WO2013021985A1 - 露光装置用のアライメント装置及びアライメントマーク - Google Patents
露光装置用のアライメント装置及びアライメントマーク Download PDFInfo
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- WO2013021985A1 WO2013021985A1 PCT/JP2012/070046 JP2012070046W WO2013021985A1 WO 2013021985 A1 WO2013021985 A1 WO 2013021985A1 JP 2012070046 W JP2012070046 W JP 2012070046W WO 2013021985 A1 WO2013021985 A1 WO 2013021985A1
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- alignment
- substrate
- mask
- alignment mark
- mark
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/028—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring lateral position of a boundary of the object
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Definitions
- the present invention relates to an alignment apparatus and an alignment mark for an exposure apparatus for aligning a substrate and a mask in an exposure apparatus using a microlens array.
- Patent Document 1 discloses an exposure apparatus of a proximity exposure method in which a wafer to be exposed is disposed close to a mask. A mark is provided on both the mask and the wafer, and the mask and the wafer are relative to each other using the mark. It is comprised so that it may align.
- FIG. 44 is a schematic view showing an exposure apparatus using a microlens array.
- a mask 2 on which a pattern to be exposed on the substrate 1 is formed is disposed above the substrate 1 to be exposed with an appropriate distance from the substrate 1.
- a microlens array 3 in which microlenses 4 are two-dimensionally arranged is disposed between the substrate 1 and the mask 2, and exposure light is irradiated from above the mask 2 to the mask 2. 2 is projected onto the substrate 1 by the microlens array 3, and the pattern formed on the mask 2 is transferred by the microlens array 3 as an erecting equal-magnification image to a resist or the like on the substrate surface. .
- the mask 2 and the substrate 1 are usually fixed, and the exposure light scans the substrate 1 by moving the microlens array 3 and the exposure light source and optical system integrally in a direction perpendicular to the paper surface. It is supposed to be.
- the alignment marks 1a and 2a are the same. It is necessary to observe with the same camera. That is, if the alignment marks 1a and 2a are observed separately with different cameras, the relative positions of the alignment marks 1a and 2a cannot be guaranteed.
- the mask and the substrate are close to each other at about 200 ⁇ m, and this distance is within the depth of focus of the camera. Therefore, the mask alignment mark and the substrate alignment mark are simultaneously displayed on the camera. Can be observed.
- the distance between the substrate 1 and the mask 2 that is, alignment.
- the gap G between the marks 1a and 2a is about 5 to 15 mm. This interval of 5 to 15 mm cannot be observed simultaneously with a normal camera lens system.
- an optical path difference is provided between the reflected light from the alignment mark 1a of the substrate 1 and the reflected light from the alignment mark 2a of the mask 2, and the alignment mark 1a of the substrate 1 and the mask It is also conceivable to correct the focus difference from the second alignment mark 2a.
- the gap G between the substrate 1 and the mask 2 is 5 to 15 mm.
- the light from the light source 20 is converged by the lens 21, reflected by the reflecting mirror 22, and incident on the beam splitter 17 through the lens 23.
- the light from the beam splitter 17 enters the mask 2 via the lenses 18 and 19, is reflected by the alignment mark 2 a of the mask 2, enters the substrate 1, and is reflected by the alignment mark 1 a of the substrate 1. .
- the light reflected by these alignment marks 1 a and 2 a is directed to the beam splitter 17, passes through the beam splitter 17, and then enters the beam splitter 14 through the lenses 16 and 15.
- the reflected light from the alignment marks 1 a and 2 a is separated by the beam splitter 14 into light directed to the beam splitter 11 and light directed to the mirror 13, and the light directed to the mirror 13 is transmitted to the beam splitter 11 by the mirror 12. Head. Then, the beam splitter 11 transmits the light from the beam splitter 14 as it is, and the light from the mirror 12 is reflected toward the camera 10. In this way, the light that has passed through the mirrors 13 and 12 from the beam splitter 14 and the light that has reached directly from the beam splitter 14 are detected by the camera 10.
- the total length of the optical path from the beam splitter 14 to the mirror 13, the optical path from the mirror 13 to the mirror 12, and the optical path from the mirror 12 to the beam splitter 11 is directly incident on the beam splitter 11 from the beam splitter 14.
- the length of the optical path is set to be longer by a focus difference of 80 to 240 mm.
- Both of the light traveling in the optical path incident on the laser beam form an image on a CCD (charge coupled device) of the camera 10, and the alignment marks 1 a and 2 a can be simultaneously observed by the camera 10.
- CCD charge coupled device
- the focus difference (equivalent to 80 to 240 mm) between the patterns of the alignment marks 1a and 2a on the substrate 1 and the mask 2 can be corrected by dividing them into different optical paths.
- the focus difference is corrected by another optical path as described above, there is a problem that the relative positions of both patterns of the alignment marks 1a and 2a are shifted when an optical axis shift occurs in each optical path. For this reason, this method reduces the alignment accuracy.
- the alignment accuracy is lowered, the exposure pattern accuracy is also lowered, which becomes a fatal problem for the recent exposure of a high-definition liquid crystal panel.
- the present invention has been made in view of such problems, and an object thereof is to provide an alignment apparatus and an alignment mark for an exposure apparatus that can perform alignment between a substrate and a mask with high accuracy.
- An alignment apparatus for an exposure apparatus includes a light source that emits exposure light, a mask in which exposure light from the light source is incident and a pattern that exposes the substrate is formed, and the substrate and the mask.
- a first microlens array that is provided with exposure light that has passed through the mask and forms an erecting equal-magnification image of the pattern on the substrate, relative to the mask and the substrate of the exposure apparatus.
- An alignment light source that irradiates alignment light on the substrate alignment mark provided on the substrate and the mask alignment mark provided on the mask from above the mask, and between the substrate alignment mark and the mask alignment mark A second microlens array that is disposed and forms reflected light reflected from the substrate alignment mark as an erecting equal-magnification image on the mask; reflected light from the substrate alignment mark; reflected light from the mask alignment mark; And a control device for adjusting the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment mark coincide with each other. It is characterized by that.
- An alignment apparatus for another exposure apparatus comprises: a light source that emits exposure light; a mask on which exposure light from the light source is incident and a pattern that exposes the substrate; and the substrate and the mask A first microlens array that is provided in between and receives exposure light transmitted through the mask to form an erecting equal-magnification image of the pattern on the substrate; and the mask of the exposure apparatus and the substrate
- An alignment light source for irradiating alignment light on the substrate alignment mark provided on the substrate and the mask alignment mark provided on the mask from below the substrate, and between the substrate alignment mark and the mask alignment mark A second microlens array that is disposed and forms reflected light reflected from the mask alignment mark as an erecting equal-magnification image on the substrate; reflected light from the substrate alignment mark; and reflected light from the mask alignment mark; And a control device that adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment
- the first microlens array and the second microlens array are constituted by a single shared microlens array, and the alignment light Is irradiated with the shared microlens array moved between the substrate alignment mark and the mask alignment mark.
- the first microlens array and the second microlens array are formed by a single shared microlens array including an exposure position irradiated with exposure light and an alignment position irradiated with alignment light. It is configured.
- the first microlens array and the second microlens array are configured separately.
- one of the substrate alignment mark and the mask alignment mark forms a frame shape, and the other is a rectangular shape positioned at the center of the frame during alignment. Can be configured.
- the alignment light source can be configured to emit alignment light coaxially with an optical axis of light detected by the camera, for example.
- the alignment light source and the camera are separate, and the optical axis of light from the alignment light source and the optical axis of reflected light detected by the camera can be configured not to be coaxial. .
- the alignment mark according to the present invention is: A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other, and a polygon having a polygonal opening disposed at a reversal imaging position between the unit microlens arrays
- a microlens array having a field stop and an aperture stop that is arranged at least in a part of the maximum magnification portion of the exposure light between the unit microlens arrays and has a circular aperture and defines the numerical aperture of each microlens is used.
- the microlens array is disposed between a substrate to be exposed and a mask provided with a pattern to be exposed on the substrate, and used to relatively align the mask and the substrate.
- Alignment mark Formed on the substrate or the mask; A plurality of linear mark pieces extending in directions inclined with respect to all sides of the opening of the polygonal field stop, and the mark pieces are a plurality of first group mark pieces extending radially from the alignment center; And a plurality of second group mark pieces extending on the sides of the polygon centered on the alignment center, and the plurality of mark pieces among the mark pieces are located in any one of the polygonal field stops. The positions of the polygonal field stop and the mark piece are determined so as to exist.
- the second group of mark pieces is preferably arranged continuously on a plurality of polygonal sides having different sizes with the alignment center as a common center.
- the mark pieces of the second group are intermittently arranged so as to include corner portions of the polygon on sides of a plurality of polygons having different sizes with the alignment center as a common center.
- it is.
- the thicknesses of the mark pieces of the second group located on different polygons are different.
- alignment marks are: An alignment mark formed on a substrate or a mask provided for an exposure apparatus for adjusting the position thereof, and made of a line-symmetric polygonal figure, A polygonal shape portion arranged so as not to be parallel to any one of the edges constituting the opening of the polygonal field stop of each of the plurality of lenses arranged in a matrix between the substrate and the mask; A radiation part composed of at least six radiations traversing the polygonal shape part from the center of the polygonal shape part; Have The whole of the polygonal shape part and the radiation part is larger than the size of the lens and smaller than the whole size of four adjacent lenses.
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that transfers an exposure pattern formed on a mask to a substrate, An alignment light source for emitting exposure light or for emitting independent alignment light; A microlens array that is disposed between the mask and the substrate and forms reflected light of alignment light reflected from a substrate alignment mark provided on the substrate as an erecting equal-magnification image on the mask; When the alignment light is simultaneously irradiated from the mask side to the substrate alignment mark and the mask alignment mark provided on the mask, the reflected light reflected from the mask alignment mark and the substrate alignment mark imaged on the mask A camera that detects an erect life-size image from the mask side; A control device that adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment mark coincide; Have The microlens array is A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other, and
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that transfers an exposure pattern formed on a mask to a substrate, An alignment light source for emitting exposure light or for emitting independent alignment light; A microlens array that is arranged between the mask and the substrate and forms reflected light of alignment light reflected from a mask alignment mark provided on the mask as an erecting equal-magnification image on the substrate; When the mask alignment mark and the substrate alignment mark provided on the substrate are simultaneously irradiated with alignment light from the substrate side, the reflected light reflected from the substrate alignment mark and the mask alignment mark imaged on the substrate A camera that detects an erect life-size image from the substrate side; A control device that adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment mark coincide; Have The mask alignment mark is A plurality of linear mark pieces extending in directions inclined with respect to all sides of the opening of the polygonal field stop, and the mark pieces are a plurality of first group mark
- the second group of mark pieces is preferably arranged continuously on a plurality of polygonal sides having different sizes with the alignment center as a common center.
- the mark pieces of the second group are intermittently arranged so as to include corner portions of the polygon on sides of a plurality of polygons having different sizes with the alignment center as a common center.
- it is.
- the thicknesses of the mark pieces of the second group located on different polygons are different.
- Another alignment mark includes a plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other, and an inverted imaging position between the unit microlens arrays.
- a polygonal field stop having a polygonal aperture disposed therein, and an aperture stop having a circular aperture and defining the numerical aperture of each microlens disposed in at least a part of the maximum magnification portion of the exposure light between the unit microlens arrays
- a microlens array having a light shielding film that shields a portion other than the microlens on the upper surface of the microlens array, and the microlens array has a substrate to be exposed and a pattern to be exposed on the substrate.
- an alignment element used when the mask and the substrate are relatively aligned with each other A mark put, Formed on the substrate or the mask; All sides constituting the mark are inclined with respect to a first direction in which the microlenses are arranged on a straight line.
- the microlenses are arranged in a line in a direction perpendicular to the scanning direction of the exposure apparatus, and the first direction is a direction perpendicular to the scanning direction and constitutes a mark. It is preferable that all sides to be inclined are inclined with respect to a direction perpendicular to the scanning direction. All sides constituting the mark preferably form an angle of 45 ° with respect to a direction perpendicular to the scanning direction.
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that transfers an exposure pattern formed on a mask to a substrate, An alignment light source for emitting exposure light or for emitting independent alignment light; A microlens array that is disposed between the mask and the substrate and forms reflected light of alignment light reflected from a substrate alignment mark provided on the substrate as an erecting equal-magnification image on the mask; When the alignment light is simultaneously irradiated from the mask side to the substrate alignment mark and the mask alignment mark provided on the mask, the reflected light reflected from the mask alignment mark and the substrate alignment mark imaged on the mask A camera that detects an erect life-size image from the mask side; A control device that adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment mark coincide; Have The microlens array is A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other, and
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that transfers an exposure pattern formed on a mask to a substrate, An alignment light source for emitting exposure light or for emitting independent alignment light; A microlens array that is arranged between the mask and the substrate and forms reflected light of alignment light reflected from a mask alignment mark provided on the mask as an erecting equal-magnification image on the substrate; When the mask alignment mark and the substrate alignment mark provided on the substrate are simultaneously irradiated with alignment light from the substrate side, the reflected light reflected from the substrate alignment mark and the mask alignment mark imaged on the substrate A camera that detects an erect life-size image from the substrate side; A control device that adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera and the mask alignment mark coincide; Have The microlens array is A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other, and a
- the microlenses are arranged in a line in a direction perpendicular to the scanning direction of the exposure apparatus, and the first direction is a direction perpendicular to the scanning direction and constitutes a mark. It is preferable that all sides to be inclined are inclined with respect to a direction perpendicular to the scanning direction. Moreover, it is preferable that all the pieces constituting the mark form an angle of 45 ° with respect to a direction perpendicular to the scanning direction.
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that is provided in a scan exposure apparatus using a microlens array that transfers a mask pattern to a substrate by scan exposure, and relatively aligns the mask and the substrate, An alignment light source for irradiating alignment light to a substrate alignment mark provided on the substrate and a mask alignment mark provided on the mask; A microlens array interposed between the substrate and the mask to form the substrate alignment mark or the mask alignment mark on the mask or the substrate as an erect life-size image, respectively, A camera that captures the substrate alignment mark and the mask alignment mark, one as an image of reflected light and the other as an erect life-size image; A control device that adjusts the position of the mask and / or the substrate based on the substrate alignment mark and the mask alignment mark imaged by the camera; Have The microlens array is A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other; A
- the control device moves the microlens array relative to the substrate and the mask in the scan exposure direction, and the substrate alignment mark by the camera at an interval that is not an integral multiple of the arrangement pitch of the microlens rows.
- the mask alignment mark image and the mask alignment mark image are captured a plurality of times, the captured plurality of images are superimposed, and the superimposed substrate alignment mark image and mask alignment mark image are used for alignment.
