CN101895190B - Grid drive circuit for controlling bridge type drive circuit - Google Patents
Grid drive circuit for controlling bridge type drive circuit Download PDFInfo
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- CN101895190B CN101895190B CN2010102221975A CN201010222197A CN101895190B CN 101895190 B CN101895190 B CN 101895190B CN 2010102221975 A CN2010102221975 A CN 2010102221975A CN 201010222197 A CN201010222197 A CN 201010222197A CN 101895190 B CN101895190 B CN 101895190B
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Abstract
The invention discloses a grid drive circuit for controlling a bridge type drive circuit. The grid drive circuit comprises a low-voltage side control chip, a high-voltage side control chip and a level shifting chip, wherein the low-voltage side control chip and the high-voltage side control chip are produced by adopting a complementary metal oxide semiconductor (CMOS) process; the level shifting chip is produced by a high-voltage isolation manufacturing process; the low-voltage side control chip is mainly integrated by a control logical module and a low-voltage side drive module; the level shifting chip is mainly integrated by a level shifting module; and the high-voltage side control chip is mainly integrated by a high-voltage side drive module. The grid drive circuit has the advantages that: singlechips for integrating all the modules are realized by being divided into three chips, the level shifting module is produced only by adopting the high-voltage isolation manufacturing process, and the control logical module, the low-voltage side drive module and the high-voltage side drive module are produced by adopting the CMOS process; and the grid drive circuit is encapsulated into an integrated circuit, so compared with the conventional grid drive chip, the complexity of the production process is reduced, the chip area is reduced, the production cost is reduced, and a circuit with more complicated properties can be designed favorably.
Description
Technical field
The present invention relates to a kind of drive circuit, especially relate to a kind of gate driver circuit that is used to control bridge drive circuit.
Background technology
Bridge drive circuit is a kind of common application circuit in the field of switch power; Bridge drive circuit generally comprises half-bridge drive circuit and full bridge driving circuit; Two half-bridge drive circuits can be combined into a full bridge driving circuit, and bridge drive circuit often is applied on this series products of electric ballast.Fig. 1 has provided the schematic diagram of the half-bridge drive circuit of typical employing prior art; This half-bridge drive circuit comprises that first power device 10, second power device 20 and a control chip are grid drive chip 30; First power device 10 is as on high-tension side power device; Second power device 20 is as the power device of low-pressure side; Grid drive chip 30 is called for short the grid chip for driving; It is the control chip of bridge drive circuit, and according to Module Division, this grid chip for driving generally can be divided into control logic module 31, low-pressure side driver module 32, level transfer (level-shift) module 33 and high-pressure side driver module 34; The major function of control logic module 31 produces control signal control low-pressure side driver module 32 and level shift module 33 etc. exactly; First signal output port of control logic module 31 is connected with the signal input port of low-pressure side driver module 32, and the drive signal output port of low-pressure side driver module 32 is connected to the signal controlling port of second power device 20, utilizes the drive signal LO that exports to control the on off state of second power device 20; The secondary signal output port of control logic module 31 is connected with the signal input port of level shift module 33; The signal output port of level shift module 33 is connected with the signal input port of high-pressure side driver module 34, and the drive signal output port of high-pressure side driver module 34 is connected to the signal controlling port of first power device 10, utilizes the drive signal HO that exports to control the on off state of first power device 10.Wherein, First power device 10 and second power device 20 can be power MOSFET (Metal Oxide Semiconductor FieldEffect Transistor; Mos field effect transistor), the grid of power MOSFET tube is the signal controlling port, also can adopt the power device of other type; Like IGBT (Insulated Gate Bipolar Transistor; Insulated gate bipolar transistor), thyristor etc., wherein with the grid of IGBT as the signal controlling port, with the gate pole of thyristor as the signal controlling port.
In existing the application; Normally adopt the single-chip integrated approach that these four modules of control logic module, low-pressure side driver module, level shift module and high-pressure side driver module are integrated in the integrated circuit; On the one hand, adopt the integrated a plurality of modules of this single-chip integrated approach to realize that the grid drive chip utmost point is unfavorable for production control; On the other hand; When manufacturing grid drive chip, need high pressure be isolated manufacturing process is integrated in the common CMOS technology and produces; The purpose that adopts high pressure to isolate manufacturing process is for high-pressure side driver module and control logic module, low-pressure side driver module are kept apart; Manufacturing process flow is complicated because common CMOS technology integrated high voltage is isolated, and this technology is for high pressure resistant, and the characteristic size that can reach is bigger; Originally only need the part of small-feature-size also must adopt large-feature-size; Make the characteristic size of making the grid drive chip that obtains bigger, thereby caused the grid drive chip area occupied of identical function too big, improved single production cost of chip simultaneously; In addition; Because the area of the grid drive chip that employing single-chip integrated approach is realized is bigger, is unfavorable for the chip that design function is complicated like this, this is will be very big because of the area of chip that adopts this grid drive chip design function complicacy; Possibly cannot encapsulate; Can cause process conditions complicated simultaneously, process conditions are complicated, chip area is crossed big city to cause producing yield lower, increase chip cost indirectly.
