WO2013020309A1 - Electronic component embedded circuit board and manufacturing method thereof - Google Patents

Electronic component embedded circuit board and manufacturing method thereof Download PDF

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Publication number
WO2013020309A1
WO2013020309A1 PCT/CN2011/079032 CN2011079032W WO2013020309A1 WO 2013020309 A1 WO2013020309 A1 WO 2013020309A1 CN 2011079032 W CN2011079032 W CN 2011079032W WO 2013020309 A1 WO2013020309 A1 WO 2013020309A1
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Prior art keywords
electronic component
aluminum
aluminum electrode
circuit board
electrode
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PCT/CN2011/079032
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French (fr)
Chinese (zh)
Inventor
谷新
霍如肖
丁鲲鹏
杨之诚
孔令文
蔡坚
鲍平华
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深南电路有限公司
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Publication of WO2013020309A1 publication Critical patent/WO2013020309A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0191—Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • H05K2203/1469—Circuit made after mounting or encapsulation of the components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

Provided is a manufacturing method for an electronic component (400) embedded circuit board, including: embedding an electronic component (400) into a through-hole of a core layer on a circuit board, with one side of the electronic component (400) having an aluminium electrode (401); and zincing the aluminum electrode (401), and nickelling the surface of the zinced aluminium electrode (401). Also provided is a corresponding electronic component (400) embedded circuit board. Since a zinc and nickel protection layer (403) is formed on the surface of an aluminium electrode (401) by applying zincing processing and nickelling processing in the technical solution of the present invention, the aluminium electrode (401) will not be damaged by laser or any kind of acid or alkaline chemical solutions during the subsequent circuit board manufacturing flow.

Description

电子元件埋入式电路板及其制造方法  Electronic component embedded circuit board and manufacturing method thereof
本申请要求于 2011 年 8 月 10 日提交中国专利局、 申请号为 201110228710.6、 发明名称为 "电子元件埋入式电路板及其制造方法" 的中国 专利申请的优先权， 其全部内容通过引用结合在本申请中。  This application claims priority to Chinese Patent Application No. 201110228710.6, entitled "Electronic Component Buried Circuit Board and Its Manufacturing Method", filed on August 10, 2011, the entire contents of which are incorporated by reference. In this application.
技术领域 Technical field
本发明涉及电路板制造技术领域，具体涉及一种电子元件埋入式电路板及 其制造方法。  The present invention relates to the field of circuit board manufacturing technology, and in particular to an electronic component embedded circuit board and a method of fabricating the same.
背景技术 Background technique
常规的电源电子模块中， 电源半导体芯片， 例如 MOSFET或 IGBT芯片 通常采用引线键合方式与基板连接。 然而， 由于其较长的互连尺寸， 在开关电 源中容易产生较大的应力和较大的电磁干扰（EMI )噪声。 另外， 随着电力电 子半导体器件的快速发展， 开关频率越来越高， 装置体积进一步减小， 寄生参 数对电源性能和可靠性的影响也越来越显著， 器件的功耗也越来越大。将电源 芯片直接埋入印刷线路板内部， 可以有效解决以上问题。  In a conventional power supply electronic module, a power semiconductor chip, such as a MOSFET or an IGBT chip, is usually connected to the substrate by wire bonding. However, due to its long interconnect size, large stresses and large electromagnetic interference (EMI) noise are easily generated in the switching power supply. In addition, with the rapid development of power electronic semiconductor devices, the switching frequency is getting higher and higher, the device volume is further reduced, the influence of parasitic parameters on power supply performance and reliability is becoming more and more significant, and the power consumption of the device is also increasing. . The above problem can be effectively solved by directly embedding the power chip inside the printed circuit board.
但是， 电源芯片通常包含铝材质的电极（以后称为铝电极）， 而铝的化学 性质决定了铝电极不能与电路板的制作工艺兼容，如铝电极表面不能采用激光 加工盲孔， 铝电极在蚀刻等工艺中会被化学物质腐蚀损坏等。  However, the power chip usually contains an aluminum electrode (hereinafter referred to as an aluminum electrode), and the chemical nature of the aluminum determines that the aluminum electrode cannot be compatible with the manufacturing process of the circuit board. For example, the surface of the aluminum electrode cannot be laser-processed, and the aluminum electrode is In the process of etching and the like, it may be corroded and damaged by chemical substances.
