WO2012147427A1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
- Publication number
- WO2012147427A1 WO2012147427A1 PCT/JP2012/056649 JP2012056649W WO2012147427A1 WO 2012147427 A1 WO2012147427 A1 WO 2012147427A1 JP 2012056649 W JP2012056649 W JP 2012056649W WO 2012147427 A1 WO2012147427 A1 WO 2012147427A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- photoelectric conversion
- semiconductor
- iii
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 154
- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- 239000002245 particle Substances 0.000 claims abstract description 57
- 239000000203 mixture Substances 0.000 claims abstract description 40
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 230000031700 light absorption Effects 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 137
- 238000000034 method Methods 0.000 description 18
- 229910052798 chalcogen Inorganic materials 0.000 description 17
- 150000001787 chalcogens Chemical class 0.000 description 16
- 239000012298 atmosphere Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 150000002894 organic compounds Chemical group 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011669 selenium Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 239000002879 Lewis base Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 150000007527 lewis bases Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- YWBHROUQJYHSOR-UHFFFAOYSA-N $l^{1}-selanylbenzene Chemical compound [Se]C1=CC=CC=C1 YWBHROUQJYHSOR-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- JPIIVHIVGGOMMV-UHFFFAOYSA-N ditellurium Chemical compound [Te]=[Te] JPIIVHIVGGOMMV-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 150000003958 selenols Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical group C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SKOLWUPSYHWYAM-UHFFFAOYSA-N carbonodithioic O,S-acid Chemical compound SC(S)=O SKOLWUPSYHWYAM-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229940082569 selenite Drugs 0.000 description 1
- MCAHWIHFGHIESP-UHFFFAOYSA-L selenite(2-) Chemical compound [O-][Se]([O-])=O MCAHWIHFGHIESP-UHFFFAOYSA-L 0.000 description 1
- 150000003962 selenoxides Chemical class 0.000 description 1
- GYSDUVRPSWKYDJ-UHFFFAOYSA-N selinone Chemical compound C1=CC(OCC=C(C)C)=CC=C1C1OC2=CC(O)=CC(O)=C2C(=O)C1 GYSDUVRPSWKYDJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TULWUZJYDBGXMY-UHFFFAOYSA-N tellurophene Chemical compound [Te]1C=CC=C1 TULWUZJYDBGXMY-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to a photoelectric conversion device including an I-III-VI group compound semiconductor.
- Patent Document 1 Japanese Patent Laid-Open No. 8-330614
- I-III-VI group compound semiconductors have a high light absorption coefficient, and are suitable for making photoelectric conversion devices thinner and larger in area and reducing manufacturing costs.
- Next generation using group I-III-VI group compound semiconductors Research and development of solar cells is underway.
- a photoelectric conversion device including such an I-III-VI group compound semiconductor has a configuration in which a plurality of photoelectric conversion cells are arranged side by side in a plane.
- a lower electrode such as a metal electrode
- a semiconductor layer including a light absorption layer and a buffer layer and an upper electrode such as a transparent electrode and a metal electrode are stacked in this order on a substrate such as glass.
- the plurality of photoelectric conversion cells are electrically connected in series by electrically connecting the upper electrode of one adjacent photoelectric conversion cell and the lower electrode of the other photoelectric conversion cell by a connecting conductor. Yes.
- an object of the present invention is to improve photoelectric conversion efficiency in a photoelectric conversion device.
- the photoelectric conversion device is higher semiconductor particles in the surface portion than the composition ratio P I is the center of the I-B group element for III-B group elements together comprising a group I-III-VI compound A polycrystalline semiconductor layer in which a plurality of is bonded is used as the light absorption layer.
- FIG. 1 It is a schematic diagram which shows a mode that the photoelectric conversion apparatus which concerns on one Embodiment of this invention was seen from diagonally upward. It is a schematic diagram which shows the cross section of the photoelectric conversion apparatus of FIG. It is a schematic diagram which shows presence of the semiconductor particle in a light absorption layer. It is an enlarged view of the light absorption layer of FIG. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus.
- FIG. 1 is a perspective view showing a configuration of the photoelectric conversion device 11.
- FIG. 2 is an XZ sectional view of the photoelectric conversion device 11 of FIG. 1 to 3 are provided with a right-handed XYZ coordinate system in which the arrangement direction of photoelectric conversion cells 10 (the horizontal direction in the drawing in FIG. 1) is the X-axis direction.
- the photoelectric conversion device 11 has a configuration in which a plurality of photoelectric conversion cells 10 are arranged in parallel on a substrate 1.
- a plurality of photoelectric conversion cells 10 are arranged in parallel on a substrate 1.
- FIG. 1 only two photoelectric conversion cells 10 are shown for convenience of illustration, but an actual photoelectric conversion device 11 includes a large number of photoelectric conversion cells in the X-axis direction of the drawing or further in the Y-axis direction of the drawing.