- Alignment apparatus for other exposure apparatus In an alignment apparatus for an exposure apparatus that is provided in a scan exposure apparatus using a microlens array that transfers a mask pattern to a substrate by scan exposure, and relatively aligns the mask and the substrate, An alignment light source for irradiating alignment light to a substrate alignment mark provided on the substrate and a mask alignment mark provided on the mask; A microlens array interposed between the substrate and the mask to form the substrate alignment mark or the mask alignment mark on the mask or the substrate as an erect life-size image, respectively, A camera that captures the substrate alignment mark and the mask alignment mark, one as an image of reflected light and the other as an erect life-size image; A control device that adjusts the position of the mask and / or the substrate based on the substrate alignment mark and the mask alignment mark imaged by the camera; Have The microlens array is A plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged and stacked on each other; A
- the control device moves the microlens array relative to the substrate and the mask in a scanning exposure direction, and continuously moves the image of the substrate alignment mark and the image of the mask alignment mark by the camera.
- the image of the substrate alignment mark and the image of the mask alignment mark that are continuously imaged are used for alignment.
- one of the substrate alignment mark and the mask alignment mark has a frame shape, and the other has a rectangular shape positioned at the center of the frame during alignment.
- the alignment light source preferably emits alignment light coaxially with an optical axis of light detected by the camera.
- the microlens array can be shared with a microlens array for exposure.
- an alignment light source irradiates the mask and the substrate with alignment light from above the mask
- the alignment light passes through the mask and is irradiated onto the substrate.
- the reflected light is formed on the mask as an erecting equal-magnification image of the substrate alignment mark by the second microlens array. Therefore, the substrate alignment mark and the mask alignment mark can be detected on the mask by the camera, and the focus difference on the camera side caused by the gap G between the substrate and the mask becomes zero. Therefore, even when the optical axis of the alignment light is tilted, the relative position between the alignment marks detected by the camera does not change, and the alignment between the substrate and the mask can be performed with high accuracy.
- the control device adjusts the position of the mask and / or the substrate so that the substrate alignment mark detected by the camera matches the mask alignment mark. Can be done with precision.
- the substrate is light transmissive such as PI (polyimide) and ITO (tin-doped indium oxide).
- the alignment light is transmitted through the substrate, irradiated onto the mask, reflected by the mask alignment mark on the mask, and then reflected by the second microlens array on the substrate.
- An image is formed as an erecting equal-magnification image of the mask alignment mark. Therefore, the substrate alignment mark and the mask alignment mark can be detected on the substrate by the camera, and the focus difference on the camera side due to the gap G between the substrate and the mask becomes zero. Therefore, even when the optical axis of the alignment light is inclined, the relative position between the alignment marks detected by the camera does not change, and the alignment between the substrate and the mask can be performed with high accuracy.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 1st Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A), (b) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG. It is a figure which shows the alignment apparatus for exposure apparatuses which concerns on the comparative example of this invention. It is a figure which shows the optical path of alignment light in the alignment apparatus which concerns on the comparative example of this invention.
- or (d) is a figure which shows the case where the 2nd micro lens array 7 is not provided in the alignment apparatus which concerns on 1st Embodiment.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 2nd Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 3rd Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A), (b) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 4th Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 5th Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A) is a figure which shows the alignment method of the board
- (b) is a figure which shows the board
- (A) is a figure which shows a substrate alignment mark with a microlens array
- (b) is the enlarged view.
- FIG. 1 It is a figure which shows the board
- A is a figure which shows a substrate alignment mark with a microlens array,
- (b) is the enlarged view.
- A) is a figure which shows a substrate alignment mark with a microlens array,
- (b) is the enlarged view.
- A) is a figure which shows a substrate alignment mark with a microlens array, (b) is the enlarged view.
- (A), (b) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG.
- or (d) is a figure which shows the alignment apparatus of the exposure apparatus which concerns on the comparative example of this invention. It is a figure which shows the modification of the board
- (A) is a figure which shows the substrate alignment mark which concerns on 7th Embodiment of this invention
- (b) is a figure which shows a substrate alignment mark with a micro lens array. It is a figure which shows the modification of the board
- (A), (b) is a figure which shows the board
- (A) is a figure which shows the alignment method of the board
- (b) is a figure which shows a mask alignment mark. It is a figure which shows the exposure apparatus which uses a micro lens array. It is sectional drawing which shows arrangement
- (A) shows the hexagonal field stop 12
- (b) is a schematic plan view showing a circular stop. It is a figure explaining the function of a hexagonal field stop.
- It is a figure which shows the mask alignment mark of the comparative example of this invention (a) shows the relationship of the mask alignment mark with respect to a micro lens array, (b) shows the shape of one mask alignment mark, (c) is It is a figure which shows the image detected by the sensor of a camera.
- It is a figure which shows the mask alignment mark of embodiment of this invention (a) shows the relationship of the mask alignment mark with respect to a micro lens array, (b) shows the shape of one mask alignment mark,
- (c) is It is a figure which shows the image detected by the sensor of a camera.
- or (c) were the image which showed the image of the board
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 11th Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (b) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG.
- or (d) are the board
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 13th Embodiment of this invention,
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 14th Embodiment of this invention, (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A), (b) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 15th Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- (A) is a figure which shows the alignment apparatus for exposure apparatuses which concerns on 16th Embodiment of this invention
- (b) is a figure which shows the relative positional relationship of the alignment mark detected.
- It is a figure which shows the exposure apparatus which uses a micro lens array.
- FIG. 1A is a view showing an alignment apparatus for an exposure apparatus according to the first embodiment of the present invention
- FIG. 1B is a view showing a relative positional relationship of detected alignment marks.
- an exposure apparatus provided with an alignment apparatus has a microlens array 3 between a substrate 1 and a mask 2 as in a conventional exposure apparatus using a microlens array.
- the exposure light emitted from the exposure light source 8 is transmitted through the pattern formed on the mask 2, and an erecting equal-magnification image of the pattern is formed on the substrate by the microlens array 3.
- the alignment apparatus is used for relative alignment between the substrate 1 and the mask 2.
- the alignment apparatus irradiates alignment light from above the mask 2 onto the substrate alignment mark 1 a provided on the substrate 1 and the mask alignment mark 2 a provided on the mask 2 above the mask 2.
- An alignment light source 5 is provided.
- the microlens array 3 for exposure is moved between the substrate alignment mark 1a and the mask alignment mark 2a when the relative alignment between the substrate 1 and the mask 2 is performed.
- the single microlens array 3 is moved during exposure and alignment.
- an erecting equal-magnification image reflected from the substrate alignment mark 1 a is formed on the mask 2 by the microlens array 3.
- a camera 6 is provided above the mask 2, and the camera 6 detects reflected light reflected from the mask alignment mark 2 a and an erecting equal-magnification image of the substrate alignment mark 1 a formed on the mask 2. It is configured as follows.
- the camera 6 is, for example, a single focus type coaxial episcopic microscope, and the alignment light source 5 is built therein.
- the alignment light source 5 is configured to emit alignment light coaxially with the optical axis of the light detected by the camera 6.
- laser light or lamp light transmitted through an interference filter can be used.
- the lamp light source for example, a halogen lamp is preferably used because the cost can be reduced.
- the alignment light source 5 may be provided separately from the camera 6. The light emitted from the alignment light source 5 is applied to the mask 2 and the substrate 1 through an optical system such as a reflecting mirror and a beam splitter.
- the mask 2 is provided with, for example, a frame-shaped mask alignment mark 2a
- the substrate 1 is provided with, for example, a rectangular substrate alignment mark 1a that is smaller than the mask alignment mark 2a.
- the substrate alignment mark 1a detected by the camera 6 is positioned at the center of the mask alignment mark 2a. To do.
- the alignment light applied to the mask 2 and the substrate 1 is reflected by the alignment marks 1a and 2a and detected by the camera 6, respectively.
- the camera 6 is connected to a control device 9 that controls the position of the mask 2, and the control device 9 aligns the substrate 1 and the mask 2 based on the detection result by the camera 6. Is necessary, the mask 2 is moved. For example, when the position of the substrate alignment mark 1a detected by the camera 6 is shifted from the center of the frame-shaped mask alignment mark 2a, the control device 9 positions the substrate alignment mark 1a at the center of the mask alignment mark 2a. The mask 2 is moved so that As shown by a two-dot chain line in FIG.
- control device 9 is connected to, for example, a stage on which the substrate 1 is placed, and moves the substrate 1 so that the substrate 1 and the mask 2 are moved. You may be comprised so that alignment may be performed. Alternatively, the control device 9 may be configured to align the substrate 1 and the mask 2 by moving both the substrate 1 and the mask 2.
- the reflected light reflected by the substrate alignment mark 1a is transmitted through the microlens array 3 by the microlens array 3 between the mask alignment mark 2a and the substrate alignment mark 1a.
- An erecting equal-magnification image of the substrate alignment mark 1a is formed. Therefore, a gap G of 5 to 15 mm actually exists between the substrate 1 and the mask 2, but the focus difference on the camera 6 side caused by this gap G becomes zero. Therefore, the alignment marks 1a and 2a of the substrate 1 and the mask 2 having different distances from the sensor of the camera 6 can be simultaneously imaged on the camera 6, and the positions of the substrate 1 and the mask 2 are adjusted using each alignment mark as an index. Then, the alignment between the substrate 1 and the mask 2 can be performed with high accuracy. Further, by setting the focus difference on the camera side to 0, even when the optical axis of the alignment light is tilted as shown in FIG. Accuracy can be obtained.
- the microlens array 3 is positioned below the pattern area provided on the mask 2 during exposure. First, the microlens array 3 is moved rightward in FIG. 1, and is moved between the substrate alignment mark 1a and the mask alignment mark 2a. Next, alignment light is emitted from an alignment light source 5 such as a halogen lamp built in the camera 6. The alignment light is first applied to the mask 2 via an optical system such as a reflecting mirror and a beam splitter. The alignment light irradiated on the mask 2 is reflected by the mask alignment mark 2a. On the other hand, the alignment light transmitted through the mask 2 is transmitted through the microlens array 3 disposed below the mask 2 and irradiated onto the substrate 1.
- an alignment light source 5 such as a halogen lamp built in the camera 6.
- the alignment light is first applied to the mask 2 via an optical system such as a reflecting mirror and a beam splitter.
- the alignment light irradiated on the mask 2 is reflected by the mask alignment mark 2a.
- the reflected light reflected by the substrate alignment mark 1 a passes through the microlens array 3 and is incident on the mask 2 again, and an erecting equal-magnification image of the substrate alignment mark 1 a is formed on the mask 2. Then, each reflected light is incident on the sensor of the camera 6 and an erecting equal-magnification image of the mask alignment mark 2a and the substrate alignment mark 1a formed on the mask 2 is detected.
- the camera 6 since the camera 6 detects an erecting equal-magnification image of the substrate alignment mark 1a imaged on the mask 2, in practice, between the substrate 1 and the mask 2, There is a gap G of 5 to 15 mm, but on the camera 6 side, the focus difference due to this gap G is zero.
- the substrate 1 and the mask 2 are aligned by the alignment marks 1a and 2a of the substrate and the mask detected by the camera 6.
- the control device 9 causes the substrate alignment mark 1a to be positioned at the center of the mask alignment.
- the substrate 2 and the mask 2 are aligned by moving the mask 2.
- the alignment marks 1a and 2a of the substrate 1 and the mask 2 are used as indices, and The alignment with the mask 2 can be performed with high accuracy.
- FIG. 3 is a view showing an alignment apparatus for an exposure apparatus according to a comparative example of the present invention
- FIG. 4 is a view showing an optical path of alignment light in the alignment apparatus according to the comparative example of the present invention.
- this alignment apparatus is an alignment apparatus that uses a bifocal type coaxial epi-illumination.
- a first light source 27 that emits long-wavelength light and a short-wavelength light are emitted.
- the long-wavelength light from the first light source 27 is reflected by the reflecting mirror 29, then travels toward the beam splitter 28, and the short-wavelength light from the second light source 26 is reflected by the second light source 26. With this beam splitter 28, it gathers with the long wavelength light from the first light source 27.
- These collective lights are converged by the lens 30, reflected by the beam splitter 24, pass through the lens 25, and then travel toward the mask 2 and the substrate 1.
- the collective light is incident on the mask 2 and the substrate 1 perpendicularly to the surface thereof, reflected by the alignment mark 2a of the mask 2 and the alignment mark 1a of the substrate 1, and returns to the same optical path as the incident optical path.
- the reflected light passes through the beam splitter 24, enters the camera 20 through the lenses 23 and 22 and the filter 21. Therefore, the reflecting mirror 29 and the beam splitter 28 constitute a first optical system that collects the long wavelength light and the short wavelength light emitted from the first and second light sources 27 and 26 in the same optical path, and the lens 30.
- the beam splitter 24 and the lens 25 constitute a second optical system that irradiates the collective light from the first optical system onto the mask 2 and the substrate 1 perpendicularly to the surfaces thereof.
- the lens 25, the beam splitter 24, and the lens 23, the lens 22 constitutes a third optical system that guides the reflected light reflected by the mask 2 and the alignment marks 2a, 1a of the substrate 1 to the camera 20 after returning the same optical path as the second optical system.
- the reflected light of the collective light reflected by the alignment mark 2a of the mask 2 and the alignment mark 1a of the substrate 1 passes through the same beam path as the incident light, goes straight through the beam splitter 24, passes through the filter 21, and passes through the filter 21. Incident on the sensor.
- the collective light passes through the optical system composed of the same lenses 25, 23, and 22. Therefore, in the case of such the same lens, the blue light (wavelength 405 nm) has a short focal length, and the red light (wavelength 670 nm) is the focal point. The distance is long.
- the optical constants and the like of the lenses 25, 23, and 22 are appropriately set, the blue light component of the light incident on the sensor of the camera 20 and reflected by the alignment mark of the mask 2 is the sensor of the camera 20.
- the light reflected by the alignment mark on the substrate 1 farther from the camera 20 can be focused at the sensor of the camera 20.
- the gap G between the substrate 1 and the mask 2 is about 5 to 15 mm, but the red light and the blue light of the incident light to the camera 20 are different.
- the focal point is focused on the sensor through the length, for example, 5 mm of the gap G is absorbed, and the alignment marks 1a and 2a of both the substrate 1 and the mask 2 can be focused on the sensor of the camera 20, and Both the alignment pattern and the alignment pattern on the mask 2 can be simultaneously observed by focusing the sensor.
- FIG. 5A when the alignment light is irradiated perpendicularly to the substrate 1 and the mask 2, as shown in FIG.
- a predetermined alignment accuracy is obtained.