发明内容 Summary of the invention
本发明实施例提供一种电子元件埋入式电路板及其制造方法，可以使带有 铝电极的电子元件与电路板的制作工艺兼容。  Embodiments of the present invention provide an electronic component embedded circuit board and a manufacturing method thereof, which can make an electronic component with an aluminum electrode compatible with a manufacturing process of a circuit board.
一种电子元件埋入式电路板的制造方法， 包括：  A manufacturing method of an electronic component embedded circuit board, comprising:
将电子元件埋入电路板的芯层开设的通孔中，所述电子元件的一面具有铝 电极；  Embedding an electronic component into a through hole formed in a core layer of the circuit board, the electronic component having an aluminum electrode on one side thereof;
对所述铝电极进行辞化处理， 并在辞化处理后的铝电极表面镀镍。  The aluminum electrode was subjected to a rectification treatment, and nickel was plated on the surface of the aluminum electrode after the rectification treatment.
一种电子元件埋入式电路板， 包括：  An electronic component embedded circuit board, comprising:
开设有通孔的芯层和埋入所述通孔中的电子元件；  a core layer having a through hole and electronic components buried in the through hole;
所述电子元件的一面具有铝电极，所述铝电极表面具有辞化和镀镍处理后 得到的辞镍保护层。 镍处理的技术方案，辞化和镀镍处理后的铝电极表面增加了辞镍保护层，在后 续的电路板制造流程中包括激光盲孔加工、 蚀刻等工艺中， 不会被激光、 各种 酸性或碱性的化学溶液损坏。 One surface of the electronic component has an aluminum electrode having a nickel protective layer obtained by rectifying and nickel plating. The technical solution of nickel treatment, the surface of the aluminum electrode after the rectification and nickel plating has increased the nickel protective layer, and in the subsequent circuit board manufacturing process, including laser blind hole processing, etching, etc., it will not be laser, various Acidic or alkaline chemical solution is damaged.
附图说明 DRAWINGS
图 la是本发明一个实施例电子元件埋入式电路板的制造方法的流程图； 图 lb是本发明另一实施例电子元件埋入式电路板的制造方法的流程图； 图 2是具有铝电极的电子元件的示意图； 具体实施方式  1a is a flow chart showing a method of manufacturing an electronic component embedded circuit board according to an embodiment of the present invention; FIG. 1b is a flow chart showing a method of manufacturing an electronic component embedded circuit board according to another embodiment of the present invention; Schematic diagram of electronic components of an electrode;
本发明实施例提供一种电子元件埋入式电路板及其制造方法，采用对埋入 电路板的电子元件的铝电极进行辞化处理和镀镍处理的技术方案，由辞化和镀 镍处理后的得到的辞镍保护层对铝电极进行保护，使铝电极在电路板制造流程 中包括激光盲孔加工、 蚀刻等工艺中， 不会被激光、 各种酸性或碱性的化学溶 液损坏。 以下分别进行详细说明。 请参考图 la, 本发明实施例提供一种电子元件埋入式电路板的制造方法， 包括：  Embodiments of the present invention provide an electronic component embedded circuit board and a manufacturing method thereof, which adopt a technical scheme for performing a rectification process and a nickel plating process on an aluminum electrode of an electronic component embedded in a circuit board, and are processed by re-rendering and nickel plating. After the obtained nickel protective layer protects the aluminum electrode, the aluminum electrode is not damaged by laser, various acidic or alkaline chemical solutions in the process of manufacturing the circuit board including laser blind hole processing and etching. The details are described below separately. Referring to FIG. 1 , an embodiment of the present invention provides a method for manufacturing an electronic component embedded circuit board, including:
110、 将电子元件埋入电路板的芯层开设的通孔中， 所述电子元件的一面 具有铝电极。  110. The electronic component is embedded in a through hole formed in a core layer of the circuit board, and one side of the electronic component has an aluminum electrode.
如图 2所示， 所说的电子元件 400的两个相对面上分别具有铝电极 401和非 铝电极 402。 该电子元件 400可以是电源芯片， 也可以是任何其它类型的元件。 所说的非铝电极 402通常是银-镍材质的电极， 也可以是其它非铝金属如镍、 铜 等材质的电极。  As shown in Fig. 2, the opposite faces of the electronic component 400 have an aluminum electrode 401 and a non-aluminum electrode 402, respectively. The electronic component 400 can be a power chip or any other type of component. The non-aluminum electrode 402 is usually an electrode of silver-nickel or an electrode of other non-aluminum metal such as nickel or copper.
