CN201699675U - Grid drive circuit for controlling bridge-type drive circuit - Google Patents
Grid drive circuit for controlling bridge-type drive circuit Download PDFInfo
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- CN201699675U CN201699675U CN2010202530029U CN201020253002U CN201699675U CN 201699675 U CN201699675 U CN 201699675U CN 2010202530029 U CN2010202530029 U CN 2010202530029U CN 201020253002 U CN201020253002 U CN 201020253002U CN 201699675 U CN201699675 U CN 201699675U
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Abstract
The utility model discloses a grid drive circuit for controlling a bridge-type drive circuit, which comprises a low-voltage side control chip and a high-voltage side control chip produced through adopting CMOS (Complementary Metal Oxide Semiconductor) techniques, and a level transfer chip produced through adopting high-voltage isolating manufacturing techniques, wherein the low-voltage side control chip is mainly integrated by a control logic module and a low-voltage side driver module; the level transfer chip is mainly integrated by a level transfer module; and the high-voltage side control chip is mainly integrated by a high-voltage side driver module. The grid drive circuit has the advantage that each single chip integrated into the modules is divided into three chips. Only the level transfer module is produced through adopting high-voltage isolating manufacturing techniques, while the control logic module, the low-voltage side driver module and the high-voltage side driver module are all produced through adopting CMOS techniques, and the grid drive circuit is encapsulated into an integrated circuit. Compared with the conventional grid driver chip, the complexity of the techniques is lowered, the chip area is reduced, the manufacturing cost is lowered, and more complex circuit can be designed conveniently.
Description
Technical field
The utility model relates to a kind of drive circuit, especially relates to a kind of gate driver circuit that is used to control bridge drive circuit.
Background technology
Bridge drive circuit is a kind of common application circuit in the field of switch power, bridge drive circuit generally comprises half-bridge drive circuit and full bridge driving circuit, two half-bridge drive circuits can be combined into a full bridge driving circuit, and bridge drive circuit often is applied on this series products of electric ballast.Fig. 1 has provided the schematic diagram of the half-bridge drive circuit of typical employing prior art, this half-bridge drive circuit comprises first power device 10, second power device 20 and a control chip are grid drive chip 30, first power device 10 is as on high-tension side power device, second power device 20 is as the power device of low-pressure side, grid drive chip 30 is called for short the grid chip for driving, it is the control chip of bridge drive circuit, according to Module Division, this grid chip for driving generally can be divided into control logic module 31, low-pressure side driver module 32, level shifts (level-shift) module 33 and high-pressure side driver module 34, the major function of control logic module 31 produces control signal control low-pressure side driver module 32 and level shift module 33 etc. exactly, first signal output port of control logic module 31 is connected with the signal input port of low-pressure side driver module 32, the drive signal output port of low-pressure side driver module 32 is connected to the signal controlling port of second power device 20, utilize the drive signal LO that exports to control the on off state of second power device 20, the secondary signal output port of control logic module 31 is connected with the signal input port of level shift module 33, the signal output port of level shift module 33 is connected with the signal input port of high-pressure side driver module 34, the drive signal output port of high-pressure side driver module 34 is connected to the signal controlling port of first power device 10, utilizes the drive signal HO that exports to control the on off state of first power device 10.Wherein, first power device 10 and second power device 20 can be power MOSFET (Metal Oxide Semiconductor FieldEffect Transistor, mos field effect transistor), the grid of power MOSFET tube is the signal controlling port, also can adopt the power device of other type, as IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), thyristor etc., wherein with the grid of IGBT as the signal controlling port, with the gate pole of thyristor as the signal controlling port.
In existing the application, normally adopt the single-chip integrated approach that these four modules of control logic module, low-pressure side driver module, level shift module and high-pressure side driver module are integrated in the integrated circuit, on the one hand, adopt the integrated a plurality of modules of this single-chip integrated approach to realize that the grid drive chip utmost point is unfavorable for production control; On the other hand, high pressure need be isolated manufacturing process when manufacturing grid drive chip is integrated in the common CMOS technology and produces, the purpose that adopts high pressure to isolate manufacturing process is for high-pressure side driver module and control logic module, the low-pressure side driver module is kept apart, because common CMOS technology integrated high voltage is isolated the manufacturing process flow complexity, this technology is for high pressure resistant, the characteristic size that can reach is bigger, originally only need the part of small-feature-size also must adopt large-feature-size, make the characteristic size of making the grid drive chip that obtains bigger, thereby caused the grid drive chip area occupied of identical function too big, improved single production cost of chip simultaneously; In addition, because the area of the grid drive chip that employing single-chip integrated approach is realized is bigger, the chip that is unfavorable for the design function complexity like this, this is because the area of chip of this grid drive chip design function complexity of employing will be very big, may cannot encapsulate, can cause the process conditions complexity simultaneously, process conditions complexity, chip area are crossed big city to cause producing yield lower, increase chip cost indirectly.
