CN102291003B - Intelligent power module for three-phase bridge type drive - Google Patents

Intelligent power module for three-phase bridge type drive Download PDF

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CN102291003B
CN102291003B CN 201110203093 CN201110203093A CN102291003B CN 102291003 B CN102291003 B CN 102291003B CN 201110203093 CN201110203093 CN 201110203093 CN 201110203093 A CN201110203093 A CN 201110203093A CN 102291003 B CN102291003 B CN 102291003B
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pressure side
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power device
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chip
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CN102291003A (en
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胡同灿
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China Core Integrated Circuit Ningbo Co Ltd
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DAILY SILVER IMP MICROELECTRONICS Co Ltd
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Abstract

The invention discloses an intelligent power module for three-phase bridge type drive. A conventional chip integrated with a high-voltage side driver module, a level shifter module and a low-voltage side driver module is redivided into a high-voltage side control driver chip and a low-voltage side control driver chip, the complex high-voltage isolation production technique is adopted to only produce the high-voltage side control driver chip, the ordinary CMOS (Complementary Metal Oxide Semiconductor) technique is adopted to produce the low-voltage side control driver chip, therefore the ordinary CMOS technique integrated with the high-voltage isolation production technique does not need to be adopted to product each chip, and each chip, power devices and fly-wheel diodes are then packagedtogether to form the intelligent power module for three-phase bridge type drive. The production process of the high-voltage side control driver chip of the intelligent power module can be more easilycontrolled, which can help to increase the yield rate; moreover, the CMOS technique is simple and mature, the characteristic line is thin, consequently, the area of the low-voltage side control driver chip can be small, the yield rate of production can be guaranteed, and the cost can be saved.

Description

A kind of Intelligent Power Module for the three-phase bridge driving
Technical field
The present invention relates to the Intelligent Power Module in a kind of motor-driven, especially relate to a kind of Intelligent Power Module for the three-phase bridge driving.
Background technology
Intelligent Power Module is the module a kind of commonly used in the motor-driven field, bridge-type in the Intelligent Power Module drives chip and is generally half-bridge driven chip, full-bridge driving chip or three-phase bridge driving chip, two half-bridge driven chips can be combined into a full-bridge and drive chip, and three half-bridge driven chips can be combined into a three-phase bridge and drive chip.Wherein, three-phase bridge drives chip and often is applied on the frequency conversion product of these class three phase electric machines such as blower fan, convertible frequency air-conditioner, variable-frequency washing machine, variable frequency microwave stove, electric motor of automobile driving, be used for the energy-saving and emission-reduction of product, therefore, study and produce that the power intelligent module is significant cheaply.Fig. 1 has provided typical three-phase bridge and has driven Intelligent Power Module, and each device in this Intelligent Power Module is encapsulated in the plastic packaging body with the form of chip.This Intelligent Power Module comprises that first power device 20, second power device 30, the 3rd power device 40, the 4th power device 50, the 5th power device 60, the 6th power device 70, three-phase bridge drive chip 10 and six fly-wheel diodes 161,162,163,164,165,166.First power device 20, second power device 30 and the 3rd power device 40 are on high-tension side power device; The 4th power device 50, the 5th power device 60 and the 6th power device 70 are the power device of low-pressure side; Six fly-wheel diodes 161,162,163,164,165,166 are connected across respectively between the current input terminal and current output terminal of power device separately; Three-phase bridge drives chip 10 and abbreviates grid drive chip or grid driving chip as, it is the control driving chip that bridge-type drives chip, according to Module Division, this grid drive chip 10 can be divided into high-pressure side driver module 11, level shift module 12 and low-pressure side driver module 13, high-pressure side driver module 11 can produce three tunnel high-pressure sides and drive signal HO1, HO2 and HO3, respectively with first power device 20, second power device 30 is connected with the signal controlling end of the 3rd power device 40, utilize the high-pressure side to drive signal HO1, HO2 and HO3 control the signal controlling end of on high-tension side power device, low-pressure side driver module 13 comprises control logic circuit, protective circuit and drive circuit, low-pressure side driver module 13 can produce three tunnel low-pressure sides and drive signal LO1, LO2 and LO3, respectively with the 4th power device 50, the 5th power device 60 is connected with the signal controlling end of the 6th power device 70, utilize low-pressure side to drive signal LO1, the signal controlling end of the power device of LO2 and LO3 control low-pressure side carries out the switch motion of power device; The main effect of level shift module 12 be with the low-voltage control signal of low-pressure side driver module 13 by level conversion, become high voltage control signal and pass to high-pressure side driver module 11.First power device 20 among Fig. 1, second power device 30, the 3rd power device 40, the 4th power device 50, the 5th power device 60 and the 6th power device 70 can be power IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), or MOSFET(Metal Oxide Semiconductor Field Effect Transistor, mos field effect transistor), their grid is the signal controlling end, the drain electrode of MOSFET is current input terminal, the source electrode of MOSFET is current output terminal, the current collection of power IGBT is current input terminal very, the emission of power IGBT is current output terminal very, also can adopt the power device of other type, as thyristor etc., wherein need gate pole with thyristor as the signal controlling end, its anode is current input terminal, and its negative electrode is current output terminal.
In existing the application, three-phase bridge drives Intelligent Power Module and normally adopts the power model integrated approach that single gate is driven chip, six power devices (comprising six fly-wheel diodes) are integrated in the module, adopt this method, on the one hand, in the Intelligent Power Module device is made, because the area of six power devices is bigger, and heating is also bigger during power device work, therefore when assembling, often require the spacing between each power device to want big, and the area of grid drive chip is compared the putting position of the area of power device, it is very little often to seem, therefore causing grid drive chip to the metal of each power device to connect lead can be very long, need increase the pcb board material with high heat conduction during encapsulation, simultaneously because the metal that the output of grid drive chip is connected with power device connection lead is longer, therefore be subject to signal and disturb, the reliability of Intelligent Power Module is greatly reduced, be unfavorable for producing and reliability control; On the other hand, the manufacturing cost of grid drive chip is influenced by process manufacturing technology, because grid drive chip need be worked under condition of high voltage, therefore, when manufacturing grid drive chip, high pressure need be isolated manufacturing process is integrated in the common CMOS technology and produces, the purpose that adopts high pressure to isolate manufacturing process is for high-pressure side driver module and low-pressure side driver module are kept apart, because common CMOS technology integrated high voltage is isolated the manufacturing process flow complexity, this technology is for high pressure resistant, the characteristic size that can reach is bigger, originally only need the part of small-feature-size also must adopt large-feature-size, make the characteristic size of making the grid drive chip that obtains bigger, thereby caused the grid drive chip area occupied of identical function too big, increased single gate and driven production cost of chip; In addition; because the area of the grid drive chip that employing single-chip integrated approach is realized is bigger; the chip that so also is unfavorable for the design function complexity; as the integrated more protective circuit of hope or measuring ability etc.; this is because adopt this grid drive chip to come the area of design function complex chip will be bigger; produce yield simultaneously and also can reduce, production cost also can increase.
