WO2013001715A1 - Dispositif de pulvérisation cathodique - Google Patents

Dispositif de pulvérisation cathodique Download PDF

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Publication number
WO2013001715A1
WO2013001715A1 PCT/JP2012/003529 JP2012003529W WO2013001715A1 WO 2013001715 A1 WO2013001715 A1 WO 2013001715A1 JP 2012003529 W JP2012003529 W JP 2012003529W WO 2013001715 A1 WO2013001715 A1 WO 2013001715A1
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WO
WIPO (PCT)
Prior art keywords
unit
magnetic circuit
target
circuit unit
magnet
Prior art date
Application number
PCT/JP2012/003529
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English (en)
Japanese (ja)
Inventor
鈴木　英和
Original Assignee
キヤノンアネルバ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノンアネルバ株式会社 filed Critical キヤノンアネルバ株式会社
Priority to KR1020147002252A priority Critical patent/KR101608603B1/ko
Priority to JP2013522703A priority patent/JP5792812B2/ja
Priority to CN201280031791.3A priority patent/CN103649365B/zh
Publication of WO2013001715A1 publication Critical patent/WO2013001715A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Definitions

  • the present invention relates to a sputtering apparatus including a magnetron cathode, and more particularly to a sputtering apparatus including a magnetron cathode in which a magnetic circuit unit swings.
  • Magnetron cathodes for sputtering equipment.
  • a magnetron cathode having a magnet on the back side of a flat target is often used.
  • Magnetron cathodes can be classified from two viewpoints: shape and operation of the magnetic circuit unit.
  • shape of the magnetron cathode is determined by the shape of the target attached to the magnetron cathode, and can be roughly divided into a substantially circular shape and a substantially rectangular shape.
  • Circular magnetron cathodes are often used for round objects such as semiconductors and magnetic disks.
  • rectangular magnetron cathodes are often used for rectangular objects such as displays and solar cells. From the viewpoint of the operation of the magnetic circuit unit, the magnetic circuit unit is roughly classified into a fixed type and a swinging type. The reason why the magnetic circuit unit is swung is to improve the utilization efficiency of the target and extend its life, and to reduce dust generation from the target by eliminating the non-erosion region.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a sputtering apparatus that slows the etching speed of a portion that is easily eroded and has good target utilization efficiency.
  • the sputtering apparatus of the present invention includes a vacuum vessel, a substrate holder disposed inside the vacuum vessel and capable of holding a substrate to be film-formed, a target mounting surface capable of mounting a target facing the substrate holder, and A magnetron cathode having a magnetic circuit unit capable of swinging in a first direction parallel to the target mounting surface, the magnetic circuit unit including a first unit having a magnet pair arranged in a direction parallel to the first direction; The second unit has a magnet pair disposed in a direction intersecting the first direction, and the second unit has a longer swing distance than the first unit.
  • FIG. 1 is a schematic diagram showing a schematic configuration of a sputtering apparatus provided with a magnetron cathode 1 according to the present invention.
  • the sputtering apparatus has a chamber 2, a magnetron cathode 1, and a substrate holder 10 as main components.
  • the sputtering apparatus includes a power source 12 for applying power necessary for the sputtering film forming process to the target back plate 4.
  • a target back plate 4 to which the target 3 is bonded is attached to the chamber 2 (vacuum container) via an insulator 5.
  • the insulator 5 is a member that electrically insulates the chamber 2 and the target back plate 4.
  • the chamber 2, the target back plate 4, and the insulator 5 constitute a processing chamber 6 that can be evacuated.
  • the target back plate 4 has a target mounting surface to which the target 3 is bonded by bonding.
  • the target mounting surface is formed as a smooth surface facing the substrate holder 10.
  • the target 3 is a film forming material and is bonded to the target mounting surface of the target back plate 4 as described above.
  • a magnetic circuit unit 11 is arranged on the back side of the target back plate 4 (that is, the second surface side of the first surface of the target back plate 4 on the target 3 side and the second surface opposite to the first surface). . Further, on the back side of the target back plate 4, a rocking device for reciprocating the magnetic circuit unit 11 is provided at least in the X direction (first direction) parallel to the target mounting surface. The swing device will be described later with reference to FIG.
  • a substrate holder 10 that can hold the substrate 9 so as to face the target 3 is provided inside the chamber 2.
  • An exhaust device such as an exhaust pump is connected to the exhaust port 7 of the chamber 2 via a conductance valve (not shown).
  • a gas introduction system 8 having a flow rate controller (MFC) or the like is connected to the chamber 2 as process gas introduction means.
  • Process gas is supplied from the gas introduction system 8 at a predetermined flow rate.