- FIG. 5C when the optical axis of the alignment light is tilted, the optical path of the reflected light changes, and the substrate 1 and the mask 2 are caused by the gap G between the substrate 1 and the mask 2.
- FIG. 5D Even in a predetermined positional relationship, as shown in FIG. 5D, the positions of the alignment marks 1a and 2a detected on the camera 6 side are shifted.
- the alignment mark 2a and the alignment mark 1a are coincident in position, and the camera 6 is not aligned even though the mask 2 and the substrate 1 are aligned. It will be mistakenly observed. In other words, although the substrate 1 and the mask 2 are not aligned, the camera 6 may cause the alignment mark 1a to be observed as being in the center of the alignment mark 2a. If the mask 2 is aligned, it will be mistakenly observed.
- an erecting equal-magnification image of the substrate alignment mark 1a is formed on the mask 2 by the microlens array 3, and as shown in FIG. 2 (b), the relative positions of the substrate and mask alignment marks 1a and 2a detected by the camera 6 do not change, and extremely high alignment accuracy can be obtained. Can do.
- the alignment apparatus it is necessary to provide two alignment light sources having different wavelengths, and the structure and the alignment method are slightly complicated.
- an exposure micro light is used during alignment. By simply moving the lens array 3 between the substrate alignment mark 1a and the mask alignment mark 2a, the focus difference on the camera 6 side caused by the gap G between the substrate 1 and the mask 2 is reduced to 0, and high alignment accuracy is achieved. As a result, only one alignment light source is required.
- the microlens array 3 After alignment between the substrate 1 and the mask 2, the microlens array 3 is moved in the left direction in FIG. 1 and moved below the pattern area provided on the mask 2, and then exposure light is emitted, Scan exposure by the microlens array 3 is started.
- the exposure accuracy in scan exposure can be kept extremely high.
- the shape of the alignment marks 1a and 2a of the substrate and the mask in this embodiment is an example, and the alignment between the substrate 1 and the mask 2 can be performed by detecting each alignment mark 1a and 2a with the camera 6. As long as the present invention is not limited by the shape of the alignment marks 1a and 2a.
- the alignment light source 5 is built in the camera 6, and the case where the alignment light is configured to be emitted coaxially with the optical axis of the light detected by the camera 6 has been described.
- the optical axis of the light emitted from the alignment light source 5 is determined by the camera.
- the optical axis of the detected reflected light may not be coaxial.
- FIG. 6A is a view showing an alignment apparatus for an exposure apparatus according to the second embodiment of the present invention
- FIG. 6B is a view showing a relative positional relationship of detected alignment marks.
- the exposure microlens array 3 is moved during exposure and during alignment, and one microlens array is shared for both exposure and alignment.
- the microlens array 3 is provided in a size that includes an exposure position irradiated with exposure light and an alignment position irradiated with alignment light.
- the microlens array 3 is provided in a size that includes an exposure position irradiated with exposure light and an alignment position irradiated with alignment light.
- the microlens array 3 is provided in a size that includes an exposure position irradiated with exposure light and an alignment position irradiated with alignment light.
- 1st Embodiment it is the same as that of 1st Embodiment.
- one shared microlens array 3 is composed of a microlens array having a size including an exposure position and an alignment position, so that the microlens array 3 can be used during exposure and during alignment. No need to move Other effects are the same as those of the first embodiment.
- FIG. 7A is a view showing an alignment apparatus for an exposure apparatus according to the third embodiment of the present invention
- FIG. 7B is a view showing the relative positional relationship of detected alignment marks
- FIG. (B) is a figure which shows the case where the optical path of alignment light inclines in the exposure apparatus shown in FIG.
- the microlens array is provided with two (first) microlens arrays 3 for exposure and second microlens arrays 7 for alignment.
- the second microlens array 7 has the same optical characteristics as the (first) microlens array 3.
- Other configurations are the same as those of the first embodiment.
- an erecting equal-magnification image of the substrate alignment mark 1a can be formed on the mask 2, and the camera 6 side caused by the gap G of 5 to 15 mm between the substrate 1 and the mask 2
- alignment between the substrate 1 and the mask 2 can be performed with high accuracy.
- the relative positions of the alignment marks do not change, and extremely high alignment accuracy can be obtained.
- the microlens array since the microlens array 3 for exposure and the microlens array 7 for alignment are configured separately, in the same way as in the second embodiment, at the time of exposure and at the time of alignment, There is no need to move the microlens array 3.
- FIG. 9A is a view showing an alignment apparatus for an exposure apparatus according to the fourth embodiment of the present invention
- FIG. 9B is a view showing the relative positional relationship of detected alignment marks.
- the alignment light source 5 and the camera 6 are disposed below the substrate 1 and irradiate alignment light from below the substrate.
- the substrate alignment mark 1b has a frame shape
- the mask alignment mark 2b has a rectangular shape.
- the substrate 1 to be exposed is made of a light-transmitting material such as PI (polyimide) and ITO (tin-doped indium oxide), for example, and alignment light is transmitted through the substrate 1 and mask 2 Is irradiated. That is, in the present embodiment, when the substrate 1 is made of a light transmissive material, the irradiation direction of the alignment light and the shapes of the alignment marks 1b and 2b of the substrate 1 and the mask 2 are different from those of the first embodiment. The configuration of is the same as that of the first embodiment.
- the microlens array 3 for exposure is moved between the mask alignment mark 2b and the substrate alignment mark 1b when the relative alignment between the substrate 1 and the mask 2 is performed.
- the microlens array 3 is used by being moved during exposure and alignment.
- the reflected light reflected from the mask alignment mark 2b by the microlens array 3 is transmitted through the microlens array 3, and an erecting equal-magnification image of the mask alignment mark 2b is formed on the substrate 1.
- Imaged. Therefore, a gap G of 5 to 15 mm exists between the substrate 1 and the mask 2, but the focus difference on the camera 6 side caused by this gap G becomes zero.
- the alignment between the substrate 1 and the mask 2 is performed with high accuracy using the substrate alignment mark 1b of the substrate 1 and the mask alignment mark 2b of the mask 2 as indexes. Can be done. For example, when the position of the mask alignment mark 2b detected by the camera 6 is deviated from the center of the frame-shaped substrate alignment mark 1b, the controller 9 positions the mask alignment mark 2b at the center of the substrate alignment mark 1b. Thus, the mask 2 is moved so that the substrate 1 and the mask 2 are aligned.
- the alignment marks 1b and 2b of the substrate and the mask detected by the camera 6 are detected.
- the relative position does not change from the case where the alignment light is irradiated perpendicularly to the substrate 1 and the mask 2, and extremely high alignment accuracy can be obtained.
- the microlens array 3 is provided in a size including the exposure position irradiated with the exposure light and the alignment position irradiated with the alignment light. It is not necessary to move the microlens array 3 during exposure and during alignment.
- FIG. 10A is a view showing an alignment apparatus for an exposure apparatus according to the fifth embodiment of the present invention
- FIG. 10B is a view showing the relative positional relationship of detected alignment marks.
- the microlens array includes an exposure (first) microlens array 3 and an alignment second microlens array 7. Are provided.
- the second microlens array 7 has the same optical characteristics as the (first) microlens array 3. Thereby, in the present embodiment, it is not necessary to move the microlens array 3 during exposure and during alignment, as in the second embodiment.
- FIG. 11A is a diagram showing a substrate and mask alignment method according to a sixth embodiment of the present invention.
- FIG. 11B is a diagram showing a substrate alignment mark imaged on the mask together with a microlens array.
- 12 is a view showing a substrate alignment mark according to the sixth embodiment of the present invention
- FIG. 13A is a view showing the substrate alignment mark together with the microlens array
- FIG. 13B is an enlarged view thereof.
- the exposure apparatus is provided with a microlens array 3 between the substrate 1 and the mask 2 in the same manner as an exposure apparatus using a conventional microlens array.
- the exposure light emitted from the exposure light source 8 is transmitted through the pattern formed on the mask 2, and an erecting equal-magnification image of the pattern is formed on the substrate by the microlens array 3.
- the mask 2 is provided with, for example, a frame-shaped mask alignment mark 2a, and the substrate 1 to be exposed is provided with a substrate alignment mark 11 having a predetermined shape.
- the microlens array 3 is moved between, for example, the substrate alignment mark 11 and the mask alignment mark 2a, and one microlens array 3 is moved during exposure and alignment.
- the light reflected from the substrate alignment mark 11 is formed on the mask as an erecting equal-magnification image by the microlens array 3.
- the alignment light source 5 irradiates alignment light from above the mask 2 onto the substrate alignment mark 11 provided on the substrate 1 and the mask alignment mark 2 a provided on the mask 2 above the mask 2.
- an erecting equal-magnification image reflected from the substrate alignment mark 11 is formed on the mask 2 by the microlens array 3.
- a camera 6 is provided above the mask 2, and the camera 6 detects the reflected light reflected from the mask alignment mark 2 a and the upright equivalent image of the substrate alignment mark 11 formed on the mask 2. It is configured as follows. During alignment, when the substrate 1 and the mask 2 are in a predetermined positional relationship, the alignment center of the mask alignment mark 2 a detected by the camera 6 coincides with the alignment center of the substrate alignment mark 11.
- the camera 6 is connected to a control device 9 that controls the position of the mask 2, and the control device 9 aligns the substrate 1 and the mask 2 based on the detection result by the camera 6. Is necessary, the mask 2 is moved. For example, when the position of the alignment center of the substrate alignment mark 11 detected by the camera 6 is shifted from the alignment center of the mask alignment mark 2a, the control device 9 determines that the alignment center of the substrate alignment mark 11 is the mask alignment mark 2a. The mask 2 is moved so as to coincide with the alignment center. Note that, as shown by a two-dot chain line in FIG.
- control device 9 is connected to, for example, a stage on which the substrate 1 is placed, and moves the substrate 1 so that the substrate 1 and the mask 2 are moved. You may be comprised so that alignment may be performed. Alternatively, the control device 9 may be configured to align the substrate 1 and the mask 2 by moving both the substrate 1 and the mask 2.
- the camera 6 is, for example, a single focus type coaxial episcopic microscope, and the alignment light source 5 is incorporated therein.
- the alignment light source 5 is configured to emit alignment light coaxially with the optical axis of the light detected by the camera 6.
- laser light or lamp light transmitted through an interference filter can be used.
- the lamp light source for example, a halogen lamp is preferably used because the cost can be reduced.
- the alignment light source 5 may be provided separately from the camera 6. The light emitted from the alignment light source 5 is applied to the mask 2 and the substrate 1 through an optical system such as a reflecting mirror and a beam splitter.
- the microlens array 3 is provided with a polygonal field stop 42 and an aperture stop 41 for each microlens.
- the polygonal field stop is configured as a hexagonal field stop 42 formed as a hexagonal opening in the aperture stop 41 of the microlens. Therefore, as shown in FIG. 11B, the reflected light of the substrate 1 is transmitted only by the hexagonal field stop 42 from the substrate region corresponding to the region surrounded by the hexagon. An erecting equal-magnification image is formed on the mask 2.
- FIG. 25 is a schematic view showing an exposure apparatus using a microlens array.
- a mask 2 on which a pattern to be exposed on the substrate 1 is formed is disposed above the substrate 1 to be exposed with an appropriate distance from the substrate 1.
- a microlens array 3 in which microlenses 4 are two-dimensionally arranged is disposed between the substrate 1 and the mask 2, and exposure light is irradiated from above the mask 2 to the mask 2. 2 is projected onto the substrate 1 by the microlens array 3, and the pattern formed on the mask 2 is transferred by the microlens array 3 as an erecting equal-magnification image to a resist or the like on the substrate surface. .
- FIG. 26 is a view showing the microlens array 3 used in the exposure apparatus.
- the microlens array 3 has, for example, a four-lens eight-lens configuration, and a structure in which four unit microlens arrays 3-1, 3-2, 3-3, and 3-4 are stacked.
- Each unit microlens array 3-1 to 3-4 includes an optical system represented by two convex lenses on the front and back sides.
- the exposure light once converges between the unit microlens array 3-2 and the unit microlens array 3-3, and further forms an image on the substrate below the unit microlens array 3-4.
- an inverted equal magnification image of the mask 2 is formed between the unit micro lens array 3-2 and the unit micro lens array 3-3, and an erect equal magnification image of the mask 2 is formed on the substrate.
- a polygonal field stop (for example, a hexagonal field stop 42) is disposed between the unit microlens array 3-2 and the unit microlens array 3-3, and the unit microlens array 3-3 and the unit microlens array 3- 4, a circular aperture stop 41 is disposed.
- the aperture stop 41 limits the NA (numerical aperture) of each microlens, and the hexagonal field stop 42 narrows the field of view to a hexagon near the image forming position.
- the hexagonal field stop 42 and the aperture stop 41 are provided for each microlens.
- the light transmission region of the microlens is shaped into a circle by the aperture stop 41 and exposure light is exposed on the substrate.
- the area is shaped into a hexagon.
- the hexagonal field stop 42 is formed as a hexagonal opening in the aperture stop 41 of the microlens. Therefore, if the scanning is stopped by the hexagonal field stop 42, the exposure light transmitted through the microlens array 3 is irradiated only on the region surrounded by the hexagon shown in FIG. .
- the mask 2 and the substrate 1 are usually fixed, and the microlens array 3, the exposure light source, and the optical system are moved integrally in a direction perpendicular to the paper surface.
- Light scans the substrate 1.
- the alignment marks provided on the substrate 1 are, for example, two linear mark pieces 111A and 111B as shown in FIG.
- the substrate alignment mark 111 may be positioned between the microlenses of the microlens array 3 and the alignment mark may not be detected.
- the detected mark piece 111B constitutes the opening of the hexagonal field stop 42.
- the image detected by the camera 6 is an image of the side 42d constituting the opening of the hexagonal field stop 42 or an image of the mark piece 111B of the substrate alignment mark 111. It is difficult to identify.
- the substrate alignment mark 11 in the present embodiment has a plurality of linear mark pieces 11 ⁇ / b> A to 11 ⁇ / b> K extending in a direction inclined with respect to all the sides 42 a to 42 f of the opening of the hexagonal field stop 42. It is comprised by. Therefore, the direction in which the detected mark extends when detected by the camera 6 is inclined with respect to the side of the hexagonal field stop 42. Thereby, the mark piece detected by the camera 6 can be clearly identified with respect to the opening of the hexagonal field stop 42.
- the substrate alignment mark 11 in the present embodiment includes a plurality of first mark pieces 11A to 11C extending radially from the alignment center 110 and a plurality of sides extending on a polygonal (for example, octagonal) centered on the alignment center 110.
- the 1st mark piece and the 2nd mark piece cross in multiple places. That is, the first mark piece 11B intersects with the two second mark pieces 11E and 11I, and the first mark piece 11C intersects with the two second mark pieces 11F and 11J.
