WO2015114977A1 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

Info

Publication number
WO2015114977A1
WO2015114977A1 PCT/JP2014/083380 JP2014083380W WO2015114977A1 WO 2015114977 A1 WO2015114977 A1 WO 2015114977A1 JP 2014083380 W JP2014083380 W JP 2014083380W WO 2015114977 A1 WO2015114977 A1 WO 2015114977A1
Authority
WO
WIPO (PCT)
Prior art keywords
side wall
main body
processing
cylindrical portion
mounting table
Prior art date
Application number
PCT/JP2014/083380
Other languages
English (en)
Japanese (ja)
Inventor
洋平 緑川
厚士 田中
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2015114977A1 publication Critical patent/WO2015114977A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Definitions

  • the present invention relates to a substrate processing apparatus that performs substrate processing using a predetermined processing gas.
  • a silicon oxide film (SiO 2 film) on the surface of a semiconductor wafer (hereinafter referred to as “wafer”) as an object to be processed is treated with hydrogen fluoride (HF) gas and ammonia ( In this process, NH 3 ) gas is supplied and a product is generated by reacting these gases with a silicon oxide film (for example, Patent Document 1).
  • HF hydrogen fluoride
  • NH 3 ammonia
  • the product generated on the wafer surface by COR is sublimated by performing a heat treatment in the next step, whereby the silicon oxide film is removed from the wafer surface.
  • a wafer is placed in a processing container held in a vacuum, and processing gas is supplied from above the wafer.
  • a heating mechanism such as a heater is built in the side wall of the processing container in order to prevent the product from adhering to the processing container due to the COR process.
  • the uniformity of the flow of processing gas to the wafer surface and the uniformity of the wafer temperature affect the uniformity of the wafer processing.
  • various devices are arranged near the center of the bottom of the processing container, the exhaust in the processing container is performed from the vicinity of the outer periphery of the bottom of the processing container. As a result, the airflow in the processing container is uneven, and it is difficult to uniformly supply the processing gas into the wafer surface.
  • the temperature of the side wall of the processing container is not uniform due to the bias of the air flow in the processing container, and as a result, the wafer temperature is also biased due to the influence of the temperature of the side wall of the processing container. Therefore, sufficient uniformity of processing within the wafer surface has not been ensured.
  • the present invention has been made in view of such a point, and an object thereof is to improve the uniformity of the gas flow in the processing vessel and the uniformity of the temperature in the processing vessel.
  • the present invention is a substrate processing apparatus for processing a substrate, wherein a processing container for hermetically storing a substrate, a mounting table for mounting a substrate in the processing container, And an exhaust mechanism for exhausting the inside of the processing container.
  • the processing container includes a bottomed main body having an open upper surface, a flange that hermetically closes the upper surface of the main body, and a cylinder having a side wall that is smaller in diameter than the main body and larger in diameter than the outer surface of the mounting table.
  • a cylindrical portion having a shape, and a lid provided on an upper surface of the flange and hermetically closing the opening of the main body.
  • a groove portion that is recessed downward is formed on the upper surface of the flange, a heater is disposed in the groove portion, a side wall of the cylindrical portion is formed to extend downward from an upper surface of the mounting table, and the side wall A locking member that protrudes toward the center of the side wall is provided at the lower end of the side wall, and a baffle plate having a plurality of openings is disposed on the top surface of the locking member.
  • the locking member is provided on the cylindrical portion of the processing container and the baffle plate is disposed on the locking member, when the processing container is evacuated by the exhaust mechanism, The gas flow in the vicinity of the outer periphery of the mounting table can be made uniform. Therefore, the processing gas can be supplied uniformly within the substrate surface.
  • the heater is arrange
  • the uniformity of the gas flow in the processing vessel and the uniformity of the temperature in the processing vessel can be improved.
  • FIG. 1 is a longitudinal sectional view schematically showing a substrate processing apparatus 1 according to the present embodiment.
  • the substrate processing apparatus 1 is a COR processing apparatus that performs a COR process on the wafer W will be described as an example.
  • the substrate processing apparatus 1 includes, for example, a processing container 10 configured to be airtight and a mounting table 11 on which a wafer W is mounted in the processing container 10 as illustrated in FIG.