Summary of the invention
It is less that technical problem to be solved by this invention provides a kind of area, do not need integrated high voltage to isolate manufacturing process, and cost is lower, and help designing the performance gate driver circuit that is used to control bridge drive circuit of complicated circuitry or chip more.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of gate driver circuit that is used to control bridge drive circuit; Comprise that low-pressure side control chip and the high-pressure side control chip that adopts the CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shift chip; Described low-pressure side control chip is mainly integrated by control logic module and low-pressure side driver module; First signal output port of described control logic module is connected with the signal input port of described low-pressure side driver module; It is mainly integrated by the level shift module that described level shifts chip; Described high-pressure side control chip is mainly integrated by the high-pressure side driver module; Described low-pressure side control chip has a low-pressure side drive signal output pin that is connected with the low-pressure side drive signal output port of described low-pressure side driver module and one group of output signal controlling pin that is connected with the secondary signal output port of described control logic module; Described level shifts chip and has one group of input signal control pin and one group of output signal controlling pin that is connected with the signal output port of described level shift module that is connected with the signal input port of described level shift module; Described high-pressure side control chip has one group of input signal control a pin and a high-pressure side drive signal output pin that is connected with the high-pressure side drive signal output port of described high-pressure side driver module of being connected with the signal input port of described high-pressure side driver module; The low-pressure side drive signal output pin of described low-pressure side control chip is used for connecting the signal controlling port of power device of the low-pressure side of bridge drive circuit; The output signal controlling pin of described low-pressure side control chip is connected with the input signal control pin that described level shifts chip; The output signal controlling pin that described level shifts chip is controlled pin with the input signal of described high-pressure side control chip and is connected, and the high-pressure side drive signal output pin of described high-pressure side control chip is used for connecting the signal controlling port of the on high-tension side power device of bridge drive circuit.
It is 400～1000V that the input signal control pin of described level transfer chip and described level shift the high pressure range of bearing between the output signal controlling pin of chip.
Described level shift module comprises at least one high voltage bearing LDMOS pipe, and the grid of described LDMOS pipe is as the signal input port of described level shift module, and the drain electrode of described LDMOS pipe is as the signal output port of described level shift module.
Compared with prior art; The invention has the advantages that single-chip with integrated control logic module, low-pressure side driver module, level shift module and high-pressure side driver module is divided into the low-pressure side control chip, level shifts chip and the high-pressure side control chip is realized; Adopt complicated high pressure to isolate manufacturing process technology and only produce the level shift module; Then adopt common CMOS technology to produce for control logic module, low-pressure side driver module and high-pressure side driver module, and need not to be employed in each chip of integrated high voltage isolation fabrication process in the common CMOS technology, three chips are connected formation gate driver circuit in aggregates; Realized the gate driving function; Only produced a very little level shift module owing to adopting complicated high pressure to isolate manufacturing process technology on the one hand, and the line construction of level shift module is comparatively simple, therefore the single chip level transfer area of chip of integrated relatively all modules is very little; The process of manufacture that makes level shift chip is more prone to control; More help improving yield, on the other hand owing to adopt common CMOS explained hereafter control logic module, low-pressure side driver module and high-pressure side driver module, the process conditions of common CMOS technology are simple, technology maturation, characteristic line are less; Can effectively guarantee to have very high yield, and save cost.This gate driver circuit of the present invention can be packaged into an integrated circuit; Compare with existing grid drive chip; Effectively reduce the complexity of production technology, reduced chip area, reduced production cost; And help designing performance complicated circuitry more, the production control and the yield that help complicated technology improve.
