CN100595922C - Plane type negative resistance effect bidirectional triggering conducting diode - Google Patents
Plane type negative resistance effect bidirectional triggering conducting diode Download PDFInfo
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- CN100595922C CN100595922C CN200710036579A CN200710036579A CN100595922C CN 100595922 C CN100595922 C CN 100595922C CN 200710036579 A CN200710036579 A CN 200710036579A CN 200710036579 A CN200710036579 A CN 200710036579A CN 100595922 C CN100595922 C CN 100595922C
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- conducting diode
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Abstract
The invention discloses a planar type negative resistance effect bidirectional triggering conduction diode, which has the advantages of low leakage, low conduct voltage and simple process. The technical theme is that the bidirectional triggering conduction diode comprises a substrate and an epitaxial layer which is grown on the substrate and has the same conductivity type, two planar bipolar transistors are adjacently and symmetrically formed on the epitaxial layer, and the two planar bipolar transistors share a common collector region, and the emitting region and respective base local are inshort circuit. The invention is applied to the field of semiconductor devices.
Description
Technical field
The present invention relates to a kind of structure of semiconductor two-way trigger tube, relate in particular to a kind of negative resistance effect bidirectional triggering conducting diode of planar structure.
Background technology
Bidirectional triggered diode cooperates thyristor to be widely used in power conversion and rectification, and be indispensable device today of quite popularizing at hand-hold electronic equipments.Traditional bidirectional triggered diode diffuses to form two back-to-back PN junctions by impurity to chip two-sided and is constituted.The bidirectional triggered diode of this structure needs long High temperature diffusion and careful table top processing, has the big and too high weakness of conducting voltage of electric leakage.
Summary of the invention
The object of the present invention is to provide a kind of negative resistance effect bidirectional triggering conducting diode of plane, it has, and electric leakage is little, conducting voltage is low and advantage of simple technology.
Technical scheme of the present invention is: the invention provides a kind of negative resistance effect bidirectional triggering conducting diode of plane, comprising:
One base substrate and grow in a epitaxial loayer on this base substrate with same conduction type;
Two plane bipolar transistors, adjacent and be formed at symmetrically on this epitaxial loayer, these two plane bipolar transistors have a collector region, this collector region is made up of this base substrate and this epitaxial loayer, two emitter regions of these two plane bipolar transistors lay respectively in two bases of symmetry, and form partial short-circuit by a surface metal and base separately.
The negative resistance effect bidirectional triggering conducting diode of above-mentioned plane, wherein, this surface metal is as two exits of this diode.
The negative resistance effect bidirectional triggering conducting diode of above-mentioned plane, wherein, the base of these two plane bipolar transistors is injected by ion and forms.
The negative resistance effect bidirectional triggering conducting diode of above-mentioned plane, wherein, the base of these two plane bipolar transistors is diffuseed to form by surface impurity.
The negative resistance effect bidirectional triggering conducting diode of above-mentioned plane, wherein, the emitter region of these two plane bipolar transistors is injected by ion and is formed.
The negative resistance effect bidirectional triggering conducting diode of above-mentioned plane, wherein, the emitter region of these two plane bipolar transistors is diffuseed to form by surface impurity.
The present invention contrasts prior art following beneficial effect: the present invention the base substrate growing epitaxial layers and epi-layer surface form two adjacent and symmetrical, shared collector region, have the plane bipolar transistor of base to the emitter region partial short-circuit.Two transistorized emitter regions form partial short-circuit with separately base by surface metal respectively and become the two ends of bidirectional triggered diode.Collector region causes the conducting of four-layer structure to the avalanche breakdown of arbitrary base and the low resistive state that enters the triggering and conducting diode.Structure of the present invention can also make bidirectional triggered diode have low conducting voltage except that the technology that can simplify traditional bidirectional triggered diode.
Description of drawings
Fig. 1 is the structure chart of preferred embodiment of the negative resistance effect bidirectional triggering conducting diode of plane of the present invention.
Fig. 2 is the schematic diagram of forward voltage-current characteristics of the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 shows the structure of the negative resistance effect bidirectional triggering conducting diode of plane of the present invention.See also Fig. 1, the present invention has used the principle of base co-current modulation and has made the bidirectional triggered diode of low conducting voltage.At the epitaxial loayer 4 of the same conduction type of base substrate 1 growth, substrate can be P type or N type, and resistivity is 0.001～0.01 ohmcm, and the thickness of epitaxial loayer 4 is 2～15 microns, and resistivity is 1～10 ohmcm.The surface of epitaxial loayer 4 is manufactured with plane bipolar transistor 7a, the 7b of two symmetries, their total collector regions that is formed by base substrate 1 and epitaxial loayer 4.The base 31,32 of plane bipolar transistor 7a, 7b is injected by ion or surface impurity diffuses to form, and diffuses to form emitter region 51,52 by ion injection or surface impurity again in base 31,32.Base region surface concentration is 1E17～5E18/ cubic centimetre, 2～15 microns of junction depths, and the emitter region surface concentration is 2E19～1E20/ cubic centimetre, 5～10 microns of junction depths, base spacing L is 2～35 microns.The metal level on surface connects emitter region 51,52 and part base 31,32 by the window of oxide layer, as two electrodes 61,62 of diode.
