WO2012171342A1 - Ac-dc switch power supply and power triode thereof - Google Patents

Ac-dc switch power supply and power triode thereof Download PDF

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Publication number
WO2012171342A1
WO2012171342A1 PCT/CN2012/070382 CN2012070382W WO2012171342A1 WO 2012171342 A1 WO2012171342 A1 WO 2012171342A1 CN 2012070382 W CN2012070382 W CN 2012070382W WO 2012171342 A1 WO2012171342 A1 WO 2012171342A1
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Prior art keywords
triode
management circuit
power supply
power management
power
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PCT/CN2012/070382
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French (fr)
Chinese (zh)
Inventor
郑凌波
林新春
罗小荣
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深圳市力生美半导体器件有限公司
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Publication of WO2012171342A1 publication Critical patent/WO2012171342A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Definitions

  • the invention relates to a circuit structure of a switching power supply, in particular to a circuit implementation of a switching tube in an AC-DC switching power supply.
  • the source of electronic products is the high-voltage AC power supply on the socket, and all control circuits require low-voltage DC power or battery power supply. Therefore, from the high-voltage AC provided by the power grid to the various low-voltage power supplies required for the operation of electronic products and charging the battery, a conversion circuit from alternating current to low-voltage DC output is required, which is an AC-DC power supply, and the most commonly used AC-DC.
  • the power supply is a high frequency switching power supply.
  • the most basic AC-DC switching power supply is to directly rectify the AC power supply, and output the DC high voltage power supply to the transformer.
  • the transformer controls the change of energy in the transformer through the process of opening and closing the high frequency switch tube, thereby controlling the output of the low voltage DC power supply.
  • the subsequent control circuits of the various parts work.
  • the power management circuit that is, the control chip, is responsible for sampling the input and output of the power supply and the temperature, error amplification, feedback control, and finally controlling the switching process of the switching tube to achieve the required output of the system.
  • the power system specifications require output voltage magnitude, accuracy, output current magnitude and accuracy, output voltage ripple magnitude, conversion efficiency, standby power consumption, output and input isolation requirements that may be required for electrical connections, and Adapt to the range of input voltage, EMI indicators, etc.
  • Safety aspects include over- and under-voltage protection of the input and output voltages, over-temperature protection of the system, and short-circuit protection of the outputs.
  • the power management circuit and its peripheral system coordination work to control the change of power energy by controlling the opening and closing of the switch.
  • the switch tube is the executor of the switching power supply
  • the power management circuit is the controller.
  • the peripheral transformer and other magnetic components and capacitive components constitute the main body of energy conversion. Therefore, the power management circuit and the switch are inseparable in the switching power conversion: some switching power management circuits and switching transistors are used together, and some are combined by working together relatively independent devices.
  • the performance of the switch has a direct impact on the ease of control and the final performance of the system.
  • the components of the switching tube mainly include M0S tubes and triode tubes.
  • the devices used as switching tubes in high-power switching power supplies are mainly M0S tubes, IGBTs, IPM modules, etc.
  • M0S tube and triode are different.
  • the advantage of the triode is that the withstand voltage is easy to be high, which is very important for the safety of the AC-DC switching power supply.
  • the input voltage range is from AC85V to AC380V.
  • the other is the quality of the grid, and the quality of the grid in some backward areas is quite poor.
  • the supplied AC power supply voltage deviation ratio can be more than twice the standard value.
  • the triode has a great advantage.
  • the shortcomings of the triode mainly include: Because it is a current-driven operation, it requires a relatively large operating current during operation, which is difficult to start, requires a large starting current and a longer system startup time; and is relatively large due to the need for a relatively large driving current. Loss; Drive is complicated, because the amplification factor of the triode is discrete, it is difficult to control the proper drive current.
  • the drive If the drive is too large, it will enter the deep saturation conduction state when it is turned on, and the deep saturation drive needs more work. The current will reduce the switching frequency of the triode, which will affect the control accuracy of the switching tube and increase the switching loss of the triode. If the driving is not enough, the system may enter the linear working area, and the switching tube is not fully conductive, which will generate a large Power consumption, and may burn the switch; not suitable for high current switches.
  • the existing AC-DC switching power supply often needs to be equipped with two or more transistors in the power management circuit to realize the corresponding switch control, which not only increases the number of components, but directly Increasing material costs and PCB space will also increase system risk due to the differences in the devices themselves.
  • triode-type switch tube structure it is necessary to improve the existing triode-type switch tube structure, and in the case of giving full play to the advantages of the triode tube withstand voltage being high, the triode drive current can be overcome, the drive is complicated, and the like, and in one wafer Two or more triodes are integrated to meet the requirements of the AC-DC switching power supply in conjunction with the power management circuit under the premise of controlling the cost. Summary of the invention
  • the technical problem to be solved by the present invention is to overcome the deficiencies of the prior art described above, and to provide an AC-DC switching power supply and a power triode structure thereof, which can ensure the performance of the switching power supply under the premise of controlling the cost.