- the conversion cells 10 are arranged two-dimensionally (two-dimensionally).
- Each photoelectric conversion cell 10 mainly includes a lower electrode layer 2, a light absorption layer (hereinafter also referred to as a first semiconductor layer) 3, a second semiconductor layer 4, an upper electrode layer 5, and a collecting electrode 7. Yes.
- the main surface on the side where the upper electrode layer 5 and the collecting electrode 7 are provided is a light receiving surface. Further, the photoelectric conversion device 11 is provided with three types of groove portions such as first to third groove portions P1, P2, and P3.
- the substrate 1 supports the plurality of photoelectric conversion cells 10 and is made of, for example, a material such as glass, ceramics, resin, or metal.
- the substrate 1 is made of blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm.
- the lower electrode layer 2 is a conductive layer provided on one main surface of the substrate 1.
- Mo molybdenum
- Al aluminum
- Ti titanium
- Ta tantalum
- Au gold
- the lower electrode layer 2 has a thickness of about 0.2 to 1 ⁇ m and is formed by a known thin film forming method such as sputtering or vapor deposition.
- the first semiconductor layer 3 as the light absorption layer is provided on a main surface (also referred to as one main surface) on the + Z side of the lower electrode layer 2 and has a first conductivity type (here, p-type conductivity type). And a thickness of about 1 to 3 ⁇ m.
- the first semiconductor layer 3 is a polycrystal formed by bonding a plurality of semiconductor particles mainly composed of a semiconductor composed of a chalcopyrite-based I-III-VI group compound (also referred to as an I-III-VI group compound semiconductor). It is a semiconductor layer.
- the average particle diameter of the semiconductor particles constituting the first semiconductor layer 3 may be 200 nm or more. Further, from the viewpoint of improving the adhesion with the lower electrode layer 2, the average particle diameter of the semiconductor particles constituting the first semiconductor layer 3 may be 1000 nm or less.
- the average particle size of the semiconductor particles is measured as follows. First, an image (also referred to as a cross-sectional image) is obtained by photographing with a scanning electron microscope (SEM) at any ten locations where there is no deviation in the cross section of the first semiconductor layer 3. Next, the grain boundary is traced with a pen after the transparent film is superimposed on the cross-sectional image.
- SEM scanning electron microscope
- a straight line also referred to as a scale bar
- a predetermined distance for example, 1 ⁇ m
- the transparent film in which the grain boundaries and the scale bar are written with a pen is read with a scanner to obtain image data.
- the area of the semiconductor particles is calculated from the image data using predetermined image processing software, and the particle diameter when the semiconductor particles are regarded as spherical is calculated from the area.
- the average particle diameter is calculated from the average value of the particle diameters of the plurality of semiconductor particles captured by the 10 cross-sectional images.
- the group I-III-VI compound is a group IB element (in this specification, the name of the group is described in the old IUPAC system. Note that the group IB element is 11 in the new IUPAC system.
- Group III-B elements also referred to as group 13 elements
- VI-B group elements also referred to as group 16 elements.
- I-III-VI group compounds include CuInSe 2 (also called copper indium diselenide, CIS), Cu (In, Ga) Se 2 (also called copper indium diselenide / gallium, CIGS), Cu (In, Ga) (Se, S) 2 (also referred to as diselene, copper indium sulphide, gallium, or CIGSS) can be given.
- the first semiconductor layer 3 may be composed of a thin film of a multicomponent compound semiconductor such as copper indium selenide / gallium having a thin film of selenite / copper indium sulfide / gallium layer as a surface layer.
- the light absorption layer 3 is made of CIGS.
- FIG. 3 is a schematic diagram showing a configuration focusing on the lower electrode layer 2, the first semiconductor layer 3, and the second semiconductor layer 4.
- the first semiconductor layer 3 has a polycrystalline structure in which a plurality of semiconductor particles 3a are bonded.
- FIG. 4 is an enlarged view of the first semiconductor layer 3.
- Each of the semiconductor particles 3a constituting the first semiconductor layer 3 contains an I-III-VI group compound.
- the composition ratio P I of I-B group element for III-B group element is higher in the surface portion than the central portion of the semiconductor particles 3a.
- the composition ratio P VI of Group VI-B element to III-B group elements may be higher in the surface portion than the central portion of the semiconductor particles 3a.
- the VI-B group element defects in the surface portion of the semiconductor particle 3a are reduced, and the recombination of carriers in the vicinity of the grain boundary is suppressed.
- the ratio of the group IB element and the group VI-B element in the surface part close to the grain boundary is high, the energy position of the conduction band in the surface part becomes high, and the residence time of the carrier is shortened. Recombination of carriers in the vicinity is suppressed. From the above, the photoelectric conversion efficiency of the photoelectric conversion device 11 is further improved.
- the surface portion of the semiconductor particles 3a includes a grain boundary between the semiconductor particles 3a and a region from the grain interface to 1/10 of the diameter of the semiconductor particles 3a.
