WO2012142915A1 - 单片参考全桥磁场传感器 - Google Patents

单片参考全桥磁场传感器 Download PDF

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Publication number
WO2012142915A1
WO2012142915A1 PCT/CN2012/073604 CN2012073604W WO2012142915A1 WO 2012142915 A1 WO2012142915 A1 WO 2012142915A1 CN 2012073604 W CN2012073604 W CN 2012073604W WO 2012142915 A1 WO2012142915 A1 WO 2012142915A1
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WIPO (PCT)
Prior art keywords
arm
magnetic field
sensing
field sensor
arms
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PCT/CN2012/073604
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English (en)
French (fr)
Inventor
迪克·詹姆斯·G
金英西
沈卫锋
薛松生
王建国
雷啸锋
Original Assignee
江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to US14/112,928 priority Critical patent/US8933523B2/en
Priority to JP2014505493A priority patent/JP6247631B2/ja
Priority to EP12773589.2A priority patent/EP2700968B1/en
Publication of WO2012142915A1 publication Critical patent/WO2012142915A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the invention relates to a sensor for magnetic field detection, in particular to a monolithic reference full bridge magnetic field sensor.
  • Magnetic field sensors are widely used in modern systems to measure and detect physical quantities, including but not limited to measurements of magnetic field strength, current, position, power, direction, and the like. Although there are many sensors that measure magnetic fields and other physical parameters, these techniques have limitations such as excessive size, low sensitivity, narrow dynamic range, high manufacturing cost, poor stability, and other disadvantages. Therefore, continuous improvement of magnetic sensors, especially those that are easily integrated with semiconductor devices and integrated circuits, and their manufacturing methods are an ongoing need.
  • Magnetic tunnel junction sensors have the advantages of high sensitivity, small size, low cost and low power consumption.
  • MTJ or GMR is compatible with semiconductor standard manufacturing processes, high-sensitivity MTJ or GMR sensors do not achieve low-cost, large-scale production.
  • the yield of the sensor depends on the offset value of the magnetoresistive output of the MTJ or GMR component. It is difficult to achieve the matching degree of the magnetoresistive output of the MTJ or GMR component that constitutes the bridge.
  • the present invention provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, two reference arms and two sensing arms being spaced apart and connected to form a full bridge
  • the reference arm and the sensing arm are composed of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizes a linear portion of its output curve to induce a magnetic field:
  • the magnetic field sensor further includes a reference arm and a sensing arm A peripheral magnet for adjusting the magnetization of the magnetic field sensor itself and an angle of the sensitive direction; the pad of the magnetic field sensor can be connected to the ASK: integrated circuit or the lead frame of the lead frame by wires.
  • the invention further provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, the two reference arms and the two sensing arms are arranged at intervals and connected to form a full bridge, a reference arm and
  • the sensing arm is composed of one or more MTJ or GM magnetoresistive elements; the MTJ or GMR magnetoresistive element uses a linear portion of its output curve to induce a magnetic field; the magnetoresistive element constituting the reference arm is thinner than the magnetoresistive element constituting the sensing arm
  • the pad of the magnetic field sensor can be connected to the package pin of the ASIC integrated circuit or lead frame by a wire.
  • the invention further provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, the two reference arms and the two sensing arms are arranged at intervals and connected to form a full bridge, each bridge
  • the arm resistance consists of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element uses a linear portion of its output curve to induce a magnetic field:
  • the field sensor further includes a shielding layer covering the magnetoresistive element constituting the reference arm, the shielding layer being a ferromagnetic material of high magnetic permeability; the pad of the magnetic field sensor may be connected to the package of the ASIC integrated circuit or the lead frame by wires On the pin.
  • the invention further provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, the two reference arms and the two sensing arms being spaced apart and connected to form a full bridge.
  • the reference arm and the sensing arm are constructed of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizes a linear portion of its output curve to induce a magnetic field: a layer of anti-iron is deposited on the upper or lower layer of the free layer of the reference arm element a magnetic or permanent magnetic layer that biases the reference arm by exchange coupling of the antiferromagnetic layer or exchange coupling and field coupling of the permanent magnetic layer; the pad of the magnetic field sensor can be connected to the ASIC integrated circuit or lead frame by wires On the package pin.
  • the invention further provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, the two reference arms and the two sensing arms being spaced apart and connected to form a full bridge.
  • the invention further provides a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, the two reference arms and the two sensing arms being spaced apart and connected to form a full bridge.
  • Each bridge arm resistance consists of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element is a linear portion of its output curve to induce a magnetic field;
  • the reference arm element is self-layered or a layer deposited An antiferromagnetic layer or a permanent magnet layer, the reference arm is biased by an exchange coupling of the antiferromagnetic layer or an exchange coupling and a field coupling of the permanent magnet layer;
  • the magnetic field sensor further includes a magnetoresistance covering the reference arm
  • the shielding layer of the component, the shielding layer is a ferromagnetic material with high magnetic permeability; the pad of the magnetic field sensor can be connected to the package pin of the ASIC integrated circuit or the lead frame by wires.
  • monolithic reference full-bridge magnetic field sensors exhibit temperature stability, low offset voltage, and excellent voltage symmetry.
  • Single-chip magnetic sensing bridges can be easily fabricated using standard semiconductor fabrication processes.
  • Figure is a schematic diagram of the magnetoresistance output of a reference layer spin valve sensing element with a magnetization direction as a difficult axis.
  • FIG. 2 is a schematic diagram of a reference full bridge structure using a magnetoresistive element.
  • Figure 3 is a graph showing the output of the reference arm and reference arm of the reference full bridge.
  • Figure 4 is a graph of the output of a reference full bridge circuit.
  • Figure 5 is a graph of the magnetoresistance resistance ratio and offset value of the reference arm and the sensing arm, showing offset curves for different magnetoresistance change rates from 50% to 200%.
  • Figure 6 is a graph of the resistance ratio and symmetry of the reference arm and the sensing arm, showing a symmetry plot of different magnetoresistance change rates from 50% to 200%.
  • Figure 7 is a schematic view showing the position of the bias permanent magnet of the MTJ element.
  • Figure 8 is a cross-sectional view of the permanent magnet and MTJ or GMR element shown in Figure 7, depicting a magnetic line profile of a set of biasing magnets.
  • Figure 9 depicts the offset and saturation field strength of the ⁇ ' ⁇ component output by setting the angle between the permanent magnet and the sensitive direction.
  • Figure 0 is a function of the field strength of a set of magnet center regions, which depends on the width of the magnet and the gap between the magnets.
  • Fig. 11 is a connection diagram showing a method of combining a plurality of MTJ or GMR elements into one magnetoresistive element.
  • Figure 12 is a layout diagram of the sensor chip.
  • the tilting placement magnet is used to set the bias points of the reference arm and the sensing arm to optimize the bridge output curve.
  • Figure 13 is a layout diagram in which the bias magnet and the MTJ or GMR elements of the reference arm and the sensing arm are arranged in parallel, and a shield layer is provided outside the reference element to increase the sensitivity of the bridge circuit as shown.
  • Figure 14 is a layout diagram in which the biasing magnet and the MT.f or GMR elements of the reference arm and the sensing arm are vertically arranged.