  • the technical solution proposed by the present invention for the above technical problem includes a power transistor of an AC-DC switching power supply, comprising a substrate as a collector, at least two base regions formed on the substrate, An emitter formed on each of the base regions and a collector pin electrically connected to the substrate, at least two base pins electrically connected to the base regions, and at least two electrically connected to the emitters
  • the emitter pins, the substrate, each of the base regions, the emitters on each of the base regions, and the corresponding pins form a triode unit.
  • the current capability of the triode units has at least two specifications.
  • the voltage resistance of the triode units is not lower than a set value.
  • the substrate is made of an N-type semiconductor material, and the base regions are made of a P-type semiconductor material, and the emitters are made of an N-type semiconductor material.
  • the substrate is made of a P-type semiconductor material, and the base regions are made of an N-type semiconductor material, and the emitters are made of a P-type semiconductor material.
  • the technical solution proposed by the present invention for the above technical problem further includes an AC-DC switching power supply, comprising a separate power management circuit and a switch tube electrically connected to the power management circuit, the switch tube having the above power Triode structure.
  • an AC-DC switching power supply comprising a separate power management circuit and a switch tube electrically connected to the power management circuit, the switch tube having the above power Triode structure.
  • one of the triode units is controlled by the power management circuit and serves as a main switch, the other of the triode units being controlled by the power management circuit for startup.
  • one of the triode units is controlled by the power management circuit and serves as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit.
  • Drive saturation control In another preferred embodiment of the present invention, one of the triode units is controlled by the power management circuit and serves as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. Drive saturation control.
  • one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. For the pre-driver.
  • one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and is activated. Yet another of the triode units is controlled by the power management circuit and is used as a front stage drive for the main switching unit.
  • the AC-DC switching power supply of the present invention and its power transistor enable flexible driving and control of the triode type switch tube by simultaneously integrating at least two common collector triode units in one package. Therefore, the performance of the switching power supply can be ensured under the premise of controlling the cost.
  • Figure 1 is a schematic view showing the structure of an embodiment of a power transistor of the present invention.
  • the structure of the power transistor embodiment of the AC-DC switching power supply of the present invention generally comprises: a substrate 1 as a collector, and first and second isolated on the substrate 1 which are isolated from each other Base regions 2, 4, first and second emitters 3, 5 respectively formed on the first and second base regions 2, 4, and collector leads electrically connected to the substrate 1 a first base pin B1 electrically connected to the first base region 2, a first emitter pin El electrically connected to the first emitter 3, and a second base region 4 electrically connected a second base pin B2 and a second emitter pin E2 electrically connected to the second emitter 5.
  • Substrate 1, first base region 2, first emitter 3 and corresponding pins (:, Bl El constitutes a first unit.
  • the substrate 1, the second base region 4, the second emitter 5 and the corresponding pins (:, B2, E2 form a second unit.
  • the first unit has a current capacity greater than the first unit
  • the current capability of the two cells, the first cell has a withstand voltage capability that is substantially equivalent to the withstand voltage capability of the second cell.
  • the substrate 1, the base 2, 4 and the emitters 3, 5 are arranged from the bottom to the top in the vertical direction.
  • the substrate 1 is made of an N-type semiconductor, and the bases 2, 4 are made of a P-type semiconductor material, and the emitters 3 and 5 are made of an N-type semiconductor material. Or,
  • the substrate 1 is made of a P-type semiconductor material, and the base electrodes 2 and 4 are made of an N-type semiconductor material, and the emitter electrodes 3 and 5 are made of a P-type semiconductor material.
  • the NPN transistor is composed of two N-type semiconductors and one P-type semiconductor.
  • the P-type semiconductor forms two back-to-back PN junctions with two N-type semiconductors in the middle of two N-type semiconductor materials.
  • the electrodes of the layer material are led out, and the performance of the triode is realized between the three electrodes, and such a structure forms an NPN transistor.
  • the current capability of the triode is proportional to the cross-sectional area of the PN junction, and the first base can be designed.
  • the cross-sectional area of the region 2 is larger than the cross-sectional area of the second base region 4, and the cross-sectional area of the first emitter region 3 is larger than the cross-sectional area of the second emitter region 5.
  • the formed triode has a common collector, two pairs of base or emitters separated from each other, and two or more common collector triode units According to the different area occupied by the base and the emitter, different triodes have different current capabilities, but all have substantially the same withstand voltage index, that is, the withstand voltage capability of each triode unit exceeds a set value. To meet the needs of practical applications.
  • the parameters of each layer of material include the physical concentration, and the thickness and size of the mutual covering materials are controlled.
  • the pad of the extraction electrode, the passivation protective layer, the protective layer of the substrate, and the structure of the ferrite layer in the actual product are not reflected.