- the central portion of the semiconductor particle 3a refers to a portion located inside the surface portion.
- the semiconductor particles. 3a, VI-B on the composition ratio P I and III-B group element I-B group element for III-B group element may gradually increase as it approaches the surface of the semiconductor particle 3a. For example, in FIG. 4, when comparing the point 3a-1 ⁇ 3a-5 of the semiconductor particles 3a are as P I and P VI approaches from the point 3a-5 at the point 3a-1 may be both gradually becomes larger .
- composition ratio P I and the composition ratio P VI is measured as follows. First, the cross section of the first semiconductor layer 3 is observed with a transmission electron microscope (TEM), and EDS analysis is performed at a desired point of the semiconductor particles 3a. The atomic ratio M I of the group IB element, the atomic ratio M III of the group III-B element, and the atomic ratio M VI of the group VI-B element at that point are measured by EDS analysis. From these measurement results, the composition ratio P I of the group IB element to the group III-B element is obtained as M I / M III , and the composition ratio P VI of the group VI-B element to the group III-B element Is determined as M VI / M III .
- TEM transmission electron microscope
- FIG. 10 is an example of the distribution of the composition ratio P I and the composition ratio P VI at a point just above the grain boundary and at each point shifted to the center by 50 nm from the grain boundary for the semiconductor particle 3a having a particle diameter of 500 nm. .
- the central portion of the semiconductor particles 3a composition ratio P I at the point of (grain boundary 200 nm) while a 1.2, a surface portion (from the grain boundary 0 nm, i.e., grain boundary immediately above) of the composition ratio P I at a point is as large as 2.4.
- the central portion of the semiconductor particles 3a while the composition ratio P VI at point (from the grain boundary 200 nm) is 2.1, the composition ratio P VI at a point of the surface portion (0 nm from the grain boundary) is 2 .5.
- the second semiconductor layer 4 is a semiconductor layer provided on one main surface of the first semiconductor layer 3.
- the second semiconductor layer 4 has a conductivity type (here, n-type conductivity type) different from that of the first semiconductor layer 3.
- a conductivity type here, n-type conductivity type
- positive and negative carriers generated by photoelectric conversion in the first semiconductor layer 3 are favorably separated.
- semiconductors having different conductivity types are semiconductors having different conductive carriers.
- the conductivity type of the second semiconductor layer 4 may be i-type instead of n-type.
- the second semiconductor layer 4 includes, for example, cadmium sulfide (CdS), indium sulfide (In 2 S 3 ), zinc sulfide (ZnS), zinc oxide (ZnO), indium selenide (In 2 Se 3 ), In (OH , S), (Zn, In) (Se, OH), and (Zn, Mg) O. From the viewpoint of reducing current loss, the second semiconductor layer 4 can have a resistivity of 1 ⁇ ⁇ cm or more.
- the second semiconductor layer 4 is formed by, for example, a chemical bath deposition (CBD) method or the like.
- the second semiconductor layer 4 has a thickness in the normal direction of one main surface of the first semiconductor layer 3. This thickness is set to 10 to 200 nm. From the viewpoint of suppressing damage when the upper electrode layer 5 is formed on the second semiconductor layer 4 by a sputtering method or the like, it is set to 100 to 200 nm. be able to.
- the upper electrode layer 5 is a transparent conductive film having an n-type conductivity provided on the second semiconductor layer 4 and is an electrode for extracting charges generated in the first semiconductor layer 3.
- the upper electrode layer 5 is made of a material having a lower resistivity than the second semiconductor layer 4.
- the upper electrode layer 5 includes what is called a window layer, and when a transparent conductive film is further provided in addition to the window layer, these may be regarded as an integrated upper electrode layer 5.
- the upper electrode layer 5 mainly includes a material having a wide forbidden band, transparent, and low resistance.
- a metal oxide semiconductor such as ZnO, In 2 O 3 and SnO 2 can be adopted.
- These metal oxide semiconductors may contain any element of Al, B, Ga, In, F, and the like.
- Specific examples of the metal oxide semiconductor containing such an element include, for example, AZO (Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IZO (Indium Zinc Oxide), ITO (Indium Tin Oxide), FTO ( Fluorine tin Oxide).
- the upper electrode layer 5 is formed to have a thickness of 0.05 to 3.0 ⁇ m by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like.
- the upper electrode layer 5 has a resistivity of less than 1 ⁇ ⁇ cm and a sheet resistance of 50 ⁇ / ⁇ or less. Can do.
- the second semiconductor layer 4 and the upper electrode layer 5 may be made of a material having a property (also referred to as light transmission property) that allows light to easily pass through the wavelength region of light absorbed by the first semiconductor layer 3. Thereby, a decrease in light absorption efficiency in the first semiconductor layer 3 caused by providing the second semiconductor layer 4 and the upper electrode layer 5 is reduced.