  • the processing container 10 includes a main body portion 20 formed in a substantially cylindrical shape with a bottom having an open upper surface, a cylindrical portion 22 having a flange 21 that hermetically closes the upper surface of the main body portion 20, and an opening of the main body portion 20.
  • the lid body 23 is closed.
  • the mounting table 11 is formed in a substantially cylindrical shape, and includes an upper table 11a having a mounting surface on which the wafer W is mounted, and a lower table 11b that supports the upper table 11a.
  • a temperature adjustment mechanism 30 for adjusting the temperature of the wafer W is built in the upper table 11a.
  • the temperature adjustment mechanism 30 adjusts the temperature of the mounting table 11 by circulating a coolant such as water, and controls the temperature of the wafer W on the mounting table 11.
  • the lower surface of the lower base 11 b is supported by a support member 31 provided on the bottom upper surface of the main body 20.
  • a loading / unloading port 20 a for loading / unloading the wafer W to / from the outside of the substrate processing apparatus 1 is provided on the side surface of the main body 20 of the processing container 10.
  • the loading / unloading port 20 a is opened and closed by a gate valve 32.
  • a heater (not shown) is incorporated in the side wall of the main body 20, and the temperature of the main body 20 is maintained at, for example, 90 ° C. or more by being supplied with power from a power source (not shown). Thereby, the adhesion and deposition of the reaction product on the main body 20 can be suppressed during the COR process.
  • a cylindrical side wall 40 extends vertically downward from the inner surface of the flange 21 of the cylindrical portion 22 of the processing vessel 10.
  • the diameter of the side wall 40 is set to be smaller than that of the main body 20 and larger than that of the outer surface of the mounting table 11.
  • the lower end portion of the side wall 40 extends to a height below the lower surface of the lower base 11 b of the mounting table 11. Therefore, the side wall 40 of the cylindrical portion 22 is concentric with the mounting table 11 and the main body unit 20 and has a configuration that surrounds the entire outer periphery of the mounting table 11.
  • an opening 40 a for carrying in / out the wafer W is formed at a position corresponding to the carry-in / out port 20 a of the processing container 10 on the side wall 40 of the cylindrical portion 22.
  • a rectangular groove portion 41 that is recessed downward is formed over the entire circumference of the flange 21.
  • a sheath heater 42 having a substantially rectangular cross section is disposed in the groove 41.
  • the sheath heater 42 is supplied with power from a power source (not shown), so that the cylindrical portion 22 is maintained at 90 ° C. or more like the main body portion 20.
  • a material having high thermal conductivity for example, a material having a thermal conductivity of approximately 200 W / m ° C. or higher is used in order to uniformly heat the entire cylindrical portion 22, and in the present embodiment, for example, It is made of aluminum.
  • the thermal conductivity of aluminum is about 238 W / m ° C.
  • a locking member 43 that protrudes horizontally toward the center direction of the side wall 40, that is, the outer surface of the mounting table 11 is provided.
  • a disc-shaped baffle plate 44 provided so as to cover the lower surface of the lower table 11 b of the mounting table 11 is supported on the upper surface of the locking member 43.
  • a circular opening 44 a is formed in the vicinity of the outer peripheral portion of the baffle plate 44, for example, at a position where it does not overlap with the locking member 43 and the mounting table 11 in plan view.
  • another opening 44 b is formed at a position corresponding to the support member 31 in the baffle plate 44 in order to avoid interference with the support member 31.
  • the thickness of the baffle plate 44 is adjusted so that the upper surface thereof is below the lower surface of the lower table 11 b of the mounting table 11.
  • the outer diameter of the baffle plate 44 is formed to be approximately the same as or smaller than the inner surface of the side wall 40 of the cylindrical portion 22, for example.
  • the baffle plate 44 is formed to a size that fits inside the side wall 40 of the cylindrical portion 22.
  • the baffle plate 44 is also formed of a material having a thermal conductivity of approximately 200 W / m ° C. or more, for example, as with the cylindrical portion 22. Therefore, the baffle plate 44 itself is also heated by the heated cylindrical portion 22. Further, since the baffle plate 44 is formed so as to cover the lower table 11b of the mounting table 11, the lower surface of the lower table 11b of the mounting table 11 is also heated over the entire surface by the baffle plate 44.
