WO2012174780A1 - 薄膜晶体管面板及其制造方法 - Google Patents

薄膜晶体管面板及其制造方法 Download PDF

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Publication number
WO2012174780A1
WO2012174780A1 PCT/CN2011/078312 CN2011078312W WO2012174780A1 WO 2012174780 A1 WO2012174780 A1 WO 2012174780A1 CN 2011078312 W CN2011078312 W CN 2011078312W WO 2012174780 A1 WO2012174780 A1 WO 2012174780A1
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WIPO (PCT)
Prior art keywords
transparent conductive
conductive material
protrusion
insulating layer
thin film
Prior art date
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Ceased
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PCT/CN2011/078312
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English (en)
French (fr)
Inventor
邱钟毅
贺成明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/376,593 priority Critical patent/US20120319277A1/en
Publication of WO2012174780A1 publication Critical patent/WO2012174780A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells

Definitions

  • the present invention relates to a liquid crystal display device, and more particularly to a thin film transistor panel including a substrate, an insulating layer, and a transparent conductive material;
  • the present invention also relates to a method of fabricating a liquid crystal display device, and more particularly to a method of fabricating a thin film transistor panel comprising a substrate, an insulating layer, and a transparent conductive material, the method comprising the step of configuring a thin film transistor.
  • the present invention constructs a thin film transistor panel including a substrate, an insulating layer, and a transparent conductive material, wherein the insulating layer is provided with a protrusion on one side of the substrate facing away from the substrate, and two adjacent protrusions are disposed.
  • the pitch is in the range of 1-10 micrometers; the transparent conductive material is disposed on the top surface and the side surface of the protrusion of the insulating layer, or on the plane around the top surface and the bottom surface, or the top surface and the side surface And the plane surrounding the bottom, the insulating layer and the protrusion are the same material and layer; if the transparent conductive is disposed on a plane around the top surface and the bottom of the protrusion of the insulating layer, or The transparent conductive material on two adjacent protrusions is connected in a plane around the top surface, the side surface and the bottom; the transparent conductive material disposed on the protrusion is strip-shaped or sheet-shaped
  • the height of the protrusion ranges from 10 to 100 nanometers; the sectional shape of the protrusion is a regular shape or an irregular shape.
  • the thickness of any two regions on the transparent conductive material differs from each other by no more than 10%.
  • the cross-sectional shape of the protrusion is one of a right-angled trapezoid, an isosceles trapezoid, a rectangle, a triangle, a parallelogram, and a semicircle.
  • Another object of the present invention is to provide a thin film transistor panel to solve the technical problem that the electric field of the liquid crystal receiving in a partial region of the thin film transistor panel is insufficient, resulting in low transmittance and limited display effect.
  • the present invention constructs a thin film transistor panel including a substrate, an insulating layer, and a transparent conductive material, wherein the insulating layer is provided with a protrusion on one side of the substrate facing away from the substrate, and two adjacent protrusions are disposed.
  • the pitch is in the range of 1-10 ⁇ m (micrometers);
  • the transparent conductive material is disposed on the top surface and the side surface of the protrusion of the insulating layer, or on a plane around the top surface and the bottom surface, or a top surface
  • the insulating layer and the protrusion are the same material and layer on the plane around the side and the bottom.
  • the transparent electrode is disposed on a plane around a top surface and a bottom portion of the protrusion of the insulating layer, or a plane around a top surface, a side surface, and a bottom portion, two phases The transparent conductive material on the adjacent protrusions is connected.
  • the transparent conductive material disposed on the protrusion is strip-shaped or sheet-shaped.
  • the height of the protrusion ranges from 10 to 100 nm.
  • the cross-sectional shape of the protrusion is a regular shape or an irregular shape.
  • Another object of the present invention is to provide a method for fabricating a thin film transistor panel, which solves the technical problem that the electric field of liquid crystal reception in a partial region of the thin film transistor panel is insufficient, resulting in low transmittance and limited display effect.
  • the present invention constructs a method of fabricating a thin film transistor panel comprising a substrate, an insulating layer, and a transparent conductive material, the method comprising the steps of configuring a thin film transistor, the method further comprising the steps of: (A) Providing the insulating layer on a side of the substrate facing away from the light source; (B) etching one side of the insulating layer facing away from the substrate to form a protrusion, and spacing of two adjacent protrusions The value ranges from 1 to 10 ⁇ m; (C) removing the residue generated by etching on the insulating layer; and (D) disposing the transparent conductive material on the side of the insulating layer that is etched.
  • the step (D) specifically includes the steps of: (d1) providing the transparent conductive material having a fixed thickness on a surface of the surface on which the insulating layer is etched; or D2) depositing the transparent conductive material having a thickness not fixed on a surface of the etched side of the insulating layer, the thickness of the transparent conductive material between two adjacent protrusions being greater than the protrusion a thickness of the transparent conductive material on the top surface; or (d3) depositing the transparent conductive material having a thickness not fixed on a surface of the surface on which the insulating layer is etched, in the adjacent two of the protrusions
  • the thickness of the transparent conductive material is less than the thickness of the transparent conductive material on the top surface of the protrusion.
