conductive layer 160 by, for example, a slit coat method, a gravure coat method, a curtain coat method, a spin coat method, or the like. Since the organic EL display device 100 formed here is a top emission type, opaque polyimide is used as the polyimide.
  • the separation layer 110 has a thickness of 5 to 15 ⁇ m, for example.
  • the TFT element layer 120 is formed on the separation layer 110 using a known method. Specifically, for example, a base coat film, a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode are stacked in a predetermined layout, and a plurality of them are arranged in a matrix corresponding to each pixel. After the TFT 121 is formed, a planarizing film 122 is formed so as to cover them.
  • the semiconductor film an amorphous silicon ( ⁇ -Si) film, a low-temperature polysilicon (LTPS) film, an oxide semiconductor film (for example, an IGZO film), or the like can be formed.
  • contact holes 133 reaching the drain electrodes of the TFTs 121 from the surface of the planarizing film 122 are formed.
  • a high temperature process about 250 to 350 ° C. when the semiconductor film is an ⁇ -Si film, about 350 to 450 ° C. when the semiconductor film is an IGZO film, and an LTPS film at the time of baking after the film is formed
  • the TFT 121 is formed on the heat resistant substrate 150 and the separation layer 110, there is no possibility that the characteristics of each component are deteriorated by heat.
  • step S114 the organic EL element layer 130 is formed on the TFT element layer 120 using a known method. Specifically, after the lower electrode 131, the edge cover 135, the organic EL layer 132, and the upper electrode 133 are stacked, a sealing film 134 is stacked so as to cover them.
  • sealing film 145 may be formed so as to cover the entire surface of the substrate, or a plurality of sealing films 145 may be formed separately for each panel. Thereby, the laminated body shown in FIG. 5 is obtained.
  • step S121 the conductive layer 160 and the heat resistant substrate 150 are separated from the separation layer 110 by passing a current through the conductive layer 160 in step S121.
  • the upper conductive film 161 arranged so as to extend in parallel is referred to as the upper conductive films 161a, 161b, 161c, 161d from the end as shown in FIGS.
  • the conductive films 162e, 162f, and 162g are used.
  • the magnitude of the applied voltage is such that Joule heat equal to or higher than the decomposition temperature of the polyimide film can be applied to the surface of the polyimide film constituting the separation layer 110 at the interface between the separation layer 110 and the conductive layer 160.
  • a pulse voltage with a pulse width of about 50 to 150 milliseconds.
  • a voltage is applied to the uppermost upper conductive film 161a. Joule heat is generated by the current flowing through the upper conductive film 161a, and the thickness of the separation layer 110 corresponding to the upper conductive film 161a (the area indicated by 110a in FIG. 7) is about 1 ⁇ m from the surface of the polyimide film. This part is thermally decomposed, and the adhesion state of the separation layer 110 and the conductive layer 160 is released.
  • a predetermined voltage is applied to the upper conductive film 161b adjacent to the upper conductive film 161a, and in the region corresponding to the upper conductive film 161b (the region indicated by 110b in FIG. 7) in the separation layer 110, the separation is performed.
  • the adhesion state between the layer 110 and the conductive layer 160 is released.
  • a predetermined voltage is applied to the corresponding lower conductive film 162e between the upper conductive films 161a and 161b.
  • Joule heat is generated, and this Joule heat is transmitted through the upper insulating film 163 of the lower conductive film 162e to form a region corresponding to the lower conductive film 162e in the separation layer 110.
  • a portion having a thickness of about 1 ⁇ m from the surface of the polyimide film (region indicated by 110e in FIG. 7) is thermally decomposed, and the adhesive state between the separation layer 110 and the conductive layer 160 is released.
  • a predetermined voltage is sequentially applied to the upper conductive film 161c, the lower conductive film 162f, the upper conductive film 161d, and the lower conductive film 162g, and a portion having a thickness of about 1 ⁇ m from the surface of the polyimide film (
  • the regions indicated by 110c, 110f, 110d, and 110g in FIG. 7 are thermally decomposed to peel the conductive layer 160 from the separation layer 110 as shown in FIG.
  • the order of voltage application to the conductive films 161 and 162 described here is an example, and the voltage may be applied to the conductive films 161 and 162 in another order.
  • a voltage is applied in order from the conductive films 161 and 162 located on the end side of the substrate in order to make it difficult for gas generated when the polyimide is thermally decomposed to accumulate between the conductive layer 160 and the separation layer 110. It is preferable.
  • static electricity is generated by peeling charging when the conductive layer 160 is peeled off.
  • peeling off the conductive layer 160 in order from the end facilitates removal of static electricity, and the TFT element layer 120 and the organic EL element layer 130 are damaged by static electricity. From the viewpoint of suppressing this, it is preferable to apply a voltage in order from the conductive films 161 and 162 located on the end side of the substrate.
  • step S131 an adhesive 141 is applied to the surface of the separation layer 110 exposed by peeling the conductive layer 160 and the heat resistant substrate 150 in the second step, as shown in FIG.