Summary of the invention
Technical problem to be solved by this invention provide a kind of easily manufactured, reliability is high, production cost is low and produce yield high be used for the Intelligent Power Module that three-phase bridge drives.
The present invention solves the problems of the technologies described above the technical scheme that adopts: a kind of Intelligent Power Module for the three-phase bridge driving, comprise grid drive chip, one group of high-pressure side power device, one group of low-pressure side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip mainly drives chip by the high-pressure side control driving chip that adopts high pressure to isolate fabrication process with the low-pressure side control of adopting the CMOS explained hereafter and forms, the control of described high-pressure side drives chip mainly by high-pressure side driver module and the multichannel input and output of multichannel input and output and be used for low level signal with described high-pressure side driver module to be converted to the level shift module of high level signal integrated, it is mainly integrated by the low-pressure side driver module of multichannel input and output that described low-pressure side control drives chip, each road signal input part of described high-pressure side driver module inserts the high-pressure side logic control signal, each road signal output part of described high-pressure side driver module and the signal controlling end of each described high-pressure side power device connect one to one, each road signal input part of described low-pressure side driver module inserts the low-pressure side logic control signal, and each road signal output part of described low-pressure side driver module and the signal controlling end of each described low-pressure side power device connect one to one.
The control of described high-pressure side drives chip and is provided with one group of high-pressure side logic control signal input pin and one group of high-pressure side driving signal output pin; each described high-pressure side logic control signal input pin is used for inserting the high-pressure side logic control signal; each road signal input part of each described high-pressure side logic control signal input pin and described high-pressure side driver module connects one to one; each described high-pressure side drives an end of signal output pin and each road signal output part of described high-pressure side driver module connects one to one; each described high-pressure side drives the other end of signal output pin and the signal controlling end of each described high-pressure side power device connects one to one; described low-pressure side control drives chip and is provided with one group of low-pressure side logic control signal input pin; one group of low-pressure side drives the signal output pin; one group of detection signal input pin and one group of guard signal output pin; each described low-pressure side logic control signal input pin is used for inserting the low-pressure side logic control signal; each road signal input part of each described low-pressure side logic control signal input pin and described low-pressure side driver module connects one to one; each described low-pressure side drives an end of signal output pin and each road signal output part of described low-pressure side driver module connects one to one; each described low-pressure side drives the other end of signal output pin and the signal controlling end of each described low-pressure side power device connects one to one; each described detection signal input pin is used for inserting various detection signals; each detection signal input of one end of each described detection signal input pin and described low-pressure side driver module connects one to one, and each guard signal output of an end of each described guard signal output pin and described low-pressure side driver module connects one to one.
Described level shift module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described level shift module, the drain electrode of described LDMOS pipe is the signal output part of described level shift module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and the drain electrode is 400～1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and the drain electrode is 400～1200V.
The number of described high-pressure side power device and described low-pressure side power device is three, be connected with described fly-wheel diode between the current input terminal of described high-pressure side power device and the current output terminal, be connected with described fly-wheel diode between the current input terminal of described low-pressure side power device and the current output terminal.
It is 400～1200V that described high-pressure side drives the high pressure range of bearing between signal output pin and the zero level.
Described high-pressure side power device and described low-pressure side power device are insulated gate bipolar transistor, and for the high-pressure side power device, its grid is the signal controlling end, and its current collection is current input terminal very, and it launches very current output terminal; For the low-pressure side power device, its grid is the signal controlling end, and its current collection is current output terminal very, and it launches very current input terminal;
Or described high-pressure side power device and described low-pressure side power device be mos field effect transistor, and for the high-pressure side power device, its grid is the signal controlling end, and its drain electrode is current input terminal, and its source electrode is current output terminal; For the low-pressure side power device, its grid is the signal controlling end, and its drain electrode is current output terminal, and its source electrode is current input terminal;
Or described high-pressure side power device and described low-pressure side power device be thyristor, and for the high-pressure side power device, its gate pole is the signal controlling end, and its anode is current input terminal, and its negative electrode is current output terminal; For the low-pressure side power device, its gate pole is the signal controlling end, and its anode is current output terminal, and its negative electrode is current input terminal.
A kind of Intelligent Power Module for the three-phase bridge driving, comprise grid drive chip, one group of high-pressure side power device, one group of low-pressure side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip is mainly isolated the level transfer chip of fabrication process by the employing high pressure and one group of high-pressure side control driving chip and low-pressure side control driving chip of employing CMOS explained hereafter formed, it is mainly integrated by the level shift module of multichannel input and output that described level shifts chip, it is mainly integrated by the high-pressure side driver module of single channel input and output that the control of described high-pressure side drives chip, it is mainly integrated by the low-pressure side driver module of multichannel input and output that described low-pressure side control drives chip, each road low-voltage signal input of described low-pressure side driver module inserts the low-pressure side logic control signal, each road high-voltage signal input of described low-pressure side driver module inserts the high-pressure side logic control signal, each road signal output part of described low-pressure side driver module and the signal controlling end of each described low-pressure side power device connect one to one, each road signal input part of described level shift module is connected with each road level shifted signal output of described low-pressure side driver module, each road signal output part of described level shift module is connected with the signal input part of each described high-pressure side driver module, described level shift module is converted to the low-voltage control signal of described low-pressure side driver module output high voltage control signal and transmits high voltage control signal to described high-pressure side driver module, and the signal controlling end of the signal output part of each described high-pressure side driver module and each described high-pressure side power device connects one to one.
Described low-pressure side control drives chip and is provided with one group of low-pressure side logic control signal input pin, one group of high-pressure side logic control signal input pin, one group of low-pressure side drives the signal output pin, one group of detection signal input pin, one group of guard signal output pin and one group of level shifted signal output pin, described level shifts chip and is provided with signal output pin after one group of level shifted signal input pin and the one group of level conversion, each described high-pressure side control drives chip and is provided with that signal input pin and high-pressure side drive the signal output pin after the level conversion, each described low-pressure side logic control signal input pin is used for inserting the low-pressure side logic control signal, each road low-voltage signal input of each described low-pressure side logic control signal input pin and described low-pressure side driver module connects one to one, each described high-pressure side logic control signal input pin is used for inserting the high-pressure side logic control signal, each road high-voltage signal input of each described high-pressure side logic control signal input pin and described low-pressure side driver module connects one to one, each described low-pressure side drives an end of signal output pin and each road signal output part of described low-pressure side driver module connects one to one, each described low-pressure side drives the other end of signal output pin and the signal controlling end of each described low-pressure side power device connects one to one, each described detection signal input pin is used for inserting various detection signals, each detection signal input of one end of each described detection signal input pin and described low-pressure side driver module connects one to one, each guard signal output of one end of each described guard signal output pin and described low-pressure side driver module connects one to one, each road level shifted signal output of one end of each described level shifted signal output pin and described low-pressure side driver module connects one to one, one end of the signal input pin of the other end of each described level shifted signal output pin and each described level switch module connects one to one, each road signal input part of the other end of each described level shifted signal input pin and described level shift module connects one to one, each road signal output part of an end of signal output pin and described level shift module connects one to one after each described level conversion, after each described level conversion after the other end of signal output pin and each the described level conversion end of signal input pin connect one to one, the signal input part of the other end of signal input pin and each described high-pressure side driver module connects one to one after each described level conversion, each described high-pressure side drives an end of signal output pin and the signal output part of each described high-pressure side driver module connects one to one, and each described high-pressure side drives the other end of signal output pin and the signal controlling end of each described high-pressure side power device connects one to one;
Described level shift module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described level shift module, the drain electrode of described LDMOS pipe is the signal output part of described level shift module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and the drain electrode is 400～1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and the drain electrode is 400～1200V;
It is 400～1200V that described high-pressure side drives the high pressure range of bearing between signal output pin and the zero level.