  • Figure 15 is a measurement of the saturation field along the major and minor axes of an elliptical MTJ or GMR element with a bias field along the short axis.
  • Figure 1 is a generalized form of the output curve of a GMR or neodymium sensing element for linear magnetic field detection.
  • the output curve is saturated in the low-resistance state 1 and the high-impedance state 2, and R H represents the resistance of the low-resistance state and the high-impedance state, respectively.
  • 3 ⁇ 4 is the typical offset between the saturation fields 5 and 6, which makes the saturation value closer to H.
  • H e The value of H e is often referred to as “Orange Peel” or “Ned Coupling”, which is typically between 1 and 250 e, and the structure and flatness of ⁇ , ⁇ or GMR magnetic films. Degree dependent, dependent on material and thorn preparation process.
  • FIG. 2 shows the connection of the sensing elements in the Wheatstone reference bridge.
  • the output curves of the two sensing element elements 20, 21 are strongly dependent on the applied magnetic field, and the two reference element elements 22, 23 are weakly sensitive to the external field.
  • the sensing elements placed on the substrate require two voltage points (Vbias, 24) and ground (GND, 25) and two half-bridge center contacts (Vi, 26, V2, 7).
  • the voltage at the center contact is: (3)
  • the output of the Wheatstone reference bridge is:
  • the output curves of the sensing element Rs (30) and the reference element Rref (31) are shown in Figure 3.
  • the output curve 40 of the Wheatstone bridge still has good linearity and central symmetry, as shown in FIG. Ideally, « Rr f m, electricity
  • the device acts as a linear sensor with no correction, which provides a linear operating range of approximately 2.5 times, which is greater than the typical operating range.
  • the reference full bridge as a magnetoresistive sensor will be more and more widely used because of its unique properties.
  • Figure 4 also shows that the output curve 41 of the reference bridge has an offset along the direction of the magnetic field and the output voltage is asymmetrical about the Y axis. This non-ideal state property occupies a large proportion in the reference full bridge sensor of the magnetoresistive element using a high magnetoresistance change rate.
  • the offset value of the bridge sensor is: ⁇ The function of the resistance ratio of the reference arm and the sensor arm.
  • the graph shows the graphs of different resistance change rates.
  • the reference component and the sensing component output curve can be centered, the offset of the bridge output still varies with the resistance ratio of the reference component and the sensing component.
  • Figure 6 is a symmetry function diagram of the output voltage of the bridge sensor in the same state.
  • the reference component and sensing element output curve can be centered, the bridge output exhibits a large asymmetry as the resistance ratio of the reference component and the sensing component. Therefore, the centering of the output curve is not necessarily the minimum value of the offset, which depends on the resistance ratio of the resistance of the different sensing elements and reference elements.
  • the ideal reference bridge sensor is composed of reference components and sensing elements of different saturation fields, and the resistance values of the reference component and the sensing component are set to a preset ratio, which may not be 1, and the bias magnetic field can be Adjust the response of the sensing element relative to the reference element.
  • the bridge sensors must first be able to set the relevant sensitivity of the sensing and reference components.
  • the sensitivity of the magnetoresistive element is a function of the resistance as a function of the applied magnetic field.
  • the shield layer deposits a high permeability ferromagnetic layer on top of the reference element to reduce the applied field strength.
  • the reference element and the MTJ sensing element have different sizes, they have different shape anisotropy properties.
  • the most common practice is to make the long axis length of the reference element larger than the long axis length of the sensing element, and the short axis length is smaller than the short axis length of the sensing element, so that the demagnetization effect of the reference element parallel to the sensitive direction is much larger than the sensing element.
  • antiferromagnetic layer (AF1) and antiferromagnetic layer 2 (AF2) mining] 3 ⁇ 4 antiferromagnetic material, such as PtMru IrMn, FeMn.
  • the ferromagnetic layer employs some representative ferromagnetic films or multilayer films composed of ferromagnetic alloys including, but not limited to, NiFe, CoFeB, CoFe, and NiFeCo.
  • the insulating layer may be any insulating material capable of spin polarization, such as Al 2 () 3 or MgO.
  • the barrier layer is typically a film of non-ferromagnetic material such as Ilu or Cii.
  • the antiferromagnetic blocking temperature of AF2 of different antiferromagnetic layers is lower than that of AF2, so that the bias field of the pinned layer of the ferromagnetic layer/Ru/ferromagnetic layer structure and the bias field of the free layer are positive. Cross vertical.
  • Fe, Co, Cr, and Pt alloy permanent magnet materials are deposited on the surface of the sensing element or on the MTJ stack to provide a loose magnetic field that biases the output curve of the MTJ element.
  • the advantage of permanent magnet bias is that the permanent magnet bias magnet can initialize a large magnetic field after the bridge is formed.
  • the bias field can be used to eliminate the magnetic domain of the MTJ component to stabilize and linearize the output of the MTJ or GMR component.
  • the great advantage of this design is its great flexibility in design adjustment.
  • the following multilayer film series design is achievable:
  • the preferred method of providing 11 hail is shown in Figure 7.
  • the magnetoresistive sensor is placed between two permanent magnets 71.
  • the permanent magnet has a width (W) 73 , a thickness (0 74 , a length ( Ly ) 75 and between the permanent magnets The gap (Gap) 72. These four parameters.
  • the permanent magnet is designed to provide a cross-bias field perpendicular to the sensitive axis 76 of the bridge sensor.
  • the magnet is initialized by applying a large magnetic field, so its magnetic field 77 is perpendicular to the bridge sensor. Sensitive direction 76.
  • the magnetic field distribution 80 around the final permanent magnet 71 is as shown in FIG.
  • the magnetic field of the permanent magnet is considered to be the result of the virtual magnetic charge and magnetization boundary conditions formed at the edges 90 and 91 of the magnet as shown in FIG.
  • the magnitude of the magnetic charge varies with the magnitude and direction qmag92 of the remanence magnet, and is related to the tilt angle of the permanent magnet ("qre" or "qs'ns"): ⁇ M r cos(K ) (14)
  • the magnetic field generated by the virtual magnetic charge is:
  • Equation 16 is a function of Wi3 and ga P 72 shown in FIG. 0, which indicates that the saturation fields of the reference element and the sensing element can be changed by changing the shape dimension of the magnet 71 to influence each other.
  • ⁇ , ⁇ component stack, MTJ 3D dimensions and permanent magnet film on the reference and sensing components, under different H CTQSS 100 and 101, the saturation field of the reference component is the sensing component 6,5 times. This ratio is sufficient for a dry reference bridge, and this ratio can be increased to 10 by appropriate design.
  • Figure 9 shows an angle and by providing a magnet sensitive direction can be generated simultaneously H CT.
  • SS 95 and offset field ⁇ . ⁇ )6 is to set the saturation field of the MTJ or GMR component, and to zero the output curve of the MTJ component.
  • This method is to optimize the symmetry, offset and sensitivity of the bridge output.
  • the angle of the residual magnet Mr and the sensitive direction 92 is set so that after the sensor chip is prepared, a fine adjustment device can be provided to minimize the offset value or symmetry, which can improve the product yield.
