CN206962792U - A kind of IGBT drive devices - Google Patents
A kind of IGBT drive devices Download PDFInfo
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- CN206962792U CN206962792U CN201720941782.8U CN201720941782U CN206962792U CN 206962792 U CN206962792 U CN 206962792U CN 201720941782 U CN201720941782 U CN 201720941782U CN 206962792 U CN206962792 U CN 206962792U
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- igbt
- intermediate isolating
- feedback signal
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Abstract
The utility model discloses a kind of IGBT drive devices; including drive signal input module, feedback signal output module, intermediate isolating transformer module, gate-drive protection module and power transfer module for accessing dc source or AC power and dc source needed for being converted to; power transfer module, drive signal input module, feedback signal output module are separately positioned on the primary side side of intermediate isolating transformer module; the secondary side of the input connection intermediate isolating transformer module of gate-drive protection module, output end are connected to IGBT switching tubes.The utility model has that simple in construction, required cost is low, compatible can be used in the control system of AC and DC power supply, and good insulation preformance, the advantages that being applicable to hyperbaric environment.
Description
Technical field
It the utility model is related to IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar crystal
Pipe), more particularly to a kind of IGBT drive devices.
Background technology
The compound full-control type power that IGBT is made up of double pole triode BJT and insulating gate type field effect tube MOS is partly led
Body device, have concurrently MOSFET high input impedance and GTR low conduction voltage drop the advantages of, be easy to driving, peak point current capacity
Greatly, automatic shutoff and switching frequency height etc..
IGBT driving is that the pulse of controller output is carried out into power to put as the key technology in IGBT applications
Greatly to drive IGBT, ensure IGBT reliably working.IGBT drive circuit at present, generally all it is directly to use direct current supply side
Formula, and be generally all to consider problems with to realize that IGBT drives:
(1)Appropriate forward and reverse output voltage can be provided, IGBT is reliably turned on and off;
(2)Sufficiently large transient power or transient current can be provided, IGBT is established grid-control electric field rapidly and is turned on
Deng.
(3)So that with input and output time delay as small as possible, to improve operating efficiency;
(4)There can be sufficiently high input and output electrical isolation performance, signal circuit is insulated with gate driving circuit;
(5)There can be sensitive overcurrent protection ability.
Reliable driving can be realized to IGBT using above-mentioned IGBT drive circuit, but do not consider that a variety of of IGBT should
With environmental problem, and for different application environment, it is typically only capable to re-start adaptability design, application flexibility difference and can increases
Application cost.Current above-mentioned IGBT drive circuit may be only available for direct current supply due to directly using direct current supply mode
Control system in, can not be then applicable for the control system of ac power supply method, while IGBT is applied to hyperbaric environment application
When middle, the requirement to IGBT driving protections is higher, and especially for the insulating properties of circuit, but above-mentioned IGBT drive circuit is equal
The insulating requirements of high-voltage applications environment are not considered, by circuit mesolow circuit and high-tension circuit mixed-arrangement, thus when IGBT should
During for hyperbaric environment, can then there is the safety protection problem of insulating properties using above-mentioned traditional IGBT Drive Protecting Circuits.
Utility model content
The technical problems to be solved in the utility model is that:It is new for technical problem existing for prior art, this practicality
Type provide it is a kind of it is simple in construction, required cost is low, compatible can be used in the control system of AC and DC power supply, and insulating properties
Can be good, it is applicable to the IGBT drive devices of hyperbaric environment.
In order to solve the above technical problems, the utility model proposes technical scheme be:
A kind of IGBT drive devices, including drive signal input module, feedback signal output module, intermediate isolating transformer
Module, gate-drive protection module and for accessing dc source or connecing the electricity of AC power and dc source needed for being converted to
Source modular converter, the drive signal input module, feedback signal output module and power transfer module are separately positioned on institute
The primary side side of intermediate isolating transformer module is stated, the input of the gate-drive protection module connects the intermediate isolating transformation
The secondary side of device module, output end are connected to IGBT switching tubes.