- the mark piece 11A intersects with the two second mark pieces 11D and 11K at one point, and also intersects with the two second mark pieces 11G and 11H at one point.
- the positions of the hexagonal field stop 42 and the mark pieces are determined so that a plurality of mark pieces are present in any one of the polygonal field stops.
- the alignment center 110 where the first mark pieces 11A to 11C intersect can be detected through the opening of the hexagonal field stop 42
- the alignment center 110 is used as an index. 1 and the mask 2 can be aligned.
- the alignment center 110 of the substrate alignment mark 11 is 2
- the alignment center 110 cannot be detected through the opening of the hexagonal field stop 42 because it is located in a region that does not transmit light between the two-dimensionally arranged microlenses.
- the substrate alignment mark 11 is provided in such a shape that, for example, the intersection of the mark pieces is detected through the opening of the hexagonal field stop 42, and the mark pieces 11A to 11K intersect each other.
- the alignment center 110 of the substrate alignment mark 11 is detected.
- FIG. 15 when the relative position of the substrate alignment mark 11 with respect to the microlens array 3 is shifted in the left-right direction from the state shown in FIG. 13, the intersection between the second mark pieces 11 ⁇ / b> E and 11 ⁇ / b> F. And the intersection of the second mark pieces 11I and 11J is detected through the opening of the hexagonal field stop 31. In this case, as shown in FIG.
- the midpoint of the detected intersection is detected as the alignment center 110 of the substrate alignment mark.
- FIG. 16 when the relative position of the substrate alignment mark 11 with respect to the microlens array 3 is deviated obliquely from the state shown in FIG. 13, the second mark pieces 11D and 11E intersect each other. And the intersection of the second mark pieces 11H and 11I is detected through the opening of the hexagonal field stop 31. In this case, as shown in FIG. 16B, the midpoint of the detected intersection is detected as the alignment center 110 of the substrate alignment mark. Further, as shown in FIG. 17, when the relative position of the substrate alignment mark 11 with respect to the microlens array 3 is shifted in the vertical direction from the state shown in FIG.
- the second mark pieces 11J and 11K intersect each other. And the intersection of the first mark piece 11A and the second mark pieces 11G and 11H are detected through the opening of the hexagonal field stop 31.
- the position separated by a predetermined distance with respect to the intersection between the first mark piece 11A and the second mark pieces 11G and 11H is the alignment of the substrate alignment mark. Detected as center 110.
- the intersection between the second mark pieces 11J and 11K is also detected, and is used for detecting the alignment center 110 of the substrate alignment mark as necessary.
- the microlens array 3 is positioned below the pattern area provided on the mask 2 during exposure. First, the microlens array 3 is moved in the right direction in FIG. 11, and is moved between the substrate alignment mark 11 and the mask alignment mark 2a. Next, alignment light is emitted from an alignment light source 5 such as a halogen lamp built in the camera 6. The alignment light is first applied to the mask 2 via an optical system such as a reflecting mirror and a beam splitter. The alignment light irradiated on the mask 2 is reflected by the mask alignment mark 2a. On the other hand, the alignment light transmitted through the mask 2 is transmitted through the microlens array 3 disposed below the mask 2 and irradiated onto the substrate 1.
- an alignment light source 5 such as a halogen lamp built in the camera 6.
- the alignment light is first applied to the mask 2 via an optical system such as a reflecting mirror and a beam splitter.
- the alignment light irradiated on the mask 2 is reflected by the mask alignment mark 2a.
- the reflected light reflected by the substrate alignment mark 11 passes through the microlens array 3 and enters the mask 2 again, and an erecting equal-magnification image of the substrate alignment mark 11 is formed on the mask 2.
- an erecting equal-magnification image of the substrate alignment mark 11 is formed on the mask 2.
- Each reflected light is incident on the sensor of the camera 6 to detect the mask alignment mark 2a and an erecting equal-magnification image of the substrate alignment mark 11 formed on the mask 2.
- the substrate alignment mark 11 is composed of a plurality of linear mark pieces 11A to 11K extending in a direction inclined with respect to all the sides 42a to 42f of the opening of the hexagonal field stop 42. . Therefore, when detected by the camera 6, it can be clearly identified with respect to the opening of the hexagonal field stop 42 by the direction in which the detected mark extends.
- the alignment center 110 of the substrate alignment mark 11 at which the first mark pieces 11A to 11C intersect with each other passes through the opening of the hexagonal field stop 42. If it can be detected, the substrate 1 and the mask 2 can be aligned using the alignment center 110 of the substrate alignment mark as an index. For example, when the position of the alignment center of the substrate alignment mark 11 detected by the camera 6 is shifted from the center of the frame-shaped mask alignment mark 2a, the control device 9 causes the alignment center 110 of the substrate alignment mark to be mask alignment. The mask 2 is moved so as to be positioned at the center of the mark 2a, and the substrate 1 and the mask 2 are aligned.
- the alignment marks 11 and 2a of the substrate 1 and the mask 2 are used as indices, and The alignment with the mask 2 can be performed with high accuracy.
- the alignment center 110 of the substrate alignment mark is two-dimensionally arranged.
- the alignment center 110 cannot be detected through the opening of the hexagonal field stop 42 because it is located in a region that does not transmit light between the formed microlenses.
- the substrate alignment mark 11 extends on the first mark pieces 11A to 11C extending radially from the alignment center 110 and the sides of a polygon (eg, octagon) centered on the alignment center 110.
- the hexagonal field stop 42 and the mark pieces are positioned such that the plurality of second mark pieces 11D to 11K are present, and the plurality of mark pieces are present in any one of the polygonal field stops. That is, the substrate alignment mark 11 is provided in such a shape that the intersection of the mark pieces is detected through the opening of the hexagonal field stop 42, and the substrate alignment mark 11A to 11K are crossed by the point where the mark pieces 11A to 11K intersect.
- the alignment center 110 of the mark 11 is detected.
- the camera 6 detects the intersection between the second mark pieces 11E and 11F and the intersection between the second mark pieces 11I and 11J through the opening of the hexagonal field stop 42. Then, as shown in FIG.
- the midpoint of the detected intersection is detected as the alignment center 110 of the substrate alignment mark.
- the intersection between the second mark pieces 11D and 11E and the intersection between the second mark pieces 11H and 11I are detected through the opening of the hexagonal field stop 42, and FIG. As shown in (b), the midpoint of the detected intersection is detected as the alignment center 110 of the substrate alignment mark.
- FIG. 17 when the intersection of the first mark piece 11A and the second mark pieces 11G and 11H is detected through the opening of the hexagonal field stop 42, FIG. As shown, a position separated by a predetermined distance with respect to the intersection between the first mark piece 11A and the second mark pieces 11G and 11H is detected as the alignment center 110 of the substrate alignment mark. Therefore, the substrate 1 and the mask 2 are aligned so that the alignment center 110 of the substrate alignment mark is positioned at the center of the frame-shaped mask alignment mark 2a.
- each alignment line 110 of the substrate alignment mark 11 is arranged even when the alignment center 110 of the substrate alignment mark 11 is located in a region that does not transmit light between two-dimensionally arranged microlenses.
- the alignment center 110 can be detected by the intersections of the mark pieces 11A to 11K, and the alignment accuracy can be maintained high by the detected alignment marks.
- the microlens array 3 is used to form an erecting equal-magnification image of the substrate alignment mark 11 on the mask 2, whereby a camera caused by the gap G between the substrate and the mask.
- the alignment light is irradiated perpendicularly to the substrate 1 and the mask 2.
- FIG. 19B a predetermined alignment accuracy is obtained.
- FIG. 19C when the optical axis of the alignment light is tilted, the optical path of the reflected light changes, and the substrate 1 and the mask 2 due to the gap G between the substrate 1 and the mask 2.
- FIG. 19D Even in a predetermined positional relationship, as shown in FIG. 19D, the positions of the alignment marks 1a and 2a detected on the camera 6 side are shifted.
- the alignment mark 2a and the alignment mark 1a are coincident in position, and the camera 6 is not aligned even though the mask 2 and the substrate 1 are aligned. It will be mistakenly observed. In other words, although the substrate 1 and the mask 2 are not aligned, the camera 6 may cause the alignment mark 1a to be observed as being in the center of the alignment mark 2a. If the mask 2 is aligned, it will be mistakenly observed.
- the microlens array 3 forms an erecting equal-magnification image of the substrate alignment mark 11 on the mask 2, so that the optical axis of the alignment light as shown in FIG. Even when is tilted, the relative positions of the alignment marks 11 and 2a of the substrate and the mask detected by the camera 6 do not change, and extremely high alignment accuracy can be obtained.
- the microlens array 3 After alignment between the substrate 1 and the mask 2, the microlens array 3 is moved leftward in FIG. 11 and moved below the pattern area provided in the mask 2, and then exposure light is emitted. Scan exposure by the microlens array 3 is started.
- the exposure accuracy in scan exposure can be kept extremely high.
- the alignment light source 5 is built in the camera 6, and the case where it is configured to emit alignment light coaxially with the optical axis of the light detected by the camera 6 has been described.
- FIG. 20 is a view showing a modification of the substrate alignment mark according to the sixth embodiment.
- the substrate alignment mark 12 in the present embodiment includes three first mark pieces 12A to 12C extending radially from the alignment center 120 and a plurality of first marks extending on a polygonal side centered on the alignment center 120. 2 mark pieces 12D to 12W. And the 1st mark piece and the 2nd mark piece cross in multiple places.
- the first mark piece 12B intersects with the two second mark pieces 12G and 12Q
- the first mark piece 12C intersects with the two second mark pieces 12J and 12T
- the mark piece 12A intersects with the two second mark pieces 12D and 12W at one point, and also intersects with the two second mark pieces 12M and 12N at one point.
- the number of intersections between mark pieces constituting the substrate alignment mark is the same as that in the sixth embodiment. Therefore, the same effect can be obtained by the same alignment method as in the sixth embodiment.
- FIG. 21A is a view showing a substrate alignment mark according to the seventh embodiment of the present invention
- FIG. 21B is a view showing the substrate alignment mark together with a microlens array.
- the substrate alignment mark 13 according to the present embodiment is an octagonal side having the alignment center as a common center on the alignment center 130 side in the substrate alignment mark 11 of the sixth embodiment. It has linear mark pieces 13d to 13k arranged in series.
- the other mark pieces 13A to 13C are the same as the mark pieces 11A to 11C of the sixth embodiment, and the mark pieces 13D to 13K are the same as the mark pieces 11D to 11K of the sixth embodiment.
- the substrate alignment mark can be modified in the same manner as in the sixth embodiment.
- the mark pieces 13D to 13K and 13d to 13k formed so as to surround the alignment center 130 may be divided into two, and a gap may be formed at the center.
- a substrate alignment mark 14 as shown in FIG. 22 can be used.
- the alignment mark 13 is composed of a line-symmetric polygonal figure and is arranged so as not to be parallel to any of the edges constituting the opening of the polygonal field stop.
- a polygonal part, and a radiation part composed of at least six radiations traversing the polygonal part from the center of the polygonal part, and the whole of the polygonal part and the radiation part Is larger than the size of the lens and smaller than the overall size of four adjacent lenses. Therefore, as described above, the line segment of the alignment mark 13 can be distinguished from the edge of the polygonal field stop 42, and further, since any line segment exists in the polygonal field stop 42, The center can be detected with high accuracy.
- FIGS. 23A and 23B are views showing substrate alignment marks according to the eighth embodiment of the present invention.
- the substrate alignment mark 15 according to the present embodiment includes a mark piece on the alignment center 130 side and a mark piece arranged on the outside in the substrate alignment mark 13 of the seventh embodiment.
- the line thickness is different. Therefore, in this embodiment, it is easy to distinguish between the linear mark on the alignment center 130 side and the outer mark piece.
- Other configurations and effects are the same as those of the sixth and seventh embodiments.
- the substrate alignment mark 15 can be modified in the same manner as in the sixth and seventh embodiments.
- a linear mark formed so as to surround the alignment center may be divided into two and a gap may be formed at the center, as shown in FIG.
- Such a substrate alignment mark 16 can be used.
- the case where the erecting equal-magnification image of the substrate alignment mark is formed on the mask has been described.
- the mask alignment mark is composed of a first group of mark pieces extending radially from the alignment center and a second group of mark pieces extending on a polygonal side centered on the alignment center. If the positions of the hexagonal field stop and the mark pieces are determined so that a plurality of mark pieces are present in any one of the polygonal field stops, the same effect as in the sixth to eighth embodiments can be obtained. can get.
- FIG. 24A is a diagram showing a substrate and mask alignment method according to the ninth embodiment of the present invention
- FIG. 24B is a diagram showing a mask alignment mark.
- the alignment light source 5 and the camera 6 are arranged below the substrate 1 and irradiate alignment light from below the substrate.
- the substrate alignment mark 1b has a frame shape
- the mask alignment mark 2B is provided in the same shape as the substrate alignment mark 11 in the sixth embodiment, as shown in FIG.
- the substrate 1 to be exposed is made of a light-transmitting material such as PI (polyimide) and ITO (tin-doped indium oxide), for example, and alignment light is transmitted through the substrate 1 and mask 2 Is irradiated. That is, in this embodiment, when the substrate 1 is made of a light transmissive material, the irradiation direction of the alignment light and the shapes of the alignment marks 1b and 2B of the substrate 1 and the mask 2 are different from those of the sixth embodiment. The configuration of is the same as that of the sixth embodiment. Even when the alignment light is irradiated from below the substrate as in the present embodiment, high-precision alignment can be realized by the same alignment method as in the sixth embodiment.
- PI polyimide
- ITO titanium-doped indium oxide
- FIG. 28 is a view showing an exposure apparatus according to an embodiment of the present invention
- FIG. 29 is a view showing the arrangement of microlenses of the microlens array
- FIG. 30 is a view showing the structure of the microlens array
- FIG. 31 is an opening shape.
- FIG. 32 and FIG. 32 are diagrams showing the principle of exposure using a microlens array.
- a microlens array 3 is disposed between the substrate 1 and a mask 2 on which an exposure pattern to be transferred to the substrate 1 is formed. In order to dispose the microlens array 3 therebetween, the gap between the substrate 1 and the mask 2 is 5 to 15 mm as described above.
- the microlens array 3 forms an erecting equal-magnification image of the pattern provided on the mask 2 on the substrate 1 as described later.
- a substrate alignment mark 32 is arranged on the surface of the upper surface of the substrate 1 facing the mask 2, and a mask alignment mark 31 is arranged on the surface of the lower surface of the mask 2 facing the substrate 1.