  • the support base material 140 is pasted using it.
  • step S132 the mother substrate size formed product is divided into the size of the single organic EL display device 100, and in step S133, peripheral circuits such as LSI chips and flexible printed wiring boards (FPCs) are provided in the peripheral region. Is implemented. Thereby, the organic EL display device 100 is completed.
  • peripheral circuits such as LSI chips and flexible printed wiring boards (FPCs) are provided in the peripheral region. Is implemented. Thereby, the organic EL display device 100 is completed.
  • the conductive layer 160 and the heat-resistant substrate 150 are peeled from the separation layer 110 by thermally decomposing a portion having a thickness of about 1 ⁇ m including the surface of the separation layer 110, so that a laser is used. Processing traces along the laser processing shape do not remain on the separation layer 110.
  • the portion including the surface of the separation layer 110 can be thermally decomposed uniformly, and the separation layer 110 has uneven thermal decomposition. Is suppressed from remaining. Accordingly, display quality deterioration and deterioration of optical characteristics such as contrast due to the presence of peeling process marks and thermal decomposition unevenness in the separation layer 110 are suppressed.
  • the thermal decomposition of the surface of the separation layer 110 is performed by Joule heat, heat is not transmitted to the surface of the separation layer 110 on the TFT element layer 120 side. Therefore, deterioration of the characteristics of the TFT element layer 120 and the organic EL element layer 130 due to heat that thermally decomposes the separation layer 110 is suppressed.
  • the voltage applied per time is larger than when current is passed through the entire surface of the conductive layer 160.
  • the size can be reduced, and facilities can be simplified and electric shock accidents can be suppressed.
  • the upper conductive film 161 and the lower conductive film 162 are arranged in parallel with each other in the conductive layer 160.
  • Each of the conductive film 161 and the lower conductive film 162 may be U-shaped.
  • a voltage is applied to the uppermost conductive film 161 as shown in FIG. 10 (a), and then a voltage is applied to the lowermost conductive film 162 as shown in FIG. 10 (b).
  • the conductive layer 160 and the heat resistant substrate 150 can be peeled from the separation layer 110 by applying and repeating the steps in order.
  • the support substrate 140 is described as having a flat plate shape.
  • the laminate of the separation layer 110, the TFT element layer 120, and the organic EL element layer 130 is flexible. Therefore, various shapes of rigid bodies can be affixed as a support base material.
  • the organic EL display device 100 of the present invention is also suitable when the support base 140 is a rigid body having a curve (for example, a side surface of a cylinder, etc.) as shown as Modification 2 in FIG. Furthermore, it is good also as a flexible display, without sticking a support base material on the surface which the separation layer 110 exposed.
  • the light extraction method is described for the top emission type organic EL display device 100, but even the bottom emission type organic EL display device may be another light extraction method organic EL display device. It doesn't matter.
  • FIG. 12 shows an organic EL display device 200 according to the second embodiment.
  • the organic EL display device 200 is used as a display for a portable electronic device, a car navigation system, a television, or the like, for example.
  • the organic EL display device 200 has a configuration in which a separation layer 210, a TFT element layer 220, and an organic EL element layer 230 are bonded to a support base material 240 via an adhesive 241.
  • a plurality of pixels are arranged in a matrix.
  • This organic EL display device 200 is a top emission type organic EL display device that takes out light from the side opposite to the support base 240 and displays an image.
  • Each configuration of the organic EL display device 200 is the same as that of the first embodiment.
  • the conductive layer 260 is formed on the heat resistant substrate 250, the separation layer 210 is formed so as to cover the conductive layer 260, and the TFT element layer 220 and the organic EL element layer 230 are further formed as display device layers.
  • the heat resistant substrate 250 serves as a base support substrate for forming the TFT element layer 220 and the organic EL element layer 230, and is not included in the configuration of the finished product of the organic EL display device 200.
  • the heat resistant substrate 250 for example, a glass plate such as non-alkali glass having a thickness of about 0.7 mm is prepared.
  • the heat-resistant substrate 250 has a size that allows a plurality of organic EL display devices 200 to be manufactured to be formed in a plurality of shapes.
  • the conductive layer 260 is formed over the heat resistant substrate 250. As illustrated in FIG. 13, the conductive layer 260 includes a conductive film 261 and an insulating film 263. A plurality of the conductive films 261 are provided, and are formed in a long shape so that each of them is arranged in parallel with a space therebetween. Then, an insulating film 263 is formed so as to partition them.
  • a titanium (Ti) film having a thickness of, for example, about 30 to 200 nm is formed by sputtering, and is patterned by photolithography so that long patterns having a width of about 100 to 300 mm are arranged in parallel.
  • a silicon nitride film, a silicon oxide film, a laminated film thereof, or the like is formed by a CVD method so as to partition between the plurality of conductive films 261, and the thickness is patterned.
