CN203883669U - High-and-low-side drive integrated circuit and switching power supply - Google Patents
High-and-low-side drive integrated circuit and switching power supply Download PDFInfo
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- CN203883669U CN203883669U CN201420286956.8U CN201420286956U CN203883669U CN 203883669 U CN203883669 U CN 203883669U CN 201420286956 U CN201420286956 U CN 201420286956U CN 203883669 U CN203883669 U CN 203883669U
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- leading foot
- driving chip
- pipe driving
- side drive
- drive integrated
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Abstract
A high-and-low-side drive integrated circuit and a switching power supply are provided. The high-and-low-side drive integrated circuit is used for driving an upper power tube and a lower power tube, and includes a lead frame. The lead frame includes multiple pins. The lead frame further includes two mutually isolated base islands, wherein an upper tube drive chip is disposed on one of the two base islands while a lower tube drive chip is disposed on the other base island. Both the upper tube drive chip and the lower tube drive chip are under the control of a controller. The upper tube drive chip and the lower tube drive chip are electrically connected through a wire. An input end of the upper tube drive chip is connected with a first pin. An upper power tube drive signal output end of the upper tube drive chip is connected with a third pin. An input end of the lower tube drive chip is connected with the first pin and a second pin. A lower power tube drive signal output end of the lower tube drive chip is connected with a fourth pin. Process cost and difficulty are effectively reduced while the high-and-low-side drive integrated circuit completely realizes functions and performance of a similar chip from abroad.
Description
Technical field
The utility model relates to drive integrated circult, relates in particular to a kind of high-low side drive integrated circult and Switching Power Supply.
Background technology
In the Switching Power Supply of half-bridge or full bridge structure, need to drive control to power tube, so that power tube energy driving transformer or inductance complete required power delivery work, but be limited to the connected mode of power tube, the power tube (hereinafter to be referred as upper pipe) that is positioned at ungrounded end often needs the circuit of particular design to drive it, especially when system works is during at higher voltage conditions, to the requirement of drive circuit, also will become higher, conventional type of drive has several as follows traditionally:
Refer to Fig. 1, by controller, driven the armature winding of a transformer, secondary winding by two opposite polarities of transformer drives respectively upper power tube Q1 and lower power tube Q2 again, at each primary current conversion direction, alternately open power tube Q1 and lower power tube Q2, realize required switch drive and control.This mode principle is simple, but also need to consider during actual use power tube reverse grid protection, turn-off fast, the problem such as door clamper, transformer needs high pressure isolation ratio more expensive simultaneously, cause holistic cost comparatively high, and volume is also larger.
Typical half-bridge drive circuit of the prior art is used the high-low side Switching Power Supply (as driven chip I R2101 etc.) of business-like IC regime to drive, by add an integrated circuit with high pressure isolating power between controller and power tube, this IC interior has two independent driving passages, can be respectively used to the driving to upper power tube Q1 and lower power tube Q2, between two drive circuits, there is required high-voltage isolating ability simultaneously, thereby realize required isolation drive.The high-low side Switching Power Supply of this IC regime is peripheral simple, uses easy to connectly, and comprehensive advantage is comparatively outstanding.But the Switching Power Supply of IC regime requires to have high voltage isolation capabilities between two inner drive circuits, usually need to be up to the voltage isolation capabilities of 400V in the system of standard power grid application, this has proposed very high challenge to making the semiconductor technology of this circuit.
For above-mentioned problem, prior art puts forward a solution, referring to application number is 201010224392.1, patent name is: a kind of application documents of bridge drive circuit chip, it by arranging three isolation and insulation Ji islands mutually on the encapsulating face of lead frame, San Geji island has at least one connecting pin separately, by connecting pin Jiang Ji island and leading foot, couple together, low-pressure side Drive and Control Circuit chip and level shifter chip are arranged on first Ji Dao, the first power device is arranged on the second Ge Ji island, high-pressure side Drive and Control Circuit chip and the second power device are arranged on San Geji island, and connection between each device all realizes by plain conductor, realize bridge drive circuit function.When so just driving can be realized, also avoided adopting the trouble of high pressure isolation manufacturing process.But this scheme is encapsulated in upper power tube and lower power tube in same chip, and be provided with San Geji island, such manufacturing process is very complicated.