- a property also referred to as light transmission property
- the upper electrode layer 5 can have a thickness of 0.05 to 0.5 ⁇ m. Furthermore, from the viewpoint of reducing the light reflection loss at the interface between the upper electrode layer 5 and the second semiconductor layer 4, the absolute refractive index between the upper electrode layer 5 and the second semiconductor layer 4 is substantially reduced. It can be made the same.
- the current collecting electrodes 7 are spaced apart in the Y-axis direction, and each extend in the X-axis direction.
- the collector electrode 7 is an electrode having conductivity, and is made of a metal such as silver (Ag), for example.
- the collecting electrode 7 plays a role of collecting charges generated in the first semiconductor layer 3 and taken out in the upper electrode layer 5. If the current collecting electrode 7 is provided, the upper electrode layer 5 can be thinned.
- connection conductor 6 is constituted by a portion extending in the Y-axis direction of the current collecting electrode 7 as shown in FIG.
- connection conductor 6 is not limited to this, You may be comprised by the extension part of the upper electrode layer 5.
- the current collecting electrode 5 has a width of 50 to 400 ⁇ m so that good conductivity is ensured and a decrease in the light receiving area that affects the amount of light incident on the first semiconductor layer 3 is minimized. Can be.
- FIG. 5 to FIG. 9 are cross-sectional views schematically showing a state during the manufacture of the photoelectric conversion device 11.
- each sectional drawing shown by FIGS. 5-9 shows the mode in the middle of manufacture of the part corresponding to the cross section shown by FIG.
- a lower electrode layer 2 made of Mo or the like is formed on substantially the entire surface of the cleaned substrate 1 using a sputtering method or the like. Then, the first groove portion P1 is formed from the linear formation target position along the Y direction on the upper surface of the lower electrode layer 2 to the upper surface of the substrate 1 immediately below the formation position.
- the first groove portion P1 can be formed by, for example, a scribe process in which a groove process is performed by irradiating a formation target position while scanning with a laser beam by a YAG laser or the like.
- FIG. 6 is a diagram illustrating a state after the first groove portion P1 is formed.
- FIG. 7 is a diagram showing a state after the first semiconductor layer 3, the second semiconductor layer 4, and the upper electrode layer 5 are formed.
- the first semiconductor layer 3 is formed by a process called a so-called coating method or printing method.
- a solution for forming a semiconductor containing an element constituting the first semiconductor layer 3 is applied onto the lower electrode layer 2, and then drying and heat treatment are sequentially performed.
- a solution for forming a semiconductor is a single source precursor in which a group IB element, a group III-B element, and a group VI-B element constituting a group I-III-VI compound semiconductor are contained in one molecule (US Patent) No. 6992202) may be used in which a solvent is dissolved. Moreover, various organic solvents and water are used as a solvent used for the solution for semiconductor formation.
- the single source precursor for example, one having a structure as shown in the chemical formula (1) can be used.
- E is a chalcogen element
- R is an organic compound
- RE is a chalcogen element-containing organic compound
- L is a Lewis base
- A is a group IB element
- B is a group III-B element.
- the chalcogen element means S, Se, or Te among the VI-B group elements.
- the chalcogen element-containing organic compound is an organic compound containing a chalcogen element and is an organic compound having a covalent bond between a carbon element and a chalcogen element.
- Examples of the chalcogen element-containing organic compound include thiol, sulfide, disulfide, thiophene, sulfoxide, sulfone, thioketone, sulfonic acid, sulfonic acid ester, sulfonic acid amide, selenol, selenide, diselenide, selenoxide, selenone, telluride, telluride, ditelluride Etc.
- the chalcogen element-containing organic compound used for the single source precursor has a high coordination power to metal, thiol, sulfide, disulfide, selenol, selenide, diselenide, tellurol, Telluride, ditelluride and the like may be used.
- a Lewis base is a compound having an unshared electron pair.
- the Lewis base include organic compounds having a functional group having a VB group element having an unshared electron pair (also referred to as a Group 15 element) and a functional group having a VI-B group element having an unshared electron pair. Used. From the viewpoint of enhancing the solubility in an organic solvent and easily producing a high concentration semiconductor forming solution, a compound having an aryl group may be used as the Lewis base. Examples of such a Lewis base include triarylphosphine.
- the single source precursor include, for example, a chalcogen element-containing organic compound is phenyl selenol, a Lewis base is triphenylphosphine, a group IB element is Cu, and a group III-B element is In the case of In, a structure represented by the following chemical formula (2) is exemplified.
- Other specific examples of the single source complex include those having a structure represented by the following chemical formula (3), in which Ga is used instead of In as the III-B group element in the chemical formula (2).
- the group I-III-VI compound has In and Ga as in CIGS
- a mixture of the single source complex of the chemical formula (2) and the single source complex of the chemical formula (3) is included in the semiconductor forming solution. May be.
- Ph is a phenyl group.
