WO2013035205A1 - Composition pour manque de métal - Google Patents

Composition pour manque de métal Download PDF

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Publication number
WO2013035205A1
WO2013035205A1 PCT/JP2011/070652 JP2011070652W WO2013035205A1 WO 2013035205 A1 WO2013035205 A1 WO 2013035205A1 JP 2011070652 W JP2011070652 W JP 2011070652W WO 2013035205 A1 WO2013035205 A1 WO 2013035205A1
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WIPO (PCT)
Prior art keywords
composition
compound
electronic device
meth
acrylate
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Application number
PCT/JP2011/070652
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English (en)
Japanese (ja)
Inventor
有亮 堀口
美恵子 佐野
憲一朗 佐藤
Original Assignee
ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン
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Application filed by ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン filed Critical ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン
Priority to PCT/JP2011/070652 priority Critical patent/WO2013035205A1/fr
Priority to TW101131291A priority patent/TWI605111B/zh
Priority to PCT/JP2012/072985 priority patent/WO2013035869A1/fr
Priority to SG11201400491UA priority patent/SG11201400491UA/en
Priority to JP2013532686A priority patent/JP6182069B2/ja
Priority to CN201280049573.2A priority patent/CN103875065B/zh
Priority to EP12830373.2A priority patent/EP2755233B1/fr
Priority to KR1020147005978A priority patent/KR101926898B1/ko
Publication of WO2013035205A1 publication Critical patent/WO2013035205A1/fr
Priority to US14/200,871 priority patent/US9334429B2/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36—Amides or imides
    • C08F222/40—Imides, e.g. cyclic imides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D135/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least another carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present invention relates to a composition that can be used in the manufacture of electronic devices, particularly semiconductor devices, and the use thereof.
  • a flip chip technique for directly connecting a semiconductor chip onto a substrate is known.
  • the semiconductor chip and the wiring substrate are connected via electrodes (bumps) formed on the element forming surface side of the semiconductor chip.
  • an underfill material which is an adhesive composition, between the semiconductor chip and the wiring board.
  • an adhesive composition containing an epoxy compound and / or a (meth) acrylic compound is known (for example, Patent Document 1).
  • the composition using the radical curing reaction of the (meth) acrylic compound has a merit that the reaction rate is higher than that of the composition containing the epoxy compound and the efficiency of electronic device manufacturing can be improved.
  • a liquid adhesive composition is applied on a wiring board, a semiconductor chip is mounted, and electrode bonding and sealing are performed simultaneously.
  • a method so-called capillary method
  • a liquid adhesive composition is uniformly applied on the wiring substrate, and that the gap between the semiconductor chip and the wiring substrate is uniformly filled with the liquid adhesive composition. Therefore, if necessary, the fluidity of the adhesive composition may be increased by heating the syringe, the substrate, or the like to room temperature or higher.
  • An object of the present invention is to solve the above problems when a conventional adhesive composition is used, and to provide a composition that improves the productivity of an electronic device. Furthermore, it aims at providing the electronic device and electronic device containing this composition.
  • the present invention relates to the following matters.
  • composition according to 1 above, wherein the (b) maleimide compound comprises bismaleimide.
  • composition of said 1 or 2 containing a radical initiator containing a radical initiator.
  • composition With respect to the total weight of the composition 10 to 90% by weight of the (a) (meth) acryl compound, (B) 0.1 to 50% by weight of maleimide compound and (c) 0.001 to 20% by weight of isocyanuric acid having an allyl group 4.
  • the composition of the present invention In the composition of the present invention, the progress of the curing reaction from room temperature to 80 ° C. is sufficiently suppressed. Therefore, the composition of the present invention does not cause defective electrode bonding in flip chip mounting of a semiconductor chip, and can secure a sufficient working time in the mounting process. Thereby, a higher quality product can be provided without reducing the production efficiency of the electronic device by flip chip mounting.
  • composition for an electronic device of the present invention comprises at least (a) a (meth) acrylic compound, (B) a maleimide compound; (C) isocyanuric acid having an allyl group; including.