  • the power transistor structure of the present invention may be packaged separately or together with a power management circuit.
  • the pin refers to the PAD of the wafer and the metal lead which is formed during the packaging process and the metal lead which is formed after the package is formed and electrically connected to the device.
  • FIG. 2 it is an equivalent diagram of the NPN type power transistor of the present invention. It can be used as a switching tube in AC-DC switching power supply, and it can be matched with the power management circuit to realize flexible driving and control. For example: By starting the second unit with small current, the first unit of high current is the master. For switching, it can save the starting current. By driving the saturation control of the first unit of the small current of the second unit with a small current, the driving current of the triode can be precisely controlled. By switching the control by classification, the driving current can be reduced. The need to improve system efficiency.
  • triode units may be constructed on the same collector, one of the three triode units being controlled by the power management circuit and used as a main switch, and the other being controlled by the power source.
  • the management circuit is used for starting, and another one is controlled by the power management circuit and is used as a pre-stage driving unit for the main switch.

Abstract

Provided are an AC-DC switch power supply and a power triode thereof. The power triode includes a substrate (1) as a collector, at least two base regions (2, 4) isolated from each other formed on the substrate, an emitter (3, 5)formed on each base region and a collector pin (C) electrically connected to the substrate, at least two base pins (Bl, B2) electrically connected to the base regions, and at least two emitter pins (El, E2) electrically connected to the emitters, and the substrate, each base region and the emitter on each base region and the corresponding pins constitute a triode unit. The AC-DC switch power supply includes a power supply management circuit and a switch tube electrically connected to the power supply management circuit, with the switch tube having the structure of the power triode. The AC-DC switch power supply can ensure the performance of the switch power supply under the premise of controlling the cost.

Description

AC-DC开关电源及其功率三极管 技术领域  AC-DC switching power supply and its power transistor
本发明涉及开关电源的电路结构， 尤其涉及 AC-DC开关电源中开关管的电路实现。 背景技术  The invention relates to a circuit structure of a switching power supply, in particular to a circuit implementation of a switching tube in an AC-DC switching power supply. Background technique
随着社会的发展， 电器和各类电子产品越来越智能化， 更环保和省电， 更安全。 电子 电器产品中需要各类不同电压的电源供给各类控制芯片和电路工作， 电子产品电源的源头 就是插座上的高压交流电源，而所有的控制电路几乎都需要低压的直流电源或电池供电工 作，所以从电网提供的高压交流电到电子产品工作需求的各类不同的低电压电源及给电池 充电都需要一个从交流电到低压直流输出的转换电路，既 AC-DC电源，目前最常用的 AC-DC 电源是高频开关电源。  With the development of society, electrical appliances and various electronic products are becoming more and more intelligent, more environmentally friendly, more energy efficient and safer. In electrical and electronic products, various types of power supplies are required to supply various types of control chips and circuits. The source of electronic products is the high-voltage AC power supply on the socket, and all control circuits require low-voltage DC power or battery power supply. Therefore, from the high-voltage AC provided by the power grid to the various low-voltage power supplies required for the operation of electronic products and charging the battery, a conversion circuit from alternating current to low-voltage DC output is required, which is an AC-DC power supply, and the most commonly used AC-DC. The power supply is a high frequency switching power supply.
最基本的 AC-DC开关电源是把交流电源直接整流， 输出直流高压电源给变压器工作， 变压器通过高频开关管的开和关的过程控制能量在变压器里的变化，从而控制输出低压直 流电源供后续的各部分的控制电路工作。  The most basic AC-DC switching power supply is to directly rectify the AC power supply, and output the DC high voltage power supply to the transformer. The transformer controls the change of energy in the transformer through the process of opening and closing the high frequency switch tube, thereby controlling the output of the low voltage DC power supply. The subsequent control circuits of the various parts work.
在 AC-DC开关电源中， 电源管理电路， 也就是控制芯片， 负责对电源的输入和输出及 温度等情况进行采样， 误差放大， 反馈控制， 最后控制开关管的开关过程以实现系统要求 的输出指标及控制系统的安全运行。 其中电源系统的指标要求有输出电压大小， 精度， 输 出电流大小及精度， 输出电压纹波大小， 转换效率， 待机功耗， 输出和输入的在电器连接 上的可能需要的隔离要求等， 以及能适应输入的电压的范围， EMI指标等。 安全方面的控 制包括输入及输出电压的过欠压保护， 系统的过温保护， 输出的短路保护等等。  In the AC-DC switching power supply, the power management circuit, that is, the control chip, is responsible for sampling the input and output of the power supply and the temperature, error amplification, feedback control, and finally controlling the switching process of the switching tube to achieve the required output of the system. Safe operation of indicators and control systems. The power system specifications require output voltage magnitude, accuracy, output current magnitude and accuracy, output voltage ripple magnitude, conversion efficiency, standby power consumption, output and input isolation requirements that may be required for electrical connections, and Adapt to the range of input voltage, EMI indicators, etc. Safety aspects include over- and under-voltage protection of the input and output voltages, over-temperature protection of the system, and short-circuit protection of the outputs.
