WO2015096744A1 - 一种用于高强度磁场的单芯片参考桥式磁传感器 - Google Patents

一种用于高强度磁场的单芯片参考桥式磁传感器 Download PDF

Info

Publication number
WO2015096744A1
WO2015096744A1 PCT/CN2014/094838 CN2014094838W WO2015096744A1 WO 2015096744 A1 WO2015096744 A1 WO 2015096744A1 CN 2014094838 W CN2014094838 W CN 2014094838W WO 2015096744 A1 WO2015096744 A1 WO 2015096744A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic sensor
chip
bridge
string
sensing
Prior art date
Application number
PCT/CN2014/094838
Other languages
English (en)
French (fr)
Inventor
迪克詹姆斯·G
Original Assignee
江苏多维科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to US15/108,162 priority Critical patent/US10024930B2/en
Priority to EP14874846.0A priority patent/EP3088908B1/en
Priority to JP2016542947A priority patent/JP6509231B2/ja
Publication of WO2015096744A1 publication Critical patent/WO2015096744A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present invention relates to the field of magnetic sensor technology, and in particular to a single-chip reference bridge magnetic sensor for use in a high-intensity magnetic field.
  • Magnetic sensors are widely used in modern industrial and electronic products to measure magnetic field strength to measure physical parameters such as current, position, and direction.
  • sensors for measuring magnetic fields and other parameters such as Hall elements, Anisotropic Magneto resistance (AMR) components or Giant Magneto resistance (Giant Magneto resistance,
  • the GMR component is a magnetic sensor of the sensitive component.
  • the Hall magnetic sensor can work in a high-intensity magnetic field, it has disadvantages such as low sensitivity, high power consumption, and poor linearity.
  • the sensitivity of the AMR sensor is higher than that of the Hall sensor, its manufacturing process is complicated, its power consumption is high, and it is not suitable for high-intensity magnetic fields.
  • GMR magnetic sensors have higher sensitivity than Hall magnetic sensors, but their linear range is low and they are not suitable for high-intensity magnetic fields.
  • the TMR (Tunnel Magneto Resistance) magnetic sensor is a new magnetoresistance effect sensor that has been industrially applied in recent years. It uses the tunnel magnetoresistance effect of the magnetic multilayer film material to sense the magnetic field, which is relative to the Hall magnetic sensor and AMR magnetic. Sensors and GMR magnetic sensors offer higher sensitivity, lower power consumption, better linearity and a wider operating range. However, existing TMR magnetic sensors are still not suitable for operation in high-intensity magnetic fields, and the linear range is not wide enough.
  • the present invention provides a single-chip reference bridge magnetic sensor for a high-intensity magnetic field, the sensor comprising:
  • At least one reference arm deposited on the substrate comprising a reference element string having at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements;
  • At least one sensing arm deposited on the substrate comprising a string of sensing elements having at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements;
  • At least one attenuator and at least two shielding structures the attenuators being arranged at a staggered interval from the shielding structure, the attenuator and the shielding structure having the same shape, the width and the area of the shielding structure being respectively compared The width and area of the attenuator are large;
  • the reference arm is connected to the sensing arm to form a bridge
  • Each of the reference component strings is correspondingly provided with a shielding structure, and each of the sensing component strings is correspondingly provided with an attenuator, the reference component string is located below or above the shielding structure, and the sensing component string is located at the Below or above the attenuator;
  • the reference element string and the sensing element string have the same number of rows/columns and are arranged in a longitudinal or lateral direction; the gain coefficient of the magnetic field at the sensing element string is greater than the gain coefficient of the magnetic field at the reference element string.
  • the reference element string and the magnetoresistive sensing element constituting the sensing element string are one selected from the group consisting of AMR, GMR, and TMR sensing elements.
  • the magnetoresistive sensing element is one of a GMR spin valve structure, a GMR multilayer film structure, a TMR spin valve structure, and a TMR three-layer film structure.
  • the bridge is a half bridge, a full bridge or a quasi bridge.
  • each of the sensing element strings and the adjacent reference element strings are spaced apart by a distance L.
  • L the number of the attenuators
  • two reference element strings are adjacent in the middle.
  • the spacing between the two is 2L.
  • the number of the attenuators is even, two of the sensing element strings are adjacent in the middle and the spacing between the two is 2L.
  • the number N of the attenuators is not less than the number of rows/columns of the sensing element strings
  • the number M of the shielding structures is not less than the number of rows/columns of the reference component strings, and N ⁇ M, where N and M are positive integers.
  • the substrate comprises an integrated circuit or is connected to other substrates including integrated circuits.
  • the integrated circuit is one of CMOS, BiCMOS, Bipolar, BCDMOS and SOI, and the reference arm and the sensing arm are directly deposited on the integrated circuit of the substrate.
  • the substrate is an ASIC chip
  • the ASIC chip includes any one or at least two of an offset circuit, a gain circuit, a calibration circuit, a temperature compensation circuit, and a logic circuit.
  • the logic circuit is a digital switch circuit or a rotation angle calculation circuit.
  • the shape of the shielding structure and the attenuator are both elongated arrays extending in the transverse/longitudinal direction.
  • the shielding structure and the attenuator have the same constituent materials, all of which are soft ferromagnetic alloys, and the soft ferromagnetic alloy contains one element or at least two elements of Ni, Fe and Co.
  • the input/output connection end of the single-chip reference bridge magnetic sensor is electrically connected to the input/output connection end of the semiconductor package, and the method of the semiconductor package includes pad wire bonding, flip chip, ball grid array package, Wafer-level package or chip-on-board package.