  • the entire outer peripheral portion and lower surface of the mounting table 11 are heated by the cylindrical portion 22 that surrounds the entire outer periphery of the mounting table 11 and the baffle plate 44 that covers the lower table 11b of the mounting table 11, so that the COR processing is performed. At this time, adhesion and deposition of reaction products on the baffle plate 44 and the mounting table 11 can be suppressed.
  • the shower head 50 is provided on the lower surface of the lid 23 of the processing container 10 so as to face the mounting table 11.
  • the shower head 50 has, for example, a substantially cylindrical frame 51 that is open on the lower surface and supported by the lower surface of the lid body 23, and is fitted into an inner surface of the frame body 51, and is separated from a ceiling portion of the frame body 51 by a predetermined distance.
  • a substantially disc-shaped shower plate 52 provided apart from each other, and a plate 53 provided in parallel to the shower plate 52 between the shower plate 52 and the frame 51 are provided.
  • the shower plate 52 is provided with a plurality of openings 52a penetrating the shower plate 52 in the thickness direction.
  • a first space 54 having a predetermined distance is formed between the ceiling portion of the frame 51 and the upper surface of the plate 53.
  • a second space 55 of a predetermined distance is formed between the lower surface of the plate 53 and the upper surface of the shower plate 52.
  • the plate 53 has a plurality of gas flow paths 60 penetrating the plate 53 in the thickness direction.
  • the number of the gas flow paths 60 is approximately half that of the openings 52 a of the shower plate 52.
  • the gas flow path 60 extends to the upper end surface of the shower plate 52 below the plate 53 and is connected to the upper end portion of the opening 52a. Therefore, the interior of the gas channel 60 and the opening 52 a connected to the gas channel 60 is isolated from the second space 55.
  • the shower plate 52 and the plate 53 are made of a metal such as aluminum, for example.
  • a first gas supply source 71 is connected to the first space 54 between the lower surface of the frame 51 and the plate 53 via a first gas supply pipe 70.
  • the first gas supply source 71 is configured to be able to supply a mixed gas of hydrogen fluoride (HF) gas, which is a reaction gas, and argon (Ar) gas, which is a dilution gas, as a first processing gas.
  • the first gas supply pipe 70 is provided with a flow rate adjusting mechanism 72 that adjusts the supply amount of the first processing gas.
  • the first processing gas supplied from the first gas supply source 71 is supplied into the processing container 10 through the first space 54, the gas flow path 60 of the plate 53, and the opening 52 a of the shower plate 52.
  • a second gas supply source 74 is also connected to the second space 55 via a second gas supply pipe 73.
  • the second gas supply source 74 is configured to be able to supply a mixed gas of ammonia (NH 3 ) gas that is a reaction gas and nitrogen (N 2 ) gas that is a dilution gas as a second processing gas.
  • the second gas supply pipe 73 is provided with a flow rate adjusting mechanism 75 that adjusts the supply amount of the second processing gas.
  • the dilution gas is not limited to the present embodiment, and for example, only argon gas, only nitrogen gas, or other inert gas may be used.
  • the second processing gas supplied from the second gas supply source 74 is supplied into the processing container 10 through the second space 55 and the opening 52 a of the shower plate 52. Therefore, the first processing gas and the second processing gas are mixed for the first time at a position below the shower plate 52 in the processing container 10.
  • An exhaust mechanism 80 for exhausting the inside of the processing container 10 is connected via an exhaust pipe 81 to the bottom surface of the main body 20 of the processing container 10 and outside the mounting table 11.
  • the exhaust pipe 81 is provided with an adjustment valve 82 that adjusts the amount of exhaust by the exhaust mechanism 80.
  • a support pin unit 83 is provided on the bottom surface of the main body 20 of the processing container 10 and below the mounting table 11.
  • the support pin unit 83 includes a support pin (not shown) and an elevating mechanism for raising and lowering the support pin, and the mounting table 11 is connected to a transfer mechanism (not shown) provided outside the substrate processing apparatus 1. It is used when transferring the wafer W above.
  • the substrate processing apparatus 1 is provided with a control device 100 as shown in FIG.
  • the control device 100 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the processing of the wafer W in the substrate processing apparatus 1.
  • the program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control device 100 from the storage medium.
  • a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card.
  • the substrate processing apparatus 1 is configured as described above. Next, processing performed using the substrate processing apparatus 1 will be described.