  • a (meth) acrylic compound (B) a maleimide compound; (C) isocyanuric acid having an allyl group; including.
  • the (meth) acryl compound used in the present invention may have one or more (meth) acryloyl groups, and preferably has two or more (meth) acryloyl groups.
  • a compound having two (meth) acryloyl groups optionally has a compound having one (meth) acryloyl group and / or three or more (meth) acryloyl groups. It is preferable to use the compound added.
  • the (meth) acrylic compound may be a monomer or an oligomer.
  • the (meth) acrylic compound that can be used in the present invention is not limited, but examples of the compound having a monofunctional (meth) acryloyl group include phenylphenol acrylate, methoxypolyethylene acrylate, acryloyloxyethyl succinate, Fatty acid acrylate, methacryloyloxyethylphthalic acid, phenoxyethylene glycol methacrylate, fatty acid methacrylate, ⁇ -carboxyethyl acrylate, isobornyl acrylate, isobutyl acrylate, tertiary butyl acrylate, hydroxyethyl acrylate, hydroxypropyl acrylate, dihydrocyclopentadiethyl acrylate, Cyclohexyl methacrylate, tertiary butyl methacrylate, dimethylaminoethyl Methacrylate, diethylaminoethyl methacrylate, tertiary butyl aminoe
  • These (meth) acrylic compounds may be used alone or in combination of two or more.
  • the content of the (meth) acrylic compound can be prepared depending on the use, but it is preferably 10 to 90% by weight, more preferably 20 to 60% by weight based on the total weight of the composition. .
  • the content of the (meth) acrylic compound is within this range, the viscosity before curing is low and the workability is excellent, and the strength after curing is also excellent.
  • maleimide compound contained in the composition of this invention is not specifically limited, For example, the following compounds can be mentioned.
  • Maleimide compound has partial structure (I):
  • R 1 and R 2 represent H, an alkyl group having 1 to 6 carbon atoms, or R 1 and R 2 together represent an alkylene group having 2 to 6 carbon atoms.
  • R 1 and R 2 are both H, or R 1 and R 2 together represent a 1,4-butylene group.
  • the maleimide compound is preferably in a liquid state at room temperature, and the group to which the partial structure (I) is bonded is a group that makes the maleimide compound in a liquid state, for example, a length and branch sufficient to make the maleimide compound into a liquid state. It is an organic group containing a branched alkyl, alkylene, alkylene oxide, alkylene carboxyl or alkylene amide structure.
  • the maleimide compound can have one or more partial structures (I).
  • a compound having two groups is a bismaleimide compound. Even if one maleimide compound is not liquid, it can be used as long as the composition becomes liquid when mixed with other maleimide compounds or when mixed with other components.
  • maleimide compounds in which the partial structure (I) is bonded to an alkyl group or an alkylene group include the following compounds. .
  • stearyl maleimide particularly preferred are stearyl maleimide, oleyl maleimide, behenyl maleimide, 1,20-bismaleimide derivatives of 10,11-dioctyleicosane, and combinations thereof.
  • a 1,20-bismaleimide derivative of 10,11-dioctyleicosane is available from Henkel Corporation under the product name X-BMI, and 1,20-diamino-10,11-dioctyleicosane and / or its cyclic Synthesized from isomeric diamines according to the method described in US Pat. No. 5,973,166 (the disclosure of US Pat. No. 5,973,166 is hereby incorporated by reference).
  • X-BMI is 1,20-bismaleimide-10,11-dioctyl-eicosane ⁇ compound represented by the formula (X-1) ⁇ , 1-heptylenemaleimide-2-octylenemaleimide-4-octyl-5 -Heptylcyclohexane ⁇ compound represented by the formula (X-2) ⁇ , 1,2-dioctylenemaleimide-3-octyl-4-hexylcyclohexane ⁇ compound represented by the formula (X-3) ⁇ or the like Includes two or more.
  • the bismaleimide compounds represented by the formulas (X-1) to (X-3) are also preferably used alone.
  • maleimide compounds in which the partial structure (I) is bonded to a group containing an alkylene oxide structure include the following compounds.