Utility model content
The technical problems to be solved in the utility model is to overcome above-mentioned the problems of the prior art, and proposes a kind of high-low side drive integrated circult and Switching Power Supply, can solve the high-low side driver complex manufacturing technology of high pressure single-chip and problem with high costs.
For solving the problems of the technologies described above, the utility model proposes a kind of high-low side drive integrated circult, it is for driving upper power tube and lower power tube, it comprises lead frame, lead frame comprises a plurality of leading foots, leading foot at least comprises the first leading foot, the second leading foot, the 3rd leading foot and the 4th leading foot, wherein, the first leading foot and the second leading foot all connect controller, the 3rd leading foot connects the control end of upper power tube, the 4th leading foot connects the control end of lower power tube, lead frame also comprises two isolation Ji islands mutually, one of them Ji Dao is provided with pipe driving chip, another Ji Dao is provided with lower pipe driving chip, upper pipe driving chip and lower pipe driving chip are all controlled by controller, upper pipe driving chip is realized and being electrically connected to by wire with lower pipe driving chip, the upper power tube of upper pipe driving chip drives signal output part to connect the 3rd leading foot, the input of lower pipe driving chip connects the first leading foot and the second leading foot, the lower power tube of lower pipe driving chip drives signal output part to connect the 4th leading foot.
Preferably, lead frame is 8 pin lead frames, and 8 pin lead frames also comprise the 5th leading foot, the 6th leading foot, the 7th leading foot and the 8th leading foot; Upper pipe driving chip connects the 5th leading foot, the 7th leading foot and the 8th leading foot, and lower pipe driving chip connects the 5th leading foot and the 6th leading foot.
Preferably, lower pipe driving chip comprises logic processing module, lower pipe driver module and signal output module, logic processing module connects this first leading foot and the second leading foot, lower pipe driver module connects logic processing module and the 4th leading foot, and signal output module is connected between logic processing module and wire.
Preferably, lower pipe driving chip also comprises a high-voltage diode, and its negative pole connects the 8th leading foot, its anodal the 6th leading foot that connects.
Preferably, upper pipe driving chip comprises signal input module and upper pipe driver module, and signal input module connects wire, and upper pipe driven management module is connected between signal input module and the 3rd leading foot.
Preferably, upper pipe driving chip is the low pressure chip of withstand voltage scope below 40V.
Preferably, lower pipe driving chip is that withstand voltage scope is at the high pressure chip of 40V to 1500V.
Preferably, signal output module comprises the first high-voltage tube and the second high-voltage tube, and the control end of the first high-voltage tube and the second high-voltage tube connects logic processing module, and the output of the first high-voltage tube and the second high-voltage tube connects wire.
Preferably, the withstand voltage scope of the first high-voltage tube and the second high-voltage tube is at 40V to 1500V.
The present invention also proposes a kind of Switching Power Supply, and it comprises above-mentioned high-low side drive integrated circult.
Compared with prior art, the beneficial effects of the utility model comprise: the utility model by realizing above-mentioned integrated circuit structure under simple process conditions, by two completely independently chip complete respectively top tube and down tube and drive, two drive chip to realize interconnected an encapsulation inside, only need simple high voltage drain technique to realize, thereby on can semiconductor technology platform at home, realize function and the performance of external similar chip completely, and effectively reduce process costs and difficulty, in addition, with respect to application number, be 201010224392.1, patent name is: a kind of application documents of bridge drive circuit chip, it adopts Liang Geji island to distinguish integrated upper pipe driving chip and lower pipe driving chip, and upper power tube and lower power tube are not integrated in encapsulating face, manufacturing process is more simple like this, encapsulation is also convenient, result of use is better.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the bridge drive circuit of prior art.
Fig. 2 is the encapsulation schematic diagram of the utility model high-low side drive integrated circult.
