NL2029773B1 - Composite lithography alignment system and method based on super-resolution imaging of dielectric microspheres - Google Patents
Composite lithography alignment system and method based on super-resolution imaging of dielectric microspheres Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 43
- 239000004005 microsphere Substances 0.000 title claims abstract description 41
- 239000002131 composite material Substances 0.000 title claims abstract description 16
- 238000001459 lithography Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 241000276498 Pollachius virens Species 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims abstract description 14
- 238000007781 pre-processing Methods 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000000007 visual effect Effects 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012576 optical tweezer Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Disclosed is a composite lithography alignment system and method based on super- resolution imaging of dielectric microspheres. The system comprises a beam splitter; one end of the beam splitter is provided with a micro objective, a mask and a silicon wafer successively, and the other end of the beam splitter is provided with a low pass filter, a tube lens and a CMOS camera successively; a laser is installed on one side of the beam splitter; a Kohler illumination system is arranged between the laser and the beam splitter; one end of the mask is provided with a dielectric microsphere layer; the mask is provided with a first alignment label, a second alignment label and a third alignment label; and the silicon wafer is provided with a fourth alignment label, a fifth alignment label and sixth alignment labels which are matched with the labels on the mask respectively. Through arrangement of optical devices or subsystems such as the low pass filter, the Kohler illumination system and the dielectric microsphere layer in the present invention, the resolution of alignment images is improved; and the high accuracy alignment of the mask and the silicon wafer is realized through the steps of coarse alignment fine alignment pre-processing and fine alignment.
Description
RESOLUTION IMAGING OF DIELECTRIC MICROSPHERES Technical Field The present invention relates to the technical field of nanolithography, and particularly relates to a composite lithography alignment system and method based on super-resolution imaging of dielectric microspheres. Background With the deep development of nanotechnology, the requirements for resolution or minimum feature size in various fields are increasingly enhanced, and higher requirements are put forward for the lithography alignment system. At present, lithography alignment can use light intensity information alignment and image information alignment. Most of the mainstream lithography machines use the light intensity information alignment which has high alignment accuracy, but has high requirements for the light source, alignment light path, exposure light path, projection objective lens and light information processing technology, resulting in high operating environment requirements, high experimental complexity and high cost. The image information alignment has relatively simple operation principle, low cost and high efficiency, but has the alignment accuracy which is not as good as that of the light intensity information alignment method. Summary In view of the defects of the prior art, the present invention provides a composite lithography alignment system and method based on super-resolution imaging of dielectric microspheres, with high alignment accuracy. To achieve the above purpose of the present invention, the present invention adopts the following technical solution: A composite lithography alignment system based on super-resolution imaging of dielectric microspheres is provided, comprising a beam splitter; both ends of the beam splitter are respectively provided with a CMOS camera and a silicon wafer; a low pass filter and a tube lens are arranged successively between the beam splitter and the CMOS camera; a micro objective and a mask are arranged successively between the beam splitter and the silicon wafer; one end of the mask is provided with a dielectric microsphere layer; a laser is installed on one side of the beam splitter; a Kohler illumination system is arranged between the laser and the beam splitter; the mask is provided with a first alignment label, a second alignment label and a third alignment label; the silicon wafer is provided with a fourth alignment label, a fifth alignment label and sixth alignment labels; and the first alignment label, the second alignment label and the third alignment label are matched with the fourth alignment label, the fifth alignment label and the sixth alignment label respectively. The beneficial effects of adopting the above technical solution are: the micro objective and the CMOS camera capture and image the alignment labels on the mask and the silicon wafer. The output alignment images are convenient to observe the position errors of the alignment labels, and a basis is provided for the alignment of the alignment labels. The super-resolution imaging is conducted on the alignment labels by the dielectric microsphere layer. The super- resolution imaging can break through the diffraction limit and improve the resolution with low cost and simple operation. The low pass filter is installed to filter out other wavelengths of light, e.g., to filter out laser light generated by optical tweezers in the operation of the microspheres, to avoid the impact of other wavelengths of light on imaging, to facilitate the improvement of the imaging quality. The Kohler illumination system is arranged to improve the uniformity of light energy distribution of the light source and improve the quality of the super-resolution imaging. The fourth alignment label is matched with the first alignment label for coarse alignment. The fifth alignment label is matched with the second alignment label for fine alignment pre-processing, and the planes on which the mask and the silicon wafer are located are horizontal. The sixth alignment label is matched with the third alignment label for fine alignment, which is convenient for more accurately observing and correcting the position errors of the alignment labels on the horizontal plane to improve the alignment accuracy.