  • An insulating film 263 with a thickness of about 150 to 400 nm is formed.
  • a part of the conductive film 261 may exist as an extremely thin portion 261 t under the insulating film 263. Since the ultrathin portion 261t of the conductive film 261 has a thickness of about 10 nm, for example, the ultrathin portion 261t substantially becomes an insulating region.
  • the material for forming the conductive film 261 may be a molybdenum (Mo) film, a transparent conductive film, or the like in addition to the titanium film.
  • Mo molybdenum
  • the separation layer 210, the TFT element layer 220, and the organic EL element layer 230 are formed in the same manner as in the first embodiment.
  • the conductive layer 260 and the heat-resistant substrate 250 are separated from the separation layer 210 by passing a current through the conductive layer 260.
  • the plurality of conductive films 261 are referred to as conductive films 261a, 261b, and 261c in order from the end.
  • a voltage is applied from the endmost conductive film 261a. Joule heat is generated by current flowing through the conductive film 261a, and in the region corresponding to the conductive film 261a in the separation layer 210, a portion having a thickness of about 1 ⁇ m from the surface of the polyimide film is thermally decomposed. The adhesion state of the conductive layer 260 is released.
  • the magnitude of the applied voltage is such that Joule heat equal to or higher than the decomposition temperature of the polyimide film can be applied to the surface of the polyimide film constituting the separation layer 210 at the interface between the separation layer 210 and the conductive layer 260.
  • a pulse voltage with a pulse width of about 50 to 150 milliseconds.
  • a predetermined voltage is applied to the conductive film 261b adjacent to the conductive film 261a to which the voltage is applied, and the adhesion state between the separation layer 210 and the conductive layer 260 in the region corresponding to the conductive film 261b in the separation layer 210. Is released.
  • the polyimide in the surface portion of the separation layer 210 between the conductive film 261a and the conductive film 261b (the region corresponding to the insulating film 231) is also thermally decomposed, so that the separation layer 210 and the conductive layer 260 are separated.
  • the adhesive state is released.
  • a predetermined voltage is sequentially applied to the conductive films 261c, 261d,..., And a portion having a thickness of about 1 ⁇ m from the surface of the polyimide film is thermally decomposed. As shown in FIG.
  • the conductive layer 260 is peeled from 210.
  • each conductive film 261 described here is an example, and the voltage may be applied to each conductive film 261 in another order.
  • static electricity is generated by peeling electrification when the conductive layer 260 is peeled off.
  • peeling off the conductive layer 260 in order from the end facilitates removal of static electricity, and the TFT element layer 220 and the organic EL element layer 230 are damaged by static electricity. From the viewpoint of suppressing this, it is preferable to apply a voltage in order from the conductive film 261 located on the end side of the substrate.
  • the support base material 140 is attached to the surface of the separation layer 210 exposed by peeling the conductive layer 260 and the heat-resistant substrate 250 in the second step using the adhesive 241. .
  • peripheral circuits such as LSI chips and flexible printed circuit boards (FPC) are mounted on the peripheral area. Thereby, the organic EL display device 200 is completed.
  • the conductive layer 260 and the heat-resistant substrate 250 are peeled from the separation layer 210 by thermally decomposing a portion having a thickness of about 1 ⁇ m including the surface of the separation layer 210, so that a laser is used. Processing traces along the laser processing shape do not remain on the separation layer 210.
  • a current is passed through each of the plurality of conductive films 261, a portion including the surface of the separation layer 210 can be uniformly thermally decomposed, and uneven decomposition of the separation layer 210 is suppressed from remaining. . Therefore, display quality deterioration and deterioration of optical characteristics such as contrast due to the presence of peeling process marks and thermal decomposition unevenness in the separation layer 210 are suppressed.
  • the thermal decomposition of the surface of the separation layer 210 is performed by Joule heat, heat is not transmitted to the surface of the separation layer 210 on the TFT element layer 220 side. Therefore, deterioration of the characteristics of the TFT element layer 220 and the organic EL element layer 230 due to heat that thermally decomposes the separation layer 210 is suppressed.
  • the magnitude of the voltage applied per time can be made smaller than when a current is passed over the entire surface of the conductive layer 260. Simplification and suppression of electric shock accidents.
  • the conductive film constituting the conductive layer 260 one type of the conductive film 261 may be formed, and thus the manufacturing process of the conductive layer 260 is simplified as compared with the case of the first embodiment. be able to.
  • each of the conductive films 261 is U-shaped. There may be.
  • the conductive layer 260 and the heat-resistant substrate 250 can be peeled from the separation layer 210 by sequentially applying a voltage from the endmost conductive film 261.
  • Embodiment 3 >> ⁇ Liquid crystal display device> 16 and 17 show a liquid crystal display device 3000 according to the third embodiment.
  • the liquid crystal display device 3000 is used as a display of a portable electronic device, a car navigation system, a television, or the like, for example.