- the microlens array 3 is configured by two-dimensionally arranging a large number of microlenses 4, and each microlens 4 has a hexagonal hexagonal field stop 42. Is arranged, and only the light transmitted through the hexagonal field stop 42 is irradiated onto the substrate 1.
- the microlens array 3 is configured by stacking, for example, four unit microlens arrays 3-1, 3-2, 3-3, 3-4, and each unit microlens.
- the arrays 3-1, 3-2, 3-3, 3-4 have a structure in which microlenses 4 as convex lenses are formed on the upper and lower surfaces of a glass plate.
- a light shielding film 43 such as a Cr film is formed in a region other than the microlens 4 on the upper surface of the uppermost unit microlens array 3-1, and a circular opening 40 provided in the light shielding film 43 is formed. Inside, a microlens 2a as a convex lens is arranged. In order to prevent stray light, the light shielding film 43 reflects the exposure light irradiated to the area other than the microlens 4 and prevents the exposure light from entering the area other than the microlens 4.
- a hexagonal field stop 42 is disposed between the unit microlens array 3-2 and the unit microlens array 3-3, and the unit microlens array 3-3 and the unit microlens array 3-4 are connected to each other.
- a circular aperture stop 41 that defines the numerical aperture is disposed between them.
- the hexagonal field stop 42 is provided as a hexagonal opening in the opening 40 of the light-shielding film 43 having a lens shape.
- the opening 40 is provided as a circular opening.
- the exposure light transmitted through the mask 2 is first inverted between the unit microlens array 3-2 and the unit microlens array 3-3 by four unit microlens arrays.
- the maximum magnification is made between the unit microlens array 3-3 and the unit microlens array 3-4, and then the light is emitted from the unit microlens array 3-4 and erects on the substrate 1 or the like. Formed as a double image.
- the hexagonal field stop 42 is disposed at a position where the inverted equal magnification image is formed, the mask pattern is shaped into this hexagonal shape and transferred to the substrate 1.
- the circular diaphragm 41 shapes the maximum enlarged portion of the exposure light into a circle, and defines the NA (numerical aperture) of the microlens.
- the substrate 1 and the mask 2 are fixed, and the microlens 3 and the light source (not shown) move in the scanning direction S in synchronism with each other.
- the pattern of the mask 2 is scan-exposed on, for example, a resist film on the surface, or the microlens array 3 and the light source are fixed, and the substrate 1 and the mask 2 move in the scanning direction S in synchronization with each other,
- the resist film on the surface of the substrate 1 is scan-exposed with the pattern of the mask 2.
- the microlenses are arranged side by side in a direction perpendicular to the scanning direction S, and are adjacent to the scanning direction S with respect to the microlens array arranged in the direction perpendicular to the scanning direction S.
- the microlens rows are arranged slightly shifted in the direction perpendicular to the scanning direction S.
- the hexagonal field stop 42 of the microlens has a hexagonal shape, and is composed of a left triangular portion 45b, an intermediate rectangular portion 45a, and a right triangular portion 45c with respect to the direction perpendicular to the scanning direction S. ing.
- a plurality of microlens rows are arranged in the scan direction S so that the left triangle portion 45b of the microlens row and the right triangle portion 45c of the microlens row adjacent to the scan direction S overlap with each other in the scan direction S.
- the microlenses 4 are arranged on a straight line in the direction perpendicular to the scanning direction S, and are slightly shifted in the scanning direction S.
- microlens rows are arranged so as to form one group of three rows in the scanning direction S, and the fourth microlens row is arranged at the same position as the first microlens row. ing. That is, the first and fourth microlens rows have the same position in the direction perpendicular to the scanning direction S of the microlens 4.
- the first row of microarrays is firstly observed on the substrate 1 in the direction perpendicular to the scanning direction S.
- the region that receives the right triangular portion 45c of the hexagonal field stop of the lens row then passes through the left triangular portion 45b of the hexagonal field stop of the second microlens row, and then the third microlens row. Then there is no passage through the opening.
- the region that receives the rectangular portion 45a of the hexagonal field stop of the first microlens row does not pass through the opening in the second and third microlens rows.
- the region that receives the left triangular portion 45b of the hexagonal field stop of the first microlens row does not pass through the opening in the second microlens row, and then the third microlens. Passes through the right triangular portion 45c of the hexagonal field stop of the row.
- the region on the substrate 1 receives the two triangular portions 45b and 45c of the hexagonal field stop 42 each time three microlens rows pass, or one region.
- the rectangular portion 45a is passed through. Since the opening areas of the triangular portions 45b and 45c are 1 ⁇ 2 of the opening area of the rectangular portion 45a, each time the three microlens rows pass, exposure with a uniform amount of light is received in the scanning direction S.
- the third microlens array is the same as the third array in one group.
- the exposure is repeated. Therefore, as the microlens array 3, 3n (n is a natural number) microlens rows are provided in the scanning direction S, and the substrate 1 is scanned over the entire scan region by scanning the 3n microlens rows. , Receive uniform exposure with uniform light quantity.
- the microlens array 3 and the light source move relative to the substrate 1 and the mask 2 in the scanning direction S, so that the pattern formed on the mask 2 is exposed on the substrate 1. In this manner, an erecting equal-magnification image of the mask pattern of the mask 2 is transferred to the substrate 1 by the microlens array 3.
- the microlens array 3 is used to form an erecting equal-magnification image of the mask pattern of the mask 2 on the substrate 1 in the exposure process, as shown in FIG.
- the microlens array 3 is used for alignment of the substrate 1 and the mask 2 in the alignment step. That is, in the alignment step, the microlens array 3 is moved between the substrate alignment mark 32 and the mask alignment mark 31, and the mask alignment mark 31 and the substrate alignment mark 32 are detected by the camera 51 from above the mask 2. .
- the camera 51 is, for example, a single focus type coaxial episcopic microscope, and includes a light source for alignment and a sensor for taking an image. That is, the alignment light is emitted from the camera 51, and the reflected light of the alignment light is incident coaxially with the optical axis of the alignment light to detect the reflected light.
- the control unit 52 controls the irradiation of the alignment light by the camera 51 and the detection of the reflected light of the alignment light. Further, the control unit 52 controls a drive source (not shown) for relative alignment between the mask 2 and the substrate 1 based on the detection results of the mask alignment mark 31 and the substrate alignment mark 32.
- the alignment light source is configured to emit alignment light coaxially with the optical axis of the light detected by the camera 51.
- the alignment light source laser light or lamp light transmitted through an interference filter can be used. It can.
- a lamp light source for example, a halogen lamp is preferably used because the cost can be reduced.
- the alignment light source may be provided separately from the camera 51. The light emitted from the alignment light source is applied to the mask 2 and the substrate 1 through an optical system such as a reflecting mirror and a beam splitter.
- FIG. 33B shows the shape of the mask alignment mark 31 of the comparative example. That is, the mask alignment mark 31 is formed by forming a mouth-shaped pattern on a glass substrate 34 with a metal film 33 that reflects light, such as a Cr film. The central portion of the alignment mark 31 is a so-called punched portion 35 where the metal film 33 does not exist, and the exposure light is transmitted therethrough. Therefore, in the mask alignment mark 31, the mark shape is defined by the sides 3 a, 3 b, 3 c, and 3 d that are boundaries between the metal film 33 and the cutout portion 35.
- the microlens array 3 is detected as shown in FIG. That is, when the alignment light from the camera 51 is applied to the microlens array 3, the reflected light from the light shielding film 43 on the uppermost layer of the microlens array 3 appears white due to the large amount of light.
- the microlens 4 is provided in the opening 40 where the light shielding film 43 does not exist, and the light incident on the microlens 4 is shaped into a hexagon by the hexagonal field stop 42 and irradiated onto the substrate 1.
- the light reflected by one substrate alignment mark 32 returns to the camera 51 through the microlens 4, and the substrate alignment mark 32 is detected by the sensor of the camera 51.
- the light transmitted through the hexagonal field stop 42 and reflected by the substrate 1 has a large amount of light and appears white.
- light that is transmitted through the opening 40 of the light shielding film 43 but not transmitted through the hexagonal field stop 42 is reflected by the hexagonal field stop 12, returns to the camera 51, and is detected by the sensor of the camera 51.
- the reflected light of the hexagonal field stop 42 appears gray in the sensor of the camera 51 as shown in FIG.
- FIG. 33A shows the mask alignment mark 31 superimposed on the microlens array 2.
- the sides 3d of the mask alignment mark 31 may be located between two microlens rows. .
- the reflected light when the alignment light from the camera 51 is reflected by the mask alignment mark 31 has a large amount of light and appears white by the sensor of the camera 51, it is reflected by the light shielding film 43 of the microlens array 3. It is assimilated with the reflected light of the time and is indistinguishable. Therefore, as shown in FIG. 33C, an image detected by the sensor of the camera 51, the side 3d of the mask alignment mark 31 is assimilated with the reflected light from the light shielding film 43, and its position cannot be detected.
- FIG. 34B shows a configuration of the mask alignment mark 31 according to the embodiment of the present invention.
- the mask alignment mark 31 of the embodiment of the present invention has a square cut portion 35 formed on a glass substrate 34 by a metal film 33 which is a light-reflective reflection film such as a Cr film.
- a metal film 33 which is a light-reflective reflection film such as a Cr film.
- sides 3e, 3f, 3g, and 3h are formed at the boundary between the metal film 33 and the punched portion 35, and the shape of the mask alignment mark 31 is formed by the sides 3e, 3f, 3g, and 3h. It is prescribed.
- none of these sides 3e, 3f, 3g, and 3h extend in a direction that coincides with the arrangement direction of the microlenses 4 in the microlens array 3. That is, each of the sides 3e, 3f, 3g, and 3h is inclined with respect to the first direction in which the microlenses 2a are arranged on a straight line.
- the direction perpendicular to the scanning direction S is the first direction, and all the sides 3e, 3f, 3g, and 3h are scanned. Inclined with respect to the direction S.
- the sides 3e, 3f, 3g, and 3h intersect the scan direction S at an angle of 45 °.
- the microlens array 2 is disposed between the substrate alignment mark 32 of the substrate 1 and the mask alignment mark 31 of the mask 2, and the alignment light is emitted from above the mask 2 by the camera 51 that is an episcopic microscope. Irradiate vertically downward toward the substrate alignment mark 32. Then, as shown in FIG. 34 (a), the sensor of the camera 51 uses white light for the reflected light from the metal film 33 of the mask alignment mark 31 and the reflected light from the light shielding film 43 of the microlens array 3.
- the reflected light reflected by the hexagonal field stop 42 is detected as gray light, and the alignment light transmitted through the hexagonal field stop 42 detects the reflected light reflected by the substrate alignment mark 32 of the substrate 1. .
- the alignment light transmitted through the hexagonal field stop 42 by the microlens array 2 forms an image on the substrate 1, reflects off the substrate alignment mark 32, and then forms an image on the mask 2 by the microlens array 3.
- the mask alignment mark 31 is detected by the sensor of the camera 51 with the sides 3e, 3f, 3g, and 3h of the mask alignment mark 31 superimposed on the microlens array 3.
- the sides 3e, 3f, 3g, and 3h of the mask alignment mark 31 do not coincide with the arrangement direction of the microlenses, they are not positioned between the microlens rows, as shown in FIG.
- all the sides 3e, 3f, 3g, and 3h are detected on the reflected light (gray light) reflected by the hexagonal field stop 42.
- the sensor of the camera 51 detects the contour (all sides 3e, 3f, 3g, 3h) of the mask alignment mark 31 on the reflected light reflected by the hexagonal field stop 42 on the lower surface of the mask 2. Can do.
- the substrate alignment mark 32 can be detected as reflected light from the substrate alignment mark 32 imaged on the lower surface of the mask 2 by the microlens array 3. Since any mark can be detected on the lower surface of the mask 2, the camera 51 can simultaneously detect both marks within the range of the depth of focus.
- the mask alignment mark 31 and the substrate alignment mark 32 can be detected simultaneously on the same surface (mask lower surface).
- the substrate 1 and the mask 2 can be aligned with high accuracy.
- the camera 51 detects the substrate alignment mark 32 and the mask alignment mark 31 on the same plane, even when the optical axis of the camera 51 is inclined with respect to the mask 2, the substrate 1 and the mask 2 When the alignment is taken, the mask alignment mark 31 and the substrate alignment mark 32 are always detected at the aligned positions, so that the alignment between the mask 2 and the substrate 1 is not erroneously detected.
- FIG. 34 in the case of the present invention (FIG. 34), there is no edge extending in the arrangement direction of the microlens in the side indicating the outline of the mask alignment mark 31. All sides can be detected from the reflected light, and the mask alignment mark 31 can be detected with high accuracy. Therefore, the alignment accuracy between the mask 3 and the substrate 1 can be further improved.
- the present invention is not limited to the above embodiment.
- the alignment light is irradiated onto the mask and the substrate from above the mask, and the alignment light is detected above the mask.
- the alignment light is irradiated and detected from below the substrate 1.
- the camera 51 is arranged below the substrate 1 with its alignment light irradiation direction facing upward, the substrate alignment mark 32 is detected on the upper surface of the substrate 1, and the mask alignment mark 31 is placed on the upper surface of the substrate 1 by the microlens array 3.
- An image may be formed and detected on the upper surface of the substrate 1.
- the substrate alignment mark 32 may be formed as shown in FIG. In other words, it is necessary to form each side of the outline of the substrate alignment mark 32 so as not to coincide with the arrangement direction of the microlens array.
- the polygonal field stop is the hexagonal field stop 42, and the microlens rows form microlens row groups every three rows.
- the present invention is not limited to this, and various aspects are possible.
- the polygonal field stop that defines the field on the substrate by the microlens is not limited to the hexagonal field stop, and may have, for example, a rhombus, a parallelogram, or a trapezoidal opening.
- the field area can be decomposed into a central rectangular portion and triangular portions on both sides thereof.
- the number of microlens rows constituting one group of microlens rows is not limited to three.
- the arrangement of the microlenses shown in FIG. 32 constitutes one group with three rows in the scanning direction S, and the fourth microlens row is related to the first microlens row and the direction perpendicular to the scanning direction S.
- the lens size and the field width are different, so the ratio between the lens pitch interval and the field width may be changed. In that case, if the lens pitch is adjusted to be an integral multiple of the visual field width, there may be a case where the three-row configuration is not achieved.
- the microlens array 3 for exposure is moved between the mask alignment mark 31 and the substrate alignment mark 32 to project the image of the substrate alignment mark 32 on the mask.
- a dedicated microlens array may be provided, or a large microlens array having both exposure and alignment functions may be disposed.
- FIGS. 35 (a) to 35 (c) are diagrams showing an image of a substrate alignment mark detected through a polygonal field stop together with a microlens array and a camera in the alignment apparatus according to the eleventh embodiment of the present invention.