Further, the Kohler illumination system comprises a first lens, a visual field diaphragm, a second lens, an aperture diaphragm and a third lens; and the first lens, the second lens and the third lens are condensing lenses. The light source of the laser is imaged in the visual field diaphragm after passing through the third lens, the aperture diaphragm and the second lens. In addition, the visual field diaphragm is located in the front focal plane of the first lens, and the first lens images the visual field diaphragm at the front focal plane of the first lens into an incident window of the micro objective through the beam splitter. The Kohler illumination system is used to improve the uniformity of light energy distribution of the light source and improve the quality of the super-resolution imaging.
Further, the first alignment label and the fourth alignment label respectively comprise two cross labels and two cross frames; the cross labels of the first alignment label are matched with the cross frames of the fourth alignment label; the first alignment label is positioned at four corners of the mask; and two cross labels of the first alignment label are arranged on two opposite corners of the mask.
The first alignment label and the fourth alignment label are used for coarse alignment.
When the coarse alignment is completed, the cross labels of the first alignment label are completely filled in the two cross frames of the fourth alignment label and the two cross labels of the fourth alignment label are completely filled in the two cross frames of the first alignment label.
Further, the second alignment label and the fifth alignment label respectively comprise two gratings, and the arrangement directions of the two gratings are perpendicular to each other; the grating period of the second alignment label is the same as the grating period of the fifth alignment label, and a relative position is half a period; one grating of the second alignment label is arranged on the front or rear side of the mask, and the other grating is arranged on the left or right side of the mask.
When the second alignment label and the fifth alignment label are not in the horizontal plane, the gratings of the second alignment label and the fifth alignment label will form differential gratings, so that moire fringes with amplified line width are observed in the alignment images outputted by the CMOS camera. When both the second alignment label and the fifth alignment label are in the horizontal plane, the gratings of the second alignment label are embedded into the grating gap of the fifth alignment label.
Further, the third alignment label is a regular hexagonal ring arranged in the centre of the mask; the sixth alignment labels are two regular hexagonal wire frames arranged in the centre of the silicon wafer; and the two regular hexagonal wire frames are concentric.
The beneficial effects of adopting the above technical solution are: the regular hexagonal alignment labels have the advantage of low signal-to-noise ratio compared with grating alignment labels. Through the regular hexagonal alignment labels, the multi-direction position errors on the horizontal plane are displayed in the alignment images, and high accuracy alignment is carried out with the cooperation of the dielectric microspheres.
Further, the dielectric microsphere layer comprises deionized water and PS microspheres. Due to the existence of the diffraction limit, when the width of the alignment labels is reduced by half of the observation light wavelength, the imaging of the CMOS camera will not be resolved; and the dielectric microspheres can break through the diffraction limit to conduct super-resolution imaging.
An alignment method by the composite lithography alignment system based on super- resolution imaging of dielectric microspheres is also provided, comprising the following steps: S1: opening the laser, imaging the first alignment label, the second alignment label, the third alignment label, the fourth alignment label, the fifth alignment label and the sixth alignment labels onthe CMOS camera, and outputting images by the CMOS camera; S2: using the images outputted by the CMOS camera to fill two cross labels of the first alignment label in two cross frames of the fourth alignment label and fill two cross labels of the fourth alignment label in two cross frames of the first alignment label to complete coarse alignment; and outputting coarse alignment images by the CMOS camera; S3: embedding the gratings of the mask into the grating gap of the silicon wafer by using the coarse alignment images to ensure that no moire fringe with amplified line width is produced, to complete fine alignment pre-processing ;and outputting pre-processing images by the CMOS camera;
S4: nesting the regular hexagonal ring at the centre of the mask between two regular hexagonal frames at the centre of the silicon wafer by using the pre-processing images; S5: adding dielectric microspheres above the mask to conduct super-resolution imaging; and conducting correcting again to nest the regular hexagonal ring at the centre of the mask between two regular hexagonal frames at the centre of the silicon wafer again to complete fine alignment. The present invention has the following beneficial effects: the Kohler illumination system is used to improve the uniformity of the alignment light source and improve the quality of the super- resolution imaging. The low pass filter is installed to filter out other wavelengths of light, to avoid the impact of other wavelengths of light on imaging, to facilitate the improvement of the imaging quality. The fourth alignment label is matched with the first alignment label for coarse alignment. The fifth alignment label is matched with the second alignment label for fine alignment pre- processing, and the planes on which the mask and the silicon wafer are located are horizontal. The sixth alignment label is matched with the third alignment label for fine alignment. The super- resolution imaging is conducted on the alignment labels by the dielectric microsphere layer. The super-resolution imaging can break through the diffraction limit and further improve the resolution, so as to more accurately observe and correct the position errors of the alignment labels on the horizontal plane to improve the overall alignment accuracy of the lithography system. Description of Drawings Fig. 1 is a structural schematic diagram of an embodiment of the present invention; Fig. 2 is a structural schematic diagram of a mask in an embodiment of the present invention; Fig. 3 is a structural schematic diagram of a silicon wafer in an embodiment of the present invention; and Fig. 4 is an image outputted by a CMOS camera after alignment in the present invention. In the figures, 1 laser; 2 third lens; 3 aperture diaphragm; 4 second lens; 5 visual field diaphragm; 6 first lens; 7 beam splitter; 8 micro objective; 9 dielectric microsphere layer; 10 mask; 11 silicon wafer; 12 low pass filter; 13 tube lens; 14 CMOS camera; 15 first alignment label; 16 second alignment label; 17 third alignment label; 18 fourth alignment label; 19 fifth alignment label; 20 sixth alignment label.