在实际工作中， 电源管理电路及其外围的系统协调工作是通过控制开关管的开通和关 闭来控制电源能量的变换的。 开关管是开关电源工作的执行者， 而电源管理电路是控制 者， 外围的变压器及其他的磁性元件及容性元件等则构成能量转换的主体。 所以电源管理 电路和开关管在开关电源变换中是不可分割的部分：有些开关电源管理电路和开关管是做 在一起的， 有些是通过将相对独立的器件组合到一起工作。  In actual work, the power management circuit and its peripheral system coordination work to control the change of power energy by controlling the opening and closing of the switch. The switch tube is the executor of the switching power supply, and the power management circuit is the controller. The peripheral transformer and other magnetic components and capacitive components constitute the main body of energy conversion. Therefore, the power management circuit and the switch are inseparable in the switching power conversion: some switching power management circuits and switching transistors are used together, and some are combined by working together relatively independent devices.
开关管的性能对控制的难易和系统的最后性能有着直接的影响。在中小功率的开关电 源中作为开关管的器件主要有 M0S管和三极管。在大功率开关电源中用做开关管的器件主 要为 M0S管， IGBT， IPM模块等。  The performance of the switch has a direct impact on the ease of control and the final performance of the system. In the medium and small power switching power supply, the components of the switching tube mainly include M0S tubes and triode tubes. The devices used as switching tubes in high-power switching power supplies are mainly M0S tubes, IGBTs, IPM modules, etc.
针对在中小功率的开关电源应用范围， M0S管和三极管是各有千秋。 三极管的优点是 耐压容易做高， 这点对 AC-DC开关电源工作的安全性非常重要。 随着生产的全球化， 电 器产品的工作电压要求越来越宽， 要求适应全球的电网， 其中有两个问题需要面对： 一个 是电网本身的规格不同， 有 AC110V, AC240V, 甚至有要求到输入的电压范围从 AC85V 到 AC380V均能正常工作的。 另一个是电网质量问题， 有些落后地区的电网质量相当差， 供应的交流电源电压偏差比例可以达到标准值的 2倍以上。 因此， 越来越多的产品要求有 很宽的输入工作电压范围， 从而对开关管的耐压指标要求就比较高。 与 M0S管相比， 三 极管的耐压更容易做高， 加上三极管的成本比较低， 在特别要求高压的应用场合， 三极管 有很大的优势。 三极管的缺点主要包括： 由于是电流驱动工作， 工作时需要比较大的工作 电流， 启动困难， 需要大的启动电流和更长的系统启动时间； 因需要比较大的驱动电流而 带来的比较大的损耗； 驱动复杂， 因三极管的放大倍数具有离散性， 所以要控制合适的驱 动电流比较困难， 如果驱动太大， 导通时会进入深饱和导通状态， 而深饱和驱动需求更大 的工作电流， 同时会减小三极管的开关频率， 会影响开关管的控制精度同时增加三极管的 开关损耗， 而如果驱动不够， 系统可能会进入线性工作区， 开关管导通不完全， 会产生 很大的功耗， 并可能会烧毁开关管； 不适用于大电流开关。 For the application of switching power supply for medium and small power, M0S tube and triode are different. The advantage of the triode is that the withstand voltage is easy to be high, which is very important for the safety of the AC-DC switching power supply. With the globalization of production, the working voltage requirements of electrical products are becoming wider and wider, and it is required to adapt to the global power grid. There are two problems to be faced: One is the different specifications of the power grid itself, there are AC110V, AC240V, and even the requirements The input voltage range is from AC85V to AC380V. The other is the quality of the grid, and the quality of the grid in some backward areas is quite poor. The supplied AC power supply voltage deviation ratio can be more than twice the standard value. Therefore, more and more products require a wide range of input operating voltages, so the requirements for the withstand voltage of the switch tube are relatively high. Compared with the M0S tube, the withstand voltage of the triode is easier to be high, and the cost of the triode is relatively low. In applications where high voltage is particularly required, the triode has a great advantage. The shortcomings of the triode mainly include: Because it is a current-driven operation, it requires a relatively large operating current during operation, which is difficult to start, requires a large starting current and a longer system startup time; and is relatively large due to the need for a relatively large driving current. Loss; Drive is complicated, because the amplification factor of the triode is discrete, it is difficult to control the proper drive current. If the drive is too large, it will enter the deep saturation conduction state when it is turned on, and the deep saturation drive needs more work. The current will reduce the switching frequency of the triode, which will affect the control accuracy of the switching tube and increase the switching loss of the triode. If the driving is not enough, the system may enter the linear working area, and the switching tube is not fully conductive, which will generate a large Power consumption, and may burn the switch; not suitable for high current switches.