  • the germanium element 10 is a thin film of a sandwich structure between the substrate 11 and the upper electrode 12, while the current 113 is a conductive layer flowing vertically between the upper electrode of the MTJ element 110 and the substrate.
  • the advantage of maintaining the same size of the MTJ or GMR components on the reference and sensing arms is that this makes the device insensitive to etch bias during fabrication.
  • Another advantage of these series of MTJ or GMR components is that each series The number of components combined can be varied to set the optimum resistance ratio between the reference component and the sensing component.
  • Figure 12 shows a standard chip layout with different widths of tilting magnets and different sensing element spacing to produce an optimal reference full bridge sensor.
  • the series ⁇ , ⁇ or GMR components are located between the permanent magnets, which are inclined at an angle between the reference arms 22, 123 and the sensing arms 124, 125.
  • the zeroing of the offset between the reference component and the sensing component can be achieved by optimization.
  • the magnetic field sensor can preset the number of magnetoresistive components of the reference arm and the sensing arm to adjust the resistance of the reference arm and the sensing arm, thereby adjusting the resistance value thereof. ratio.
  • the magneto-resistive elements constituting the reference arm and the magnetoresistive elements constituting the sensing arm are formed by connecting magnetoresistive elements in series, each of the magnetoresistance The resistance of the component is constant, the number of series determines its resistance, or simply offsets the reference arm and the sensing arm. Therefore, the reference arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the reference arm, and the sensing arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the sensing arm, and the resistance of the reference arm and the sensing arm.
  • the ratio can be adjusted by setting a different number of magnetoresistive elements.
  • equation (4) by setting the associated bridge arm offset, the bridge output can be centered to achieve relative symmetry, as shown in the following equation:
  • FIG. 3 Another different reference full bridge design is shown in Figure 3, which provides shielding layers 131, 132 and different biasing magnets 134, 135 for setting the saturation fields of the reference and sensing arms. Shields and narrow-width magnets are used to reduce the sensitivity of the reference arm, which can be reduced by a factor of 10 compared to using a shield or magnetic bias alone.
  • the best material for shielding magnetic fields is a ferromagnetic material with high magnetic permeability.
  • the difference in sensitivity between the reference arm and the sensing arm can be greatly increased by other biasing methods, such as changing the exchange coupling or shape performance.
  • Figure 14 shows another changeable chip layout used to build a high-sensitivity sensor, using a vector sum of shape-differential properties and magnetic bias fields to build a low HT.
  • the sensing elements 41, 142 are arranged at a 90 degree angle with the reference elements 143, 144.
  • the magnet is designed on the sensing arm to saturate the MTJ or GMR component in a vertically sensitive direction.
  • the bias field along the sensitive direction 145 is used to tilt the magnetization of the sensing element in a sensitive direction 145.
  • Figure 15 shows the measurement of the saturation field along the long axis (6nm) and the short axis (2nm) of an elliptical MTJ or GMR component with a cross-bias field along the minor axis.
  • ⁇ 51 and 152 are curves of free layer thicknesses of 8iim and 16m i, respectively.
  • a single-piece reference full-bridge magnetic field sensor includes two reference arms and two sensing arms, and two reference arms and two sensing arms are spaced apart and connected to form a full
  • the bridge, the reference arm and the sensing arm are constructed of one or more MTJ or GMR magnetoresistive elements; the ⁇ or GMR magnetoresistive element is a linear portion of the output curve to induce a magnetic field;
  • the magnetic field sensor further includes a reference arm and a sensing arm A peripheral magnet for adjusting the magnetization of the magnetic field sensor itself and an angle of the sensitive direction; the pad of the magnetic field sensor can be connected to the package pin of the ASIC integrated circuit or the lead frame by a wire.
  • the reference arm and the sensing arm are prepared in the same process to increase temperature stability and component uniformity.
  • the reference arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the reference arm
  • the sensing arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the sensing arm
  • the resistance ratio of the reference arm and the sensing arm can be Adjusting the magnetic field sensor by setting a different number of magnetoresistive elements further includes a shielding layer covering the magnetoresistive elements constituting the reference arm, the shielding layer being high in permeability
  • the rate of ferromagnetic material is designed to reduce the magnetic field of the reference component and thereby increase the sensitivity of the bridge sensor.
  • the magnetic field sensor is disposed at a high magnetic permeability ferromagnetic material surrounding the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the external field on the sensing element, thereby increasing the sensitivity of the magnetic field sensor.
  • a single-piece reference full-bridge magnetic field sensor in a second embodiment, includes two reference arms and two sensing arms, and two reference arms and two sensing arms are spaced apart and connected to form a full
  • the bridge, the reference arm and the sensing arm are composed of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizes a linear portion of its output curve to induce a magnetic field; the magnetoresistive element constituting the reference arm is constituting the sensing arm The magnetoresistive element is more elongated; the pad of the magnetic field sensor can be connected to the package pin of the ASIC integrated circuit or lead frame by a wire.
  • the reference arm and the sensing arm are prepared using the same process steps to increase temperature stability and component uniformity.
  • the reference arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the reference arm
  • the sensing arm includes one or more magnetoresistive elements in series to adjust the resistance of the sensing arm, and the resistance ratio of the reference arm and the sensing arm It can be adjusted by setting a different number of magnetoresistive elements.
  • the magnetic field sensor further includes a shielding layer covering the magnetoresistive elements constituting the reference arm, the shielding layer being a ferromagnetic material of high magnetic permeability, the purpose of which is to reduce the magnetic field of the reference element and increase the sensitivity of the bridge sensor.
  • the magnetic field sensor further includes a ferromagnetic material disposed at a periphery of the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the field sensor on the sensing element and increase the sensitivity of the magnetic field sensor.
  • a third embodiment of the present invention is a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms.
  • the two reference arms and the two sensing arms are spaced apart and connected to form a full Bridge, each bridge arm resistance consists of one or more MTJ- or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizes a linear portion of its output curve to induce a magnetic field;
  • the magnetic field sensor also includes a cladding reference
  • the shielding layer of the magnetoresistive element of the arm, the shielding layer is a ferromagnetic material of high magnetic permeability;
  • the pad of the magnetic field sensor can be connected to the AS: C integrated circuit or the package pin of the i-wire frame by a lead wire, preferably,
  • the arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the reference arm, and the sensing arm includes one or more magnetoresistive elements connected in series to adjust the resistance of the sensing arm, and the resistance ratio
  • the magnetic field sensor further includes a ferromagnetic material disposed at a periphery of the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the external field on the sensing element, thereby increasing the sensitivity of the magnetic field sensor.
  • a fourth embodiment of the present invention is a monolithic reference full-bridge magnetic field sensor comprising two reference arms and two sensing arms, two reference arms and two sensing arms being spaced apart and connected to form A full bridge, the reference arm and the sensing arm are composed of one or more MT f or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizes a linear portion of its output curve to induce a magnetic field; the reference arm element free layer is deposited on the upper or lower layer An antiferromagnetic or permanent magnetic layer is provided, and the exchange coupling of the antiferromagnetic layer or the exchange coupling and the field coupling of the permanent magnetic layer biases the reference arm; the pad of the magnetic field sensor can be Connected to the package pins of the ASIC integrated circuit or lead frame by a bow wire.