  • R is an alkylene group, preferably ethylene or 1,2-propylene
  • n is an integer of about 2 to 40, preferably an integer such that this compound is liquid, and distribution of n Is selected.
  • This compound is available as LUMICURE (registered trademark) MIA200 manufactured by Dainippon Ink and Chemicals, Inc.
  • the maleimide compounds can be used alone or in combination of two or more.
  • the content of the maleimide compound is preferably from 0.1 to 50% by weight, more preferably from 1 to 20% by weight, based on the total weight of the composition.
  • the curing rate is excellent.
  • the (meth) acrylic compound and maleimide compound in the composition undergo radical polymerization by being heated to a predetermined temperature. At that time, only one type of compound is polymerized to form a homopolymer. Or two or more compounds can be polymerized to form a copolymer.
  • composition of the present invention contains isocyanuric acid represented by the following formula (II).
  • R 1 , R 2 , and R 3 each independently represent hydrogen or a substituent having 1 to 50 carbon atoms, and at least one of R 1 , R 2 , and R 3 is —CH 2 It is a substituent containing an allyl group represented by —CH ⁇ CH 2 .
  • the substituent containing the allyl group is not particularly limited.
  • n represents an integer of 1 or more, preferably an integer of 1 to 18, more preferably an integer of 1 to 10, particularly preferably 1).
  • At least one allyl group is contained, and two or more, or three or more allyl groups may be contained.
  • at least one substituent may be a substituent containing the allyl group, and two or three substituents may contain an allyl group.
  • a plurality of allyl groups may be contained in one substituent.
  • R 1 , R 2 , and R 3 are substituents that does not contain an allyl group
  • the substituent is hydrogen or a substituent having 1 to 50 carbon atoms, and is not particularly limited as long as the object of the present invention is not impaired.
  • the substituent not containing an allyl group include an alkyl group having 1 to 50 carbon atoms, preferably 1 to 20 carbon atoms such as a methyl group, an ethyl group, a propyl group, and a butyl group, a phenyl group, a benzyl group, a phenethyl group, and a vinyl group.
  • the isocyanuric acid having an allyl group that can be used in the present invention is not limited.
  • triallyl isocyanurate, trimethallyl isocyanurate, diallyl monoglycidyl isocyanuric acid, 1-allyl-3,5-diglycidyl isocyanate examples thereof include nurate, diallyl isocyanurate, and diallylpropyl isocyanurate.
  • isocyanuric acid having an allyl group examples include, for example, TAIC (registered trademark) series from Nippon Kasei Co., Ltd., MeDAIC, DA-MGIC, MA-DGIC from Shikoku Kasei Kogyo Co., Ltd. And the like isocyanuric acid derivatives.
  • isocyanuric acids containing allyl groups may be used alone or in combination of two or more.
  • the composition of the present invention When the composition of the present invention is used for manufacturing a semiconductor device, the composition is applied on, for example, a wiring board as described later. In that case, in order to improve the fluidity
  • the content of the isocyanuric acid containing an allyl group is not particularly limited, but is preferably 0.001 to 20% by weight, preferably 0.1 to 10% by weight, based on the total weight of the composition. It is more preferable that
  • the composition of the present invention may contain a filler.
  • a filler By blending a filler, it is possible to obtain an electronic device composition having a low coefficient of linear expansion, excellent dimensional stability, and improved flame retardancy.
  • the filler either an insulating inorganic filler or a conductive inorganic filler can be selected depending on the application.
  • the insulating inorganic filler include silica, calcium silicate, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, aluminum nitride, and boron nitride. Silica is particularly preferable.
  • the conductive inorganic filler include metals and carbon black.
  • the filler that has been subjected to surface modification as necessary may be used.
  • Commercially available products include, for example, Mitsubishi Chemical's “Mitsubishi Carbon Black” lineup, Asahi Carbon's “Asahi” series, Kawai Lime Industry's calcium silicate “PCM Light” series, aluminum hydroxide “ALH” series, and alumina-based “Sera” Sur, Titanium Chemical's titanium oxide “STR series”, Silica “Scicus series”, Zinc oxide “FINEEX series”, Magnesium oxide “SMO series”, Zirconium oxide “STR series”, Admattex silica, Alumina oxide “Adma” Examples include the “Fine” series, the “Snowtex” series of silica from Nissan Chemical Industries, and the “Nanotech” series of metal oxides containing silica and aluminum oxide.