Description of drawings
Fig. 1 is the schematic diagram of typical half-bridge drive circuit;
Fig. 2 is the connection sketch map of gate driver circuit of the present invention;
Fig. 3 is the port sketch map of the LDMOS pipe in the level shift module;
Fig. 4 is waveform and the waveform sketch map of the drive signal that is used to drive on high-tension side power device of drive signal of power device that is used to drive low-pressure side of grid drive chip or circuit output.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
As shown in Figure 2; A kind of gate driver circuit that is used to control bridge drive circuit; Comprise that low-pressure side control chip 60 and the high-pressure side control chip 80 that adopts common CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shift chip 70; Low-pressure side control chip 60 is mainly integrated by control logic module 605 and low-pressure side driver module 606; First signal output port of control logic module 605 is connected with the signal input port of low-pressure side driver module 606; It is mainly integrated by level shift module 705 that level shifts chip 70; High-pressure side control chip 80 is mainly integrated by high-pressure side driver module 805; Low-pressure side control chip 60 has a low-pressure side drive signal output pin 601 that is connected with the low-pressure side drive signal output port of low-pressure side driver module 606 and one group of output signal controlling pin 602 that is connected with the secondary signal output port of control logic module 605; Level shifts chip 70 and has one group of input signal control pin 701 and one group of output signal controlling pin 702 that is connected with the signal output port of level shift module 705 that is connected with the signal input port of level shift module 705; High-pressure side control chip 80 has one group of input signal control a pin 801 and a high-pressure side drive signal output pin 802 that is connected with the high-pressure side drive signal output port of high-pressure side driver module 805 of being connected with the signal input port of high-pressure side driver module 805; The signal controlling port of the low-pressure side drive signal output pin 601 of low-pressure side control chip 60 power device 50 through the low-pressure side in plain conductor and the bridge drive circuit in application is connected; The drive signal LO of low-pressure side is provided for the power device of low-pressure side; The output signal controlling pin 602 of low-pressure side control chip 60 is connected through the input signal control pin 701 that plain conductor and level shift chip 70; The output signal controlling pin 702 that level shifts chip 70 is connected with the input signal control pin 801 of high-pressure side control chip 80 through plain conductor; The high-pressure side drive signal output pin 802 of high-pressure side control chip 80 is connected through the signal controlling port of the on high-tension side power device 40 in plain conductor and the bridge drive circuit in application, on high-tension side power device provides on high-tension side drive signal HO.At this; There is incidence relation between the on high-tension side drive signal HO of the drive signal LO of the low-pressure side of low-pressure side drive signal output pin 601 outputs of low-pressure side control chip 60 and high-pressure side drive signal output pin 802 outputs of high-pressure side control chip 80; The drive signal LO of low-pressure side and on high-tension side drive signal HO form the output waveform of typical grid drive chip or circuit; As shown in Figure 4; High level alternately appears in the drive signal LO of low-pressure side and on high-tension side drive signal HO after operate as normal, between both high level, exist one both be all low level Dead Time DT (DeadTime).
In this specific embodiment; Level shift module 705 comprises one or more high voltage bearing LDMOS (LateralDouble Diffused Metal Oxide Semiconductor) pipe; The sketch map of three ports of LDMOS pipe is as shown in Figure 3; The grid of LDMOS pipe is as the signal input port of level shift module 705; The drain electrode of LDMOS pipe is as the signal output port of level shift module 705; Between the grid G and drain D of LDMOS pipe, can both bear the high pressure of 400～1000V between drain D and the source S, so can bear the high pressure of 400～1000V between the output signal controlling pin 702 of the level input signal control pin 701 that shifts chip 70 and level transfer chip 70.In the actual design process; Level shift module 705 generally is made up of one or two LDMOS pipes; When being made up of two LDMOS pipes, the source electrode and the substrate of two LDMOS pipes link together, and the signal of two output signal controlling pins, 602 outputs of low-pressure side control chip 60 is controlled the grid of two LDMOS pipes respectively; The drain electrode of two LDMOS pipes forms two signal output ports, is connected with two output signal controlling pins 702 of level transfer chip 70 respectively.
In this specific embodiment, control logic module 605, low-pressure side driver module 606, high-pressure side driver module 805 all adopt prior art, and the annexation between control logic module 605 and the low-pressure side driver module 606 also adopts prior art.
In this specific embodiment; The power device 50 and the on high-tension side power device 40 of low-pressure side all adopt prior art; As can adopt mos field effect transistor, insulated gate bipolar transistor (IGBT), thyristor constant power device; When adopting mos field effect transistor, its grid is the signal controlling port; When adopting insulated gate bipolar transistor (IGBT), its grid is the signal controlling port; When adopting thyristor, its gate pole is the signal controlling port.
When practical application gate driver circuit of the present invention, can this gate driver circuit be packaged into an integrated circuit through the mode of multicore sheet encapsulation single integrated circuit; Also can be assembled into thick film circuit through the multicore sheet; Can also the low-pressure side control chip in the gate driver circuit of the present invention, level transfer chip and high-pressure side control chip directly be welded on and form the function that an integral body is accomplished the grid driving on the pcb board.