Wherein, description of reference numerals is as follows: power tube Q2 capacitor C 1 high-voltage diode ZD2 wire 13 first leading foot HIN the second leading foot LIN the 3rd leading foot HO the 4th leading foot LO the 5th leading foot VCC the 6th leading foot GND the 7th leading foot VB the 8th leading foot VS under the upper power tube Q1 of 12 times, pipe driving chip 111Ji island pipe driving chip 121 voltage stabilizing didoe ZD1 on 8 pin lead frame 1 base islands 11.
Embodiment
In order to further illustrate principle of the present utility model and structure, now by reference to the accompanying drawings preferred embodiment of the present utility model is elaborated.
Refer to Fig. 2, a kind of high-low side drive integrated circult of the present invention, it is for driving upper power tube and lower power tube, and it comprises lead frame, and lead frame includes a plurality of leading foots.Leading foot at least comprises the first leading foot HIN, the second leading foot LIN, the 3rd leading foot HO and the 4th leading foot LO.Wherein, the first leading foot HIN and the second leading foot LIN all connect controller, the control end of power tube in the 3rd leading foot HO connection, and the 4th leading foot LO connects the control end of lower power tube.On encapsulating face, be provided with two isolation Ji islands mutually, one of them Ji Dao is provided with pipe driving chip, and another Ji Dao is provided with lower pipe driving chip.Upper pipe driving chip and lower pipe driving chip are all controlled by controller, upper pipe driving chip is realized and being electrically connected to by wire with lower pipe driving chip, the upper power tube of upper pipe driving chip drives signal output part to connect the 3rd leading foot HO, the input of lower pipe driving chip connects the second leading foot LIN, and the lower power tube of lower pipe driving chip drives signal output part to connect the 4th leading foot LO of lower power tube.
Please continue to refer to Fig. 2, high-low side drive integrated circult of the present invention adopts 8 pin lead frames 1, and this 8 pin lead frame 1 comprises: the first leading foot HIN, the second leading foot LIN, the 3rd leading foot HO, the 4th leading foot LO, the 5th leading foot VCC, the 6th leading foot GND, the 7th leading foot VB and the 8th leading foot VS.This 8 pin lead frame 1 also comprises two isolation Ji islands mutually, and one of them base island 11 is provided with pipe driving chip 111, and another base island 12 is provided with lower pipe driving chip 121.The first leading foot HIN and the second leading foot LIN all connect controller.The 3rd leading foot HO and the 4th leading foot LO connect respectively the control end of power tube Q1 and lower power tube Q2.After power supply VCC connection voltage stabilizing didoe ZD1, to the 7th leading foot VB of 8 pin lead frames 1, between the 7th leading foot VB and the 8th leading foot VS, be connected with capacitor C 1, the six leading foot GND ground connection.Upper pipe driving chip 111 connects the 7th leading foot VB, the 3rd leading foot HO and the 8th leading foot VS.Lower pipe driving chip 121 connects the first leading foot HIN, the second leading foot LIN, the 5th leading foot VCC, the 6th leading foot GND and the 4th leading foot LO.Upper pipe driving chip 111 is realized and being electrically connected to by wire 13 with lower pipe driving chip 121.This 8 pin lead frame 1 is applicable to drive chip I R2101.In the present embodiment, this 8 pin lead frame 1 can be DIP8.In other embodiments, this 8 pin lead frame 1 is SOP8.
Lower pipe driving chip 121 comprises: logic processing module, lower pipe driver module, signal output module and high-voltage diode ZD2.Logic processing module connects this first leading foot HIN and the second leading foot LIN, and lower pipe driver module connects logic processing module and the 4th leading foot LO, and signal output module is connected between logic processing module and wire 13.The negative pole of this high-voltage diode ZD2 connects the 8th leading foot VS, its anodal the 6th leading foot GND that connects.In the present embodiment, lower pipe driving chip 121 is that withstand voltage scope is at the high pressure chip of 20V to 1000V.In other embodiments, this high-voltage diode ZD2 can not be integrated in this lower pipe driving chip 121, directly in the periphery of this high-low side drive integrated circult, realizes and connecting.By add a reverse high-voltage diode ZD2 between the 8th leading foot VS to the six leading foot GND, can carry out negative voltage clamper, play the effect of protection.