  • the step (d1) further includes the following steps: (d11) removing the residue on the transparent conductive material.
  • the step (d2) further includes the step of: (d21) etching on a surface of the transparent conductive material between two adjacent protrusions to etch The thickness of the transparent conductive material is fixed; (d22) after etching, the residue on the transparent conductive material is removed. .
  • the step (d3) further includes the step of: (d31) etching on a surface of the transparent conductive material on the top surface of the protrusion to make the transparent conductive material after etching The thickness is fixed; (d32) after etching, the residue on the transparent conductive material is removed.
  • the present invention eliminates the blind zone in which the liquid crystal is not tilted between the two transparent conductive electrodes in the prior art, and the transmittance in the display region is uniform, which enhances the display effect.
  • FIG. 1 is a top plan view of a thin film transistor and a pixel region of a thin film transistor panel in the prior art
  • Figure 2 is a partial view of the A-A' section of Figure 1;
  • FIG. 3 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 2;
  • FIG. 4 is a top plan view of a first preferred embodiment of a thin film transistor panel of the present invention.
  • Figure 5 is a partial view of the section B-B' in Figure 4.
  • FIG. 6 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 5;
  • Figure 7 is a schematic view showing a second preferred embodiment of the thin film transistor panel of the present invention.
  • FIG. 8 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 7;
  • Figure 9 is a plan view showing a third preferred embodiment of the thin film transistor panel of the present invention.
  • Figure 10 is a partial view of the C-C' section of Figure 9;
  • FIG. 11 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 10;
  • Figure 12 is a schematic view showing a fourth preferred embodiment of the thin film transistor panel of the present invention.
  • FIG. 13 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 12;
  • Figure 14 is a schematic view showing a fifth preferred embodiment of the thin film transistor panel of the present invention.
  • FIG. 15 is a schematic view showing the transmittance of the thin film transistor panel of FIG. 14;
  • Figure 16 is a flow chart showing a preferred embodiment of a method of fabricating a thin film transistor panel of the present invention.
  • FIG. 4 is a plan view of a first preferred embodiment of the thin film transistor panel of the present invention
  • FIG. 5 is a partial view of a cross section taken along line B-B' of FIG.
  • the transparent conductive material (the first transparent conductive material 12 and the second transparent conductive material 15) is strip-shaped.
  • the insulating layer 5 is disposed on the substrate 6, and a surface of the insulating layer 5 facing away from the substrate 6 is provided with a protrusion 7 having a top surface 8, a first side surface 9, and a second side surface 10.
  • the cross section of the protrusion 7 is rectangular, and the insulating layer 5 and the protrusion 7 are of the same material and layer.
  • a first transparent conductive material 12 is disposed on the top surface 8 of the protrusion 7, and a plane 11 on which the root of the protrusion 7 is located is provided with a second transparent conductive material 15.
  • the color filter 2 is disposed above the common electrode 1, and the liquid crystal layer 3 is interposed between the common electrode 1 and the transparent material (the first transparent conductive material 12 and the second transparent conductive material 15).
  • the second transparent conductive material 15 is in contact with the first side 9 of the protrusion 7 and the second side 10 of the adjacent protrusion 7. The thickness of the first transparent conductive material 12 and the thickness of the second transparent conductive material 15 are fixed.
  • the thickness is fixedly defined as arbitrarily selecting two regions on the first transparent conductive material 12 and the second transparent conductive material 15, which are two
  • the thickness of the area differs by no more than 10%.
  • the height H of the protrusions 7 can all be taken in the range of 10-100 nm (nanometer).
  • the spacing between two adjacent protrusions 7 is D, and the value of D ranges from 1-10 ⁇ m (micrometers).
  • the protrusions 7 are provided on the insulating layer 5, and a transparent conductive material is provided on the top surface 8 of the protrusions 7 and the plane 11 on which the roots of the protrusions 7 are located (the first transparent conductive material 12 and the second transparent The conductive material 15), thus eliminating the dead zone in which the liquid crystal is not tilted in the prior art, and improving the transmittance.
  • the transmittances corresponding to the regions of the conductive material 15 are not much different, and at the same time, since the two transparent conductive materials have a certain drop in the vertical direction, that is, the emission points of the electric field are staggered, the effect of the electric field on the liquid crystal is increased, and the transmittance is improved. .
  • FIG. 7 is a schematic view showing a second preferred embodiment of the thin film transistor panel of the present invention.
  • the transparent conductive material (the entirety of the first transparent conductive material 12, the third transparent conductive material 13 and the second transparent conductive material 15) is strip-shaped, and the top view of the thin film transistor panel of the present embodiment is similar to that of FIG.
  • the insulating layer 5 is disposed on the substrate 6, and the protrusion 7 is disposed on a side of the insulating layer 5 facing away from the substrate 6.
  • the protrusion 7 has a top surface 8, a first side surface 9, and a second side surface 10, and the insulating layer 5 and the protrusions 7 For the same material and layer.
  • the cross section of the protrusion 7 is a right-angled trapezoid.