A kind of Intelligent Power Module for the three-phase bridge driving, comprise grid drive chip, one group of high-pressure side power device, one group of low-pressure side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip mainly shifts chip by the one group of level that adopts high pressure to isolate fabrication process and adopts one group of high-pressure side control of CMOS explained hereafter to drive chip and a low-pressure side control drives chip and forms, it is mainly integrated by the level shift module of single channel input and output that described level shifts chip, it is mainly integrated by the high-pressure side driver module of single channel input and output that the control of described high-pressure side drives chip, it is mainly integrated by the low-pressure side driver module of multichannel input and output that described low-pressure side control drives chip, each road low-voltage signal input of described low-pressure side driver module inserts the low-pressure side logic control signal, each road high-voltage signal input of described low-pressure side driver module inserts the high-pressure side logic control signal, each road signal output part of described low-pressure side driver module and the signal controlling end of each described low-pressure side power device connect one to one, the signal input part of each described level shift module is connected with each road level shifted signal output of described low-pressure side driver module, the signal output part of each described level shift module is connected with the signal input part of each described high-pressure side driver module, described level shift module is converted to the low-voltage control signal of described low-pressure side driver module output high voltage control signal and transmits high voltage control signal to described high-pressure side driver module, and the signal controlling end of the signal output part of each described high-pressure side driver module and each described high-pressure side power device connects one to one.
Described low-pressure side control drives chip and is provided with one group of low-pressure side logic control signal input pin, one group of high-pressure side logic control signal input pin, one group of low-pressure side drives the signal output pin, one group of detection signal input pin, one group of guard signal output pin and one group of level shifted signal output pin, each described level shifts chip and is provided with signal output pin after level shifted signal input pin and the level conversion, each described high-pressure side control drives chip and is provided with that signal input pin and high-pressure side drive the signal output pin after the level conversion, each described low-pressure side logic control signal input pin is used for inserting the low-pressure side logic control signal, each road low-voltage signal input of each described low-pressure side logic control signal input pin and described low-pressure side driver module connects one to one, each described high-pressure side logic control signal input pin is used for inserting the high-pressure side logic control signal, each road high-voltage signal input of each described high-pressure side logic control signal input pin and described low-pressure side driver module connects one to one, each described low-pressure side drives an end of signal output pin and each road signal output part of described low-pressure side driver module connects one to one, each described low-pressure side drives the other end of signal output pin and the signal controlling end of each described low-pressure side power device connects one to one, each described detection signal input pin is used for inserting various detection signals, each detection signal input of one end of each described detection signal input pin and described low-pressure side driver module connects one to one, each guard signal output of one end of each described guard signal output pin and described low-pressure side driver module connects one to one, each road level shifted signal output of one end of each described level shifted signal output pin and described low-pressure side driver module connects one to one, one end of the other end of each described level shifted signal output pin and each described level shifted signal input pin connects one to one, the signal input part of the other end of each described level shifted signal input pin and each described level shift module connects one to one, the signal output part of an end of signal output pin and each described level shift module connects one to one after each described level conversion, after each described level conversion after the other end of signal output pin and each the described level conversion end of signal input pin connect one to one, the signal input part of the other end of signal input pin and each described high-pressure side driver module connects one to one after each described level conversion, each described high-pressure side drives an end of signal output pin and the signal output part of each described high-pressure side driver module connects one to one, and each described high-pressure side drives the other end of signal output pin and the signal controlling end of each described high-pressure side power device connects one to one;
Described level shift module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described level shift module, the drain electrode of described LDMOS pipe is the signal output part of described level shift module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and the drain electrode is 400～1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and the drain electrode is 400～1200V;
It is 400～1200V that described high-pressure side drives the high pressure range of bearing between signal output pin and the zero level.
Compared with prior art, the invention has the advantages that by the high-pressure side driver module with routine, level shift module and low-pressure side driver module integrated chip are cut apart again, be divided into high-pressure side control driving chip and low-pressure side control driving chip or be divided into high-pressure side control and drive chip, level shifts chip and low-pressure side control driving chip is realized, high-pressure side control drives chip and low-pressure side is controlled under the situation that drives chip (first kind of situation) being divided into, adopt complicated high pressure to isolate a manufacturing process technology production high-pressure side control and drive chip, then adopt common CMOS technology to produce for low-pressure side control driving chip, and need not to adopt in common CMOS technology integrated high voltage to isolate each chip of fabrication process, be divided into high-pressure side control driving chip, level shifts chip and low-pressure side is controlled under the situation that drives chip (second kind of situation), adopt complicated high pressure to isolate manufacturing process technology and only produce level transfer chip, then adopt common CMOS technology to produce for low-pressure side control driving chip and high-pressure side control driving chip, and need not to adopt in common CMOS technology integrated high voltage to isolate each chip of fabrication process, again with each chip, power device and fly-wheel diode are packaged together and are configured for the Intelligent Power Module that three-phase bridge drives, realized the function of Intelligent Power Module, the Intelligent Power Module of this structure drives chip or level transfer chip because the complicated high pressure isolation manufacturing process technology of employing has only been produced high-pressure side control on the one hand, and high-pressure side control driving area of chip only accounts for about 1/3rd of original grating driving chip area, it is then littler that level shifts area of chip, only drive about 1/8th of chip area for original grating, the process of manufacture that makes high-pressure side control drive chip (first kind of situation) or level transfer chip (second kind of situation) is more prone to control, more is conducive to improve yield; On the other hand, adopt common CMOS explained hereafter low-pressure side control to drive chip (first kind of situation) or low-pressure side control driving chip and high-pressure side control and driven chip (second kind of situation), the process conditions of common CMOS technology are simple, technology maturation, characteristic line are thinner, therefore low-pressure side control of the present invention drives chip (first kind of situation) and low-pressure side control and drives chip and high-pressure side control and drive less that chip (second kind of situation) area can do, can effectively guarantee to produce yield, and save cost.
Intelligent Power Module of the present invention drives chip and the low-pressure side driver module is integrated in low-pressure side control and drive in the chip by high-pressure side driver module and level shift module being integrated in high-pressure side control, or with the high-pressure side driver module, level shift module and low-pressure side driver module are integrated in high-pressure side control respectively and drive chip, level shifts chip and low-pressure side control drives in the chip, utilize the high-pressure side to drive chip drives high-pressure side power device, utilize low-pressure side control to drive chip drives low-pressure side power device, adopt this mode when the encapsulation Intelligent Power Module, can shorten the conductor length between high-pressure side drive output signal and low-pressure side drive output signal and the power device input signal effectively, driving chip solution with single grid compares, the scheme that adopts the high-pressure side driver module to separate with the low-pressure side driver module, can significantly reduce the interference that causes because lead is oversize, thereby improve the reliability of Intelligent Power Module.