  • the processing vessel 10 Prior to wafer processing, the processing vessel 10 is heated to about 90 ° C. by the heater built in the side wall of the main body 20 and the sheath heater 42 provided in the cylindrical portion 22. Next, the wafer W having a silicon oxide film on the surface is placed on the mounting table 11 in the processing container 10 by a transfer mechanism (not shown) provided outside the substrate processing apparatus 1.
  • the gate valve 32 is closed, the inside of the processing chamber 10 is exhausted to a predetermined pressure by the exhaust mechanism 80, and the wafer W on the mounting table 11 is heated to a predetermined temperature by the temperature adjustment mechanism 30, for example, 20 in this embodiment. Adjust to -40 ° C.
  • the first processing gas and the second processing gas are supplied into the processing container 10 from the first gas supply source 71 and the second gas supply source 74, respectively, and the COR processing is performed on the wafer W. .
  • the silicon oxide film on the surface of the wafer W chemically reacts with hydrogen fluoride gas and ammonia gas, and as a reaction product, ammonium fluorosilicate (AFS) or water is generated and held on the surface of the wafer W. It becomes a state.
  • AFS ammonium fluorosilicate
  • the first processing gas and the second processing gas are uniformly supplied into the wafer surface via the shower plate 52. Further, since the supplied processing gas is exhausted through the opening 44 a of the baffle plate 44 by the exhaust mechanism 80, a uniform processing gas flow is formed in the space above the baffle plate 44. In addition, since the gas flow in the processing container 10 is made uniform, the cylindrical portion 22 heated by the sheath heater 42 does not have temperature unevenness due to the knitting flow of the gas flow. In-plane uniformity can be maintained. As a result, the inside of the wafer W can be uniformly COR processed.
  • the heat transfer from the cylindrical portion 22 also heats the baffle plate 44 and the vicinity of the outer periphery of the mounting table 11, so that adhesion and volume of reaction products to the baffle plate 44 and the mounting table 11 are suppressed during the COR process.
  • the gate valve 32 is opened, and the wafer W on the mounting table 11 is unloaded from the substrate processing apparatus 1 from a wafer transfer mechanism (not shown). Thereafter, the wafer W is heated by a heating device provided outside the substrate processing apparatus 1, and a reaction product generated by the COR process is vaporized and removed. Thereby, a series of wafer processing is completed.
  • the locking member 43 is provided at the lower end of the cylindrical portion 22 of the processing container 10, and the baffle plate 44 having the opening 44 a is disposed on the locking member 43.
  • the flow of the processing gas in the container 10, particularly in the vicinity of the outer peripheral portion of the mounting table 11, can be made uniform. Therefore, the processing gas can be supplied uniformly within the wafer surface, and uniform COR processing can be performed.
  • the cylindrical portion 22 is uniformly heated by the sheath heater 42 provided on the flange 21 of the cylindrical portion 22, it is possible to make the ambient temperature of the wafer W uniform and to suppress temperature unevenness in the wafer W surface.
  • the flow of the processing gas flowing inside the cylindrical portion 22 is made uniform by the baffle plate 44, temperature unevenness due to the knitting flow of the processing gas does not occur. Therefore, the temperature uniformity in the wafer W plane can be improved also from this point.
  • the sheath heater 42 is provided on the upper surface of the flange 21, for example, when performing maintenance or replacement work of the sheath heater 42, the sheath heater 42 can be accessed only by opening the lid 23. Accordingly, it is possible to reduce time and work burden due to maintenance and the like.
  • the sheath heater 42 is provided over the entire circumference of the upper surface of the flange 21 .
  • the sheath heater 42 and the groove portion 41 are not necessarily provided with the flange 21. It is not necessary to provide over the entire circumference.
  • the shape of the groove 41 is not limited to the present embodiment, and the cross section may be, for example, a semicircular shape or a triangular shape.
  • the locking member 43 is arranged on the upper surface of the baffle plate 44.
  • the support method of the baffle plate 44 is not limited to this embodiment, and the locking member 43 and the baffle plate As long as the heat of the sheath heater 42 is transmitted to the baffle plate 44 by appropriately contacting with 44, the structure can be freely set.
  • the baffle plate 44 may be screwed to the lower surface of the locking member 43, or the baffle plate 44 may be screwed directly to the lower end portion of the side wall 40 of the cylindrical portion 22 without providing the locking member 43. You may do it.