Summary of the invention
It is less that technical problem to be solved in the utility model provides a kind of area, do not need integrated high voltage to isolate manufacturing process, and cost is lower, and help designing the complicated more circuit of performance or the gate driver circuit that is used to control bridge drive circuit of chip.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: a kind of gate driver circuit that is used to control bridge drive circuit, comprise the low-pressure side control chip and the high-pressure side control chip that adopt the CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shifts chip, described low-pressure side control chip is mainly integrated by control logic module and low-pressure side driver module, first signal output port of described control logic module is connected with the signal input port of described low-pressure side driver module, it is mainly integrated by the level shift module that described level shifts chip, described high-pressure side control chip is mainly integrated by the high-pressure side driver module, described low-pressure side control chip has a low-pressure side drive signal output pin that is connected with the low-pressure side drive signal output port of described low-pressure side driver module and one group of output signal control pin that is connected with the secondary signal output port of described control logic module, described level shifts chip and has one group of input signal control pin that is connected with the signal input port of described level shift module and one group of output signal control pin that is connected with the signal output port of described level shift module, described high-pressure side control chip has one group of input signal control a pin and a high-pressure side drive signal output pin that is connected with the high-pressure side drive signal output port of described high-pressure side driver module of being connected with the signal input port of described high-pressure side driver module, the low-pressure side drive signal output pin of described low-pressure side control chip is used for connecting the signal controlling port of power device of the low-pressure side of bridge drive circuit, the input signal control pin that the output signal control pin and the described level of described low-pressure side control chip shifts chip is connected, the output signal control pin that described level shifts chip is controlled pin with the input signal of described high-pressure side control chip and is connected, and the high-pressure side drive signal output pin of described high-pressure side control chip is used for connecting the signal controlling port of the on high-tension side power device of bridge drive circuit.
The high pressure range of bearing between the output signal control pin that the input signal control pin of described level transfer chip and described level shift chip is 400～1000V.
Described level shift module comprises at least one high voltage bearing LDMOS pipe, and the grid of described LDMOS pipe is as the signal input port of described level shift module, and the drain electrode of described LDMOS pipe is as the signal output port of described level shift module.
Compared with prior art, advantage of the present utility model is integrated control logic module, the low-pressure side driver module, the single-chip of level shift module and high-pressure side driver module is divided into the low-pressure side control chip, level shifts chip and the high-pressure side control chip is realized, adopt complicated high pressure to isolate manufacturing process technology and only produce the level shift module, and for control logic module, low-pressure side driver module and high-pressure side driver module then adopt common CMOS technology to produce, and need not to adopt in common CMOS technology integrated high voltage to isolate each chip of fabrication process, three chips are connected formation gate driver circuit in aggregates, realized the gate driving function, only produced a very little level shift module owing to adopt complicated high pressure to isolate manufacturing process technology on the one hand, and the line construction of level shift module is comparatively simple, therefore the single chip level transfer area of chip of integrated relatively all modules is very little, the process of manufacture that makes level shift chip is more prone to control, more help improving yield, on the other hand owing to adopt common CMOS explained hereafter control logic module, low-pressure side driver module and high-pressure side driver module, the process conditions of common CMOS technology are simple, technology maturation, characteristic line is less, can effectively guarantee to have very high yield, and save cost.This gate driver circuit of the present utility model can be packaged into an integrated circuit, compare with existing grid drive chip, effectively reduce the complexity of production technology, reduced chip area, reduced production cost, and help designing the complicated more circuit of performance, the production control and the yield that help complicated technology improve.
Description of drawings
Fig. 1 is the schematic diagram of typical half-bridge drive circuit;
Fig. 2 is the connection diagram of gate driver circuit of the present utility model;
Fig. 3 is the port schematic diagram of the LDMOS pipe in the level shift module;
Fig. 4 drives the waveform schematic diagram of the drive signal of on high-tension side power device for the waveform and being used to of drive signal of power device that is used to drive low-pressure side of grid drive chip or circuit output.
Embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
As shown in Figure 2, a kind of gate driver circuit that is used to control bridge drive circuit, comprise the low-pressure side control chip 60 and the high-pressure side control chip 80 that adopt common CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shifts chip 70, low-pressure side control chip 60 is mainly integrated by control logic module 605 and low-pressure side driver module 606, first signal output port of control logic module 605 is connected with the signal input port of low-pressure side driver module 606, it is mainly integrated by level shift module 705 that level shifts chip 70, high-pressure side control chip 80 is mainly integrated by high-pressure side driver module 805, low-pressure side control chip 60 has a low-pressure side drive signal output pin 601 that is connected with the low-pressure side drive signal output port of low-pressure side driver module 606 and one group of output signal control pin 602 that is connected with the secondary signal output port of control logic module 605, level shifts chip 70 and has one group of input signal control pin 701 that is connected with the signal input port of level shift module 705 and one group of output signal control pin 702 that is connected with the signal output port of level shift module 705, high-pressure side control chip 80 has one group of input signal control a pin 801 and a high-pressure side drive signal output pin 802 that is connected with the high-pressure side drive signal output port of high-pressure side driver module 805 of being connected with the signal input port of high-pressure side driver module 805, the signal controlling port of the low-pressure side drive signal output pin 601 of low-pressure side control chip 60 power device 50 by the low-pressure side in plain conductor and the bridge drive circuit in application is connected, the drive signal LO of low-pressure side is provided for the power device of low-pressure side, the output signal control pin 602 of low-pressure side control chip 60 is connected by the input signal control pin 701 that plain conductor and level shift chip 70, the output signal control pin 702 that level shifts chip 70 is connected with the input signal control pin 801 of high-pressure side control chip 80 by plain conductor, the high-pressure side drive signal output pin 802 of high-pressure side control chip 80 is connected by the signal controlling port of the on high-tension side power device 40 in plain conductor and the bridge drive circuit in application, on high-tension side power device provides on high-tension side drive signal HO.At this, there is incidence relation between the on high-tension side drive signal HO of the drive signal LO of the low-pressure side of low-pressure side drive signal output pin 601 outputs of low-pressure side control chip 60 and high-pressure side drive signal output pin 802 outputs of high-pressure side control chip 80, the drive signal LO of low-pressure side and on high-tension side drive signal HO form the output waveform of typical grid drive chip or circuit, as shown in Figure 4, high level alternately appears in the drive signal LO of low-pressure side and on high-tension side drive signal HO after operate as normal, between both high level, exist one both be all low level Dead Time DT (DeadTime).
In this specific embodiment, level shift module 705 comprises one or more high voltage bearing LDMOS (LateralDouble Diffused Metal Oxide Semiconductor) pipe, the schematic diagram of three ports of LDMOS pipe as shown in Figure 3, the grid of LDMOS pipe is as the signal input port of level shift module 705, the drain electrode of LDMOS pipe is as the signal output port of level shift module 705, between the grid G and drain D of LDMOS pipe, can both bear the high pressure of 400～1000V between drain D and the source S, so level shifts the input signal control pin 701 of chip 70 and the output signal of level transfer chip 70 is controlled the high pressure that can bear 400～1000V between the pin 702.In the actual design process, level shift module 705 generally is made up of one or two LDMOS pipes, when forming by two LDMOS pipes, the source electrode and the substrate of two LDMOS pipes link together, the signal of two output signal control pins, 602 outputs of low-pressure side control chip 60 is controlled the grid of two LDMOS pipes respectively, the drain electrode of two LDMOS pipes forms two signal output ports, is connected with two output signals control pins 702 of level transfer chip 70 respectively.
In this specific embodiment, control logic module 605, low-pressure side driver module 606, high-pressure side driver module 805 all adopt prior art, and the annexation between control logic module 605 and the low-pressure side driver module 606 also adopts prior art.
In this specific embodiment, the power device 50 and the on high-tension side power device 40 of low-pressure side all adopt prior art, as adopting mos field effect transistor, insulated gate bipolar transistor (IGBT), thyristor constant power device, when adopting mos field effect transistor, its grid is the signal controlling port; When adopting insulated gate bipolar transistor (IGBT), its grid is the signal controlling port; When adopting thyristor, its gate pole is the signal controlling port.