如图 3a所示，所说的电路板的芯层可以是单面覆铜板，包括有机树脂层 501 和覆盖在有机树脂层 501—面的金属层 502。 该有机树脂层 501的厚度可以根据 电子元件 400的厚度决定， 通常在 100微米到 400微米之间， 不能小于电子元件 400的厚度。金属层 502的厚度通常在 3微米到 100微米之间，根据实际场景确定。  As shown in Fig. 3a, the core layer of the circuit board may be a single-sided copper clad laminate comprising an organic resin layer 501 and a metal layer 502 covering the surface of the organic resin layer 501. The thickness of the organic resin layer 501 can be determined depending on the thickness of the electronic component 400, and is usually between 100 μm and 400 μm, and cannot be smaller than the thickness of the electronic component 400. The thickness of the metal layer 502 is typically between 3 microns and 100 microns, as determined by the actual scenario.
如图 lb所示，  As shown in Figure lb,
体可以包括： 111、在电路板的芯层开设通孔， 所述芯层的第一面形成有第一电路图形。 如图 3b所示，在芯层上开设通孔 503 , 该通孔 503的大小与电子元件的大小 相匹配。 通孔 503的个数与需要埋入的电子元件的个数相当， 可以是一个， 也 可以是多个。其中， 所述芯层第一面的金属层 502已经加工形成第一电路图形， 附图中第一电路图形仍用 502表示。 The body can include: 111. A through hole is formed in a core layer of the circuit board, and a first circuit pattern is formed on the first surface of the core layer. As shown in FIG. 3b, a through hole 503 is formed in the core layer, and the size of the through hole 503 matches the size of the electronic component. The number of the through holes 503 is equivalent to the number of electronic components to be buried, and may be one or plural. Wherein, the metal layer 502 of the first side of the core layer has been processed to form a first circuit pattern, and the first circuit pattern in the drawing is still indicated by 502.
112、 在所述芯层的第二面贴胶带。  112. Apply a tape on the second side of the core layer.
如图 3c所示， 在芯层的第二面贴胶带 504。 该胶带 504可以是紫外光 UV胶 带， 能够在照射紫外光时失去粘性便于去除； 也可以是其它胶带， 例如在经过 高温如 150摄氏度时失去粘性的胶带。  As shown in Figure 3c, a tape 504 is applied to the second side of the core layer. The tape 504 may be an ultraviolet UV tape that loses its tackiness when exposed to ultraviolet light for easy removal; it may be other tapes, such as tapes that lose their tack when exposed to high temperatures such as 150 degrees Celsius.
113、 将电子元件置于所述通孔中， 并使所述电子元件的具有铝电极的下 表面粘贴在所述胶带上。  113. Place an electronic component in the through hole, and attach a lower surface of the electronic component having an aluminum electrode to the tape.
如图 3d所示，本步骤中将电子元件 400置于通孔 503中，其中，电子元件 400 的具有铝电极 401的下表面接触并粘贴在胶带 504上，进行临时固定。铝电极 401 可以是多个独立的铝电极。  As shown in Fig. 3d, in this step, the electronic component 400 is placed in the through hole 503, wherein the lower surface of the electronic component 400 having the aluminum electrode 401 is contacted and adhered to the tape 504 for temporary fixing. The aluminum electrode 401 can be a plurality of independent aluminum electrodes.
114、 在所述电子元件侧面与所述通孔侧面的缝隙中填充绝缘介质。  114. Fill an insulating medium in a gap between a side surface of the electronic component and a side surface of the through hole.
通孔 503略大于电子元件 400 ,电子元件 400的侧面与通孔 503的侧面之间形 成缝隙。 如图 3e所示， 本步骤中， 在该缝隙中填充绝缘介质 505 , —方面利用 该绝缘介质 505将电子元件固定在芯层中，另一方面利用该绝缘介质 505将芯层 的上、 下表面以及电子元件 400的上、 下表面隔开。 本实施例中， 所述绝缘介 质 505优选采用感光树脂。 可以在通孔 503中， 包括所述的缝隙和电子元件 400 的具有非铝电极 402的上表面，全部印刷上感光树脂， 然后再利用其感光特性， 通过曝光显影工艺将非铝电极 402表面的感光树脂去除。  The through hole 503 is slightly larger than the electronic component 400, and a gap is formed between the side surface of the electronic component 400 and the side surface of the through hole 503. As shown in FIG. 3e, in this step, the gap is filled with an insulating medium 505, wherein the insulating medium 505 is used to fix the electronic component in the core layer, and on the other hand, the insulating medium 505 is used to move the core layer up and down. The surface and the upper and lower surfaces of the electronic component 400 are spaced apart. In the embodiment, the insulating medium 505 is preferably a photosensitive resin. The surface of the non-aluminum electrode 402 may be printed by the exposure and development process in the through hole 503, including the slit and the upper surface of the electronic component 400 having the non-aluminum electrode 402, all of which are printed with a photosensitive resin. The photosensitive resin is removed.