Detailed Description Specific embodiments of the present invention are described below to facilitate those skilled in the art to understand the present invention. However, it should be understood that the present invention is not limited to the scope of the specific embodiments. For those ordinary skilled in the art, as long as various changes are within the spirit and scope of the present invention defined and determined by the attached claims, these changes are obvious. All inventions which utilize the conception of the present invention are protected.
As shown in Figs. 1-3, a composite lithography alignment system based on super-resolution imaging of dielectric microspheres comprises a beam splitter 7. Both ends of the beam splitter 7 are respectively provided with a CMOS camera 14 and a silicon wafer 11; a low pass filter 12 and a tube lens 13 are arranged successively between the beam splitter 7 and the CMOS camera 14; 5 a micro objective 8 and a mask 10 are arranged successively between the beam splitter 7 and the silicon wafer 11; one end of the mask 10 is provided with a dielectric microsphere layer 9; a laser 1 is installed on one side of the beam splitter 7; the laser 1 emits laser light with wavelength of 405 nm; a Kohler illumination system is arranged between the laser 1 and the beam splitter 7; the mask 10 is provided with a first alignment label 15, a second alignment label 16 and a third alignment label 17; the silicon wafer 11 is provided with a fourth alignment label 18, a fifth alignment label 19 and sixth alignment labels 20; and the first alignment label 15, the second alignment label 16 and the third alignment label 17 are matched with the fourth alignment label 18, the fifth alignment label 19 and the sixth alignment label 20 respectively.
The micro objective 8 and the CMOS camera 14 capture and image the alignment labels on the mask 10 and the silicon wafer 11. The output alignment images are convenient to observe the position errors of the alignment labels, and a basis is provided for the alignment of the alignment labels. The super-resolution imaging is conducted on the alignment labels by the dielectric microsphere layer ©. The super-resolution imaging can break through the diffraction limit and improve the resolution with low cost and simple operation. The low pass filter 12 is installed to filter out other wavelengths of light, e.g., to filter out laser light generated by optical tweezers in the operation of the microspheres, to avoid the impact of other wavelengths of light on imaging, to facilitate the improvement of the imaging quality. The Kohler illumination system is arranged to improve the uniformity of light energy distribution of the light source and improve the quality of the super-resolution imaging. The fourth alignment label 18 is matched with the first alignment label 15 for coarse alignment. The fifth alignment [abel 19 is matched with the second alignment label 16 for fine alignment pre-processing, and the planes on which the mask 10 and the silicon wafer 11 are located are horizontal. The sixth alignment label 20 is matched with the third alignment label 17 for fine alignment, which is convenient for more accurately observing and correcting the position errors of the alignment labels on the horizontal plane to improve the alignment accuracy. As an optional embodiment, the Kohler illumination system comprises a first lens 8, a visual field diaphragm 5, a second lens 4, an aperture diaphragm 3 and a third lens 2; and the first lens 6, the second lens 4 and the third lens 2 are condensing lenses. The light source of the laser 1 is imaged in the visual field diaphragm 5 after passing through the third lens 2, the aperture diaphragm 3 and the second lens 4. In addition, the visual field diaphragm 5 is located in the front focal plane of the first lens 6, and the first lens 6 images the visual field diaphragm 5 at the front focal plane of the first lens into an incident window of the micro objective 8 through the beam splitter 7. The Kohler illumination system is used to improve the uniformity of light energy distribution of the light source and improve the quality of the super-resolution imaging.