  • the liquid crystal display device 3000 has a configuration in which a TFT substrate 3100 and a color filter (hereinafter also referred to as “CF”) substrate 3200 are arranged to face each other, and a liquid crystal layer 3300 is formed between both substrates.
  • the liquid crystal layer 3300 is sealed with a sealing material 3301 provided in a frame shape in the peripheral region between both substrates.
  • the liquid crystal display device 3000 includes a plurality of pixels arranged in a matrix.
  • the liquid crystal display device 3000 is a light transmission type liquid crystal display device.
  • the TFT substrate 3100 has a structure in which a separation layer 3110 and a display device layer 3120 are laminated on a support base material 3140 via an adhesive 3141.
  • An alignment film 3170 is provided on the surface of the TFT substrate 3100 on the display device layer 3120 side, and a polarizing plate 3242 is provided on the surface of the support base material 3240.
  • the separation layer 3110 is formed of a polyimide film.
  • the separation layer 3110 has a thickness of 5 to 15 ⁇ m, for example.
  • As a material for forming the separation layer 3110 there is heat resistance to a high temperature process when forming the TFT 3121, and since the liquid crystal display device 3000 is a light transmissive liquid crystal display device, a light transmissive polyimide. Is used.
  • An example of such a polyimide is a light transmissive polyimide having a thermal decomposition temperature of about 450 ° C.
  • the display device layer 3120 is provided for each of a plurality of pixels, in which a TFT 3121 is formed for each of a plurality of pixels, a TFT element layer provided with a planarization film 3122 so as to cover the plurality of TFTs 3121, and an upper layer of the planarization film 3122.
  • the pixel electrode 3124 is formed.
  • a contact hole 3123 reaching the drain electrode of each TFT 3121 is provided in the planarizing film 3122, and each of the plurality of pixel electrodes 3124 is electrically connected to the drain electrode of the TFT 3121 through a contact hose 3123.
  • the TFT 3121, the planarization film 3122, and the pixel electrode 3124 have a conventionally known configuration.
  • the support base material 3140 is formed of, for example, a flexible film. Since the liquid crystal display device 3000 is a light transmission type liquid crystal display device, the support base material 3140 is required to have high light transmission properties, heat resistance, and low retardation properties. Examples of the material for such a flexible film include cycloolefin polymers, cycloolefin copolymers, polysiloxane composites, and the like.
  • the supporting base material 3140 can realize a thin display by setting the thickness including the part of the adhesive 3141 to, for example, 50 to 400 ⁇ m.
  • the support base material 3140 can be formed of a material having a heat resistance lower than that required when forming the TFT.
  • the CF substrate 3200 has a structure in which a separation layer 3210 and a display device layer 3220 are laminated on a support base material 3240 with an adhesive 3241 interposed therebetween.
  • an alignment film 3270 is provided on the surface of the CF substrate 3200 on the display device layer 3220 side
  • a polarizing plate 3242 is provided on the surface of the support base material 3240 side.
  • the separation layer 3210 is formed of a polyimide film.
  • the separation layer 3210 has a thickness of 5 to 15 ⁇ m, for example.
  • a light-transmitting polyimide is used because the liquid crystal display device 3000 is a light-transmitting liquid crystal display device.
  • Examples of the light-transmitting polyimide include those having a thermal decomposition temperature of about 450 ° C.
  • the display device layer 3220 includes a color filter (CF) 3221 provided for each pixel, a color filter layer including a light shielding film 3222 provided so as to partition them, and a common electrode formed over the entire surface so as to cover them. 3223.
  • the CF 3221, the light shielding film 3222, and the common electrode 3223 have conventionally known configurations.
  • the support substrate 3240 on the CF substrate side is formed of, for example, a flexible film.
  • the support base material 3240 is required to have a high light transmission property and a low retardation property.
  • Examples of the material for the flexible film include cycloolefin polymer, cycloolefin copolymer, polysiloxane composite, polycarbonate, polyethylene terephthalate, and polymethyl methacrylate resin.
  • the support base material 3240 has a thickness of 50 to 400 ⁇ m, for example.
  • the liquid crystal layer 3300 is formed of a liquid crystal material such as nematic liquid crystal.
  • the TFT 3121 when the TFT 3121 is turned on, a predetermined charge is written in the pixel electrode 3124. Then, a potential difference is generated between the pixel electrode 3124 and the common electrode 3223 to which a common potential is applied, and an electric field is generated in the liquid crystal layer 3300.
  • the light transmittance of the liquid crystal layer 3300 is adjusted and an image is displayed.
  • a conductive layer 3160, a separation layer 3110, and a display device layer 3120 are formed over a heat resistant substrate 3150 on the TFT substrate 3100 side.
  • a conductive layer 3260, a separation layer 3210, and a display device layer 3220 are formed over the heat resistant substrate 3250 on the CF substrate 3200 side.
  • the display device layer 3120 on the TFT substrate 3100 side and the display device layer 3220 on the CF substrate 3200 side are bonded together so as to face each other.