As further improvement of the utility model:The power transfer module includes rectification unit and DC-DC is changed
Unit, the rectification unit access dc source or AC power export after carrying out rectification, are exported through the DC-DC converting units
Required DC voltage.
As further improvement of the utility model:The rectification unit is full bridge rectifier;The DC-DC conversions are single
The both ends parallel connection of member is additionally provided with Y capacitance and disturbed with suppression common mode.
As further improvement of the utility model:The feedback signal output module uses programmable logic chip, institute
State programmable logic chip and receive drive signal, fault-signal respectively, export the feedback signal of generation.
As further improvement of the utility model:The gate-drive protection module includes two drive circuits, each
The drive circuit drives an IGBT switching tube respectively.
As further improvement of the utility model:Also include substrate, be in turn divided on the substrate weak electrical loop area,
Intermediate isolating area and forceful electric power loop area, the drive signal input module, feedback signal output module and Power convert mould
Block is arranged on the weak electrical loop area, and the intermediate isolating transformer module is arranged on the intermediate isolating area, and the gate pole drives
The upper and lower part that two drive circuits are separately positioned on the forceful electric power loop area according to specifying Spacing in dynamic protection module.
As further improvement of the utility model:In the forceful electric power loop area of the substrate two drive circuits it
Between opening position offer the first groove.
As further improvement of the utility model:In the drive positioned at upper part in the forceful electric power loop area of the substrate
Move the upside in loop, and/or offer the second groove at the lower position of the driving circuit of lower part.
As further improvement of the utility model:The substrate is multi-layer sheet;It is located at the middle interval in the substrate
Intermediate layer from transformer module secondary side position is also equipped with bus plane and ground.
As further improvement of the utility model:The drive circuit includes the driving resistance being made up of more resistor coupled in parallel
Loop.
Compared with prior art, the utility model has the advantage of:
1)The utility model IGBT drive devices, by the way that drive signal input module, the feedback letter of light current circuit will be used as
Number output module, power transfer module are arranged on the primary side side of intermediate isolating transformer module, and the gate pole as forceful electric power circuit drives
Dynamic protection module is arranged on the secondary side of intermediate isolating transformer module, and primary and secondary side is distant, disclosure satisfy that between isolation
Away from requirement, thus can easily realize insulation, meet the insulating properties requirement under hyperbaric environment, while by setting power supply to turn
Block is changed the mold, goes for the control system of Alternating Current Power Supply, so as to compatible with alternating, the control system environment of direct current supply;
2)The utility model IGBT drive devices, feedback signal output module use programmable logic chip, without changing
External circuit structure, it can realize that Different Logic exports by programmable logic chip, in that context it may be convenient to suitable for different control
System, realize the configurable of feedback signal.
Brief description of the drawings
Fig. 1 is the structural representation of IGBT drive devices in the utility model embodiment.
Fig. 2 is the principle schematic diagram of power transfer module in the utility model embodiment.
Fig. 3 is the principle schematic diagram of feedback signal output module in the utility model embodiment.
Fig. 4 is the specific layout setting structure schematic diagram of IGBT driving board in the utility model embodiment.
Marginal data:1st, drive signal input module;2nd, feedback signal output module;3rd, intermediate isolating transformer module;
4th, gate-drive protection module;5th, power transfer module;6th, the first groove;7th, the second groove;8th, bus plane;9th,;10th, driving electricity
Hinder loop.
Embodiment
The utility model is further described below in conjunction with Figure of description and specific preferred embodiment, but not because
This and limit the scope of protection of the utility model.
As shown in figure 1, the present embodiment IGBT drive devices include number drive signal input module 1, feedback signal output mould
Block 2, intermediate isolating transformer module 3, gate-drive protection module 4 and for accessing dc source or AC power and changing
For the power transfer module 5 of required dc source, drive signal input module 1, feedback signal output module 2 and Power convert
Module 5 is separately positioned on the primary side side of intermediate isolating transformer module 3, and the input connection of gate-drive protection module 4 is middle
The secondary side of isolation transformer module 3, output end are connected to IGBT switching tubes, and gate-drive protection module 4 is specifically with being driven
IGBT G poles, E poles is extremely connected with C.
In the present embodiment, drive signal input module 1 is used for input drive signal, and feedback signal output module 2 is used for defeated
Go out the feedback signal of IGBT switching tube states, intermediate isolating transformer module 3 includes isolating transformer, gate-drive protection module
4 are used for after driving IGBT, the input drive signal of drive signal input module 1 to be handled, and are exported by intermediate isolating transformer
To gate-drive protection module 4, the output driving control signal of gate-drive protection module 4, control IGBT switching tubes cut-off,
The feedback signal of IGBT switching tube states is exported to feedback signal output module 2 by intermediate isolating transformer, passes through feedback letter
Number output feedback signal of output module 2.
Because gate-drive protection module 4 is directly connected with IGBT switching tubes, when applied to high pressure(Such as 3300V)Environment
When, then gate-drive protection module 4 needs to bear highest 3300V voltage, and drive signal input module 1, feedback signal are defeated
The voltage for going out module 2 and power transfer module 5 is relatively low.The present embodiment is by the way that the drive signal for being used as light current circuit is inputted
Module 1, feedback signal output module 2, power transfer module 5 are arranged on the primary side side of intermediate isolating transformer module 3, as strong
The gate-drive protection module 4 of circuit is arranged on the secondary side of intermediate isolating transformer module 3, between primary and secondary side away from
From the requirement that farther out, disclosure satisfy that isolation spacing, thus insulation can be easily realized, meet that the insulating properties under hyperbaric environment is wanted
Ask, while by setting power transfer module 5, go for the control system of Alternating Current Power Supply, so as to compatible with alternating, direct current
The control system environment of power supply.
As shown in Fig. 2 the present embodiment power transfer module 5 includes rectification unit 51 and DC-DC converting units 52, rectification
Unit 51 is exported after accessing dc source or AC power progress rectification, and required direct current is exported through DC-DC converting units 52
Pressure.The present embodiment rectification unit 51 is the full bridge rectifier being made up of 4 diodes, and the both ends of DCDC1 converters are also in parallel
Y capacitance is connected with, can be disturbed with suppression common mode.Using said structure, can be inputted with compatible with alternating, direct current, and nonpolarity limitation,
Using flexible and convenient.
Rectification unit 51 can access AC24V power supplys in the utility model specific embodiment, successively by rectification unit 51,
Stable DC15V power supplys output is converted to after DC-DC converting units 52 so that compatible AC24V Alternating Current Power Supply;Rectification unit
51 can also be directly accessed 10V-36VDC power supplys, be converted to stabilization after rectification unit 51, DC-DC converting units 52 successively
DC15V power supplys output, so as to compatible with alternating, a variety of different power-supply systems of direct current, substantially increase IGBT drive devices
Application flexibility.
In the present embodiment, gate-drive protection module 4 specifically includes two drive circuits, and each drive circuit drives respectively
One IGBT switching tube, so as to drive two IGBT simultaneously.
In the present embodiment, feedback signal output module 2 uses programmable logic chip, and programmable logic chip receives respectively
Drive signal, fault-signal, the feedback signal of generation is exported, i.e., inputted drive signal, fault-signal to feedback signal simultaneously
Output module 2, feedback signal output module 2 generates feedback signal with reference to drive signal, fault-signal, compared to above-mentioned tradition
The single fault-signal of input produce feedback signal, can combine the essence that drive signal improves feedback signal with fault-signal
Degree, so as to accurately characterize IGBT state.Programmable logic chip can specifically use FPGA, CPLD etc..