- the first semiconductor layer 3 is formed by applying the semiconductor-forming solution prepared as described above onto one main surface of the lower electrode layer 2 to form a film, and then performing heat treatment on the film. Is formed.
- a spin coater, screen printing, dipping, spraying, or a die coater is used to apply the semiconductor forming solution.
- the heat treatment of the above film involves a process in which an organic component in the film is pyrolyzed (hereinafter referred to as a pyrolysis process), and a group I-B element, a group III-B element, and a group VI-B element chemically react with I And a step of producing and crystallizing a group III-VI compound (hereinafter referred to as a crystallization step).
- a pyrolysis process an organic component in the film is pyrolyzed
- a group I-B element, a group III-B element, and a group VI-B element chemically react with I
- a step of producing and crystallizing a group III-VI compound hereinafter referred to as a crystallization step.
- the thermal decomposition step is performed in an inert atmosphere containing water vapor or a reducing atmosphere containing water vapor, and the temperature during the thermal decomposition may be, for example, 50 to 350 ° C.
- the inert atmosphere include a nitrogen atmosphere.
- examples of the reducing atmosphere include a forming gas atmosphere and a hydrogen atmosphere.
- the water vapor contained in these atmospheres may be, for example, 20 to 1000 ppm in terms of volume fraction.
- This group III complex is first pyrolyzed to produce a solid containing a group III-B element (hereinafter referred to as a group III solid), whereas the group I complex is still liquefied in a complex state.
- This liquid group I complex surrounds the group III solid. As a result, it is considered that the concentration distribution of the III-B group element and the IB group element may occur.
- a crystallization step is performed.
- the crystallization step is performed in an inert atmosphere containing a chalcogen element or a reducing atmosphere containing a chalcogen element, and the heat treatment temperature may be 400 to 600 ° C., for example.
- the chalcogen element can be contained in the atmosphere in the state of S vapor, Se vapor, H 2 S, H 2 Se and the like.
- the IB group element, the III-B group element, and the VI-B group element chemically react to form a polycrystal of the I-III-VI group compound. Is this time, the concentration distribution of the thermal decomposition step III-B group element and I-B group element formed in is maintained to some extent, considered as the difference in composition ratio P I in the generated within the semiconductor particles 3a occurs .
- the composition of the VI-B group element in the semiconductor particles 3a can be changed by adjusting the concentration of the chalcogen element in the atmosphere at the initial stage of the process, the temperature rising rate, and the like.
- the temperature of the heat treatment is increased from around room temperature to a crystallization temperature of 400 to 600 ° C. at a relatively slow temperature increase rate of about 4 to 9 ° C./min.
- the concentration of the chalcogen element in the atmosphere at the time of the temperature rise is set to a relatively high partial pressure ratio of 200 to 1000 ppm.
- the composition ratio P VI of Group VI-B element to III-B group element can be a high structure in the surface portion than the central portion of the semiconductor particles 3a. This is because chalcogenization is promoted at an early stage of the crystallization process, so that a chalcopyrite structure having a high melting point is easily formed on the surface portion of the semiconductor particles 3a. This surface portion suppresses the diffusion of the chalcogen element into the interior, so that it is considered that a composition gradient of the VI-B group element is formed.
- the second semiconductor layer 4 is formed by a solution growth method (also referred to as a CBD method). For example, cadmium acetate and thiourea are dissolved in ammonia water, and the substrate 1 that has been formed up to the formation of the first semiconductor layer 3 is immersed therein, so that the first semiconductor layer 3 is made of CdS. Two semiconductor layers 4 are formed.
- the upper electrode layer 5 is a transparent conductive film containing, for example, indium oxide (ITO) containing Sn as a main component, and is formed by a sputtering method, a vapor deposition method, a CVD method, or the like.
- ITO indium oxide
- FIG. 8 is a diagram illustrating a state after the second groove portion P2 is formed.
- the second groove portion P2 is formed at a position slightly shifted in the X direction (in the drawing, + X direction) from the first groove portion P1.
- the current collecting electrode 7 and the connection conductor 6 are formed.
- a conductive paste also referred to as a conductive paste
- a metal powder such as Ag is dispersed in a resin binder or the like is printed so as to draw a desired pattern, This is formed by drying and solidifying.
- the solidified state is the solidified state after melting when the binder used in the conductive paste is a thermoplastic resin, and the curing when the binder is a curable resin such as a thermosetting resin or a photocurable resin. Includes both later states.
- FIG. 9 is a view showing a state after the current collecting electrode 7 and the connection conductor 6 are formed.
- the third groove portion P3 is formed from the linear formation target position on the upper surface of the upper electrode layer 5 to the upper surface of the lower electrode layer 2 immediately below it.
- the width of the third groove portion P3 is preferably about 40 to 1000 ⁇ m, for example.
- the third groove portion P3 is preferably formed by mechanical scribing similarly to the second groove portion P2. In this way, the photoelectric conversion device 11 shown in FIGS. 1 and 2 is manufactured by forming the third groove portion P3.