  • the baffle plate 44 and the cylindrical portion 22 may be configured integrally.
  • the exhaust mechanism 80 is connected to the bottom surface of the processing container 10, but the arrangement of the exhaust mechanism 80 is not limited to the contents of the present embodiment, and may be below the baffle plate 44. For example, you may connect to the side surface of the main-body part 20, for example. Even in such a case, since the gas flow in the space above the baffle plate 44 is rectified by the baffle plate 44, the degree of freedom of installation of the exhaust mechanism 80 is improved.
  • the opening 44a of the baffle plate 44 does not necessarily need to be circular.
  • the opening 44a has a rectangular shape, a slit shape, or an arc-shaped elongated hole concentric with the baffle plate 44 as shown in FIG. It may be the opening 90 and can be arbitrarily set according to the content of the processing performed in the processing container 10.
  • the exhaust flow rate from the opening 44a close to the exhaust pipe 81 is larger than that of the opening 44a far from the exhaust pipe 81, and there is a tendency that the flow of exhaust in the processing container 10 is slightly biased. Therefore, the size of the opening 44a formed in the baffle plate 44 is not necessarily the same, and the size of each opening 44a may be appropriately adjusted in order to make the gas flow in the processing vessel 10 more uniform. .
  • an opening 91 smaller than the opening 44a is formed instead of the opening 44a at a position close to the exhaust pipe 81, and exhaust from the opening 91 is restricted.
  • the exhaust between the openings 44a and 91 may be uniform.
  • an opening 92 larger than the opening 44a is formed at a position far from the exhaust pipe 81 so that the exhaust can easily flow into the opening 92, so that the exhaust between the openings 44a and 92 is uniform. It may be made to become.
  • the size of the opening 44a may be changed stepwise in accordance with the distance from the exhaust pipe 81.
  • the opening 44a and the other opening 44b are not necessarily provided separately.
  • the opening 44a avoids interference with the support member 31 and rectifies the exhaust in the processing container 10.
  • the opening 93 may be formed integrally.
  • a notch 100 is formed in a part of the baffle plate 44 instead of the opening, and processing is performed via the notch 100.
  • the inside of the container 10 may be exhausted.
  • this inventor measured the temperature distribution in the processing container 10 when performing the COR process in the substrate processing apparatus 1 concerning this Embodiment as a confirmation test. The result is shown in FIG. In FIG. 9, the temperature distribution is represented by contour lines, and one pitch of the contour lines is approximately 0.3 ° C.
  • the in-plane temperature difference of the wafer W is suppressed to about 3 ° C. at the maximum and the minimum.
  • the present inventors performed a similar COR process using a conventional substrate processing apparatus that does not have the cylindrical portion 22, the sheath heater 42, and the baffle plate 44, the tendency of the temperature distribution in the processing container is shown in FIG.
  • the in-plane temperature difference of the wafer W is about 15 ° C. Therefore, it can be confirmed from this result that the uniformity of the temperature in the processing container 10 is improved by the cylindrical portion 22 including the baffle plate 44 and the sheath heater 42.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat qui comprend un mécanisme d'évacuation pour la mise sous vide de l'intérieur d'un récipient de traitement. Le récipient de traitement comprend : une partie de corps principal à fond munie d'une face supérieure ouverte ; une partie cylindrique de forme cylindrique munie d'une bride pour fermer hermétiquement la face supérieure de la partie de corps principal et d'une paroi latérale dont le diamètre est inférieur à celui de la partie de corps principal et dont le diamètre est supérieur à celui de la face extérieure d'un palier ; et, se trouvant sur la face supérieure de la bride, un corps de couvercle pour fermer hermétiquement l'ouverture de la partie de corps principal. Une portion en rainure enfoncée vers le bas en forme de U est formée sur la face supérieure de la bride et un élément chauffant est disposé dans ladite portion en rainure. La paroi latérale de la partie cylindrique est formée de manière à s'étendre plus bas que la face supérieure du palier. Un élément de verrouillage qui fait saillie en direction du centre de la paroi latérale se trouve à l'extrémité inférieure de la paroi latérale. Une plaque de déflexion dans laquelle est formée une pluralité de trous se trouve sur la face supérieure de l'élément de verrouillage.
PCT/JP2014/083380 2014-01-29 2014-12-17 Dispositif de traitement de substrat WO2015114977A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014014178A JP2015142016A (ja) 2014-01-29 2014-01-29 基板処理装置
JP2014-014178 2014-01-29