  • the magnetoresistive elements constituting the reference arm are more elongated than the magnetoresistive elements constituting the sensor arm.
  • the magnetic field sensor further includes a shielding layer covering the magnetoresistive elements constituting the reference arm, the shielding layer being a ferromagnetic material of high magnetic permeability, the purpose of which is to reduce the magnetic field of the reference element and thereby increase the sensitivity of the bridge sensor.
  • the magnetic field sensor further includes a ferromagnetic material disposed at a periphery of the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the external field on the sensing element, thereby increasing the sensitivity of the magnetic field sensor.
  • a single-piece reference full-bridge magnetic field sensor includes two reference arms and two sensing arms, and two reference arms and two sensing arms are spaced and connected to each other Forming a full bridge, each bridge arm resistance consisting of one or more MTJ or GMR magnetoresistive elements; the MTJ or GMR magnetoresistive element utilizing a linear portion of its output curve to induce a magnetic field; the reference arm element free layer upper or lower layer deposition An antiferromagnetic layer or a permanent magnet layer is used, and the reference arm is biased by exchange coupling of the antiferromagnetic layer or exchange coupling and field coupling of the permanent magnet layer; the magnetoresistive element constituting the reference arm is larger than the magnetic body constituting the sensing arm The resistive element is more elongated; the pad of the magnetic field sensor can be connected to the package leads of the ASIC integrated circuit or lead frame by wires.
  • the magnetic field sensor further comprises a shielding layer covering the magnetoresistive element constituting the reference arm, the shielding layer being a ferromagnetic material with high magnetic permeability, the purpose of which is to reduce the magnetic field bundle of the reference component and increase the bridge sensor. Sensitivity.
  • the magnetic field sensor further includes a ferromagnetic material disposed at a periphery of the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the external field on the sensing element, thereby increasing the sensitivity of the magnetic field sensor.
  • a single-piece reference full-bridge magnetic field sensor includes two reference arms and two sensing arms, and two reference arms and two sensing arms are spaced and connected to each other Forming a full bridge, each bridge arm resistance consisting of one or more MTJ or GM: R_ magnetoresistive elements; MTJ or GMR magnetoresistive elements using a linear portion of their output curve to induce a magnetic field; reference arm element free layer upper layer Or depositing an antiferromagnetic layer or a permanent magnet layer, and the exchange coupling of the antiferromagnetic layer or the exchange coupling and the field coupling of the permanent magnetic layer biases the reference arm; the magnetic field sensor further includes a cladding reference The shielding layer of the magnetoresistive element of the arm, the shielding layer is a ferromagnetic material with high magnetic permeability; the pad of the magnetic field sensor can be connected to the package pin of the ASIC integrated circuit or the lead frame by wires.
  • the magnetic field sensor further comprises a ferromagnetic material disposed at a periphery of the magnetoresistive element constituting the sensing arm to converge the external field to increase the effect of the field on the sensing element, and increase the magnetic field sensor. Sensitivity.