- FIG. 36A is a view showing a state in which the images of the substrate alignment marks imaged in FIG. 36 are superimposed
- FIG. 36A is a view showing the alignment apparatus for an exposure apparatus according to the eleventh embodiment of the present invention
- FIG. It is a figure which shows the relative positional relationship of the alignment mark made. As shown in FIG.
- an exposure apparatus provided with an alignment apparatus is a microlens array 3 between a substrate 1 and a mask 2 as in a conventional scan exposure apparatus using a microlens array.
- the exposure light emitted from the exposure light source 8 is transmitted through the pattern formed on the mask 2, and an erecting equal-magnification image of the pattern is formed on the substrate by the microlens array 3.
- the microlens array 3, the exposure light source, and the optical system are integrally moved relative to the mask 2 and the substrate 1 in a direction perpendicular to the paper surface in FIG. 36 (hereinafter referred to as a scan exposure direction).
- the exposure light scans on the substrate 1 and the pattern of the mask 2 is transferred onto the substrate 1.
- the alignment apparatus is used for relative alignment between the substrate 1 and the mask 2.
- the alignment apparatus irradiates alignment light from above the mask 2 onto the substrate alignment mark 1 a provided on the substrate 1 and the mask alignment mark 2 a provided on the mask 2 above the mask 2.
- An alignment light source 5 is provided. As shown in FIG. 36 (a), in the present embodiment, the alignment light source 5 is incorporated in a single focus type coaxial episcopic microscope together with the camera 6 that detects the substrate alignment mark 1a and the mask alignment mark 2a. .
- the alignment light source 5 is configured to emit alignment light coaxially with the optical axis of the light detected by the camera 6.
- laser light or lamp light transmitted through an interference filter can be used.
- the lamp light source for example, a halogen lamp is preferably used because the cost can be reduced.
- the alignment light source 5 may be provided separately from the camera 6. The light emitted from the alignment light source 5 is applied to the mask 2 and the substrate 1 through an optical system such as a reflecting mirror and a beam splitter.
- the microlens array 3 has, for example, a four-lens configuration, and four unit microlens arrays 3-1, 3-2, 3-3, 3-4 It has a laminated structure.
- Each unit microlens array 3-1 to 3-4 includes a plurality of microlenses 4 arranged two-dimensionally.
- a plurality of microlens rows in which a plurality of microlenses are arranged are arranged in a direction orthogonal to the arrangement direction. The microlenses of the adjacent microlens rows are offset from each other in the row direction.
- one microlens row group is configured by three rows of microlens rows.
- the microlens array 3 is arranged in the exposure apparatus and the alignment apparatus so that the arrangement direction of the microlenses in each microlens array is perpendicular to the relative scan exposure direction with respect to the substrate 1 and the mask 2. .
- the microlens array 3 is moved between the substrate alignment mark 1a and the mask alignment mark 2a when the relative alignment between the substrate 1 and the mask 2 is performed. 3 is moved during exposure and during alignment, and the microlens array 3 for exposure is shared and used for alignment.
- the exposure apparatus is provided with a drive device (not shown) for moving the microlens array 3, for example, and is controlled by a control device.
- the control device controls the microlens array 3 to move in the scan exposure direction integrally with the light source 8.
- the control device controls the microlens array 3 to move in the scan exposure direction in a state in which the alignment light is irradiated, so that the light reflected from the substrate 1 is microlens.
- the moving direction of the microlens array 3 is the same direction during exposure and during alignment.
- the mask 2 is provided with, for example, a frame-shaped mask alignment mark 2a
- the substrate 1 is provided with, for example, a rectangular substrate alignment mark 1a that is smaller than the mask alignment mark 2a.
- the substrate alignment mark 1a detected by the camera 6 is positioned at the center of the mask alignment mark 2a. To do.
- the microlens array 3 when the substrate 1 and the mask 2 are aligned, the microlens array 3 forms an erecting equal-magnification image reflected from the substrate alignment mark 1 a on the mask 2 and above the mask 2.
- the reflected light reflected from the mask alignment mark 2a and the erecting equal-magnification image of the substrate alignment mark 1a imaged on the mask 2 are simultaneously detected by the camera 6 provided in FIG.
- the camera 6 is connected to a second control device 9 that controls the position of the mask 2, and the second control device 9 determines the substrate 1 based on the detection result by the camera 6.
- the mask 2 is moved. For example, when the position of the substrate alignment mark 1a detected by the camera 6 is deviated from the center of the frame-shaped mask alignment mark 2a, the second controller 9 determines that the substrate alignment mark 1a is the mask alignment mark 2a.
- the mask 2 is moved so as to be positioned at the center. As shown by a two-dot chain line in FIG.
- the second control device 9 is connected to, for example, a stage on which the substrate 1 is placed, and moves the substrate 1 so that the substrate 1 and the mask are moved. 2 may be configured. Alternatively, the second control device 9 may be configured to align the substrate 1 and the mask 2 by moving both the substrate 1 and the mask 2.
- the reflected light reflected from the substrate alignment mark 1a by the microlens array 3 arranged between the mask alignment mark 2a and the substrate alignment mark 1a is transmitted through the microlens array 3 and the mask 2
- An erecting equal-magnification image of the substrate alignment mark 1a is formed on the top. Therefore, a gap G of 5 to 15 mm actually exists between the substrate 1 and the mask 2, but the focus difference on the camera 6 side caused by this gap G becomes zero. Therefore, the alignment marks 1a and 2a of the substrate 1 and the mask 2 having different distances from the sensor of the camera 6 can be simultaneously imaged on the camera 6, and the positions of the substrate 1 and the mask 2 are adjusted using each alignment mark as an index.
- the alignment between the substrate 1 and the mask 2 can be performed with high accuracy. Also, by setting the focus difference on the camera side to 0, as shown in FIG. 37A, the relative positions of the alignment marks do not change even when the optical axis of the alignment light is inclined (FIG. 37 ( b)) An extremely high alignment accuracy can be obtained.
- a hexagonal field stop 42 as shown in FIG. 27 is disposed at the reversal imaging position between the unit microlens arrays of the microlens array 3. Therefore, the image of the substrate alignment mark 1 a formed on the mask 2 is an image corresponding to the opening of the hexagonal field stop 42. Therefore, instantaneously, the edge of the substrate alignment mark 1a may not be located at a position corresponding to the opening of the hexagonal field stop 42, and the edge of the substrate alignment mark 1a cannot be detected from the camera 6 side. There are cases where the center position of the mark 1a cannot be specified and the detected image cannot be used for alignment between the substrate 1 and the mask 2.
- the microlens array 3 includes a plurality of microlenses arranged in a direction orthogonal to the scan exposure direction to form a microlens row, and a plurality of microlens rows are arranged in the scan exposure direction.
- the two microlens rows adjacent to each other in the scan exposure direction are arranged so as to be deviated in a direction perpendicular to the scan exposure direction.
- the controller performs scan exposure. Controlled to move in the direction. Then, the control device captures the images of both alignment marks with the camera a plurality of times at intervals that are not an integral multiple of the arrangement pitch of each microlens array of the microlens array 3, and superimposes the captured images.
- the images of the superimposed substrate alignment mark 1a and mask alignment mark 2a are used for alignment. Therefore, even when the polygonal field stop is provided, the edge of the substrate alignment mark 1a can be reliably identified. That is, as shown in FIGS. 35A to 35C, the edge of the image of the substrate alignment mark 1a detected by the camera 6 may not be detected instantaneously. For example, as shown in FIG. 35A, the left edge of the alignment mark 1a cannot be detected by the camera 6. However, while the control device moves the microlens array 3 in the scan exposure direction, the camera 6 causes the image of the substrate alignment mark 1a to be multiple times at intervals that are not an integral multiple of the arrangement pitch of the microlens rows of the microlens array 3.
- the edge of the substrate alignment mark 1a can be reliably detected by superimposing a plurality of captured images. And the mask 2 can be aligned.
- the alignment marks 1a and 2a are imaged by the camera 6 at an interval that is an integral multiple of the arrangement pitch of the microlens rows
- the image of the substrate alignment mark 1a is orthogonal to the scan exposure direction by multiple imaging. It is detected so that it may line up in the direction. Therefore, when the edge in the scanning direction of the substrate alignment mark 1a cannot be detected by the first imaging, the edge in the scanning exposure direction of the substrate alignment mark 1a cannot be detected even in the second and subsequent imaging.
- the number of times of imaging by the camera 6 is preferably equal to or greater than the number of rows of microlens rows constituting the microlens row group.
- the microlens array 3 is positioned below the pattern area provided on the mask 2 during exposure. First, the microlens array 3 moves to the right in FIG. 36 and moves between the substrate alignment mark 1a and the mask alignment mark 2a. Next, alignment light is emitted from an alignment light source 5 such as a halogen lamp built in the camera 6 and the control device controls the microlens array 3 to move in the scan exposure direction.
- the alignment light is first applied to the mask 2 via an optical system such as a reflecting mirror and a beam splitter.
- the alignment light irradiated on the mask 2 is reflected by the mask alignment mark 2a.
- the alignment light transmitted through the mask 2 is transmitted through the microlens array 3 disposed below the mask 2 and irradiated onto the substrate 1.
- the reflected light reflected by the substrate alignment mark 1 a passes through the microlens array 3 and is incident on the mask 2 again, and an erecting equal-magnification image of the substrate alignment mark 1 a is formed on the mask 2. Then, each reflected light is incident on the sensor of the camera 6 and an erecting equal-magnification image of the mask alignment mark 2a and the substrate alignment mark 1a formed on the mask 2 is detected.
- the camera 6 since the camera 6 detects an erecting equal-magnification image of the substrate alignment mark 1a imaged on the mask 2, in practice, between the substrate 1 and the mask 2, There is a gap G of 5 to 15 mm, but on the camera 6 side, the focus difference due to this gap G is zero.
- the control device causes the camera 6 to pick up an image of the substrate alignment mark 1a formed on the mask 2 a plurality of times together with the mask alignment mark 2a (FIG. 35). That is, since the hexagonal field stop 42 is provided in the inversion imaging position between the unit microlens arrays in the microlens array 3, the image of the substrate alignment mark 1a imaged on the mask 2 is hexagonal. An image corresponding to the opening of the field stop 42 is obtained, and in some cases, the edge of the substrate alignment mark 1a cannot be detected instantaneously from the camera 6 side. For example, as shown in FIG. 35A, the left edge of the substrate alignment mark 1a cannot be detected, and the center position of the substrate alignment mark 1a cannot be specified.
- the substrate alignment marks are spaced at intervals that are not an integral multiple of the arrangement pitch of each microlens array of the microlens array 3 by the camera 6 while the microlens array 3 is moved in the scan exposure direction by the control device.
- the image of 1a is taken a plurality of times.
- the control device superimposes the plurality of captured images and uses the superimposed images of the alignment marks 1a and 2a for alignment.
- the edge of the substrate alignment mark 1a can be reliably detected. Therefore, the center position of the substrate alignment mark 1a can be reliably specified, and can be used for highly accurate alignment.
- the substrate 1 and the mask 2 are aligned by the alignment marks 1a and 2a of the substrate and the mask detected by the camera 6.
- the second control device 9 sets the substrate alignment mark 1a to the mask alignment mark 2a.
- the mask 2 is moved so as to be positioned at the center, and the substrate 1 and the mask 2 are aligned.
- the alignment marks 1a and 2a of the substrate 1 and the mask 2 are used as indices, and The alignment with the mask 2 can be performed with high accuracy.
- the alignment accuracy is high, and at the time of alignment, the substrate 1 and the mask 2 are simply moved by moving the exposure microlens array 3 between the substrate alignment mark 1a and the mask alignment mark 2a.
- a high alignment accuracy can be obtained by setting the focus difference on the camera 6 side caused by the gap G to 0 to 0, and only one alignment light source is required.
- the microlens array 3 After alignment between the substrate 1 and the mask 2, the microlens array 3 is moved to the left in FIG. 36 and moved below the pattern area provided on the mask 2, and then exposure light is emitted, Scan exposure by the microlens array 3 is started.
- the exposure accuracy in scan exposure can be kept extremely high.
- the shape of the alignment marks 1a and 2a of the substrate and the mask in this embodiment is an example, and the alignment between the substrate 1 and the mask 2 can be performed by detecting each alignment mark 1a and 2a with the camera 6. As long as the present invention is not limited by the shape of the alignment marks 1a and 2a.
- the alignment light source 5 is built in the microscope together with the camera 6, and the case where the alignment light is configured to be emitted coaxially with the optical axis of the light detected by the camera 6 will be described.
- an erecting equal-magnification image of one of the substrate 1 and the mask 2 is formed on the other, and this is detected by the camera 6, so that the optical axis of the light emitted from the alignment light source 5 is the camera
- the optical axis of the reflected light detected at 1 may not be coaxial.
- 38 (a) to 38 (d) are images of the substrate alignment mark detected through the polygonal field stop and continuously captured as a moving image by the camera in the alignment apparatus according to the twelfth embodiment of the present invention. It is a figure which shows the image of the done substrate alignment mark. This embodiment is different from the eleventh embodiment in that the camera 6 continuously captures erecting equal-magnification images of the substrate alignment marks 1a formed on the mask 2 during alignment.
- FIG. 38 shows, as an example, a state in which the microlens rows of the microlens array 3 arranged in the scan exposure direction are moved by the arrangement pitch in the scan exposure direction.
- the control device continuously captures erecting equal-magnification images of the substrate alignment marks 1a formed on the mask 2 by the camera 6 while moving the microlens array 3.
- the image of the substrate alignment mark 1a formed on the mask 2 corresponding to the opening of the hexagonal field stop 42 is obtained by scanning.
- the image is detected so as to extend in a strip shape.
- the imaging time by the camera 6 is set.
- the center position of the substrate alignment mark 1a can be detected with higher accuracy than in the eleventh embodiment.
- FIG. 39A is a view showing an alignment apparatus for an exposure apparatus according to the thirteenth embodiment of the present invention
- FIG. 39B is a view showing the relative positional relationship of detected alignment marks.
- the microlens array 3 for exposure is moved during exposure and during alignment, and one microlens array is shared for exposure and alignment.
- the microlens array 3 is provided in a size that includes an exposure position irradiated with exposure light and an alignment position irradiated with alignment light. Yes.
- 11th Embodiment it is the same as that of 11th Embodiment.
- one shared microlens array 3 is composed of a microlens array having a size including an exposure position and an alignment position, so that the microlens array 3 can be used during exposure and during alignment. No need to move Further, it is possible to share a configuration in which the microlens array 3 is moved during exposure and alignment, for example, a driving device. Other effects are the same as those of the eleventh embodiment.