  • the heat-resistant substrates 3150 and 3250 serve as base support substrates for forming the display device layers 3120 and 3220, and are not included in the configuration of the finished product of the liquid crystal display device 3000.
  • heat resistant substrates 3150 and 3250 for example, glass plates such as non-alkali glass having a thickness of about 0.7 mm are prepared.
  • the heat-resistant substrates 3150 and 3250 have a size that allows a plurality of liquid crystal display devices 3000 to be manufactured to be formed.
  • a conductive layer 3160 is formed on the heat resistant substrate 3150 through the same process as in the first embodiment.
  • the conductive layer 3160 includes an upper conductive film 3161, a lower conductive film 3162 (see FIG. 23), and an insulating film (not shown).
  • the upper conductive film 3161 constitutes the uppermost layer
  • the lower conductive film 3162 constitutes the lowermost layer
  • the insulating film is provided so as to insulate each of the upper conductive film 3161 and the lower conductive film 3162. ing.
  • a plurality of upper conductive films 3161 and a plurality of lower conductive films 3162 are provided, and each of them is arranged in parallel with a gap therebetween.
  • the upper conductive film 3161 and the lower conductive film 3162 are each formed in a U-shape, as in the first modification of the first embodiment.
  • a separation layer 3110 is formed by depositing a polyimide film by a slit coating method, a gravure coating method, a curtain coating method, a spin coating method, or the like so as to cover the conductive layer 3160.
  • the separation layer 3110 has a thickness of 5 to 15 ⁇ m, for example.
  • the display device layer 3120 is formed on the separation layer 3110 using a known method. Specifically, for example, a base coat film, a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode are stacked in a predetermined layout, and a plurality of them are arranged in a matrix corresponding to each pixel.
  • the TFT 3121 is formed.
  • a planarization film 3122 is formed so as to cover them, and contact holes 3123 reaching the respective drain electrodes of the TFT 3121 from the surface of the planarization film 3122 are formed.
  • a plurality of pixel electrodes 3124 that are electrically connected to the drain electrode through the contact hole and patterned corresponding to each pixel are formed, and an alignment film 3170 is formed in the upper layer of the pixel electrode 3124.
  • an amorphous silicon ( ⁇ -Si) film is preferable in view of the thermal decomposition temperature of the separation layer 3110 being about 450 ° C.
  • a laminated body having a configuration on the CF substrate side is manufactured independently of the above-described steps S311A to S313A.
  • step S311B a conductive layer 3260 is formed on the heat resistant substrate 3250 in the same manner as in step S311A.
  • step S312B a separation layer 3210 is formed so as to cover the conductive layer 3260 as in step S312A.
  • a display device layer 3220 is formed on the separation layer 3210 using a known method. Specifically, for example, by using an inkjet method or the like, each color CF film is formed so as to correspond to each pixel, and a light-shielding film is formed in a lattice shape to partition them, thereby forming a color filter layer. Then, a common electrode 3223 is formed on the entire surface of the substrate by using, for example, a CVD method, and an alignment film 3270 is formed on the common electrode 3223.
  • steps S311A to S313A and steps S311B to S313B may be performed first, or may be performed simultaneously in parallel.
  • step S314 the laminate on the TFT substrate 3100 side manufactured in steps S311A to S313A is bonded to the laminate on the CF substrate 3200 side manufactured in steps S311B to S313B.
  • the seal material 3301 is applied in a frame shape to one peripheral edge of the display device layers 3120 and 3220 of the two laminates, a liquid crystal material is dropped on a region surrounded by the seal material 3301, and the other laminate is overlaid. To bond them together. Thereby, the laminated body shown in FIG. 19 is obtained.
  • FIG. 20 shows a layout of the upper conductive film 3261 and the lower conductive film 3262 in the conductive layer 3260 on the CF substrate 3200 side in the stacked body obtained in step S314.
  • step S321 as in Modification 1 of Embodiment 1, a voltage is applied to each of the upper conductive film 3261 and the lower conductive film 3262 in order from the conductive film located at the end. Thereby, as shown in FIG. 21, the adhesion state of the separation layer 3210 and the conductive layer 3260 is released.
  • step S331 an adhesive 3241 (not shown in FIG. 22) is used on the surface of the separation layer 3210 exposed by peeling the conductive layer 3260 and the heat resistant substrate 3250 as shown in FIG.
  • the support base material 3240 is attached.
  • FIG. 23 shows a layout of the upper conductive film 3161 and the lower conductive film 3162 in the conductive layer 3160 on the TFT substrate 3100 side in the stacked body obtained in step S314.
  • step S322 as in step S321, a voltage is applied to each of the upper conductive film 3161 and the lower conductive film 3162 in order from the conductive film located at the end. Thereby, as shown in FIG. 24, the adhesion state of the separation layer 3110 and the conductive layer 3160 is released.
