CN103280950B

CN103280950B - A kind of Intelligent Power Module driven for three-phase bridge

Info

Publication number: CN103280950B
Application number: CN201310144478.7A
Authority: CN
Inventors: 胡同灿
Original assignee: DAILY SILVER IMP MICROELECTRONICS Co Ltd
Current assignee: China Core Integrated Circuit Ningbo Co Ltd
Priority date: 2011-07-20
Filing date: 2011-07-20
Publication date: 2015-12-09
Anticipated expiration: 2031-07-20
Also published as: CN102291003B; CN103280950A; CN102291003A

Abstract

The invention discloses a kind of Intelligent Power Module driven for three-phase bridge, by the high-pressure side driver module by routine, Level shifter module and low-pressure side driver module integrated chip are split again, be divided into level transfer chip, high-pressure side controls driving chip and low-pressure side control driving chip realizes, complicated high_voltage isolation manufacturing process technology is adopted only to produce level transfer chip, controlling driving chip for high-pressure side control driving chip and low-pressure side then adopts common CMOS technology to produce, and without the need to adopting each chip of integrated high voltage isolation fabrication process in common CMOS technology, again by each chip, power device and fly-wheel diode are packaged together and are configured for the Intelligent Power Module of three-phase bridge driving, the production process of the level transfer chip of this Intelligent Power Module more easily controls, be conducive to improving yield, and high-pressure side can be made to control, and that driving chip and low-pressure side control that driving chip area can do is less, can ensure production yield.

Description

A kind of Intelligent Power Module driven for three-phase bridge

The divisional application of the application's to be original applying number be application for a patent for invention of 201110203093.4, its applying date is on 07 20th, 2011, and denomination of invention is " a kind of Intelligent Power Module driven for three-phase bridge ".

Technical field

The present invention relates to the Intelligent Power Module in the driving of a kind of motor, especially relate to a kind of Intelligent Power Module driven for three-phase bridge.

Background technology

Intelligent Power Module is that the one in motor driving field commonly uses module, bridge-type driving chip in Intelligent Power Module is generally half-bridge driven chip, full-bridge driving chip or three-phase bridge driving chip, two half-bridge driven chips can be combined into a full-bridge driving chip, and three half-bridge driven chips can be combined into a three-phase bridge driving chip.Wherein, three-phase bridge driving chip is often applied on the frequency conversion product of these class three phase electric machines such as blower fan, convertible frequency air-conditioner, variable-frequency washing machine, frequency-conversion microwave oven, electric motor of automobile driving, for the energy-saving and emission-reduction of product, therefore, research and the power intelligent module of production low cost is significant.Fig. 1 gives typical three-phase bridge and drives Intelligent Power Module, and each device in this Intelligent Power Module is encapsulated in a plastic packaging body with the form of chip.This Intelligent Power Module comprises the first power device 20, second power device 30, the 3rd power device 40, the 4th power device 50, the 5th power device 60, the 6th power device 70, three-phase bridge driving chip 10 and six fly-wheel diodes 161,162,163,164,165,166.First power device 20, second power device 30 and the 3rd power device 40 are on high-tension side power device, 4th power device 50, the 5th power device 60 and the 6th power device 70 are the power device of low-pressure side, between the current input terminal that six fly-wheel diodes 161,162,163,164,165,166 are connected across respective power device respectively and current output terminal, three-phase bridge driving chip 10 is referred to as grid drive chip or grid driving chip, it is the control driving chip of bridge-type driving chip, according to Module Division, this grid drive chip 10 can be divided into high-pressure side driver module 11, Level shifter module 12 and low-pressure side driver module 13, high-pressure side driver module 11 can produce three high-pressure side, tunnel drive singal HO1, HO2 and HO3, respectively with the first power device 20, second power device 30 is connected with the signal controlling end of the 3rd power device 40, utilize high-pressure side drive singal HO1, HO2 and HO3 controls the signal controlling end of on high-tension side power device, low-pressure side driver module 13 comprises control logic circuit, protective circuit and drive circuit, low-pressure side driver module 13 can produce three tunnel low-pressure side drive singal LO1, LO2 and LO3, respectively with the 4th power device 50, 5th power device 60 is connected with the signal controlling end of the 6th power device 70, utilize low-pressure side drive singal LO1, LO2 and LO3 controls the signal controlling end of the power device of low-pressure side, carry out the switch motion of power device, the Main Function of Level shifter module 12 be by the low-voltage control signal of low-pressure side driver module 13 by level conversion, become high voltage control signal and pass to high-pressure side driver module 11.First power device 20 in Fig. 1, second power device 30, 3rd power device 40, 4th power device 50, 5th power device 60 and the 6th power device 70 can be power IGBT(InsulatedGateBipolarTransistor, insulated gate bipolar transistor), or MOSFET(MetalOxideSemiconductorFieldEffectTransistor, mos field effect transistor), their grid is signal controlling end, the drain electrode of MOSFET is current input terminal, the source electrode of MOSFET is current output terminal, the current collection very current input terminal of power IGBT, the transmitting very current output terminal of power IGBT, also the power device of other type can be adopted, as thyristor etc., wherein need the gate pole of thyristor as signal controlling end, its anode is current input terminal, its negative electrode is current output terminal.

In existing application, three-phase bridge drives Intelligent Power Module normally to adopt power model integrated approach by single gate driving chip, six power devices (comprising six fly-wheel diodes) are integrated in a module, adopt in this way, on the one hand, in Intelligent Power Module device manufactures, because the area of six power devices is larger, and heating is also larger during power device work, therefore often require when assembling that the spacing between each power device wants large, and the area of grid drive chip compares the putting position of the area of power device, often seem very little, therefore cause grid drive chip to each power device metal connect wire can be very long, need during encapsulation to increase the pcb board material with high heat conduction, it is longer that the metal be simultaneously connected with power device due to the output of grid drive chip connects wire, therefore signal disturbing is subject to, the reliability of Intelligent Power Module is greatly reduced, be unfavorable for producing and Control for Dependability, on the other hand, the manufacturing cost of grid drive chip affects by process manufacturing technology, because grid drive chip needs to work under elevated pressure conditions, therefore, when manufacturing grid drive chip, need high_voltage isolation manufacturing process to be integrated in common CMOS process to produce, the object adopting high_voltage isolation manufacturing process is to high-pressure side driver module and low-pressure side driver module be kept apart, because common CMOS process integrated high voltage isolation manufacturing process flow is complicated, this technique is in order to high pressure resistant, the characteristic size that can reach is larger, originally only need the part of small-feature-size also must adopt large-feature-size, the characteristic size of the grid drive chip that manufacture is obtained is larger, thus the grid drive chip area occupied that result in identical function is too large, add the production cost of single gate driving chip, in addition, the area of the grid drive chip realized owing to adopting Single-Chip Integration method is larger, so also be unfavorable for the chip of design function complexity, more protective circuit as integrated in hope or measuring ability etc., will be larger this is because adopt this grid drive chip to carry out the area of design function complex chip, produce yield also can reduce, production cost also can increase simultaneously.

