CN201323560Y - High-capacity switch driving circuit - Google Patents
High-capacity switch driving circuit Download PDFInfo
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- CN201323560Y CN201323560Y CNU2008201451450U CN200820145145U CN201323560Y CN 201323560 Y CN201323560 Y CN 201323560Y CN U2008201451450 U CNU2008201451450 U CN U2008201451450U CN 200820145145 U CN200820145145 U CN 200820145145U CN 201323560 Y CN201323560 Y CN 201323560Y
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Abstract
The utility model relates to a high-capacity switch driving circuit and is characterized in that: the high-capacity switch driving circuit comprises a phase inverter 1 circuit and phase inverter 2 circuit used for serving the functions of signal shaping and phase reversal, a circuit consisting of a transistor PMOS1 and a transistor PMOS2 and used for outputting a driving signal, and a high-voltage switching circuit to be driven; and alternately the high-capacity switch driving circuit comprises a phase inverter 1 circuit used for serving the functions of signal shaping and phase reversal, a circuit consisting of a transistor PMOS1 and a transistor PMOS2 and used for outputting a driving signal, and a high-voltage switching circuit to be driven. The high-capacity switch driving circuit has the advantages of less parts consumption, simple structure, easy implementation, less occupied area of the chip, high driving velocity of the circuit, low power consumption and high operating reliability of the switch. Additionally, the maximum voltage of the power source 2 with respect to the ground is set to be less than the grid voltage endurance of the high-voltage switch, so as to protect the grid of the high-voltage driving switch from being damaged due to the large change of the supply voltage range.
Description
(1) technical field:
The utility model relates to a kind of switch driving circuit, especially a kind of big capacity switch driving circuit.
(2) background technology:
At present, aspect the driving circuit structure of inner or outside high pressure that connects of circuit or big capacity switch, following several form is arranged:
(1) the direct drive circuit of form 1 inverter as shown in Figure 1, directly use the output signal of inverter 2 or level shifting circuit LVS to drive high-voltage switch gear, like this when the change of the voltage range between power supply 1 and the public ground is very big, for the grid that prevents to be driven switch breakdown, therefore the gate withstand voltage of required switching device or built-in switch designs require very high, cause on market, the alternative variation of device or the difficulty of design being increased, or can't realize at all, influence the whole cost of circuit;
(2) form 2 constant current source and resistance clamper drive circuit as shown in Figure 2, using constant current source to connect diverter switch is connected with resistance, because it is certain to decide the product of electric current and resistance, therefore ohmically magnitude of voltage is also certain, can not damage the grid of high-voltage switch gear, but in order to reduce power consumption, usually the current value of constant current source is very little, voltage is certain substantially, resistance value then must be very big, causes actuating speed very slow, can't satisfy the high-speed driving requirement of high-voltage switch gear, and often have power consumption to produce, increase power consumption;
(3) form 3 additional clamper drive circuit as shown in Figure 3 uses constant current source to connect diverter switch, but does not need terminal relatively; Identical with Fig. 1, because the regulation of line voltage of output signal is very big, need to connect clamp voltage circuit between power supply 2 and the lead-out terminal, between lead-out terminal and public ground, also needing to connect a following clamp voltage circuit, controlling the fluctuation range of output signal voltage; Although this circuit can be realized high-speed driving, because the complex structure of upper and lower clamp voltage circuit causes circuit area to increase, cost raises; Also because the moment that output signal changes has fluctuation range greatly, long-term use meeting also can produce deterioration to the grid of high drive switch, reduces its useful life, even misoperation occurs; Identical with form 2, often there is power consumption to produce, increase power consumption.
(3) utility model content:
The purpose of this utility model is to provide a kind of big capacity switch driving circuit, it is the gate driving and the control circuit of a kind of outside or internal switch, sort circuit has and uses device few, the characteristics that are easy to realize simple in structure, the actuating speed of circuit is fast, and is low in energy consumption, the reliable in action height of switch, and can not cause the grid of switch to damage because the variation of supply voltage scope is excessive, avoid corresponding circuit defect.