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Description

单片参考全桥磁场传感器 技术领域
该发明涉及一种磁场探测用的传感器， 尤其为一种单片参考全桥磁场传感器。
背景技术
磁场传感器在现代系统中被广泛 ^于测量和探测物理量， 其中包括但不限于磁场强度、 电 流、 位置、 动力、 方向等参数的测量。 虽然目前有很多种传感器对磁场和其他物理参数进行 测量， 但是这些技术都有其局限性， ^如， 尺寸过大， 灵敏度低， 动态范围窄， 制造成本 高， 稳定性差以及其他缺点。 因此， 不断改善磁性传感器， 尤其是易与半导体器件和集成电 路集成的传感器， 以及其制造方法是一种持续的需求。
磁隧道结传感器具有高灵敏度， 尺寸小， 成本低以及功耗低等优点。 尽管 MTJ或 GMR与 半导体标准制造工艺相兼容， 但是高灵敏度的 MTJ 或 GMR传感器并没有实现低成本大规 模生产。 特别是传感器的成品率取决于 MTJ 或 GMR元件磁阻输出的偏移值， 组成电桥的 MTJ或 GMR元件的磁阻输出很难达到匹配度一致。
发明内容
本发明的目的是提供一种单片参考全桥磁场传感器， 该磁场传感器可以通过设置磁阻元件的 偏置场和敏感方向的角度来优化其线性度。
为达到上述目的， 本发明提供一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应 臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂由一个 或多个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线性部 分来感应磁场： 该磁场传感器还包括一设置在参考臂和感应臂周边的用于调整该磁场传感器 自身的磁化强度和敏感方向的角度的磁体； 该磁场传感器的焊盘可以通过引线连接到 ASK: 集成电路或引线框的封装弓 i脚上。
本发明又提供一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应臂， 两个参考臂和 两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂由一个或多个 MTJ 或 GM 磁电阻元件构成； MTJ 或 GMR 磁电阻元件是利用其输出曲线的线性部分来感应磁 场； 构成参考臂的磁电阻元件比构成感应臂的磁电阻元件更加细长； 该磁场传感器的焊盘可 以通过弓 ί线连接到 ASIC集成电路或引线框的封装引脚上。
本发明又提供一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应臂， 两个参考臂和 两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻由一个或多个 MTJ或 GMR 磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线性部分来感应磁场： 该磁 场传感器还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的铁磁材 料； 该磁场传感器的焊盘可以通过引线连接到 ASIC集成电路或引线框的封装引脚上。 本发明又提供一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂 ώ一个或多 个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线性部分来 感应磁场： 参考臂元件自由层上层或下层沉积了一层反铁磁层或永磁层， 利用反铁磁层的交 换耦合或永磁层的交换耦合和散场耦合对参考臂进行偏置； 该磁场传感器的焊盘可以通过引 线连接到 ASIC集成电路或引线框的封装引脚上。
本发明又提供一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻 ffl—个或多个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利 ¾其输出曲线的线性部分来感 应磁场； 参考臂元件自 层上层或下层沉积了一层反铁磁层或永磁层， 利用反铁磁层的交换 耦合或永磁层的交换耦合和散场耦合对参考臂进行偏置； 构成参考臂的磁电阻元件比构成感 应臂的磁电阻元件更加细长； 该磁场传感器的焊盘可以通过引线连接到 ASIC集成电路或引 线框的封装引脚上。
本发明又提供一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻由一个或多个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利 ]¾其输出曲线的线性部分来感 应磁场； 参考臂元件自 ώ层上层或沉积了一层反铁磁层或永磁层， 利用反铁磁层的交换稱合 或永磁层的交换耦合和散场耦合对参考臂进行偏置； 该磁场传感器还包括一包覆住构成参考 臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的铁磁材料； 该磁场传感器的焊盘可以通过引 线连接到 ASIC集成电路或引线框的封装引脚上。
通过使用该技术， 单片参考全桥磁场传感器展现出了温度稳定性， 低偏移电压以及优异的电 压对称性， 单片磁传感电桥可以用标准的半导体制造工艺轻易制造。
附图说明
图〗是磁化方向为难轴的参考层自旋阀传感元件的磁电阻输出示意图。
图 2是采用磁阻元件的参考全桥结构示意图。
图 3是参考全桥的感应臂和参考臂的输出曲线图。
图 4是参考全桥电路的输出曲线图。
图 5是参考臂和感应臂的磁电阻阻值比和偏移值的函数图， 其中列举了不同磁电阻变化率从 50%到 200%的偏移曲线图。 图 6是参考臂和感应臂的阻值比和对称性的函数图， 其中列举了不同磁电阻变化率从 50%到 200%的对称性曲线图。
图 7是 MTJ元件的偏置永磁体摆放位置示意图。
图 8是图 7所示的永磁体和 MTJ或 GMR元件的截面图， 图中描绘了一组偏置磁体的磁感 线分布图。
图 9描绘了通过设置永磁体和敏感方向的夹角来控制 Μ'Π元件输出的偏移和饱和场强度。 图】0是一组磁体中心区域场强的函数图， 该场强取决于磁体宽度和磁体间的间隙。
图 11是将多个 MTJ或 GMR元件合并为一个磁电阻元件的方法的连接示意图。
图 12 是传感芯片的布局图， 利用倾斜摆放磁体去设置参考臂和感应臂的偏置点进而优化电 桥输出曲线。
图 13是使 偏置磁体以及参考臂和感应臂的 MTJ或 GMR元件平行排列的布局图， 如图所 示在参考元件外设置屏蔽层以增加电桥电路灵敏度。
图 14是使用偏置磁体以及参考臂和感应臂的 MT.f 或 GMR元件垂直排列的布局图。
图 15是沿着椭圆形 MTJ或 GMR元件的长轴和短轴方向的饱和场的测量结果， 沿着短轴方 向有一个偏置场。
具体实施方式
图 1 是作线性磁场探测用的 GMR 或 ΜΤΠ 磁传感元件的输出曲线的一般形式。 如图 1 所 示， 输出曲线在低阻态 1和高阻态 2饱和， .和 RH分别代表低阻态和高阻态的阻值。 在达 到饱和之前， 输出曲线线性依赖于外加场 H , 输出曲线不一定是关于 H==0 的点对称的。 ¾ 是饱和场 5和 6之间的典型偏移， 这使得 的饱和值更接近 H 。 He值通常被称作 "桔子 皮效应 (Orange Peel) "或 "奈尔耦合 （Ned Coupling)", 其典型值通常在 1到 250e之间， 和 ΜΤ、ί或 GMR磁性薄膜的结构和平整度相关， 依赖于材料和刺备工艺。
在饱和场 5和 6之间， 如图 1所示的输出曲线方程近似为：
Figure imgf000005_0001
图 2是惠斯通参考电桥中传感元件的连接方式。 如图所示， 两个传感元件元件 20、 21 的输 出曲线强烈依赖于外加磁场， 两个参考元件元件 22、 23 对外场的感应很弱。 此外， 布局在 基板上的传感元件需要偏置电压 （Vbias, 24) 和接地 （GND, 25 ) 两个接触点和两个半桥 中心触点 （Vi， 26, V2, 7)。 中心触点的电压为：
Figure imgf000005_0002
(3)
R2snsiH)+R2r {H)