Summary of the invention

Technical problem to be solved by this invention be to provide a kind of easily manufactured, reliability is high, production cost is low and produce yield high for three-phase bridge drive Intelligent Power Module.

The present invention solves the problems of the technologies described above adopted technical scheme: a kind of Intelligent Power Module driven for three-phase bridge, comprise grid drive chip, one group of high-pressure side power device, one group of low side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip controls driving chip composition primarily of the low-pressure side adopting the high-pressure side of high_voltage isolation fabrication process to control driving chip and to adopt CMOS technology to produce, it is integrated that described high-pressure side controls the Level shifter module of driving chip primarily of the high-pressure side driver module of multichannel input and output and multichannel input and output and for the low level signal in described high-pressure side driver module being converted to high level signal, it is integrated primarily of the low-pressure side driver module of multichannel input and output that described low-pressure side controls driving chip, signal input part access high-pressure side, each road logic control signal of described high-pressure side driver module, the signal controlling end of each road signal output part of described high-pressure side driver module and the high-pressure side power device described in each connects one to one, each road signal input part access low-pressure side logic control signal of described low-pressure side driver module, the signal controlling end of each road signal output part of described low-pressure side driver module and the low side power device described in each connects one to one.

Described high-pressure side controls driving chip and is provided with one group of high-pressure side logic control signal input pin and one group of high-pressure side drive singal output pin, high-pressure side logic control signal input pin described in each is for accessing high-pressure side logic control signal, high-pressure side logic control signal input pin described in each and each road signal input part of described high-pressure side driver module connect one to one, one end of high-pressure side drive singal output pin described in each and each road signal output part of described high-pressure side driver module connect one to one, the other end of high-pressure side drive singal output pin described in each and the signal controlling end of the high-pressure side power device described in each connect one to one, described low-pressure side controls driving chip and is provided with one group of low-pressure side logic control signal input pin, one group of low-pressure side drive singal output pin, one group of detection signal input pin and one group of guard signal output pin, low-pressure side logic control signal input pin described in each is for accessing low-pressure side logic control signal, each road signal input part of the low-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, one end of low-pressure side drive singal output pin described in each and each road signal output part of described low-pressure side driver module connect one to one, the other end of low-pressure side drive singal output pin described in each and the signal controlling end of the low side power device described in each connect one to one, detection signal input pin described in each is for accessing various detection signal, one end of detection signal input pin described in each and each detection signal input of described low-pressure side driver module connect one to one, one end of guard signal output pin described in each and each guard signal output of described low-pressure side driver module connect one to one.

Described Level shifter module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described Level shifter module, the drain electrode of described LDMOS pipe is the signal output part of described Level shifter module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and drain electrode is 400 ~ 1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and drain electrode is 400 ~ 1200V.

The number of described high-pressure side power device and described low side power device is three, be connected with described fly-wheel diode between the current input terminal of described high-pressure side power device and current output terminal, between the current input terminal of described low side power device and current output terminal, be connected with described fly-wheel diode.

The high pressure range of bearing between described high-pressure side drive singal output pin and zero level is 400 ~ 1200V.

Described high-pressure side power device and described low side power device are insulated gate bipolar transistor, and for high-pressure side power device, its grid is signal controlling end, its current collection very current input terminal, and it launches very current output terminal; For low side power device, its grid is signal controlling end, its current collection very current output terminal, and it launches very current input terminal;

Or described high-pressure side power device and described low side power device are mos field effect transistor, for high-pressure side power device, its grid is signal controlling end, and its drain electrode is current input terminal, and its source electrode is current output terminal; For low side power device, its grid is signal controlling end, and its drain electrode is current output terminal, and its source electrode is current input terminal;

Or described high-pressure side power device and described low side power device are thyristor, for high-pressure side power device, its gate pole is signal controlling end, and its anode is current input terminal, and its negative electrode is current output terminal; For low side power device, its gate pole is signal controlling end, and its anode is current output terminal, and its negative electrode is current input terminal.

A kind of Intelligent Power Module driven for three-phase bridge, comprise grid drive chip, one group of high-pressure side power device, one group of low side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip controls driving chip composition primarily of adopting the level transfer chip of high_voltage isolation fabrication process and the one group of high-pressure side control driving chip adopting CMOS technology to produce and a low-pressure side, described level transfer chip is integrated primarily of the Level shifter module of multichannel input and output, it is integrated primarily of the high-pressure side driver module of single channel input and output that described high-pressure side controls driving chip, it is integrated primarily of the low-pressure side driver module of multichannel input and output that described low-pressure side controls driving chip, each road low-voltage signal input access low-pressure side logic control signal of described low-pressure side driver module, high-voltage signal input access high-pressure side, each road logic control signal of described low-pressure side driver module, the signal controlling end of each road signal output part of described low-pressure side driver module and the low side power device described in each connects one to one, each road signal input part of described Level shifter module is connected with each road level shifted signal output of described low-pressure side driver module, each road signal output part of described Level shifter module is connected with the signal input part of the high-pressure side driver module described in each, the low-voltage control signal that described low-pressure side driver module exports is converted to high voltage control signal and transmits high voltage control signal to described high-pressure side driver module by described Level shifter module, the signal controlling end of the signal output part of the high-pressure side driver module described in each and the high-pressure side power device described in each connects one to one.

