WO2012153591A1 - Appareil de formation de film - Google Patents

Appareil de formation de film Download PDF

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Publication number
WO2012153591A1
WO2012153591A1 PCT/JP2012/059733 JP2012059733W WO2012153591A1 WO 2012153591 A1 WO2012153591 A1 WO 2012153591A1 JP 2012059733 W JP2012059733 W JP 2012059733W WO 2012153591 A1 WO2012153591 A1 WO 2012153591A1
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WO
WIPO (PCT)
Prior art keywords
gas
processing
processing space
substrate
film
Prior art date
Application number
PCT/JP2012/059733
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English (en)
Japanese (ja)
Inventor
網倉　学
斉藤　哲也
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東京エレクトロン株式会社
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Publication of WO2012153591A1 publication Critical patent/WO2012153591A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Definitions

  • the present invention relates to a film forming apparatus suitable for an ALD (Atomic Layer Deposition) process.
  • ALD Atomic Layer Deposition
  • a desired device is manufactured by repeatedly performing various processes such as a film forming process and an etching process on a semiconductor wafer (hereinafter simply referred to as a wafer) as a substrate.
  • CVD Chemical Vapor Deposition
  • ALD Atomic Layer Deposition
  • a first processing gas is adsorbed at an atomic layer level, and then a second processing gas is supplied to react to form an extremely thin film to form a film having a predetermined thickness.
  • a conventional deposition apparatus using ALD uses a processing vessel having a closed structure as much as possible so that high-pressure processing can be performed in order to increase the efficiency of adsorption and reaction of processing gas, and a gas inlet provided directly above the central portion of the wafer.
  • Patent Document 1 has been proposed (for example, Patent Document 1).
  • an object of the present invention is to provide a film forming apparatus that can reduce the volume of the processing space without hindering gas diffusion and can easily set the exhaust conductance.
  • a film forming apparatus for forming a predetermined film on a substrate by alternately supplying a first processing gas and a second processing gas with a purge gas being purged.
  • a substrate in which the substrate is deposited a substrate in which the substrate is deposited, a mounting table on which the substrate is placed in the processing vessel, and a substrate that is formed in the processing vessel.
  • a processing space a gas supply unit that supplies at least the first processing gas, the second processing gas, and the purge gas to the processing space, and an exhaust unit that exhausts the processing space.
  • a film forming apparatus is provided in which the gas supply unit supplies gas from the outer periphery of the processing space, and the exhaust unit exhausts upward from the center upper part of the processing space.
  • the apparatus further includes a cap member provided in the processing container so as to face the mounting table and having a recess for forming the processing space opened downward.
  • a processing space is formed by closing the opening, a plurality of gas discharge ports are formed in the outer peripheral portion of the concave portion of the cap member, and a gas discharge hole is formed in the center of the concave portion of the cap member; can do.
  • the apparatus further includes an elevating mechanism that raises and lowers the mounting table, and the substrate is transferred to the mounting table in a state where the mounting table is lowered by the lifting mechanism, and the mounting table is raised by the lifting mechanism. As a result, the opening of the cap member is closed to form the processing space.
  • the exhaust part includes an annular exhaust path provided so as to surround the outside of the processing space, and a gas exhaust passage for guiding the gas exhausted from the gas exhaust hole of the cap member radially to the exhaust path. It can be set as the structure which has.
  • the buffer chamber connected to the gas discharge hole and a gas line for supplying gas to the buffer chamber, and controls the supply of gas from the gas line to the buffer chamber to control the buffer chamber. By controlling the pressure, it is possible to control the exhaust conductance from the processing space.
  • a mounting table on which the substrate is mounted in the processing container, and in the processing container A processing space for performing a film forming process on the substrate; a gas supply unit that supplies a processing gas for the film forming process to the processing space; and an exhaust unit that exhausts the processing space;
  • a film forming apparatus is provided in which a processing gas is supplied from the outer periphery of the processing space, and the exhaust section exhausts upward from the center upper portion of the processing space.