  • a rare gas such as argon (Ar) or a simple substance or a mixed gas containing nitrogen (N 2) can be used.
  • the magnetic circuit unit 11 is disposed on the back side of the target back plate 4 that functions as a vacuum partition, but a partition plate is provided at a position between the target back plate 4 and the magnetic circuit unit 11.
  • the partition plate may be a vacuum partition.
  • the magnetic circuit unit 11 includes, for example, a plate A (A1, A2), a center magnet B (B1, B2), and an outer peripheral magnet C (C1, C2).
  • the magnetron cathode 1 includes, for example, a magnetic circuit unit 11, a swing device, and a target back plate 4.
  • FIG. 2A is a schematic plan view of the magnetic circuit unit 11 according to the present embodiment
  • FIG. 2B is an enlarged view of an end portion (E portion of FIG. 2A) of the magnetic circuit unit 11.
  • a central magnet B (B1, B2) composed of permanent magnets and an outer peripheral magnet C (C1, C2) are arranged apart from each other. It arrange
  • the center magnet B and the outer periphery magnet C are magnetized in a direction substantially perpendicular to the paper surface, and the magnetization directions of the center magnet B and the outer periphery magnet C are opposite to each other.
  • an endless magnetic tunnel is formed between the center magnet B and the outer peripheral magnet C.
  • the magnetic tunnel is formed on the substrate side of the target mounting surface. More specifically, a stable magnetron discharge is possible by forming a magnetic tunnel on the surface side of the target disposed on the target mounting surface.
  • the center magnet B1 and the outer peripheral magnet C1 form a magnet pair in the X direction (first direction), and the short side portion of the central magnet B2 and the outer peripheral magnet C2 Forms a magnet pair in the Y direction.
  • the outer peripheral magnet C1 is disposed on both sides in the X direction of the central magnet B1, the central magnet B1 forms a magnet pair with the outer peripheral magnet C1 on both sides in the X direction.
  • the short side portion of the outer peripheral magnet C ⁇ b> 2 is a short side portion of the rectangular outer peripheral magnet C, and in particular, is a portion of the outer peripheral magnet C ⁇ b> 2 located in the longitudinal direction of the center magnet B.
  • the shape of the center magnet B and the outer peripheral magnet C is not limited to an axial shape and a rectangular shape.
  • the shape of the end unit 112 may be a curved shape or a polygon such as a triangle.
  • the center magnet B and the outer periphery magnet C can also be comprised by combining many small magnets. In this case, the magnet pair of the center magnet B2 and the outer peripheral magnet C2 has a portion formed in a direction deviating from the Y direction.
  • the magnetic circuit unit 11 is divided into a straight line unit 111 and an end unit 112 at a position D shown in FIG.
  • the straight line unit 111 (first unit) includes a plate (outer magnet C1) that occupies most of the long side portion of the outer peripheral magnet C and a portion (center magnet B1) that occupies most of the long side portion of the central magnet B. It is arranged on A1.
  • the end unit 112 (second unit) is configured by arranging a short side portion (outer peripheral magnet C2) of the outer peripheral magnet C and a short side portion (central magnet B2) of the central magnet B on the plate A2. .
  • the short side portions are arranged on both sides in the long side direction of the linear unit 111 (that is, one end side and the other end side of the linear unit 111).
  • the swing direction of the magnetic circuit unit 11 includes the X direction in FIG.
  • the X direction is a direction orthogonal to the long side portion of the rectangular outer peripheral magnet C.
  • the magnetron cathode 1 is configured such that the swing distance of the linear unit 111 and the swing distance of the end unit 112 of the magnetic circuit unit 11 can be set independently.
  • FIGS. 3 to 5 are plan views illustrating the swinging state of the swinging device and the magnetic circuit unit, and are schematic views of the magnetron cathode 1 as viewed from above the sputtering device.
  • the configuration and operation of the swing device will be described with reference to FIGS.
  • the target 3 is indicated by a broken line in FIGS.
  • FIG. 3 shows the case where the magnetic circuit unit 11 is in the center of the movable range in the X direction.
  • Nuts 113a and 113b are respectively attached to the linear unit 111 and the end units 112 arranged on both sides thereof, and the linear unit 111 and the end unit 112 are respectively connected to the screw shaft 114a via the nuts 113a and 113b. , 114b.
  • the screw shafts 114a and 114b are connected to motors 115a and 115b, respectively.
  • the screw shafts 114a and 114b are rotated (forward / reverse) by the motors 115a and 115b. That is, the nuts 113a and 113b and the screw shafts 114a and 114b constitute a ball screw mechanism.
  • the straight line unit 111 and the end unit 112 swing in the X direction as the screw shafts 114a and 114b rotate. Further, since the linear unit 111 and the end unit 112 are driven by different motors 115a and 115b, the linear unit 111 and the end unit 112 are operated by causing the motors 115a and 115b to perform different rotational operations. Can be swung at different rocking distances.