Intelligent Power Module of the present invention also can be divided into three three level transfer chips respectively controlling one tunnel high-pressure side control driving chip by level being shifted chip, adopt this method, its level shifts chip and only need just can produce with common high pressure manufacturing process technology, produce and need not complicated high pressure isolation manufacturing process technology, can further reduce the complexity of technology, make production easier, simultaneously, reduce level and shift chip area, improve and produce yield, save cost.
Description of drawings
Fig. 1 is the structural representation that typical three-phase bridge drives Intelligent Power Module;
Fig. 2 is the structural representation of the Intelligent Power Module of the embodiment of the invention one;
Fig. 3 is the structural representation of the Intelligent Power Module of the embodiment of the invention two;
Fig. 4 is the structural representation of the Intelligent Power Module of the embodiment of the invention three;
Fig. 5 is the port schematic diagram that level of the present invention shifts the LDMOS pipe in the chip;
Fig. 6 drives the waveform of signal for grid drive chip for the low-pressure side that drives the low-pressure side power device and is used for driving the waveform schematic diagram of the high-pressure side driving signal of high-pressure side power device.
Embodiment
Describe in further detail below in conjunction with the present invention of accompanying drawing embodiment.
Embodiment one:
A kind of Intelligent Power Module for the three-phase bridge driving that present embodiment proposes, its circuit theory diagrams as shown in Figure 2, it mainly comprises grid drive chip, three high-pressure side power devices 20,30,40, three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if the inside of power device is integrated fly-wheel diode, then the fly-wheel diode in this scheme has just no longer needed.Grid drive chip mainly drives chip 120 by the high-pressure side control driving chip 180 that adopts high pressure to isolate fabrication process with the low-pressure side control of adopting the CMOS explained hereafter and forms, it is mainly integrated by the level shift module 182 of the high-pressure side driver module 181 of three tunnel input and output and three tunnel input and output that high-pressure side control drives chip 180, it is main integrated by the low-pressure side driver module of three tunnel input and output that low-pressure side control drives chip 120, the low-pressure side driver module comprises control logic circuit, protective circuit and drive circuit etc., the effect of control logic circuit is with the processing by control logic circuit of the logical signal of outside input, pass to drive circuit, guarantee the satisfactory sequential of drive output signal, comprise Dead Time size etc.; The effect of the protective circuit in the low-pressure side driver module is by judging the size of the various detection signals of importing through the detection signal input of low-pressure side driver module; pass to control logic circuit or guard signal output, drive output protection control and fault prompting output.Three road signal input part HIN1 of high-pressure side driver module 181; HIN2; HIN3 inserts the high-pressure side logic control signal; three road signal output part HO1 of high-pressure side driver module 181; HO2; HO3 is respectively by plain conductor and three high-pressure side power devices 20; 30; 40 signal controlling end connects one to one; level shift module 182 is mainly used in the level conversion of high-pressure side driver module 181 inside; be about to low level signal and convert high level signal to; three road signal input part LIN1 of low-pressure side driver module; LIN2; LIN3 inserts the low-pressure side logic control signal; three road signal output part LO1 of low-pressure side driver module; LO2; LO3 is respectively by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; the detection signal input of low-pressure side driver module is connected with the port (not shown) of the device that needs to detect; insert various detection signals; as fault protection or other guard signals etc.; after detection signal is handled through the protective circuit in the low-pressure side driver module; pass through control logic circuit; the output of three road signal output parts of control low-pressure side driver module; with the exporting of the guard signal output of fault message by the low-pressure side driver module, the guard signal output of low-pressure side driver module connects each signal input port (not shown) of MCU or other device that need obtain signal that need obtain fault message simultaneously.
In this specific embodiment, high-pressure side control drives chip 180 and is provided with three high-pressure side logic control signal input pins 183 and three high-pressure sides driving signal output pins 82,92,102, three high-pressure side logic control signal input pins 183 are used for inserting the high-pressure side logic control signal, three road signal input part HIN1 of three high-pressure side logic control signal input pins 183 and high-pressure side driver module 181, HIN2, HIN3 connects one to one, three high-pressure sides drive signal output pin 82,92, three road signal output part HO1 of an end of 102 and high-pressure side driver module 181, HO2, HO3 connects one to one, three high-pressure sides drive signal output pin 82,92,102 the other end is respectively by plain conductor and three high-pressure side power devices 20,30,40 signal controlling end connects one to one, be respectively three high-pressure side power devices 20,30,40 provide the high-pressure side to drive signal, be that control driving chip 180 in high-pressure side drives signal by high-pressure side driving signal output pin 82 for first high-pressure side power device 20 provides a high-pressure side, control driving chip 180 in high-pressure side drives signal output pin 92 by the high-pressure side and drives signal for second high-pressure side power device 30 provides a high-pressure side, and high-pressure side control drives chip 180 and drives signal by high-pressure side driving signal output pin 102 for the 3rd high-pressure side power device 40 provides a high-pressure side.Low-pressure side control drives chip 120 and is provided with three low-pressure side logic control signal input pins 123; three low-pressure sides drive signal output pin 126; 127; 128; one group of detection signal input pin 125 and one group of guard signal output pin 124; each low-pressure side logic control signal input pin 123 is used for inserting the low-pressure side logic control signal; three road signal input part LIN1 of each low-pressure side logic control signal input pin 123 and low-pressure side driver module; LIN2; LIN3 connects one to one; three low-pressure sides drive signal output pin 126; 127; three road signal output part LO1 of an end of 128 and low-pressure side driver module; LO2; LO3 connects one to one; three low-pressure sides drive signal output pin 126; 127; 128 the other end is respectively by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; be respectively three low-pressure side power devices 50; 60; 70 provide low-pressure side to drive signal; be that low-pressure side control driving chip 120 drives signal by low-pressure side driving signal output pin for first low-pressure side power device 50 provides a low-pressure side; low-pressure side control drives chip 120 and drives signal by low-pressure side driving signal output pin for second low-pressure side power device 60 provides a low-pressure side; low-pressure side control drives chip 120 and drives signal by low-pressure side driving signal output pin for the 3rd low-pressure side power device 70 provides a low-pressure side; each detection signal input pin 125 is used for inserting various detection signals; each detection signal input of one end of each detection signal input pin 125 and low-pressure side driver module connects one to one, and each guard signal output of an end of each guard signal output pin 124 and low-pressure side driver module connects one to one.