  • FIG. 1 is a cross-sectional view showing a film forming apparatus according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing a supply / exhaust flow path member and a cap member of the film forming apparatus of FIG. 1
  • FIG. 4 is an exploded perspective view showing an air supply / exhaust flow path member and a cap member in FIG. 4
  • FIG. 4 is a bottom view showing the air supply / exhaust flow path member
  • FIG. 5 is a plan view showing the cap member.
  • the film forming apparatus 100 has a substantially cylindrical processing container 1 in which a processing space S held in a vacuum is formed.
  • the processing container 1 is made of aluminum or an aluminum alloy.
  • a susceptor 2 made of a ceramic such as AlN is provided in the lower part of the center of the processing chamber 1 as a mounting table for mounting (supporting) the wafer W as a substrate to be processed in a horizontal state.
  • the cylindrical support member 3 is arranged so as to be movable up and down while being supported by the cylindrical support member 3.
  • An inner ring 4 made of ceramics such as alumina for guiding the wafer W and defining a processing space is provided on the outer edge of the susceptor 2.
  • a cover ring 15 made of aluminum or an aluminum alloy is provided on the outer periphery of the inner ring 4 so as to engage with the inner ring 4.
  • the susceptor 2 is embedded with a heater 5 made of a refractory metal such as molybdenum.
  • the heater 5 is supplied with power from a heater power source (not shown), and a wafer W as a substrate to be processed is predetermined. For example, 350 to 500 ° C.
  • the processing container 1 has a lower container 1a having an opening in the upper part and a disc-shaped top plate 1b provided so as to close the opening of the lower container 1a.
  • An air supply / exhaust flow path member 12 made of a disc having a diameter larger than that of the susceptor 2 is attached to the center of the lower surface of the top plate 1b.
  • a cap member 13 having a disk shape with substantially the same diameter is attached to face the susceptor 2.
  • the supply / exhaust flow path member 12 and the cap member 13 are formed of aluminum or an aluminum alloy.
  • a concave portion 13 a having a disk shape slightly larger in diameter than the susceptor 2 is formed in the center portion of the lower surface of the cap member 13. Then, with the susceptor 2 in the raised processing position indicated by the solid line in FIG. 1, the outer peripheral portion 13 b of the recess 13 a comes into contact with the cover ring 15, thereby forming the processing space S surrounded by the recess 13 a and the susceptor 2. It is formed. At this time, since the susceptor 2 is heated to a high temperature by the heater 5 in order to heat the wafer W, the inner ring 4 is formed of ceramics in order to reduce the thermal effect on the cover ring 15 made of aluminum or aluminum alloy. ing. The detailed structures of the supply / exhaust flow path member 12 and the cap member 13 will be described later.
  • a gas supply unit 20 is provided above the top plate 1 b of the processing container 1.
  • Gas supply unit 20 includes a first processing TiCl 4 gas supply pipe 21 for supplying TiCl 4 gas as a gas, the second processing NH 3 gas for supplying NH 3 gas supply pipe 22 is a gas, the carrier gas
  • An N 2 gas supply pipe 23 that supplies N 2 gas that functions as a purge gas, a valve unit of these pipes and a collective valve unit 24 in which flow controllers such as a mass flow controller are collectively arranged, and a valve of the collective valve unit 24
  • a common pipe 25 for supplying a desired gas to the processing space S selectively. Control of valve operation at the time of gas supply is performed by the valve control unit 26.
  • the common pipe 25 is connected to a gas inlet 27 provided at the center of the top plate 1b. Then, gas is supplied from the gas introduction port 27 to the processing space S as described later.
  • An annular exhaust path 30 is formed around the air supply / exhaust flow path member 12 and the cap member 13.
  • the exhaust path 30 includes a duct member 33 provided between the side wall of the processing container 1 and the top plate 1b, an inner ring member 34 provided on the lower inner side of the duct member 33, and an air supply / exhaust It is formed so as to be surrounded by the flow path member 12 and the cap member 13.