Claims (3)
1. gate driver circuit that is used to control bridge drive circuit; It is characterized in that comprising that low-pressure side control chip and the high-pressure side control chip that adopts the CMOS explained hereafter, the level that adopts high pressure to isolate fabrication process shift chip; Described low-pressure side control chip is mainly integrated by control logic module and low-pressure side driver module; First signal output port of described control logic module is connected with the signal input port of described low-pressure side driver module; It is mainly integrated by the level shift module that described level shifts chip; Described high-pressure side control chip is mainly integrated by the high-pressure side driver module; Described low-pressure side control chip has a low-pressure side drive signal output pin that is connected with the low-pressure side drive signal output port of described low-pressure side driver module and one group of output signal controlling pin that is connected with the secondary signal output port of described control logic module; Described level shifts chip and has one group of input signal control pin and one group of output signal controlling pin that is connected with the signal output port of described level shift module that is connected with the signal input port of described level shift module; Described high-pressure side control chip has one group of input signal control a pin and a high-pressure side drive signal output pin that is connected with the high-pressure side drive signal output port of described high-pressure side driver module of being connected with the signal input port of described high-pressure side driver module; The low-pressure side drive signal output pin of described low-pressure side control chip is used for connecting the signal controlling port of power device of the low-pressure side of bridge drive circuit; The output signal controlling pin of described low-pressure side control chip is connected with the input signal control pin that described level shifts chip; The output signal controlling pin that described level shifts chip is controlled pin with the input signal of described high-pressure side control chip and is connected, and the high-pressure side drive signal output pin of described high-pressure side control chip is used for connecting the signal controlling port of the on high-tension side power device of bridge drive circuit.
2. a kind of gate driver circuit that is used to control bridge drive circuit according to claim 1 is characterized in that it is 400～1000V that input signal control pin and described level that described level shifts chip shift the high pressure range of bearing between the output signal controlling pin of chip.
3. a kind of gate driver circuit that is used to control bridge drive circuit according to claim 2; It is characterized in that described level shift module comprises at least one high voltage bearing LDMOS pipe; The grid of described LDMOS pipe is as the signal input port of described level shift module, and the drain electrode of described LDMOS pipe is as the signal output port of described level shift module.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102221975A CN101895190B (en) | 2010-07-02 | 2010-07-02 | Grid drive circuit for controlling bridge type drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102221975A CN101895190B (en) | 2010-07-02 | 2010-07-02 | Grid drive circuit for controlling bridge type drive circuit |
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| CN101895190B true CN101895190B (en) | 2012-09-05 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102120089B (en) * | 2011-01-11 | 2012-11-21 | 张有利 | Single-chip CMOS (complementary metal oxide semiconductor) digital/analog mixture and power drive integrated circuit |
| CN102208865B (en) * | 2011-05-31 | 2013-09-11 | 日银Imp微电子有限公司 | Bridge-driven IPM (intelligent power module) circuit for three-phase electric machine |
| CN102231594A (en) * | 2011-07-12 | 2011-11-02 | 顺德职业技术学院 | Drive circuit for preventing oscillation of grid drive signals |
| CN103280949B (en) * | 2011-07-20 | 2015-04-29 | 日银Imp微电子有限公司 | Intelligent power module for three-phase bridge type drive |
| CN102291003B (en) * | 2011-07-20 | 2013-09-11 | 日银Imp微电子有限公司 | Intelligent power module for three-phase bridge type drive |
| US8390327B1 (en) * | 2011-08-19 | 2013-03-05 | Texas Instruments Incorporated | Radiation-tolerant level shifting |
| US8791723B2 (en) * | 2012-08-17 | 2014-07-29 | Alpha And Omega Semiconductor Incorporated | Three-dimensional high voltage gate driver integrated circuit |
| JP2018509876A (en) * | 2015-03-13 | 2018-04-05 | パワーバイプロキシ リミテッド | Inductive power receiver |
| CN105024684A (en) * | 2015-08-06 | 2015-11-04 | 电子科技大学 | Level shifting circuit with characteristic of anti-noise interference |
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| CN201699675U (en) * | 2010-07-02 | 2011-01-05 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge-type drive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201699675U (en) * | 2010-07-02 | 2011-01-05 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge-type drive circuit |
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Effective date of registration: 20161128 Address after: 315809 Beilun City, Ningbo Province, Wan Chai street, Wan Jing Road, No. G, block, floor three, 12-3, 213 Patentee after: Core integrated circuit (Ningbo) Co., Ltd. Address before: Ningbo city science and Technology Park in Zhejiang province 315040 lease Poplar Road No. 7 Lane 578 Patentee before: Daily Silver IMP Microelectronics Co., Ltd. |