  • step S332 an adhesive 3141 (not shown in FIG. 25) is used on the surface of the separation layer 3110 exposed by peeling the conductive layer 3160 and the heat resistant substrate 3150 as shown in FIG.
  • the support base material 3140 is attached.
  • step S333 the mother substrate size formed product is divided into the size of the single liquid crystal display device 3000, and then the polarizing plates 3142 and 3242 are bonded to the surfaces of the supporting base materials 3140 and 3240, respectively.
  • step S334 peripheral circuits such as an LSI chip and a flexible printed wiring board (FPC) are mounted in the peripheral area. Thereby, the liquid crystal display device 3000 is completed.
  • FPC flexible printed wiring board
  • the conductive layers 3160 and 3260 and the heat-resistant substrates 3150 and 3250 are peeled from the separation layers 3110 and 3210 by thermally decomposing portions including the surfaces of the separation layers 3110 and 3210 having a thickness of about 1 ⁇ m.
  • the processing traces along the laser processing shape do not remain on the separation layers 3110 and 3210.
  • the portions including the surfaces of the separation layers 3110 and 3210 are thermally decomposed uniformly.
  • the thermal decomposition of the surfaces of the separation layers 3110 and 3210 is performed by Joule heat, heat is not transmitted to the surfaces of the separation layers 3110 and 3210 on the display device layers 3120 and 3220 side. Therefore, deterioration of the characteristics of the display device layers 3120 and 3220 due to heat that thermally decomposes the separation layers 3110 and 3210 is suppressed.
  • the current since current is passed through each of the upper conductive film 3161 and the lower conductive film 3162 and the upper conductive film 3261 and the lower conductive film 3262 which are divided into a plurality of currents, the current flows across the conductive layers 3160 and 3260.
  • the voltage applied per time can be reduced as compared with the case where the electric current is supplied, and the facility can be simplified and the occurrence of an electric shock accident can be suppressed.
  • each of the upper conductive films 3161 and 3261 and the lower conductive films 3162 and 3262 has been described as being U-shaped, but each extends in a long shape in parallel. It may be arranged as follows.
  • the support base materials 3140 and 3240 have been described as having a flat plate shape. Since it has, the rigid body of various shapes can be stuck as a support base material.
  • the liquid crystal display device 3000 is a liquid crystal display device having a configuration in which the TFT substrate 3100 and the CF substrate 3200 are arranged to face each other.
  • the liquid crystal display device may be used.
  • the liquid crystal display device 3000 is described as a transmissive liquid crystal, but may be a reflective liquid crystal display device.
  • an opaque polyimide having a higher melting temperature for example, a thermal decomposition temperature of about 550 ° C.
  • LTPS low-temperature polysilicon
  • IGZO oxide semiconductor film
  • the like that requires a higher temperature process can be used as the semiconductor film of the TFT 3121.
  • FIG. 26 shows a liquid crystal display device 4000 according to the fourth embodiment.
  • the liquid crystal display device 4000 is used as a display for a portable electronic device, a car navigation system, a television, or the like, for example.
  • the liquid crystal display device 4000 has a configuration in which a TFT substrate 4100 and a CF substrate 4200 are arranged to face each other, and a liquid crystal layer 4300 is formed between both substrates.
  • the liquid crystal layer 4300 is sealed with a sealing material 4301 provided in a frame shape in the peripheral region between both substrates.
  • the liquid crystal display device 4000 includes a plurality of pixels arranged in a matrix.
  • the liquid crystal display device 4000 is a light reflective liquid crystal display device.
  • the TFT substrate 4100 has a configuration in which a separation layer 4110 and a display device layer 4120 are laminated on a support base 4140 via an adhesive (not shown). Further, an alignment film (not shown) is provided on the surface of the TFT substrate 4100 on the display device layer 4120 side, and a polarizing plate (not shown) is provided on the surface of the support base material 4240.
  • the separation layer 4110 is formed of a polyimide film.
  • the separation layer 4110 has a thickness of 5 to 15 ⁇ m, for example.
  • polyimide having heat resistance to a high temperature process when forming the TFT 4121 is used. Note that since the liquid crystal display device 4000 is a light reflection type liquid crystal display device, polyimide does not require light transmittance. Examples of such polyimide include opaque polyimide having a thermal decomposition temperature of about 550 ° C.
  • a TFT is formed for each of a plurality of pixels, and a planarizing film is provided so as to cover the plurality of TFTs.
  • a contact hole reaching the drain electrode of each TFT is provided in the planarizing film.
  • a pixel electrode is provided for each of a plurality of pixels on the planarizing film, and is electrically connected to the drain electrode of the TFT.
  • the TFT, the planarizing film, and the pixel electrode have a conventionally known configuration.
  • the support substrate 4140 is formed of, for example, a flexible film. Since the liquid crystal display device 4000 is a reflective liquid crystal display device, the supporting base material 4140 is required to have heat resistance. Examples of the material for the flexible film include polycarbonate, polyarylate, polysulfone, polyetherimide, polyphenylene sulfide, polyamideimide, liquid crystal polyester, polyimide, polyetheretherketone, and coloring members thereof.