As an optional embodiment, the first alignment label 15 and the fourth alignment label 18 respectively comprise two cross labels and two cross frames; the lengths L3 and L4 of the component edges of the cross frames are 1000nm and 800nm respectively; the cross labels of the first alignment label 15 are matched with the cross frames of the fourth alignment label 18; the first alignment label 15 is positioned at four corners of the mask 10; and two cross labels of the first alignment label 15 are arranged on two opposite corners of the mask. The first alignment label 15 and the fourth alignment label 18 are arranged for coarse alignment. When the coarse alignment is completed, the cross labels of the first alignment label 15 are completely filled in the two cross frames of the fourth alignment label 18 and the two cross labels of the fourth alignment label 18 are completely filled in the two cross frames of the first alignment label
15.
As an optional embodiment, the second alignment label 16 and the fifth alignment label 19 respectively comprise two gratings, and the arrangement directions of the two gratings of the same alignment label are perpendicular to each other; the grating period of the second alignment label 16 is the same as the grating period of the fifth alignment label 19, and is 200nm, with a total of 25 periods; a relative position is half a period; one grating of the second alignment label 16 is arranged on the front or rear side of the mask 10, and the other grating is arranged on the left or right side of the mask 10.
When the second alignment label 18 and the fifth alignment label 19 are not in the horizontal plane, the gratings of the second alignment label 16 and the fifth alignment label 19 will form differential gratings, so that moire fringes with amplified line width are observed in the alignment images outputted by the CMOS camera 14. When both the second alignment label 16 and the fifth alignment label 19 are in the horizontal plane, the gratings of the second alignment label 16 are embedded into the grating gap of the fifth alignment label 19.
As an optional embodiment, the third alignment label 17 is a regular hexagonal ring arranged in the centre of the mask 10; the sixth alignment labels 18 are two regular hexagonal wire frames arranged in the centre of the silicon wafer 11; and the two regular hexagonal wire frames are concentric. Relative to the grating alignment labels, the regular hexagonal alignment labels have the advantage of low signal-to-noise ratio. Through the regular hexagonal alignment labels, the multi-direction position errors on the horizontal plane are displayed in the alignment images, and high accuracy alignment is carried out with the cooperation of the dielectric microspheres.
As an optional embodiment, the line width L1 of the regular hexagonal wire frames is 100nm, and the edge length L2 is 500nm. The regular hexagonal wire frames have small line width and are sensitive to the multi-directional offset of the horizontal plane, which is beneficial to improve the alignment accuracy.
As an optional embodiment, the dielectric microsphere layer 9 comprises deionized water and PS microspheres with refractive index of 1.59. Due to the existence of the diffraction limit, when the width of the alignment labels is reduced by half of the observation light wavelength, the imaging of the CMOS camera 14 will not be resolved; and the dielectric microspheres can break through the diffraction limit to conduct super-resolution imaging. An alignment method by the composite lithography alignment system based on super- resolution imaging of dielectric microspheres comprises the following steps: S1: opening the laser 1, imaging the first alignment label 15, the second alignment label 16, the third alignment label 17, the fourth alignment label 18, the fifth alignment label 19 and the sixth alignment labels 20 on the CMOS camera 14, and outputting images by the CMOS camera 14; S2: using the images outputted by the CMOS camera to fill two cross labels of the first alignment label 15 in two cross frames of the fourth alignment label 18 and fill two cross labels of the fourth alignment label 18 in two cross frames of the first alignment label 15 to complete coarse alignment; and outputting coarse alignment images by the CMOS camera 14; S3: embedding the gratings of the mask 10 into the grating gap of the silicon wafer 11 by using the coarse alignment images to ensure that no moire fringe with amplified line width is produced, to complete fine alignment pre-processing; and outputting pre-processing images by the CMOS camera 14; S4: nesting the regular hexagonal ring at the centre of the mask 10 between two regular hexagonal frames at the centre of the silicon wafer 11 by using the pre-processing images; S5: adding dielectric microspheres above the mask 10 to conduct super-resolution imaging; and conducting correcting again to nest the regular hexagonal ring at the centre of the mask 10 between two regular hexagonal frames at the centre of the silicon wafer 11 again to complete fine alignment.
The alignment accuracy in the present embodiment can reach 30-50 nm, and the resolution of the traditional optical microscope can only reach about 200nm generally. Compared with the traditional optical microscope, the present invention greatly improves the resolution and the alignment accuracy. If the wavelength of the alignment light source, microsphere size and the minimum line width of central fine alignment patterns can be further reduced, the alignment accuracy can reach about 10 nm.
Those ordinary skilled in the art will be aware that embodiments described herein are intended to assist the reader in understanding the principles of the present invention and should be understood that the protection scope of the present invention is not limited to the particular explanation and embodiments. Various other specific modifications and combinations can be made by those ordinary skilled in the art without departing from the essence of the present invention according to the technical enlightenments disclosed by the present invention, and these madifications and combinations shall still fall within the protection scape of the present invention.
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