- FIG. 13 is a cross-sectional view of a photoelectric conversion device 21 according to another embodiment of the present invention.
- the photoelectric conversion device 21 parts having the same configuration and function as those of the photoelectric conversion device 11 shown in FIGS. 1 and 2 are denoted by the same reference numerals.
- the photoelectric conversion device 21 is different from the photoelectric conversion device 11 in that a plurality of holes 24 exist in the first semiconductor layer 23.
- the photoelectric conversion device 21 when stress is applied to the photoelectric conversion device 21, the stress can be effectively relaxed by the holes 24 in the first semiconductor layer 23. The occurrence of cracks can be effectively reduced.
- the composition ratio P I of I-B group element for III-B group elements because the higher the surface portion than the central portion of the semiconductor particles Since the recombination of carriers in the vicinity of the grain boundary between semiconductor particles is suppressed, high photoelectric conversion efficiency can be maintained. As a result, the photoelectric conversion device 21 has high resistance to stress and high photoelectric conversion efficiency.
- the photoelectric conversion device 11 will be described with a specific example.
- NaOCH 3 sodium methoxide
- H 5 phenylselenol
- a white precipitate was produced by dropping the second complex solution prepared in step [b] to the first complex solution prepared in step [a]. This precipitate was washed with methanol and dried to obtain a precipitate containing a single source precursor.
- this single source precursor one complex molecule contains Cu, In, and Se, or contains Cu, Ga, and Se.
- a semiconductor forming solution was prepared by adding pyridine as an organic solvent to the precipitate containing the single source precursor obtained in the step [c].
- the organic components were thermally decomposed by holding these films at 350 ° C. for 10 minutes in nitrogen atmospheres having different water vapor concentrations (three kinds of volume fractions: 300 ppm, 50 ppm, and 0 ppm).
- the thermally decomposed film was heat-treated in an atmosphere of a mixed gas of hydrogen gas and selenium vapor gas.
- the temperature was raised from around room temperature to 550 ° C. over 1 hour and held at 550 ° C. for 1 hour, thereby forming a first semiconductor layer having a thickness of 2 ⁇ m and mainly made of CIGS.
- each substrate on which the first semiconductor layer is formed is immersed in a solution in which cadmium acetate and thiourea are dissolved in ammonia water, so that the CdS having a thickness of 50 nm is formed on the first semiconductor layer.
- a second semiconductor layer was formed.
- an upper electrode layer made of ZnO doped with Al was formed by sputtering on the second semiconductor layer to produce a photoelectric conversion device.
- composition analysis in the first semiconductor layer of each photoelectric conversion device thus fabricated and the measurement of the photoelectric conversion efficiency of each photoelectric conversion device were performed.
- composition analysis in the 1st semiconductor layer of each photoelectric conversion apparatus was implemented as follows. First, a cross section of the first semiconductor layer is observed with a TEM, and a point (surface portion) of 0 nm from the grain boundary to the center of the semiconductor particle having a particle diameter of 500 nm and a point of 200 nm from the grain boundary to the center ( for the central portion), performs composition analysis by EDS analysis was calculated composition ratio P I and P VI at each point.
- the composition ratio P I of the central portion and P I (central) the composition ratio P I of the surface portion when the P I (surface portion), P I (surface portion) / P I (central portion) The larger the value, the higher the IB group element concentration in the surface portion.
- composition ratio P VI of the central portion is P VI (central portion) and the composition ratio P VI of the surface portion is P VI (central portion)
- P VI (surface portion) / P VI (central portion) Indicates that the VI-B group element concentration in the surface portion is higher as the value is larger.
- the P I (surface part) / P I (center part) of each sample pyrolyzed with varying water vapor concentration was 2.3 when the water vapor concentration was 50 ppm, 2.0 when the water vapor concentration was 300 ppm, and 0 ppm. 1 in the case.
- P VI (surface portion) / P VI (center portion) was 1.4 when the water vapor concentration was 50 ppm, 1.2 when the water vapor concentration was 300 ppm, and 1 when the water vapor concentration was 0 ppm.
- the photoelectric conversion efficiency of each photoelectric conversion device was measured as follows. Using a so-called steady light solar simulator, the photoelectric conversion efficiency was measured under the conditions where the light irradiation intensity on the light receiving surface of the photoelectric conversion device was 100 mW / cm 2 and AM (air mass) was 1.5.
- the photoelectric conversion efficiency for P I (surface part) / P I (center part) and P VI (surface part) / P VI (center part) obtained as a result of the composition analysis in the first semiconductor layer is shown in FIG. Each is shown in FIG.