115、 在所述电子元件的具有非铝电极的上表面填充导电介质， 使所述电 子元件的非铝电极与所述第一电路图形电连接。  115. A conductive medium is filled on an upper surface of the electronic component having a non-aluminum electrode, and a non-aluminum electrode of the electronic component is electrically connected to the first circuit pattern.
如图 3f所示， 本步骤中， 为了使电子元件 400的非铝电极 402与芯层上形成 使非铝电极 402通过该导电介质 506与第一电路图形 502实现电连接。  As shown in FIG. 3f, in this step, in order to make the non-aluminum electrode 402 of the electronic component 400 and the core layer are formed, the non-aluminum electrode 402 is electrically connected to the first circuit pattern 502 through the conductive medium 506.
如图 3g所示， 在填充导电介质 506之后， 还可以包括一个研磨整平步骤， 将导电介质 506研磨至与所述第一电路图形表面平齐。 As shown in FIG. 3g, after filling the conductive medium 506, a polishing and leveling step may also be included. The conductive medium 506 is ground to be flush with the surface of the first circuit pattern.
116、 去除胶带。  116. Remove the tape.
图 3h是去除胶带 504后的示意图。 可以通过手工方法去除胶带， 也已通过 化学方法或者照紫外光等方法去除胶带。 保证去除胶带后， 铝电极 401表面没 有残胶， 未被胶带污染。  Figure 3h is a schematic illustration of the removal of the tape 504. The tape can be removed by hand, and the tape has been removed by chemical means or by ultraviolet light. After the tape is removed, the surface of the aluminum electrode 401 has no residual glue and is not contaminated by the tape.
120、 对所述铝电极进行辞化处理， 并在辞化处理后的铝电极表面镀镍。 为了防止后续工艺流程中对电子元件 400的铝电极 401造成损坏，本步骤中 先在铝电极 401的表面进行辞化处理， 如图 3i所示； 然后再进行镀镍处理， 如 图 3j所示， 从而在铝电极 401表面形成一个辞镍保护层 403。  120. The aluminum electrode is subjected to a rectification process, and nickel is plated on the surface of the aluminum electrode after the rectification process. In order to prevent damage to the aluminum electrode 401 of the electronic component 400 in the subsequent process, in this step, the surface of the aluminum electrode 401 is first subjected to a rectification process, as shown in FIG. 3i; and then nickel plating is performed, as shown in FIG. 3j. Thus, a nickel protective layer 403 is formed on the surface of the aluminum electrode 401.
其中， 所说的辞化处理包括： 将铝电极采用约 3wt%~5wt 々NaOH溶液常 温浸泡约 10~30秒，然后在 20wt%~50wt%的硝酸溶液进行常温浸泡 10-30秒，确 保铝电极表面的氧化物清除后， 将铝电极浸泡在含 500g/L的 NaOH和 100g/L ZnO的溶液中， 常温浸泡 10~30秒， 在铝电极表面形成一层含辞金属层。 其中， wt%是指重量百分比。  Wherein, the rectification treatment comprises: immersing the aluminum electrode at a normal temperature of about 3 wt% to 5 wt 々 NaOH solution for about 10 to 30 seconds, and then immersing in a 20 wt% to 50 wt% nitric acid solution at room temperature for 10-30 seconds to ensure aluminum. After the oxide on the surface of the electrode is removed, the aluminum electrode is immersed in a solution containing 500 g/L of NaOH and 100 g/L of ZnO, and immersed at room temperature for 10 to 30 seconds to form a layer of metal on the surface of the aluminum electrode. Wherein wt% means weight percentage.