- the image of the substrate alignment mark 1a formed on the mask 2 by the camera 6 is continuously moved together with the image of the mask alignment mark 2a while moving the microlens array 3 during alignment.
- FIG. 40A is a view showing an alignment apparatus for an exposure apparatus according to a fourteenth embodiment of the present invention
- FIG. 40B is a view showing the relative positional relationship of detected alignment marks
- FIG. , (B) is a view showing a case where the optical path of the alignment light is inclined in the exposure apparatus shown in FIG.
- the microlens array includes two (first) microlens arrays 3 for exposure and two (second) microlens arrays 7 for alignment. Yes.
- the second microlens array 7 has the same optical characteristics as the (first) microlens array 3.
- Other configurations are the same as those in the eleventh embodiment.
- an erecting equal-magnification image of the substrate alignment mark 1a can be formed on the mask 2, and the camera 6 side caused by the gap G of 5 to 15 mm between the substrate 1 and the mask 2
- the alignment between the substrate 1 and the mask 2 can be performed with high accuracy.
- the microlens array is configured such that the exposure microlens array 3 and the alignment microlens array 7 are configured separately, so that, similarly to the thirteenth embodiment, during exposure and alignment, There is no need to move the microlens array 3.
- the control device moves the micro lens array 7 while the micro lens array 7 is moved, and the image of the substrate alignment mark 1a formed on the mask 2 by the camera 6 together with the mask alignment mark 2a.
- the same effect as that of the eleventh embodiment can be obtained by imaging a plurality of times at intervals that are not an integral multiple of the arrangement pitch of each microlens array of the lens array 3 and using the captured alignment mark images for alignment. It is done.
- the substrate alignment mark 1a imaged on the mask 2 by the camera 6 is continuously imaged together with the image of the mask alignment mark 2a. The same effect as the embodiment can be obtained.
- the microlens array 3 for exposure and the microlens array 7 for alignment are provided, so that the scan exposure direction of the microlens array 3 during exposure and the microlens array 7 during alignment are aligned.
- the moving direction can be different. That is, the effect of the present invention can be obtained if the movement direction of the microlens array 7 by the second driving device is a direction orthogonal to the arrangement direction of the microlenses constituting the microlens array.
- FIG. 42A is a view showing an alignment apparatus for an exposure apparatus according to the fifteenth embodiment of the present invention
- FIG. 42B is a view showing the relative positional relationship of detected alignment marks.
- the alignment light source 5 and the camera 6 are arranged below the substrate 1 and irradiate alignment light from below the substrate.
- the substrate alignment mark 1b has a frame shape
- the mask alignment mark 2b has a rectangular shape.
- the substrate 1 to be exposed is made of a light-transmitting material such as PI (polyimide) and ITO (tin-doped indium oxide), for example, and alignment light is transmitted through the substrate 1 and mask 2 Is irradiated. That is, in this embodiment, when the substrate 1 is made of a light transmissive material, the irradiation direction of the alignment light and the shapes of the alignment marks 1b and 2b of the substrate 1 and the mask 2 are different from those of the eleventh embodiment. The configuration of is the same as that of the eleventh embodiment.
- the microlens array 3 for exposure is moved between the mask alignment mark 2b and the substrate alignment mark 1b when the relative alignment between the substrate 1 and the mask 2 is performed.
- the microlens array 3 is used by being moved during exposure and alignment.
- the reflected light reflected from the mask alignment mark 2b by the microlens array 3 is transmitted through the microlens array 3, and an erecting equal-magnification image of the mask alignment mark 2b is formed on the substrate 1.
- Imaged the image of the mask alignment mark 2b formed on the substrate 1 by the hexagonal field stop 42 provided at the reversal imaging position between the unit microlens arrays of the microlens array 3 is converted into the hexagonal field stop 42.
- the edge of the mask alignment mark 2b cannot be detected from the camera 6 side, the center position of the mask alignment mark 2b cannot be specified, and the image of the captured alignment mark 2b is used as the substrate 1 and the mask 2 In some cases, it cannot be used for alignment.
- the microlens array 3 a plurality of microlenses are arranged in a direction orthogonal to the scan exposure direction to form a microlens row, and the microlens row is arranged in a plurality of rows in the scan exposure direction.
- the two microlens rows adjacent to each other in the scan exposure direction are arranged so as to be deviated in a direction perpendicular to the scan exposure direction, and are moved in the scan exposure direction by the controller during alignment. Be controlled. Therefore, also in the present embodiment, the control device displays the image of the mask alignment mark 2b imaged on the substrate 1 by the camera 6 together with the substrate alignment mark 1b of the arrangement pitch of each microlens array of the microlens array 3.
- a multi-view field stop is provided by imaging a plurality of times at intervals that are not an integral multiple, superimposing a plurality of captured images, and using the superimposed images of the substrate alignment mark 1b and the mask alignment mark 2b for alignment. Even in this case, the edge of the mask alignment mark 1b can be reliably identified and used for alignment between the substrate 1 and the mask 2.
- the alignment between the substrate 1 and the mask 2 can be performed with high accuracy using the alignment marks 1b and 2b of the substrate 1 and the mask 2 as indices. it can.
- the second control device 9 sets the mask alignment mark 2b to the position of the substrate alignment mark 1b. The mask 2 is moved so as to be positioned at the center, and the substrate 1 and the mask 2 are aligned.
- the substrate alignment mark 1b and the mask alignment mark 2b detected by the camera 6 can be detected even when the optical axis of the alignment light is inclined.
- the relative position does not change from the case where the alignment light is irradiated perpendicularly to the substrate 1 and the mask 2, and extremely high alignment accuracy can be obtained.
- the image of the mask alignment mark 2b formed on the substrate 1 by the camera 6 is continuously moved together with the image of the substrate alignment mark 1b while the micro lens array 3 is moved during alignment.
- microlens array 3 with a size that includes the exposure position irradiated with the exposure light and the alignment position irradiated with the alignment light, as in the thirteenth embodiment, during the exposure and during the alignment. Thus, there is no need to move the microlens array 3.
- FIG. 43A is a view showing an alignment apparatus for an exposure apparatus according to the sixteenth embodiment of the present invention
- FIG. 43B is a view showing the relative positional relationship of detected alignment marks.
- the microlens array is provided with two microlens arrays 3 for exposure and two microlens arrays 7 for alignment.
- the alignment microlens array 7 has the same optical characteristics as the exposure microlens array 3. Thereby, in this embodiment, the effect similar to 14th Embodiment is acquired.
- the scanning exposure direction of the microlens array 3 during exposure and the moving direction (first direction) of the microlens array 7 during alignment are different. Can do. That is, the effect of the present invention can be obtained if the movement direction of the microlens array 7 by the control device is a direction orthogonal to the arrangement direction of the microlenses constituting the microlens array.
- the camera mistakenly observes that the alignment is not achieved or the substrate and the mask are not aligned.
- the substrate and the mask are aligned with high accuracy using the substrate alignment mark and the mask alignment mark detected by the camera. be able to.
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Abstract
Description
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、前記マスクの上方からアライメント用の光を照射するアライメント光源と、前記基板アライメントマークと前記マスクアライメントマークとの間に配置され、前記基板アライメントマークから反射した反射光を前記マスク上に正立等倍像として結像させる第2のマイクロレンズアレイと、前記基板アライメントマークの反射光と前記マスクアライメントマークの反射光とを前記マスク側から検出するカメラと、このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、を有することを特徴とする。
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、前記基板の下方からアライメント用の光を照射するアライメント光源と、前記基板アライメントマークと前記マスクアライメントマークとの間に配置され、前記マスクアライメントマークから反射した反射光を前記基板上に正立等倍像として結像させる第2のマイクロレンズアレイと、前記基板アライメントマークの反射光と前記マスクアライメントマークの反射光とを前記基板側から検出するカメラと、このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、を有することを特徴とする。
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、を有するマイクロレンズアレイを使用し、このマイクロレンズアレイを、露光対象の基板と、この基板に露光するパターンが設けられたマスクとの間に配置して、前記マスクと前記基板とを相対的に位置合わせする際に使用されるアライメントマークであって、
前記基板又は前記マスクに形成され、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とする。
前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に連なって配置されていることが好ましい。又は、前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に、前記多角形の角部を含むようにして、断続的に配置されていることが好ましい。また、前記第2群のマーク片は、異なる多角形上に位置するものの太さが、相違することが好ましい。
露光装置に供される基板又はマスクに、それらの位置調整のために形成され、線対称の多角形形状の図形からなるアライメントマークであって、
前記基板と前記マスクとの間にマトリクス状に配置された複数個のレンズの夫々多角視野絞りの開口部を構成するいずれかの縁辺と平行にならないように配置された多角形形状部と、
前記多角形形状部の中心から、前記多角形形状部を横断する少なくとも6本の放射線からなる放射線部と、
を有し、
前記多角形形状部及び前記放射線部の全体が、前記レンズの大きさより大きく、4個の隣接するレンズの全体の大きさより小さいことを特徴とする。
マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記基板に設けられた基板アライメントマークから反射したアライメント光の反射光を前記マスク上に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクに設けられたマスクアライメントマークに前記マスク側からアライメント光を同時に照射したときに、前記マスクアライメントマークから反射した反射光及び前記マスク上に結像した前記基板アライメントマークの正立等倍像を前記マスク側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、を有し、
前記基板アライメントマークは、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とする。
マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記マスクに設けられたマスクアライメントマークから反射したアライメント光の反射光を前記基板上に正立等倍像として結像させるマイクロレンズアレイと、
前記マスクアライメントマーク及び前記基板に設けられた基板アライメントマークに前記基板側からアライメント光を同時に照射したときに、前記基板アライメントマークから反射した反射光及び前記基板上に結像した前記マスクアライメントマークの正立等倍像を前記基板側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マスクアライメントマークは、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とする。
前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に連なって配置されていることが好ましい。又は、前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に、前記多角形の角部を含むようにして、断続的に配置されていることが好ましい。また、前記第2群のマーク片は、異なる多角形上に位置するものの太さが、相違することが好ましい。
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有するマイクロレンズアレイを使用し、このマイクロレンズアレイを、露光対象の基板と、この基板に露光するパターンが設けられたマスクとの間に配置して、前記マスクと前記基板とを相対的に位置合わせする際に使用されるアライメントマークであって、
前記基板又は前記マスクに形成され、
前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とする。
前記マイクロレンズアレイは、そのマイクロレンズが露光装置のスキャン方向に垂直の方向に1列に整列して配置されており、前記第1の方向はこのスキャン方向に垂直の方向であり、マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対して傾斜していることが好ましい。前記マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対し45°の角度をなすことが好ましい。
マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記基板に設けられた基板アライメントマークから反射したアライメント光の反射光を前記マスク上に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクに設けられたマスクアライメントマークに前記マスク側からアライメント光を同時に照射したときに、前記マスクアライメントマークから反射した反射光及び前記マスク上に結像した前記基板アライメントマークの正立等倍像を前記マスク側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有し、
前記マスクアライメントマーク又は前記基板アライメントマークは、前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とする。
マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記マスクに設けられたマスクアライメントマークから反射したアライメント光の反射光を前記基板上に正立等倍像として結像させるマイクロレンズアレイと、
前記マスクアライメントマーク及び前記基板に設けられた基板アライメントマークに前記基板側からアライメント光を同時に照射したときに、前記基板アライメントマークから反射した反射光及び前記基板上に結像した前記マスクアライメントマークの正立等倍像を前記基板側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有し、
前記マスクアライメントマーク又は前記基板アライメントマークは、前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とする。
前記マイクロレンズアレイは、そのマイクロレンズが露光装置のスキャン方向に垂直の方向に1列に整列して配置されており、前記第1の方向はこのスキャン方向に垂直の方向であり、マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対して傾斜していることが好ましい。また、前記マークを構成する全ての片は、前記スキャン方向に垂直の方向に対し45°の角度をなすことが好ましい。
スキャン露光によりマスクのパターンを基板に転写するマイクロレンズアレイを使用したスキャン露光装置に設けられ、前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、アライメント用の光を照射するアライメント光源と、
前記基板と前記マスクとの間に介在して、前記基板アライメントマーク又は前記マスクアライメントマークを夫々前記マスク又は前記基板に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクアライメントマークを、一方は反射光の像及び他方は正立等倍像として撮像するカメラと、
このカメラにより撮像された前記基板アライメントマークと前記マスクアライメントマークとに基づいて、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、
この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、
前記単位マイクロレンズアレイ間の開口数を制限する開口絞りと、を有し、
前記複数個のマイクロレンズがスキャン露光方向に直交する方向に配列されてマイクロレンズ列を構成し、このマイクロレンズ列が前記スキャン露光方向に複数列配置されると共に、前記スキャン露光方向に隣接する2列のマイクロレンズ列の相互間は前記スキャン露光方向に直交する方向に偏倚するように配置されたものであり、
前記制御装置は、前記マイクロレンズアレイを前記基板及び前記マスクに対して相対的に前記スキャン露光方向に移動させると共に、前記マイクロレンズ列の配列ピッチの整数倍でない間隔で前記カメラにより前記基板アライメントマークの像及び前記マスクアライメントマークの像を複数回撮像し、撮像された複数個の像を重ね合わせて、この重ね合わされた基板アライメントマークの像及びマスクアライメントマークの像をアライメントに使用することを特徴とする。
スキャン露光によりマスクのパターンを基板に転写するマイクロレンズアレイを使用したスキャン露光装置に設けられ、前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、アライメント用の光を照射するアライメント光源と、
前記基板と前記マスクとの間に介在して、前記基板アライメントマーク又は前記マスクアライメントマークを夫々前記マスク又は前記基板に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクアライメントマークを、一方は反射光の像及び他方は正立等倍像として撮像するカメラと、
このカメラにより撮像された前記基板アライメントマークと前記マスクアライメントマークとに基づいて、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、
この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、
前記単位マイクロレンズアレイ間の開口数を制限する開口絞りと、を有し、
前記複数個のマイクロレンズがスキャン露光方向に直交する方向に配列されてマイクロレンズ列を構成し、このマイクロレンズ列が前記スキャン露光方向に複数列配置されると共に、前記スキャン露光方向に隣接する2列のマイクロレンズ列の相互間は前記スキャン露光方向に直交する方向に偏倚するように配置されたものであり、
前記制御装置は、前記マイクロレンズアレイを前記基板及び前記マスクに対して相対的にスキャン露光方向に移動させると共に、前記カメラにより前記基板アライメントマークの像及び前記マスクアライメントマークの像を連続的に動画として撮像し、連続的に撮像された基板アライメントマークの像及びマスクアライメントマークの像をアライメントに使用することを特徴とする。
前記基板アライメントマーク及び前記マスクアライメントマークの一方が、枠状をなし、他方がアライメント時に前記枠の中心に位置する矩形状をなすことが好ましい。また、前記アライメント光源は、前記カメラが検出する光の光軸と同軸的にアライメント光を出射することが好ましい。前記マイクロレンズアレイは、露光用のマイクロレンズアレイと共用することができる。
Claims (30)
- 露光光を出射する光源と、この光源からの露光光が入射され基板に露光するパターンが形成されたマスクと、前記基板と前記マスクとの間に設けられこのマスクを透過した露光光が入射されて前記基板に前記パターンの正立等倍像を結像させる第1のマイクロレンズアレイと、を有する露光装置の前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、前記マスクの上方からアライメント用の光を照射するアライメント光源と、
前記基板アライメントマークと前記マスクアライメントマークとの間に配置され、前記基板アライメントマークから反射した反射光を前記マスク上に正立等倍像として結像させる第2のマイクロレンズアレイと、
前記基板アライメントマークの反射光と前記マスクアライメントマークの反射光とを前記マスク側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有することを特徴とする露光装置用のアライメント装置。 - 露光光を出射する光源と、この光源からの露光光が入射され基板に露光するパターンが形成されたマスクと、前記基板と前記マスクとの間に設けられこのマスクを透過した露光光が入射されて前記基板に前記パターンの正立等倍像を結像させる第1のマイクロレンズアレイと、を有する露光装置の前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、前記基板の下方からアライメント用の光を照射するアライメント光源と、
前記基板アライメントマークと前記マスクアライメントマークとの間に配置され、前記マスクアライメントマークから反射した反射光を前記基板上に正立等倍像として結像させる第2のマイクロレンズアレイと、
前記基板アライメントマークの反射光と前記マスクアライメントマークの反射光とを前記基板側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有することを特徴とする露光装置用のアライメント装置。 - 前記第1のマイクロレンズアレイと前記第2のマイクロレンズアレイとは、1枚の共有マイクロレンズアレイにより構成され、前記アライメント用の光は前記共有マイクロレンズアレイを前記基板アライメントマークと前記マスクアライメントマークとの間に移動させた状態で照射されることを特徴とする請求項1又は2に記載の露光装置用のアライメント装置。
- 前記第1のマイクロレンズアレイと前記第2のマイクロレンズアレイとは、露光光が照射される露光位置と、アライメント光が照射されるアライメント位置とを包含する1枚の共有マイクロレンズアレイにより構成されていることを特徴とする請求項1又は2に記載の露光装置用のアライメント装置。
- 前記第1のマイクロレンズアレイと前記第2のマイクロレンズアレイとは、別体で構成されていることを特徴とする請求項1又は2に記載の露光装置用のアライメント装置。
- 前記基板アライメントマーク及び前記マスクアライメントマークの一方が、枠状をなし、他方がアライメント時に前記枠の中心に位置する矩形状をなすことを特徴とする請求項1乃至5のいずれか1項に記載の露光装置用のアライメント装置。
- 前記アライメント光源は、前記カメラが検出する光の光軸と同軸的にアライメント光を出射することを特徴とする請求項1乃至6のいずれか1項に記載の露光装置用のアライメント装置。
- 前記アライメント光源と、前記カメラとは、別体であり、前記アライメント光源からの光の光軸と、前記カメラにて検出される反射光の光軸とは、同軸ではないことを特徴とする請求項1乃至6のいずれか1項に記載の露光装置用のアライメント装置。
- 複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、を有するマイクロレンズアレイを使用し、このマイクロレンズアレイを、露光対象の基板と、この基板に露光するパターンが設けられたマスクとの間に配置して、前記マスクと前記基板とを相対的に位置合わせする際に使用されるアライメントマークであって、
前記基板又は前記マスクに形成され、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とするアライメントマーク。 - 前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に連なって配置されていることを特徴とする請求項9に記載のアライメントマーク。
- 前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に、前記多角形の角部を含むようにして、断続的に配置されていることを特徴とする請求項9に記載のアライメントマーク。
- 前記第2群のマーク片は、異なる多角形上に位置するものの太さが、相違することを特徴とする請求項10又は11に記載のアライメントマーク。
- 露光装置に供される基板又はマスクに、それらの位置調整のために形成され、線対称の多角形形状の図形からなるアライメントマークであって、
前記基板と前記マスクとの間にマトリクス状に配置された複数個のレンズの夫々多角視野絞りの開口部を構成するいずれかの縁辺と平行にならないように配置された多角形形状部と、
前記多角形形状部の中心から、前記多角形形状部を横断する少なくとも6本の放射線からなる放射線部と、
を有し、
前記多角形形状部及び前記放射線部の全体が、前記レンズの大きさより大きく、4個の隣接するレンズの全体の大きさより小さいことを特徴とするアライメントマーク。 - マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記基板に設けられた基板アライメントマークから反射したアライメント光の反射光を前記マスク上に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクに設けられたマスクアライメントマークに前記マスク側からアライメント光を同時に照射したときに、前記マスクアライメントマークから反射した反射光及び前記マスク上に結像した前記基板アライメントマークの正立等倍像を前記マスク側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、を有し、
前記基板アライメントマークは、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とする露光装置用のアライメント装置。 - マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記マスクに設けられたマスクアライメントマークから反射したアライメント光の反射光を前記基板上に正立等倍像として結像させるマイクロレンズアレイと、
前記マスクアライメントマーク及び前記基板に設けられた基板アライメントマークに前記基板側からアライメント光を同時に照射したときに、前記基板アライメントマークから反射した反射光及び前記基板上に結像した前記マスクアライメントマークの正立等倍像を前記基板側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マスクアライメントマークは、
前記多角視野絞りの開口の全ての辺に対して夫々傾斜する方向に延びる複数本の線状のマーク片を有し、前記マーク片はアライメント中心から放射状に延びる複数個の第1群のマーク片と、前記アライメント中心を中心とする多角形の辺上に延びる複数個の第2群のマーク片とからなり、前記マーク片のうち、複数個のマーク片がいずれかの前記多角視野絞りの中に存在するように、前記多角視野絞り及び前記マーク片の位置が決められていることを特徴とする露光装置用のアライメント装置。 - 前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に連なって配置されていることを特徴とする請求項14又は15に記載の露光装置。
- 前記第2群のマーク片は、前記アライメント中心を共通の中心とする異なる大きさの複数個の多角形の辺上に、前記多角形の角部を含むようにして、断続的に配置されていることを特徴とする請求項14又は15に記載の露光装置。
- 前記第2群のマーク片は、異なる多角形上に位置するものの太さが、相違することを特徴とする請求項16又は17に記載の露光装置。
- 複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有するマイクロレンズアレイを使用し、このマイクロレンズアレイを、露光対象の基板と、この基板に露光するパターンが設けられたマスクとの間に配置して、前記マスクと前記基板とを相対的に位置合わせする際に使用されるアライメントマークであって、
前記基板又は前記マスクに形成され、
前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とするアライメントマーク。 - 前記マイクロレンズアレイは、そのマイクロレンズが露光装置のスキャン方向に垂直の方向に1列に整列して配置されており、前記第1の方向はこのスキャン方向に垂直の方向であり、マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対して傾斜していることを特徴とする請求項19記載のアライメントマーク。
- 前記マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対し45°の角度をなすことを特徴とする請求項20に記載のアライメントマーク。
- マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記基板に設けられた基板アライメントマークから反射したアライメント光の反射光を前記マスク上に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクに設けられたマスクアライメントマークに前記マスク側からアライメント光を同時に照射したときに、前記マスクアライメントマークから反射した反射光及び前記マスク上に結像した前記基板アライメントマークの正立等倍像を前記マスク側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有し、
前記マスクアライメントマーク又は前記基板アライメントマークは、前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とする露光装置用のアライメント装置。 - マスクに形成された露光パターンを基板に転写する露光装置用のアライメント装置において、
露光光の出射と兼用又は独立のアライメント光の出射用のアライメント光源と、
前記マスクと前記基板との間に配置され、前記マスクに設けられたマスクアライメントマークから反射したアライメント光の反射光を前記基板上に正立等倍像として結像させるマイクロレンズアレイと、
前記マスクアライメントマーク及び前記基板に設けられた基板アライメントマークに前記基板側からアライメント光を同時に照射したときに、前記基板アライメントマークから反射した反射光及び前記基板上に結像した前記マスクアライメントマークの正立等倍像を前記基板側から検出するカメラと、
このカメラにより検出される前記基板アライメントマークと前記マスクアライメントマークとが一致するように、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、前記単位マイクロレンズアレイ間の露光光の最大拡大部の少なくとも一部に配置され円形の開口を有し各マイクロレンズの開口数を規定する開口絞りと、前記マイクロレンズアレイの上面における前記マイクロレンズ以外の部分を遮光する遮光膜と、を有し、
前記マスクアライメントマーク又は前記基板アライメントマークは、前記マイクロレンズが直線上に配列される第1の方向に対し、マークを構成する全ての辺が傾斜していることを特徴とする露光装置用のアライメント装置。 - 前記マイクロレンズアレイは、そのマイクロレンズが露光装置のスキャン方向に垂直の方向に1列に整列して配置されており、前記第1の方向はこのスキャン方向に垂直の方向であり、マークを構成する全ての辺は、前記スキャン方向に垂直の方向に対して傾斜していることを特徴とする請求項22又は23に記載の露光装置。
- 前記マークを構成する全ての片は、前記スキャン方向に垂直の方向に対し45°の角度をなすことを特徴とする請求項24に記載の露光装置。
- スキャン露光によりマスクのパターンを基板に転写するマイクロレンズアレイを使用したスキャン露光装置に設けられ、前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、アライメント用の光を照射するアライメント光源と、
前記基板と前記マスクとの間に介在して、前記基板アライメントマーク又は前記マスクアライメントマークを夫々前記マスク又は前記基板に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクアライメントマークを、一方は反射光の像及び他方は正立等倍像として撮像するカメラと、
このカメラにより撮像された前記基板アライメントマークと前記マスクアライメントマークとに基づいて、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、
この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、
前記単位マイクロレンズアレイ間の開口数を制限する開口絞りと、を有し、
前記複数個のマイクロレンズがスキャン露光方向に直交する方向に配列されてマイクロレンズ列を構成し、このマイクロレンズ列が前記スキャン露光方向に複数列配置されると共に、前記スキャン露光方向に隣接する2列のマイクロレンズ列の相互間は前記スキャン露光方向に直交する方向に偏倚するように配置されたものであり、
前記制御装置は、前記マイクロレンズアレイを前記基板及び前記マスクに対して相対的に前記スキャン露光方向に移動させると共に、前記マイクロレンズ列の配列ピッチの整数倍でない間隔で前記カメラにより前記基板アライメントマークの像及び前記マスクアライメントマークの像を複数回撮像し、撮像された複数個の像を重ね合わせて、この重ね合わされた基板アライメントマークの像及びマスクアライメントマークの像をアライメントに使用することを特徴とする露光装置用のアライメント装置。 - スキャン露光によりマスクのパターンを基板に転写するマイクロレンズアレイを使用したスキャン露光装置に設けられ、前記マスクと前記基板とを相対的位置合わせする露光装置用のアライメント装置において、
前記基板に設けられた基板アライメントマークと前記マスクに設けられたマスクアライメントマークに、アライメント用の光を照射するアライメント光源と、
前記基板と前記マスクとの間に介在して、前記基板アライメントマーク又は前記マスクアライメントマークを夫々前記マスク又は前記基板に正立等倍像として結像させるマイクロレンズアレイと、
前記基板アライメントマーク及び前記マスクアライメントマークを、一方は反射光の像及び他方は正立等倍像として撮像するカメラと、
このカメラにより撮像された前記基板アライメントマークと前記マスクアライメントマークとに基づいて、前記マスク及び/又は前記基板の位置を調節する制御装置と、
を有し、
前記マイクロレンズアレイは、
複数個のマイクロレンズが2次元的に配置されて構成され相互に積層された複数枚の単位マイクロレンズアレイと、
この単位マイクロレンズアレイ間の反転結像位置に配置され多角形の開口を有する多角視野絞りと、
前記単位マイクロレンズアレイ間の開口数を制限する開口絞りと、を有し、
前記複数個のマイクロレンズがスキャン露光方向に直交する方向に配列されてマイクロレンズ列を構成し、このマイクロレンズ列が前記スキャン露光方向に複数列配置されると共に、前記スキャン露光方向に隣接する2列のマイクロレンズ列の相互間は前記スキャン露光方向に直交する方向に偏倚するように配置されたものであり、
前記制御装置は、前記マイクロレンズアレイを前記基板及び前記マスクに対して相対的にスキャン露光方向に移動させると共に、前記カメラにより前記基板アライメントマークの像及び前記マスクアライメントマークの像を連続的に動画として撮像し、連続的に撮像された基板アライメントマークの像及びマスクアライメントマークの像をアライメントに使用することを特徴とする露光装置用のアライメント装置。 - 前記基板アライメントマーク及び前記マスクアライメントマークの一方が、枠状をなし、他方がアライメント時に前記枠の中心に位置する矩形状をなすことを特徴とする請求項26又は27に記載の露光装置用のアライメント装置。
- 前記アライメント光源は、前記カメラが検出する光の光軸と同軸的にアライメント光を出射することを特徴とする請求項26乃至28のいずれか1項に記載の露光装置用のアライメント装置。
- 前記マイクロレンズアレイは、露光用のマイクロレンズアレイと共用することを特徴とする請求項26乃至29のいずれか1項に記載の露光装置用のアライメント装置。
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JP2004103644A (ja) * | 2002-09-05 | 2004-04-02 | Sumitomo Heavy Ind Ltd | 近接したマスクとウエハの位置検出装置と方法 |
JP2007102094A (ja) * | 2005-10-07 | 2007-04-19 | V Technology Co Ltd | 露光装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9921482B2 (en) | 2013-07-01 | 2018-03-20 | V Technology Co., Ltd. | Exposure device and lighting unit |
WO2023158194A1 (ko) * | 2022-02-15 | 2023-08-24 | 삼성디스플레이 주식회사 | 마스크 및 이의 제조 방법 |
Also Published As
Publication number | Publication date |
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CN103858208B (zh) | 2016-08-24 |
TW201706730A (zh) | 2017-02-16 |
TW201308026A (zh) | 2013-02-16 |
KR101941323B1 (ko) | 2019-01-22 |
TWI570518B (zh) | 2017-02-11 |
US9297642B2 (en) | 2016-03-29 |
CN103858208A (zh) | 2014-06-11 |
US20140168648A1 (en) | 2014-06-19 |
KR20140054219A (ko) | 2014-05-08 |
TWI606316B (zh) | 2017-11-21 |
TW201714027A (zh) | 2017-04-16 |
TWI598702B (zh) | 2017-09-11 |
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