At this, three low-pressure sides that low-pressure side control drives chip 120 drive signal output pin 126,127, three high-pressure sides that 128 low-pressure sides of exporting separately drive signal LO and high-pressure side control driving chip 180 drive signal output pins 82,92,102 high-pressure sides of exporting separately drive between the signal HO and have incidence relation, it is by the sequencing control of high-pressure side logic control signal and low-pressure side logic control signal, the typical grid that each low-pressure side drives signal LO and each high-pressure side driving signal HO formation drives output waveform as shown in Figure 6, each low-pressure side drives signal LO and high level alternately appears in each high-pressure side driving signal HO after operate as normal, between both high level, exist one both be all low level Dead Time DT(Dead Time), exist the pairing situation of incidence relation to be: the low-pressure side driving signal that the high-pressure side of the first via signal output part HO1 output of high-pressure side driver module drives the first via signal output part LO1 output of signal and low-pressure side driver module is one group, the low-pressure side driving signal that the high-pressure side that the second road signal output part HO2 of high-pressure side driver module exports drives the second road signal output part LO2 output of signal and low-pressure side driver module is one group, and it is one group that the low-pressure side of the high-pressure side driving signal of the Third Road signal output part HO3 output of high-pressure side driver module and the Third Road signal output part LO3 output of low-pressure side driver module drives signal.
In this specific embodiment, the level shift module comprises one or more high voltage bearing LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) pipe, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid G of LDMOS pipe is the signal input part of level shift module 182, the drain D of LDMOS pipe is the signal output part of level shift module 182, the source S of LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid G of LDMOS pipe and the drain D is 400～1200V, and the high pressure range of bearing between the source S of LDMOS pipe and the drain D is 400～1200V.In the actual design process, level shift module 182 generally is made up of one or two LDMOS pipes, when being formed by two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, in this embodiment, three tunnel of level shift module 182 inputs are the (not shown)s that interconnect with high-pressure side driver module 181 with three tunnel outputs.
In this specific embodiment, six fly-wheel diodes 161,162,163,164,165,166 are connected between three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 the current input terminal and current output terminal correspondingly by plain conductor respectively, some power device is because inner integrated fly-wheel diode, and at this moment fly-wheel diode has no longer needed.
In this specific embodiment, the high-pressure side drives the high pressure range that can bear between signal output pin 82,92,102 and the zero level (GND) and is 400～1200V.
In this specific embodiment; high-pressure side driver module 181; the low-pressure side driver module; level shift module 182 all adopts prior art; high-pressure side driver module 181; the low-pressure side driver module; three high-pressure side power devices 20; 30; 40 and three low-pressure side power devices 50; 60; 70 and six fly-wheel diodes 161; 162; 163; 164; 165; connected mode between 166 all adopts existing technology; control logic circuit in the low-pressure side driver module; protective circuit and drive circuit and connected mode thereof all adopt prior art, three high-pressure side power devices 20; 30; 40 and three low-pressure side power devices 50; 60; 70 current output terminal is used for connecting the phase line of three phase electric machine.
In this specific embodiment, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 all adopt prior art, as adopting insulated gate bipolar transistor (IGBT), mos field effect transistor (MOSFET), thyristor constant power device.When adopting insulated gate bipolar transistor (IGBT), its grid is the signal controlling end, and wherein, for the high-pressure side power device, the emission of IGBT very current output terminal is connected with the phase line of three phase electric machine, and the current collection of IGBT very current input terminal connects busbar voltage; For the low-pressure side power device, very current input terminal is through current sense resistor R ground signalling (GND) in the emission of IGBT, and the current collection of IGBT very current output terminal is connected with the phase line of three phase electric machine.When adopting mos field effect transistor, its grid is the signal controlling port, wherein, and for the high-pressure side power device, the source electrode of MOSFET is that current output terminal is connected with the phase line of three phase electric machine, and the drain electrode of MOSFET connects busbar voltage for current input terminal; For the low-pressure side power device, the source electrode of MOSFET is current input terminal process current sense resistor R ground signalling (GND), and the drain electrode of MOSFET is that current output terminal is connected with the phase line of three phase electric machine.When adopting thyristor, its gate pole is the signal controlling port, and wherein, for the high-pressure side power device, the negative electrode of thyristor is that current output terminal is connected with the phase line of three phase electric machine, and the anode of thyristor connects busbar voltage; For the low-pressure side power device, the negative electrode of thyristor is current input terminal process current sense resistor R ground signalling (GND), and the anode of thyristor is that current output terminal is connected with the phase line of three phase electric machine.
When the Intelligent Power Module of practical application present embodiment, can pass through the power model packaged type, high-pressure side control driven chip 180, low-pressure side control drive chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 are encapsulated in the individual module, form the function of a complete Intelligent Power Module; In actual application, the control of the high-pressure side of present embodiment can be driven also that chip 180, low-pressure side control drive chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 directly are welded on the function that forms a complete intelligent object on the pcb board, i.e. COB(chip on board encapsulation) intelligent object; The control of the high-pressure side of present embodiment can also be driven that chip 180, low-pressure side control drive chip 120, power device (comprising three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70) and six fly-wheel diodes 161,162,163,164,165,166 encapsulate respectively, and then be welded on the function that forms a complete intelligent object on the pcb board.
Embodiment two:
A kind of Intelligent Power Module that drives for three-phase bridge that present embodiment proposes, its circuit theory diagrams as shown in Figure 3, the difference of itself and embodiment one is the level shift module integrated separately, simultaneously three tunnel separately integrated with the high-pressure side driver module.
The Intelligent Power Module of present embodiment mainly comprises grid drive chip, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if inner integrated fly-wheel diode, then the fly-wheel diode among this embodiment has just no longer needed.Grid drive chip mainly shifts chip 110 by the level that adopts high pressure to isolate fabrication process and adopts three high-pressure side controls of CMOS explained hereafter to drive chip 80; 90; 100 and low-pressure side controls drive chip 120 and form; it is main integrated by the level shift module of three tunnel input and output that level shifts chip 110; each high-pressure side control drives chip 80; 90; 100 is main integrated by the high-pressure side driver module of one tunnel input and output separately; it is main integrated by the low-pressure side driver module of three tunnel input and output that low-pressure side control drives chip 120, and the low-pressure side driver module comprises control logic circuit; protective circuit and drive circuit etc.Three road low-voltage signal input LIN1 of low-pressure side driver module; LIN2; LIN3 inserts the low-pressure side logic control signal; three road high-voltage signal input HIN1 of low-pressure side driver module; HIN2; HIN3 inserts the high-pressure side logic control signal; three road signal output part LO1 of low-pressure side driver module; LO2; LO3 is respectively by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; each road signal input part of level shift module is connected with each road level shifted signal output of low-pressure side driver module by plain conductor respectively; each road signal output part of level shift module is connected with one road signal input part of three high-pressure side driver modules by plain conductor respectively; the level shift module is converted to the low-voltage control signal of low-pressure side driver module output high voltage control signal and transmits high voltage control signal to the high-pressure side driver module; the signal output part HO1 of three high-pressure side driver modules; HO2; HO3 is respectively by plain conductor and three high-pressure side power devices 20; 30; 40 signal controlling end connects one to one; the detection signal input of low-pressure side driver module is connected with the port (not shown) of the device that needs to detect; insert various detection signals; as fault protection or other guard signals etc.; after detection signal is handled through the protective circuit in the low-pressure side driver module; pass through control logic circuit; the output of three road signal output parts of control low-pressure side driver module; with the exporting of the guard signal output of fault message by the low-pressure side driver module, the guard signal output of low-pressure side driver module connects each signal input port (not shown) of MCU or other device that need obtain signal that need obtain fault message simultaneously.