所说的镀镍处理是在辞化处理后的辞化层表面化学镀镍， 包括： 将辞化处 理后的铝电极用去离子水清洗后， 立即放入化学镀镍溶液中镀镍 10~30分钟， 镀镍溶液主要是 NiS04和 NaH2P02组成，镀液温度约 70~90摄氏度， 最后在辞表 面镀上一层厚度 7微米以上的 Ni-P金属层。 化学镀镍得到的镀层的主要成分是 镍，但也不限制有其它微量元素例如磷等，其中磷的含量可以在 4wt%—10wt% 之间， 其中， \¥1%指重量百分比。 The nickel plating treatment is electroless nickel plating on the surface of the lexical layer after the rectification process, including: after the etched aluminum electrode is washed with deionized water, immediately placed in the electroless nickel plating solution for nickel plating 10~ For 30 minutes, the nickel plating solution is mainly composed of NiS0 4 and NaH 2 P0 2 , the bath temperature is about 70-90 degrees Celsius, and finally a Ni-P metal layer with a thickness of 7 microns or more is plated on the surface. The main component of the electroless nickel plating coating is nickel, but other trace elements such as phosphorus and the like are not limited, and the phosphorus content may be between 4% by weight and 10% by weight, wherein \¥1% means weight percentage.
由于镍金属层的化学稳定性较好， 在铝电极 401表面形成辞镍保护层 403 之后， 就可以按照常规的工艺流程进行后续加工了， 辞镍保护层 403保护下的 铝电极 401将不会再被激光或蚀刻等工艺中的各种化学溶液损坏。 举例来说， 后续的步骤可以包括：  Since the nickel metal layer has good chemical stability, after forming the nickel protective layer 403 on the surface of the aluminum electrode 401, subsequent processing can be performed according to a conventional process flow, and the aluminum electrode 401 under the protection of the nickel protective layer 403 will not It is then damaged by various chemical solutions in processes such as laser or etching. For example, subsequent steps can include:
131、 在所述芯层的第二面压合绝缘介质层；  131. Pressing an insulating dielectric layer on the second surface of the core layer;
如图 3k所示， 在芯层的第二面即铝电极 401所在的一面压合绝缘介质层 507。 该绝缘介质层 507可以是半固化片树脂。  As shown in Fig. 3k, the insulating dielectric layer 507 is laminated on the second side of the core layer, i.e., the side on which the aluminum electrode 401 is located. The insulating dielectric layer 507 may be a prepreg resin.
132、 在所述绝缘介质层上制作连接所述辞化和镀镍处理后的铝电极的金 属化盲孔； 132. Forming a gold on the insulating dielectric layer connecting the aluminum electrode after the rectification and nickel plating treatment Blind hole
如图 31所示， 本步骤中， 在绝缘介质层 507上对应于所述铝电极 401的位置 开设盲孔 508 , 盲孔 508的底部抵达所述铝电极 401。 可以采用激光钻孔方式加 工该盲孔 508。  As shown in FIG. 31, in this step, a blind via 508 is formed on the insulating dielectric layer 507 corresponding to the position of the aluminum electrode 401, and the bottom of the blind via 508 reaches the aluminum electrode 401. The blind hole 508 can be processed by laser drilling.
如图 3m所示， 然后对该盲孔 508进行金属化， 即， 通过化学沉铜、 电镀铜 等工艺在盲孔 508的内壁形成一层金属镀层， 使该盲孔 508成为金属化盲孔。  As shown in Fig. 3m, the blind via 508 is then metallized, i.e., a metal plating is formed on the inner wall of the blind via 508 by chemical copper plating, electroplating, or the like to make the blind via 508 a metallized blind via.
133、 在所述绝缘介质层上制作第二电路图形， 所述第二电路图形通过所 述金属化盲孔与所述电子元件的铝电极电连接。  133. Form a second circuit pattern on the insulating dielectric layer, and the second circuit pattern is electrically connected to the aluminum electrode of the electronic component through the metallized blind hole.
最后， 可以采用常规的电路板图形制作工艺在该绝缘介质层 507表面制作 第二电路图形，该第二电路图形可以通过金属化盲孔 508与电子元件 400的经过 了辞化和镀镍处理后的铝电极 401进行电连接。 其中， 制作第二电路图形时， 可以采用在表面化学镀铜、 图形电镀铜、 蚀刻等工艺完成图形制作。  Finally, a second circuit pattern can be formed on the surface of the insulating dielectric layer 507 by using a conventional circuit board patterning process. The second circuit pattern can be processed by the metallization blind via 508 and the electronic component 400 after being re-chemicalized and nickel-plated. The aluminum electrode 401 is electrically connected. Wherein, when the second circuit pattern is formed, the surface can be formed by electroless copper plating, pattern electroplating copper, etching, and the like.