- Substrate 2 Lower electrode layer 3: First semiconductor layer (light absorption layer) 4: Second semiconductor layer 5: Upper electrode layer 6: Connection conductor 7: Current collecting electrode 10: Photoelectric conversion cell 11: Photoelectric conversion device
Abstract
Description
図1は、光電変換装置11の構成を示す斜視図である。図2は、図1の光電変換装置11のXZ断面図である。なお、図1から図3には、光電変換セル10の配列方向(図1の図面視左右方向)をX軸方向とする右手系のXYZ座標系が付されている。
図5から図9は、光電変換装置11の製造途中の様子をそれぞれ模式的に示す断面図である。なお、図5から図9で示される各断面図は、図2で示された断面に対応する部分の製造途中の様子を示す。
本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更が施されることは何等差し支えない。例えば、上述したように、第1の半導体層が、III-B族元素に対するI-B族元素の組成比PIが中央部よりも表面部において高くなっている半導体粒子を具備していることに加え、図13に示すように、第1の半導体層中に複数の空孔が存在していてもよい。なお、図13は、本発明の他の実施形態に係る光電変換装置21の断面図である。光電変換装置21において、図1および図2に示す光電変換装置11と同様な構成および機能を有する部分については同一符号が付されている。光電変換装置21において、第1の半導体層23中に複数の空孔24が存在している点が光電変換装置11と異なっている。
2:下部電極層
3:第1の半導体層(光吸収層)
4:第2の半導体層
5:上部電極層
6:接続導体
7:集電電極
10:光電変換セル
11:光電変換装置
Claims (6)
- I-III-VI族化合物を含むとともにIII-B族元素に対するI-B族元素の組成比PIが中心部よりも表面部において高い半導体粒子が複数個結合した多結晶半導体層を光吸収層として用いた光電変換装置。
- 前記半導体粒子において、III-B族元素に対するVI-B族元素の組成比PVIが前記中心部よりも前記表面部において高い、請求項1に記載の光電変換装置。
- 前記半導体粒子は、前記組成比PIおよび前記組成比PVIが前記半導体粒子の表面に近づくにつれて漸次高くなっている、請求項2に記載の光電変換装置。
- 前記I-III-VI族化合物は、I-B族元素としてCuを含み、VI-B族元素としてSeを含む、請求項1乃至3のいずれかに記載の光電変換装置。
- 前記I-III-VI族化合物は、III-B族元素としてInおよびGaを含む、請求項4に記載の光電変換装置。
- 前記光吸収層は複数の空孔を有している、請求項1乃至5のいずれかに記載の光電変換装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280003826.2A CN103229309B (zh) | 2011-04-25 | 2012-03-15 | 光电转换装置 |
US14/007,897 US9484476B2 (en) | 2011-04-25 | 2012-03-15 | Photoelectric conversion device |
EP12776079.1A EP2704207A4 (en) | 2011-04-25 | 2012-03-15 | PHOTOVOLTAIC INVERTER |
JP2013511971A JP5409960B2 (ja) | 2011-04-25 | 2012-03-15 | 光電変換装置 |
US15/289,646 US9935219B2 (en) | 2011-04-25 | 2016-10-10 | Photoelectric conversion device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011097166 | 2011-04-25 | ||
JP2011-097166 | 2011-04-25 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/007,897 A-371-Of-International US9484476B2 (en) | 2011-04-25 | 2012-03-15 | Photoelectric conversion device |
US15/289,646 Continuation US9935219B2 (en) | 2011-04-25 | 2016-10-10 | Photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012147427A1 true WO2012147427A1 (ja) | 2012-11-01 |
Family
ID=47071953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/056649 WO2012147427A1 (ja) | 2011-04-25 | 2012-03-15 | 光電変換装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9484476B2 (ja) |
EP (1) | EP2704207A4 (ja) |
JP (2) | JP5409960B2 (ja) |
CN (1) | CN103229309B (ja) |
WO (1) | WO2012147427A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150096617A1 (en) * | 2012-02-28 | 2015-04-09 | Tdk Corporation | Compound semiconductor solar battery |
WO2014115466A1 (ja) * | 2013-01-22 | 2014-07-31 | 京セラ株式会社 | 光電変換装置 |
JP6023336B2 (ja) * | 2013-07-30 | 2016-11-09 | 京セラ株式会社 | 光電変換装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555614A (ja) * | 1991-08-28 | 1993-03-05 | Fuji Electric Co Ltd | カルコパイライト型化合物薄膜結晶の製造方法 |
JPH08330614A (ja) | 1995-05-29 | 1996-12-13 | Showa Shell Sekiyu Kk | 薄膜太陽電池および該薄膜太陽電池の製造方法 |
JP2004111664A (ja) * | 2002-09-19 | 2004-04-08 | Shinto Fine Co Ltd | 化合物半導体薄膜の形成方法 |
US6992202B1 (en) | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
JP2008507835A (ja) * | 2004-05-03 | 2008-03-13 | ソラロニックス エス.エー. | 薄膜黄銅鉱化合物を生成するための方法 |
JP2010129641A (ja) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | 薄膜太陽電池の製法 |
-
2012
- 2012-03-15 CN CN201280003826.2A patent/CN103229309B/zh not_active Expired - Fee Related
- 2012-03-15 US US14/007,897 patent/US9484476B2/en not_active Expired - Fee Related
