WO2012153926A3 - 자기 공명 세차 현상과 이중 스핀 필터 효과를 이용한 스핀전달토크 자기 메모리 소자 - Google Patents

자기 공명 세차 현상과 이중 스핀 필터 효과를 이용한 스핀전달토크 자기 메모리 소자 Download PDF

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Publication number
WO2012153926A3
WO2012153926A3 PCT/KR2012/003345 KR2012003345W WO2012153926A3 WO 2012153926 A3 WO2012153926 A3 WO 2012153926A3 KR 2012003345 W KR2012003345 W KR 2012003345W WO 2012153926 A3 WO2012153926 A3 WO 2012153926A3
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WO
WIPO (PCT)
Prior art keywords
spin
memory device
magnetic memory
magnetization
filtering effect
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PCT/KR2012/003345
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English (en)
French (fr)
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WO2012153926A2 (ko
Inventor
이경진
서수만
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고려대학교 산학협력단
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Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Priority to JP2014510243A priority Critical patent/JP6028018B2/ja
Priority to US14/116,959 priority patent/US20140159175A1/en
Publication of WO2012153926A2 publication Critical patent/WO2012153926A2/ko
Publication of WO2012153926A3 publication Critical patent/WO2012153926A3/ko
Priority to US14/814,163 priority patent/US9478729B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

본 발명은 자기 메모리 소자에 관한 것으로서, 일정한 포화자화값을 갖는 수평방향 가변 자화층인 자유 자성층을 더 포함하여, 종래 자기 메모리 소자에 비해 스위칭 전류가 현저히 감소하여 소자의 고집적화 구현이 가능하고, 자화 반전에 필요한 임계전류 밀도를 낮추어 소자의 소비 전력을 저감시킬 수 있다. 또한, 고정 자성층으로부터 발생하는 누설자기장 효과를 저감하여 기록된 자화정보가 열적으로 안정성을 가진다.
PCT/KR2012/003345 2011-05-12 2012-04-30 자기 공명 세차 현상과 이중 스핀 필터 효과를 이용한 스핀전달토크 자기 메모리 소자 WO2012153926A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014510243A JP6028018B2 (ja) 2011-05-12 2012-04-30 磁気共鳴歳差現象と２重スピンフィルター効果とを利用するスピン伝達トルク磁気メモリ素子
US14/116,959 US20140159175A1 (en) 2011-05-12 2012-04-30 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
US14/814,163 US9478729B2 (en) 2011-05-12 2015-07-30 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110044587A KR101195041B1 (ko) 2011-05-12 2011-05-12 자기 공명 세차 현상을 이용한 스핀전달토크 자기 메모리 소자
KR10-2011-0044587 2011-05-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/116,959 A-371-Of-International US20140159175A1 (en) 2011-05-12 2012-04-30 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
US14/814,163 Division US9478729B2 (en) 2011-05-12 2015-07-30 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect

Publications (2)

Publication Number Publication Date
WO2012153926A2 WO2012153926A2 (ko) 2012-11-15
WO2012153926A3 true WO2012153926A3 (ko) 2013-01-17

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PCT/KR2012/003345 WO2012153926A2 (ko) 2011-05-12 2012-04-30 자기 공명 세차 현상과 이중 스핀 필터 효과를 이용한 스핀전달토크 자기 메모리 소자

Country Status (4)

Country Link
US (2) US20140159175A1 (ko)
JP (1) JP6028018B2 (ko)
KR (1) KR101195041B1 (ko)
WO (1) WO2012153926A2 (ko)

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Also Published As

Publication number Publication date
US20150340595A1 (en) 2015-11-26
US20140159175A1 (en) 2014-06-12
JP2014517516A (ja) 2014-07-17
US9478729B2 (en) 2016-10-25
WO2012153926A2 (ko) 2012-11-15
JP6028018B2 (ja) 2016-11-16
KR101195041B1 (ko) 2012-10-31

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