至此， 内部埋入电子元件的双面电路板制作完成， 如需增加其他电路层， 可以采用常规的电路板工艺在该具有埋入电子元件的双面两面进行增层。  At this point, the double-sided circuit board in which the electronic components are buried is completed. If other circuit layers are to be added, a conventional circuit board process can be used to add layers on both sides of the double-sided embedded electronic component.
综上， 本发明实施例提供了一种电子元件埋入式电路板的制造方法， 采用 对埋入电路板的电子元件的铝电极进行辞化处理和镀镍处理的技术方案，由辞 化和镀镍处理后的得到的辞镍保护层对铝电极进行保护，使铝电极在电路板制 造流程中包括激光钻孔和蚀刻等工艺中，不会被激光和各种酸性或碱性的化学 溶液损坏。对其非铝电极部分， 可以采用导电性物质填充方式实现该部分电极 与外部电路的连接。 请参考图 3m, 本发明实施例还提供一种电子元件埋入式电路板， 包括： 开设有通孔 503的芯层和埋入所述通孔 503中的电子元件 400;  In summary, an embodiment of the present invention provides a method for manufacturing an embedded circuit board for an electronic component, which adopts a technical solution for performing a rectification process and a nickel plating process on an aluminum electrode of an electronic component embedded in a circuit board, The nickel-protected layer obtained after nickel plating protects the aluminum electrode, so that the aluminum electrode is not subjected to laser and various acidic or alkaline chemical solutions in the process of manufacturing the circuit board including laser drilling and etching. damage. For the non-aluminum electrode portion, the connection of the portion of the electrode to an external circuit can be achieved by a conductive material filling method. Referring to FIG. 3m, an embodiment of the present invention further provides an electronic component embedded circuit board, comprising: a core layer having a through hole 503 and an electronic component 400 embedded in the through hole 503;
所述电子元件 400的一面具有铝电极 401 , 所述铝电极 401表面具有辞化和 镀镍处理后得到的辞镍保护层 403。  One surface of the electronic component 400 has an aluminum electrode 401 having a nickel protective layer 403 obtained by rectifying and nickel plating.
进一步的，所述芯层的远离所述铝电极 401的第一面形成有第一电路图形， 所述第一电路图形与所述电子元件 400的非铝电极 402电连接；  Further, a first circuit pattern of the core layer away from the aluminum electrode 401 is formed, and the first circuit pattern is electrically connected to the non-aluminum electrode 402 of the electronic component 400;
所述铝电极 401所在的芯层的第二面压合有绝缘介质层 507 ,所述绝缘介质 层 507上形成有第二电路图形，所述第二电路图形通过所述绝缘介质层 507上设 置的金属化盲孔 508与所述铝电极 401电连接。 The second surface of the core layer where the aluminum electrode 401 is located is press-bonded with an insulating dielectric layer 507, and the second dielectric pattern is formed on the insulating dielectric layer 507, and the second circuit pattern is formed on the insulating dielectric layer 507. The metallized blind vias 508 are electrically connected to the aluminum electrodes 401.
再进一步的 ,所述电子元件 400侧面与所述通孔 503侧面的缝隙中填充有绝 缘介质 505。 该绝缘介质 505优选为感光树脂。  Further, a gap between the side of the electronic component 400 and the side of the through hole 503 is filled with an insulating medium 505. The insulating medium 505 is preferably a photosensitive resin.
所述通孔 503中电子元件 400的非铝电极 402的上表面填充有导电介质 506, 所述电子元件的非铝电极 402通过所述导电介质 506与第一电路图形电连接。  The upper surface of the non-aluminum electrode 402 of the electronic component 400 in the via 503 is filled with a conductive medium 506 through which the non-aluminum electrode 402 of the electronic component is electrically connected to the first circuit pattern.
本发明实施例提供的电子元件埋入式电路板，其铝电极表面具有由辞化和 镀镍处理后的得到的辞镍保护层，可以防止激光钻孔的破坏和各种酸性或碱性 的化学溶液腐蚀。  The electronic component embedded circuit board provided by the embodiment of the invention has a nickel protective layer obtained by rectifying and nickel plating on the surface of the aluminum electrode, which can prevent damage of laser drilling and various acidic or alkaline. Chemical solution corrosion.
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想，不应理解为 对本发明的限制， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围 内， 可轻易想到的变化或替换， 都应涵盖在本发明的保护范围之内。 The above description of the embodiments is only for the purpose of facilitating the understanding of the method of the present invention and the core idea thereof, and is not to be construed as limiting the present invention. Any person skilled in the art can easily think of changes within the technical scope disclosed by the present invention. Or, the replacement should be covered by the scope of the present invention.