现有的 AC-DC开关电源， 为了满足上述各种情况下的要求， 往往需要在电源管理电路 配备两个设置两个以上的三极管来实现相应的开关控制， 这不单增加元器件的数目， 直接 增加物料成本和 PCB空间， 还会由于各器件本身的差异性， 使得系统风险增大。  In order to meet the requirements of the above various situations, the existing AC-DC switching power supply often needs to be equipped with two or more transistors in the power management circuit to realize the corresponding switch control, which not only increases the number of components, but directly Increasing material costs and PCB space will also increase system risk due to the differences in the devices themselves.
可见， 实有必要对现有的三极管型的开关管结构进行改进， 在充分发挥三极管耐压容 易做高的优点的情况下， 可以克服三极管驱动电流大、 驱动复杂等缺陷， 并在一个晶圆上 将两个或两个以上的三极管集成， 以在控制成本的前提下， 满足与电源管理电路搭配起来 共同满足 AC-DC开关电源的有关要求。 发明内容  It can be seen that it is necessary to improve the existing triode-type switch tube structure, and in the case of giving full play to the advantages of the triode tube withstand voltage being high, the triode drive current can be overcome, the drive is complicated, and the like, and in one wafer Two or more triodes are integrated to meet the requirements of the AC-DC switching power supply in conjunction with the power management circuit under the premise of controlling the cost. Summary of the invention
本发明要解决的技术问题在于克服上述现有技术存在的不足，而提出一种 AC-DC开关 电源及其功率三极管结构， 可在控制成本的前提下， 确保开关电源的性能。  The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art described above, and to provide an AC-DC switching power supply and a power triode structure thereof, which can ensure the performance of the switching power supply under the premise of controlling the cost.
本发明针对上述技术问题而提出的技术方案包括，提出一种 AC-DC开关电源的功率三 极管， 包括一作为集电极的衬底， 在该衬底上形成的相互隔离的至少两个基区、 在每个基 区上形成的一个发射极以及与该衬底电连接的集电极引脚、与该些基区电连接的至少两个 基极引脚、 与该些发射极电连接的至少两个发射极引脚， 该衬底、 每个基区、 每个基区上 的发射极及相应的引脚构成一个三极管单元。  The technical solution proposed by the present invention for the above technical problem includes a power transistor of an AC-DC switching power supply, comprising a substrate as a collector, at least two base regions formed on the substrate, An emitter formed on each of the base regions and a collector pin electrically connected to the substrate, at least two base pins electrically connected to the base regions, and at least two electrically connected to the emitters The emitter pins, the substrate, each of the base regions, the emitters on each of the base regions, and the corresponding pins form a triode unit.
该些三极管单元的电流能力至少具有两种规格。  The current capability of the triode units has at least two specifications.
该些三极管单元的耐压能力均不低于一设定值。  The voltage resistance of the triode units is not lower than a set value.
该衬底是 N型半导体材质的， 该些基区是 P型半导体材质的， 该些发射极是 N型半导 体材质的。  The substrate is made of an N-type semiconductor material, and the base regions are made of a P-type semiconductor material, and the emitters are made of an N-type semiconductor material.
该衬底是 P型半导体材质的， 该些基区是 N型半导体材质的， 该些发射极是 P型半导 体材质的。  The substrate is made of a P-type semiconductor material, and the base regions are made of an N-type semiconductor material, and the emitters are made of a P-type semiconductor material.
本发明针对上述技术问题而提出的技术方案还包括， 提一种 AC-DC开关电源， 包括各 自独立的一电源管理电路和与该电源管理电路电连接的开关管，该开关管具有上述的功率 三极管结构。 在本发明的一个优选实施例中，该些三极管单元中的一个受控于该电源管理电路并做 主开关用， 该些三极管单元中的另一个受控于该电源管理电路并做启动用。 The technical solution proposed by the present invention for the above technical problem further includes an AC-DC switching power supply, comprising a separate power management circuit and a switch tube electrically connected to the power management circuit, the switch tube having the above power Triode structure. In a preferred embodiment of the invention, one of the triode units is controlled by the power management circuit and serves as a main switch, the other of the triode units being controlled by the power management circuit for startup.
在本发明的另一个优选实施例中，该些三极管单元中的一个受控于该电源管理电路并 做主开关用，该些三极管单元中的另一个受控于该电源管理电路并做主开关用单元的驱动 饱和度控制用。  In another preferred embodiment of the present invention, one of the triode units is controlled by the power management circuit and serves as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. Drive saturation control.
在本发明的又一个优选实施例中，该些三极管单元中的一个受控于该电源管理电路并 做主开关用，该些三极管单元中的另一个受控于该电源管理电路并做主开关用单元的前级 驱动用。  In still another preferred embodiment of the present invention, one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. For the pre-driver.