  • the supporting substrate 4140 can realize a thin display by setting the thickness including the adhesive 4141 portion to, for example, 50 to 400 ⁇ m.
  • the support base material 4140 can be formed of a material having a heat resistance lower than that required when forming the TFT.
  • the CF substrate 4200 has a configuration in which the display device layer 4220 is bonded to the support base material 4240 via an adhesive (not shown).
  • an alignment film (not shown) is provided on the surface of the TFT substrate 4200 on the display device layer 4220 side, and a polarizing plate (not shown) is provided on the surface of the support base material 4240.
  • the display device layer 4220 includes a CF provided for each pixel, a color filter layer including a light shielding film provided so as to partition them, and a common electrode formed over the entire surface so as to cover them. And is formed.
  • the CF, the light shielding film, and the common electrode have a conventionally known configuration.
  • the support base 4240 is formed of, for example, a flexible film or a rigid body.
  • the flexible film material include cycloolefin polymer, cycloolefin copolymer, polysiloxane composite, polycarbonate, polyethersulfone, polyarylate, polysulfone, polyetherimide, polyphenylene sulfide, polyamideimide, liquid crystal polyester, polyimide, Examples thereof include polyether ether ketone and coloring members thereof.
  • the rigid body include stainless steel (SUS) and glass epoxy resin.
  • the support substrate 4240 on the CF substrate side is formed of, for example, a flexible film or a rigid body.
  • the support base material 4240 is required to have a high light transmission property and a low retardation property.
  • Examples of the material for the flexible film include cycloolefin polymer, cycloolefin copolymer, polysiloxane composite, polycarbonate, polyethylene terephthalate, and polymethyl methacrylate resin.
  • the support base material 3240 has a thickness of 50 to 400 ⁇ m, for example.
  • the liquid crystal layer 4300 is formed of a liquid crystal material such as nematic liquid crystal.
  • this liquid crystal display device 4000 when the TFT is turned on, a predetermined charge is written into the pixel electrode. Then, a potential difference is generated between the pixel electrode and the common electrode to which a common potential is applied, and an electric field is generated in the liquid crystal layer 4300. By changing the alignment state of the liquid crystal molecules in the liquid crystal layer 4300 according to the strength of the electric field generated in the liquid crystal layer 4300 in each pixel, the light transmittance of the liquid crystal layer 4300 is adjusted and an image is displayed.
  • the conductive layer 4160, the separation layer 4110, and the display device layer 4120 are formed over the heat resistant substrate 4150 on the TFT substrate 4100 side, while the CF substrate 4200 is manufactured. Then, the display device layer 4120 on the TFT substrate 4100 side and the display device layer 4220 on the CF substrate 4200 side are bonded together so as to face each other.
  • the heat-resistant substrate 4150 serves as a base support substrate for forming the display device layer 4120 and is not included in the configuration of the finished product of the liquid crystal display device 4000.
  • a glass plate such as non-alkali glass having a thickness of about 0.7 mm is prepared.
  • the heat-resistant substrate 4150 has a size that allows a plurality of liquid crystal display devices 4000 to be manufactured to be formed.
  • the conductive layer 4160 is formed on the heat resistant substrate 4150 through the same process as that of the second embodiment.
  • the conductive layer 4160 includes a conductive film 4161 and an insulating film 4163 (see FIG. 29).
  • a plurality of the conductive films 4161 are provided and are formed in a long shape so that each of the conductive films 4161 is arranged in parallel to each other with a space therebetween. Then, an insulating film 4163 is formed so as to partition them.
  • a separation layer 4110 is formed by depositing a polyimide film by a slit coating method, a gravure coating method, a curtain coating method, a spin coating method, or the like so as to cover the conductive layer 4160.
  • the separation layer 4110 has a thickness of 5 to 15 ⁇ m, for example.
  • step S413 the display device layer 4120 is formed on the separation layer 4110 in the same manner as in step S313A of the third embodiment.
  • the CF substrate 4200 is manufactured by forming the display device layer 4220 on the support base material 4240 in step S414. Specifically, for example, by using an inkjet method or the like, each color CF film is formed so as to correspond to each pixel, and a light-shielding film is formed in a lattice shape to partition them, thereby forming a color filter layer. Then, for example, a CVD method or the like is used to form a common electrode on the entire surface of the substrate, and an alignment film is formed on the common electrode.
  • steps S411 to S413 and step S414 may be performed first, or may be performed in parallel.
  • step S415 the laminate on the TFT substrate 4100 side manufactured in steps S411 to S313 and the CF substrate 4200 manufactured in step S414 are bonded.
  • the seal material 4301 is applied in a frame shape to one peripheral edge of the display device layers 4120 and 4220 of the two stacked bodies, a liquid crystal material is dropped on the region surrounded by the seal material 4301, and the other stacked body is overlaid. To bond them together. Thereby, the laminated body shown in FIG. 28 is obtained.