Claims

1、 一种电子元件埋入式电路板的制造方法， 其特征在于， 包括： 将电子元件埋入电路板的芯层开设的通孔中，所述电子元件的一面具有铝 电极； A method of manufacturing an electronic component embedded circuit board, comprising: embedding an electronic component in a through hole formed in a core layer of a circuit board, wherein one side of the electronic component has an aluminum electrode;
对所述铝电极进行辞化处理， 并在辞化处理后的铝电极表面镀镍。  The aluminum electrode was subjected to a rectification treatment, and nickel was plated on the surface of the aluminum electrode after the rectification treatment.
2、根据权利要求 1所述的方法， 其特征在于， 所述将电子元件埋入电路板 芯层开设的通孔中包括：  The method according to claim 1, wherein the embedding the electronic component in the through hole formed in the core layer of the circuit board comprises:
在电路板的芯层开设通孔， 所述芯层的第一面形成有第一电路图形； 在所述芯层的第二面贴胶带；  a through hole is formed in the core layer of the circuit board, the first surface of the core layer is formed with a first circuit pattern; and the second surface of the core layer is taped;
将电子元件置于所述通孔中，并使所述电子元件的具有铝电极的下表面粘 贴在所述胶带上；  An electronic component is placed in the through hole, and a lower surface of the electronic component having an aluminum electrode is adhered to the adhesive tape;
在所述电子元件侧面与所述通孔侧面的缝隙中填充绝缘介质；  Filling an insulating medium in a gap between a side surface of the electronic component and a side surface of the through hole;
在所述电子元件的具有非铝电极的上表面填充导电介质，使所述电子元件 的非铝电极与所述第一电路图形电连接；  Depositing a conductive medium on an upper surface of the electronic component having a non-aluminum electrode to electrically connect the non-aluminum electrode of the electronic component to the first circuit pattern;
去除胶带。  Remove the tape.
3、 根据权利要求 2所述的方法， 其特征在于， 在所述电子元件侧面与所述 通孔侧面的缝隙中填充绝缘介质包括：  3. The method according to claim 2, wherein the filling the insulating medium in the side of the side of the electronic component and the side of the through hole comprises:
在埋入电子元件的所述通孔内填充感光树脂；  Filling the through hole of the embedded electronic component with a photosensitive resin;
通过曝光显影将所述电子元件的非铝电极表面的感光树脂去除。  The photosensitive resin on the surface of the non-aluminum electrode of the electronic component is removed by exposure development.
4、 根据权利要求 2所述的方法， 其特征在于， 所述在所述电子元件的具有 非铝电极的上表面填充导电介质之后还包括：  4. The method according to claim 2, wherein after the filling the conductive medium on the upper surface of the electronic component having the non-aluminum electrode, the method further comprises:
将所述导电介质研磨至与所述第一电路图形表面平齐。  The conductive medium is ground to be flush with the surface of the first circuit pattern.
5、 根据权利要求 2所述的方法， 其特征在于：  5. The method of claim 2, wherein:
所述胶带为紫外光 UV胶带。  The tape is an ultraviolet UV tape.
6、 根据权利要求 2至 5中任一项所述的方法， 其特征在于， 所述在辞化处 理后的铝电极表面镀镍之后还包括：  The method according to any one of claims 2 to 5, wherein after the surface of the aluminum electrode after the rectification treatment is plated with nickel, the method further comprises:
在所述芯层的第二面压合绝缘介质层；  Pressing an insulating dielectric layer on the second side of the core layer;
在所述绝缘介质层上制作连接所述辞化和镀镍处理后的铝电极的金属化 盲盲孔孔；； Forming a metallization of the aluminum electrode after the rectification and nickel plating treatment on the insulating dielectric layer Blind blind hole;
在在所所述述绝绝缘缘介介质质层层上上制制作作第第二二电电路路图图形形，，所所述述第第二二电电路路图图形形通通过过所所述述金金属属 化化盲盲孔孔与与所所述述电电子子元元件件的的铝铝电电极极电电连连接接。。  Forming a second second electric circuit diagram pattern on the insulating insulating dielectric layer, the second second electric circuit pattern is passed through The gold metallized blind blind hole is electrically connected to the aluminum-aluminum electric electrode of the electrical and electronic component device. .