  • a purge gas for purging the lower container 1 a flows between the inner ring member 34 and the cover ring 15. Accordingly, the outer periphery of the processing space S is surrounded by the exhaust path 30, and the gas in the processing space S is discharged to the exhaust path 30 as described later.
  • An exhaust pipe 31 is connected to the exhaust path 30, and an automatic pressure control valve (APC) 31a and an exhaust device 32 are connected to the exhaust pipe 31, and the opening of the automatic pressure control valve (APC) 31a is controlled.
  • APC automatic pressure control valve
  • APC automatic pressure control valve
  • the supporting member 3 penetrates the bottom surface of the lower container 1a of the processing container 1 and is supported by the elevating plate 41.
  • the elevating plate 41 is attached to the rod 42a of the elevating mechanism 42 and can be moved up and down by the elevating mechanism 42.
  • the susceptor 2 is moved to the processing position indicated by the solid line in FIG. It can be moved up and down between the transfer position indicated by the two-dot chain line.
  • a bellows 43 is airtightly joined between the elevating plate 41 and the lower container 1a.
  • a wafer lifting / lowering part 45 for lifting / lowering the wafer W with respect to the wafer mounting surface of the susceptor 2 is provided.
  • the wafer elevating unit 45 has a support plate 46 that is horizontally fixed to the bottom surface of the lower container 1a, and three (only two are shown in FIG. 1) wafer support pins 47 extending upward from the support plate 46. ing.
  • the susceptor 2 is provided with an insertion hole 2a through which the wafer support pins 47 are inserted.
  • the wafer support pins 47 are inserted into the insertion holes 2a of the susceptor 2, and the upper ends thereof protrude from the wafer placement surface of the susceptor 2,
  • the wafer W can be transferred by a wafer transfer device (not shown).
  • a loading / unloading port 48 for loading and unloading the wafer W is provided on the side wall of the lower container 1a of the processing chamber 1, and the loading / unloading port 48 can be opened and closed by a gate valve 49, and a vacuum transfer chamber. (Not shown).
  • the loading / unloading port 48 is formed at a position where the wafer W can be transferred to the susceptor 2 by a transfer device (not shown) when the susceptor 2 is at the transfer position.
  • a gas inflow hole 61 is formed so as to extend vertically downward from the gas inlet 27 (see FIG. 1).
  • a gas inlet 62 is provided on the upper surface of the air supply / exhaust flow path member 12 so as to correspond to the gas inflow hole 61, and a plurality of gas inlets 62 (8 in the figure) are provided inside the air supply / exhaust flow path member 12.
  • the horizontal gas flow path 63 of the book extends horizontally and radially outward (see FIGS. 2 and 4).
  • a vertical gas channel 64 extending vertically downward from the outer end of the gas horizontal gas channel 63 toward the cap member 13 is formed.
  • the vertical gas flow path 64 opens on the lower surface of the air supply / exhaust flow path member 12.
  • a plurality (eight in the figure) of gas introducing passages 65 are provided on the outer peripheral portion of the upper surface of the cap member 13 so as to correspond to the vertical gas passages 64 of the air supply / exhaust passage member 12.
  • An annular gas channel 66 is provided inside the cap member 13 (see FIGS. 2 and 3), and the gas introduction channel 65 is connected to the annular gas channel 66.
  • a plurality (32 in the figure) of gas discharge ports 67 that are opened from the annular gas flow channel 66 to positions outside the wafer W on the outer peripheral portion of the concave portion 13a of the cap member 13 are equally provided (FIG. 2). 3, 5).
  • the gas introduced from the gas supply unit 20 via the gas inlet 27 is the gas inlet 61, the gas inlet 62, the horizontal gas passage 63, the vertical gas flow.
  • the gas introduction passage 65, the annular gas passage 66, and the gas discharge port 67 the gas is uniformly supplied to the processing space S from the outer periphery.