  • the top surface 8 and the second side surface 10 of the protrusion 7 are respectively provided with a first transparent conductive material 12 and a third transparent conductive material 13, and the third transparent conductive material 13 extends to the plane 11 where the root of the protrusion 7 is located, and the second The transparent conductive material 15 is connected, preferably, the first transparent conductive material 12 is connected to the third transparent conductive material 13.
  • the color filter 2 is disposed on the common electrode 1, and the liquid crystal layer 3 is placed on the common electrode 1 and the transparent material (the whole of the first transparent conductive material 12, the third transparent conductive material 13 and the second transparent conductive material 15). between.
  • the thicknesses of the first transparent conductive material 12 and the third transparent conductive material 13 are fixed, and here, the thickness is fixedly defined as arbitrarily selected two on the first transparent conductive material 12, the third transparent conductive material 13, and the second transparent conductive material 15. Area, the thickness of these two areas differs by no more than 10%.
  • the height H of the protrusions 7 ranges from 10 to 100 nm.
  • the distance between two adjacent protrusions 7 is D, and D ranges from 1-10 ⁇ m.
  • the transmittance of the third transparent conductive material 13 corresponds to the transmittance of the first transparent conductive material 12, which eliminates the two adjacent transparent conductive materials in the prior art. The dead zone where the liquid crystal does not tilt.
  • FIG. 9 is a plan view of a third preferred embodiment of the thin film transistor panel of the present invention
  • FIG. 10 is a partial view of the C-C' cross section of FIG.
  • the transparent conductive material (the entirety of the first transparent conductive material 12, the second transparent conductive material 15, the third transparent conductive material 13, and the fourth transparent conductive material 14) is sheet-shaped.
  • the insulating layer 5 is disposed on the substrate 6, and the surface of the insulating layer 5 facing away from the substrate 6 is provided with a protrusion 7 having a top surface 8, a first side surface 9, and a second side surface 10.
  • the cross-sectional shape of the protrusion 7 is The isosceles trapezoid, the insulating layer 5 and the protrusions 7 are of the same material and layer.
  • the first transparent conductive material 12 is disposed on the top surface 8 of the protrusion 7, and the third transparent conductive material 13 and the fourth transparent conductive material 14 are disposed on the first side surface 9 and the second side surface 10, respectively, and the second transparent conductive material 15 It is placed on the plane 11 where the root of the protrusion 7 is located.
  • the color filter 2 is disposed on the common electrode 1, and the liquid crystal layer 3 is placed on the common electrode 1 and the transparent material (the first transparent conductive material 12, the second transparent conductive material 15, the third transparent conductive material 13, and the fourth transparent conductive Material 14 consists of the whole).
  • the thicknesses of the first transparent conductive material 12, the second transparent conductive material 15, the third transparent conductive material 13, and the fourth transparent conductive material 14 are fixed.
  • the thickness is fixedly defined as the first transparent conductive material 12 and the second transparent conductive material.
  • Two regions are arbitrarily selected on the material 15, the third transparent conductive material 13 and the fourth transparent conductive material 14, and the thicknesses of the two regions are different from each other by no more than 10%.
  • the height of the protrusion 7 is H, and the value of H ranges from 10 to 100 nm.
  • the distance between two adjacent protrusions 7 is D, and D ranges from 1-10 ⁇ m. Referring to Fig. 11, the transmittance curve is very flat, eliminating the troughs regarding the transmittance which occur in the prior art, and enhancing the display effect.
  • FIG. 12 is a schematic view showing a fourth preferred embodiment of the thin film transistor panel of the present invention.
  • the transparent conductive material (the whole of the first transparent conductive material, the second transparent conductive material 15, the third transparent conductive material 13 and the fourth transparent conductive material 14) is in the form of a sheet, and the top view and the diagram of the thin film transistor panel of the embodiment 9 is similar.
  • the insulating layer 5 is disposed on the substrate 6.
  • the surface of the insulating layer 5 facing away from the substrate 6 is provided with a protrusion 7 having a top surface 8, a first side surface 9, and a second side surface 10.
  • the cross-sectional shape of the protrusion 7 is The rectangular shape, the insulating layer 5 and the protrusions 7 are the same material and layer.
  • the first transparent conductive material 12 is disposed on the top surface 8 of the protrusion 7, and the third transparent conductive material 13 and the fourth transparent conductive material 14 are disposed on the first side surface 13 and the second side surface 14, respectively, and the second transparent conductive material 15 It is placed on the plane 11 where the root of the protrusion 7 is located.
  • the transparent conductive material on the two adjacent protrusions 7 is connected.
  • the color filter 2 is disposed on the common electrode 1, and the liquid crystal layer 3 is placed on the common electrode 1 and the transparent material (the first transparent conductive material 12, the second transparent conductive material 15, the third transparent conductive material 13, and the fourth transparent conductive Material 14 consists of the whole).
  • the thicknesses of the first transparent conductive material 12, the second transparent conductive material 15, the third transparent conductive material 13, and the fourth transparent conductive material 14 are fixed.
  • the thickness is fixedly defined as the first transparent conductive material 12 and the second transparent conductive material.
  • Two regions are arbitrarily selected on the material 15, the third transparent conductive material 13 and the fourth transparent conductive material 14, and the thicknesses of the two regions are different from each other by no more than 10%.