在本发明的再一个优选实施例中，该些三极管单元中的一个受控于该电源管理电路并 做主开关用， 该些三极管单元中的另一个受控于该电源管理电路并做启动用， 该些三极管 单元中的又一个受控于该电源管理电路并做主开关用单元的前级驱动用。  In still another preferred embodiment of the present invention, one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and is activated. Yet another of the triode units is controlled by the power management circuit and is used as a front stage drive for the main switching unit.
与现有技术相比， 本发明的 AC-DC开关电源及其功率三极管， 通过在一个封装中同时 集成至少两个共集电极的三极管单元， 使得三极管型的开关管能够实现灵活驱动和控制， 从而可在控制成本的前提下， 确保开关电源的性能。 附图说明  Compared with the prior art, the AC-DC switching power supply of the present invention and its power transistor enable flexible driving and control of the triode type switch tube by simultaneously integrating at least two common collector triode units in one package. Therefore, the performance of the switching power supply can be ensured under the premise of controlling the cost. DRAWINGS
图 1是本发明的功率三极管实施例的结构示意图。  BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the structure of an embodiment of a power transistor of the present invention.
图 2是本发明的功率三极管实施例的等效电原理示意图。 具体实施方式  2 is a schematic diagram of an equivalent electrical principle of the power triode embodiment of the present invention. detailed description
以下结合附图， 对本发明予以进一步地详尽阐述。  The invention will be further elaborated below in conjunction with the drawings.
如图 1所示， 本发明的 AC-DC开关电源的功率三极管实施例的结构大致包括： 一作为 集电极的衬底 1， 在该衬底 1上形成的相互隔离的第一、 第二两个基区 2、 4， 在该第一、 第二两个基区 2、 4上各自分别形成的第一、 第二两个发射极 3、 5以及与该衬底 1电连接 的集电极引脚 (：、与该第一基区 2电连接的第一基极引脚 Bl、与该第一发射极 3电连接的 第一发射极引脚 El、 与该第二基区 4电连接的第二基极引脚 B2和与该第二发射极 5电连 接的第二发射极引脚 E2。 衬底 1、 第一基区 2、 第一发射极 3及相应的引脚 (：、 Bl、 El构 成一第一单元。 衬底 1、 第二基区 4、 第二发射极 5及相应的引脚（：、 B2、 E2构成一第二 单元。第一单元具有的电流能力大于该第二单元的电流能力， 第一单元具有的耐压能力大 致等同于该第二单元的耐压能力。  As shown in FIG. 1, the structure of the power transistor embodiment of the AC-DC switching power supply of the present invention generally comprises: a substrate 1 as a collector, and first and second isolated on the substrate 1 which are isolated from each other Base regions 2, 4, first and second emitters 3, 5 respectively formed on the first and second base regions 2, 4, and collector leads electrically connected to the substrate 1 a first base pin B1 electrically connected to the first base region 2, a first emitter pin El electrically connected to the first emitter 3, and a second base region 4 electrically connected a second base pin B2 and a second emitter pin E2 electrically connected to the second emitter 5. Substrate 1, first base region 2, first emitter 3 and corresponding pins (:, Bl El constitutes a first unit. The substrate 1, the second base region 4, the second emitter 5 and the corresponding pins (:, B2, E2 form a second unit. The first unit has a current capacity greater than the first unit The current capability of the two cells, the first cell has a withstand voltage capability that is substantially equivalent to the withstand voltage capability of the second cell.
衬底 1、 基极 2、 4和发射极 3、 5是在垂直方向由下往上排布的。  The substrate 1, the base 2, 4 and the emitters 3, 5 are arranged from the bottom to the top in the vertical direction.
衬底 1是 N型半导体材质的， 该基极 2、 4是 P型半导体材质的， 该发射极 3、 5是 N 型半导体材质的。 或者，  The substrate 1 is made of an N-type semiconductor, and the bases 2, 4 are made of a P-type semiconductor material, and the emitters 3 and 5 are made of an N-type semiconductor material. Or,
衬底 1是 P型半导体材质的， 该基极 2、 4是 N型半导体材质的， 该发射极 3、 5是 P 型半导体材质的。 考虑到， NPN三极管是由两个 N型半导体和一个 P型半导体组合而成， P型半导体在 两个 N型半导体材料中间， 分别和两个 N型半导体形成背靠背的两个 PN结， 把三层材料 的电极引出来，这三个电极之间就实现了三极管的性能，这样的结构就形成了 NPN三极管。 由于三极管的参数和三层材料的参数和几何形状制造工艺等有关，在其他参数都相同的情 况下， 三极管的电流能力和其 PN结的剖面面积成正比， 因此， 可以设计成该第一基区 2 的剖面面积大于第二基区 4的剖面面积，第一发射区 3的剖面面积大于第二发射区 5的剖 面面积。 The substrate 1 is made of a P-type semiconductor material, and the base electrodes 2 and 4 are made of an N-type semiconductor material, and the emitter electrodes 3 and 5 are made of a P-type semiconductor material. It is considered that the NPN transistor is composed of two N-type semiconductors and one P-type semiconductor. The P-type semiconductor forms two back-to-back PN junctions with two N-type semiconductors in the middle of two N-type semiconductor materials. The electrodes of the layer material are led out, and the performance of the triode is realized between the three electrodes, and such a structure forms an NPN transistor. Since the parameters of the triode are related to the parameters of the three-layer material and the manufacturing process of the geometry, the current capability of the triode is proportional to the cross-sectional area of the PN junction, and the first base can be designed. The cross-sectional area of the region 2 is larger than the cross-sectional area of the second base region 4, and the cross-sectional area of the first emitter region 3 is larger than the cross-sectional area of the second emitter region 5.