The technical solution of the utility model: a kind of big capacity switch driving circuit is characterized in that it comprises the inverter 1 of realizing signal shaping and inverter functionality and inverter 2 circuit, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 and inverter 2 is connected with power supply 1 respectively, and the ground terminal of inverter 1 and inverter 2 is connected respectively with publicly; The input terminal receiving inputted signal of said inverter 1, its lead-out terminal is connected with the input terminal of inverter 2 and the grid of transistor PMOS1; The lead-out terminal of said inverter 2 is connected with the grid of transistor PMOS2; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, and drain electrode is connected with the input of high voltage switch circuit; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, and its grid is connected with the lead-out terminal of inverter 2, and drain electrode is connected with terminal relatively.
Above-mentioned said big capacity switch driving circuit also comprises the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input terminal receiving inputted signal of said level shifting circuit LVS, its lead-out terminal is connected with the input terminal of inverter 1, power supply terminal is connected with power supply 1, the ground terminal be connected publicly.
A kind of big capacity switch driving circuit is characterized in that it comprises inverter 1 circuit of realizing signal shaping and inverter functionality, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 is connected with power supply 1, the ground terminal be connected publicly; The direct receiving inputted signal of the grid of the input terminal of said inverter 1 and transistor PMOS2; The lead-out terminal of said inverter 1 is connected with the grid of transistor PMOS1; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, drain then with input be connected; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, its grid receiving inputted signal, and drain electrode is connected with terminal relatively.
Above-mentioned said a kind of big capacity switch driving circuit, it can also comprise the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input receiving inputted signal of said level shifting circuit LVS, its lead-out terminal connect the input terminal of inverter 1 and the grid of transistor PMOS2 respectively, and power supply terminal is connected with power supply 1, the ground terminal be connected publicly.
Above-mentioned said relatively be between power supply 1 and public ground, determine a magnitude of voltage according to the gate withstand voltage value of high-voltage switch gear.
A kind of application of big capacity switch driving circuit is characterized in that it is applicable to that the signal to various varying input signal voltage ranges carries out level conversion and export meeting the driving circuit device that high-voltage switch gear gate withstand voltage value requires in many power circuit systems.
Operation principle of the present utility model is: between power supply 1 and public ground, determine of the relatively use of a magnitude of voltage according to the gate withstand voltage value of high-voltage switch gear as power supply 2, since power supply 2 relatively between maximum voltage value be set at gate withstand voltage value less than high-voltage switch gear, therefore the grid of high drive switch can breakdownly not damage, or cause the grid deterioration, influence its useful life.Because what the grid of two transistor PMOS of the circuit of the output drive signal of transistor PMOS1 and transistor PMOS2 formation was connected respectively is mutual anti-phase signal, when transistor PMOS1 was conducting state, transistor PMOS2 then was a closed condition.Otherwise when transistor PMOS1 was closed condition, transistor PMOS2 then was a conducting state.Therefore, output signal has bigger driving force, and the high speed that can realize signal transmits and to the high-speed driving of high-voltage switch gear, and can not destroy the grid of high-voltage switch gear.
Superiority of the present utility model is: 1, circuit of the present utility model uses device few, and simple in structure being easy to realizes that it is little that it takies area of chip, and the actuating speed of circuit is fast, and is low in energy consumption, the reliable in action height of switch; 2,, make the grid of high drive switch can not cause the grid damage of switch because the variation of supply voltage scope is excessive because power supply 2 is set at gate withstand voltage value less than high-voltage switch gear with maximum voltage value relatively; 3, be adapted at application in many power circuit systems,, carry out level conversion, and output meets the driving circuit device that high-voltage switch gear gate withstand voltage value requires the signal of various varying input signal voltage ranges.
(4) description of drawings:
Fig. 1 is the circuit structure diagram of the direct drive circuit of inverter in the prior art.
Fig. 2 is the circuit structure diagram of constant current source and resistance clamper drive circuit in the prior art.