Described low-pressure side controls driving chip and is provided with one group of low-pressure side logic control signal input pin, one group of high-pressure side logic control signal input pin, one group of low-pressure side drive singal output pin, one group of detection signal input pin, one group of guard signal output pin and one group of level shifted signal output pin, described level transfer chip is provided with signal output pin after one group of level shifted signal input pin and one group of level conversion, high-pressure side described in each controls driving chip and is provided with signal input pin and high-pressure side drive singal output pin after level conversion, low-pressure side logic control signal input pin described in each is for accessing low-pressure side logic control signal, each road low-voltage signal input of the low-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, high-pressure side logic control signal input pin described in each is for accessing high-pressure side logic control signal, each road high-voltage signal input of the high-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, one end of low-pressure side drive singal output pin described in each and each road signal output part of described low-pressure side driver module connect one to one, the other end of low-pressure side drive singal output pin described in each and the signal controlling end of the low side power device described in each connect one to one, detection signal input pin described in each is for accessing various detection signal, one end of detection signal input pin described in each and each detection signal input of described low-pressure side driver module connect one to one, one end of guard signal output pin described in each and each guard signal output of described low-pressure side driver module connect one to one, one end of level shifted signal output pin described in each and each road level shifted signal output of described low-pressure side driver module connect one to one, one end of the other end of level shifted signal output pin described in each and the signal input pin of the level switch module described in each connects one to one, the other end of the level shifted signal input pin described in each and each road signal input part of described Level shifter module connect one to one, after level conversion described in each, one end of signal output pin and each road signal output part of described Level shifter module connect one to one, after level conversion described in each, after the other end of signal output pin and level conversion described in each, one end of signal input pin connects one to one, after level conversion described in each, the signal input part of the other end of signal input pin and the high-pressure side driver module described in each connects one to one, one end of high-pressure side drive singal output pin described in each and the signal output part of the high-pressure side driver module described in each connect one to one, the other end of high-pressure side drive singal output pin described in each and the signal controlling end of the high-pressure side power device described in each connect one to one,

Described Level shifter module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described Level shifter module, the drain electrode of described LDMOS pipe is the signal output part of described Level shifter module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and drain electrode is 400 ~ 1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and drain electrode is 400 ~ 1200V;

A kind of Intelligent Power Module driven for three-phase bridge, comprise grid drive chip, one group of high-pressure side power device, one group of low side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip is primarily of adopting one group of level transfer chip of high_voltage isolation fabrication process and adopting one group of high-pressure side control driving chip of CMOS technology production and a low-pressure side to control driving chip composition, described level transfer chip is integrated primarily of the Level shifter module of single channel input and output, it is integrated primarily of the high-pressure side driver module of single channel input and output that described high-pressure side controls driving chip, it is integrated primarily of the low-pressure side driver module of multichannel input and output that described low-pressure side controls driving chip, each road low-voltage signal input access low-pressure side logic control signal of described low-pressure side driver module, high-voltage signal input access high-pressure side, each road logic control signal of described low-pressure side driver module, the signal controlling end of each road signal output part of described low-pressure side driver module and the low side power device described in each connects one to one, the signal input part of the Level shifter module described in each is connected with each road level shifted signal output of described low-pressure side driver module, the signal output part of the Level shifter module described in each is connected with the signal input part of the high-pressure side driver module described in each, the low-voltage control signal that described low-pressure side driver module exports is converted to high voltage control signal and transmits high voltage control signal to described high-pressure side driver module by described Level shifter module, the signal controlling end of the signal output part of the high-pressure side driver module described in each and the high-pressure side power device described in each connects one to one.

Described low-pressure side controls driving chip and is provided with one group of low-pressure side logic control signal input pin, one group of high-pressure side logic control signal input pin, one group of low-pressure side drive singal output pin, one group of detection signal input pin, one group of guard signal output pin and one group of level shifted signal output pin, level transfer chip described in each is provided with signal output pin after level shifted signal input pin and level conversion, high-pressure side described in each controls driving chip and is provided with signal input pin and high-pressure side drive singal output pin after level conversion, low-pressure side logic control signal input pin described in each is for accessing low-pressure side logic control signal, each road low-voltage signal input of the low-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, high-pressure side logic control signal input pin described in each is for accessing high-pressure side logic control signal, each road high-voltage signal input of the high-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, one end of low-pressure side drive singal output pin described in each and each road signal output part of described low-pressure side driver module connect one to one, the other end of low-pressure side drive singal output pin described in each and the signal controlling end of the low side power device described in each connect one to one, detection signal input pin described in each is for accessing various detection signal, one end of detection signal input pin described in each and each detection signal input of described low-pressure side driver module connect one to one, one end of guard signal output pin described in each and each guard signal output of described low-pressure side driver module connect one to one, one end of level shifted signal output pin described in each and each road level shifted signal output of described low-pressure side driver module connect one to one, one end of the other end of the level shifted signal output pin described in each and the level shifted signal input pin described in each connects one to one, the other end of level shifted signal input pin described in each and the signal input part of the Level shifter module described in each connect one to one, after level conversion described in each, the signal output part of one end of signal output pin and the Level shifter module described in each connects one to one, after level conversion described in each, after the other end of signal output pin and level conversion described in each, one end of signal input pin connects one to one, after level conversion described in each, the signal input part of the other end of signal input pin and the high-pressure side driver module described in each connects one to one, one end of high-pressure side drive singal output pin described in each and the signal output part of the high-pressure side driver module described in each connect one to one, the other end of high-pressure side drive singal output pin described in each and the signal controlling end of the high-pressure side power device described in each connect one to one,

Compared with prior art, the invention has the advantages that by the high-pressure side driver module by routine, Level shifter module and low-pressure side driver module integrated chip are split again, be divided into high-pressure side to control driving chip and low-pressure side control driving chip or be divided into high-pressure side to control driving chip, level transfer chip and low-pressure side control driving chip and realize, when being divided into high-pressure side control driving chip and low-pressure side control driving chip (the first situation), a complicated high_voltage isolation manufacturing process technology production high-pressure side is adopted to control driving chip, controlling driving chip for low-pressure side then adopts common CMOS technology to produce, and without the need to adopting each chip of integrated high voltage isolation fabrication process in common CMOS technology, be divided into high-pressure side control driving chip, when level transfer chip and low-pressure side control driving chip (the second situation), complicated high_voltage isolation manufacturing process technology is adopted only to produce level transfer chip, controlling driving chip for low-pressure side control driving chip and high-pressure side then adopts common CMOS technology to produce, and without the need to adopting each chip of integrated high voltage isolation fabrication process in common CMOS technology, again by each chip, power device and fly-wheel diode are packaged together and are configured for the Intelligent Power Module of three-phase bridge driving, achieve the function of Intelligent Power Module, the Intelligent Power Module of this structure controls driving chip or level transfer chip owing to adopting complicated high_voltage isolation manufacturing process technology only to produce high-pressure side on the one hand, and the area that high-pressure side controls driving chip only accounts for about 1/3rd of original grating driving chip area, the area of level transfer chip is then less, be only about 1/8th of original grating driving chip area, the process of manufacture making high-pressure side control driving chip (the first situation) or level transfer chip (the second situation) is more prone to control, more be conducive to improving yield, on the other hand, have employed common CMOS technology production low-pressure side control driving chip (the first situation) or low-pressure side control driving chip and high-pressure side and control driving chip (the second situation), the process conditions of common CMOS technology are simple, technology maturation, characteristic line are thinner, what therefore low-pressure side of the present invention controlled that driving chip (the first situation) and low-pressure side control that driving chip and high-pressure side control that driving chip (the second situation) area can do is less, effectively can ensure to produce yield, and save cost.