  • FIG. 29 shows a layout of the conductive film 4161 and the insulating film 4163 in the conductive layer 4160 on the TFT substrate 4100 side in the stacked body obtained in step S415.
  • step S421 as in the second embodiment, a voltage is sequentially applied to each of the conductive films 4161 from the conductive film located at the end. Thereby, as shown in FIG. 30, the adhesion state of the separation layer 4110 and the conductive layer 4160 is released.
  • step S431 a support base material 4140 is attached to the surface of the separation layer 4110 exposed by peeling the conductive layer 4160 and the heat resistant substrate 4150 using an adhesive as shown in FIG. .
  • step S432 the mother substrate size formed product is divided into the size of a single liquid crystal display device 4000, and then a polarizing plate is bonded to the surfaces of the supporting base materials 4140 and 4240, respectively.
  • step S433 peripheral circuits such as an LSI chip and a flexible printed wiring board (FPC) are mounted in the peripheral area. Thereby, the liquid crystal display device 4000 is completed.
  • FPC flexible printed wiring board
  • the conductive layer 4160 and the heat-resistant substrate 4150 are peeled from the separation layer 4110 by thermally decomposing a portion having a thickness of about 1 ⁇ m including the surface of the separation layer 4110, so that a laser is used. Processing traces along the laser processing shape do not remain on the separation layer 4110.
  • the portion including the surface of the separation layer 4110 can be thermally decomposed uniformly, and uneven separation of thermal decomposition in the separation layer 4110 is suppressed. . Accordingly, display quality deterioration and deterioration of optical characteristics such as contrast due to the presence of peeling process marks and thermal decomposition unevenness in the separation layer 4110 are suppressed.
  • the magnitude of the voltage applied per time can be made smaller than when a current is passed over the entire surface of the conductive layer 4160, and the facility Simplification and suppression of electric shock accidents.
  • the support base material 4140 is described as having a flat plate shape.
  • the laminate of the separation layer 4110, the display device layer 4120, the liquid crystal layer 4300, and the CF substrate 4200 is flexible. Therefore, various shapes of rigid bodies can be pasted as a support base material.
  • the liquid crystal display device 4000 has a configuration in which the TFT substrate 4100 and the CF substrate 4200 are arranged to face each other.
  • the liquid crystal display device 4000 is described as being a light reflection type liquid crystal, but may be a light transmission type liquid crystal display device.
  • the material constituting the separation layer 4110 of the TFT substrate 4100 is required to have light transmittance, it is necessary to use transparent polyimide having a thermal decomposition temperature of about 450 ° C.
  • the separation layer may be a material having a thermal decomposition temperature or a melting point in a temperature range reachable by Joule heat generated when a current is passed through the conductive film.
  • aluminum melting point: about 660 ° C.
  • the separation layer may be used as the separation layer.
  • the separation layer does not transmit light when the separation layer is formed of aluminum, the light in the separation layer in the case of a transmissive liquid crystal display device, the reflection type liquid crystal display device, and the top emission type organic EL display device. It is not suitable as a material for the separation layer of the substrate on the take-out side. Moreover, it is preferable to use a polyimide as a material of a separation layer from the point which the bending performance of a separation layer is excellent.
  • the display device 200 is related to an organic EL display device or a liquid crystal display device.
  • the display device 200 is not limited to this.
  • an inorganic EL display device an electrophoretic display device, a plasma display (PD) ), Plasma addressed liquid crystal display (PALC), field emission display (FED), surface field display (SED (surface-conduction electron-emitter display)), etc.
  • PD plasma display
  • PLC Plasma addressed liquid crystal display
  • FED field emission display
  • SED surface-conduction electron-emitter display
  • the present invention is useful for a display device and a method for manufacturing the display device.

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention porte sur un procédé pour fabriquer un dispositif d'affichage (100), lequel procédé comporte une première étape pour former une couche conductrice (160) constituée de telle sorte qu'une pluralité de films conducteurs (161,162) sont isolés par l'intermédiaire d'un film isolant (163) sur un substrat résistant à la chaleur (150), puis pour former ensuite une couche de séparation (110) de façon à couvrir la couche conductrice (160), puis pour former ensuite des couches de dispositif d'affichage (120, 130) sur la couche de séparation (110), et une seconde étape suivant la première étape, dans laquelle un courant est amené à circuler dans chacun de la pluralité de films conducteurs (161, 162), de la chaleur étant générée par effet Joule, la surface de la couche de séparation (110) en contact avec la couche conductrice (160) étant fondue ou thermiquement décomposée par cette chaleur par effet Joule, et la couche conductrice (160) et le substrat résistant à la chaleur (150) étant arrachés à partir de la couche de séparation (110).
PCT/JP2012/005560 2011-09-08 2012-09-03 Dispositif d'affichage et procédé pour sa fabrication WO2013035298A1 (fr)

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