Wherein, signal output module comprises the first high-voltage tube (not shown) and the second high-voltage tube (not shown) in parallel.The control end of the first high-voltage tube and the second high-voltage tube connects described logic processing module, and the output of the first high-voltage tube and the second high-voltage tube connects wire 13.
In the present embodiment, the withstand voltage scope of the first high-voltage tube and the second high-voltage tube is at 40V to 1500V.
In the present embodiment, upper power tube Q1 and lower power tube Q2 are metal-oxide-semiconductor.
Upper pipe driving chip 111 comprises signal input module and upper pipe driver module.Signal input module connects wire 13, and upper pipe driven management module is connected between signal input module and the 3rd leading foot HO.In the present embodiment, upper pipe driving chip 111 is the low pressure chip of withstand voltage scope below 40V.
In the present embodiment, upper power tube Q1 and lower power tube Q2 are metal-oxide-semiconductor, the grid of metal-oxide-semiconductor is the control end of upper power tube Q1 and lower power tube Q2, the source electrode of metal-oxide-semiconductor is the input of upper power tube Q1 and lower power tube Q2, and the drain electrode of metal-oxide-semiconductor is the output of upper power tube Q1 and lower power tube Q2.
In other embodiments, upper power tube Q1 and lower power tube Q2 are triode, the base stage of triode is the control end of upper power tube Q1 and lower power tube Q2, the current collection of triode is very gone up the input of power tube Q1 and lower power tube Q2, and the output of power tube Q1 and lower power tube Q2 is very gone up in the transmitting of triode.
In the present embodiment, the withstand voltage scope of upper power tube Q1 and lower power tube Q2 is at 40V to 1500V.
Implication, the number of leading foot, the connected mode of the shape of each leading foot and each leading foot that it should be noted that the leading foot representative on this encapsulating face are not here restricted, and can arrange according to actual conditions.High-low side drive integrated circult is not limited to 8 pin encapsulation in embodiment, can adopt the lead frame of existing any maturation to realize, and the thick film circuit that also can make multi-chip form, can also directly be welded on these chips and device on pcb board.
The present invention also proposes a kind of Switching Power Supply, and it comprises above-mentioned high-low side drive integrated circult.
Compared with prior art, the beneficial effects of the utility model comprise: the utility model by realizing above-mentioned integrated circuit structure under simple process conditions, by two completely independently chip complete respectively top tube and down tube and drive, two drive chip to realize interconnected an encapsulation inside, only need simple high voltage drain technique to realize, thereby on can semiconductor technology platform at home, realize function and the performance of external similar chip completely, and effectively reduce process costs, in addition, with respect to application number, be 201010224392.1, patent name is: a kind of application documents of bridge drive circuit chip, it adopts Liang Geji island to distinguish integrated upper pipe driving chip and lower pipe driving chip, and upper power tube and lower power tube are not integrated in encapsulating face, manufacturing process is more simple like this, encapsulation is also convenient, result of use is better.
The foregoing is only better possible embodiments of the present utility model, and unrestricted protection range of the present utility model.The equivalent structure that all utilization the utility model specifications and accompanying drawing content have been done changes, and is all included in protection range of the present utility model.
Claims (1)
1. a high-low side drive integrated circult, it is for driving upper power tube and lower power tube, it comprises lead frame, described lead frame comprises a plurality of leading foots, described leading foot at least comprises the first leading foot, the second leading foot, the 3rd leading foot and the 4th leading foot, wherein, described the first leading foot and the second leading foot all connect controller, described the 3rd leading foot connects the control end of described upper power tube, described the 4th leading foot connects the control end of described lower power tube, it is characterized in that, described lead frame also comprises two isolation Ji islands mutually, described in one of them, Ji Dao is provided with pipe driving chip, described in another, Ji Dao is provided with lower pipe driving chip, described upper pipe driving chip and lower pipe driving chip are all controlled by described controller, described upper pipe driving chip is realized and being electrically connected to by wire with described lower pipe driving chip, the upper power tube of described upper pipe driving chip drives signal output part to connect described the 3rd leading foot, the input of described lower pipe driving chip connects described the first leading foot and the second leading foot, the lower power tube of described lower pipe driving chip drives signal output part to connect described the 4th leading foot.