The principle of the bidirectional triggered diode of present embodiment structure is described below.Surpass wherein any when putting on voltage between two emitter region electrodes 61,62, for example, when surpassing the avalanche breakdown value of collector region-base of transistor 7a, a large amount of many electron currents enter the base 31 of transistor 7a and directly flow to short dot with emitter region 51.Because the short dot of base and emitter region is arranged on the far-end of collector-base avalanche breakdown point, most many electronic circuits need to flow to short dot along the bottom of parallel emitter region.This strand transverse current is set up the voltage that increases with electric current in 51 bottoms in the emitter region, and finally a bit causes the four-layer structure of 31-epitaxial loayer 4-base, 51-base, emitter region 32 and provide the four-layer structure conducting required trigger current simultaneously at certain.In case the voltage between four-layer structure conducting, two emitter regions descends, avalanche breakdown will not exist, and the triggering and conducting diode enters low resistive state.
See also Fig. 2, Fig. 2 shows forward voltage-current characteristics of the present invention, because the symmetry of diode structure, reverse voltage-current characteristic is in the third quadrant symmetry.
Should be understood that those of ordinary skills easily know based on above-mentioned structure and principle: (1) base is in the part of emitter region bottom, as length, width, highly, average resistivity, determined the triggering breakover current of triggering and conducting diode of the present invention; (2) bipolar transistor among the present invention can be that the P-N-P type also can be the N-P-N type; (3) impurity gradient of the avalanche breakdown parameter of collector-base (being epitaxy layer thickness and resistivity), base has determined the trigger voltage of triggering and conducting diode of the present invention.
The foregoing description provides to those of ordinary skills and realizes or use of the present invention; those of ordinary skills can be under the situation that does not break away from invention thought of the present invention; the foregoing description is made various modifications or variation; thereby protection scope of the present invention do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (6)
- The negative resistance effect bidirectional triggering conducting diode of 1 one kinds of planes comprises:One base substrate and grow in a epitaxial loayer on this base substrate with same conduction type;Two plane bipolar transistors, adjacent and be formed at symmetrically on this epitaxial loayer, these two plane bipolar transistors have a collector region, this collector region is made up of this base substrate and this epitaxial loayer, two emitter regions of these two plane bipolar transistors lay respectively in two bases of symmetry, and form partial short-circuit by a surface metal and base separately.
- The negative resistance effect bidirectional triggering conducting diode of 2 planes according to claim 1 is characterized in that, this surface metal is as two exits of this diode.
- The negative resistance effect bidirectional triggering conducting diode of 3 planes according to claim 1 is characterized in that, the base of these two plane bipolar transistors is injected by ion and forms.
- The negative resistance effect bidirectional triggering conducting diode of 4 planes according to claim 1 is characterized in that, the base of these two plane bipolar transistors is diffuseed to form by surface impurity.
- The negative resistance effect bidirectional triggering conducting diode of 5 planes according to claim 1 is characterized in that, the emitter region of these two plane bipolar transistors is injected by ion and formed.
- The negative resistance effect bidirectional triggering conducting diode of 6 planes according to claim 1 is characterized in that, the emitter region of these two plane bipolar transistors is diffuseed to form by surface impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710036579A CN100595922C (en) | 2007-01-18 | 2007-01-18 | Plane type negative resistance effect bidirectional triggering conducting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710036579A CN100595922C (en) | 2007-01-18 | 2007-01-18 | Plane type negative resistance effect bidirectional triggering conducting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101226940A CN101226940A (en) | 2008-07-23 |
| CN100595922C true CN100595922C (en) | 2010-03-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200710036579A Expired - Fee Related CN100595922C (en) | 2007-01-18 | 2007-01-18 | Plane type negative resistance effect bidirectional triggering conducting diode |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222670A (en) * | 2011-06-16 | 2011-10-19 | 深圳市力生美半导体器件有限公司 | AC-DC (alternating current-direct current) switching power supply and power triode thereof |
| CN102760774B (en) * | 2012-07-04 | 2014-11-26 | 王萌 | High-voltage trigger tube and triggering circuit for both stove oven and metal halogen lamp |
| CN113314616A (en) * | 2021-06-08 | 2021-08-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional conduction EDS diode chip and manufacturing method thereof |
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- 2007-01-18 CN CN200710036579A patent/CN100595922C/en not_active Expired - Fee Related
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| CN101226940A (en) | 2008-07-23 |
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Inventor after: Wu Hongjian Inventor before: Wu Hongji |
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Free format text: CORRECT: INVENTOR; FROM: WU HONGJI TO: WU HONGJIAN |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100324 Termination date: 20200118 |