  • the average particle size of the filler is preferably smaller than the gap size between the semiconductor chip element formation surface and the wiring board. If the average particle size of the filler is too large, when the semiconductor device is manufactured, the filler may be trapped between the metal connections, and good electrical reliability may not be obtained, or the chip may be destroyed.
  • the blending amount of the filler can be adjusted according to the use, but for example, it is preferably 1 to 99% by weight and more preferably 10 to 80% by weight with respect to the total weight of the adhesive composition. Within the above range, it is possible to obtain a composition having a viscosity that has a sufficient effect due to the addition of the filler and has no problem in handling properties.
  • the composition of the present invention preferably contains a radical initiator.
  • the radical initiator is preferably a thermal radical initiator.
  • As the thermal radical initiator an organic peroxide is preferable, and one that generates radicals at an appropriate temperature is selected.
  • the radical initiator is not particularly limited, and examples thereof include diisobutyl peroxide, cumyl peroxyneodecanate, di-n-propyl peroxycarbonate, diisopropyl peroxycarbonate, and di-sec-butyl peroxycarbonate.
  • 1,1,3,3-tetramethylbutylperoxyneodecane di (4-t-butylcyclohexyl) peroxydicarbonate, di (2-ethylhexyl) peroxydicarbonate, t-hexylperoxyneodecane Nate, t-butyl peroxyneodecanate, t-butyl peroxyneoheptanate, t-hexyl peroxypivalate, t-butyl peroxypivalate, di (3,5,5-trimethylhexanoyl) peroxide Dilauroyl peroxide 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanate, disuccinic acid peroxide, 2,5-dimethyl-2,5-di (2-ethylhexanoylperoxy) hexane, t-hexylper Oxy-2-ethylhexanate, di (4-methylbenz
  • the blending amount of the radical initiator is preferably 0.01 to 10% by weight, more preferably 0.1 to 5% by weight, based on the total weight of the composition.
  • the blending amount of the radical initiator is within the above range, there is no problem in stability when the composition is applied, and there is no problem that a long curing time is required.
  • the composition of the present invention can contain additives such as a silane coupling agent, a rubber component, an antioxidant, a light-resistant stabilizer, a radical stabilizer, and a surfactant, if necessary. Adhesiveness of the composition is improved by the silane coupling agent and the rubber component, and further, there are advantages such that stress is relieved and warpage of the reaction cured product is reduced. Antioxidants and radical stabilizers can be used when it is desired to further increase the pot life.
  • the surfactant can also be added in the case of improving defoaming at the time of coating, wettability to the coating target, and leveling properties.
  • the adhesiveness of the adhesive can be improved by blending the silane coupling agent into the composition.
  • silane coupling agent for example, an aminosilane coupling agent, an epoxy silane coupling agent, a ureido silane coupling agent, an isocyanate silane coupling agent, a vinyl silane coupling agent, a (meth) acryl silane coupling agent And ketimine silane coupling agents, among which isocyanate silane coupling agents, (meth) acryl silane coupling agents, and epoxy silane coupling agents are preferred.
  • silane coupling agents can be purchased from Toray Dow Corning, Shin-Etsu Silicone, Matsumoto Fine Chemical, Tokyo Chemical Industry Co., etc.
  • the amount of the silane coupling agent can be adjusted as appropriate, but for example, it is preferably 0 to 10% by weight, more preferably 0 to 5% by weight, based on the total weight of the composition.
  • a void will generate
  • the rubber is not particularly limited, and examples thereof include rubber products such as acrylic rubber, nitrile rubber, butadiene rubber, and nitrile butadiene rubber, and low molecular weight rubber crosslinking agents.
  • Commercially available rubber products include, for example, “Paraklon RP” series manufactured by Negami Kogyo Co., “Staffyroid IM” series and “Staffyroid AC” series manufactured by Ganz Kasei Co., “Zeon” series manufactured by ZEON Kasei Co., Ltd., and Mitsubishi Rayon “Metabrene C / E / W / S / SX / SRX” manufactured by the company is mentioned.