  • a gas discharge hole 68 is formed at the center of the lower surface of the cap member 13 (the center of the recess 13a). Therefore, the gas supplied to the processing space S from the plurality of gas discharge ports 67 on the outer peripheral upper surface is discharged upward from the gas discharge hole 68 at the upper center of the processing space S through the upper surface of the wafer W.
  • the gas discharge hole 68 has an inverted mortar-shaped lower portion 68a and a small-diameter upper portion 68b.
  • the shape of the gas discharge hole 68 is not limited to this, and may be another shape such as a simple columnar shape.
  • a plurality of gas discharge ports 67 provided along the outer periphery of the processing space S are discharged, and gas is discharged from the central upper portion of the processing space S (FIGS. 2 and 3). 5).
  • a plurality (eight in the figure) of gas discharge passages 71 are provided radially on the lower surface of the air supply / exhaust passage member 12, and the outer peripheral ends of these gas discharge passages 71 face the annular exhaust passage 30. It is like that. Therefore, the gas discharged from the gas discharge hole 68 is guided to the exhaust passage 30 through the gas discharge passage 71 without causing a bias, and is discharged from the exhaust device 32 through the exhaust pipe 31.
  • Each component of the film forming apparatus 100 such as a valve control unit 26, an elevating mechanism 42, a heater power source (not shown) for heating the heater 5, an automatic pressure control valve (APC) 31a, an exhaust device 32, a gate valve 49, etc. Controlled by the overall control unit 80.
  • the overall control unit 80 is executed by the film forming apparatus 100, a controller including a microprocessor (computer), a keyboard for an operator to perform input operations, a user interface including a display for displaying the operating status of the film forming apparatus, and the like.
  • a storage unit storing a control program for realizing various processes performed by the controller and a processing recipe for causing the film forming apparatus 100 to execute a predetermined process according to the processing conditions. Yes.
  • the processing recipe and the like are stored in a storage medium, and are read from the storage medium and executed in the storage unit.
  • the storage medium may be a hard disk or a semiconductor memory, or may be a portable medium such as a CD-ROM, DVD, or flash memory.
  • Recipes and the like are read from the storage unit according to instructions from the user interface as necessary, and are executed by the controller, so that desired processing in the film forming apparatus 100 is performed under the control of the controller.
  • the gate valve 49 is opened and the vacuum transfer is performed with the susceptor 2 placed at the transfer position.
  • the wafer W is transferred from the chamber to the wafer support pins 47 by the transfer device, the transfer device is retracted, and the gate valve 49 is closed.
  • the lifting mechanism 42 raises the susceptor 2, and the cover ring 15 attached to the outer peripheral portion of the susceptor 2 is brought into contact with the outer peripheral portion 13 b of the cap member 13, thereby forming a processing space formed by the recess 13 a and the susceptor 2.
  • S is formed.
  • the wafer W is heated to a predetermined temperature, for example, 350 to 500 ° C. by the heater 5 provided in the susceptor 2.
  • the pressure of the processing space S is controlled by controlling the opening of the automatic pressure control valve (APC) 31a while flowing N 2 gas as a purge gas from the gas supply unit 20, and when the pressure becomes stable, ALD
  • ALD automatic pressure control valve
  • the wafer W by supplying step of adsorbing the TiCl 4 gas onto the wafer W by supplying TiCl 4 gas, purging the processing space S by supplying N 2 gas, NH 3 gas
  • the process of reducing the upper TiCl 4 to form an extremely thin TiN film and the process of purging the processing space S by supplying N 2 gas are repeated a predetermined number of times.
  • the gas switching at this time is realized by controlling the valve by the valve control unit 26.
  • the pressure in the processing space S in each step is, for example, 2 to 4 Torr in the step of adsorbing TiCl 4 gas, 10 to 15 Torr in the step of supplying Ti 3 4 by reducing NH 3 gas, and 2 in the purge step, for example. Set to ⁇ 4 Torr.
  • a TiN film having a predetermined thickness is formed on the wafer W by repeating the supply of TiCl 4 gas and the supply of NH 3 gas with the purge interposed therebetween.