In this specific embodiment; low-pressure side control drives chip 120 and is provided with one group of low-pressure side logic control signal input pin 123; one group of high-pressure side logic control signal input pin 122; three low-pressure sides drive signal output pin 126; 127; 128; one group of detection signal input pin 125; one group of guard signal output pin 124 and one group of level shifted signal output pin 121; level shifts chip 110 and is provided with signal output pin 112 after one group of level shifted signal input pin 111 and three level conversion; 113; 114; the control of first high-pressure side drives chip 80 and is provided with that signal input pin 81 and high-pressure side drive signal output pin 82 after the level conversion; the control of second high-pressure side drives chip 90 and is provided with after the level conversion signal input pin 91 and high-pressure side and drives 92, the three high-pressure sides controls of signal output pin and drive chip 100 and be provided with that signal input pin 101 and high-pressure side drive signal output pin 102 after the level conversion.Each low-pressure side logic control signal input pin 123 is used for inserting the low-pressure side logic control signal; each low-pressure side logic control signal input pin 123 connects one to one with each road low-voltage signal input of low-pressure side driver module; each high-pressure side logic control signal input pin 122 is used for inserting the high-pressure side logic control signal; each high-pressure side logic control signal input pin 122 connects one to one with each road high-voltage signal input of low-pressure side driver module; three low-pressure sides drive signal output pin 126; 127; each road signal output part of an end of 128 and low-pressure side driver module connects one to one; three low-pressure sides drive signal output pin 126; 127; 128 the other end is by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; be respectively three low-pressure side power devices 50; 60; 70 provide low-pressure side to drive signal LO; be that low-pressure side control driving chip 120 drives signal by low-pressure side driving signal output pin for first low-pressure side power device 50 provides a low-pressure side; low-pressure side control drives chip 120 and drives signal by low-pressure side driving signal output pin for second low-pressure side power device 60 provides a low-pressure side; low-pressure side control drives chip 120 provides low one to press the side drive signal by low-pressure side driving signal output pin for the 3rd low-pressure side power device 70; each detection signal input pin 125 is used for inserting various detection signals; as fault protection or other guard signal etc.; each detection signal input of the other end of each detection signal input pin 125 and low-pressure side driver module connects one to one; each guard signal output pin 124 connects one to one with each guard signal output of low-pressure side driver module; each detection signal input pin 125 is used for inserting various detection signals; each detection signal input of one end of each detection signal input pin 125 and low-pressure side driver module connects one to one, and each guard signal output of an end of each guard signal output pin 124 and low-pressure side driver module connects one to one.Each road level shifted signal output of one end of each level shifted signal output pin 121 and low-pressure side driver module connects one to one, the other end of each level shifted signal output pin 121 connects one to one by an end of plain conductor and each level shifted signal input pin 111 respectively, each road signal input part of the other end of each level shifted signal input pin 111 and level shift module connects one to one, signal output pin 112 after three level conversion, 113, each road signal output part of an end of 114 and level shift module connects one to one, signal output pin 112 after three level conversion, 113,114 the other end is respectively by signal input pin 81 after plain conductor and three level conversion, 91, an end of 101 connects one to one, signal input pin 81 after three level conversion, 91, the signal input part of 101 the other end and three high-pressure side driver modules connects one to one, three high-pressure sides drive signal output pin 82,92, an end of 102 and the signal output part of three high-pressure side driver modules connect one to one, three high-pressure sides drive signal output pin 82,92,102 the other end is respectively by plain conductor and three high-pressure side power devices 20,30,40 signal controlling end connects one to one, be respectively three high-pressure side power devices 20,30,40 provide the high-pressure side to drive signal HO, be that first high-pressure side control driving chip 80 drives signal by high-pressure side driving signal output pin 82 for first low-pressure side power device 20 provides a high-pressure side, second high-pressure side control driving chip 90 drives signal output pin 92 by the high-pressure side and drives signal for second low-pressure side power device 30 provides a high-pressure side, and the 3rd high-pressure side control drives chip 100 and drives signal by high-pressure side driving signal output pin 102 for the 3rd low-pressure side power device 30 provides a high-pressure side.
In this specific embodiment, the level shift module comprises one or more high voltage bearing LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) pipe, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid G of LDMOS pipe is the signal input part of level shift module 182, the drain D of LDMOS pipe is the signal output part of level shift module 182, the source S of LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid G of LDMOS pipe and the drain D is 400～1200V, and the high pressure range of bearing between the source S of LDMOS pipe and the drain D is 400～1200V.In the actual design process, level shift module 182 generally is made up of one or two LDMOS pipes, when being formed by two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, the level shifted signal of three tunnel each two level shifted signal output outputs of low-pressure side driver module is controlled the grid of three tunnel each two LDMOS pipes respectively, the drain electrode of three tunnel each two LDMOS pipes forms signal output part after three tunnel each two level conversion, is connected with signal output pin 112,113,114 after level shifts three level conversion of chip respectively.
When the Intelligent Power Module circuit of practical application present embodiment, can pass through the power model packaged type, the control of three high-pressure sides is driven chips 80,90,100, level shift that chip 110, low-pressure sides control drive chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 are encapsulated in the individual module, form the function of a complete Intelligent Power Module; In actual application, also three high-pressure sides control of present embodiment can be driven chips 80,90,100, level and shift that chip 110, low-pressure sides control drive chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 directly are welded on the function that forms a complete intelligent object on the pcb board, i.e. COB(chip on board encapsulation) intelligent object; Three high-pressure side controls of present embodiment can also be driven chip 80,90,100, level shifts chip 110, low-pressure side control drives chip 120, power device (comprises three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70) and six fly-wheel diodes 161,162,163,164,165,166 encapsulate respectively, and then be welded on the pcb board function that forms a complete intelligent object, equally, on power device is chosen, if the inner integrated fly-wheel diode of power device, the then fly-wheel diode 161 in the diagram, 162,163,164,165,166 no longer need.
In this specific embodiment, adopt complicated high pressure to isolate manufacturing process and only need produce level transfer chip 110, and the control of three high-pressure sides drive chip 80,90,100 and low-pressure side control drive chip 120 and adopt common CMOS explained hereafter, make the high-pressure side drive chip 80,90,100 and the low-pressure side control area that drives chip 120 greatly reduce, not only improve the production yield, saved production cost simultaneously greatly.
Embodiment three:
A kind of Intelligent Power Module for the three-phase bridge driving that present embodiment proposes, its circuit theory diagrams as shown in Figure 4, the difference of the Intelligent Power Module that itself and embodiment two provide is that three tunnel level is shifted the level that chip is divided into three tunnel shifts chip.