When practical application gate driver circuit of the present utility model, can this gate driver circuit be packaged into an integrated circuit by the mode of multicore sheet encapsulation single integrated circuit; Also can be assembled into thick film circuit by the multicore sheet; Low-pressure side control chip in the gate driver circuit of the present utility model, level transfer chip and high-pressure side control chip directly can also be welded on and form the function that an integral body is finished the grid driving on the pcb board.
Claims (3)
1. gate driver circuit that is used to control bridge drive circuit, it is characterized in that comprising low-pressure side control chip and the high-pressure side control chip that adopts the CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shifts chip, described low-pressure side control chip is mainly integrated by control logic module and low-pressure side driver module, first signal output port of described control logic module is connected with the signal input port of described low-pressure side driver module, it is mainly integrated by the level shift module that described level shifts chip, described high-pressure side control chip is mainly integrated by the high-pressure side driver module, described low-pressure side control chip has a low-pressure side drive signal output pin that is connected with the low-pressure side drive signal output port of described low-pressure side driver module and one group of output signal control pin that is connected with the secondary signal output port of described control logic module, described level shifts chip and has one group of input signal control pin that is connected with the signal input port of described level shift module and one group of output signal control pin that is connected with the signal output port of described level shift module, described high-pressure side control chip has one group of input signal control a pin and a high-pressure side drive signal output pin that is connected with the high-pressure side drive signal output port of described high-pressure side driver module of being connected with the signal input port of described high-pressure side driver module, the low-pressure side drive signal output pin of described low-pressure side control chip is used for connecting the signal controlling port of power device of the low-pressure side of bridge drive circuit, the input signal control pin that the output signal control pin and the described level of described low-pressure side control chip shifts chip is connected, the output signal control pin that described level shifts chip is controlled pin with the input signal of described high-pressure side control chip and is connected, and the high-pressure side drive signal output pin of described high-pressure side control chip is used for connecting the signal controlling port of the on high-tension side power device of bridge drive circuit.
2. a kind of gate driver circuit that is used to control bridge drive circuit according to claim 1 is characterized in that it is 400～1000V that the input signal control pin of described level transfer chip and the output signal that described level shifts chip are controlled the high pressure range of bearing between the pin.
3. a kind of gate driver circuit that is used to control bridge drive circuit according to claim 2, it is characterized in that described level shift module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is as the signal input port of described level shift module, and the drain electrode of described LDMOS pipe is as the signal output port of described level shift module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202530029U CN201699675U (en) | 2010-07-02 | 2010-07-02 | Grid drive circuit for controlling bridge-type drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202530029U CN201699675U (en) | 2010-07-02 | 2010-07-02 | Grid drive circuit for controlling bridge-type drive circuit |
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| Publication Number | Publication Date |
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| CN201699675U true CN201699675U (en) | 2011-01-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202530029U Expired - Lifetime CN201699675U (en) | 2010-07-02 | 2010-07-02 | Grid drive circuit for controlling bridge-type drive circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895190A (en) * | 2010-07-02 | 2010-11-24 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge type drive circuit |
| CN103001616A (en) * | 2011-09-14 | 2013-03-27 | 三菱电机株式会社 | Semiconductor device |
| WO2017143998A1 (en) * | 2016-02-24 | 2017-08-31 | 比亚迪股份有限公司 | Transistor driving circuit |
| WO2022047795A1 (en) * | 2020-09-07 | 2022-03-10 | 深圳市汇顶科技股份有限公司 | Buck switching power supply, electronic device, and control method |
-
2010
- 2010-07-02 CN CN2010202530029U patent/CN201699675U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895190A (en) * | 2010-07-02 | 2010-11-24 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge type drive circuit |
| CN101895190B (en) * | 2010-07-02 | 2012-09-05 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge type drive circuit |
| CN103001616A (en) * | 2011-09-14 | 2013-03-27 | 三菱电机株式会社 | Semiconductor device |
| WO2017143998A1 (en) * | 2016-02-24 | 2017-08-31 | 比亚迪股份有限公司 | Transistor driving circuit |
| US10574224B2 (en) | 2016-02-24 | 2020-02-25 | Byd Company Limited | Drive circuit of transistor |
| WO2022047795A1 (en) * | 2020-09-07 | 2022-03-10 | 深圳市汇顶科技股份有限公司 | Buck switching power supply, electronic device, and control method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110105 Effective date of abandoning: 20120905 |