  • the single-chip reference bridge magnetic sensor has a working magnetic field strength of 20 to 500 Gauss.
  • the shielding structure completely covers the reference element string.
  • the present invention has the following beneficial effects: low power consumption, good linearity, wide working range, and high magnetic field.
  • FIG. 1 is a schematic structural view of a single-chip bridge type magnetic sensor in the prior art.
  • FIG. 2 is a schematic structural view of a single-chip reference bridge type magnetic sensor of the present invention.
  • FIG. 4 is a magnetic field distribution diagram of a single-chip reference bridge magnetic sensor of the present invention in an external magnetic field.
  • Figure 5 is a graph showing the relationship between the position of the reference element string and the sensing element string and the corresponding gain coefficient in the present invention.
  • FIG. 6 is a graph showing the relationship between the position of the reference element string and the sensing element string and the corresponding gain coefficient in the prior art.
  • Figure 7 is a response curve of the magnetoresistive sensing element of the TMR and GMR spin valve structures.
  • Fig. 8 is a response curve of a magnetoresistive sensing element of a TMR three-layer film structure and a GMR multilayer film structure.
  • Figure 9 is a response curve of a magnetoresistive sensing element of the AMR Barber-pole (similar to a rotating color column at the door of a barbershop).
  • Fig. 10 is a graph showing the conversion characteristic of the magnetic sensor with or without an attenuator of the TMR spin valve structure of the present invention.
  • Figure 11 is a graph showing the conversion characteristics of a magnetic sensor with or without an attenuator of the TMR three-layer film structure of the present invention.
  • FIG. 1 is a schematic structural view of a single-chip bridge type magnetic sensor disclosed in the prior art patent application 201310203311.3.
  • the sensor comprises a substrate 1, a sensing element string 2, a reference element string 3, a shielding structure 4, an electrical connection conductor 6, and four pads 7-10 for input and output connections, respectively as a power supply terminal Vbias, a ground terminal GND , voltage output terminal V+, V-.
  • the sensing element string 2 and the reference element string 3 are alternately discharged, the sensing element string 2 is located at the gap of the two shielding structures 4, and the reference element string 3 is located below the shielding structure 4.
  • the sensing arm, the reference arm and the pads 7-10 are connected by an electrical connection conductor 6.
  • the sensor has the advantages of high sensitivity, good linearity, small offset, etc., but it is easy to be saturated, and its applicable maximum magnetic field strength is about 100 Gauss, which cannot be used in a higher-intensity magnetic field.
  • FIG. 2 is a schematic structural view of a single-chip reference bridge type magnetic sensor in the present invention. It differs from the sensor shown in FIG. 1 in that the sensor further includes an attenuator 5, which is arranged spaced apart from the shielding structure 4, and the number N of the attenuators 5 is not less than the row of the sensing element string 2. / the number of columns, the number M of the shield structure 4 is not less than the number of rows/columns of the reference element string 3, and N ⁇ M, N and M are both positive integers, and N in FIG. 2 is 5 and M is 6.
  • the attenuator 5 has the same shape as the shielding structure 4, preferably an elongated array extending in the horizontal/longitudinal direction, and the constituent materials thereof are also the same, and are all composed of one element or several elements selected from the group consisting of Ni, Fe and Co.
  • the soft ferromagnetic alloy may also be a non-ferromagnetic material, but is not limited to the above materials.
  • the sensing element string 2 and the reference element string 3 are each formed by at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements.
  • the magnetoresistive sensing element is an AMR, GMR or TMR sensing element.
  • the sensing element string 2 and the reference element string 3 are alternately discharged, and each sensing element string 2 and the adjacent reference element string 3 are spaced apart by a distance L, but for an odd number of attenuators 5 as shown in FIG.
  • two sensing element strings 2 are adjacent in the middle with a spacing of 2L therebetween.
  • the pitch L is small, preferably 20 to 100 ⁇ m.
  • Each of the sensing element strings 2 is correspondingly provided with an attenuator 5, and each of the reference element strings 3 is correspondingly provided with a shielding structure 4, and the sensing element string 2 and the reference element string 3 are respectively placed above the attenuator 5 and the shielding structure 4. Or below, the situation shown below is shown in Figure 2.
  • the width and area of the shielding structure 4 are larger than the width and area of the attenuator 5, which is large enough to be able to reference elements
  • the string 3 is completely covered, so that the magnetic field at the reference element string 3 can be largely attenuated or even completely shielded, and the magnetic field sensed by the sensing element string 2 is attenuated by the attenuator 5, but The attenuation amplitude is not so large that the gain coefficient Asns of the magnetic field at the inductive element string 2 is greater than the gain coefficient Aref of the magnetic field at the reference element string 3.
  • the sensing arm formed by interconnecting the sensing element string 2 and the reference element string 3 are electrically connected to each other to form a bridge.
  • the input and output terminals of the bridge are respectively the power supply terminal Vbias 7, the ground terminal GND 8, and the voltage. Output V+9, V-10.
  • the components on the sensor are connected by an electrical connection conductor 6.
  • An integrated circuit may also be printed on the substrate 1 or may be connected to another substrate printed with an integrated circuit.
  • the printed integrated circuit may be a CMOS or BiCMOS (bipolar complementary metal oxide semiconductor). Bipolar complementary metal oxide semiconductor), Bipolar, BCDMOS (bipolar-CMOS-DMOS structure) or SOI (Silicon-On-Insulator), reference arm and sensor arm It is deposited directly on the integrated circuit of the substrate 1.
  • the substrate 1 may also be an application specific integrated circuit ASIC chip, which includes any one or several application circuits of an offset circuit, a gain circuit, a calibration circuit, a temperature compensation circuit, and a logic circuit, wherein the logic circuit may also be a digital circuit.
  • the switching circuit or the rotation angle calculating circuit is not limited to the above circuit.
  • pads are used for input/output connection, and semiconductor package methods such as flip chip, ball grid array package, wafer level package, and chip package are also available.
  • the sensor is suitable for use in magnetic fields from 20 to 500 Gauss.
  • FIG. 4 is a magnetic field distribution diagram of the sensing element string 2 and the reference element string 3 in an applied magnetic field.
  • the direction of the applied magnetic field is 11.
  • the magnetoresistive sensing element constituting the inductive element string 2 and the reference element string 3 is a TMR sensing element.
  • the magnetic field at the reference element string 3 is greatly attenuated by the shielding structure, and the attenuation of the magnetic field at the sensing element string 2 is smaller than that of the former.
  • Fig. 5 is a graph showing the relationship between the position of the inductive element string 2 and the reference element string 3 corresponding to Fig. 4 and the gain coefficient at the corresponding position.
  • the gain coefficient Asns of the magnetic field amplitude at the sensing element string 2 and the gain coefficient Aref of the magnetic field amplitude at the reference element string 3 are both between 0 and 1, wherein the gain coefficient Asns is greater than Aref, That is to say, the amplitude of the attenuation of the magnetic field at the reference element string 3 is larger than that of the magnetic field at the sensing element string 2, which is consistent with the conclusion obtained from FIG.
  • FIG. 6 is a graph showing the relationship between the position of the sensing element string 2 and the reference element string 3 of the sensor structure corresponding to FIG. 1 and the gain coefficient at the corresponding position.
  • the number of reference element strings 3 and sensing element strings 2 is the same as in FIG. Comparing the two curves 12 and 13 in Figs. 5 and 6, it can be found that the amplitude of the magnetic field at the sensing element string 2 in the present invention is greatly attenuated, so that even the single-chip reference bridge magnetic sensor of the present invention is placed at a high level.
  • the magnitude of the magnetic field sensed by the sensor is the attenuated magnetic field, and the sensor can still work normally as long as it is within its saturation range.
  • Fig. 7 is a response curve when the magnetoresistive sensing element is a TMR and GMR spin valve structure.
  • the direction of the applied magnetic field 11 is parallel to the magnetization direction 19 of the pinned layer, and the intensity of the applied magnetic field is greater than -Bs+Bo 25, the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is parallel, and the magnetoresistance of the TMR element is the smallest, that is, R L 21 .
  • the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is anti-parallel, and the magnetoresistance of the TMR element is the largest, that is, R H 22.
  • the intensity of the applied magnetic field 11 is Bo 23
  • the magnetization direction 18 of the magnetic free layer is perpendicular to the magnetization direction 19 of the pinned layer.
  • the magnetic resistance of the TMR element is the intermediate value of R L 21 and R H 22, that is ( R L +R H )/2.
  • the magnetic field between -Bs+Bo 25 and Bs+Bo 26 is the measurement range of a single-chip linear bridge magnetic field sensor. As can be seen from the figure, the curve 20 is linear between -Bs+Bo 25 and Bs+Bo 26.
  • the resistance change rate can be up to 200%, and for the GMR spin valve, the resistance change rate is only 10%.
  • Fig. 8 is a response curve when the magnetoresistive sensing element is a TMR three-layer film structure and a GMR multilayer film structure.
  • the direction of the applied magnetic field 11 is parallel to the magnetization direction 19 of the pinning layer, and the intensity of the applied magnetic field is greater than -Bs31 or Bs32
  • the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is parallel, and the magnetic resistance of the MTJ element is the smallest, that is, R L 28 .
  • the magnetization direction 18 of the magnetic free layer is anti-parallel to the magnetization direction 19 of the pinned layer, and the magnetoresistance of the MTJ element is the largest, that is, R H 27.
  • the magnetic field between -Bs 31 and Bs 32 is the measuring range of the sensor.
  • the curves 29, 30 are linear between -Bs 31 and Bs 32, and the resistance change rate of the magnetoresistive element can be up to 200%.
  • Figure 9 is a response curve of the magnetoresistive sensing element in the AMR Barber-pole configuration. As can be seen from the figure, the resistance change rate of the magnetoresistive element is approximately 1%.
  • Fig. 10 is a conversion characteristic curve when the magnetoresistive sensing element is a single-chip reference bridge sensor of the TMR spin valve structure with or without an attenuator.
  • Curve 15 shows the absence of an attenuator
  • curve 16 shows the use of an attenuator
  • the horizontal axis is the magnitude of the applied magnetic field
  • the vertical axis is the ratio of the sensor output voltage to the supply voltage. Comparing the two curves, it can be seen that the linear range of the magnetic field corresponding to the curve 15 is about 35 oersted, and the linear range of the magnetic field corresponding to the curve 16 is about 150 oersted.
  • the sensor The linear working range is significantly wider.
  • Fig. 11 is a conversion characteristic curve when the magnetoresistive sensing element is a single-chip reference bridge sensor of the TMR three-layer film structure with or without an attenuator.
  • Curve 33 shows the absence of an attenuator
  • curve 34 shows the use of an attenuator
  • the horizontal axis is the magnitude of the applied magnetic field
  • the vertical axis is the ratio of the sensor output voltage to the supply voltage. Comparing these two curves shows that after using the attenuator, the sensor's working range is significantly wider.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

一种用于高强度磁场的单芯片参考桥式磁传感器，该传感器包括基片（1）、参考臂、感应臂、屏蔽结构（4）以及衰减器（5）。其中参考臂、感应臂各自包含有至少两行/列由一个或多个相同磁电阻传感元件电连接构成的参考元件串（3）、感应元件串（2）；参考元件串（3）与感应元件串（2）相互交错排放，每个参考元件串（3）上对应设置有一屏蔽结构（4），每个感应元件串（2）上对应设置有一衰减器（5），磁电阻传感元件为选自AMR、GMR或者TMR传感元件中的一种，屏蔽结构（4）和衰减器（5）均为由坡莫合金这种铁磁材料制成的长矩形条阵列。此传感器可在准桥、参考半桥、参考全桥这三种电桥结构上得到实现。该传感器具有以下优点：功耗低、线性度好、工作范围宽以及能在高强度磁场中工作等。

Description

一种用于高强度磁场的单芯片参考桥式磁传感器 技术领域
本发明涉及磁传感器技术领域，特别涉及一种用于高强度磁场中的单芯片参考桥式磁传感器。
背景技术
磁传感器广泛用于现代工业和电子产品中以感应磁场强度来测量电流、位置、方向等物理参数。在现有技术中，有许多不同类型的传感器用于测量磁场及其他参数，例如霍尔(Hall)元件，各向异性磁电阻(Anisotropic Magneto resistance,AMR)元件或巨磁电阻(Giant Magneto resistance,GMR)元件为敏感元件的磁传感器。霍尔磁传感器虽然能在高强度磁场中工作，但灵敏度很低、功耗大、线性度差等缺点。AMR磁感器虽然灵敏度比霍尔传感器高，但其制造工艺复杂，功耗高，并且不适用于高强度磁场。GMR磁传感器相比霍尔磁传感器有更高的灵敏度，但其线性范围偏低，并且也不适用于高强度磁场。
TMR(Tunnel Magneto Resistance)磁传感器是近年来开始工业应用的新型磁电阻效应传感器，其利用的是磁性多层膜材料的隧道磁电阻效应对磁场进行感应，其相对于霍尔磁传感器、AMR磁传感器以及GMR磁传感器具有更高的灵敏度、更低的功耗、更好的线性度以及更宽的工作范围。但现有的TMR磁传感器仍然不适用于高强度磁场中工作，并且线性范围也不够宽。
发明内容
本发明的目的在于克服现有技术中存在的以上问题，提供一种适用于高强度磁场中的单芯片参考桥式磁传感器。
为实现上述技术目的，达到上述技术效果，本发明通过以下技术方案实现：
本发明提供了一种用于高强度磁场的单芯片参考桥式磁传感器，该传感器包括:
一基片；
至少一个沉积在所述基片上的参考臂，所述参考臂包含有至少一行/列由一个或者至少两个相同的磁电阻传感元件电连接构成的参考元件串；
至少一个沉积在所述基片上的感应臂，所述感应臂包含有至少一行/列由一个或者至少两个相同的磁电阻传感元件电连接构成的感应元件串；
至少一个衰减器和至少两个屏蔽结构，所述衰减器与所述屏蔽结构相交错间隔地排列，所述衰减器和所述屏蔽结构的形状相同，所述屏蔽结构的宽度和面积分别比所述衰减器的宽度和面积大；
其中，所述参考臂与所述感应臂连接构成一电桥；
每个所述参考元件串上对应设置有一屏蔽结构，每个所述感应元件串上对应设置有一衰减器，所述参考元件串位于所述屏蔽结构的下方或上方，所述感应元件串位于所述衰减器的下方或上方；
所述参考元件串和所述感应元件串的行/列数相同，并沿纵向或横向相间隔排布；所述感应元件串处磁场的增益系数大于所述参考元件串处磁场的增益系数。
优选的，构成所述参考元件串和构成所述感应元件串的所述磁电阻传感元件为选自AMR、GMR、TMR传感元件中的一种。
优选的，所述磁电阻传感元件为GMR自旋阀结构、GMR多层膜结构、TMR自旋阀结构以及TMR三层膜结构中的一种。
优选的，所述电桥为半桥、全桥或者准桥。
优选的，所述感应臂和所述参考臂上的所述磁电阻传感元件的个数相同。
优选的，每个所述感应元件串与相邻的所述参考元件串之间均相隔间距L，当所述衰减器的个数为奇数时，正中间有两个所述参考元件串相邻且两者之间的间距为2L，当所述衰减器的个数为偶数时，正中间有两个所述感应元件串相邻且两者之间的间距为2L。
优选的，所述衰减器的个数N不少于所述感应元件串的行/列数，所述屏蔽结构的个数M不少于所述参考元件串的行/列数，并且N<M，其中N、M均为正整数。
优选的，所述基片包括了集成电路，或与包括了集成电路的其它基片相连接。优选的，所述集成电路为CMOS、BiCMOS、Bipolar、BCDMOS以及SOI中的一种，所述参考臂与所述感应臂直接沉积在所述基片的集成电路上面。
优选的，所述基片为ASIC芯片，所述ASIC芯片含有偏移电路、增益电路、校准电路、温度补偿电路和逻辑(logic)电路中的任一种或至少两种电路。
优选的，所述逻辑电路为数字开关电路或者旋转角度计算电路。
优选的，所述屏蔽结构和所述衰减器的形状均为沿横/纵向延伸的长条形阵列。 优选的，所述屏蔽结构和所述衰减器的组成材料相同，均为软铁磁合金，所述软铁磁合金包含有Ni、Fe和Co中的一种元素或至少两种元素。
优选的，所述单芯片参考桥式磁传感器的输入输出连接端电连接于半导体封装的输入输出连接端，所述半导体封装的方法包括焊盘引线键合、倒装芯片、球栅阵列封装、晶圆级封装或板上芯片封装。
优选的，所述单芯片参考桥式磁传感器的工作磁场强度为20～500高斯。
优选的，所述屏蔽结构将所述参考元件串完全覆盖。
与现有技术相比，本发明具有以下有益效果：功耗低、线性度好、工作范围宽以及适用于高强度磁场。
附图说明
为了更清楚地说明本发明实施例技术中的技术方案，下面将对实施例技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中单芯片桥式磁传感器的结构示意图。
图2为本发明的单芯片参考桥式磁传感器的结构示意图。
图3为本发明的单芯片参考桥式磁传感器的另一种结构示意图。
图4为本发明的单芯片参考桥式磁传感器在外磁场中的磁场分布图。
图5为本发明中参考元件串和感应元件串所在位置与相对应的增益系数之间的关系曲线。
图6为现有技术中参考元件串和感应元件串所在位置与相对应的增益系数之间的关系曲线。
图7为TMR和GMR自旋阀结构的磁电阻传感元件的响应曲线。
图8为TMR三层膜结构和GMR多层膜结构的磁电阻传感元件的响应曲线。
图9为AMR Barber-pole(类似于理发店门口的旋转彩柱)结构的磁电阻传感元件的响应曲线。
图10为本发明中TMR自旋阀结构的磁传感器有无衰减器的转换特性曲线。
图11为本发明中TMR三层膜结构的磁传感器有无衰减器的转换特性曲线。
具体实施方式
下面结合附图及实施例对本发明的发明内容作进一步的描述。
图1为现有技术中专利申请201310203311.3所公开的单芯片桥式磁传感器的结构示意图。该传感器包括基片1、感应元件串2、参考元件串3、屏蔽结构4、电连接导体6以及四个用于输入输出连接的焊盘7-10，分别作为电源供应端Vbias，接地端GND，电压输出端V+，V-。其中感应元件串2与参考元件串3相互交错排放，感应元件串2位于两个屏蔽结构4的间隙处，参考元件串3位于屏蔽结构4的下方。感应臂、参考臂和焊盘7-10之间均用电连接导体6连接。该传感器具有高灵敏度、线性度好、偏移量小等优点，但其容易饱和，其可适用的最大磁场强度为100高斯左右，不能用于更高强度的磁场当中。
实施例
图2为本发明中单芯片参考桥式磁传感器的结构示意图。其与图1中所示的传感器的不同之处在于：该传感器还包括衰减器5，衰减器5与屏蔽结构4相隔排列，并且衰减器5的个数N不少于感应元件串2的行/列数，屏蔽结构4的个数M不少于参考元件串3的行/列数，并且N<M，N和M均为正整数，图2中N为5，M为6。衰减器5与屏蔽结构4的形状相同，优选地为沿横/纵向延伸的长条形阵列，它们的组成材料也相同，均为选自Ni、Fe和Co一种元素或几种元素组成的软铁磁合金，也可以为非铁磁材料，但不限于以上材料。感应元件串2和参考元件串3各自均由至少一行/列由一个或者至少两个相同的磁电阻传感元件电连接构成，优选地，磁电阻传感元件为AMR、GMR或者TMR传感元件，并且感应元件串2和参考元件串3所包含的磁电阻传感元件的个数相同，其钉扎层的磁化方向也相同。感应元件串2与参考元件串3相互交错排放，每个感应元件串2与相邻的参考元件串3之间均相隔间距L，但对于如图2所示的奇数个衰减器5，正中间有两个参考元件串3相邻，其之间间距为2L，对于如图3所示的偶数个衰减器5，正中间有两个感应元件串2相邻，其之间间距为2L。间距L很小，优选地为20～100微米。每个感应元件串2上对应设置有一衰减器5，每个参考元件串3上对应设置有一屏蔽结构4，感应元件串2和参考元件串3可分别放置于衰减器5和屏蔽结构4的上方或者下方，图2中所示为放置于下方的情形。屏蔽结构4的宽度和面积要比衰减器5的宽度和面积大，其足够大到能将参考元 件串3完全覆盖，致使在参考元件串3处的磁场能很大程度的衰减甚至完全屏蔽，而感应元件串2所能感测到的磁场在衰减器5的作用下会有所衰减，但衰减幅度并不是很大，从而导致感应元件串2处磁场的增益系数Asns大于参考元件串3处磁场的增益系数Aref。感应元件串2相互连接构成的感应臂和参考元件串3相互连接构成的参考臂电连接形成一电桥，该电桥的输入输出连接端分别为电源供应端Vbias 7，接地端GND 8，电压输出端V+9，V-10。该传感器上各元件之间通过电连接导体6连接。
在基片1上也还可以印制有集成电路，或与另一印制有集成电路的基片相连接，优选地，所印制的集成电路可以为CMOS、BiCMOS(双极互补金属氧化半导体bipolar complementary metal oxide semiconductor)、Bipolar、BCDMOS(双极互补MOS-双扩散MOS结构，bipolar-CMOS-DMOS structure)或者SOI(Silicon-On-Insulator，绝缘衬底上的硅)，参考臂与感应臂便直接沉积在基片1的集成电路上面。此外，基片1还可以为专用集成电路ASIC芯片，其含有偏移电路、增益电路、校准电路、温度补偿电路和逻辑电路中的任一种或几种应用电路，其中逻辑电路还可以为数字开关电路或者旋转角度计算电路，但并不限于以上电路。
本实施例中是采用焊盘来进行输入输出连接，也可以采用倒装芯片、球栅阵列封装、晶圆级封装以及板上芯片封装等半导体封装方法。该传感器可适用于20～500高斯的磁场中。
图4为感应元件串2与参考元件串3在外加磁场中的磁场分布图。图中，外加磁场的方向为11。构成感应元件串2和参考元件串3的磁电阻传感元件为TMR传感元件。从图中可以看出，在参考元件串3处的磁场在屏蔽结构的作用下大大衰减，而在感应元件串2处的磁场的衰减幅度相比前者要小。图5为与图4所对应的感应元件串2和参考元件串3的所在位置与相应的位置处的增益系数之间的关系曲线。图中横轴表示的位置是以比例距离的形式体现的。从图5中可以看出，在感应元件串2处的磁场幅度的增益系数Asns与参考元件串3处的磁场幅度的增益系数Aref均在0～1之间，其中增益系数Asns大于Aref，也就是说在参考元件串3处的磁场的衰减幅度要比在感应元件串2处的磁场衰减幅度大，这与从图4中所得到的结论一致。
图6为图1中所对应的传感器结构的感应元件串2和参考元件串3的所在位置与相应的位置处的增益系数之间的关系曲线。为便于比较，参考元件串3和感应元件串2的所取个数与图5中相同。对比图5和图6中的两曲线12和13可以发现，本发明中的感应元件串2处的磁场幅度大幅度衰减，这样就即使把本发明中的单芯片参考桥式磁传感器放置于高强度的磁场中，该传感器所感测到的磁场大小是衰减后的磁场，只要在其饱和范围之内，此传感器仍然可以正常工作。
图7为磁电阻传感元件为TMR和GMR自旋阀结构时的响应曲线。当外加磁场11的方向与钉扎层的磁化方向19平行，同时外加磁场的强度大于-Bs+Bo 25时，磁性自由层的磁化方向18与外加磁场11的方向平行，进而与钉扎层的磁化方向19平行，此时TMR元件的磁阻最小，即为RL 21。当外加磁场11的方向与钉扎层的磁化方向19反平行，同时外加磁场的强度大于Bs+Bo 26时，磁性自由层的磁化方向18与外加磁场11的方向平行，进而与钉扎层的磁化方向19反平行，此时TMR元件的磁阻最大，即为RH22。当外加磁场11的强度为Bo 23时，磁性自由层的磁化方向18与钉扎层的磁化方向19垂直，此时，TMR元件的磁阻为RL 21和RH22的中间值，即(RL+RH)/2。-Bs+Bo 25与Bs+Bo 26之间的磁场便是单芯片线性桥式磁场传感器的测量范围。从图中可以看出，曲线20在-Bs+Bo 25与Bs+Bo 26之间呈线性，
电阻变化率为
Figure PCTCN2014094838-appb-000001
对于TMR自旋阀，其电阻变化率最高可达到200％，对于GMR自旋阀，其电阻变化率最高只有10％。
图8为磁电阻传感元件为TMR三层膜结构和GMR多层膜结构时的响应曲线。当外加磁场11的方向与钉扎层的磁化方向19平行，同时外加磁场的强度大于-Bs31或者Bs 32时，磁性自由层的磁化方向18与外加磁场11的方向平行，进而与钉扎层的磁化方向19平行，此时MTJ元件的磁阻最小，即为RL 28。当外加磁场为0，磁性自由层的磁化方向18与钉扎层的磁化方向19反平行，此时MTJ元件的磁阻最大，即为RH27。-Bs 31与Bs 32之间的磁场便是传感器的测量范围。从图中可以看出，曲线29、30在-Bs 31与Bs 32之间呈线性，磁电阻元件的电阻变化率最高也能达到200％。
图9为磁电阻传感元件为AMR Barber-pole结构时的响应曲线。从图中可以看出，该种磁电阻元件的电阻变化率将近在1％左右。
图10为磁电阻传感元件为TMR自旋阀结构的单芯片参考桥式传感器有无衰减器时的转换特性曲线。曲线15表示的是没有衰减器的情形，曲线16表示的是使用了衰减器的情形，横轴为外加磁场的大小，纵轴为传感器输出电压与电源电压之间的比值。对比两曲线可看出，曲线15所对应的磁场线性范围在35奥斯特左右，而曲线16所对应的磁场线性范围则在150奥斯特左右，由此可见，使用了衰减器之后，传感器的线性工作范围明显变宽。
图11为磁电阻传感元件为TMR三层膜结构的单芯片参考桥式传感器有无衰减器时的转换特性曲线。曲线33表示的是没有衰减器的情形，曲线34表示的是使用了衰减器的情形，横轴为外加磁场的大小，纵轴为传感器输出电压与电源电压之间的比值。对比这两曲线可看出，使用了衰减器之后，传感器工作范围明显变宽。
以上讨论的是电桥为全桥的情形，由于半桥和准桥的工作原理与全桥相同，在此就不再赘述，上述所得到的结论也同样适用于半桥和准桥结构的单芯片参考桥式磁传感器。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (16)

  1. 一种用于高强度磁场的单芯片参考桥式磁传感器，其特征在于，该传感器包括:
    一基片；
    至少一个沉积在所述基片上的参考臂，所述参考臂包含有至少一行/列由一个或者至少两个相同的磁电阻传感元件电连接构成的参考元件串；
    至少一个沉积在所述基片上的感应臂，所述感应臂包含有至少一行/列由一个或者至少两个相同的磁电阻传感元件电连接构成的感应元件串；
    至少一个衰减器和至少两个屏蔽结构，所述衰减器与所述屏蔽结构相交错间隔地排列，所述衰减器和所述屏蔽结构的形状相同，所述屏蔽结构的宽度和面积分别比所述衰减器的宽度和面积大；
    其中，
    所述参考臂与所述感应臂连接构成一电桥；
    每个所述参考元件串上对应设置有一屏蔽结构，每个所述感应元件串上对应设置有一衰减器，所述参考元件串位于所述屏蔽结构的下方或上方，所述感应元件串位于所述衰减器的下方或上方；
    所述参考元件串和所述感应元件串的行/列数相同，并沿纵向或横向相交错间隔地排布；
    所述感应元件串处磁场的增益系数大于所述参考元件串处磁场的增益系数。
  2. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，构成所述参考元件串和构成所述感应元件串的所述磁电阻传感元件为选自AMR、GMR、TMR传感元件中的一种。
  3. 根据权利要求2所述的单芯片参考桥式磁传感器，其特征在于，所述磁电阻传感元件为GMR自旋阀结构、GMR多层膜结构、TMR自旋阀结构和TMR三层膜结构中的一种。
  4. 根据权利要求1-3中任一项所述的单芯片参考桥式磁传感器，其特征在于，所述电桥为半桥、全桥或者准桥。
  5. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述感应臂和所述参考臂上的所述磁电阻传感元件的个数相同。
  6. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，每个所述感应元件串与相邻的所述参考元件串之间均相隔间距L，当所述衰减器的个数为奇数时，正中间有两个所述参考元件串相邻且两者之间的间距为2L，当所述衰减器的个数为偶数时，正中间有两个所述感应元件串相邻且两者之间的间距为2L。
  7. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述衰减器的个数N不少于所述感应元件串的行/列数，所述屏蔽结构的个数M不少于所述参考元件串的行/列数，并且N<M，其中N、M均为正整数。
  8. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述基片包括了集成电路，或与包括了集成电路的其它基片相连接。
  9. 根据权利要求8所述的单芯片参考桥式磁传感器，其特征在于，所述集成电路为CMOS、BiCMOS、Bipolar、BCDMOS和SOI中的一种，所述参考臂与所述感应臂直接沉积在所述基片的集成电路上面。
  10. 根据权利要求8所述的单芯片参考桥式磁传感器，其特征在于，所述基片为ASIC芯片，所述ASIC芯片含有偏移电路、增益电路、校准电路、温度补偿电路和逻辑电路中的任一种或至少两种电路。
  11. 根据权利要求10所述的单芯片参考桥式磁传感器，其特征在于，所述逻辑电路为数字开关电路或者旋转角度计算电路。
  12. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述屏蔽结构和所述衰减器的形状均为沿横/纵向延伸的长条形阵列。
  13. 根据权利要求1或12所述的单芯片参考桥式磁传感器，其特征在于，所述屏蔽结构和所述衰减器的组成材料相同，均为软铁磁合金，所述软铁磁合金包含有Ni、Fe和Co中的一种元素或至少两种元素。
  14. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述单芯片参考桥式磁传感器的输入输出连接端电连接于半导体封装的输入输出连接端，所述半导体封装的方法包括焊盘引线键合、倒装芯片、球栅阵列封装、晶圆级封装或板上芯片封装。
  15. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述单芯片参考桥式磁传感器的工作磁场强度为20～500高斯。
  16. 根据权利要求1所述的单芯片参考桥式磁传感器，其特征在于，所述屏蔽结 构将所述参考元件串完全覆盖。
PCT/CN2014/094838 2013-12-24 2014-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器 WO2015096744A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/108,162 US10024930B2 (en) 2013-12-24 2014-12-24 Single chip referenced bridge magnetic sensor for high-intensity magnetic field
EP14874846.0A EP3088908B1 (en) 2013-12-24 2014-12-24 Single chip reference bridge type magnetic sensor for high-intensity magnetic field
JP2016542947A JP6509231B2 (ja) 2013-12-24 2014-12-24 強磁場用のシングルチップ基準ブリッジ磁気センサ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310719255.9A CN103645449B (zh) 2013-12-24 2013-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器
CN201310719255.9 2013-12-24

Publications (1)

Publication Number Publication Date
WO2015096744A1 true WO2015096744A1 (zh) 2015-07-02

Family

ID=50250699

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/094838 WO2015096744A1 (zh) 2013-12-24 2014-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器

Country Status (5)

Country Link
US (1) US10024930B2 (zh)
EP (1) EP3088908B1 (zh)
JP (1) JP6509231B2 (zh)
CN (1) CN103645449B (zh)
WO (1) WO2015096744A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10024930B2 (en) 2013-12-24 2018-07-17 MultiDimension Technology Co., Ltd. Single chip referenced bridge magnetic sensor for high-intensity magnetic field

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103954920B (zh) * 2014-04-17 2016-09-14 江苏多维科技有限公司 一种单芯片三轴线性磁传感器及其制备方法
CN104301851B (zh) 2014-07-14 2018-01-26 江苏多维科技有限公司 Tmr近场磁通信系统
CN104280700B (zh) * 2014-09-28 2017-09-08 江苏多维科技有限公司 一种单芯片差分自由层推挽式磁场传感器电桥及制备方法
CN104698409B (zh) * 2015-02-04 2017-11-10 江苏多维科技有限公司 一种单芯片具有校准线圈/重置线圈的高强度磁场x轴线性磁电阻传感器
CN104776794B (zh) * 2015-04-16 2017-11-10 江苏多维科技有限公司 一种单封装的高强度磁场磁电阻角度传感器
CN105259518A (zh) * 2015-11-03 2016-01-20 江苏多维科技有限公司 一种高灵敏度单芯片推挽式tmr磁场传感器
CN108072850B (zh) 2016-11-09 2020-06-12 爱盛科技股份有限公司 磁场感测装置
CN107037382B (zh) * 2017-04-05 2023-05-30 江苏多维科技有限公司 一种预调制磁电阻传感器
JP6996478B2 (ja) 2018-11-16 2022-02-04 Tdk株式会社 磁気センサ及び位置検出装置
JP7006670B2 (ja) 2019-10-24 2022-01-24 Tdk株式会社 磁気センサ
US12078695B2 (en) 2021-04-12 2024-09-03 Analog Devices International Unlimited Company Magnetic field sensor with overcurrent detection
CN115236568B (zh) * 2022-09-23 2023-01-20 南方电网数字电网研究院有限公司 基于磁通调节器的宽量程垂直敏感磁传感器及其制备方法
CN115963437B (zh) * 2022-12-21 2023-10-20 南方电网数字电网研究院有限公司 多量程磁传感器、磁场测量方法及导体制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217010A (en) * 1991-05-28 1993-06-08 The Johns Hopkins University Ecg amplifier and cardiac pacemaker for use during magnetic resonance imaging
CN101587174A (zh) * 2008-05-14 2009-11-25 新科实业有限公司 磁传感器
CN102323554A (zh) * 2011-05-17 2012-01-18 杭州电子科技大学 集成线圈偏置的巨磁电阻磁敏传感器
JP2013053903A (ja) * 2011-09-02 2013-03-21 Alps Green Devices Co Ltd 電流センサ
CN103267955A (zh) * 2013-05-28 2013-08-28 江苏多维科技有限公司 单芯片桥式磁场传感器
CN203337808U (zh) * 2013-05-28 2013-12-11 江苏多维科技有限公司 单芯片桥式磁场传感器
CN103592608A (zh) * 2013-10-21 2014-02-19 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN103645449A (zh) * 2013-12-24 2014-03-19 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
CN203587786U (zh) * 2013-10-21 2014-05-07 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN203658561U (zh) * 2013-12-24 2014-06-18 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887944A (en) * 1973-06-29 1975-06-03 Ibm Method for eliminating part of magnetic crosstalk in magnetoresistive sensors
JP2663460B2 (ja) * 1987-10-09 1997-10-15 株式会社デンソー 磁気方位センサ
US6185078B1 (en) * 1998-08-21 2001-02-06 International Business Machines Corporation Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap
US6771472B1 (en) * 2001-12-07 2004-08-03 Seagate Technology Llc Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
JP4977378B2 (ja) * 2006-02-23 2012-07-18 山梨日本電気株式会社 磁気センサ、回転検出装置及び位置検出装置
JP4805344B2 (ja) * 2006-04-13 2011-11-02 旭化成エレクトロニクス株式会社 磁気センサ及びその製造方法
US7639005B2 (en) * 2007-06-15 2009-12-29 Advanced Microsensors, Inc. Giant magnetoresistive resistor and sensor apparatus and method
US7795862B2 (en) * 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
EP2442118B1 (en) * 2009-06-12 2021-11-10 Alps Alpine Co., Ltd. Magnetic balance current sensor
CN102298125B (zh) * 2011-03-03 2013-01-23 江苏多维科技有限公司 推挽桥式磁电阻传感器
JP5597305B2 (ja) * 2011-03-07 2014-10-01 アルプス電気株式会社 電流センサ
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
CN102565727B (zh) * 2012-02-20 2016-01-20 江苏多维科技有限公司 用于测量磁场的磁电阻传感器
JP2013210335A (ja) * 2012-03-30 2013-10-10 Alps Electric Co Ltd 磁気センサ
CN103630855B (zh) * 2013-12-24 2016-04-13 江苏多维科技有限公司 一种高灵敏度推挽桥式磁传感器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217010A (en) * 1991-05-28 1993-06-08 The Johns Hopkins University Ecg amplifier and cardiac pacemaker for use during magnetic resonance imaging
CN101587174A (zh) * 2008-05-14 2009-11-25 新科实业有限公司 磁传感器
CN102323554A (zh) * 2011-05-17 2012-01-18 杭州电子科技大学 集成线圈偏置的巨磁电阻磁敏传感器
JP2013053903A (ja) * 2011-09-02 2013-03-21 Alps Green Devices Co Ltd 電流センサ
CN103267955A (zh) * 2013-05-28 2013-08-28 江苏多维科技有限公司 单芯片桥式磁场传感器
CN203337808U (zh) * 2013-05-28 2013-12-11 江苏多维科技有限公司 单芯片桥式磁场传感器
CN103592608A (zh) * 2013-10-21 2014-02-19 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN203587786U (zh) * 2013-10-21 2014-05-07 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN103645449A (zh) * 2013-12-24 2014-03-19 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
CN203658561U (zh) * 2013-12-24 2014-06-18 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3088908A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10024930B2 (en) 2013-12-24 2018-07-17 MultiDimension Technology Co., Ltd. Single chip referenced bridge magnetic sensor for high-intensity magnetic field

Also Published As

Publication number Publication date
CN103645449A (zh) 2014-03-19
JP6509231B2 (ja) 2019-05-08
EP3088908B1 (en) 2021-10-20
EP3088908A1 (en) 2016-11-02
US20160327616A1 (en) 2016-11-10
US10024930B2 (en) 2018-07-17
EP3088908A4 (en) 2017-09-20
CN103645449B (zh) 2015-11-25
JP2017502298A (ja) 2017-01-19

Similar Documents

Publication Publication Date Title
WO2015096744A1 (zh) 一种用于高强度磁场的单芯片参考桥式磁传感器
US9857434B2 (en) Push-pull bridge-type magnetic sensor for high-intensity magnetic fields
US9885764B2 (en) High-sensitivity push-pull bridge magnetic sensor
JP2017502298A5 (zh)
JP6525335B2 (ja) シングルチップ・ブリッジ型磁場センサ
JP6076346B2 (ja) Ｍｔｊ三軸磁場センサおよびそのパッケージ方法
JP6420665B2 (ja) 磁場を測定する磁気抵抗センサ
JP6193212B2 (ja) シングルチップ２軸ブリッジ型磁界センサ
EP2827165B1 (en) Magnetoresistance magnetic field gradient sensor
CN202421483U (zh) 单一芯片推挽桥式磁场传感器
JP2014512003A (ja) シングルチッププッシュプルブリッジ型磁界センサ
CN203658561U (zh) 一种用于高强度磁场的单芯片参考桥式磁传感器
WO2017173992A1 (zh) 一种无需置位/复位装置的各向异性磁电阻amr传感器
WO2018006879A1 (zh) 一种无需置位和复位装置的各向异性磁电阻电流传感器
CN203587786U (zh) 一种用于高强度磁场的推挽桥式磁传感器
US20180321334A1 (en) Tmr high-sensitivity single-chip push-pull bridge magnetic filed sensor
CN205720614U (zh) 一种磁电阻结交替排列的磁电阻传感器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14874846

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2016542947

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 15108162

Country of ref document: US

REEP Request for entry into the european phase

Ref document number: 2014874846

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2014874846

Country of ref document: EP