The Intelligent Power Module of present embodiment mainly comprises grid drive chip, three high-pressure side power devices 20,30,40, three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166, for some power device, if inner integrated fly-wheel diode, therefore, the fly-wheel diode in the present embodiment has just no longer needed.Grid drive chip mainly shifts chip 130 by three level that adopt high pressure to isolate fabrication process; 140; 150 and adopt three high-pressure sides controls of CMOS explained hereafter to drive chips 80; 90; 100 and low-pressure side controls drive chip 120 and form; each level shifts chip 130; 140; 150 is main integrated by the level shift module of single channel input and output; three high-pressure side controls drive chip 80; 90; 100 is main integrated by the high-pressure side driver module of single channel input and output; it is main integrated by the low-pressure side driver module of three tunnel input and output that low-pressure side control drives chip 120; the low-pressure side driver module comprises control logic circuit; protective circuit and drive circuit etc.; each road low-voltage signal input of low-pressure side driver module inserts the low-pressure side logic control signal; each road high-voltage signal input of low-pressure side driver module inserts the high-pressure side logic control signal; three road signal output parts of low-pressure side driver module are by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; the signal input part of three level shift modules is connected with each road level shifted signal output of low-pressure side driver module by plain conductor respectively; the signal output part of three level shift modules is connected by the signal input part of plain conductor with three high-pressure side driver modules respectively; the level shift module is converted to the low-voltage control signal of low-pressure side driver module output high voltage control signal and transmits high voltage control signal to the high-pressure side driver module, and the signal output part of three high-pressure side driver modules is respectively by plain conductor and three high-pressure side power devices 20; 30; 40 signal controlling end connects one to one.
In this specific embodiment; low-pressure side control drives chip 120 and is provided with one group of low-pressure side logic control signal input pin 123; one group of high-pressure side logic control signal input pin 122; three low-pressure sides drive signal output pin 126; 127; 128; one group of detection signal input pin 125; one group of guard signal output pin 124 and one group of level shifted signal output pin 121; first level shifts chip 130 and is provided with signal output pin 132 after level shifted signal input pin 131 and the level conversion; second level shifts chip 140 and is provided with signal output pin 142 after level shifted signal input pin 141 and the level conversion; the 3rd level shifts chip 150 and is provided with signal output pin 152 after level shifted signal input pin 151 and the level conversion; the control of first high-pressure side drives chip 80 and is provided with that signal input pin 81 and high-pressure side drive signal output pin 82 after the level conversion; the control of second high-pressure side drives chip 90 and is provided with that signal input pin 91 and high-pressure side drive signal output pin 92 after the level conversion; the control of the 3rd high-pressure side drives chip 100 and is provided with that signal input pin 101 and high-pressure side drive signal output pin 102 after the level conversion; each low-pressure side logic control signal input pin 123 is used for inserting the low-pressure side logic control signal; each low-pressure side logic control signal input pin 123 connects one to one with each road low-voltage signal input of low-pressure side driver module; each high-pressure side logic control signal input pin 122 is used for inserting the high-pressure side logic control signal; each high-pressure side logic control signal input pin 122 connects one to one with each road high-voltage signal input of low-pressure side driver module; three low-pressure sides drive signal output pin 126; 127; each road signal output part of an end of 128 and low-pressure side driver module connects one to one; three low-pressure sides drive signal output pin 126; 127; 128 the other end is respectively by plain conductor and three low-pressure side power devices 50; 60; 70 signal controlling end connects one to one; each detection signal input pin 125 is used for inserting various detection signals; each detection signal input of one end of each detection signal input pin 125 and low-pressure side driver module connects one to one; each guard signal output of one end of each guard signal output pin 124 and low-pressure side driver module connects one to one; each road level shifted signal output of one end of three level shifted signal output pins 121 and low-pressure side driver module connects one to one; the other end of three level shifted signal output pins 121 is respectively by plain conductor and three level shifted signal input pins 131; 141; an end of 151 connects one to one; three level shifted signal input pins 131; 141; the signal input part of 151 the other end and three level shift modules connects one to one; signal output pin 132 after three level conversion; 142; an end of 152 and the signal output part of three level shift modules connect one to one; signal output pin 132 after three level conversion; 142; 152 the other end is respectively by signal input pin 81 after plain conductor and three level conversion; 91; an end of 101 connects one to one; signal input pin 81 after three level conversion; 91; the signal input part of 101 the other end and three high-pressure side driver modules connects one to one; three high-pressure sides drive signal output pin 82; 92; an end of 102 and the signal output part of three high-pressure side driver modules connect one to one, and three high-pressure sides drive signal output pin 82; 92; 102 the other end is by plain conductor and three high-pressure side power devices 20; 30; 40 signal controlling end connects one to one.
In this specific embodiment, level shifts chip 130,140,150 comprise one or more high voltage bearing LDMOS pipes respectively, the schematic diagram of three ports of LDMOS pipe as shown in Figure 5, the grid of LDMOS pipe shifts chip 130 as level, 140,150 signal input port, the drain electrode of LDMOS pipe is shifted chip 130 as level, 140,150 signal output part, between the grid G and drain D of LDMOS pipe, the high pressure of 400～1200V can both be born between drain D and the source S, so the high pressure of 400～1200V can be born after the level shifted signal input pin of level transfer chip and the level conversion between the signal output pin.In the actual design process, level shifts chip 130,140,150 generally are made up of one or two LDMOS pipes, when being formed by two LDMOS pipes, source electrode and the substrate of two LDMOS pipes link together, the low-voltage control signal of three tunnel each two level shifted signal output outputs of low-pressure side driver module is controlled the grid of three tunnel each two LDMOS pipes respectively, the drain electrode of three tunnel each two LDMOS pipes forms signal output part after three tunnel each two level conversion, shifts signal output pin 132 after the level conversion of chip with each level respectively, 142,152 are connected.
When the Intelligent Power Module circuit of practical application present embodiment, can pass through the power model packaged type, three high-pressure side control driving chips 80,90,100, three level transfer chips 130,140,150, low-pressure side control driving chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six afterflows are put diode 161,162,163,164,165,166 and are encapsulated in the individual module, form the function of a complete Intelligent Power Module; In actual application, also three high-pressure sides control of present embodiment can be driven chips 80,90,100, three level and shift that chip 130,140,150, low-pressure side control drive chip 120, three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70 and six fly-wheel diodes 161,162,163,164,165,166 directly are welded on the function that forms a complete intelligent object on the pcb board, i.e. COB(chip on board encapsulation) intelligent object; Three high-pressure side controls of present embodiment can also be driven chip 80,90,100, three level shift chip 130,140,150, low-pressure side control drives chip 190, power device (comprises three high-pressure side power devices 20,30,40 and three low-pressure side power devices 50,60,70) and six fly-wheel diodes 161,162,163,164,165,166 encapsulate respectively, and then be welded on the pcb board function that forms a complete intelligent object, equally, on power device is chosen, if the inner integrated fly-wheel diode of power device, the then diode 161 in the diagram, 162,163,164,165,166 no longer need.