相比于常规的作为开关电源中做开关管用的功率三极管在 C 极衬底上只制作一个基 区， 及在基区上只制作一个发射区， 最后形成一个集电极， 一个发射极， 一个基极， 而本 发明的三极管结构， 形成的三极管具有公用的一个集电极， 成对的相互隔离的二个或多个 基极和发射极， 形成两个或两个以上的共集电极的三极管单元， 根据基极和发射极所占的 面积不同，不同的三极管具有不同的电流能力，但都具有大致相同的耐压指标，也就是说， 各个三极管单元的耐压能力均超过一设定值， 以满足实际应用的需要。  Compared with the conventional power transistor used as a switching tube in a switching power supply, only one base region is formed on the C-electrode substrate, and only one emitter region is formed on the base region, and finally a collector, an emitter, and a base are formed. In the triode structure of the present invention, the formed triode has a common collector, two pairs of base or emitters separated from each other, and two or more common collector triode units According to the different area occupied by the base and the emitter, different triodes have different current capabilities, but all have substantially the same withstand voltage index, that is, the withstand voltage capability of each triode unit exceeds a set value. To meet the needs of practical applications.
需要说明的是， 为了得到需要的三极管参数， 其中各层材料的参数包括物理的浓度， 相互的覆盖材料的厚度和尺寸都是被控制的。实际产品中的引出电极的 pad, 钝化保护层， 衬底的保护层以及渡层等结构没有体现出来。  It should be noted that in order to obtain the required triode parameters, the parameters of each layer of material include the physical concentration, and the thickness and size of the mutual covering materials are controlled. The pad of the extraction electrode, the passivation protective layer, the protective layer of the substrate, and the structure of the ferrite layer in the actual product are not reflected.
本发明的功率三极管结构，可以是单独封装的，也可以是与电源管理电路一并封装的。 本发明的功率三极管结构，其引脚是指晶圆的 PAD及封装过程中产生的和其相连接的金属 引线及封装后形成器件的和其相电联的引脚。  The power transistor structure of the present invention may be packaged separately or together with a power management circuit. In the power transistor structure of the present invention, the pin refers to the PAD of the wafer and the metal lead which is formed during the packaging process and the metal lead which is formed after the package is formed and electrically connected to the device.
如图 2所示， 为本发明的 NPN型功率三极管的等效图。可将其在 AC-DC开关电源中用 作开关管， 与电源管理电路相搭配， 以实现灵活驱动和控制， 比如： 通过将小电流的第二 单元做启动用， 大电流的第一单元做主开关用， 可以节省启动电流； 通过将小电流的第二 单元做大电流的第一单元的驱动饱和度控制用， 可以使三极管的驱动电流精确控制； 通过 分级进行开关控制， 可以减小驱动电流的需求， 可以提高系统效率。  As shown in Fig. 2, it is an equivalent diagram of the NPN type power transistor of the present invention. It can be used as a switching tube in AC-DC switching power supply, and it can be matched with the power management circuit to realize flexible driving and control. For example: By starting the second unit with small current, the first unit of high current is the master. For switching, it can save the starting current. By driving the saturation control of the first unit of the small current of the second unit with a small current, the driving current of the triode can be precisely controlled. By switching the control by classification, the driving current can be reduced. The need to improve system efficiency.