- 2012-03-15 WO PCT/JP2012/056649 patent/WO2012147427A1/ja active Application Filing
- 2012-03-15 JP JP2013511971A patent/JP5409960B2/ja not_active Expired - Fee Related
- 2012-03-15 EP EP12776079.1A patent/EP2704207A4/en not_active Withdrawn
- 2012-03-19 JP JP2012061652A patent/JP2012238839A/ja active Pending
-
2016
- 2016-10-10 US US15/289,646 patent/US9935219B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555614A (ja) * | 1991-08-28 | 1993-03-05 | Fuji Electric Co Ltd | カルコパイライト型化合物薄膜結晶の製造方法 |
JPH08330614A (ja) | 1995-05-29 | 1996-12-13 | Showa Shell Sekiyu Kk | 薄膜太陽電池および該薄膜太陽電池の製造方法 |
JP2004111664A (ja) * | 2002-09-19 | 2004-04-08 | Shinto Fine Co Ltd | 化合物半導体薄膜の形成方法 |
US6992202B1 (en) | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
JP2008507835A (ja) * | 2004-05-03 | 2008-03-13 | ソラロニックス エス.エー. | 薄膜黄銅鉱化合物を生成するための方法 |
JP2010129641A (ja) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | 薄膜太陽電池の製法 |
Non-Patent Citations (5)
Title |
---|
D. F. MARRON ET AL.: "Electronic structure of secondary phases in Cu-rich CuGaSe2 solar cell devices", APPLIED PHYSICS LETTERS, vol. 85, no. 17, 25 October 2004 (2004-10-25), pages 3755 - 3757, XP012063080 * |
M. HAFEMEISTER ET AL.: "Large Neutral Barrier at Grain Boundaries in Chalcopyrite Thin Films", PHYSICAL REVIEW LETTERS, vol. 104, no. 19, 14 May 2010 (2010-05-14), XP055033474 * |
M. KAWAMURA ET AL.: "Grain Boundary Evaluation of Cu (In1-xGax) Se2 Solar Cells", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 6, 21 June 2010 (2010-06-21), XP001557224 * |
S. ISHIZUKA ET AL.: "Control of thin film properties of Cu(In,Ga)Se2 using water vapor introduction during growth", JOURNAL OF APPLIED PHYSICS, vol. 100, 7 November 2006 (2006-11-07), XP012090514 * |
See also references of EP2704207A4 * |
Also Published As
Publication number | Publication date |
---|---|
US20140014177A1 (en) | 2014-01-16 |
US9484476B2 (en) | 2016-11-01 |
EP2704207A1 (en) | 2014-03-05 |
EP2704207A4 (en) | 2014-09-03 |
JP2012238839A (ja) | 2012-12-06 |
JP5409960B2 (ja) | 2014-02-05 |
US9935219B2 (en) | 2018-04-03 |
US20170025556A1 (en) | 2017-01-26 |
CN103229309B (zh) | 2016-08-10 |
CN103229309A (zh) | 2013-07-31 |
JPWO2012147427A1 (ja) | 2014-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011013657A1 (ja) | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 | |
JP2011176204A (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
US9935219B2 (en) | Photoelectric conversion device | |
JP5430748B2 (ja) | 光電変換装置、および光電変換装置の製造方法 | |
JP5451899B2 (ja) | 光電変換装置 | |
JP5318281B2 (ja) | 光電変換装置 | |
JP5918042B2 (ja) | 光電変換装置の製造方法 | |
JP5570650B2 (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2012114251A (ja) | 光電変換装置の製造方法 | |
JP6162592B2 (ja) | 光電変換装置の製造方法 | |
JP2015142001A (ja) | 光電変換装置の製造方法 | |
JP5791802B2 (ja) | 光電変換装置の製造方法 | |
JP2013239618A (ja) | 光電変換装置の製造方法 | |
JP2012114250A (ja) | 光電変換装置の製造方法 | |
US20140224333A1 (en) | Photoelectric conversion device | |
JP2015070020A (ja) | 光電変換装置の製造方法 | |
JP2015138832A (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2015103657A (ja) | 光電変換装置の製造方法 | |
JP2015122394A (ja) | 光電変換装置の製造方法 | |
JP2016009754A (ja) | 光電変換装置の製造方法 | |
JP2015065287A (ja) | 光電変換装置の製造方法 | |
JP2015065286A (ja) | 光電変換装置の製造方法 | |
JP2014045155A (ja) | 光電変換装置の製造方法 | |
JP2015222794A (ja) | 光電変換装置の製造方法 | |
JP2012138477A (ja) | 半導体層の製造方法および光電変換装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12776079 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013511971 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012776079 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14007897 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |