WO2012171342A1 - Alimentation en courant d'interrupteur courant alternatif-courant continu et sa triode de puissance - Google Patents

Alimentation en courant d'interrupteur courant alternatif-courant continu et sa triode de puissance Download PDF

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Publication number
WO2012171342A1
WO2012171342A1 PCT/CN2012/070382 CN2012070382W WO2012171342A1 WO 2012171342 A1 WO2012171342 A1 WO 2012171342A1 CN 2012070382 W CN2012070382 W CN 2012070382W WO 2012171342 A1 WO2012171342 A1 WO 2012171342A1
Authority
WO
WIPO (PCT)
Prior art keywords
triode
management circuit
power supply
power management
power
Prior art date
Application number
PCT/CN2012/070382
Other languages
English (en)
Chinese (zh)
Inventor
郑凌波
林新春
罗小荣
Original Assignee
深圳市力生美半导体器件有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 深圳市力生美半导体器件有限公司 filed Critical 深圳市力生美半导体器件有限公司
Publication of WO2012171342A1 publication Critical patent/WO2012171342A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Definitions

  • the invention relates to a circuit structure of a switching power supply, in particular to a circuit implementation of a switching tube in an AC-DC switching power supply.
  • the source of electronic products is the high-voltage AC power supply on the socket, and all control circuits require low-voltage DC power or battery power supply. Therefore, from the high-voltage AC provided by the power grid to the various low-voltage power supplies required for the operation of electronic products and charging the battery, a conversion circuit from alternating current to low-voltage DC output is required, which is an AC-DC power supply, and the most commonly used AC-DC.
  • the power supply is a high frequency switching power supply.
  • the most basic AC-DC switching power supply is to directly rectify the AC power supply, and output the DC high voltage power supply to the transformer.
  • the transformer controls the change of energy in the transformer through the process of opening and closing the high frequency switch tube, thereby controlling the output of the low voltage DC power supply.
  • the subsequent control circuits of the various parts work.
  • the power management circuit that is, the control chip, is responsible for sampling the input and output of the power supply and the temperature, error amplification, feedback control, and finally controlling the switching process of the switching tube to achieve the required output of the system.
  • the power system specifications require output voltage magnitude, accuracy, output current magnitude and accuracy, output voltage ripple magnitude, conversion efficiency, standby power consumption, output and input isolation requirements that may be required for electrical connections, and Adapt to the range of input voltage, EMI indicators, etc.
  • Safety aspects include over- and under-voltage protection of the input and output voltages, over-temperature protection of the system, and short-circuit protection of the outputs.
  • the power management circuit and its peripheral system coordination work to control the change of power energy by controlling the opening and closing of the switch.
  • the switch tube is the executor of the switching power supply
  • the power management circuit is the controller.
  • the peripheral transformer and other magnetic components and capacitive components constitute the main body of energy conversion. Therefore, the power management circuit and the switch are inseparable in the switching power conversion: some switching power management circuits and switching transistors are used together, and some are combined by working together relatively independent devices.
  • the performance of the switch has a direct impact on the ease of control and the final performance of the system.
  • the components of the switching tube mainly include M0S tubes and triode tubes.
  • the devices used as switching tubes in high-power switching power supplies are mainly M0S tubes, IGBTs, IPM modules, etc.
  • M0S tube and triode are different.
  • the advantage of the triode is that the withstand voltage is easy to be high, which is very important for the safety of the AC-DC switching power supply.
  • the input voltage range is from AC85V to AC380V.
  • the other is the quality of the grid, and the quality of the grid in some backward areas is quite poor.
  • the supplied AC power supply voltage deviation ratio can be more than twice the standard value.
  • the triode has a great advantage.
  • the shortcomings of the triode mainly include: Because it is a current-driven operation, it requires a relatively large operating current during operation, which is difficult to start, requires a large starting current and a longer system startup time; and is relatively large due to the need for a relatively large driving current. Loss; Drive is complicated, because the amplification factor of the triode is discrete, it is difficult to control the proper drive current.
  • the drive If the drive is too large, it will enter the deep saturation conduction state when it is turned on, and the deep saturation drive needs more work. The current will reduce the switching frequency of the triode, which will affect the control accuracy of the switching tube and increase the switching loss of the triode. If the driving is not enough, the system may enter the linear working area, and the switching tube is not fully conductive, which will generate a large Power consumption, and may burn the switch; not suitable for high current switches.
  • the existing AC-DC switching power supply often needs to be equipped with two or more transistors in the power management circuit to realize the corresponding switch control, which not only increases the number of components, but directly Increasing material costs and PCB space will also increase system risk due to the differences in the devices themselves.
  • triode-type switch tube structure it is necessary to improve the existing triode-type switch tube structure, and in the case of giving full play to the advantages of the triode tube withstand voltage being high, the triode drive current can be overcome, the drive is complicated, and the like, and in one wafer Two or more triodes are integrated to meet the requirements of the AC-DC switching power supply in conjunction with the power management circuit under the premise of controlling the cost. Summary of the invention
  • the technical problem to be solved by the present invention is to overcome the deficiencies of the prior art described above, and to provide an AC-DC switching power supply and a power triode structure thereof, which can ensure the performance of the switching power supply under the premise of controlling the cost.
  • the technical solution proposed by the present invention for the above technical problem includes a power transistor of an AC-DC switching power supply, comprising a substrate as a collector, at least two base regions formed on the substrate, An emitter formed on each of the base regions and a collector pin electrically connected to the substrate, at least two base pins electrically connected to the base regions, and at least two electrically connected to the emitters
  • the emitter pins, the substrate, each of the base regions, the emitters on each of the base regions, and the corresponding pins form a triode unit.
  • the current capability of the triode units has at least two specifications.
  • the voltage resistance of the triode units is not lower than a set value.
  • the substrate is made of an N-type semiconductor material, and the base regions are made of a P-type semiconductor material, and the emitters are made of an N-type semiconductor material.
  • the substrate is made of a P-type semiconductor material, and the base regions are made of an N-type semiconductor material, and the emitters are made of a P-type semiconductor material.
  • the technical solution proposed by the present invention for the above technical problem further includes an AC-DC switching power supply, comprising a separate power management circuit and a switch tube electrically connected to the power management circuit, the switch tube having the above power Triode structure.
  • an AC-DC switching power supply comprising a separate power management circuit and a switch tube electrically connected to the power management circuit, the switch tube having the above power Triode structure.
  • one of the triode units is controlled by the power management circuit and serves as a main switch, the other of the triode units being controlled by the power management circuit for startup.
  • one of the triode units is controlled by the power management circuit and serves as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit.
  • Drive saturation control In another preferred embodiment of the present invention, one of the triode units is controlled by the power management circuit and serves as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. Drive saturation control.
  • one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and serves as a main switch unit. For the pre-driver.
  • one of the triode units is controlled by the power management circuit and is used as a main switch, and the other of the triode units is controlled by the power management circuit and is activated. Yet another of the triode units is controlled by the power management circuit and is used as a front stage drive for the main switching unit.
  • the AC-DC switching power supply of the present invention and its power transistor enable flexible driving and control of the triode type switch tube by simultaneously integrating at least two common collector triode units in one package. Therefore, the performance of the switching power supply can be ensured under the premise of controlling the cost.
  • Figure 1 is a schematic view showing the structure of an embodiment of a power transistor of the present invention.
  • the structure of the power transistor embodiment of the AC-DC switching power supply of the present invention generally comprises: a substrate 1 as a collector, and first and second isolated on the substrate 1 which are isolated from each other Base regions 2, 4, first and second emitters 3, 5 respectively formed on the first and second base regions 2, 4, and collector leads electrically connected to the substrate 1 a first base pin B1 electrically connected to the first base region 2, a first emitter pin El electrically connected to the first emitter 3, and a second base region 4 electrically connected a second base pin B2 and a second emitter pin E2 electrically connected to the second emitter 5.
  • Substrate 1, first base region 2, first emitter 3 and corresponding pins (:, Bl El constitutes a first unit.
  • the substrate 1, the second base region 4, the second emitter 5 and the corresponding pins (:, B2, E2 form a second unit.
  • the first unit has a current capacity greater than the first unit
  • the current capability of the two cells, the first cell has a withstand voltage capability that is substantially equivalent to the withstand voltage capability of the second cell.
  • the substrate 1, the base 2, 4 and the emitters 3, 5 are arranged from the bottom to the top in the vertical direction.
  • the substrate 1 is made of an N-type semiconductor, and the bases 2, 4 are made of a P-type semiconductor material, and the emitters 3 and 5 are made of an N-type semiconductor material. Or,
  • the substrate 1 is made of a P-type semiconductor material, and the base electrodes 2 and 4 are made of an N-type semiconductor material, and the emitter electrodes 3 and 5 are made of a P-type semiconductor material.
  • the NPN transistor is composed of two N-type semiconductors and one P-type semiconductor.
  • the P-type semiconductor forms two back-to-back PN junctions with two N-type semiconductors in the middle of two N-type semiconductor materials.
  • the electrodes of the layer material are led out, and the performance of the triode is realized between the three electrodes, and such a structure forms an NPN transistor.
  • the current capability of the triode is proportional to the cross-sectional area of the PN junction, and the first base can be designed.
  • the cross-sectional area of the region 2 is larger than the cross-sectional area of the second base region 4, and the cross-sectional area of the first emitter region 3 is larger than the cross-sectional area of the second emitter region 5.
  • the formed triode has a common collector, two pairs of base or emitters separated from each other, and two or more common collector triode units According to the different area occupied by the base and the emitter, different triodes have different current capabilities, but all have substantially the same withstand voltage index, that is, the withstand voltage capability of each triode unit exceeds a set value. To meet the needs of practical applications.
  • the parameters of each layer of material include the physical concentration, and the thickness and size of the mutual covering materials are controlled.
  • the pad of the extraction electrode, the passivation protective layer, the protective layer of the substrate, and the structure of the ferrite layer in the actual product are not reflected.
  • the power transistor structure of the present invention may be packaged separately or together with a power management circuit.
  • the pin refers to the PAD of the wafer and the metal lead which is formed during the packaging process and the metal lead which is formed after the package is formed and electrically connected to the device.
  • FIG. 2 it is an equivalent diagram of the NPN type power transistor of the present invention. It can be used as a switching tube in AC-DC switching power supply, and it can be matched with the power management circuit to realize flexible driving and control. For example: By starting the second unit with small current, the first unit of high current is the master. For switching, it can save the starting current. By driving the saturation control of the first unit of the small current of the second unit with a small current, the driving current of the triode can be precisely controlled. By switching the control by classification, the driving current can be reduced. The need to improve system efficiency.
  • triode units may be constructed on the same collector, one of the three triode units being controlled by the power management circuit and used as a main switch, and the other being controlled by the power source.
  • the management circuit is used for starting, and another one is controlled by the power management circuit and is used as a pre-stage driving unit for the main switch.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

La présente invention concerne une alimentation en courant d'interrupteur courant alternatif-courant continu et sa triode de puissance. La triode de puissance comprend un substrat (1) comme collecteur, au moins deux zones de base (2, 4) isolées l'une de l'autre et formées sur le substrat, un émetteur (3, 5) formé sur chaque zone de base et une broche collectrice (C) connectée électriquement au substrat, au moins deux broches de base (Bl, B2) connectées électriquement aux zones de base et au moins deux broches émettrices (El, E2) connectées électriquement aux émetteurs et au substrat, chaque zone de base, l'émetteur sur chaque zone de base et les broches correspondantes constituant une unité triode. L'alimentation en courant d'interrupteur courant alternatif-courant continu comprend un circuit de gestion d'alimentation en courant et un tube commutateur connecté électriquement au circuit de gestion d'alimentation en courant, le tube commutateur présentant la structure de la triode de puissance. L'alimentation en courant d'interrupteur courant alternatif-courant continu peut garantir la performance de l'alimentation en courant d'interrupteur sous condition de contrôle des coûts.
PCT/CN2012/070382 2011-06-16 2012-01-16 Alimentation en courant d'interrupteur courant alternatif-courant continu et sa triode de puissance WO2012171342A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110162549.7 2011-06-16
CN2011101625497A CN102222670A (zh) 2011-06-16 2011-06-16 Ac-dc开关电源及其功率三极管

Publications (1)

Publication Number Publication Date
WO2012171342A1 true WO2012171342A1 (fr) 2012-12-20

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CN (1) CN102222670A (fr)
WO (1) WO2012171342A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111063723A (zh) * 2019-11-25 2020-04-24 深圳深爱半导体股份有限公司 开关集成控制器和三极管芯片

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Publication number Priority date Publication date Assignee Title
CN102222670A (zh) * 2011-06-16 2011-10-19 深圳市力生美半导体器件有限公司 Ac-dc开关电源及其功率三极管

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CN202094124U (zh) * 2011-06-16 2011-12-28 深圳市力生美半导体器件有限公司 Ac-dc开关电源及其功率三极管

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US3918083A (en) * 1974-08-22 1975-11-04 Dionics Inc Bilateral switching integrated circuit
CN101141099A (zh) * 2007-10-17 2008-03-12 葛铮 电容降压ac-dc开关电源
CN102222670A (zh) * 2011-06-16 2011-10-19 深圳市力生美半导体器件有限公司 Ac-dc开关电源及其功率三极管
CN202094124U (zh) * 2011-06-16 2011-12-28 深圳市力生美半导体器件有限公司 Ac-dc开关电源及其功率三极管

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111063723A (zh) * 2019-11-25 2020-04-24 深圳深爱半导体股份有限公司 开关集成控制器和三极管芯片
CN111063723B (zh) * 2019-11-25 2021-12-28 深圳深爱半导体股份有限公司 开关集成控制器

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