As shown in figure 3, the driving control signal A/B and fault-signal A/B of two-way drive circuit export to programmable respectively
Logic chip, by exporting two-way feedback signal FoA/FoB after programmable logic chip.Can be square by programmable logic chip
Just the configuration for realizing feedback signal pattern, directly it is set as fixed feedback signal pattern, the present embodiment compared to traditional
External circuit structure need not be changed, can be real by the hardware logic gate array architecture composition changed inside programmable logic chip
Existing Different Logic output, in that context it may be convenient to suitable for different control systems, realize the configurable of feedback signal.
Using the present embodiment said structure IGBT drive devices, using the teaching of the invention it is possible to provide 3300V and following IGBT driving voltage and
Electric current, while compatible direct current, AC power input, and may be such that by programmable logic chip and configure work(with feedback logic
Can, so as to suitable for a variety of different application environments.
As shown in figure 4, the present embodiment IGBT drive devices also include substrate, be in turn divided on substrate weak electrical loop area,
Intermediate isolating area and forceful electric power loop area, drive signal input module 1, feedback signal output module 2 and power transfer module 5
It is arranged on weak electrical loop area, intermediate isolating transformer module 3 is arranged on intermediate isolating area, two in gate-drive protection module 4
Drive circuit is separately positioned on the upper and lower part of forceful electric power loop area according to specifying Spacing.
Due in hyperbaric environment, in electric equipment compartment away from having higher requirement with creep age distance, as IGBT is applied to 3300V
During hyperbaric environment, upper and lower two IGBT voltage difference maximum can reach 3300V, the present embodiment by divide weak electrical loop area,
Intermediate isolating area and forceful electric power loop area, by drive signal input module 1, feedback signal output module 2 and Power convert mould
Block 5 is arranged on the weak electrical loop area of the corresponding primary side side of intermediate isolating transformer module 3, and gate-drive protection module 4 is arranged on
The forceful electric power loop area of the corresponding secondary side of intermediate isolating transformer module 3, due to the distance between primary and secondary side farther out, Ke Yiman
The requirement of foot isolation spacing, thus effectively insulation can be achieved by circuit board, so as to suitable for 3300V and following voltage
IGBT driving, meet insulating properties requirement.
Two drive circuits are upper and lower in gate-drive protection module 4 is arranged on substrate, due under upper, loop spacing compared with
Closely, the creep age distance of circuit board is inadequate, and the present embodiment passes through the position between two drive circuits in the forceful electric power loop area of substrate
The place of putting offers the first groove 6, can increase creep age distance.The first groove of the present embodiment 6 is specially long ellipse, and is opened in secondary
Center, creep age distance can be increased to greatest extent.
When IGBT is applied to such as 3300V hyperbaric environments, because when IGBT works, IGBT E poles and C extremely maximums also may be used
3300V can be reached, the present embodiment in the forceful electric power loop area of substrate by being located at the upside of the driving circuit of upper part and being located at
The second groove 7 is offered at the lower position of the driving circuit of lower part respectively, further increase insulation spacing can be increased, certainly
Can also be according to the actual requirements only under the upside of the driving circuit positioned at upper part or driving circuit positioned at lower part
Side opens up the second groove 7.The second groove of the present embodiment 7 is specially long ellipse, can increase insulation spacing to greatest extent.
If voltage is higher, electric current is bigger, the electromagnetic interference of IGBT switches is stronger, and substrate is specially more in the present embodiment
Laminate, by using multiple sliding cover, electromagnetism interference performance can be improved, further become in multi-layer sheet positioned at intermediate isolating
The intermediate layer of the secondary side position of depressor module 3 is also equipped with bus plane 8 and ground 9, can further enhance antijamming capability.
In the present embodiment, drive circuit specifically includes the driving resistance loop 10 being made up of more resistor coupled in parallel, by multiple
Resistor coupled in parallel realizes different open resistance and shut-off resistance value, goes for the IGBT of different model.