  • the gas is discharged from a plurality of gas discharge ports 67 provided evenly on the outer periphery of the processing space S of the cap member 13 and discharged from the gas discharge hole 68 at the upper center of the processing space S.
  • the wafer W is uniformly supplied in the dispersed state, and the gas can be supplied to the wafer in the dispersed state without using a special dispersion mechanism.
  • the gas discharge port 67 is provided outside and above the wafer W, the gas flow is not directly injected onto the wafer W, but flows along the surface of the wafer W and is uniform with respect to the wafer W. Can be supplied with gas.
  • gas can be supplied in a state of essentially good dispersibility, and a mechanism for dispersing gas in the central portion of the processing space as in the prior art is unnecessary, so that the processing space
  • the volume of S can be made significantly smaller than before, and the gas supply and exhaust time can be shortened. For this reason, it becomes possible to respond to the request of a high-speed process.
  • the amount of gas used can be saved.
  • the conductance of the exhaust can be set by the diameter and shape of the gas discharge hole 68.
  • the exhaust conductance can be easily set as compared with. Further, by exhausting from the center upper portion in this way, the influence on the exhaust conductance due to film formation can be reduced, and the exhaust can be performed uniformly without causing a bias.
  • the processing space S can be formed by an extremely simple operation of raising the susceptor 2 and closing the opening of the concave portion 13a formed in the cap member 13, so that efficient processing can be performed. Since the processing space S that is narrow and closed is formed and the film formation process is performed in the process space S, the processing efficiency is high. In addition, since the film forming process is performed in the space above the susceptor 2 as described above, the gas does not contact the lower part of the susceptor 2, and film formation or corrosion occurs on the wall or member below the susceptor 2. Can be prevented.
  • the gas supply unit supplies gas from the outer periphery of the processing space, and the gas exhaust unit exhausts upward from the center upper portion of the processing space, so that the gas is uniformly distributed.
  • the gas can be supplied to the substrate in a dispersed state without using a special dispersion mechanism. Further, there is no need for a mechanism for dispersing gas in the central portion of the processing space as in the prior art. Since gas can be supplied in such a state with good dispersibility and a mechanism for dispersing the gas is not necessary, the volume of the processing space can be made significantly smaller than before, and the gas supply and exhaust time can be reduced. Can be shortened. For this reason, it becomes possible to respond to the request of a high-speed process. In addition, the amount of gas used can be saved.
  • the exhaust conductance can be set according to the diameter and shape of the gas discharge hole, and the exhaust conductance can be set compared to the conventional case where gas is discharged from the outer periphery. Can be easily performed. Further, by exhausting from the center upper portion in this way, the influence on the exhaust conductance due to film formation can be reduced.
  • the conductance is changed between adsorption and reaction (reduction) and gas replacement.
  • FIG. 6 is a cross-sectional view showing a main part of a film forming apparatus according to the second embodiment of the present invention.
  • the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • a buffer chamber 91 is provided around the gas discharge hole 68 of the cap member 13, and the buffer chamber 91 and the gas discharge hole 68 are connected by a gas flow path 92.
  • N 2 gas or NH 3 gas is introduced from a separate gas line 93.
  • the pressure of the buffer chamber 91 can be arbitrarily controlled by controlling the supply of gas from the gas line 93. Therefore, at the time of adsorption and reaction (reduction), as shown in FIG. 7A, the differential pressure between the buffer chamber 91 and the processing space S is decreased to reduce the conductance, thereby increasing the process gas containment effect. On the other hand, when the purge gas is introduced to replace the gas, as shown in FIG. 7B, the differential pressure between the buffer chamber 91 and the processing space S is increased to increase the conductance. Can be made possible.
  • the method of providing the buffer chamber of this embodiment and controlling conductance is possible irrespective of the position of a gas exhaust hole.