  • Low molecular weight rubber crosslinking agents include, for example, “Ricon” series manufactured by SARTOMER, “poly bd”, “poly ip” series, “Epol” series, “KRASOL”, manufactured by Nippon Soda Co., Ltd. “NISSO-PB” and the like. These may be used alone or in combination of two or more.
  • the blending amount of rubber can be adjusted as appropriate, but is preferably 0 to 30% by weight, and more preferably 0 to 20% by weight with respect to the total weight of the adhesive composition. If the rubber content is too high, the viscosity of the adhesive composition will increase excessively, resulting in poor handling, miscibility with other components, and poor adhesive adhesion. There is.
  • antioxidants and radical stabilizers include hydroquinones, benzoquinones, hindered phenols, and examples of light-resistant stabilizers include benzotriazole, triazine, benzophenone, benzoate, and hindered amine ultraviolet absorbers. It is done.
  • the surfactant can be selected from a commercially available catalog according to the purpose.
  • the composition of the present invention can be obtained by uniformly mixing the above-described components and, if necessary, a solvent.
  • the composition should just be adjusted to the viscosity which can be apply
  • the composition of the present invention is not particularly limited.
  • various known kneaders such as a homodisperser, a universal mixer, a Banbury mixer, a kneader, a two-roll, a three-roll, and an extruder are used alone or in combination. And it can manufacture by kneading
  • composition for an electronic device of the present invention is not particularly limited, but is preferably used as an underfill material (sealing material) in an electronic device, particularly a device including a semiconductor chip.
  • the manufacturing method of the electronic device is not particularly limited, but it is preferable to use a flip chip method.
  • the composition of the present invention is particularly preferably applied on the circuit surface of the wiring board.
  • an electronic device manufacturing method for example, (1) A coating process for coating the composition of the present invention on the circuit surface of the wiring board; (2) a bonding / sealing step in which a semiconductor chip is disposed on a composition coated on a wiring board, and electrical connection between the semiconductor chip and the wiring board and sealing of a gap between the semiconductor chip and the wiring board; including. Each step will be described below.
  • the composition of the present invention is coated on the circuit surface of the wiring board.
  • the composition may be applied to the entire surface of the wiring substrate, or may be applied only to the portion where the semiconductor chip is mounted.
  • Examples of the coating method include a method of coating with a spin coater, a dispenser, a roller, etc., screen printing, and the like.
  • ⁇ (2) Joining / sealing process> an electrical connection between the semiconductor element and the wiring board is performed, and at the same time, the gap between the semiconductor element and the circuit board is sealed with the composition of the present invention to manufacture an electronic device.
  • a semiconductor chip is placed on a portion of the wiring board where the adhesive composition has been applied.
  • alignment is performed so that the circuit surface of the wiring board (that is, the surface coated with the composition in the coating step) and the element formation surface of the semiconductor chip face each other.
  • thermocompression bonding is performed. After thermocompression bonding, heating may be further performed for the purpose of curing the adhesive composition.
  • thermocompression bonding generally, a method of aligning using a flip chip bonder and then performing thermocompression bonding as it is, or a method of heat-connecting an object after alignment and temporary mounting in a reflow furnace or the like is used. At that time, a thermal profile suitable for the package and the sealing method is used. In addition, not only flip chip bonder but also die bonder or the like that can be aligned can be used for chip mounting.
  • the temperature at which the thermocompression bonding is performed is not particularly limited, but when the electrode is a solder bump or a solder mounting bump, the temperature is preferably 10 to 100 ° C. higher than its melting point, and preferably 200 ° C. or higher. It is preferably 210 to 300 ° C.
  • the time for performing thermocompression bonding is preferably 1 to 20 seconds, and the pressure is preferably 0.1 to 7 MPa. Further, when further heating is performed in order to complete the curing of the adhesive composition after the thermocompression bonding, for example, it is preferably 30 to 180 minutes at 150 to 220 ° C.