需要说明的是，虽然上述的实施例结构只是提到了在同一个集电极上构建出两个三极 管单元的情形， 但本发明并不以此为限， 可以在同一个集电极上构建出三个、 四个以及更 多数目的三极管单元。例如，可以是在同一个集电极上构建出三个三极管单元（图未示出）， 这三个三极管单元中的一个受控于该电源管理电路并做主开关用，另一个受控于该电源管 理电路并做启动用， 又一个受控于该电源管理电路并做主开关用单元的前级驱动用。 上述内容， 仅为本发明的较佳实施例， 并非用于限制本发明的实施方案， 本领域普通 技术人员根据本发明的主要构思和精神， 可以十分方便地进行相应的变通或修改， 故本发 明的保护范围应以权利要求书所要求的保护范围为准。  It should be noted that although the above embodiment structure only mentions the case of constructing two triode units on the same collector, the present invention is not limited thereto, and three can be constructed on the same collector. , four and a greater number of triode units. For example, three triode units (not shown) may be constructed on the same collector, one of the three triode units being controlled by the power management circuit and used as a main switch, and the other being controlled by the power source. The management circuit is used for starting, and another one is controlled by the power management circuit and is used as a pre-stage driving unit for the main switch. The above is only a preferred embodiment of the present invention, and is not intended to limit the embodiments of the present invention. Those skilled in the art can make various modifications and/or modifications based on the main idea and spirit of the present invention. The scope of protection of the invention shall be determined by the scope of protection claimed in the claims.

Claims

权利要求 Rights request
1、 一种 AC-DC开关电源的功率三极管， 其特征在于， 包括一作为集电极的衬底， 在 该衬底上形成的相互隔离的至少两个基区、在每个基区上形成的一个发射极以及与该衬底 电连接的集电极引脚、与该些基区电连接的至少两个基极引脚、与该些发射极电连接的至 少两个发射极引脚， 该衬底、每个基区、每个基区上的发射极及相应的引脚构成一个三极 管单元。 What is claimed is: 1. A power transistor for an AC-DC switching power supply, comprising: a substrate as a collector, at least two base regions formed on the substrate separated from each other, formed on each of the base regions An emitter and a collector pin electrically connected to the substrate, at least two base pins electrically connected to the base regions, and at least two emitter pins electrically connected to the emitters The bottom, each base region, the emitters on each of the base regions, and the corresponding pins form a triode unit.
2、 依据权利要求 1所述的功率三极管， 其特征在于， 该些三极管单元的电流能力至 少具有两种规格。  2. A power transistor according to claim 1, characterized in that the current capability of the triode units has at least two specifications.
3、 依据权利要求 1所述的功率三极管， 其特征在于， 该些三极管单元的耐压能力均 不低于一设定值。  3. The power transistor according to claim 1, wherein the voltage resistance of the triode units is not lower than a set value.
4、 依据权利要求 1所述的功率三极管， 其特征在于， 该衬底是 N型半导体材质的， 该些基区是 P型半导体材质的， 该些发射极是 N型半导体材质的。  4. The power transistor according to claim 1, wherein the substrate is made of an N-type semiconductor material, and the base regions are made of a P-type semiconductor material, and the emitters are made of an N-type semiconductor material.
5、 依据权利要求 1所述的功率三极管， 其特征在于， 该衬底是 P型半导体材质的， 该些基区是 N型半导体材质的， 该些发射极是 P型半导体材质的。  The power transistor according to claim 1, wherein the substrate is made of a P-type semiconductor material, and the base regions are made of an N-type semiconductor material, and the emitters are made of a P-type semiconductor material.
6、一种 AC-DC开关电源，包括一电源管理电路和与该电源管理电路电连接的开关管， 其特征在于， 该开关管是具有由权利要求 1至 5任一项所述的功率三极管结构的。  An AC-DC switching power supply comprising a power management circuit and a switch tube electrically connected to the power management circuit, wherein the switch tube has the power transistor according to any one of claims 1 to 5. Structural.
7、 依据权利要求 6所述的 AC-DC开关电源， 其特征在于， 该些三极管单元中的一个 受控于该电源管理电路并做主开关用，该些三极管单元中的另一个受控于该电源管理电路 并做启动用。  7. The AC-DC switching power supply according to claim 6, wherein one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the The power management circuit is used for startup.
8、 依据权利要求 6所述的 AC-DC开关电源， 其特征在于， 该些三极管单元中的一个 受控于该电源管理电路并做主开关用，该些三极管单元中的另一个受控于该电源管理电路 并做主开关用单元的驱动饱和度控制用。  8. The AC-DC switching power supply according to claim 6, wherein one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the The power management circuit is used for driving saturation control of the main switching unit.
9、 依据权利要求 6所述的 AC-DC开关电源， 其特征在于， 该些三极管单元中的一个 受控于该电源管理电路并做主开关用，该些三极管单元中的另一个受控于该电源管理电路 并做主开关用单元的前级驱动用。  9. The AC-DC switching power supply according to claim 6, wherein one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the The power management circuit is used as the front stage driver for the main switching unit.
10、依据权利要求 6所述的 AC-DC开关电源， 其特征在于， 该些三极管单元中的一个 受控于该电源管理电路并做主开关用，该些三极管单元中的另一个受控于该电源管理电路 并做启动用，该些三极管单元中的又一个受控于该电源管理电路并做主开关用单元的前级 驱动用。  10. The AC-DC switching power supply according to claim 6, wherein one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the The power management circuit is also used for starting, and another one of the triode units is controlled by the power management circuit and is used for the pre-stage driving of the main switching unit.
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