  • the present invention can be similarly applied to a conventional film forming apparatus that introduces gas from the center and exhausts it to the outer periphery as shown in FIG. That is, in the film forming apparatus of FIG. 8, the cap member 13 ′ is configured to form an inverted mortar-shaped processing space S ′, and the gas is introduced by inserting the gas introduction member 101 having the gas dispersion mechanism from the upper center.
  • the exhaust line 102 is evenly arranged on the outer peripheral side of the processing space S ′ and exhausted to an outer exhaust path (not shown).
  • An annular buffer chamber 103 is provided in the middle of the exhaust line 102, a gas line 104 is connected to the buffer chamber 103, and N 2 gas or NH 3 gas is introduced into the buffer chamber 103 via the gas line 104. Pressure control can be performed. Even with such a configuration, the same effect as that of the apparatus of FIG. 6 can be obtained.
  • this invention can be variously deformed, without being limited to the said embodiment.
  • a TiN film is formed by ALD using TiCl 4 gas and NH 3 gas has been described.
  • the type of gas and the material of the film are not limited at all.
  • the present invention can be applied to ALD film formation using various gases.
  • the purge gas may be appropriately selected according to the processing gas, and is not particularly limited. Needless to say, the gas is not limited to two types but can be applied to ALD of three or more types of gases. It can also be applied to normal CVD other than ALD.
  • the gas is discharged from the gas discharge port provided outside the wafer on the outer periphery of the processing space.
  • the gas discharge port may be provided at a position where the wafer exists.
  • the several gas discharge port was arrange
  • a semiconductor wafer is described as an example of a substrate to be processed.
  • the present invention is not limited to a semiconductor wafer, and the present invention is also applied to a glass substrate, a ceramic substrate, and the like used for an FPD (flat panel display) such as a liquid crystal display device.
  • FPD flat panel display
  • the invention can be applied.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de formation de film qui forme un film prédéterminé sur un substrat (W) en fournissant de façon alternée un premier gaz de traitement et un deuxième gaz de traitement ayant une purge entre eux, ladite purge utilisant un gaz de purge. L'appareil de formation de film est pourvu de : un récipient de traitement (1), dans lequel le substrat (W) est contenu et un traitement de formation de film est effectué sur le substrat (W) ; une table de placement (2) sur laquelle le substrat est placé dans le récipient de traitement (1) ; un espace de traitement (S) pour former le film sur le substrat (W), ledit espace de traitement étant formé dans le récipient de traitement (1) ; une unité d'alimentation de gaz (20), qui alimente au moins le premier gaz de traitement, le deuxième gaz de traitement, et le gaz de purge vers l'espace de traitement (S); et des unités de libération de gaz (71, 30, 31, 32), par l'intermédiaire desquelles du gaz est libéré depuis l'espace de traitement (S). L'unité d'alimentation de gaz (20) alimente le gaz depuis la circonférence externe de l'espace de traitement (S), et les unités de libération de gaz (71, 30, 31, 32) libèrent le gaz vers le haut depuis la partie centrale supérieure de l'espace de traitement (S).
PCT/JP2012/059733 2011-05-10 2012-04-09 Appareil de formation de film WO2012153591A1 (fr)

Applications Claiming Priority (2)

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JP2011105381A JP2012237026A (ja) 2011-05-10 2011-05-10 成膜装置
JP2011-105381 2011-05-10

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CN104073780A (zh) * 2013-03-29 2014-10-01 东京毅力科创株式会社 成膜装置、气体供给装置以及成膜方法

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CN104250725B (zh) * 2013-06-26 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 预沉积工艺、扩散工艺及扩散设备
JP6516436B2 (ja) 2014-10-24 2019-05-22 東京エレクトロン株式会社 成膜装置及び成膜方法
JP6438751B2 (ja) * 2014-12-01 2018-12-19 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2017017821A1 (fr) 2015-07-29 2017-02-02 堺ディスプレイプロダクト株式会社 Broche de support et dispositif de formation de film
JP7529764B2 (ja) * 2020-03-17 2024-08-06 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

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