  • the electronic device obtained as described above can be used in many electronic devices that use semiconductor chips such as mobile phones, personal computers, and televisions.
  • the devices used in the following examples and comparative examples are as follows.
  • the circuit board and (2) the semiconductor chip constitute a daisy chain by connecting the two, and can conduct when all the bumps in the chip are connected. That is, 544 pieces. If even one of the bumps cannot be connected, insulation will be shown in the continuity test.
  • Example 1> (Preparation of composition) The compounds shown in Table 2 were collected so as to have the respective compounding amounts, and were uniformly kneaded with three rolls. This was deaerated in a vacuum to prepare an adhesive composition A.
  • the composition A was applied onto the circuit board using an auto dispenser to obtain a circuit board B coated with the adhesive composition A.
  • circuit board B (Electronic device mounting) Flip chip bonder with pulse heat function immediately after obtaining circuit board B (leaving time 0 minutes) or after leaving on a hot plate at 80 ° C. for 15, 30, 45, 60 or 90 minutes
  • the semiconductor chip and the circuit board B were aligned and pressure-welded with each other, followed by thermocompression bonding at 240 ° C. by pulse heat. Thereafter, the composition A was cured in an oven at 150 ° C. for 1 hour to obtain an electronic device C.
  • Examples 2 to 8 An electronic device was manufactured by the same method as in Example 1 except that each component blended in the composition was changed as shown in Table 2. Also in Examples 2 to 8, the circuit board on which the composition was applied was allowed to stand at 80 ° C. for 0 minutes, 15 minutes, 30 minutes, 45 minutes, 60 minutes, and 90 minutes, and then an electronic device was manufactured to make it conductive. I investigated. As a result, good conductivity was obtained in all cases. Therefore, it was shown that the compositions of Examples 2 to 8 also maintained liquid properties that could be worked even when left on a hot plate at 80 ° C.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention a pour objectif de fournir une composition ne causant pas de problème au cours d'opérations lors d'une étape de montage de dispositif électronique, y compris en cas de chauffage. Plus précisément, l'invention concerne une composition pour dispositif électronique qui contient : (a) un composé (méth)acrylique; (b) un composé maléimide; et (c) un acide isocyanurique possédant un groupe allyle.
PCT/JP2011/070652 2011-09-09 2011-09-09 Composition pour manque de métal WO2013035205A1 (fr)

Priority Applications (9)

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PCT/JP2011/070652 WO2013035205A1 (fr) 2011-09-09 2011-09-09 Composition pour manque de métal
TW101131291A TWI605111B (zh) 2011-09-09 2012-08-29 底膠用組成物
PCT/JP2012/072985 WO2013035869A1 (fr) 2011-09-09 2012-09-07 Composition pour manque de métal
SG11201400491UA SG11201400491UA (en) 2011-09-09 2012-09-07 Underfill composition
JP2013532686A JP6182069B2 (ja) 2011-09-09 2012-09-07 アンダーフィル用組成物
CN201280049573.2A CN103875065B (zh) 2011-09-09 2012-09-07 底部填充组合物
EP12830373.2A EP2755233B1 (fr) 2011-09-09 2012-09-07 Composition pour manque de métal
KR1020147005978A KR101926898B1 (ko) 2011-09-09 2012-09-07 언더필용 조성물
US14/200,871 US9334429B2 (en) 2011-09-09 2014-03-07 Underfill sealant composition

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EP2755233B1 (fr) 2016-11-02
US20140187729A1 (en) 2014-07-03
TW201321487A (zh) 2013-06-01
WO2013035869A1 (fr) 2013-03-14
JP6182069B2 (ja) 2017-08-16
SG11201400491UA (en) 2014-08-28
JPWO2013035869A1 (ja) 2015-03-23
EP2755233A4 (fr) 2015-06-03
EP2755233A1 (fr) 2014-07-16
CN103875065A (zh) 2014-06-18
KR20140068929A (ko) 2014-06-09
KR101926898B1 (ko) 2018-12-07
US9334429B2 (en) 2016-05-10
TWI605111B (zh) 2017-11-11
CN103875065B (zh) 2017-02-15

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