  • the height of the protrusion 7 is H, and the value of H ranges from 10 to 100 nm.
  • the distance between two adjacent protrusions 7 is D, and D ranges from 1-10 ⁇ m.
  • the transmittance curve is very flat, eliminating the troughs about the transmittance which occur in the prior art, and enhancing the display effect.
  • FIG. 14 is a schematic view showing a fifth preferred embodiment of the thin film transistor panel of the present invention.
  • the transparent conductive material (the entirety of the first transparent conductive material 12, the third transparent conductive material 13, and the fourth transparent conductive material 14) is sheet-like, and the top view of the thin film transistor panel of the present embodiment is similar to that of FIG.
  • the insulating layer 5 is disposed on the substrate 6, and the protrusion 7 is provided on one side of the insulating layer 5 facing away from the substrate 6.
  • the protrusion 7 has a top surface 8, a first side surface 9, and a second side surface 10.
  • the protrusions 7 have an irregular shape.
  • the first side 9 and the second side 10 of the protrusion 7 are both curved surfaces.
  • the first side 9 and the second side 10 of the protrusion 7 are each a quarter arc surface.
  • the insulating layer 5 and the protrusions 7 are of the same material and layer.
  • the first transparent conductive material 12 is disposed on the top surface 8 of the protrusion 7, and the third transparent conductive material 13 and the fourth transparent conductive material 14 are disposed on the first side surface 13 and the second side surface 14, respectively, adjacent to the two protrusions
  • the transparent conductive material on the opposite side of the 7 is connected.
  • the color filter 2 is disposed on the common electrode 1, and the liquid crystal layer 3 is placed on the common electrode 1 and the transparent material (the whole of the first transparent conductive material 12, the third transparent conductive material 13, and the fourth transparent conductive material 14). between.
  • the thicknesses of the first transparent conductive material 12, the third transparent conductive material 13, and the fourth transparent conductive material 14 are fixed.
  • the thickness is fixedly defined as arbitrarily selecting two regions on the transparent material, and the thicknesses of the two regions are mutually The difference is no more than 10%.
  • the height of the protrusion 7 is H, and the value of H ranges from 10 to 100 nm.
  • the distance between two adjacent protrusions 7 is D, and D ranges from 1-10 ⁇ m.
  • the transmittance curve is very flat, eliminating the troughs about the transmittance which occur in the prior art, and enhancing the display effect.
  • the cross-sectional shape of the protrusions 7 may be a regular shape such as a triangle, a parallelogram, a semicircle or the like in addition to the above-described shape, or may be other irregular shapes.
  • FIG. 16 is a flow chart of a preferred embodiment of a method of fabricating a thin film transistor panel of the present invention.
  • an insulating layer 5 is disposed on a side of the substrate 6 facing away from the light source.
  • one side of the insulating layer 5 facing away from the substrate 6 is etched to form a protrusion 7, and the pitch of two adjacent protrusions 7 ranges from 1-10 [mu]m.
  • the residue generated after etching on the insulating layer 5 is removed.
  • a transparent conductive material is disposed on the etched side of the insulating layer 5.
  • a transparent conductive material having a fixed thickness may be disposed on the etched side of the insulating layer by magnetron sputtering or deposition.
  • the fixed thickness refers to two regions of arbitrarily selected transparent conductive material, the thickness of the two regions differs by no more than 10%; in addition, deposition may be used to deposit a transparent thickness on the etched side of the insulating layer.
  • Conductive material, where the thickness is not fixed, refers to a transparent conductive material between two adjacent protrusions (including the first side 9, the second side 10 of the protrusion 7, and the plane 11 where the root of the protrusion 7 is located).
  • the thickness differs from the thickness of the transparent conductive material on the top surface 8 of the protrusion 7 by more than 10%, in particular, if the former is larger than the latter, etching is performed on the surface of the transparent conductive material between the adjacent two protrusions 7.
  • the thickness of the transparent conductive material after etching is fixed.
  • the thickness is fixed to mean two regions of the transparent conductive material, and the thickness of the two regions is No more than 10%, after etching, the residue on the transparent conductive material is removed.
  • the former is smaller than the latter, etching is performed on the surface of the transparent conductive material on the top surface 8 of the protrusion 7, so that the thickness of the transparent conductive material after etching is fixed.
  • the fixed thickness means two regions of a transparent conductive material arbitrarily selected, and the thickness of the two regions differs by no more than 10%, and after etching, the residue on the transparent conductive material is removed.