Publications (1)

Publication Number Publication Date
WO2015114977A1 true WO2015114977A1 (fr) 2015-08-06

Family

ID=53756571

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/083380 WO2015114977A1 (fr) 2014-01-29 2014-12-17 Dispositif de traitement de substrat

Country Status (3)

Country Link
JP (1) JP2015142016A (fr)
TW (1) TW201539618A (fr)
WO (1) WO2015114977A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111095484A (zh) * 2017-09-19 2020-05-01 无尽电子有限公司 原位干洗方法和装置
JP2020188194A (ja) * 2019-05-16 2020-11-19 東京エレクトロン株式会社 プラズマ処理装置
JP2020534707A (ja) * 2017-09-19 2020-11-26 ムシン エレクトロニクス カンパニー リミテッド 基板処理方法及び装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111954923A (zh) * 2018-03-23 2020-11-17 东京毅力科创株式会社 加热处理装置和加热处理方法
JP7479236B2 (ja) 2020-07-31 2024-05-08 東京エレクトロン株式会社 基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003510810A (ja) * 1999-09-23 2003-03-18 ラム リサーチ コーポレーション タイル張りセラミックライナを有する半導体処理装置
WO2009013984A1 (fr) * 2007-07-24 2009-01-29 Kabushiki Kaisha Toshiba ÉLÉMENT AlN POUR UN APPAREIL DE DÉPÔT EN PHASE VAPEUR DE COMPOSÉ SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE COMPOSÉ SEMI-CONDUCTEUR UTILISANT CELUI-CI
JP2010016319A (ja) * 2008-07-07 2010-01-21 Tokyo Electron Ltd プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
JP2011249470A (ja) * 2010-05-25 2011-12-08 Tokyo Electron Ltd プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003510810A (ja) * 1999-09-23 2003-03-18 ラム リサーチ コーポレーション タイル張りセラミックライナを有する半導体処理装置
WO2009013984A1 (fr) * 2007-07-24 2009-01-29 Kabushiki Kaisha Toshiba ÉLÉMENT AlN POUR UN APPAREIL DE DÉPÔT EN PHASE VAPEUR DE COMPOSÉ SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE COMPOSÉ SEMI-CONDUCTEUR UTILISANT CELUI-CI
JP2010016319A (ja) * 2008-07-07 2010-01-21 Tokyo Electron Ltd プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
JP2011249470A (ja) * 2010-05-25 2011-12-08 Tokyo Electron Ltd プラズマ処理装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111095484A (zh) * 2017-09-19 2020-05-01 无尽电子有限公司 原位干洗方法和装置
JP2020534708A (ja) * 2017-09-19 2020-11-26 ムシン エレクトロニクス カンパニー リミテッド インシチュードライ洗浄方法及び装置
JP2020534707A (ja) * 2017-09-19 2020-11-26 ムシン エレクトロニクス カンパニー リミテッド 基板処理方法及び装置
CN111095484B (zh) * 2017-09-19 2023-08-01 艾斯宜株式会社 原位干洗方法和装置
JP2020188194A (ja) * 2019-05-16 2020-11-19 東京エレクトロン株式会社 プラズマ処理装置
JP7232705B2 (ja) 2019-05-16 2023-03-03 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP2015142016A (ja) 2015-08-03
TW201539618A (zh) 2015-10-16

Similar Documents

Publication Publication Date Title
JP6937403B2 (ja) 基板載置台
KR100628888B1 (ko) 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치
US9487863B2 (en) Substrate processing apparatus
WO2015114977A1 (fr) Dispositif de traitement de substrat
US10096495B2 (en) Substrate processing apparatus
US20160090651A1 (en) Substrate processing apparatus
US20160032457A1 (en) Atomic layer deposition processing apparatus to reduce heat energy conduction
KR20100110822A (ko) 열처리 장치 및 그 제어 방법
JP6796692B2 (ja) 基板処理装置
WO2012153591A1 (fr) Appareil de formation de film
WO2015111329A1 (fr) Dispositif de traitement de substrat, plaque d'arrosage et procédé de traitement de substrat
KR102476943B1 (ko) 이너 월 및 기판 처리 장치
JP4782761B2 (ja) 成膜装置
JP6308030B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP6561148B2 (ja) 基板処理装置、継手部および半導体装置の製造方法
JP6506785B2 (ja) リソグラフィ用テンプレートの製造方法、プログラム及び基板処理装置
WO2016027734A1 (fr) Dispositif de traitement de substrat
JP2023006660A (ja) 基板処理装置及び基板処理方法
JP2003151970A (ja) 基板処理装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14881169

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14881169

Country of ref document: EP

Kind code of ref document: A1