Fig. 3 is the circuit structure diagram of additional clamper drive circuit in the prior art.
Fig. 4 is the circuit structure diagram of a kind of embodiment of the related a kind of big capacity switch driving circuit of the utility model.
Fig. 5 is the circuit structure diagram of the another kind of embodiment of the related a kind of big capacity switch driving circuit of the utility model.
Fig. 6 is the transmission characteristic figure of the input/output signal of the related a kind of big capacity switch driving circuit of the utility model.
(5) embodiment:
Embodiment 1: a kind of big capacity switch driving circuit (see figure 4) is characterized in that it comprises the inverter 1 of realizing signal shaping and inverter functionality and inverter 2 circuit, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 and inverter 2 is connected with power supply 1 respectively, and the ground terminal of inverter 1 and inverter 2 is connected respectively with publicly; The input terminal receiving inputted signal of said inverter 1, its lead-out terminal is connected with the input terminal of inverter 2 and the grid of transistor PMOS1; The lead-out terminal of said inverter 2 is connected with the grid of transistor PMOS2; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, and drain electrode is connected with the input of high voltage switch circuit; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, and its grid is connected with the lead-out terminal of inverter 2, and drain electrode is connected with terminal relatively.
Above-mentioned said big capacity switch driving circuit also comprises the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input terminal receiving inputted signal of said level shifting circuit LVS, its lead-out terminal is connected with the input terminal of inverter 1, power supply terminal is connected with power supply 1, the ground terminal be connected publicly.(see figure 4)
Above-mentioned said relatively be between power supply 1 and public ground, determine a magnitude of voltage according to the gate withstand voltage value of high-voltage switch gear.
A kind of application of big capacity switch driving circuit is characterized in that it is applicable to that the signal to various varying input signal voltage ranges carries out level conversion and export meeting the driving circuit device that high-voltage switch gear gate withstand voltage value requires in many power circuit systems.
Embodiment 2: a kind of big capacity switch driving circuit (see figure 5) is characterized in that it comprises inverter 1 circuit of realizing signal shaping and inverter functionality, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 is connected with power supply 1, the ground terminal be connected publicly; The direct receiving inputted signal of the grid of the input terminal of said inverter 1 and transistor PMOS2; The lead-out terminal of said inverter 1 is connected with the grid of transistor PMOS1; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, drain then with input be connected; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, its grid receiving inputted signal, and drain electrode is connected with terminal relatively.
Above-mentioned said a kind of big capacity switch driving circuit, it can also comprise the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input receiving inputted signal of said level shifting circuit LVS, its lead-out terminal connect the input terminal of inverter 1 and the grid of transistor PMOS2 respectively, and power supply terminal is connected with power supply 1, the ground terminal be connected publicly.(see figure 5)
Above-mentioned said relatively be between power supply 1 and public ground, determine a magnitude of voltage according to the gate withstand voltage value of high-voltage switch gear.
A kind of application of big capacity switch driving circuit is characterized in that it is applicable to that the signal to various varying input signal voltage ranges carries out level conversion and export meeting the driving circuit device that high-voltage switch gear gate withstand voltage value requires in many power circuit systems.
The utility model is compared with the prior art:
Transmission characteristic by the input/output signal of the present utility model of the foregoing description and Fig. 6 shows, the related circuit of the utility model is compared with normally used circuit, the high speed that both can realize signal transmits and high-speed driving, there is not power consumption often yet, can be widely used in the various multi-power system circuit as driving circuit section, to reducing the circuit system cost, the reduction circuit power consumption, satisfy low power dissipation design, all have remarkable advantages.