Claims (5)

1. one kind is used for the Intelligent Power Module that three-phase bridge drives, comprise grid drive chip, one group of high-pressure side power device, one group of low-pressure side power device and one group of fly-wheel diode, it is characterized in that described grid drive chip mainly drives chip by the high-pressure side control driving chip that adopts high pressure to isolate fabrication process with the low-pressure side control of adopting the CMOS explained hereafter and forms, the control of described high-pressure side drives chip mainly by high-pressure side driver module and the multichannel input and output of multichannel input and output and be used for low level signal with described high-pressure side driver module to be converted to the level shift module of high level signal integrated, it is mainly integrated by the low-pressure side driver module of multichannel input and output that described low-pressure side control drives chip, each road signal input part of described high-pressure side driver module inserts the high-pressure side logic control signal, each road signal output part of described high-pressure side driver module and the signal controlling end of each described high-pressure side power device connect one to one, each road signal input part of described low-pressure side driver module inserts the low-pressure side logic control signal, and each road signal output part of described low-pressure side driver module and the signal controlling end of each described low-pressure side power device connect one to one;
The control of described high-pressure side drives chip and is provided with one group of high-pressure side logic control signal input pin and one group of high-pressure side driving signal output pin; each described high-pressure side logic control signal input pin is used for inserting the high-pressure side logic control signal; each road signal input part of each described high-pressure side logic control signal input pin and described high-pressure side driver module connects one to one; each described high-pressure side drives an end of signal output pin and each road signal output part of described high-pressure side driver module connects one to one; each described high-pressure side drives the other end of signal output pin and the signal controlling end of each described high-pressure side power device connects one to one; described low-pressure side control drives chip and is provided with one group of low-pressure side logic control signal input pin; one group of low-pressure side drives the signal output pin; one group of detection signal input pin and one group of guard signal output pin; each described low-pressure side logic control signal input pin is used for inserting the low-pressure side logic control signal; each road signal input part of each described low-pressure side logic control signal input pin and described low-pressure side driver module connects one to one; each described low-pressure side drives an end of signal output pin and each road signal output part of described low-pressure side driver module connects one to one; each described low-pressure side drives the other end of signal output pin and the signal controlling end of each described low-pressure side power device connects one to one; each described detection signal input pin is used for inserting various detection signals; each detection signal input of one end of each described detection signal input pin and described low-pressure side driver module connects one to one, and each guard signal output of an end of each described guard signal output pin and described low-pressure side driver module connects one to one.
2. a kind of Intelligent Power Module that drives for three-phase bridge according to claim 1, it is characterized in that described level shift module comprises at least one high voltage bearing LDMOS pipe, the grid of described LDMOS pipe is the signal input part of described level shift module, the drain electrode of described LDMOS pipe is the signal output part of described level shift module, the source electrode of described LDMOS pipe connects power supply ground, the high pressure range of bearing between the grid of described LDMOS pipe and the drain electrode is 400～1200V, and the high pressure range of bearing between the source electrode of described LDMOS pipe and the drain electrode is 400～1200V.
3. a kind of Intelligent Power Module that drives for three-phase bridge according to claim 2, the number that it is characterized in that described high-pressure side power device and described low-pressure side power device is three, be connected with described fly-wheel diode between the current input terminal of described high-pressure side power device and the current output terminal, be connected with described fly-wheel diode between the current input terminal of described low-pressure side power device and the current output terminal.
4. a kind of Intelligent Power Module for the three-phase bridge driving according to claim 3 is characterized in that it is 400～1200V that described high-pressure side drives the high pressure range of bearing between signal output pin and the zero level.
5. a kind of Intelligent Power Module that drives for three-phase bridge according to claim 4, it is characterized in that described high-pressure side power device and described low-pressure side power device are insulated gate bipolar transistor, for the high-pressure side power device, its grid is the signal controlling end, its current collection is current input terminal very, and it launches very current output terminal; For the low-pressure side power device, its grid is the signal controlling end, and its current collection is current output terminal very, and it launches very current input terminal;
Or described high-pressure side power device and described low-pressure side power device be mos field effect transistor, and for the high-pressure side power device, its grid is the signal controlling end, and its drain electrode is current input terminal, and its source electrode is current output terminal; For the low-pressure side power device, its grid is the signal controlling end, and its drain electrode is current output terminal, and its source electrode is current input terminal;
Or described high-pressure side power device and described low-pressure side power device be thyristor, and for the high-pressure side power device, its gate pole is the signal controlling end, and its anode is current input terminal, and its negative electrode is current output terminal; For the low-pressure side power device, its gate pole is the signal controlling end, and its anode is current output terminal, and its negative electrode is current input terminal.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103647446A (en) * 2013-12-03 2014-03-19 北京中电华大电子设计有限责任公司 SOC verification platform power supply structure for improving universality and reliability

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104678327B (en) * 2015-03-24 2018-04-24 陕西夸克自控科技有限公司 A kind of high voltage pulse load circuit and method of work
DE102015223599A1 (en) * 2015-11-27 2017-06-01 Robert Bosch Gmbh Power module for an electric motor
CN106841856B (en) * 2017-01-03 2019-12-17 航天科工防御技术研究试验中心 testing device for high-power three-phase bridge driver
CN107742620B (en) * 2017-09-30 2024-03-29 杭州士兰微电子股份有限公司 Integrated power module and intelligent power module for motor drive
CN107658283B (en) * 2017-09-30 2024-05-07 杭州士兰微电子股份有限公司 Integrated power module and intelligent power module for motor drive
CN110895648B (en) * 2018-08-22 2021-08-24 无锡华润上华科技有限公司 Power device and resistor simulation method thereof and power device simulation tool

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894834A (en) * 2010-07-06 2010-11-24 日银Imp微电子有限公司 Bridge drive circuit chip
CN101895190A (en) * 2010-07-02 2010-11-24 日银Imp微电子有限公司 Grid drive circuit for controlling bridge type drive circuit
CN202167995U (en) * 2011-07-20 2012-03-14 日银Imp微电子有限公司 Intelligent power module for three-phase bridge drive

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682007B2 (en) * 2004-11-10 2011-05-11 三菱電機株式会社 Power semiconductor device
JP2008148511A (en) * 2006-12-13 2008-06-26 Matsushita Electric Ind Co Ltd Inverter circuit
US7602228B2 (en) * 2007-05-22 2009-10-13 Semisouth Laboratories, Inc. Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
CN201629663U (en) * 2010-04-06 2010-11-10 汪之涵 Intelligent power module and device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101895190A (en) * 2010-07-02 2010-11-24 日银Imp微电子有限公司 Grid drive circuit for controlling bridge type drive circuit
CN101894834A (en) * 2010-07-06 2010-11-24 日银Imp微电子有限公司 Bridge drive circuit chip
CN202167995U (en) * 2011-07-20 2012-03-14 日银Imp微电子有限公司 Intelligent power module for three-phase bridge drive

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2008-148511A 2008.06.26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103647446A (en) * 2013-12-03 2014-03-19 北京中电华大电子设计有限责任公司 SOC verification platform power supply structure for improving universality and reliability
CN103647446B (en) * 2013-12-03 2017-01-18 北京中电华大电子设计有限责任公司 SOC verification platform power supply structure for improving universality and reliability

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