  • the linear unit 111 and the end unit 112 of the magnetic circuit unit 11 are at the left end and the right end of the movable range in the X direction, respectively.
  • the linear unit 111 and the end unit 112 can be oscillated at different oscillating distances. Therefore, the oscillating distance of the end unit 112 is set to the oscillating distance of the linear unit 111. It can be longer than that. Further, according to the above-described configuration, the swing distance between the linear unit 111 and the end unit 112 can be simply performed by changing the motor control.
  • a mechanism using a ball screw is employed as the swinging device in the X direction.
  • the effect of the present invention does not depend on the specific configuration of the rocking device, other structures can be employed as the rocking device.
  • the oscillating device there is only one oscillating power, and an apparatus for changing the gear ratio via a gear in a power transmission path from the motive power to the linear unit 111 and the end unit 112. Can be considered.
  • the oscillating power is one, and a crank provided on each of the linear unit 111 and the end unit 112 is provided. A device that makes the crank disk different is conceivable.
  • a configuration using a rack and pinion or an eccentric cam can be considered.
  • FIGS. 6 to 8 are respectively planes illustrating the position and shape of the plasma ring 14 when the magnetic circuit unit 11 is at the center, the left swing end, and the right swing end of the magnetron cathode 1 in the X direction.
  • FIG. 10 and 11 the moving distance of the plasma ring in the portion corresponding to the ends arranged on both sides of the straight portion of the magnetron cathode 1 is the moving distance of the plasma ring in the portion corresponding to the straight portion. Longer than that. This is because the moving distance (moving range) of the end unit 112 is larger than the moving distance (moving range) of the linear unit 111.
  • a large moving distance means that the moving speed is fast, which contributes to the flattening (uniformization) of the distribution of the etching speed in the moving range.
  • the movement of the magnetic circuit unit 11 it becomes possible to slow down the etching speed of the target at the end in the long side direction of the magnetron cathode 1, or to flatten (uniformize) the distribution of the etching speed.
  • the use efficiency of the target can be improved and the life can be extended.
  • the magnetic circuit unit 11 is composed of a plurality of units, and the distribution range of the plurality of units is individually determined to flatten (uniformize) the distribution of the etching speed of the target. , The utilization efficiency of the target can be improved.
  • FIGS. 9 to 11 are cross-sectional views illustrating the swing state of the magnetic circuit unit attached to the magnetron cathode 31 according to the second embodiment.
  • the configuration and operation of the magnetron cathode 31 will be described with reference to FIGS.
  • FIG. 9 shows a case where the magnetic circuit unit 11 (111, 112) is at the center of the movement range in the Y direction.
  • members, arrangements, and the like are assigned the same reference numerals as in the first embodiment, and detailed descriptions thereof are omitted.
  • the magnetron cathode 31 of the present embodiment has an oscillating device (second oscillating device) in the Y direction (see FIG. 9) parallel to the target mounting surface, in addition to the X oscillating device (first oscillating device) described above.
  • the Y-direction oscillating device is configured to oscillate the entire X-direction oscillating device that supports the magnetic circuit unit 11 in the Y direction, and includes a support plate 117 that supports the X-direction oscillating device, and a support plate.
  • a ball screw mechanism that swings 117 in the Y direction is provided as a main component.
  • the Y direction is orthogonal to the X direction, but is not limited to a configuration in which the Y direction and the X direction are orthogonal.
  • the support plate 117 is a member that supports the X-direction swing device, and the magnetic circuit unit 11 (111, 112) is attached to the X-direction swing device.
  • the ball screw mechanism has a nut 118 and a screw shaft 119 as main components.
  • the nut 118 is attached to the support plate 117, and the screw shaft 119 and the motor 120 connected to the screw shaft 119 are attached to the chamber 2 side.
  • the screw shaft 119 rotates (forward / reverse) by the power of the motor 120.
  • the support plate 117 connected to the screw shaft 119 via the nut 118 swings in the Y direction as the screw shaft 119 rotates.
  • the film forming apparatus using the magnetron cathode 31 of the present embodiment it is possible to slow the etching speed of the end portion in the long side direction of the magnetron cathode 31, improving the use efficiency of the target and extending the life. be able to.
  • the entire magnetic circuit unit 11 also swings in the Y direction, so that the etching speed at the end portion in the long side direction of the cathode is slower than the magnetron cathode 1 of the first embodiment. be able to.
  • the magnetron cathode 31 of the present embodiment described above is configured such that the entire magnetic circuit unit 11 swings the same distance in the Y direction, and the swinging distances of the linear unit 111 and the end unit 112 differ from each other in the X direction.
  • the entire magnetic circuit unit 11 may be swung in the X direction at the same swing distance, and the swing distances of the linear unit 111 and the end unit 112 may be different from each other in the Y direction.
  • the two end units 112 are arranged separately from the linear unit 111 in the Y direction, and the end unit 112 is larger than the linear unit 111 at the swing end in the Y direction. It can be considered to be a moving configuration.
  • an X-direction swinging device is connected to the support plate.
  • FIGS. 12, 13 and 14 are plan views showing the shape of the erosion 15 of the target when the magnetic circuit unit 11 is at the center of the operating range in the X direction, the left swing end, and the right swing end, respectively.
  • the erosion shape was simulated from the position of the plasma ring 14. At this time, the erosion was assumed to follow a Gaussian distribution in the cross-sectional direction across the ring of the plasma ring 14.
  • the erosion 15 corresponding to the shape of the plasma ring 14 of FIGS. 6-8 is drawn. That is, when the magnetic circuit unit 11 is positioned at the left and right swing ends, the shape of the erosion 15 is obtained under the condition that the end unit 112 is positioned outside the linear unit 111 in the X direction.
  • FIG. 15 shows the result of simulating the shape of the erosion 16 formed on the target 4 by performing sputtering while swinging the magnetic circuit unit 11.
  • the rocking distance in the X direction of the magnetic circuit unit 11 is ⁇ 55 mm for the linear unit 111 and ⁇ 70 mm for the end unit 112.
  • the swing distance of the magnetic circuit unit 11 in the Y direction is ⁇ 25 mm.
  • the dimensions of the cathode are 300 mm300 ⁇ 920 mm.
  • the utilization efficiency of the target 4 was 50.0%.
  • reference numerals 16 a, 16 b, and 16 c are attached according to the depth of the erosion 16.
  • Reference numeral 16c indicates the deepest erosion place.
  • the target utilization rate is a ratio of the amount of the target 3 as a whole when the portion with the deepest erosion reaches the target back plate 4.
  • FIG. 16 17, and 18 are plan views showing the shape of the erosion 18 when the integral magnetic circuit unit is at the center of the X-direction movement range of the magnetron cathode, the left swing end, and the right swing end, respectively. Show.
  • the erosion shape was simulated from the position of the plasma ring 15. At this time, the erosion 18 was assumed to follow a Gaussian distribution in the cross-sectional direction across the ring of the plasma ring 15.
  • FIG. 19 shows the result of simulating the shape of the erosion 19 formed on the target 4 by performing sputtering while swinging the integrated magnetic circuit unit.
  • the rocking distance in the X direction of the integral magnetic circuit unit was ⁇ 55 mm
  • the rocking distance in the Y direction was ⁇ 25 mm.
  • the dimensions of the cathode are 300 mm300 ⁇ 920 mm.
  • reference numerals 19 a, 19 b and 19 c are attached according to the difference in depth of the erosion 19.
  • Reference numeral 19c indicates a place where the erosion is deepest.
  • the usage efficiency of target 4 in this simulation was calculated to be 39.9%. Note that the utilization efficiency of the target 4 in the actually measured erosion was 39.3%.
  • the measurement of the utilization efficiency of the target 4 was performed by determining the volume of the measured erosion. Erosion was measured using a three-dimensional measuring instrument equipped with a laser displacement sensor. When comparing the simulation result of FIG. 19 with the simulation result of the embodiment shown in FIG. 15, the embodiment has a smaller difference in erosion depth between the vicinity of the end portion and the straight portion than the comparative example, and the use efficiency of the target is high. I understand that.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de pulvérisation cathodique qui réduit la vitesse de gravure dans des parties facilement érodées et qui présente une bonne efficacité d'utilisation d'une cible. Une unité de circuit magnétique rectangulaire (11) montée sur une cathode magnétron (31) est configurée de sorte que la distance d'oscillation est différente entre une unité linéaire (111) composée d'un aimant rectangulaire sur la partie côté long et une unité partie terminale (112) ayant un élément sur la partie côté court. La distance d'oscillation de la partie terminale (112) est supérieure à celle de l'unité linéaire (111) dans la direction X parallèle à la surface de montage de cible.
PCT/JP2012/003529 2011-06-30 2012-05-30 Dispositif de pulvérisation cathodique WO2013001715A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020147002252A KR101608603B1 (ko) 2011-06-30 2012-05-30 스퍼터 장치
JP2013522703A JP5792812B2 (ja) 2011-06-30 2012-05-30 スパッタ装置
CN201280031791.3A CN103649365B (zh) 2011-06-30 2012-05-30 溅射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-145708 2011-06-30
JP2011145708 2011-06-30

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WO2013001715A1 true WO2013001715A1 (fr) 2013-01-03

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JP (1) JP5792812B2 (fr)
KR (1) KR101608603B1 (fr)
CN (1) CN103649365B (fr)
WO (1) WO2013001715A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN104018129A (zh) * 2013-12-16 2014-09-03 湘潭宏大真空技术股份有限公司 一种真空镀膜生产线用阴极装置
CN104120392A (zh) * 2013-04-23 2014-10-29 亚威科股份有限公司 磁体单元和包含所述磁体单元的溅射设备

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JPH1025572A (ja) * 1996-07-11 1998-01-27 Hitachi Ltd マグネトロンスパッタ装置
JPH11350129A (ja) * 1998-06-10 1999-12-21 Hitachi Ltd マグネトロンスパッタ装置
JP2000212739A (ja) * 1999-01-27 2000-08-02 Sharp Corp マグネトロンスパッタ装置
JP2001164362A (ja) * 1999-12-06 2001-06-19 Ulvac Japan Ltd プレーナーマグネトロンスパッタリング装置

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JP2617439B2 (ja) * 1991-10-18 1997-06-04 アネルバ株式会社 スパッタリング装置
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
JP3798039B2 (ja) * 1994-11-12 2006-07-19 キヤノンアネルバ株式会社 スパッタ装置のマグネトロンカソード電極
CN101250687A (zh) * 2008-03-26 2008-08-27 合肥工业大学 一种矩形平面磁控溅射阴极
JP5386329B2 (ja) * 2009-12-09 2014-01-15 株式会社アルバック マグネトロンスパッタ電極用の磁石ユニット及びスパッタリング装置

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Publication number Priority date Publication date Assignee Title
JPH1025572A (ja) * 1996-07-11 1998-01-27 Hitachi Ltd マグネトロンスパッタ装置
JPH11350129A (ja) * 1998-06-10 1999-12-21 Hitachi Ltd マグネトロンスパッタ装置
JP2000212739A (ja) * 1999-01-27 2000-08-02 Sharp Corp マグネトロンスパッタ装置
JP2001164362A (ja) * 1999-12-06 2001-06-19 Ulvac Japan Ltd プレーナーマグネトロンスパッタリング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104120392A (zh) * 2013-04-23 2014-10-29 亚威科股份有限公司 磁体单元和包含所述磁体单元的溅射设备
CN104018129A (zh) * 2013-12-16 2014-09-03 湘潭宏大真空技术股份有限公司 一种真空镀膜生产线用阴极装置

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JPWO2013001715A1 (ja) 2015-02-23
CN103649365A (zh) 2014-03-19
KR101608603B1 (ko) 2016-04-01
JP5792812B2 (ja) 2015-10-14
CN103649365B (zh) 2016-10-05
KR20140027524A (ko) 2014-03-06

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