Claims (5)
1, a kind of big capacity switch driving circuit is characterized in that it comprises the inverter 1 of realizing signal shaping and inverter functionality and inverter 2 circuit, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 and inverter 2 is connected with power supply 1 respectively, and the ground terminal of inverter 1 and inverter 2 is connected respectively with publicly; The input terminal receiving inputted signal of said inverter 1, its lead-out terminal is connected with the input terminal of inverter 2 and the grid of transistor PMOS1; The lead-out terminal of said inverter 2 is connected with the grid of transistor PMOS2; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, and drain electrode is connected with the input of high voltage switch circuit; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, and its grid is connected with the lead-out terminal of inverter 2, and drain electrode is connected with terminal relatively.
2, according to the said a kind of big capacity switch driving circuit of claim 1, it is characterized in that said big capacity switch driving circuit, also comprise the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input terminal receiving inputted signal of said level shifting circuit LVS, its lead-out terminal is connected with the input terminal of inverter 1, power supply terminal is connected with power supply 1, the ground terminal be connected publicly.
3, a kind of big capacity switch driving circuit is characterized in that it comprises inverter 1 circuit of realizing signal shaping and inverter functionality, the circuit of the output drive signal that is made of transistor PMOS1 and transistor PMOS2 and the high voltage switch circuit of needs driving; Wherein, the power supply terminal of said inverter 1 is connected with power supply 1, the ground terminal be connected publicly; The direct receiving inputted signal of the grid of the input terminal of said inverter 1 and transistor PMOS2; The lead-out terminal of said inverter 1 is connected with the grid of transistor PMOS1; In the circuit of the output drive signal that said transistor PMOS1 and transistor PMOS2 constitute, the source electrode of transistor PMOS1 is connected with power supply 2 respectively with trap, and its grid is connected with the lead-out terminal of inverter 1, drain then with input be connected; The source electrode of said transistor PMOS2 is connected with the input of high voltage switch circuit respectively with trap, its grid receiving inputted signal, and drain electrode is connected with terminal relatively.
4, according to the said a kind of big capacity switch driving circuit of claim 3, it is characterized in that said a kind of big capacity switch driving circuit, it can also comprise the level shifting circuit LVS that realizes the output of low voltage signal input high voltage signal; The input receiving inputted signal of said level shifting circuit LVS, its lead-out terminal connect the input terminal of inverter 1 and the grid of transistor PMOS2 respectively, and power supply terminal is connected with power supply 1, the ground terminal be connected publicly.
5, according to claim 1 or 3 said a kind of big capacity switch driving circuits, it is characterized in that said relatively is between power supply 1 and public ground, determines a magnitude of voltage according to the gate withstand voltage value of high-voltage switch gear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201451450U CN201323560Y (en) | 2008-12-30 | 2008-12-30 | High-capacity switch driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201451450U CN201323560Y (en) | 2008-12-30 | 2008-12-30 | High-capacity switch driving circuit |
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| Publication Number | Publication Date |
|---|---|
| CN201323560Y true CN201323560Y (en) | 2009-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2008201451450U Expired - Fee Related CN201323560Y (en) | 2008-12-30 | 2008-12-30 | High-capacity switch driving circuit |
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| CN (1) | CN201323560Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522829A (en) * | 2011-12-28 | 2012-06-27 | 苏州大学 | Power supply management circuit |
| CN103633979A (en) * | 2012-08-27 | 2014-03-12 | 朗捷科技股份有限公司 | High voltage driving switch capable of being integrated into integrated circuit |
| CN109672439A (en) * | 2019-01-17 | 2019-04-23 | 南京观海微电子有限公司 | Pressure-resistant level shifting circuit |
-
2008
- 2008-12-30 CN CNU2008201451450U patent/CN201323560Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522829A (en) * | 2011-12-28 | 2012-06-27 | 苏州大学 | Power supply management circuit |
| CN102522829B (en) * | 2011-12-28 | 2014-02-26 | 苏州大学 | Power supply management circuit |
| CN103633979A (en) * | 2012-08-27 | 2014-03-12 | 朗捷科技股份有限公司 | High voltage driving switch capable of being integrated into integrated circuit |
| CN109672439A (en) * | 2019-01-17 | 2019-04-23 | 南京观海微电子有限公司 | Pressure-resistant level shifting circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20131230 |