2. high-low side drive integrated circult as claimed in claim 1, is characterized in that, described lead frame is 8 pin lead frames, and described 8 pin lead frames also comprise the 5th leading foot, the 6th leading foot, the 7th leading foot and the 8th leading foot; Described upper pipe driving chip connects described the 5th leading foot, the 7th leading foot and the 8th leading foot, and described lower pipe driving chip connects described the 5th leading foot and described the 6th leading foot.
3. high-low side drive integrated circult as claimed in claim 1, it is characterized in that, described lower pipe driving chip comprises logic processing module, lower pipe driver module and signal output module, described logic processing module connects this first leading foot and the second leading foot, described lower pipe driver module connects described logic processing module and the 4th leading foot, and described signal output module is connected between described logic processing module and wire.
4. high-low side drive integrated circult as claimed in claim 2, is characterized in that, described lower pipe driving chip also comprises a high-voltage diode, and its negative pole connects described the 8th leading foot, described the 6th leading foot of its anodal connection.
5. high-low side drive integrated circult as claimed in claim 1, it is characterized in that, described upper pipe driving chip comprises signal input module and upper pipe driver module, described signal input module connects described wire, and described upper pipe driven management module is connected between described signal input module and the 3rd leading foot.
6. high-low side drive integrated circult as claimed in claim 1, is characterized in that, described upper pipe driving chip is the low pressure chip of withstand voltage scope below 40V.
7. high-low side drive integrated circult as claimed in claim 1, is characterized in that, described lower pipe driving chip is that withstand voltage scope is at the high pressure chip of 40V to 1500V.
8. high-low side drive integrated circult as claimed in claim 3, it is characterized in that, described signal output module comprises the first high-voltage tube and the second high-voltage tube, the control end of described the first high-voltage tube and the second high-voltage tube connects described logic processing module, and the output of described the first high-voltage tube and the second high-voltage tube connects described wire.
9. high-low side drive integrated circult as claimed in claim 8, is characterized in that, the withstand voltage scope of described the first high-voltage tube and the second high-voltage tube is at 40V to 1500V.
10. a Switching Power Supply, is characterized in that, it comprises the high-low side drive integrated circult as described in claim 1 to 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420286956.8U CN203883669U (en) | 2014-05-30 | 2014-05-30 | High-and-low-side drive integrated circuit and switching power supply |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420286956.8U CN203883669U (en) | 2014-05-30 | 2014-05-30 | High-and-low-side drive integrated circuit and switching power supply |
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| CN203883669U true CN203883669U (en) | 2014-10-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104821817A (en) * | 2015-05-21 | 2015-08-05 | 苏州锴威特半导体有限公司 | Isolation packaging architecture for half-bridge driving circuit |
| CN110600464A (en) * | 2019-08-22 | 2019-12-20 | 宜宾市叙芯半导体有限公司 | Multiple DIE isolated transmission integrated circuit |
-
2014
- 2014-05-30 CN CN201420286956.8U patent/CN203883669U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104821817A (en) * | 2015-05-21 | 2015-08-05 | 苏州锴威特半导体有限公司 | Isolation packaging architecture for half-bridge driving circuit |
| CN110600464A (en) * | 2019-08-22 | 2019-12-20 | 宜宾市叙芯半导体有限公司 | Multiple DIE isolated transmission integrated circuit |
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Address after: 518000, Shenzhen, Guangdong Province, Nanshan District science and technology road, 1, SED science and technology building on the south side of the 10 floor, block A Patentee after: SHENZHEN LII SEMICONDUCTOR CO., LTD. Address before: 518000, Shenzhen, Guangdong, Shenzhen, Nanshan District science and technology road, No. 1, SED science and technology building, 10, South East Side A room Patentee before: Shenzhen Lishengmei Semiconductor Deveces Co., Ltd. |