Intelligent Power Module of the present invention controls driving chip and low-pressure side driver module is integrated in low-pressure side to control in driving chip by high-pressure side driver module and Level shifter module being integrated in high-pressure side, or by high-pressure side driver module, Level shifter module and low-pressure side driver module are integrated in high-pressure side respectively and control driving chip, level transfer chip and low-pressure side control in driving chip, high-pressure side driving chip is utilized to drive high-pressure side power device, utilize low-pressure side to control driving chip and drive low side power device, adopt in this way when encapsulating Intelligent Power Module, effectively can shorten high-pressure side drive output signal and the conductor length between low-pressure side drive output signal and power device input signal, compared with single grid driving chip scheme, adopt the scheme that high-pressure side driver module is separated with low-pressure side driver module, the interference caused because wire is oversize can be greatly reduced, thus improve the reliability of Intelligent Power Module.

Intelligent Power Module of the present invention is also divided into by level being shifted chip three level transfer chips that three respectively control high-pressure side, a road control driving chip, adopt in this way, its level transfer chip only needs just can produce with common high pressure manufacturing process technology, and produce without the need to the high_voltage isolation manufacturing process technology of complexity, the complexity of technique can be reduced further, make production easier, simultaneously, reduce level transfer chip area, improve and produce yield, cost-saving.

Accompanying drawing explanation

Fig. 1 is the structural representation that typical three-phase bridge drives Intelligent Power Module;

Fig. 2 is the structural representation of the Intelligent Power Module of the embodiment of the present invention one;

Fig. 3 is the structural representation of the Intelligent Power Module of the embodiment of the present invention two;

Fig. 4 is the structural representation of the Intelligent Power Module of the embodiment of the present invention three;

Fig. 5 is the port schematic diagram of the LDMOS pipe in level of the present invention transfer chip;

Fig. 6 is grid drive chip for driving the waveform of the low-pressure side drive singal of low side power device and for driving the waveform schematic diagram of the high-pressure side drive singal of high-pressure side power device.

Embodiment

Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.

Embodiment one:

A kind of Intelligent Power Module driven for three-phase bridge that the present embodiment proposes, its circuit theory diagrams as shown in Figure 2, it mainly comprises grid drive chip, three high-pressure side power devices, 20,30,40, three low side power devices, 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if the inside of power device is integrated with fly-wheel diode, then the fly-wheel diode in this scheme has just no longer needed.Grid drive chip controls driving chip 120 primarily of the low-pressure side adopting the high-pressure side of high_voltage isolation fabrication process to control driving chip 180 and to adopt CMOS technology to produce and forms, high-pressure side control driving chip 180 primarily of the high-pressure side driver module 181 of three tunnel input and output and the Level shifter module 182 of three tunnel input and output integrated, it is integrated primarily of the low-pressure side driver module of three tunnel input and output that low-pressure side controls driving chip 120, low-pressure side driver module comprises control logic circuit, protective circuit and drive circuit etc., the effect of control logic circuit is by the process of the logical signal of outside input by control logic circuit, pass to drive circuit, guarantee the satisfactory sequential of drive output signal, comprise Dead Time size etc., the effect of the protective circuit in low-pressure side driver module is the size by judging the various detection signals inputted through the detection signal input of low-pressure side driver module, pass to control logic circuit or guard signal output, carry out driver output protecting control and fault cues output.Three road signal input part HIN1 of high-pressure side driver module 181, HIN2, HIN3 accesses high-pressure side logic control signal, three road signal output part HO1 of high-pressure side driver module 181, HO2, HO3 is respectively by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one, Level shifter module 182 is mainly used in the level conversion of high-pressure side driver module 181 inside, high level signal is converted to by low level signal, three road signal input part LIN1 of low-pressure side driver module, LIN2, LIN3 accesses low-pressure side logic control signal, three road signal output part LO1 of low-pressure side driver module, LO2, LO3 is respectively by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, the detection signal input of low-pressure side driver module is connected with needing the port (not shown) of the device detected, access various detection signal, as error protection or other guard signals etc., detection signal is after the protective circuit process in low-pressure side driver module, pass through control logic circuit, control the output of three road signal output parts of low-pressure side driver module, carry out of fault message by the guard signal output of low-pressure side driver module is exported simultaneously, the guard signal output of low-pressure side driver module connects the MCU that needs to obtain fault message or other needs each signal input port (not shown) of the device obtaining signal.

In this particular embodiment, high-pressure side controls driving chip 180 and is provided with three high-pressure side logic control signal input pins 183 and three high-pressure side drive singal output pins 82, 92, 102, three high-pressure side logic control signal input pins 183 for accessing high-pressure side logic control signal, three road signal input part HIN1 of three high-pressure side logic control signal input pins 183 and high-pressure side driver module 181, HIN2, HIN3 connects one to one, three high-pressure side drive singal output pins 82, 92, one end of 102 and three road signal output part HO1 of high-pressure side driver module 181, HO2, HO3 connects one to one, three high-pressure side drive singal output pins 82, 92, the other end of 102 is respectively by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one, and is respectively three high-pressure side power devices 20, 30, 40 provide high-pressure side drive singal, namely high-pressure side controls driving chip 180 by high-pressure side drive singal output pin 82 for first high-pressure side power device 20 provides a high-pressure side drive singal, high-pressure side controls driving chip 180 by high-pressure side drive singal output pin 92 for second high-pressure side power device 30 provides a high-pressure side drive singal, and high-pressure side controls driving chip 180 by high-pressure side drive singal output pin 102 for the 3rd high-pressure side power device 40 provides a high-pressure side drive singal.Low-pressure side controls driving chip 120 and is provided with three low-pressure side logic control signal input pins 123, three low-pressure side drive singal output pins 126, 127, 128, one group of detection signal input pin 125 and one group of guard signal output pin 124, each low-pressure side logic control signal input pin 123 is for accessing low-pressure side logic control signal, three road signal input part LIN1 of each low-pressure side logic control signal input pin 123 and low-pressure side driver module, LIN2, LIN3 connects one to one, three low-pressure side drive singal output pins 126, 127, one end of 128 and three road signal output part LO1 of low-pressure side driver module, LO2, LO3 connects one to one, three low-pressure side drive singal output pins 126, 127, the other end of 128 is respectively by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, be respectively three low side power devices 50, 60, 70 provide low-pressure side drive singal, namely low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for first low side power device 50 provides a low-pressure side drive singal, low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for second low side power device 60 provides a low-pressure side drive singal, low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for the 3rd low side power device 70 provides a low-pressure side drive singal, each detection signal input pin 125 is for accessing various detection signal, one end of each detection signal input pin 125 and each detection signal input of low-pressure side driver module connect one to one, one end of each guard signal output pin 124 and each guard signal output of low-pressure side driver module connect one to one.

At this, low-pressure side controls three low-pressure side drive singal output pins 126 of driving chip 120,127, the 128 low-pressure side drive singal LO exported separately and high-pressure side control three high-pressure side drive singal output pins 82 of driving chip 180,92, incidence relation is there is between the 102 high-pressure side drive singal HO exported separately, it passes through the sequencing control of high-pressure side logic control signal and low-pressure side logic control signal, the typical raster data model output waveform that each low-pressure side drive singal LO and each high-pressure side drive singal HO is formed as shown in Figure 6, alternately high level is there is in each low-pressure side drive singal LO and each high-pressure side drive singal HO after normal work, low level Dead Time DT(DeadTime is all) have one between both high level both, the pairing situation that there is incidence relation is: the low-pressure side drive singal that the high-pressure side drive singal of first via signal output part HO1 output of high-pressure side driver module and the first via signal output part LO1 of low-pressure side driver module export is one group, the low-pressure side drive singal that the high-pressure side drive singal of the second road signal output part HO2 output of high-pressure side driver module and the second road signal output part LO2 of low-pressure side driver module export is one group, the low-pressure side drive singal that the high-pressure side drive singal of the 3rd road signal output part HO3 output of high-pressure side driver module and the 3rd road signal output part LO3 of low-pressure side driver module export is one group.

In this particular embodiment, Level shifter module comprises one or more high voltage bearing LDMOS(LateralDoubleDiffusedMetalOxideSemiconductor) pipe, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid G of LDMOS pipe is the signal input part of Level shifter module 182, the drain D of LDMOS pipe is the signal output part of Level shifter module 182, the source S of LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid G of LDMOS pipe and drain D is 400 ~ 1200V, the high pressure range of bearing between the source S of LDMOS pipe and drain D is 400 ~ 1200V.In actual design process, Level shifter module 182 is generally made up of one or two LDMOS pipes, when being made up of two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, in this embodiment, three tunnel inputs of Level shifter module 182 export with three tunnels is the (not shown) interconnected with high-pressure side driver module 181.

In this particular embodiment, between the current input terminal that six fly-wheel diodes 161,162,163,164,165,166 are connected to three high-pressure side power devices, 20,30,40 and three low side power devices 50,60,70 correspondingly respectively by plain conductor and current output terminal, some power device is integrated with fly-wheel diode due to inside, and at this moment fly-wheel diode has no longer needed.

In this particular embodiment, the high pressure range can born between high-pressure side drive singal output pin 82,92,102 and zero level (GND) is 400 ~ 1200V.

In this particular embodiment, high-pressure side driver module 181, low-pressure side driver module, Level shifter module 182 all adopts prior art, high-pressure side driver module 181, low-pressure side driver module, three high-pressure side power devices 20, 30, 40 and three low side power devices 50, 60, 70 and six fly-wheel diodes 161, 162, 163, 164, 165, connected mode between 166 all adopts existing technology, control logic circuit in low-pressure side driver module, protective circuit and drive circuit and connected mode thereof all adopt prior art, three high-pressure side power devices 20, 30, 40 and three low side power devices 50, 60, the current output terminal of 70 is for connecting the phase line of three phase electric machine.

In this particular embodiment, three high-pressure side power devices, 20,30,40 and three low side power devices 50,60,70 all adopt prior art, as adopted insulated gate bipolar transistor (IGBT), mos field effect transistor (MOSFET), thyristor constant power device.When adopting insulated gate bipolar transistor (IGBT), its grid is signal controlling end, and wherein, for high-pressure side power device, the transmitting of IGBT very current output terminal is connected with the phase line of three phase electric machine, and the current collection of IGBT very current input terminal connects busbar voltage; For low side power device, very current input terminal is through current sense resistor R ground signalling (GND) for the transmitting of IGBT, and the current collection of IGBT very current output terminal is connected with the phase line of three phase electric machine.When adopting mos field effect transistor, its grid is signal controlling port, wherein, for high-pressure side power device, the source electrode of MOSFET is that current output terminal is connected with the phase line of three phase electric machine, and the drain electrode of MOSFET is that current input terminal connects busbar voltage; For low side power device, the source electrode of MOSFET be current input terminal through current sense resistor R ground signalling (GND), the drain electrode of MOSFET is that current output terminal is connected with the phase line of three phase electric machine.When adopting thyristor, its gate pole is signal controlling port, and wherein, for high-pressure side power device, the negative electrode of thyristor is that current output terminal is connected with the phase line of three phase electric machine, and the anode of thyristor connects busbar voltage; For low side power device, the negative electrode of thyristor be current input terminal through current sense resistor R ground signalling (GND), the anode of thyristor is that current output terminal is connected with the phase line of three phase electric machine.

When the Intelligent Power Module of practical application the present embodiment, by power module package mode, high-pressure side is controlled driving chip 180, low-pressure side controls driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 and be encapsulated in individual module, form the function of a complete Intelligent Power Module; In actual application, also the high-pressure side of the present embodiment control driving chip 180, low-pressure side can be controlled the function that driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 are directly welded on the intelligent object that formation one is complete on pcb board, i.e. COB(chip on board encapsulation) intelligent object; The high-pressure side of the present embodiment can also be controlled driving chip 180, low-pressure side control driving chip 120, power device (comprising three high-pressure side power devices, 20,30,40 and three low side power devices 50,60,70) and six fly-wheel diodes 161,162,163,164,165,166 encapsulate respectively, and then be welded on the function of the intelligent object that formation one is complete on pcb board.

Embodiment two:

A kind of Intelligent Power Module driven for three-phase bridge that the present embodiment proposes, as shown in Figure 3, the difference of itself and embodiment one is Level shifter module integrated separately, simultaneously by separately integrated for three tunnels of high-pressure side driver module its circuit theory diagrams.

The Intelligent Power Module of the present embodiment mainly comprises grid drive chip, three high-pressure side power devices, 20,30,40 and three low side power devices, 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if inside is integrated with fly-wheel diode, then the fly-wheel diode in this embodiment has just no longer needed.Grid drive chip is primarily of three the high-pressure sides control driving chip 80 adopting the level transfer chip 110 of high_voltage isolation fabrication process and adopt CMOS technology to produce, 90, 100 and low-pressure side control driving chip 120 and form, level transfer chip 110 is integrated primarily of the Level shifter module of three tunnel input and output, each high-pressure side controls driving chip 80, 90, 100 is integrated primarily of the high-pressure side driver module of road input and output separately, it is integrated primarily of the low-pressure side driver module of three tunnel input and output that low-pressure side controls driving chip 120, low-pressure side driver module comprises control logic circuit, protective circuit and drive circuit etc.Three road low-voltage signal input LIN1 of low-pressure side driver module, LIN2, LIN3 accesses low-pressure side logic control signal, three road high-voltage signal input HIN1 of low-pressure side driver module, HIN2, HIN3 accesses high-pressure side logic control signal, three road signal output part LO1 of low-pressure side driver module, LO2, LO3 is respectively by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, each road signal input part of Level shifter module is connected with each road level shifted signal output of low-pressure side driver module respectively by plain conductor, each road signal output part of Level shifter module is connected with a road signal input part of three high-pressure side driver modules respectively by plain conductor, the low-voltage control signal that low-pressure side driver module exports is converted to high voltage control signal and transmits high voltage control signal to high-pressure side driver module by Level shifter module, the signal output part HO1 of three high-pressure side driver modules, HO2, HO3 is respectively by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one, the detection signal input of low-pressure side driver module is connected with needing the port (not shown) of the device detected, access various detection signal, as error protection or other guard signals etc., detection signal is after the protective circuit process in low-pressure side driver module, pass through control logic circuit, control the output of three road signal output parts of low-pressure side driver module, carry out of fault message by the guard signal output of low-pressure side driver module is exported simultaneously, the guard signal output of low-pressure side driver module connects the MCU that needs to obtain fault message or other needs each signal input port (not shown) of the device obtaining signal.

In this particular embodiment, low-pressure side controls driving chip 120 and is provided with one group of low-pressure side logic control signal input pin 123, one group of high-pressure side logic control signal input pin 122, three low-pressure side drive singal output pins 126, 127, 128, one group of detection signal input pin 125, one group of guard signal output pin 124 and one group of level shifted signal output pin 121, level transfer chip 110 is provided with signal output pin 112 after one group of level shifted signal input pin 111 and three level conversion, 113, 114, first high-pressure side controls driving chip 80 and is provided with signal input pin 81 and high-pressure side drive singal output pin 82 after level conversion, second high-pressure side controls driving chip 90 and is provided with signal input pin 91 and high-pressure side drive singal output pin 92 after level conversion, 3rd high-pressure side controls driving chip 100 and is provided with signal input pin 101 and high-pressure side drive singal output pin 102 after level conversion.Each low-pressure side logic control signal input pin 123 is for accessing low-pressure side logic control signal, each low-pressure side logic control signal input pin 123 connects one to one with each road low-voltage signal input of low-pressure side driver module, each high-pressure side logic control signal input pin 122 is for accessing high-pressure side logic control signal, each high-pressure side logic control signal input pin 122 connects one to one with each road high-voltage signal input of low-pressure side driver module, three low-pressure side drive singal output pins 126, 127, one end of 128 and each road signal output part of low-pressure side driver module connect one to one, three low-pressure side drive singal output pins 126, 127, the other end of 128 is by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, be respectively three low side power devices 50, 60, 70 provide low-pressure side drive singal LO, namely low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for first low side power device 50 provides a low-pressure side drive singal, low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for second low side power device 60 provides a low-pressure side drive singal, low-pressure side controls driving chip 120 by low-pressure side drive singal output pin for the 3rd low side power device 70 provides a low pressure side drive singal, each detection signal input pin 125 is for accessing various detection signal, as error protection or other guard signal etc., the other end of each detection signal input pin 125 and each detection signal input of low-pressure side driver module connect one to one, each guard signal output pin 124 connects one to one with each guard signal output of low-pressure side driver module, each detection signal input pin 125 is for accessing various detection signal, one end of each detection signal input pin 125 and each detection signal input of low-pressure side driver module connect one to one, one end of each guard signal output pin 124 and each guard signal output of low-pressure side driver module connect one to one.One end of each level shifted signal output pin 121 and each road level shifted signal output of low-pressure side driver module connect one to one, the other end of each level shifted signal output pin 121 connects one to one respectively by one end of plain conductor and each level shifted signal input pin 111, the other end of each level shifted signal input pin 111 and each road signal input part of Level shifter module connect one to one, signal output pin 112 after three level conversion, 113, one end of 114 and each road signal output part of Level shifter module connect one to one, signal output pin 112 after three level conversion, 113, the other end of 114 is respectively by signal input pin 81 after plain conductor and three level conversion, 91, one end of 101 connects one to one, signal input pin 81 after three level conversion, 91, the signal input part of the other end of 101 and three high-pressure side driver modules connects one to one, three high-pressure side drive singal output pins 82, 92, the signal output part of one end of 102 and three high-pressure side driver modules connects one to one, three high-pressure side drive singal output pins 82, 92, the other end of 102 is respectively by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one, be respectively three high-pressure side power devices 20, 30, 40 provide high-pressure side drive singal HO, namely first high-pressure side controls driving chip 80 by high-pressure side drive singal output pin 82 for first low side power device 20 provides a high-pressure side drive singal, second high-pressure side controls driving chip 90 by high-pressure side drive singal output pin 92 for second low side power device 30 provides a high-pressure side drive singal, 3rd high-pressure side controls driving chip 100 by high-pressure side drive singal output pin 102 for the 3rd low side power device 30 provides a high-pressure side drive singal.

In this particular embodiment, Level shifter module comprises one or more high voltage bearing LDMOS(LateralDoubleDiffusedMetalOxideSemiconductor) pipe, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid G of LDMOS pipe is the signal input part of Level shifter module 182, the drain D of LDMOS pipe is the signal output part of Level shifter module 182, the source S of LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid G of LDMOS pipe and drain D is 400 ~ 1200V, the high pressure range of bearing between the source S of LDMOS pipe and drain D is 400 ~ 1200V.In actual design process, Level shifter module 182 is generally made up of one or two LDMOS pipes, when being made up of two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, the level shifted signal of each two the level shifted signal outputs output in three tunnels of low-pressure side driver module controls the grid of each two the LDMOS pipes in three tunnels respectively, the drain electrode of each two the LDMOS pipes in three tunnels forms signal output part after each two level conversion in three tunnels, and shift three level conversion of chip respectively with level after, signal output pin 112,113,114 is connected.

When the Intelligent power module circuit of practical application the present embodiment, by power module package mode, three high-pressure sides are controlled driving chip 80,90,100, level transfer chip 110, low-pressure side control driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 and be encapsulated in individual module, forms the function of a complete Intelligent Power Module, in actual application, also three of the present embodiment high-pressure side can be controlled driving chip 80,90,100, level transfer chip 110, low-pressure side control driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 and be directly welded on function pcb board being formed a complete intelligent object, i.e. COB(chip on board encapsulation) intelligent object, three of a present embodiment high-pressure side can also be controlled driving chip 80, 90, 100, level transfer chip 110, low-pressure side controls driving chip 120, power device (comprises three high-pressure side power devices 20, 30, 40 and three low side power devices 50, 60, 70) and six fly-wheel diodes 161, 162, 163, 164, 165, 166 encapsulate respectively, and then be welded on the function of the intelligent object that formation one is complete on pcb board, equally, on power device is chosen, if power device inside is integrated with fly-wheel diode, fly-wheel diode 161 then in diagram, 162, 163, 164, 165, 166 no longer need.

In this particular embodiment, complicated high_voltage isolation manufacturing process is adopted only to need to produce level transfer chip 110, and three high-pressure side control driving chip 80,90,100 and low-pressure side control driving chip 120 adopt common CMOS process to produce, the area making high-pressure side driving chip 80,90,100 and low-pressure side control driving chip 120 greatly reduces, not only increase production yield, greatly save production cost simultaneously.

Embodiment three:

A kind of Intelligent Power Module driven for three-phase bridge that the present embodiment proposes, as shown in Figure 4, the difference of its Intelligent Power Module provided with embodiment two is that the level on three tunnels being shifted chip separation becomes the level on three roads to shift chip to its circuit theory diagrams.

The Intelligent Power Module of the present embodiment mainly comprises grid drive chip, three high-pressure side power devices, 20,30,40, three low side power devices, 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if inside is integrated with fly-wheel diode, therefore, the fly-wheel diode in the present embodiment has just no longer needed.Grid drive chip is primarily of three the level transfer chips 130 adopting high_voltage isolation fabrication process, 140, 150 and three high-pressure sides adopting CMOS technology to produce control driving chip 80, 90, 100 and low-pressure side control driving chip 120 and form, each level transfer chip 130, 140, 150 is integrated primarily of the Level shifter module of single channel input and output, three high-pressure sides control driving chip 80, 90, 100 is integrated primarily of the high-pressure side driver module of single channel input and output, it is integrated primarily of the low-pressure side driver module of three tunnel input and output that low-pressure side controls driving chip 120, low-pressure side driver module comprises control logic circuit, protective circuit and drive circuit etc., each road low-voltage signal input access low-pressure side logic control signal of low-pressure side driver module, high-voltage signal input access high-pressure side, each road logic control signal of low-pressure side driver module, three road signal output parts of low-pressure side driver module are by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, the signal input part of three Level shifter module is connected with each road level shifted signal output of low-pressure side driver module respectively by plain conductor, the signal output part of three Level shifter module is connected respectively by the signal input part of plain conductor with three high-pressure side driver modules, the low-voltage control signal that low-pressure side driver module exports is converted to high voltage control signal and transmits high voltage control signal to high-pressure side driver module by Level shifter module, the signal output part of three high-pressure side driver modules is respectively by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one.

In this particular embodiment, low-pressure side controls driving chip 120 and is provided with one group of low-pressure side logic control signal input pin 123, one group of high-pressure side logic control signal input pin 122, three low-pressure side drive singal output pins 126, 127, 128, one group of detection signal input pin 125, one group of guard signal output pin 124 and one group of level shifted signal output pin 121, first level transfer chip 130 is provided with signal output pin 132 after level shifted signal input pin 131 and level conversion, second level transfer chip 140 is provided with signal output pin 142 after level shifted signal input pin 141 and level conversion, 3rd level transfer chip 150 is provided with signal output pin 152 after level shifted signal input pin 151 and level conversion, first high-pressure side controls driving chip 80 and is provided with signal input pin 81 and high-pressure side drive singal output pin 82 after level conversion, second high-pressure side controls driving chip 90 and is provided with signal input pin 91 and high-pressure side drive singal output pin 92 after level conversion, 3rd high-pressure side controls driving chip 100 and is provided with signal input pin 101 and high-pressure side drive singal output pin 102 after level conversion, each low-pressure side logic control signal input pin 123 is for accessing low-pressure side logic control signal, each low-pressure side logic control signal input pin 123 connects one to one with each road low-voltage signal input of low-pressure side driver module, each high-pressure side logic control signal input pin 122 is for accessing high-pressure side logic control signal, each high-pressure side logic control signal input pin 122 connects one to one with each road high-voltage signal input of low-pressure side driver module, three low-pressure side drive singal output pins 126, 127, one end of 128 and each road signal output part of low-pressure side driver module connect one to one, three low-pressure side drive singal output pins 126, 127, the other end of 128 is respectively by plain conductor and three low side power devices 50, 60, the signal controlling end of 70 connects one to one, each detection signal input pin 125 is for accessing various detection signal, one end of each detection signal input pin 125 and each detection signal input of low-pressure side driver module connect one to one, one end of each guard signal output pin 124 and each guard signal output of low-pressure side driver module connect one to one, one end of three level shifted signal output pins 121 and each road level shifted signal output of low-pressure side driver module connect one to one, the other end of three level shifted signal output pins 121 is respectively by plain conductor and three level shifted signal input pins 131, 141, one end of 151 connects one to one, three level shifted signal input pins 131, 141, the signal input part of the other end of 151 and three Level shifter module connects one to one, signal output pin 132 after three level conversion, 142, the signal output part of one end of 152 and three Level shifter module connects one to one, signal output pin 132 after three level conversion, 142, the other end of 152 is respectively by signal input pin 81 after plain conductor and three level conversion, 91, one end of 101 connects one to one, signal input pin 81 after three level conversion, 91, the signal input part of the other end of 101 and three high-pressure side driver modules connects one to one, three high-pressure side drive singal output pins 82, 92, the signal output part of one end of 102 and three high-pressure side driver modules connects one to one, three high-pressure side drive singal output pins 82, 92, the other end of 102 is by plain conductor and three high-pressure side power devices 20, 30, the signal controlling end of 40 connects one to one.

In this particular embodiment, level transfer chip 130, 140, 150 comprise one or more high voltage bearing LDMOS pipe respectively, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid of LDMOS pipe is as level transfer chip 130, 140, the signal input port of 150, the drain electrode of LDMOS pipe is as level transfer chip 130, 140, the signal output part of 150, between the grid G of LDMOS pipe and drain D, the high pressure of 400 ~ 1200V can be born between drain D and source S, therefore the high pressure of 400 ~ 1200V can be born after the level transfer level shifted signal input pin of chip and level conversion between signal output pin.In actual design process, level transfer chip 130, 140, 150 are generally made up of one or two LDMOS pipes, when being made up of two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, the low-voltage control signal of each two the level shifted signal outputs output in three tunnels of low-pressure side driver module controls the grid of each two the LDMOS pipes in three tunnels respectively, the drain electrode of each two the LDMOS pipes in three tunnels forms signal output part after each two level conversion in three tunnels, signal output pin 132 after the level conversion of chip is shifted respectively with each level, 142, 152 are connected.

When the Intelligent power module circuit of practical application the present embodiment, by power module package mode, three high-pressure sides are controlled driving chip 80,90,100, three level transfer chips 130,140,150, low-pressure side controls 50,60,70 and six afterflows of driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices and puts diode 161,162,163,164,165,166 and be encapsulated in individual module, forms the function of a complete Intelligent Power Module, in actual application, also three of the present embodiment high-pressure side can be controlled driving chip 80,90,100, three level transfer chips 130,140,150, low-pressure side controls driving chip 120, three high-pressure side power devices 20,30,40 and three low side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 and is directly welded on function pcb board being formed a complete intelligent object, i.e. COB(chip on board encapsulation) intelligent object, three of a present embodiment high-pressure side can also be controlled driving chip 80, 90, 100, three level transfer chips 130, 140, 150, low-pressure side controls driving chip 190, power device (comprises three high-pressure side power devices 20, 30, 40 and three low side power devices 50, 60, 70) and six fly-wheel diodes 161, 162, 163, 164, 165, 166 encapsulate respectively, and then be welded on the function of the intelligent object that formation one is complete on pcb board, equally, on power device is chosen, if power device inside is integrated with fly-wheel diode, diode 161 then in diagram, 162, 163, 164, 165, 166 no longer need.

Claims

1. the Intelligent Power Module driven for three-phase bridge, comprise grid drive chip, one group of high-pressure side power device, one group of low side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip controls driving chip composition primarily of adopting the level transfer chip of high_voltage isolation fabrication process and the one group of high-pressure side control driving chip adopting CMOS technology to produce and a low-pressure side, described level transfer chip is integrated primarily of the Level shifter module of multichannel input and output, it is integrated primarily of the high-pressure side driver module of single channel input and output that described high-pressure side controls driving chip, it is integrated primarily of the low-pressure side driver module of multichannel input and output that described low-pressure side controls driving chip, each road low-voltage signal input access low-pressure side logic control signal of described low-pressure side driver module, high-voltage signal input access high-pressure side, each road logic control signal of described low-pressure side driver module, the signal controlling end of each road signal output part of described low-pressure side driver module and the low side power device described in each connects one to one, each road signal input part of described Level shifter module is connected with each road level shifted signal output of described low-pressure side driver module, each road signal output part of described Level shifter module is connected with the signal input part of the high-pressure side driver module described in each, the low-voltage control signal that described low-pressure side driver module exports is converted to high voltage control signal and transmits high voltage control signal to described high-pressure side driver module by described Level shifter module, the signal controlling end of the signal output part of the high-pressure side driver module described in each and the high-pressure side power device described in each connects one to one,

Described low-pressure side controls driving chip and is provided with one group of low-pressure side logic control signal input pin, one group of high-pressure side logic control signal input pin, one group of low-pressure side drive singal output pin, one group of detection signal input pin, one group of guard signal output pin and one group of level shifted signal output pin, described level transfer chip is provided with signal output pin after one group of level shifted signal input pin and one group of level conversion, high-pressure side described in each controls driving chip and is provided with signal input pin and high-pressure side drive singal output pin after level conversion, low-pressure side logic control signal input pin described in each is for accessing low-pressure side logic control signal, each road low-voltage signal input of the low-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, high-pressure side logic control signal input pin described in each is for accessing high-pressure side logic control signal, each road high-voltage signal input of the high-pressure side logic control signal input pin described in each and described low-pressure side driver module connects one to one, one end of low-pressure side drive singal output pin described in each and each road signal output part of described low-pressure side driver module connect one to one, the other end of low-pressure side drive singal output pin described in each and the signal controlling end of the low side power device described in each connect one to one, detection signal input pin described in each is for accessing various detection signal, one end of detection signal input pin described in each and each detection signal input of described low-pressure side driver module connect one to one, one end of guard signal output pin described in each and each guard signal output of described low-pressure side driver module connect one to one, one end of level shifted signal output pin described in each and each road level shifted signal output of described low-pressure side driver module connect one to one, one end of the other end of level shifted signal output pin described in each and the signal input pin of the Level shifter module described in each connects one to one, the other end of the level shifted signal input pin described in each and each road signal input part of described Level shifter module connect one to one, after level conversion described in each, one end of signal output pin and each road signal output part of described Level shifter module connect one to one, after level conversion described in each, after the other end of signal output pin and level conversion described in each, one end of signal input pin connects one to one, after level conversion described in each, the signal input part of the other end of signal input pin and the high-pressure side driver module described in each connects one to one, one end of high-pressure side drive singal output pin described in each and the signal output part of the high-pressure side driver module described in each connect one to one, the other end of high-pressure side drive singal output pin described in each and the signal controlling end of the high-pressure side power device described in each connect one to one,

2. a kind of Intelligent Power Module driven for three-phase bridge according to claim 1, it is characterized in that described Level shifter module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described Level shifter module, the drain electrode of described LDMOS pipe is the signal output part of described Level shifter module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and drain electrode is 400 ~ 1200V, the high pressure range of bearing between the source electrode of described LDMOS pipe and drain electrode is 400 ~ 1200V.