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Abstract

一种薄膜晶体管面板及其制造方法。所述薄膜晶体管面板包括基板（6），绝缘层（5），透明导电材料（12，15），所述绝缘层（5）背向所述基板（6）的一面上设有突出物（7），相邻两个所述突出物（7）的间距的取值范围为1-10μm；所述透明导电材料（12，15）设置在所述绝缘层（5）的所述突出物（7）的顶面（8）和侧面（9，10）上，或者顶面（8）和底部周围的平面（11）上，或者顶面（8）、侧面（9，10）和底部周围的平面（11）上。

Description

薄膜晶体管面板及其制造方法 技术领域
本发明涉及一种液晶显示器件，特别是涉及一种薄膜晶体管面板，包括基板，绝缘层，透明导电材料；
本发明还涉及一种液晶显示器件的制造方法，特别是涉及一种薄膜晶体管面板的制造方法，包括基板，绝缘层，透明导电材料，该方法包括配置薄膜晶体管的步骤。
 背景技术
现有薄膜晶体管面板中，两相邻的条状透明导电电极4之间具有间隙，如图1所示，这造成了部分区域的液晶接收到的电场不足，液晶不倾斜，如图2所示，从而在这些间隙区域的穿透率非常低，如图3所示，影响了液晶面板的显示效果。制造这种薄膜晶体管面板需要高解析度曝光能力的机台，对制程有极大的困难。
故，有必要提供一种薄膜晶体管面板及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种薄膜晶体管面板，以解决薄膜晶体管面板中部分区域的液晶接收的电场不足从而导致穿透率低，显示效果受限的技术问题。
 技术解决方案
为解决上述问题，本发明构造了一种薄膜晶体管面板，包括基板，绝缘层，透明导电材料，所述绝缘层背向所述基板的一面上设有突出物，相邻两个所述突出物的间距的取值范围为1-10微米；所述透明导电材料设置在所述绝缘层的所述突出物的顶面和侧面上，或者顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，所述绝缘层与所述突出物为同一材料及层别；若所述透明导电设置在所述绝缘层的所述突出物的顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，两个相邻的所述突出物上的所述透明导电材料相连；设置在所述突出物上的所述透明导电材料是条状的或者是片状的；所述突出物的高度的取值范围为10-100纳米；所述突出物的截面形状是规则的形状或者不规则的形状。
在本发明的薄膜晶体管面板中，所述透明导电材料上的任意两个区域的厚度相互之间相差不超过10%。
在本发明的薄膜晶体管面板中，所述突出物的截面形状是直角梯形、等腰梯形、矩形、三角形、平行四边形、半圆形中的一种。
本发明的另一个目的在于提供一种薄膜晶体管面板，以解决薄膜晶体管面板中部分区域的液晶接收的电场不足从而导致穿透率低，显示效果受限的技术问题。
为解决上述问题，本发明构造了一种薄膜晶体管面板，包括基板，绝缘层，透明导电材料，所述绝缘层背向所述基板的一面上设有突出物，相邻两个所述突出物的间距的取值范围为1-10μm(微米)；所述透明导电材料设置在所述绝缘层的所述突出物的顶面和侧面上，或者顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，所述绝缘层与所述突出物为同一材料及层别。
在本发明的薄膜晶体管面板中，若所述透明电极设置在所述绝缘层的所述突出物的顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，两个相邻的所述突出物上的所述透明导电材料相连。
在本发明的薄膜晶体管面板中，所述设置在所述突出物上的所述透明导电材料是条状的或者是片状的。
在本发明的薄膜晶体管面板中，所述突出物的高度的取值范围为10-100纳米。
在本发明的薄膜晶体管面板中，所述突出物的截面形状是规则的形状或者不规则的形状。
本发明的另一个目的在于提供一种薄膜晶体管面板的制造方法，以解决薄膜晶体管面板中部分区域的液晶接收的电场不足从而导致穿透率低，显示效果受限的技术问题。
为解决上述问题，本发明构造了一种薄膜晶体管面板的制造方法，包括基板，绝缘层，透明导电材料，所述方法包括配置薄膜晶体管的步骤，所述方法还包括以下步骤：（A）在所述基板背向光源的一面上设置所述绝缘层；（B）对所述绝缘层背向所述基板的一面进行蚀刻，形成突出物，两个相邻的所述突出物的间距的取值范围为1-10μm；（C）去除所述绝缘层上蚀刻产生的残留物；（D）在所述绝缘层进行了蚀刻的一面上设置所述透明导电材料。
在本发明的薄膜晶体管面板制造方法中，所述步骤（D）具体包括以下步骤：（d1）在所述绝缘层进行了蚀刻的一面的表面上设置厚度固定的所述透明导电材料；或者（d2）在所述绝缘层进行了蚀刻的一面的表面上沉积厚度不固定的所述透明导电材料，在相邻两个所述突出物之间的所述透明导电材料的厚度大于在所述突出物顶面的所述透明导电材料的厚度；或者（d3）在所述绝缘层进行了蚀刻的一面的表面上沉积厚度不固定的所述透明导电材料，在相邻两个所述突出物之间的所述透明导电材料的厚度小于在所述突出物顶面的所述透明导电材料的厚度。
在本发明的薄膜晶体管面板制造方法中，所述步骤（d1）后还包括以下步骤：（d11）去除所述透明导电材料上的残留物。