Using the present embodiment said structure, using the teaching of the invention it is possible to provide high pressure 3300V and following IGBT driving voltage and electric current, and it is full
Sufficient main circuit AC5750V 1min insulating requirements, while there is stronger anti-electromagnetic interference capability.
Above-mentioned simply preferred embodiment of the present utility model, not makees any formal limitation to the utility model.Though
Right the utility model is disclosed above with preferred embodiment, but is not limited to the utility model.Therefore, it is every without departing from
The content of technical solutions of the utility model, any simply repaiied to made for any of the above embodiments according to the utility model technical spirit
Change, equivalent variations and modification, all should fall in the range of technical solutions of the utility model protection.
Claims (10)
- A kind of 1. IGBT drive devices, it is characterised in that:Including drive signal input module(1), feedback signal output module (2), intermediate isolating transformer module(3), gate-drive protection module(4)And for accessing dc source or AC power simultaneously The power transfer module of dc source needed for being converted to(5), the drive signal input module(1), feedback signal output module (2)And power transfer module(5)It is separately positioned on the intermediate isolating transformer module(3)Primary side side, the gate pole drives Dynamic protection module(4)Input connect the intermediate isolating transformer module(3)Secondary side, output end is connected to IGBT and opens Guan Guan.
- 2. IGBT drive devices according to claim 1, it is characterised in that:The power transfer module(5)Including mutual The rectification unit of connection(51)And DC-DC converting units(52), the rectification unit(51)Access dc source or alternating current Source exports after carrying out rectification, through the DC-DC converting units(52)DC voltage needed for output.
- 3. IGBT drive devices according to claim 2, it is characterised in that the rectification unit(51)For full-bridge rectification electricity Road;The DC-DC converting units(52)Both ends be also arranged in parallel Y capacitance and disturbed with suppression common mode.
- 4. according to the IGBT drive devices described in claim 1 or 2 or 3, it is characterised in that:The feedback signal output module (2)Using Programmadle logic chip, the programmable logic chip receives drive signal, fault-signal respectively, exports generation Feedback signal.
- 5. according to the IGBT drive devices described in claim 1 or 2 or 3, it is characterised in that:The gate-drive protection module (4)Including two drive circuits, each drive circuit drives an IGBT switching tube respectively.
- 6. IGBT drive devices according to claim 5, it is characterised in that:Also include substrate, drawn successively on the substrate It is divided into weak electrical loop area, intermediate isolating area and forceful electric power loop area, the drive signal input module(1), feedback signal output Module(2)And power transfer module(5)It is arranged on the weak electrical loop area, the intermediate isolating transformer module(3)Set In the intermediate isolating area, the gate-drive protection module(4)In two drive circuits set respectively according to specifying Spacing Put in the upper and lower part of the forceful electric power loop area.
- 7. IGBT drive devices according to claim 6, it is characterised in that:At two in the forceful electric power loop area of the substrate Opening position between the drive circuit offers the first groove(6).
- 8. IGBT drive devices according to claim 7, it is characterised in that:In the forceful electric power loop area of the substrate positioned at The upside of the driving circuit of upper part, and/or offer at the lower position of the driving circuit of lower part Two grooves(7).
- 9. according to the IGBT drive devices described in claim 6 or 7 or 8, it is characterised in that:The substrate is multi-layer sheet;It is described It is located at the intermediate isolating transformer module in multi-layer sheet(3)The intermediate layer of secondary side position is also equipped with bus plane(8)And ground (9).
- 10. according to the IGBT drive devices described in claim 6 or 7 or 8, it is characterised in that:The drive circuit is included by more The driving resistance loop that resistor coupled in parallel is formed(10).
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110994981A (en) * | 2019-11-13 | 2020-04-10 | 江苏弘历电气有限公司 | Non-contact type high-voltage and large-current direct current module |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110994981A (en) * | 2019-11-13 | 2020-04-10 | 江苏弘历电气有限公司 | Non-contact type high-voltage and large-current direct current module |
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