惠斯通参考电桥的输出为：
V{H)^ V\{H) ---V2{H) (4)
传感元件 Rs (30) 和参考元件 Rref (31) 的输出曲线如图 3所示。 其中 Rxef 的饱和场为 ^ =130 Oe, Rsiis的饱和场为 Γ=35 Oe。 同 传感元件和参考元件的输出曲线的中点并 不在磁场为零的区域， 其偏移范围为 Rsns的 /:i =80e, Rref的 / =25 Oe。 尽管具有偏移 值， 但是惠斯通电桥的输出曲线 40仍然具有很好的线性度和中心对称性， 如图 4所示。 在理想 下， « Rrf
Figure imgf000006_0001
m, 电
Href - Hins)
Figure imgf000006_0002
Figure imgf000006_0003
其中， "<<" 一个数量级:
<
Figure imgf000006_0004
实际上， 足够宽的线性区域就可以制造很好的线性传感器。 对于磁阻式传感器来说， 需要满 足 DR «150%以及 30Oe»iiT。 该磁场感应的线性范 需要遵从：
Figure imgf000006_0005
该装置作为一个没有校正的线性传感器， 利 ]¾上述典型值， 可以提供 ·个约 2.5 倍的线性工 作范围， 大于一般所需的工作范围。
参考全桥作为磁阻传感器因为其独特的性质其应 S将越来越广泛。 图 4也显示了参考电桥的 输出曲线 41沿着磁场方向具有偏移且输出电压关于 Y轴不对称。 这种非理想状态性质在使 用高磁阻变化率的磁电阻元件的参考全桥传感器中占有很大比例。
为了更好的描述非理想状态输出， 有助于提供优化参考电桥输出的方法， 需要定义一个偏移 补偿， 这样有益于量化输出电压的不对称性。 曲线 44 上可以清楚地看出电桥输出偏移 C OFFSET )o 如图 4所示， 可以通过利用最大和最小的输出电压值 V- (43)和 V+ (42)来定义 不对称性 （ASYM V, + V
ASYM : 100%
V+― V_
如图 5所示， 电桥传感器的偏移值是: Ρ·参考臂和感应臂的阻值比的函数， 图中列举了不同 电阻变化率下的曲线图， 该图是在 ' H = 0 Oe的理想状态下绘制的。 尽管参考元件和 传感元件输出曲线可以中心化， 但是电桥输出的偏移依然随着参考元件和传感元件的阻值比 进行改变。
图 6是电桥传感器在相同状态下输出电压的对称性函数图。 同样的， 尽管参考元件和传感元 件输出曲线可以中心化， 但是电桥输出会随着参考元件和传感元件的阻值比呈现出巨大的不 对称性。 因此， 实际上输出曲线的中心化不一定是偏移的最小值， 这取决于不同传感元件和 参考元件阻值的阻值比。
理想的参考桥式传感器 ώ不同饱和场的参考元件和传感元件构成， 参考元件和传感元件的阻 值设置为一个预设的比例， 这一比例可能不是 1 , 同时偏置磁场可以 ^来调整传感元件相对 于参考元件的响应。
个电桥传感器首先必须能够设置传感元件和参考元件的相关灵敏度。 磁阻元件的灵敏度是 阻值随外加磁场变化的函数。 具体来说是；
AR/R,
5 , (11)
2Η
改变参考元件和传感元件的 DR/R是不实际的， 因此可以通过改变 Hs来改变灵敏度。 这种 方法可以通过几种不同技术的结合来实现。
屏蔽层一一将高磁导率的铁磁层沉积在参考元件的顶部， 以降低外加场强。
形状各项异性能——由于参考元件和 MTJ传感元件具有不同的尺寸因此具有不同的形状各 向异性能。 最普遍的做法是使参考元件的长轴长度大于传感元件的长轴长度， 短轴长度小于 传感元件的短轴长度， 因此参考元件平行于敏感方向的退磁效应要远大于传感元件。
交换偏置——该技术是通过磁隧道结自 ώ层和相邻的反铁磁或永磁层的交换耦合建立一个有 效的垂直于敏感方向的外场。 可以在自 ώ层和交换偏置层间设置 Cii或 Ta的隔离层来降低交 换偏置强度。 多层膜结构分述如下- 种子层 /反铁磁层 1/铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /隔离层 /反铁磁层 2/保护层
种子层 /反铁磁层 i/铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /隔离层 /磁偏置层 /保护层
种子层 /反铁磁层 1/铁磁层 铁磁层 /绝缘层 /铁磁层 /反铁磁层 2/保护层
种子层 /反铁磁层 1/铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /磁偏置层 /保护层
其中， 反铁磁层 ： ( AF1 ) 和反铁磁层 2 ( AF2 ) 采 ]¾反铁磁材料， 例如 PtMru IrMn , FeMn。 铁磁层采用一些具有代表性的由铁磁合金构成的铁磁薄膜或多层膜， 包括但不限于 NiFe、 CoFeB、 CoFe 以及 NiFeCo。 绝缘层可以是任何能够自旋极化的绝缘材料， 倒如 Al2()3或 MgO。 隔离层通常是采用 、 Ilu或 Cii这种非铁磁材料的薄膜。 不同反铁磁层的 AF2的反铁磁阻隔温度 （Blocking Temperature ) 要低于 AF2， 使得铁磁层 /Ru/铁磁层结构的 钉扎层的偏置场和自由层的偏置场呈正交垂直。
散场偏置一一在该技术中， Fe、 Co , Cr以及 Pt的合金永磁材料沉积在传感元件表面或 MTJ 栈上， 用来提供一个散磁场给 MTJ 元件的输出曲线造成偏置。 永磁偏置的优点在于永磁偏 置磁体可以在电桥形成后初始化一个大磁场。 另外一个非常重要的优势是偏置场可以被用来 消除 MTJ元件的磁畴从而稳定和线性化 MTJ或 GMR元件的输出。 该设计的巨大优点在于 其在设计调整上具有很大的灵活性。 下面的多层膜系列设计是可以实现的：
种子层 /反铁磁层 1/铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /厚隔离层 /磁偏置层 /保护层。
如图 9 所示， 当使用交叉偏置场设定 MTJ 或 GMR 元件的灵敏度时， 交叉偏置场中的 Hcross和 Hs存在以下关系；
Hs ^ ~r - + HcrGSS (12)
Ms '
其中 Ks 是自由层的形状各项异性， Ms 是自由层的饱和磁化强度。 因此， 灵敏度反比于 Hcross, ：
(13)
Figure imgf000008_0001
个提供 11„ 的首选办法如图 7所示。 磁电阻传感器安置在两个永磁体 71之间。 永磁体具 有宽度 （W ) 73 , 厚度 (0 74 , 长度 ( Ly) 75 以及永磁体之间的间隙 （Gap ) 72 这四个参 数。 永磁体被设计为提供一个垂直于电桥传感器敏感轴 76 的交叉偏置场。 通过施加一个大 磁场初始化磁体， 因此其磁场 77垂直于电桥传感器的敏感方向 76。 最终永磁体 71 周围的 磁场分布 80如图 8所示。
永磁体的磁场被认为是在如图 9所示的磁体的边缘 90和 91形成的虛拟磁荷和磁化边界条件 作用的结果。 磁荷大小随着剩磁 Mr的大小和方向 qmag92进行变化， 并 ϋ与永磁体的倾斜 角 (" qre "或 " qs'ns") 相关：
Figure imgf000008_0002
^ Mr cos(K ) (14) 虚拟磁荷产生的磁场为:
Fl(r)二 4/τ
Figure imgf000009_0001
当 q™g= qref 或 qref = " /2 MTJ元件的中心磁场强度为剩磁 Mr的函数 :
Figure imgf000009_0002
(16)
公式 16是图 0所示的 Wi3和 gaP72的函数， 该函数表示参考元件和传感元件的饱和场可 以通过改变磁体 71的形状维度相互影响而改变。 使用相同的 ! νίΤ,ί元件栈、 MTJ :三维尺寸以 及永磁体薄膜在参考元件和传感元件上， 在不同的 HCTQSS100和 101的作 ]¾下， 参考元件的饱 和场是传感元件的 6,5倍。 这个比值对干参考电桥来说是足够的， 而旦通过适当的设计可以 将这个比值增加到 10。
图 9表明了通过设置磁体和敏感方向的夹角， 可以同时产生 HCT。SS95和偏移场 Η。^)6， 是为 了设定 MTJ或 GMR元件的饱和场， 另夕卜使 MTJ元件的输出曲线归零， 该方法是为了优化 电桥输出的对称性、 偏移和灵敏度。 此外， 设置剩磁 Mr和敏感方向的夹角 92 是为了在传 感芯片制备以后， -可以提供一个微调装置能够最小化偏移值或对称性， 这种方法可以提高产 品优率。
因为尺寸很小， Μ'Π或 GM R元件可以串联起来以增加灵敏度， 减小 1/F的噪音， 同时改善 如图 11所示的抗静电能力。 ΜΤΠ元件】10是基底〗11和上电极】12之间的三明治结构的薄 膜， 同时电流 113是垂直流过 MTJ元件 110的上电极和基底间的导电层。 在参考臂和感应 臂上保持 MTJ 或 GMR元件的尺寸相同的优点在于这样可以使器件在制备过程中对刻蚀偏 置不敏感， 这些串联的 MTJ 或 GMR 元件的另一个优点在于， 每个串联组合的元件数量是 可以改变的， 以设置参考元件和传感元件间的最优电阻比。
图 12 是采用不同宽度的倾斜磁体和不同传感元件间距的标准芯片布局， 以制备最优的参考 全桥传感器。 在该设计中， 串联的 ΜΤ、ί 或 GMR 元件位于永磁体之间， 这些永磁体位于参 考臂】 22、 123以及感应臂 124、 125之间呈一定角度倾斜。 通过优化可以实现参考元件和传 感元件偏移的归零化， 该磁场传感器可以预先设置参考臂和感应臂的磁电阻元件个数以调节 参考臂和感应臂的阻值， 从而调 其阻值比。
因为构成参考臂磁电阻元件和构成感应臂磁电阻元件是由磁电阻元件串联而成， 每个磁电阻 元件的阻值是一定的， 串联的数量决定其阻值， 或者仅仅是将参考臂和感应臂偏移。 因此， 参考臂包括一个或多个磁电阻元件相串联以调节参考臂的阻值， 感应臂包括一个或多个磁电 阻元件相串联以调节感应臂的阻值， 参考臂和感应臂的阻值比可以通过设置不同数量的磁电 阻元件以调节。 如公式 (4)所示， 通过设置相关的桥臂偏移， 电桥输出可以中心化而 可以 达到相对的对称， 如下式所示：
Figure imgf000010_0001
当 qrei == 3ΐ /2， qsns在 τι /4和 3ΐ /2之间时可以成立。
如图 3所示是另一种不同的参考全桥设计， 该设计设置了屏蔽层 131、 132以及不同的偏置 磁体 134、 135 , 用来设置参考臂和感应臂的饱和场。 屏蔽层和窄宽度的磁体用来降低参考 臂的灵敏度， 相比于单独使用屏蔽层或者磁偏置可以降低 10 倍。 一般来说屏蔽磁场最好的 料是高磁导率的铁磁材料。 参考臂和感应臂的灵敏度差异可以通过其他的偏置方式大大增 加， 例如改变交换耦合或者形状各项异性能。 通过将感应臂元件置于高磁导率的铁磁材料的 间隙， 可以对外场有聚磁作用， 从而提高其灵敏度。
图 14 展示了另一种用来构建高灵敏度传感器的可以改变的芯片布局， 通过利用形状各向异 性能和磁偏置场的矢量和来构建一个低的 HT。 传感元件〗 41、 142与参考元件 143、 144呈 90 度角排列。 在感应臂上设计磁体是为了使 MTJ 或 GMR 元件在垂直敏感方向上达到饱 和。 沿着敏感方向 145的偏置场用来使传感元件的磁化强度沿敏感方向 145成比例倾斜。 图 15 是沿着椭圆形 MTJ 或 GMR 元件的长轴 （6nm) 和短轴 （2nm) 的饱和场的测量结 果， 沿着短轴有一个交叉偏置场。 〗51和 152是自由层厚度分别为 8iim和 16m i的曲线。 通 过合适的设计， 可以在一个狭窄的场强范围内制造高灵敏度的线性传感器。
本发明的第一实施例中， 一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应臂， 两 个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂 一个或多个 MTJ或 GMR磁电阻元件构成； ΜΊΠ或 GMR磁电阻元件是利 其输出曲线的线性部分来感 应磁场； 该磁场传感器还包括一设置在参考臂和感应臂周边的用于调整该磁场传感器自身的 磁化强度和敏感方向的角度的磁体； 该磁场传感器的焊盘可以通过引线连接到 ASIC集成电 路或引线框的封装引脚上。
优选地， 该参考臂和感应臂采用相同工艺歩骤制备以提高温度的稳定性和元件的一致性。 参 考臂包括一个或多个磁电阻元件相串联以调节参考臂的阻值， 感应臂包括一个或多个磁电阻 元件相串联以调节感应臂的阻值， 参考臂和感应臂的阻值比可以通过设置不同数量的磁电阻 元件调节该磁场传感器还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导 率的铁磁材料， 其目的是降低参考元件的磁场从而增加电桥传感器的灵敏度。 该磁场传感器 设置在构成感应臂的磁电阻元件周边的高磁导率的铁磁材料对外场起聚磁作用， 以增加外场 对传感元件的作用， 从而增加磁场传感器的灵敏度。
本发明的第二实施例中， 一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应臂， 两 个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂由一个或多个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线性部分来感 应磁场； 构成参考臂的磁电阻元件比构成感应臂的磁电阻元件更加细长； 该磁场传感器的焊 盘可以通过引线连接到 ASIC集成电路或引线框的封装引脚上。
优选地， 参考臂和感应臂采用相同工艺步骤制备以提高温度的稳定性和元件的一致性。 参考 臂包括一个或多个磁电阻元件相串联以调节参考臂的阻值， 感应臂包括一个或多个磁电阻元 件相串眹以调节感应臂的阻值， 参考臂和感应臂的阻值比可以通过设置不同数量的磁电阻元 件调节。 该磁场传感器还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导 率的铁磁材料， 其目的是降低参考元件的磁场 而增加电桥传感器的灵敏度。 该磁场传感器 还包括设置在构成感应臂的磁电阻元件周边的高磁导率的铁磁材料对外场起聚磁作用， 以增 加夕卜场对传感元件的作用， 而增加磁场传感器的灵敏度。
本发明的第 Ξ:实施例， 一种单片参考全桥磁场传感器， 包括两个参考臂和两个感应臂， 两个 参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻由一个或多个 MTJ- 或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线性部分来感应磁 场； 该磁场传感器还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的 铁磁材料； 该磁场传感器的焊盘可以通过引线连接到 AS: C 集成电路或弓 i线框的封装引脚 优选地， 参考臂包括一个或多个磁电阻元件相串联以调节参考臂的阻值， 感应臂包括一个或 多个磁电阻元件相串联以调节感应臂的阻值， 参考臂和感应臂的阻值比可以通过设置不同数 量的磁电阻元件调节。 该磁场传感器还包括设置在构成感应臂的磁电阻元件周边的高磁导率 的铁磁材料对外场起聚磁作用， 以增加外场对传感元件的作用， 从而增加磁场传感器的灵敏 度。
本发明的第四实施例， 一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两个 感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 参考臂和感应臂由 个或多个 MT f 或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线 性部分来感应磁场； 参考臂元件自由层上层或下层沉积了一层反铁磁层或永磁层， 利 ]¾反铁 磁层的交换耦合或永磁层的交换耦合和散场耦合对参考臂进行偏置； 该磁场传感器的焊盘可 以通过弓 i线连接到 ASIC集成电路或引线框的封装引脚上。
优选地， 构成参考臂的磁电阻元件比构成感应臂的磁电阻元件更加细长。 该磁场传感器还包 括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的铁磁材料， 其目的是降 低参考元件的磁场从而增加电桥传感器的灵敏度。 该磁场传感器还包括设置在构成感应臂的 磁电阻元件周边的高磁导率的铁磁材料对外场起聚磁作用， 以增加外场对传感元件的作用， 从而增加磁场传感器的灵敏度。
本发明的第五实施例中， 一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两 个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻由 一个或多个 MTJ或 GMR磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线 性部分来感应磁场； 参考臂元件自由层上层或下层沉积了一层反铁磁层或永磁层， 利用反铁 磁层的交换耦合或永磁层的交换耦合和散场耦合对参考臂进行偏置； 构成参考臂的磁电阻元 件比构成感应臂的磁电阻元件更加细长； 该磁场传感器的焊盘可以通过引线连接到 ASIC集 成电路或引线框的封装引脚上。
优选地， 该磁场传感器还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导 率的铁磁材料， 其目的是降低参考元件的磁场丛而增加电桥传感器的灵敏度。 该磁场传感器 还包括设置在构成感应臂的磁电阻元件周边的高磁导率的铁磁材料对外场起聚磁作用， 以增 加外场对传感元件的作用， 丛而增加磁场传感器的灵敏度。
本发明的第六实施例中， 一种单片参考全桥磁场传感器， 该磁场传感器包括两个参考臂和两 个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全桥， 每个桥臂电阻由 一个或多个 MTJ或 GM:R_磁电阻元件构成； MTJ或 GMR磁电阻元件是利用其输出曲线的线 性部分来感应磁场； 参考臂元件自由层上层或沉积了一层反铁磁层或永磁层， 利 反铁磁层 的交换耦合或永磁层的交换耦合和散场耦合对参考臂进行偏置； 该磁场传感器还包括一包覆 住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的铁磁材料； 该磁场传感器的焊盘 可以通过引线连接到 ASIC集成电路或引线框的封装引脚上。
优选地， 该磁场传感器还包括设置在构成感应臂的磁电阻元件周边的高磁导率的铁磁材料对 外场起聚磁作用， 以增加夕卜场对传感元件的作用， 而增加磁场传感器的灵敏度。
以上对本发明的特定实施例结合图示进行了说明， 很明显， 在不离开本发明的范围和精神的 基础上， 可以对现有技术和工艺进行很多修改。 在本发明的所属技术领域中， 只要掌握通常 知识， 就可以在本发明的技术要旨范围内， 进行多种多样的变更。

Claims

权利要求-
1. ·种单片参考全桥磁场传感器， 该磁场传感器的焊盘可以通过引线连接到 ASIC集成电路 或引线框的封装引脚上， 所述磁场传感器包括：
两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全 桥， 各参考臂和感应臂由一个或多个 MTJ或 GMR磁电阻元件构成， MTJ或 GMR磁电阻 元件利用其输出曲线的线性部分来感应磁场；
一设置在参考臂和感应臂周边的用于调整磁场传感器自身的磁化强度和敏感方向的角度 的磁体。
2. 如权利要求 i 所述的磁场传感器， 其中， 参考臂和感应臂采 ]¾相同工艺步骤制备以提高 温度的稳定性和元件的一致性。
3. 如权利要求 1 所述的磁场传感器， 其中， 参考臂包括一个或多个磁电阻元件相串联以调 节参考臂的阻值， 感应臂包括一个或多个相串联的磁电阻元件以调节感应臂的阻值， 参考臂 和感应臂的阻值比可以通过设置不同数量的磁电阻元件调节》
4. 如权利要求 1 所述的磁场传感器， 其中， 构成参考臂的磁电阻元件比构成感应臂的磁电 阻元件更加细长。
5. 如权利要求 1 或 4所述的磁场传感器， 还包括一包覆住构成参考臂的磁电阻元件的屏蔽 层， 屏蔽层为高磁导率的铁磁材料。
6. 如权利要求 5 所述的磁场传感器， 其特设置在构成感应臂的磁电阻元件周边的高磁导率 的铁磁材料以增大外场。
7. 一种単片参考全桥磁场传感器， 其焊盘可以通过引线连接到 AS】C集成电路或引线框的封 装引脚上， 所述磁场传感器包括：
两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并连接以形成一全 桥， 各参考臂和感应臂分别由一个或多个 MTJ或 GMR磁电阻元件构成， MTJ或 GMR磁电 阻元件是利用其输出曲线的线性部分来感应磁场， 构成参考臂的磁电阻元件比所述构成感应 臂的磁电阻元件更加细长。
8. 如权利要求 7 所述的磁场传感器， 其中， 参考臂和感应臂采用相同工艺步骤制备以提高 温度的稳定性和元件的一致性。
9. 如权利要求 7 所述的磁场传感器， 其中， 参考臂包括一个或多个磁电阻元件相串联以调 参考臂的阻值， 感应臂包括一个或多个磁电阻元件相串联以调节感应臂的阻值， 参考臂和 所述感应臂的阻值比可以通过设置不同数量的磁电阻元件调节。
10. 如权利要求 Ί所述的磁场传感器， 还包括一包覆住构成参考臂的磁电阻元件的屏蔽层， 屏蔽层为高磁导率的铁磁材料。
11. 如权利要求 10 所述的磁场传感器， 还包括设置在构成感应臂的磁电阻元件周边的高磁 导率的铁磁材料以增大外场。
12. 一种单片参考全桥磁场传感器， 其焊盘可以通过引线连接到 ASIC 集成电路或引线框的 封装引脚上， 所述磁场传感器包括- 两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全 桥， 其中每个桥臂电阻由一个或多个 MTJ或 GMR磁电阻元件构成， MTJ或 GMR磁电阻元 一包覆住构成参考臂的磁电阻元件的屏蔽层， 所述屏蔽层为高磁导率的铁磁材料。
13. 如权利要求 12 所述的磁场传感器， 其中， 参考臂包括一个或多个磁电阻元件相串联以 调节参考臂的阻值， 感应臂包括一个或多个磁电阻元件相串联以调节感应臂的阻值， 参考臂 和所述感应臂的阻值比可以通过设置不同数量的磁电阻元件调节。
14. 如权利要求 】2 所述的磁场传感器， 还包括设置在构成感应臂的磁电阻元件周边的高磁 导率的铁磁材料以增大外场。
15. 一种单片参考全桥磁场传感器， 其磁场传感器的焊盘可以通过引线连接到 ASIC 集成电 路或引线框的封装引脚上， 该磁场传感器包括：
两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔连接以形成一全桥， 参考臂 和感应臂由 ·个或多个 MTJ或 GMR磁电阻元件构成， ΜΉ或 GMR磁电阻元件利用其输出 曲线的线性部分来感应磁场， 参考臂元件自由层上层或下层沉积了一层反铁磁层或永磁层， 利用反铁磁层的交换耦合或永磁层的交换耦合和散场耦合对参考臂迸行偏置该。
1 . 如权利要求 15 所述的磁场传感器， 其中， 构成参考臂的磁电阻元件比构成感应臂的磁 电阻元件更加细长。
17. 如权利要求 16 所述的磁场传感器， 还包括一包覆住构成参考臂的磁电阻元件的屏蔽 层， 屏蔽层为高磁导率的铁磁材料。
18. 如权利要求 17 所述的磁场传感器， 还包括设置在构成感应臂的磁电阻元件周边的高磁 导率的铁磁材料以增大外场。
19. 一种单片参考全桥磁场传感器， 其焊盘可以通过引线连接到 ASIC 集成电路或引线框的 封装引脚上， 该磁场传感器包括- 两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全 桥， 每个桥臂电阻由一个或多个 MTJ或 GMR磁电阻元件构成， MTJ或 GMR磁电阻元件是 利用输出曲线的线性部分来感应磁场， 参考臂元件自由层上层或下层沉积了一层反铁磁层或 永磁层， 利用所述反铁磁层的交换耦合或所述永磁层的交换耦合和散场耦合对参考臂迸行偏 置， 构成参考臂的磁电阻元件比构成感应臂的磁电阻元件更加细长。
20. 如权利要求 19 所述的磁场传感器， 还包括一包覆住构成参考臂的磁电阻元件的屏蔽 层， 屏蔽层为高磁导率的铁磁材料。
21. 如权利要求 20 所述的磁场传感器， 还包括设置在构成感应臂的磁电阻元件周边的高磁 导率的铁磁材料以增大外场。
22. 一种单片参考全桥磁场传感器， 其磁场传感器的焊盘可以通过引线连接到 ASIC 集成电 路或引线框的封装引脚上， 该磁场传感器包括：
两个参考臂和两个感应臂， 两个参考臂和两个感应臂相间隔地排列并相连接以形成一全 桥， 每个桥臂电阻由一个或多个 ΜΤ,ί或 GMR磁电阻元件构成， MTJ或 GMR磁电阻元件利 用其输出曲线的线性部分来感应磁场， 参考臂元件自由层上层或沉积了一层反铁磁层或永磁 层， 利用所述反铁磁层的交换耦合或所述永磁层的交换耦合和散场耦合对参考臂进行偏置； 一包覆住钩成参考臂的磁电阻元件的屏蔽层， 所述屏蔽层为高磁导率的铁磁材料。
23. 如权利要求 22 所述的磁场传感器， 还包括设置在构成感应臂的磁电阻元件周边的高磁 导率的铁磁材料以增大外场。
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