在本发明的薄膜晶体管面板制造方法中，所述步骤（d2）还包括以下步骤：（d21）在相邻两个所述突出物之间的所述透明导电材料的表面上进行蚀刻，使蚀刻后的所述透明导电材料的厚度固定；（d22）在蚀刻后，去除所述透明导电材料上的残留物。。
在本发明的薄膜晶体管面板制造方法中，所述步骤（d3）还包括以下步骤：（d31）在所述突出物的顶面的透明导电材料的表面上进行蚀刻，使蚀刻后的透明导电材料的厚度固定；（d32）在蚀刻后，去除所述透明导电材料上的残留物。
 有益效果
本发明相对于现有技术，消除了现有技术中两透明导电电极之间液晶不倾斜的盲区，显示区域中的穿透率均匀，增强了显示效果。
 附图说明
图1为现有技术中薄膜晶体管面板的薄膜晶体管与像素区域的俯视图；
图2为图1中A-A’截面的局部视图；
图3为图2中薄膜晶体管面板的穿透率的示意图；
图4为本发明的薄膜晶体管面板的第一较佳实施例的俯视图；
图5为图4中B-B’截面的局部视图；
图6为图5中薄膜晶体管面板的穿透率的示意图；
图7为本发明的薄膜晶体管面板的第二较佳实施例的示意图；
图8为图7中薄膜晶体管面板的穿透率的示意图；
图9为本发明的薄膜晶体管面板的第三较佳实施例的俯视图；
图10为图9中C-C’截面的局部视图；
图11为图10中薄膜晶体管面板的穿透率的示意图；
图12为本发明的薄膜晶体管面板的第四较佳实施例的示意图；
图13为图12中薄膜晶体管面板的穿透率的示意图；
图14为本发明的薄膜晶体管面板的第五较佳实施例的示意图；
图15为图14中薄膜晶体管面板的穿透率的示意图；
图16为本发明薄膜晶体管面板的制造方法较佳实施例的流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
参考图4和图5，图4为本发明的薄膜晶体管面板的第一较佳实施例的俯视图，图5为图4中B-B’截面的局部视图。透明导电材料（第一透明导电材料12和第二透明导电材料15）是条状的。绝缘层5设置在基板6上，绝缘层5背向基板6的一面上设有突出物7，突出物7具有顶面8、第一侧面9和第二侧面10。在本实施例中，突出物7的截面是矩形的，绝缘层5与突出物7为同一材料及层别。突出物7的顶面8上设有第一透明导电材料12，突出物7的根部所在的平面11设有第二透明导电材料15。彩色滤光片2设置在公共电极1之上，液晶层3置于公共电极1和透明材料（第一透明导电材料12和第二透明导电材料15）之间。在本实施例中，第二透明导电材料15与突出物7的第一侧面9和相邻的突出物7的第二侧面10相接触。第一透明导电材料12的厚度和第二透明导电材料15的厚度固定，在这里，厚度固定定义为在第一透明导电材料12和第二透明导电材料15上任意选取两个区域，这两个区域的厚度相差不超过10%。突出物7的高度H均可在10-100nm（纳米）内取值。两个相邻的突出物7的间距为D，D的取值范围为1-10μm（微米）。本发明中，由于在绝缘层5上设置突出物7，并且在突出物7的顶面8和突出物7根部所在的平面11上均设置透明导电材料（第一透明导电材料12和第二透明导电材料15），因此消除了现有技术中的液晶不倾斜的盲区，提升了穿透率，如图6所示，图6中第一透明导电材料12区域对应的穿透率跟第二透明导电材料15区域对应的穿透率相差不大，同时由于两个透明导电材料在垂直方向上具有一定的落差，即电场的发出点错开布置，增加了电场对液晶的作用，提升了穿透率。
参考图7，图7为本发明的薄膜晶体管面板的第二较佳实施例的示意图。透明导电材料（第一透明导电材料12、第三透明导电材料13和第二透明导电材料15组成的整体）是条状的，本实施例的薄膜晶体管面板的俯视图与图4类似。绝缘层5设置在基板6上，绝缘层5背向基板6的一面上设有突出物7，突出物7具有顶面8、第一侧面9和第二侧面10，绝缘层5与突出物7为同一材料及层别。在本实施例中，突出物7的截面是直角梯形。突出物7的顶面8、第二侧面10上分别设有第一透明导电材料12和第三透明导电材料13，第三透明导电材料13延伸到突出物7根部所在的平面11，与第二透明导电材料15连接，优选地，第一透明导电材料12与第三透明导电材料13相连。彩色滤光片2设置在公共电极1之上，液晶层3置于公共电极1和透明材料（第一透明导电材料12、第三透明导电材料13和第二透明导电材料15组成的整体）之间。第一透明导电材料12和第三透明导电材料13的厚度固定，在这里，厚度固定定义为在第一透明导电材料12、第三透明导电材料13和第二透明导电材料15上任意选取两个区域，这两个区域的厚度相差不超过10%。突出物7的高度H的取值范围为10-100nm。两个相邻的突出物7的间距为D，D的取值范围为1-10μm。如图8所示，第三透明导电材料13区域对应的穿透率跟第一透明导电材料12区域对应的穿透率相差不大，即消除了现有技术中两相邻的透明导电材料之间的液晶不倾斜的盲区。
参考图9和图10，图9为本发明的薄膜晶体管面板的第三较佳实施例的俯视图，图10为图9中C-C’截面的局部视图。透明导电材料（第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14组成的整体）是片状的。绝缘层5设置在基板6上，绝缘层5背向基板6的一面上设有突出物7，突出物7具有顶面8、第一侧面9和第二侧面10，突出物7的截面形状是等腰梯形，绝缘层5与突出物7为同一材料及层别。第一透明导电材料12设置在突出物7的顶面8上，第三透明导电材料13和第四透明导电材料14分别设置在第一侧面9和第二侧面10上，第二透明导电材料15设置在突出物7根部所在的平面11上。彩色滤光片2设置在公共电极1之上，液晶层3置于公共电极1和透明材料（第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14组成的整体）之间。第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14的厚度固定，在这里，厚度固定定义为在第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14上任意选取两个区域，这两个区域的厚度相互之间相差不超过10%。突出物7的高度为H，H的取值范围为10-100nm。两个相邻的突出物7的间距为D，D的取值范围为1-10μm。参考图11，穿透率曲线很平坦，消除现有技术中出现的关于穿透率的波谷，增强了显示效果。
参考图12，图12为本发明的薄膜晶体管面板的第四较佳实施例的示意图。透明导电材料（第一透明导电材料、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14组成的整体）是片状的，本实施例的薄膜晶体管面板的俯视图与图9类似。绝缘层5设置在基板6上，绝缘层5背向基板6的一面上设置有突出物7，突出物7具有顶面8、第一侧面9和第二侧面10，突出物7的截面形状是矩形，绝缘层5与突出物7为同一材料及层别。第一透明导电材料12设置在突出物7的顶面8上，第三透明导电材料13和第四透明导电材料14分别设置在第一侧面13和第二侧面14上，第二透明导电材料15设置在突出物7根部所在的平面11上。两个相邻的突出物7上的透明导电材料相连。彩色滤光片2设置在公共电极1之上，液晶层3置于公共电极1和透明材料（第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14组成的整体）之间。第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14的厚度固定，在这里，厚度固定定义为在第一透明导电材料12、第二透明导电材料15、第三透明导电材料13和第四透明导电材料14上任意选取两个区域，这两个区域的厚度相互之间相差不超过10%。突出物7的高度为H，H的取值范围为10-100nm。两个相邻的突出物7的间距为D，D的取值范围为1-10μm。图13，穿透率曲线很平坦，消除现有技术中出现的关于穿透率的波谷，增强了显示效果。
参考图14，图14为本发明的薄膜晶体管面板的第五较佳实施例的示意图。透明导电材料（第一透明导电材料12、第三透明导电材料13和第四透明导电材料14组成的整体）是片状的，本实施例的薄膜晶体管面板的俯视图与图9类似。绝缘层5设置在基板6上，绝缘层5背向基板6的一面上设有突出物7，突出物7具有顶面8、第一侧面9和第二侧面10，突出物7为非规则形状，突出物7的第一侧面9和第二侧10面均是曲面，特别地，在本实施例中，突出物7的第一侧面9和第二侧面10均是四分之一圆弧曲面，绝缘层5与突出物7为同一材料及层别。第一透明导电材料12设置在突出物7的顶面8上，第三透明导电材料13和第四透明导电材料14分别设置在第一侧面13和第二侧面14上，相邻两个突出物7的相对的侧面上的透明导电材料相连。彩色滤光片2设置在公共电极1之上，液晶层3置于公共电极1和透明材料（第一透明导电材料12、第三透明导电材料13和第四透明导电材料14组成的整体）之间。第一透明导电材料12、第三透明导电材料13和第四透明导电材料14的厚度固定，在这里，厚度固定定义为在透明材料上任意选取两个区域，这两个区域的厚度相互之间相差不超过10%。突出物7的高度为H，H的取值范围为10-100nm。两个相邻的突出物7的间距为D，D的取值范围为1-10μm。图15，穿透率曲线很平坦，消除现有技术中出现的关于穿透率的波谷，增强了显示效果。
在本发明的薄膜晶体管面板中，突出物7的截面形状除了可以是上述形状外，还可以是三角形、平行四边形、半圆形等规则形状，还可以是其它不规则的形状。
参考图16，图16为本发明的薄膜晶体管面板的制造方法的较佳实施例流程图。在步骤1601，在基板6背向光源的一面上设置绝缘层5。在步骤1602，对所述绝缘层5背向基板6的一面进行蚀刻以形成突出物7，两个相邻的所述突出物7的间距的取值范围为1-10μm。在步骤1603，去除绝缘层5上蚀刻后产生的残留物。在步骤1604，在绝缘层5进行了蚀刻的一面上设置透明导电材料，具体地，可以使用磁控溅射或者沉积的方式在绝缘层进行了蚀刻的一面上设置厚度固定的透明导电材料在这里，厚度固定是指任意选取透明导电材料的两个区域，这两个区域的厚度相差不超过10%；另外，还可以使用沉积的方式在绝缘层进行了蚀刻的一面上沉积厚度不固定的透明导电材料，在这里，厚度不固定是指在两个相邻的突出物之间（包括突出物7的第一侧面9、第二侧面10和突出物7根部所在的平面11）的透明导电材料的厚度与在突出物7顶面8的透明导电材料的厚度相差超过10%，特别地，如果前者大于后者，那么在相邻两个突出物7之间的透明导电材料的表面上进行蚀刻，使蚀刻后的透明导电材料厚度固定，在这里，厚度固定是指任意选取透明导电材料的两个区域，这两个区域的厚度相差不超过10%，蚀刻后，去除透明导电材料上的残留物，如果前者小于后者，那么在突出物7顶面8的透明导电材料的表面上进行蚀刻，使蚀刻后的透明导电材料厚度固定，在这里，厚度固定是指任意选取透明导电材料的两个区域，这两个区域的厚度相差不超过10%，蚀刻后，去除透明导电材料上的残留物。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
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Claims (13)

  1. 一种薄膜晶体管面板，包括基板，绝缘层，透明导电材料，其特征在于：
    所述绝缘层背向所述基板的一面上设有突出物，相邻两个所述突出物的间距的取值范围为1-10微米；
    所述透明导电材料设置在所述绝缘层的所述突出物的顶面和侧面上，或者顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，所述绝缘层与所述突出物为同一材料及层别；
    若所述透明导电设置在所述绝缘层的所述突出物的顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，两个相邻的所述突出物上的所述透明导电材料相连；
    设置在所述突出物上的所述透明导电材料是条状的或者是片状的；
    所述突出物的高度的取值范围为10-100纳米；
    所述突出物的截面形状是规则的形状或者不规则的形状。
  2. 根据权利要求1所述的薄膜晶体管面板，其特征在于，所述透明导电材料上的任意两个区域的厚度相互之间相差不超过10%。
  3. 根据权利要求1所述的薄膜晶体管面板，其特征在于，所述突出物的截面形状是直角梯形、等腰梯形、矩形、三角形、平行四边形、半圆形中的一种。
  4. 一种薄膜晶体管面板，包括基板，绝缘层，透明导电材料，其特征在于：
    所述绝缘层背向所述基板的一面上设有突出物，相邻两个所述突出物的间距的取值范围为1-10微米；
    所述透明导电材料设置在所述绝缘层的所述突出物的顶面和侧面上，或者顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，所述绝缘层与所述突出物为同一材料及层别。
  5. 根据权利要求4所述的薄膜晶体管面板，其特征在于，若所述透明电极设置在所述绝缘层的所述突出物的顶面和底部周围的平面上，或者顶面、侧面和底部周围的平面上，两个相邻的所述突出物上的所述透明导电材料相连。
  6. 根据权利要求4所述的薄膜晶体管面板，其特征在于，设置在所述突出物上的所述透明导电材料是条状的或者是片状的。
  7. 根据权利要求4所述的薄膜晶体管面板，其特征在于，所述突出物的高度的取值范围为10-100纳米。
  8. 根据权利要求4所述的薄膜晶体管面板，其特征在于，所述突出物的截面形状是规则的形状或者不规则的形状。
  9. 一种薄膜晶体管面板的制造方法，包括基板，绝缘层，透明导电材料，所述方法包括配置薄膜晶体管的步骤，其特征在于，所述方法还包括以下步骤：
    （A）在所述基板背向光源的一面上设置所述绝缘层；
    （B）对所述绝缘层背向所述基板的一面进行蚀刻，形成突出物，两个相邻的所述突出物的间距的取值范围为1-10微米；
    （C）去除所述绝缘层上蚀刻产生的残留物；
    （D）在所述绝缘层进行了蚀刻的一面上设置所述透明导电材料。
  10. 根据权利要求9所述的薄膜晶体管面板的制造方法，其特征在于，所述步骤（D）具体包括以下步骤：
    （d1）在所述绝缘层进行了蚀刻的一面的表面上设置厚度固定的所述透明导电材料；或者
    （d2）在所述绝缘层进行了蚀刻的一面的表面上沉积厚度不固定的所述透明导电材料，在相邻两个所述突出物之间的所述透明导电材料的厚度大于在所述突出物顶面的所述透明导电材料的厚度；或者
    （d3）在所述绝缘层进行了蚀刻的一面的表面上沉积厚度不固定的所述透明导电材料，在相邻两个所述突出物之间的所述透明导电材料的厚度小于在所述突出物顶面的所述透明导电材料的厚度。
  11. 根据权利要求10所述的薄膜晶体管面板的制造方法，其特征在于，所述步骤（d1）后还包括以下步骤：
    （d11）去除所述透明导电材料上的残留物。
  12. 根据权利要求10所述的薄膜晶体管面板的制造方法，其特征在于，所述步骤（d2）还包括以下步骤：
    （d21）在相邻两个所述突出物之间的所述透明导电材料的表面上进行蚀刻，使蚀刻后的所述透明导电材料的厚度固定；
    （d22）在蚀刻后，去除所述透明导电材料上的残留物。
  13. 根据权利要求10所述的薄膜晶体管面板的制造方法，其特征在于，所述步骤（d3）还包括以下步骤：
    （d31）在所述突出物的顶面的所述透明导电材料的表面上进行蚀刻，使蚀刻后的所述透明导电材料的厚度固定；
    （d32）在蚀刻后，去除所述透明导电材料上的残留物。
PCT/CN2011/078312 2011-06-19 2011-08-11 薄膜晶体管面板及其制造方法 Ceased WO2012174780A1 (zh)

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