77、、 一一种种电电子子元元件件埋埋入入式式电电路路板板，， 其其特特征征在在于于，， 包包括括：：  77. A type of electrical and electronic component device embedded in an electrical circuit board, wherein the special features are:, the package includes:
55 开开设设有有通通孔孔的的芯芯层层和和埋埋入入所所述述通通孔孔中中的的电电子子元元件件；；  55 opening a core layer provided with a through hole and an electrical and electronic element device embedded in the through hole;
所所述述电电子子元元件件的的一一面面具具有有铝铝电电极极，，所所述述铝铝电电极极表表面面具具有有辞辞化化和和镀镀镍镍处处理理后后 得得到到的的辞辞镍镍保保护护层层。。  One side of the mask of the electrical and electronic component device has an aluminum-aluminum electrode, and the surface of the aluminum-aluminum electrode has a rheostat and a nickel-nickel plating. After processing, you can get the remarks of the nickel-nickel protective layer. .
88、、 根根据据权权利利要要求求 77所所述述的的电电子子元元件件埋埋入入式式电电路路板板，， 其其特特征征在在于于：： 所所述述芯芯层层的的远远离离所所述述铝铝电电极极的的第第一一面面形形成成有有第第一一电电路路图图形形，，所所述述第第一一电电路路 88. The embedded electronic circuit board is embedded in the electrical and electronic component device according to the claim of claim 77. The special features are as follows: Forming a first first electrical circuit diagram pattern from the first core surface of the core layer that is far away from the aluminum-aluminum electrode; First electrical circuit
1100 图图形形与与所所述述电电子子元元件件的的非非铝铝电电极极电电连连接接；； 1100 is in the form of a pattern electrically connected to a non-aluminum-aluminum electric electrode of the electro-electronic sub-element member;
所所述述铝铝电电极极所所在在的的芯芯层层的的第第二二面面压压合合有有绝绝缘缘介介质质层层，，所所述述绝绝缘缘介介质质层层上上形形 成成有有第第二二电电路路图图形形，，所所述述第第二二电电路路图图形形通通过过所所述述绝绝缘缘介介质质层层上上设设置置的的金金属属化化盲盲 孔孔与与所所述述铝铝电电极极电电连连接接。。  The second surface of the core layer of the aluminum-aluminum electrode having the aluminum-aluminum electrode is pressure-bonded to have a dielectric layer, and the insulating layer is Forming a second second electrical circuit diagram pattern on the upper portion of the dielectric layer, wherein the second second electrical circuit pattern passes through the insulating dielectric material The layered gold metallized blind blind hole is disposed on the layer and electrically connected to the aluminum-aluminum electrode. .
99、、 根根据据权权利利要要求求 77或或 88所所述述的的电电子子元元件件埋埋入入式式电电路路板板，， 其其特特征征在在于于：： 1155 所所述述电电子子元元件件侧侧面面与与所所述述通通孔孔侧侧面面的的缝缝隙隙中中填填充充有有绝绝缘缘介介质质。。  99. The embedded electronic circuit board of the electric electronic component device according to claim 37 or 88, wherein the special feature is: The gap between the side surface of the side of the electro-electronic element element and the side surface of the side surface of the through-hole side of the 1155 is filled with a dielectric material. .
1100、、 根根据据权权利利要要求求 99所所述述的的电电子子元元件件埋埋入入式式电电路路板板，， 其其特特征征在在于于：： 所所述述通通孔孔中中电电子子元元件件的的非非铝铝电电极极的的上上表表面面填填充充有有导导电电介介质质，，所所述述电电子子元元件件 的的非非铝铝电电极极通通过过所所述述导导电电介介质质与与所所述述第第一一电电路路图图形形电电连连接接。。  1100. The embedded electronic circuit board is embedded in the electrical and electronic component device according to the claim of claim 99. The special features are as follows: The upper surface surface of the non-aluminum-aluminum electrode electrode of the mesoelectric electron element component in the through-hole is filled with a conductive conductive dielectric material, and the electro-electronic sub-element The non-aluminum-aluminum electrode electrode of the component member is electrically connected to the first-electrode circuit pattern by electrically connecting the conductive dielectric material. .
1111、、 根根据据权权利利要要求求 99所所述述的的电电子子元元件件埋埋入入式式电电路路板板，， 其其特特征征在在于于：：  1111. The electrical and electronic component device according to the claim of claim 99 is embedded in an electrical circuit board. The special features are as follows:
20 *  20 *
PCT/CN2011/079032 2011-08-10 2011-08-29 Electronic component embedded circuit board and manufacturing method thereof WO2013020309A1 (en)

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